WorldWideScience

Sample records for active cmos microarray

  1. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  2. CMOS Monolithic Active Pixel Sensors (MAPS): developments and future outlook

    R. Turchetta; A. Fant; P. Gasiorek; C. Esbrand; J.A. Griffiths; M.G. Metaxas; G.J. Royle; R. Speller; C. Venanzi; P.F. van der Stelt; H.G.C. Verheij; G. Li; S. Theodoridis; H. Georgiou; D. Cavouras; G. Hall; M. Noy; J. Jones; J. Leaver; D. Machin; S. Greenwood; M. Khaleeq; H. Schulerud; J.M. Østby; F. Triantis; A. Asimidis; D. Bolanakis; N. Manthos; R. Longo; A. Bergamaschi

    2007-01-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end app

  3. CMOS Monolithic Active Pixel Sensors (MAPS): developments and future outlook

    R. Turchetta; A. Fant; P. Gasiorek; C. Esbrand; J.A. Griffiths; M.G. Metaxas; G.J. Royle; R. Speller; C. Venanzi; P.F. van der Stelt; H.G.C. Verheij; G. Li; S. Theodoridis; H. Georgiou; D. Cavouras; G. Hall; M. Noy; J. Jones; J. Leaver; D. Machin; S. Greenwood; M. Khaleeq; H. Schulerud; J.M. Østby; F. Triantis; A. Asimidis; D. Bolanakis; N. Manthos; R. Longo; A. Bergamaschi

    2006-01-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end app

  4. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors

  5. CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

    Turchetta, R

    2006-01-01

    This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good performance in terms of spatial resolution, efficiency, radiation hardness have been demonstrated and work is now well under way to deliver the first MAPS-based vertex detectors.

  6. A Single-Transistor Active Pixel CMOS Image Sensor Architecture

    A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

  7. CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

    Turchetta, R. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom)], E-mail: r.turchetta@rl.ac.uk; Fant, A.; Gasiorek, P. [Rutherford Appleton Laboratory, Chilton, Didcot, Oxon OX11 0QX (United Kingdom); Esbrand, C.; Griffiths, J.A.; Metaxas, M.G.; Royle, G.J.; Speller, R.; Venanzi, C. [Department of Medical Physics and Bioengineering, University College London (United Kingdom); Stelt, P.F. van der; Verheij, H.; Li, G. [Academic Centre for Dentistry, Vrije Universiteit and University of Amsterdam (Netherlands); Theodoridis, S.; Georgiou, H. [Department of Informatics and Telecommunications, University of Athens (Greece); Cavouras, D. [Medical Image and Signal Processing Laboratory, Department of Medical Instrument Technology, Technological Education Institution of Athens (Greece); Hall, G.; Noy, M.; Jones, J.; Leaver, J.; Machin, D. [High Energy Physics Group, Department of Physics, Imperial College, London (United Kingdom)] (and others)

    2007-12-01

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS)

  8. CMOS Monolithic Active Pixel Sensors (MAPS): Developments and future outlook

    Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements. This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS)

  9. New Active Digital Pixel Circuit for CMOS Image Sensor

    2001-01-01

    A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.

  10. E-Beam Effects on CMOS Active Pixel Sensors

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  11. Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

    Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

    2003-01-01

    Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

  12. CMOS VLSI Active-Pixel Sensor for Tracking

    Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

    2004-01-01

    An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

  13. A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

    Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

    1993-01-01

    A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

  14. CMOS Monolithic Active Pixel Sensors (MAPS): New 'eyes' for science

    Re-invented in the early 1990s on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology have slowly invaded the world of consumer imaging and are now on the edge of becoming the first technology in this field, previously dominated by Charge-Coupled Devices (CCD). Thanks to the advantages brought by the use of standard CMOS technology, MAPS have great potential in many areas including function integration, leading to the concept of a camera-on-a-chip, pixel size, random access to selected region-of-interest, low power, higher speed and radiation resistance. In many ways, MAPS have introduced a new way of doing imaging. Despite their success in the consumer arena, MAPS are still to make a definitive impact in the world of scientific imaging. This paper first briefly reviews the way radiation is detected by a CMOS sensor, before analysing the main noise source and its relationship with the full well capacity and the dynamic range. This paper will also show first examples of scientific results, obtained in the detection of low-energy electrons

  15. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    Esposito, M; Anaxagoras, T; Konstantinidis, AC; Zheng, Y.; Speller, RD; Evans, PM; Allinson, NM; Wells, K.

    2014-01-01

    Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non...

  16. A charge pump for driving CMOS active pixel reset

    XU Jiang-tao; LI Bin-qiao; YAO Su-ying; SUN Zhong-yan

    2009-01-01

    To overcome the limitation of low image signal swing range and long reset time in four transistor CMOS active pixel image sensor, a charge pump circuit is presented to improve the pixel reset performance. The charge pump circuit consists of two stage switch capacitor serial voltage doubler. Cross-coupled MOSFET switch structure with well close and open perfor-mance is used in the second stage of the charge pump. The pixel reset transistor with gate voltage driven by output of the pump works in linear region, which can accelerate reset process and complete reset is achieved. The simulation results show that output of the charge pump is enhanced from 1.2 to 4.2 V with voltage tipple lower than 6 inV. The pixel reset time is reduced to 1.14 ns in dark. Image smear due to non-completely reset is eliminated and the image signal swing range is enlarged. The charge pump is successfully embedded in a CMOS image sensor chip with 0.3 ~ 106 pixeis.

  17. Microarray of programmable electrochemically active elements

    S. McCaskill, John; Maeke, Thomas; Straczek, Lukas; Oehm, Jürgen; Funke, Dominic; Mayr, Pierre; Sharma, Abhishek; Müller, Asbjørn; Tangen, Uwe; H. Packard, Norman; Rasmussen, Steen

    This paper describes possible applications of a two dimensional array of programmable electrochemically active elements to Alife. The array has been developed as part of the MICREA-gents project, and after several design phases, is now a mature enough device for general use beyond the project. He...

  18. Monte Carlo Study of the Dosimetry of Small-Photon Beams Using CMOS Active Pixel Sensors

    Jimenez Spang, F.

    2014-01-01

    Stereotactic radiosurgery is an increasingly common treatment modality that uses very small photon fields. This technique imposes high dosimetric standards and complexities that remain unsolved. In this work the dosimetric performance of CMOS active pixel sensors is presented for the measurement of small-photons beams. A novel CMOS active pixel sensor called Vanilla developed for scientific applications was used. The detector is an array of 520 × 520 pixels on a 25 μm pitch which allows up to...

  19. Phenotype microarray profiling of the antibacterial activity of red cabbage

    Hafidh RR

    2012-06-01

    Full Text Available Background: Functional food can be a potent source of wide array of biocomonents with antimicrobial activity. We investigated the antibacterial activity of red cabbage (RC extract on Gram negative and positive ATCC strains. Most intersting, we, for the first time, explored and analysed the complete phenotypic profile of RC-treated bacteria using Omnilog Phenotype Microarray. Results: This study revealed that the phenotype microarray (PM screen was a valuable tool in the search for compounds and their antibacterial mechanisms that can inhibit bacterial growth by affecting certain metabolic pathways. It was shown that RC exerted remarkable antibacterial effect on S. aureus and E. coli bacteria, and PM showed a wide range phenotypic profile of the exerted RC antibacterial activity. RC targeted the peptide, carbon, nutriontional assembly, and sulfur metbolic pathways altogether. The peptidoglycan synthesis pathway was inferred to be targeted by RC extract at a metabolic point different from other available cell wall-targeting drugs; these could be hot targets for the discovery of new therapy for many problematic microbes.Conclusions: Taken together, the phenotype microarray for functional food and medicinal plants can be a very useful tool for profiling their antimicrobial activity. Moreover, extracts of functional food can exert antibacterial activity by hitting a wide range of metabolic pathways, at the same time leading to very difficult condition for bacteria to rapidly develop resistance. Therefore, using functional foods or medicinal plants as such, or as extracts, can be superior on mono-targeting antibiotics if the optimal concentrations and conditions of these functional foods were sought.

  20. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    Konstantinidis, A. C.; Szafraniec, M. B.; Speller, R.D.; Olivo, A.

    2012-01-01

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacit...

  1. Development of radiation hard CMOS active pixel sensors for HL-LHC

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  2. Electronic dosimetry and neutron metrology by CMOS active pixel sensor

    This work aims at demonstrating the possibility to use active pixel sensors as operational neutron dosemeters. To do so, the sensor that has been used has to be γ-transparent and to be able to detect neutrons on a wide energy range with a high detection efficiency. The response of the device, made of the CMOS sensor MIMOSA-5 and a converter in front of the sensor (polyethylene for fast neutron detection and 10B for thermal neutron detection), has been compared with Monte Carlo simulations carried out with MCNPX and GEANT4. These codes have been before-hand validated to check they can be used properly for our application. Experiments to characterize the sensor have been performed at IPHC and at IRSN/LMDN (Cadarache). The results of the sensor irradiation to photon sources and mixed field (241AmBe source) show the γ-transparency of the sensor by applying an appropriate threshold on the deposited energy (around 100 keV). The associated detection efficiency is satisfactory with a value of 10-3, in good agreement with MCNPX and GEANT4. Other features of the device have been tested with the same source, like the angular response. The last part of this work deals with the detection of thermal neutrons (eV-neutrons). Assays have been done in Cadarache (IRSN) with a 252Cf source moderated with heavy water (with and without cadmium shell). Results asserted a very high detection efficiency (up to 6*10-3 for a pure 10B converter) in good agreement with GEANT4. (author)

  3. Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

    Fossum, E. R.

    1995-01-01

    A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

  4. Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels

    Deveaux, M; Besson, A; Claus, G; Colledani, C; Dorokhov, M; Dritsa, C; Dulinski, W; Fröhlich, I; Goffe, M; Grandjean, D; Heini, S; Himmi, A; Hu, C; Jaaskelainen, K; Müntz, C; Shabetai, A; Stroth, J; Szelezniak, M; Valin, I; Winter, M

    2009-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad

  5. Passive radiation detection using optically active CMOS sensors

    Dosiek, Luke; Schalk, Patrick D.

    2013-05-01

    Recently, there have been a number of small-scale and hobbyist successes in employing commodity CMOS-based camera sensors for radiation detection. For example, several smartphone applications initially developed for use in areas near the Fukushima nuclear disaster are capable of detecting radiation using a cell phone camera, provided opaque tape is placed over the lens. In all current useful implementations, it is required that the sensor not be exposed to visible light. We seek to build a system that does not have this restriction. While building such a system would require sophisticated signal processing, it would nevertheless provide great benefits. In addition to fulfilling their primary function of image capture, cameras would also be able to detect unknown radiation sources even when the danger is considered to be low or non-existent. By experimentally profiling the image artifacts generated by gamma ray and β particle impacts, algorithms are developed to identify the unique features of radiation exposure, while discarding optical interaction and thermal noise effects. Preliminary results focus on achieving this goal in a laboratory setting, without regard to integration time or computational complexity. However, future work will seek to address these additional issues.

  6. CMOS active pixel sensor for fault tolerance and background illumination subtraction

    Cheung, Yu Hin (Desmond)

    2005-01-01

    As the CMOS active pixel sensor evolves, its weaknesses are being overcome and its strengths start to surpass that of the charge-coupled device. This thesis discusses two novel APS designs. The first novel APS design was a Fault Tolerance Active Pixel Sensor (FTAPS) to increase a pixel's tolerance to defects. By dividing a regular APS pixel into two halves, the reliability of the pixel is increased, resulting in higher fabrication yield, longer pixel life time, and reduction in cost. Photodio...

  7. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    Kim, Young Soo; Cho, Gyuseong; Bae, Jun-Hyung

    2006-09-01

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μm×100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type.

  8. Analysis of noise characteristics for the active pixels in CMOS image sensors for X-ray imaging

    CMOS image sensors have poorer performance compared to conventional charge coupled devices (CCDs). Since CMOS Active Pixel Sensors (APSs) in general have higher temporal noise, higher dark current, smaller full well charge capacitance, and lower spectral response, they cannot provide the same wide dynamic range and superior signal to noise ratio as CCDs. In view of electronic noise, the main source for the CMOS APS is the pixel, along with other signal processing blocks such as row and column decoder, analog signal processor (ASP), analog-to-digital converter (ADC), and timing and control logic circuitry. Therefore, it is important and necessary to characterize noise of the active pixels in CMOS APSs, and we performed experimental measurements and comparisons with theoretical estimations. To derive noise source of the pixels, we designed and fabricated four types of CMOS active pixels, and each pixel is composed of a photodiode and three MOS transistors. The size of these pixels is 100 μmx100 μm. The test chip was fabricated using ETRI 0.8 μm (2P/2M) standard CMOS process. It was found that the dominant noise in CMOS active pixels is shot noise during integration under normal operating conditions. And, it was also seen that epitaxial type pixels have similar noise level compared to non-epitaxial type, and the noise of diffusion type pixel is larger than for a well type pixel on the same substrate type

  9. Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

    Rymaszewski, Piotr; Barbero, Marlon; Breugnon, Patrick; Godiot, Stépahnie; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Hügging, Fabian; Krüger, Hans; Liu, Jian; Pangaud, Patrick; Peric, Ivan; Rozanov, Alexandre; Wang, Anqing; Wermes, Norbert

    2016-01-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture ...

  10. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  11. Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging.

    Esposito, M; Anaxagoras, T; Konstantinidis, A C; Zheng, Y; Speller, R D; Evans, P M; Allinson, N M; Wells, K

    2014-07-01

    Recently CMOS active pixels sensors (APSs) have become a valuable alternative to amorphous silicon and selenium flat panel imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However, despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ⩽1.9%. The uniformity of the image quality performance has been further investigated in a typical x-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practice. Finally, in order to compare the detection capability of this novel APS with the technology currently used (i.e. FPIs), theoretical evaluation of the detection quantum efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this

  12. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs

  13. CMOS Active Pixel Sensors as energy-range detectors for proton Computed Tomography

    Esposito, M.; Anaxagoras, T.; Evans, P. M.; Green, S.; Manolopoulos, S.; Nieto-Camero, J.; Parker, D. J.; Poludniowski, G.; Price, T.; Waltham, C.; Allinson, N. M.

    2015-06-01

    Since the first proof of concept in the early 70s, a number of technologies has been proposed to perform proton CT (pCT), as a means of mapping tissue stopping power for accurate treatment planning in proton therapy. Previous prototypes of energy-range detectors for pCT have been mainly based on the use of scintillator-based calorimeters, to measure proton residual energy after passing through the patient. However, such an approach is limited by the need for only a single proton passing through the energy-range detector in a read-out cycle. A novel approach to this problem could be the use of pixelated detectors, where the independent read-out of each pixel allows to measure simultaneously the residual energy of a number of protons in the same read-out cycle, facilitating a faster and more efficient pCT scan. This paper investigates the suitability of CMOS Active Pixel Sensors (APSs) to track individual protons as they go through a number of CMOS layers, forming an energy-range telescope. Measurements performed at the iThemba Laboratories will be presented and analysed in terms of correlation, to confirm capability of proton tracking for CMOS APSs.

  14. CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

    Yadid-Pecht, Orly; Pain, Bedabrata; Staller, Craig; Clark, Christopher; Fossum, Eric

    1996-01-01

    The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

  15. Charged Particle Detection using a CMOS Active Pixel Sensor

    Matis, H. S.; Bieser, F.; Kleinfelder, S.; Rai, G.; Retiere, F.; H.G. Ritter; Singh, K.; Wurzel, S. E.; Wieman, H.; Yamamoto, E.

    2002-01-01

    Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe55 exposure are reported. The sensors have also been ir...

  16. Application-specific architectures of CMOS monolithic active pixel sensors

    Szelezniak, Michal; Besson, Auguste; Claus, Gilles; Colledani, Claude; Degerli, Yavuz; Deptuch, Grzegorz; Deveaux, Michael; Dorokhov, Andrei; Dulinski, Wojciech; Fourches, Nicolas; Goffe, Mathieu; Grandjean, Damien; Guilloux, Fabrice; Heini, Sebastien; Himmi, Abdelkader; Hu, Christine; Jaaskelainen, Kimmo; Li, Yan; Lutz, Pierre; Orsini, Fabienne; Pellicioli, Michel; Shabetai, Alexandre; Valin, Isabelle; Winter, Marc

    2006-11-01

    Several development directions intended to adapt and optimize monolithic active pixel sensors for specific applications are presented in this work. The first example, compatible with the STAR microvertex upgrade, is based on a simple two-transistor pixel circuitry. It is suited for a long integration time, room-temperature operation and minimum power dissipation. In another approach for this application, a specific readout method is proposed, allowing optimization of the integration time independently of the full frame-readout time. The circuit consists of an in-pixel front-end voltage amplifier, with a gain on the order of five, followed by two analog memory cells. The extended version of this scheme, based on the implementation of more memory cells per pixel, is the solution considered for the outer layers of a microvertex detector at the international linear collider. For the two innermost layers, a circuit allowing fast frame scans together with on-line, on-chip data sparsification is proposed. The first results of this prototype demonstrate that the fixed pattern dispersion is reduced below a noise level of 15 e -, allowing the use of a single comparator or a low-resolution ADC per pixel column. A common element for most of the mentioned readout schemes is a low-noise, low power consumption, layout efficient in-pixel amplifier. A review of possible solutions for this element together with some experimental results is presented.

  17. Development of a new electronic personal neutron dosemeter using a CMOS active pixel sensor

    A CMOS active pixel sensor, originally designed for the tracking of minimum ionising charged particles in high-energy physics, has been recently used for the detection of fast neutrons. Data were taken at the IRSN Cadarache facility with a 241Am-Be ISO source and a polyethylene radiator. A high-intrinsic efficiency (1.2 x 10-3) has been obtained. It is in good agreement with both calculations and a MCNPX Monte Carlo simulation. This experiment paves the way for a fully electronic personal neutron dosemeter. (authors)

  18. Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

    Rymaszewski, Piotr; Breugnon, Patrick; Godiot, Stépahnie; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Hügging, Fabian; Krüger, Hans; Liu, Jian; Pangaud, Patrick; Peric, Ivan; Rozanov, Alexandre; Wang, Anqing; Wermes, Norbert

    2016-01-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

  19. Radiation hardness of a large area CMOS active pixel sensor for bio-medical applications

    Esposito, M; Diaz, O; Wells, K.; Anaxagoras, T; Allinson, NM

    2012-01-01

    A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor enclosed geometry and P+ doped guard rings to offer ionizing radiation tolerance. The detector was irradiated with 160 kVp X-rays up to a total dose of 94 kGy(Si) and remained functional. The radiation damage produced in the device has been studied, resulting in a dark current density increase per decade of 96±5 pA/cm/decade and a damage threshold of 204 Gy(Si). The damage produced in the detect...

  20. Prototype Active Silicon Sensor in 150 nm HR-CMOS technology for ATLAS Inner Detector Upgrade

    Rymaszewski, P.; Barbero, M.; Breugnon, P.; Godiot, S.; Gonella, L.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Liu, J.; Pangaud, P.; Peric, I.; Rozanov, A.; Wang, A.; Wermes, N.

    2016-02-01

    The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

  1. Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-01-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV...

  2. Development and application of the active surveillance of pathogens microarray to monitor bacterial gene flux

    Hinds Jason

    2008-10-01

    Full Text Available Abstract Background Human and animal health is constantly under threat by emerging pathogens that have recently acquired genetic determinants that enhance their survival, transmissibility and virulence. We describe the construction and development of an Active Surveillance of Pathogens (ASP oligonucleotide microarray, designed to 'actively survey' the genome of a given bacterial pathogen for virulence-associated genes. Results The microarray consists of 4958 reporters from 151 bacterial species and include genes for the identification of individual bacterial species as well as mobile genetic elements (transposons, plasmid and phage, virulence genes and antibiotic resistance genes. The ASP microarray was validated with nineteen bacterial pathogens species, including Francisella tularensis, Clostridium difficile, Staphylococcus aureus, Enterococcus faecium and Stenotrophomonas maltophilia. The ASP microarray identified these bacteria, and provided information on potential antibiotic resistance (eg sufamethoxazole resistance and sulfonamide resistance and virulence determinants including genes likely to be acquired by horizontal gene transfer (e.g. an alpha-haemolysin. Conclusion The ASP microarray has potential in the clinic as a diagnostic tool, as a research tool for both known and emerging pathogens, and as an early warning system for pathogenic bacteria that have been recently modified either naturally or deliberately.

  3. Photon small-field measurements with a CMOS active pixel sensor

    In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm2. The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications. (paper)

  4. Depleted Monolithic Active Pixel Sensors (DMAPS) implemented in LF-150 nm CMOS technology

    We present the recent development of Depleted Monolithic Active Pixel Sensors (DMAPS), implemented with an LFoundry (LF) 150 nm CMOS process. MAPS detectors based on an epi-layer have been matured in recent years and have attractive features in terms of reducing material budget and handling cost compared to conventional hybrid pixel detectors. However, the obtained signal is relatively small (∼1000 e−) due to the thin epi-layer, and charge collection time is relatively slow, e.g., in the order of 100 ns, because charges are mainly collected by diffusion. Modern commercial CMOS technology, however, offers advanced process options to overcome such difficulties and enable truly monolithic devices as an alternative to hybrid pixel sensors and charge coupled devices. Unlike in the case of the standard MAPS technologies with epi-layers, the LF process provides a high-resistivity substrate that enables large signal and fast charge collection by drift in a ∼50 μm thick depleted layer. Since this process also enables the use of deep n- and p-wells to isolate the collection electrode from the thin active device layer, PMOS and NMOS transistors are available for the readout electronics in each pixel cell. In order to evaluate the sensor and transistor characteristics, several collection electrodes variants and readout architectures have been implemented. In this report, we focus on its design aspect of the LF-DMAPS prototype chip

  5. Depleted Monolithic Active Pixel Sensors (DMAPS) implemented in LF-150 nm CMOS technology

    Kishishita, T.; Hemperek, T.; Krüger, H.; Wermes, N.

    2015-03-01

    We present the recent development of Depleted Monolithic Active Pixel Sensors (DMAPS), implemented with an LFoundry (LF) 150 nm CMOS process. MAPS detectors based on an epi-layer have been matured in recent years and have attractive features in terms of reducing material budget and handling cost compared to conventional hybrid pixel detectors. However, the obtained signal is relatively small (~1000 e-) due to the thin epi-layer, and charge collection time is relatively slow, e.g., in the order of 100 ns, because charges are mainly collected by diffusion. Modern commercial CMOS technology, however, offers advanced process options to overcome such difficulties and enable truly monolithic devices as an alternative to hybrid pixel sensors and charge coupled devices. Unlike in the case of the standard MAPS technologies with epi-layers, the LF process provides a high-resistivity substrate that enables large signal and fast charge collection by drift in a ~50 μm thick depleted layer. Since this process also enables the use of deep n- and p-wells to isolate the collection electrode from the thin active device layer, PMOS and NMOS transistors are available for the readout electronics in each pixel cell. In order to evaluate the sensor and transistor characteristics, several collection electrodes variants and readout architectures have been implemented. In this report, we focus on its design aspect of the LF-DMAPS prototype chip.

  6. Photon small-field measurements with a CMOS active pixel sensor

    Jiménez Spang, F.; Rosenberg, I.; Hedin, E.; Royle, G.

    2015-06-01

    In this work the dosimetric performance of CMOS active pixel sensors for the measurement of small photon beams is presented. The detector used consisted of an array of 520  × 520 pixels on a 25 µm pitch. Dosimetric parameters measured with this sensor were compared with data collected with an ionization chamber, a film detector and GEANT4 Monte Carlo simulations. The sensor performance for beam profiles measurements was evaluated for field sizes of 0.5  × 0.5 cm2. The high spatial resolution achieved with this sensor allowed the accurate measurement of profiles, beam penumbrae and field size under lateral electronic disequilibrium. Field size and penumbrae agreed within 5.4% and 2.2% respectively with film measurements. Agreements with ionization chambers better than 1.0% were obtained when measuring tissue-phantom ratios. Output factor measurements were in good agreement with ionization chamber and Monte Carlo simulation. The data obtained from this imaging sensor can be easily analyzed to extract dosimetric information. The results presented in this work are promising for the development and implementation of CMOS active pixel sensors for dosimetry applications.

  7. On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

    Deveaux, M; Dorokhov, A; Doering, D; Heymes, J; Kachel, M; Koziel, M; Linnik, B; Müntz, C; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is fo...

  8. Characterisation of regional variations in a stitched CMOS active pixel sensor

    Stitched, large area, complementary metal-oxide-semiconductor (CMOS), active pixel sensors (APS) show promises for X-ray imaging applications. In this paper we present an investigation of the effects of stitching on uniformity of sensor response for an experimental APS. The sensor, known as LAS (large area sensor), was made by reticular stitching onto a single silicon wafer of a 5x5 array of regions consisting of 270x270 pixels with 40 μm pixel pitch, to yield 1350x1350 pixels and an imaging area of 54x54 mm. Data acquired from two different sensors of the same type were filtered to remove spiking pixels and electromagnetic interference (EMI). The non-linear compensation (NLC) technique for CMOS sensor analysis was used to determine the variation in gain, read noise, full well capacity and dynamic range between stitched regions. Variations across stitched regions were analysed using profiles, analysis of pixel variations at stitch boundaries and using a measurement of non-uniformity within a stitched region. The results showed that non-uniformity variations were present, which increased with signal (1.5-3.5% at dark signal, rising to 3-8%). However, these were found to be smaller than variations caused by differences in readout electronics, particularly at low signal levels. The results suggest these variations should be correctable using standard calibration methods.

  9. A CMOS Energy Harvesting and Imaging (EHI) Active Pixel Sensor (APS) Imager for Retinal Prosthesis.

    Ay, S U

    2011-12-01

    A CMOS image sensor capable of imaging and energy harvesting on same focal plane is presented for retinal prosthesis. The energy harvesting and imaging (EHI) active pixel sensor (APS) imager was designed, fabricated, and tested in a standard 0.5 μm CMOS process. It has 54 × 50 array of 21 × 21 μm(2) EHI pixels, 10-bit supply boosted (SB) SAR ADC, and charge pump circuits consuming only 14.25 μW from 1.2 V and running at 7.4 frames per second. The supply boosting technique (SBT) is used in an analog signal chain of the EHI imager. Harvested solar energy on focal plane is stored on an off-chip capacitor with the help of a charge pump circuit with better than 70% efficiency. Energy harvesting efficiency of the EHI pixel was measured at different light levels. It was 9.4% while producing 0.41 V open circuit voltage. The EHI imager delivers 3.35 μW of power was delivered to a resistive load at maximum power point operation. The measured pixel array figure of merit (FoM) was 1.32 pW/frame/pixel while imager figure of merit (iFoM) including whole chip power consumption was 696 fJ/pixel/code for the EHI imager. PMID:23852551

  10. 12-inch-wafer-scale CMOS active-pixel sensor for digital mammography

    Heo, Sung Kyn; Kosonen, Jari; Hwang, Sung Ha; Kim, Tae Woo; Yun, Seungman; Kim, Ho Kyung

    2011-03-01

    This paper describes the development of an active-pixel sensor (APS) panel, which has a field-of-view of 23.1×17.1 cm and features 70-μm-sized pixels arranged in a 3300×2442 array format, for digital mammographic applications. The APS panel was realized on 12-inch wafers based on the standard complementary metal-oxide-semiconductor (CMOS) technology without physical tiling processes of several small-area sensor arrays. Electrical performance of the developed panel is described in terms of dark current, full-well capacity and leakage current map. For mammographic imaging, the optimized CsI:Tl scintillator is experimentally determined by being combined with the developed panel and analyzing im aging characteristics, such as modulation-transfer function, noise-power spectrum, detective quantum efficiency, image l ag, and contrast-detail analysis by using the CDMAM 3.4 phantom. With these results, we suggest that the developed CMOS-based detector can be used for conventional and advanced digital mammographic applications.

  11. Full colour RGB OLEDs on CMOS for active-matrix OLED microdisplays

    Kreye, D.; Toerker, M.; Vogel, U.; Amelung, J.

    2006-08-01

    Microdisplays are used in various optical devices such as headsets, viewfinders and helmet-mounted displays. The use of organic light emitting diodes (OLEDs) in a microdisplay on silicone substrate provides the opportunity of lower power consumption and higher optical performance compared to other near-to-eye display technologies. Highly efficient, low-voltage, top emitting OLEDs are well suitable for the integration into a CMOSprocess. By reducing the operating voltage for the OLEDs below 5V, the costs for the CMOS process can be reduced significantly, because a standard process without high-voltage option can be used. Various OLED stacks on silicone substrate are presented, suitable for full colour (RGB) applications. Red and green emitting phosphorescent OLEDs and blue emitting fluorescent OLEDs all with doped charge transport layers were prepared on a two metal layer CMOS test substrate without active transistor area. Afterwards, the different test displays were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.)

  12. A Real-time Auto-detection Method for Random Telegraph Signal (RTS) Noise Detection in CMOS Active pixel sensors

    CMOS Active pixel sensors (CMOS APS) are attractive for use in the innermost layers of charged particle trackers, due to their good tradeoffs among the key performances. However, CMOS APS can be greatly influenced by random telegraph signal (RTS) noise, which can cause particle tracking or energy calculation failures. In-depth research of pixels' RTS behavior stimulates the interest of the methods for RTS noise detection, reconstruction and parameters extraction. In this paper, a real-time auto-detection method is proposed, using real-time Gaussian noise standard deviation as the detection threshold. Experimental results show that, compared with current methods using signal standard deviation as the thresholds, the proposed method is more sensitive in multi-level RTS detection and more effective in the case of RTS noise degradation

  13. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.;

    2015-01-01

    In this paper, we present an X-band doublebalanced mixer in SiGe BiCMOS technology. The mixer core consists of a LO Matched quad diode ring using diode-connected Heterojunction Bipolar Transistors (HBTs). The mixer is integrated with a low-noise, high-linearity active balun on the RF port and a m...

  14. Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor

    Plasma process-induced 'white pixel defect' (WPD) of CMOS active pixel sensor (APS) is studied for Si3N4 spacer etch back process by using a magnetically enhanced reactive ion etching (MERIE) system. WPD preferably takes place at the wafer edge region when the magnetized plasma is applied to Si3N4 etch. Plasma charging analysis reveals that the plasma charge-up characteristic is well matching the edge-intensive WPD generation, rather than the UV radiation. Plasma charging on APS transfer gate might lead to a gate leakage, which could play a role in generation of signal noise or WPD. In this article the WPD generation mechanism will be discussed from plasma charging point of view

  15. A 512x512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science

    In the last few years, CMOS sensors have become widely used for consumer applications, but little has been done for scientific instruments. In this paper we present the design and experimental characterisation of a Monolithic Active Pixel Sensor (MAPS) intended for a space science application. The sensor incorporates a 525x525 array of pixels on a 25 μm pitch. Each pixel contains a detector together with three transistors that are used for pixel reset, pixel selection and charge-to-voltage conversion. The detector consists of four n-well/p-substrate diodes combining optimum charge collection and low noise performance. The array readout is column-parallel with adjustable gain column amplifiers and a 10-bit single slope ADC. Data conversion takes place simultaneously for all the 525 pixels in one row. The ADC slope can be adjusted in order to give the best dynamic range for a given brightness of a scene. The digitised data are output on a 10-bit bus at 3 MHz. An on-chip state machine generates all of the control signals needed for the readout. All of the bias currents and voltages are generated on chip by a DAC that is programmable through an I2C compatible interface. The sensor was designed and fabricated on a standard 0.5 μm CMOS technology. The overall die size is 16.7 mmx19.9 mm including the associated readout electronics and bond pads. Preliminary test results show that the full-scale design works well, meeting the Star Tracker requirements with less than 1-bit noise, good linearity and good optical performance

  16. A 512×512 CMOS Monolithic Active Pixel Sensor with integrated ADCs for space science

    Prydderch, M. L.; Waltham, N. J.; Turchetta, R.; French, M. J.; Holt, R.; Marshall, A.; Burt, D.; Bell, R.; Pool, P.; Eyles, C.; Mapson-Menard, H.

    2003-10-01

    In the last few years, CMOS sensors have become widely used for consumer applications, but little has been done for scientific instruments. In this paper we present the design and experimental characterisation of a Monolithic Active Pixel Sensor (MAPS) intended for a space science application. The sensor incorporates a 525×525 array of pixels on a 25 μm pitch. Each pixel contains a detector together with three transistors that are used for pixel reset, pixel selection and charge-to-voltage conversion. The detector consists of four n-well/p-substrate diodes combining optimum charge collection and low noise performance. The array readout is column-parallel with adjustable gain column amplifiers and a 10-bit single slope ADC. Data conversion takes place simultaneously for all the 525 pixels in one row. The ADC slope can be adjusted in order to give the best dynamic range for a given brightness of a scene. The digitised data are output on a 10-bit bus at 3 MHz. An on-chip state machine generates all of the control signals needed for the readout. All of the bias currents and voltages are generated on chip by a DAC that is programmable through an I 2C compatible interface. The sensor was designed and fabricated on a standard 0.5 μm CMOS technology. The overall die size is 16.7 mm×19.9 mm including the associated readout electronics and bond pads. Preliminary test results show that the full-scale design works well, meeting the Star Tracker requirements with less than 1-bit noise, good linearity and good optical performance.

  17. Improved Design of Active Pixel CMOS Sensors for Charged Particle Detection

    The Department of Energy (DOE) nuclear physics program requires developments in detector instrumentation electronics with improved energy, position and timing resolution, sensitivity, rate capability, stability, dynamic range, and background suppression. The current Phase-I project was focused on analysis of standard-CMOS photogate Active Pixel Sensors (APS) as an efficient solution to this challenge. The advantages of the CMOS APS over traditional hybrid approaches (i.e., separate detection regions bump-bonded to readout circuits) include greatly reduced cost, low power and the potential for vastly larger pixel counts and densities. However, challenges remain in terms of the signal-to-noise ratio (SNR) and readout speed (currently on the order of milliseconds), which is the major problem for this technology. Recent work has shown that the long readout time for photogate APS is due to the presence of (interface) traps at the semiconductor-oxide interface. This Phase-I work yielded useful results in two areas: (a) Advanced three-dimensional (3D) physics-based simulation models and simulation-based analysis of the impact of interface trap density on the transient charge collection characteristics of existing APS structures; and (b) Preliminary analysis of the feasibility of an improved photogate pixel structure (i.e., new APS design) with an induced electric field under the charge collecting electrode to enhance charge collection. Significant effort was dedicated in Phase-I to the critical task of implementing accurate interface trap models in CFDRC's NanoTCAD 3D semiconductor device-physics simulator. This resulted in validation of the new NanoTCAD models and simulation results against experimental (published) data, within the margin of uncertainty associated with obtaining device geometry, material properties, and experimentation details. Analyses of the new, proposed photogate APS design demonstrated several promising trends

  18. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

  19. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    Miucci, A.; Gonella, L.; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; La Rosa, A.; Muenstermann, D.; George, M.; Große-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J. C.; Liu, J.; Barbero, M.; Rozanov, A.; HV-CMOS Collaboration

    2014-05-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown.

  20. Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology

    Kishishita, T.; Hemperek, T.; Rymaszewski, P.; Hirono, T.; Krüger, H.; Wermes, N.

    2016-07-01

    We present the recent development of DMAPS (Depleted Monolithic Active Pixel Sensor), implemented with a Toshiba 130 nm CMOS process. Unlike in the case of standard MAPS technologies which are based on an epi-layer, this process provides a high-resistive substrate that enables larger signal and faster charge collection by drift in a 50 - 300 μm thick depleted layer. Since this process also enables the use of deep n-wells to isolate the collection electrodes from the thin active device layer, NMOS and PMOS transistors are available for the readout electronics in each pixel cell. In order to characterize the technology, we implemented a simple three transistor readout with a variety of pixel pitches and input FET sizes. This layout variety gives us a clue on sensor characteristics for future optimization, such as the input detector capacitance or leakage current. In the initial measurement, the radiation spectra were obtained from 55Fe with an energy resolution of 770 eV (FWHM) and 90Sr with the MVP of 4165 e-.

  1. Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

    Elbakri, I A; McIntosh, B J; Rickey, D W

    2009-03-21

    We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result. PMID:19242050

  2. A capacitor-free CMOS LDO regulator with AC-boosting and active-feedback frequency compensation

    A capacitor-free CMOS low-dropout (LDO) regulator for system-on-chip (SoC) applications is presented. By adopting AC-boosting and active-feedback frequency compensation (ACB-AFFC), the proposed LDO regulator, which is independent of an off-chip capacitor, provides high closed-loop stability. Moreover, a slew rate enhancement circuit is adopted to increase the slew rate and decrease the output voltage dips when the load current is suddenly switched from low to high. The LDO regulator is designed and fabricated in a 0.6 μm CMOS process. The active silicon area is only 770 x 472 μm2. Experimental results show that the total error of the output voltage due to line variation is less than ±0.197%. The load regulation is only 0.35 mV/mA when the load current changes from 0 to 100 mA.

  3. Nano CMOS

    Malay Ranjan Tripathy

    2009-05-01

    Full Text Available Complementary metal-oxide-semiconductor (CMOS has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discussed in this article. The challenges and opportunities of nano CMOS technology are outlined here.

  4. Next-Generation Active-Pixel Sensor Devices With CMOS-avalanche photodiodes

    Modern high-energy physics experiments that explore the fundamental properties of matter rely on large, sophisticated instruments for tracking particle decay events with large detector arrays. The performance of these instruments is limited by the available detector technology. Future progress depends on breakthroughs in the sensitivity, speed and signal-to-noise performance of the detectors. Phase I research successfully developed and tested many different pixel designs. Several different pixel and circuit applications were designed based on previously manufactured chips, but with the vertex detector application in mind. We have characterized the noise performance and sensitivity of CMOS APD pixels using several different types of radiation and selected the best designs. Phase II will were are concerned with transforming our test structures into fully functional detector elements with the appropriate processing and readout electronics integrated with large arrays of pixels. We investigated methods to increase the active area and reduce the noise while implementing an event-driven readout scheme to drastically increase the readout speed and simplify the data stream

  5. Effect and suppression of parasitic surface damage in neutron irradiated CMOS Monolithic Active Pixel Sensors

    Deveaux, M; Scharrer, P; Stroth, J

    2016-01-01

    CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those applications require a substantial tolerance to both, ionizing and non-ionizing radiation. To allow for a focused optimization of the radiation tolerance, prototypes are tested by irradiating the devices either with purely ionizing radiation (e.g. soft X-rays) or the most pure sources of non-ionizing radiation available (e.g. reactor neutrons). In the second case, it is typically assumed that the impact of the parasitic $\\gamma$-rays found in the neutron beams is negligible. We checked this assumption by irradiating MAPS with $\\gamma$-rays and comparing the radiation damage generated with the one in neutron irradiated sensors. We conclude that the parasitic radiation doses may cause non-negligible radiation damage. Based on the results we propose a procedure to recognize and to ...

  6. Integrated Circuit of CMOS DC-DC Buck Converter with Differential Active Inductor

    Kaoutar Elbakkar

    2011-11-01

    Full Text Available In this paper, we propose a new design of DC-DC buck converter (BC, which the spiral inductor is replaced by a differential gyrator with capacitor load (gyrator-C implemented in 0.18um CMOS process. The gyrator-C transforms the capacitor load (which is the parasitic capacitor of MOSFETS to differential active inductor DAI. The low-Q value of DAI at switching frequency of converter (few hundred kHz is boosted by adding a negative impedance converter (NIC. The transistor parameters of DAI and NIC can be properly chosen to achieve the desirable value of equivalent inductance L (few tens H, and the maximum-Q value at the switching frequency, and thus the efficiency of converter is improved. Experimental results show that the converter supplied with an input voltage of 1V, provides an output voltage of 0.74V and output ripple voltage of 10mV at 155 kHz and Q-value is maximum (#8776;4226 at this frequency.

  7. Radiation-hard active CMOS pixel sensors for HL-LHC detector upgrades

    Backhaus, Malte

    2015-02-01

    The luminosity of the Large Hadron Collider (LHC) will be increased during the Long Shutdown of 2022 and 2023 (LS3) in order to increase the sensitivity of its experiments. A completely new inner detector for the ATLAS experiment needs to be developed to withstand the extremely harsh environment of the upgraded, so-called High-Luminosity LHC (HL-LHC). High radiation hardness as well as granularity is mandatory to cope with the requirements in terms of radiation damage as well as particle occupancy. A new silicon detector concept that uses commercial high voltage and/or high resistivity full complementary metal-oxide-semiconductor (CMOS) processes as active sensor for pixel and/or strip layers has risen high attention, because it potentially provides high radiation hardness and granularity and at the same time reduced price due to the commercial processing and possibly relaxed requirements for the hybridization technique. Results on the first prototypes characterized in a variety of laboratory as well as test beam environments are presented.

  8. Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

    Battaglia, Marco; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-01-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease o...

  9. Characterisation of a CMOS active pixel sensor for use in the TEAM microscope

    Battaglia, Marco; Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad; Giubilato, Piero; Gnani, Dario; Radmilovic, Velimir

    2010-10-01

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5×9.5 μm2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 and 300 keV electrons is (12.1±0.7) and (7.4±0.6) μm, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78±0.04 at 80 keV and 0.74±0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 and 300 keV electrons becomes (6.7±0.3) and (2.4±0.2) μm, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ≃30%, corresponding to a reduction in full-well depth from ˜39 to ˜27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

  10. Characterisation of a CMOS active pixel sensor for use in the TEAM microscope

    Battaglia, Marco, E-mail: MBattaglia@lbl.go [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Santa Cruz Institute of Particle Physics, University of California at Santa Cruz, CA 95064 (United States); Contarato, Devis; Denes, Peter; Doering, Dionisio; Duden, Thomas; Krieger, Brad [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Giubilato, Piero [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Dipartimento di Fisica, Universita degli Studi, Padova I-35131 (Italy); Gnani, Dario; Radmilovic, Velimir [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-10-21

    A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5{mu}m{sup 2} pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 and 300 keV electrons is (12.1{+-}0.7) and (7.4{+-}0.6){mu}m, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78{+-}0.04 at 80 keV and 0.74{+-}0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 and 300 keV electrons becomes (6.7{+-}0.3) and (2.4{+-}0.2){mu}m, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by {approx_equal}30%, corresponding to a reduction in full-well depth from {approx}39 to {approx}27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

  11. The Dexela 2923 CMOS X-ray detector: A flat panel detector based on CMOS active pixel sensors for medical imaging applications

    Complementary metal-oxide-semiconductors (CMOS) active pixel sensors (APS) have been introduced recently in many scientific applications. This work reports on the performance (in terms of signal and noise transfer) of an X-ray detector that uses a novel CMOS APS which was developed for medical X-ray imaging applications. For a full evaluation of the detector's performance, electro-optical and X-ray characterizations were carried out. The former included measuring read noise, full well capacity and dynamic range. The latter, which included measuring X-ray sensitivity, presampling modulation transfer function (pMTF), noise power spectrum (NPS) and the resulting detective quantum efficiency (DQE), was assessed under three beam qualities (28 kV, 50 kV (RQA3) and 70 kV (RQA5) using W/Al) all in accordance with the IEC standard. The detector features an in-pixel option for switching the full well capacity between two distinct modes, high full well (HFW) and low full well (LFW). Two structured CsI:Tl scintillators of different thickness (a “thin” one for high resolution and a thicker one for high light efficiency) were optically coupled to the sensor array to optimize the performance of the system for different medical applications. The electro-optical performance evaluation of the sensor results in relatively high read noise (∼360 e−), high full well capacity (∼1.5×106 e−) and wide dynamic range (∼73 dB) under HFW mode operation. When the LFW mode is used, the read noise is lower (∼165) at the expense of a reduced full well capacity (∼0.5×106 e−) and dynamic range (∼69 dB). The maximum DQE values at low frequencies (i.e. 0.5 lp/mm) are high for both HFW (0.69 for 28 kV, 0.71 for 50 kV and 0.75 for 70 kV) and LFW (0.69 for 28 kV and 0.7 for 50 kV) modes. The X-ray performance of the studied detector compares well to that of other mammography and general radiography systems, obtained under similar experimental conditions. This demonstrates the

  12. Nano CMOS

    Malay Ranjan Tripathy

    2009-01-01

    Complementary metal-oxide-semiconductor (CMOS) has become major challenge to scaling and integration. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. CMOS variability in the scaling technology becoming very important concern because of limitation of process control over statistical variability related to the fundamental discreteness of charge and matter. Different aspects responsible for device variability are discu...

  13. Measurements on HV-CMOS active sensors after irradiation to HL-LHC fluences

    Ristic, B.

    2015-04-01

    During the long shutdown (LS) 3 beginning 2022 the LHC will be upgraded for higher luminosities pushing the limits especially for the inner tracking detectors of the LHC experiments. In order to cope with the increased particle rate and radiation levels the ATLAS Inner Detector will be completely replaced by a purely silicon based one. Novel sensors based on HV-CMOS processes prove to be good candidates in terms of spatial resolution and radiation hardness. In this paper measurements conducted on prototypes built in the AMS H18 HV-CMOS process and irradiated to fluences of up to 2·1016 neq cm-2 are presented.

  14. Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

    Ristic, Branislav

    2016-01-01

    Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

  15. Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization

    Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu [Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Konstantinidis, Anastasios C. [Department of Medical Physics and Biomedical Engineering, University College London, London WC1E 6BT, United Kingdom and Diagnostic Radiology and Radiation Protection, Christie Medical Physics and Engineering, The Christie NHS Foundation Trust, Manchester M20 4BX (United Kingdom); Patel, Tushita [Department of Physics, University of Virginia, Charlottesville, Virginia 22908 (United States)

    2015-11-15

    Purpose: Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50–300 e{sup −}) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). Methods: In this study, imaging performance of a large area (29 × 23 cm{sup 2}) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterized and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165–400 μm at various MGDs. The impact of electronic noise on CNR was also evaluated. Results: The LFW mode shows better DQE at low air kerma (K{sub a} < 10 μGy) and should be used for DBT. At current DBT applications, air kerma (K{sub a} ∼ 10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165–400 μm in size can be resolved using a MGD range of 0.3–1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at

  16. A high frequency active voltage doubler in standard CMOS using offset-controlled comparators for inductive power transmission.

    Lee, Hyung-Min; Ghovanloo, Maysam

    2013-06-01

    In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std . CMOS process, occupying 0.144 mm(2) of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

  17. A 90 nm CMOS, 6 μW Power-Proportional Acoustic Sensing Frontend for Voice Activity Detection

    Badami, Komail; Lauwereins, Steven; Meert, Wannes; Verhelst, Marian

    2016-01-01

    This work presents a sub-6 µW acoustic front-end for speech/non-speech classification in a voice activity detection (VAD) in 90 nm CMOS. Power consumption of the VAD system is minimized by architectural design around a new Power-Proportional sensing paradigm and the use of machine-learning assisted moderate-precision analog analytics for classification. Power-Proportional sensing allows for hierarchical and context-aware scaling of the frontend’s power consumption depending on the complexity ...

  18. Measurements on HV-CMOS Active Sensors After Irradiation to HL-LHC fluences

    Ristic, B

    2015-01-01

    During the long shutdown (LS) 3 beginning 2022 the LHC will be upgraded for higher luminosities pushing the limits especially for the inner tracking detectors of the LHC experiments. In order to cope with the increased particle rate and radiation levels the ATLAS Inner Detector will be completely replaced by a purely silicon based one. Novel sensors based on HV-CMOS processes prove to be good candidates in terms of spatial resolution and radiation hardness. In this paper measurements conducted on prototypes built in the AMS H18 HV-CMOS process and irradiated to fluences of up to $2\\cdot10^{16}\\,\\text{n}_\\text{eq}\\text{cm}^{-2}$ are presented.

  19. Performance of a Fast Binary Readout CMOS Active Pixel Sensor Chip Designed for Charged Particle Detection

    Degerli, Y.; Besancon, M.; Besson, A.; Claus, G; Deptuch, G; Dulinski, W.; Fourches, N.; Goffe, M.; Himmi, A.; Li, Y.; Li, Y.; Lutz, P.; Orsini, F.; Szelezniak, M.

    2006-01-01

    We report on the performance of the MIMOSA8 (HiMAPS1) chip. The chip is a 128$, times ,$32 pixels array where 24 columns have discriminated binary outputs and eight columns analog test outputs. Offset correction techniques are used extensively in this chip to overcome process related mismatches. The array is divided in four blocks of pixels with different conversion factors and is controlled by a serially programmable sequencer. MIMOSA8 is a representative of the CMOS sensors development opti...

  20. Development of a Standardised Readout System for Active Pixel Sensors in HV/HR-CMOS Technologies for ATLAS Inner Detector Upgrades

    The LHC Phase-II Upgrade results in new challenges for tracking detectors for example in terms of cost effectiveness, resolution and radiation hardness. Active Pixel Sensors in HV/HR-CMOS technologies show promising results coping with these challenges. In order to demonstrate the feasibility of hybrid modules with active CMOS sensors and readout chips for the future ATLAS Inner Tracker, ATLAS R and D activities have started. After introducing the basic concepts and the demonstrator program, the development of an ATLAS compatible readout system will be presented as well as tuning procedures and measurements with demonstrator modules to test the readout system

  1. Development of CMOS Monolithic Active Pixel Sensors for the ALICE-ITS Outer Barrel and for the CBM-MVD

    Deveaux, Michael

    2015-01-01

    After more than a decade of R&D;, CMOS Monolithic Active Pixel Sensors (MAPS or CPS) have proven to offer concrete answers to the demanding requirements of subatomic physics experi- ments. Their main advantages result from their low material budget, their very high granularity and their integrated signal processing circuitry, which allows coping with high particle rates. Moreover, they offer a valuable radiation tolerance and may be produced at low cost. Sensors of the MIMOSA series have offered an opportunity for nuclear and particle physics exper- iments to address with improved sensitivity physics studies requiring an accurate reconstruction of short living and soft particles. One of their major applications is the STAR-PXL detector, which is the first vertex detector based on MAPS. While this experiment is successfully taking data since two years, it was found that the 0.35 m CMOS technology used for this purpose is not suited for upcoming applications like the CBM micro-vertex detector (MVD) and the ...

  2. Investigation of Toshiba 130nm CMOS process as a possible candidate for active silicon sensors in HEP and X-ray experiments

    Following the advances of commercial semiconductor manufacturing technologies there has recently been an increased interest within experimental physics community in applying CMOS manufacturing processes to developing active silicon sensors. Possibility of applying high voltage bias combined with high resistivity substrate allows for better depletion of sensor and therefore quicker and more efficient charge collection. One of processes that accommodates those features is Toshiba 130 nm CMOS technology (CMOS3E). Within our group a test chip was designed to examine the suitability of this technology for physics experiment (both for HEP and X-ray imaging). Design consisted of 4 pixel matrices with total of 12 different pixel flavors allowing for evaluation of various pixel geometries and architectures in terms of depletion depth, noise performance, charge collection efficiency, etc. During this talk initial outcome of this evaluation is presented, starting with brief introduction to technology itself, followed by results of TCAD simulations, description of final design and first measurements results.

  3. Carbohydrate microarrays

    Park, Sungjin; Gildersleeve, Jeffrey C; Blixt, Klas Ola; Shin, Injae

    2012-01-01

    In the last decade, carbohydrate microarrays have been core technologies for analyzing carbohydrate-mediated recognition events in a high-throughput fashion. A number of methods have been exploited for immobilizing glycans on the solid surface in a microarray format. This microarray-based technol......In the last decade, carbohydrate microarrays have been core technologies for analyzing carbohydrate-mediated recognition events in a high-throughput fashion. A number of methods have been exploited for immobilizing glycans on the solid surface in a microarray format. This microarray......-based technology has been widely employed for rapid analysis of the glycan binding properties of lectins and antibodies, the quantitative measurements of glycan-protein interactions, detection of cells and pathogens, identification of disease-related anti-glycan antibodies for diagnosis, and fast assessment of...

  4. Characterizing the Activation of the Wnt Signaling Pathway in Hilar Cholangiocarcinoma Using a Tissue Microarray Approach

    Chen, W.; Huang, L.; Liang, J.; Cai, J.; Lei, Y.; Lai, J.; Liang, L.; Zhang, K.

    2016-01-01

    Hilar cholangiocarcinoma (HCCA) is an invasive hepatic malignancy that is difficult to biopsy; therefore, novel markers of HCCA prognosis are needed. Here, the level of canonical Wnt activation in patients with HCCA, intrahepatic cholangiocarcinoma (IHCC), and congenital choledochal cysts (CCC) was compared to understand the role of Wnt signaling in HCCA. Pathology specimens from HCCA (n=129), IHCC (n=31), and CCC (n=45) patients were used to construct tissue microarrays. Wnt2, Wnt3, β-catenin, TCF4, c-Myc, and cyclin D1 were detected by immunohistochemistry. Parallel correlation analysis was used to analyze differences in protein levels between the HCCA, IHCC, and CCC groups. Univariate and multivariate analyses were used to determine independent predictors of successful resection and prognosis in the HCCA group. The protein levels of Wnt2, β-catenin, TCF4, c-Myc, and cyclin D1 were significantly higher in HCCA compared to IHHC or CCC. Wnt signaling activation (Wnt2+, Wnt3+, nuclear β-catenin+, nuclear TCF4+) was significantly greater in HCCA tissues than CCC tissues. Univariable analyses indicated that expression of cyclin D1 as well as Wnt signaling activation, and partial Wnt activation (Wnt2+ or Wnt3+ and nuclear β-catenin+ or nuclear TCF4+) predicted successful resection, but only cyclin D1 expression remained significant in multivariable analyses. Only partial Wnt activation was an independent predictor of survival time. Proteins in the canonical Wnt signaling pathway were present at higher levels in HCCA and correlated with tumor resecility and patient prognosis. These results suggest that Wnt pathway analysis may be a useful marker for clinical outcome in HCCA. PMID:26972709

  5. Modeling of an integrated active feedback preamplifier in a 025 mu m CMOS technology at cryogenic temperatures

    Saramad, Shahyar; Bucher, M; Despeisse, Matthieu; Jarron, Pierre; Pelloux, Nicolas; Rivetti, A

    2003-01-01

    This paper describes the modeling of a standard 0.25 mu m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). The extracted parameters were then used to optimize the performance of a room temperature designed active feedback front-end preamplifier (AFP) at 130 K. The results show that with a small adjustment of the extracted parameters it is possible to have a reasonable model at low temperatures. By optimizing the bias conditions at 130 K, a fall time down to 1.5 ns and a double pulse resolution of 6.5 ns were measured for NA60 proton beamscope. The proposed approach will also allow a low temperature design optimization for future projects, which will not be possible using only standard models provided by the foundry. (16 refs).

  6. A FPGA-based cluster finder for CMOS monolithic active pixel sensors of the MIMOSA-26 family

    CMOS Monolithic Active Pixel Sensors (MAPS) demonstrated excellent performances in the field of charged particle tracking. Among their strong points are an single point resolution few μm, a light material budget of 0.05% X0 in combination with a good radiation tolerance and high rate capability. Those features make the sensors a valuable technology for vertex detectors of various experiments in heavy ion and particle physics. To reduce the load on the event builders and future mass storage systems, we have developed algorithms suited for preprocessing and reducing the data streams generated by the MAPS. This real-time processing employs remaining free resources of the FPGAs of the readout controllers of the detector and complements the on-chip data reduction circuits of the MAPS.

  7. Microarray Analysis Reveals the Molecular Basis of Antiarthritic Activity of Huo-Luo-Xiao-Ling Dan

    Hua Yu

    2013-01-01

    Full Text Available Rheumatoid arthritis (RA is a chronic inflammatory disease of autoimmune origin. Huo-luo-xiao-ling dan (HLXL is an herbal mixture that has been used in traditional Chinese medicine over several decades to treat chronic inflammatory diseases including RA. However, the mechanism of the anti-arthritic action of this herbal remedy is poorly understood at the molecular level. In this study, we determined by microarray analysis the effects of HLXL on the global gene expression profile of the draining lymph node cells (LNC in the rat adjuvant arthritis (AA model of human RA. In LNC restimulated in vitro with the disease-related antigen mycobacterial heat-shock protein 65 (Bhsp65, 84 differentially expressed genes (DEG (64 upregulated and 20 downregulated versus 120 DEG (94 upregulated and 26 downregulated were identified in HLXL-treated versus vehicle (Water-treated rats, respectively, and 62 DEG (45 upregulated and 17 downregulated were shared between the two groups. The most affected pathways in response to HLXL treatment included immune response, inflammation, cellular proliferation and apoptosis, and metabolic processes, many of which are directly relevant to arthritis pathogenesis. These results would advance our understanding of the mechanisms underlying the anti-arthritic activity of HLXL.

  8. Non-linear responsivity characterisation of a CMOS Active Pixel Sensor for high resolution imaging of the Jovian system

    The Jovian system is the subject of study for the Jupiter Icy Moon Explorer (JUICE), an ESA mission which is planned to launch in 2022. The scientific payload is designed for both characterisation of the magnetosphere and radiation environment local to the spacecraft, as well as remote characterisation of Jupiter and its satellites. A key instrument on JUICE is the high resolution and wide angle camera, JANUS, whose main science goals include detailed characterisation and study phases of three of the Galilean satellites, Ganymede, Callisto and Europa, as well as studies of other moons, the ring system, and irregular satellites. The CIS115 is a CMOS Active Pixel Sensor from e2v technologies selected for the JANUS camera. It is fabricated using 0.18 μ m CMOS imaging sensor process, with an imaging area of 2000 × 1504 pixels, each 7 μ m square. A 4T pixel architecture allows for efficient correlated double sampling, improving the readout noise to better than 8 electrons rms, whilst the sensor is operated in a rolling shutter mode, sampling at up to 10 Mpixel/s at each of the four parallel outputs.A primary parameter to characterise for an imaging device is the relationship that converts the sensor's voltage output back to the corresponding number of electrons that were detected in a pixel, known as the Charge to Voltage Factor (CVF). In modern CMOS sensors with small feature sizes, the CVF is known to be non-linear with signal level, therefore a signal-dependent measurement of the CIS115's CVF has been undertaken and is presented here. The CVF is well modelled as a quadratic function leading to a measurement of the maximum charge handling capacity of the CIS115 to be 3.4 × 104 electrons. If the CIS115's response is assumed linear, its CVF is 21.1 electrons per mV (1/47.5 μ V per electron)

  9. CMOS circuits manual

    Marston, R M

    1995-01-01

    CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

  10. A CMOS active pixel sensor system for laboratory- based x-ray diffraction studies of biological tissue.

    Bohndiek, Sarah E; Cook, Emily J; Arvanitis, Costas D; Olivo, Alessandro; Royle, Gary J; Clark, Andy T; Prydderch, Mark L; Turchetta, Renato; Speller, Robert D

    2008-02-01

    X-ray diffraction studies give material-specific information about biological tissue. Ideally, a large area, low noise, wide dynamic range digital x-ray detector is required for laboratory-based x-ray diffraction studies. The goal of this work is to introduce a novel imaging technology, the CMOS active pixel sensor (APS) that has the potential to fulfil all these requirements, and demonstrate its feasibility for coherent scatter imaging. A prototype CMOS APS has been included in an x-ray diffraction demonstration system. An industrial x-ray source with appropriate beam filtration is used to perform angle dispersive x-ray diffraction (ADXRD). Optimization of the experimental set-up is detailed including collimator options and detector operating parameters. Scatter signatures are measured for 11 different materials, covering three medical applications: breast cancer diagnosis, kidney stone identification and bone mineral density calculations. Scatter signatures are also recorded for three mixed samples of known composition. Results are verified using two independent models for predicting the APS scatter signature: (1) a linear systems model of the APS and (2) a linear superposition integral combining known monochromatic scatter signatures with the input polychromatic spectrum used in this case. Cross validation of experimental, modelled and literature results proves that APS are able to record biologically relevant scatter signatures. Coherent scatter signatures are sensitive to multiple materials present in a sample and provide a means to quantify composition. In the future, production of a bespoke APS imager for x-ray diffraction studies could enable simultaneous collection of the transmitted beam and scattered radiation in a laboratory-based coherent scatter system, making clinical transfer of the technique attainable. PMID:18199908

  11. Comprehensive Analysis of Human Endogenous Retrovirus Transcriptional Activity in Human Tissues with a Retrovirus-Specific Microarray

    Seifarth, Wolfgang; Frank, Oliver; Zeilfelder, Udo; Spiess, Birgit; Alex D Greenwood; Hehlmann, Rüdiger; Leib-Mösch, Christine

    2005-01-01

    Retrovirus-like sequences account for 8 to 9% of the human genome. Among these sequences, about 8,000 pol-containing proviral elements have been identified to date. As part of our ongoing search for active and possibly disease-relevant human endogenous retroviruses (HERVs), we have recently developed an oligonucleotide-based microarray. The assay allows for both the detection and the identification of most known retroviral reverse transcriptase (RT)-related nucleic acids in biological samples...

  12. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    Zhao, C.; Konstantinidis, A. C.; Zheng, Y.; Anaxagoras, T.; Speller, R. D.; Kanicki, J.

    2015-12-01

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm-1 and a DQE of around 0.5 at spatial frequencies  CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

  13. Ionizing and non Ionizing radiation damage in a large area CMOS active pixel sensor for medical applications

    Esposito, Michela; Anaxagoras, Thalis; Price, Tony; Manolopoulos, Spyros; Evans, Philip; Wells, Kevin; Allinson, Nigel

    2015-01-01

    Currently, large-area medical sensors are based on amorphous flat panel technology. Sensors based on monolithic CMOS APS can offer many advantages in terms of image quality and reduced dose requirements. One constraint on the take-up of APS has been their restricted operating life due to radiation damage. Here we present a new wafer scale CMOS APS, designed for medical applications and hardened-by-design with reference to its performance in typical operating environments. The detector was ...

  14. CMOS Image Sensors for High Speed Applications

    M. Jamal Deen

    2009-01-01

    Full Text Available Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies, result in compelling advantages in speed and system throughput. Since there is a practical limit on the minimum pixel size (4~5 μm due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. Such smart pixels truly show the potential of CMOS technology for imaging applications allowing CMOS imagers to achieve the image quality and global shuttering performance necessary to meet the demands of ultrahigh-speed applications. In this paper, a review of CMOS-based high-speed imager design is presented and the various implementations that target ultrahigh-speed imaging are described. This work also discusses the design, layout and simulation results of an ultrahigh acquisition rate CMOS active-pixel sensor imager that can take 8 frames at a rate of more than a billion frames per second (fps.

  15. Large area CMOS image sensors

    CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

  16. Synchrotron based planar imaging and digital tomosynthesis of breast and biopsy phantoms using a CMOS active pixel sensor.

    Szafraniec, Magdalena B; Konstantinidis, Anastasios C; Tromba, Giuliana; Dreossi, Diego; Vecchio, Sara; Rigon, Luigi; Sodini, Nicola; Naday, Steve; Gunn, Spencer; McArthur, Alan; Olivo, Alessandro

    2015-03-01

    The SYRMEP (SYnchrotron Radiation for MEdical Physics) beamline at Elettra is performing the first mammography study on human patients using free-space propagation phase contrast imaging. The stricter spatial resolution requirements of this method currently force the use of conventional films or specialized computed radiography (CR) systems. This also prevents the implementation of three-dimensional (3D) approaches. This paper explores the use of an X-ray detector based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology as a possible alternative, for acquisitions both in planar and tomosynthesis geometry. Results indicate higher quality of the images acquired with the synchrotron set-up in both geometries. This improvement can be partly ascribed to the use of parallel, collimated and monochromatic synchrotron radiation (resulting in scatter rejection, no penumbra-induced blurring and optimized X-ray energy), and partly to phase contrast effects. Even though the pixel size of the used detector is still too large - and thus suboptimal - for free-space propagation phase contrast imaging, a degree of phase-induced edge enhancement can clearly be observed in the images. PMID:25498332

  17. A CMOS VLSI cochlea

    Lyon, Richard F.; Mead, Carver A.

    1988-01-01

    An engineered system that hears, such as a speech recognizer, can be designed by modeling the cochlea, or inner ear, and higher levels of the auditory nervous system. To be useful in such a system, a model of the cochlea should incorporate a variety of known effects, such as an asymmetric lowpass/bandpass response at each output channel, a short ringing time, and active adaptation to a wide range of input signal levels. An analog electronic cochlea has been built in CMOS VLSI technology...

  18. 50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

    Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm−1 and a DQE of around 0.5 at spatial frequencies  <1 mm−1. In addition, the modeling results were used to calculate the image signal-to-noise ratio (SNRi) of microcalcifications at various mean glandular dose (MGD). For an average breast (5 cm thickness, 50% glandular fraction), 165 μm microcalcifications can be distinguished at a MGD of 27% lower than the clinical value (∼1.3 mGy). To detect 100 μm microcalcifications, further optimizations of the CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered. (paper)

  19. Chromosome Microarray.

    Anderson, Sharon

    2016-01-01

    Over the last half century, knowledge about genetics, genetic testing, and its complexity has flourished. Completion of the Human Genome Project provided a foundation upon which the accuracy of genetics, genomics, and integration of bioinformatics knowledge and testing has grown exponentially. What is lagging, however, are efforts to reach and engage nurses about this rapidly changing field. The purpose of this article is to familiarize nurses with several frequently ordered genetic tests including chromosomes and fluorescence in situ hybridization followed by a comprehensive review of chromosome microarray. It shares the complexity of microarray including how testing is performed and results analyzed. A case report demonstrates how this technology is applied in clinical practice and reveals benefits and limitations of this scientific and bioinformatics genetic technology. Clinical implications for maternal-child nurses across practice levels are discussed. PMID:27276104

  20. Development and Application of a New Microarray- Based Method for High-Throughput Screening of Carbohydrate Active Enzymes

    Vidal Melgosa, Silvia

    biological roles in plants and in addition to biofuel production they are extensively used in other industrial processes including in detergents, textiles, paper and the food industry. A vast repertoire of CAZymes exists in nature but there is a growing disparity between our ability to putatively identify...... new CAZymes and our ability to empirically characterise their activities. This is a serious hindrance for the optimal exploitation of their diversity and there is therefore a pressing need for the development of new high-throughput technology for CAZyme screening. Here we describe the development of a...... new method for assessing CAZyme activities that is based on combining the multiplexing capacity of carbohydrate microarrays with the specificity of monoclonal antibodies and carbohydrate binding modules. The results presented in this thesis demonstrate that this new high-throughput semi...

  1. Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

    Gee, R.; Kemeny, S.; Kim, Q.; Mendis, S.; Nakamura, J.; Nixon, R.; Ortiz, M.; Pain, B.; Staller, C.; Zhou, Z; Fossum, E.

    1994-01-01

    JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.

  2. Fully CMOS Memristor Based Chaotic Circuit

    S. C. Yener

    2014-12-01

    Full Text Available This paper demonstrates the design of a fully CMOS chaotic circuit consisting of only DDCC based memristor and inductance simulator. Our design is composed of these active blocks using CMOS 0.18 µm process technology with symmetric ±1.25 V supply voltages. A new single DDCC+ based topology is used as the inductance simulator. Simulation results verify that the design proposed satisfies both memristor properties and the chaotic behavior of the circuit. Simulations performed illustrate the success of the proposed design for the realization of CMOS based chaotic applications.

  3. Scaling CMOS

    G.A Brown

    2004-01-01

    Full Text Available The scaling of silicon integrated circuits to smaller physical dimensions became a primary activity of advanced device development almost as soon as the basic technology was established. The importance and persistence of this activity is rooted in the confluence of two of the strongest drives governing the business; the push for greater device performance, measured in terms of switching speed, and the desire for greater manufacturing profitability, dependent upon reduced cost per good device built.

  4. Pathway modeling of microarray data: A case study of pathway activity changes in the testis following in utero exposure to dibutyl phthalate (DBP)

    Ovacik, Meric A. [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Sen, Banalata [National Center for Environmental Assessment, U.S. Environmental Protection Agency, Research Triangle Park, NC 27709 (United States); Euling, Susan Y. [National Center for Environmental Assessment, Office of Research and Development, U.S. Environmental Protection Agency, Washington, DC 20460 (United States); Gaido, Kevin W. [U.S. Food and Drug Administration, Center for Veterinary Medicine, Office of New Animal Drug Evaluation, Division of Human Food Safety, Rockville, MD 20855 (United States); Ierapetritou, Marianthi G. [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Androulakis, Ioannis P., E-mail: yannis@rci.rutgers.edu [Chemical and Biochemical Engineering Department, Rutgers University, Piscataway, NJ 08854 (United States); Biomedical Engineering Department, Rutgers University, NJ 08854 (United States)

    2013-09-15

    Pathway activity level analysis, the approach pursued in this study, focuses on all genes that are known to be members of metabolic and signaling pathways as defined by the KEGG database. The pathway activity level analysis entails singular value decomposition (SVD) of the expression data of the genes constituting a given pathway. We explore an extension of the pathway activity methodology for application to time-course microarray data. We show that pathway analysis enhances our ability to detect biologically relevant changes in pathway activity using synthetic data. As a case study, we apply the pathway activity level formulation coupled with significance analysis to microarray data from two different rat testes exposed in utero to Dibutyl Phthalate (DBP). In utero DBP exposure in the rat results in developmental toxicity of a number of male reproductive organs, including the testes. One well-characterized mode of action for DBP and the male reproductive developmental effects is the repression of expression of genes involved in cholesterol transport, steroid biosynthesis and testosterone synthesis that lead to a decreased fetal testicular testosterone. Previous analyses of DBP testes microarray data focused on either individual gene expression changes or changes in the expression of specific genes that are hypothesized, or known, to be important in testicular development and testosterone synthesis. However, a pathway analysis may inform whether there are additional affected pathways that could inform additional modes of action linked to DBP developmental toxicity. We show that Pathway activity analysis may be considered for a more comprehensive analysis of microarray data.

  5. Pathway modeling of microarray data: A case study of pathway activity changes in the testis following in utero exposure to dibutyl phthalate (DBP)

    Pathway activity level analysis, the approach pursued in this study, focuses on all genes that are known to be members of metabolic and signaling pathways as defined by the KEGG database. The pathway activity level analysis entails singular value decomposition (SVD) of the expression data of the genes constituting a given pathway. We explore an extension of the pathway activity methodology for application to time-course microarray data. We show that pathway analysis enhances our ability to detect biologically relevant changes in pathway activity using synthetic data. As a case study, we apply the pathway activity level formulation coupled with significance analysis to microarray data from two different rat testes exposed in utero to Dibutyl Phthalate (DBP). In utero DBP exposure in the rat results in developmental toxicity of a number of male reproductive organs, including the testes. One well-characterized mode of action for DBP and the male reproductive developmental effects is the repression of expression of genes involved in cholesterol transport, steroid biosynthesis and testosterone synthesis that lead to a decreased fetal testicular testosterone. Previous analyses of DBP testes microarray data focused on either individual gene expression changes or changes in the expression of specific genes that are hypothesized, or known, to be important in testicular development and testosterone synthesis. However, a pathway analysis may inform whether there are additional affected pathways that could inform additional modes of action linked to DBP developmental toxicity. We show that Pathway activity analysis may be considered for a more comprehensive analysis of microarray data

  6. Fully CMOS Memristor Based Chaotic Circuit

    Yener, S. C.; H. H. Kuntman

    2014-01-01

    This paper demonstrates the design of a fully CMOS chaotic circuit consisting of only DDCC based memristor and inductance simulator. Our design is composed of these active blocks using CMOS 0.18 µm process technology with symmetric ±1.25 V supply voltages. A new single DDCC+ based topology is used as the inductance simulator. Simulation results verify that the design proposed satisfies both memristor properties and the chaotic behavior of the circuit. Simulations performed illustrate the succ...

  7. Longitudinal microarray analysis of cell surface antigens on peripheral blood mononuclear cells from HIV+ individuals on highly active antiretroviral therapy

    Wang Bin

    2008-03-01

    Full Text Available Abstract Background The efficacy of highly active antiretroviral therapy (HAART determined by simultaneous monitoring over 100 cell-surface antigens overtime has not been attempted. We used an antibody microarray to analyze changes in the expression of 135 different cell-surface antigens overtime on PBMC from HIV+ patients on HAART. Two groups were chosen, one (n = 6 achieved sustainable response by maintaining below detectable plasma viremia and the other (n = 6 responded intermittently. Blood samples were collected over an average of 3 years and 5–8 time points were selected for microarray assay and statistical analysis. Results Significant trends over time were observed for the expression of 7 cell surface antigens (CD2, CD3epsilon, CD5, CD95, CD36, CD27 and CD28 for combined patient groups. Between groups, expression levels of 10 cell surface antigens (CD11a, CD29, CD38, CD45RO, CD52, CD56, CD57, CD62E, CD64 and CD33 were found to be differential. Expression levels of CD9, CD11a, CD27, CD28 and CD52, CD44, CD49d, CD49e, CD11c strongly correlated with CD4+ and CD8+ T cell counts, respectively. Conclusion Our findings not only detected markers that may have potential prognostic/diagnostic values in evaluating HAART efficacy, but also showed how density of cell surface antigens could be efficiently exploited in an array-like manner in relation to HAART and HIV-infection. The antigens identified in this study should be further investigated by other methods such as flow cytometry for confirmation as biological analysis of these antigens may help further clarify their role during HAART and HIV infection.

  8. CAOS-CMOS camera.

    Riza, Nabeel A; La Torre, Juan Pablo; Amin, M Junaid

    2016-06-13

    Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical unit to realize a high dynamic range imager for extreme light contrast conditions. The experimentally demonstrated CAOS-CMOS camera is built using a digital micromirror device, a silicon point-photo-detector with a variable gain amplifier, and a silicon CMOS sensor with a maximum rated 51.3 dB dynamic range. White light imaging of three different brightness simultaneously viewed targets, that is not possible by the CMOS sensor, is achieved by the CAOS-CMOS camera demonstrating an 82.06 dB dynamic range. Applications for the camera include industrial machine vision, welding, laser analysis, automotive, night vision, surveillance and multispectral military systems. PMID:27410361

  9. Analog filters in nanometer CMOS

    Uhrmann, Heimo; Zimmermann, Horst

    2014-01-01

    Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

  10. Application of a novel functional gene microarray to probe the functional ecology of ammonia oxidation in nitrifying activated sludge.

    Michael D Short

    Full Text Available We report on the first study trialling a newly-developed, functional gene microarray (FGA for characterising bacterial and archaeal ammonia oxidisers in activated sludge. Mixed liquor (ML and media biofilm samples from a full-scale integrated fixed-film activated sludge (IFAS plant were analysed with the FGA to profile the diversity and relative abundance of ammonia-oxidising archaea and bacteria (AOA and AOB respectively. FGA analyses of AOA and AOB communities revealed ubiquitous distribution of AOA across all samples - an important finding for these newly-discovered and poorly characterised organisms. Results also revealed striking differences in the functional ecology of attached versus suspended communities within the IFAS reactor. Quantitative assessment of AOB and AOA functional gene abundance revealed a dominance of AOB in the ML and approximately equal distribution of AOA and AOB in the media-attached biofilm. Subsequent correlations of functional gene abundance data with key water quality parameters suggested an important functional role for media-attached AOB in particular for IFAS reactor nitrification performance and indicate possible functional redundancy in some IFAS ammonia oxidiser communities. Results from this investigation demonstrate the capacity of the FGA to resolve subtle ecological shifts in key microbial communities in nitrifying activated sludge and indicate its value as a tool for better understanding the linkages between the ecology and performance of these engineered systems.

  11. Predicting transcription factor activities from combined analysis of microarray and ChIP data: a partial least squares approach

    Strimmer Korbinian

    2005-06-01

    Full Text Available Abstract Background The study of the network between transcription factors and their targets is important for understanding the complex regulatory mechanisms in a cell. Unfortunately, with standard microarray experiments it is not possible to measure the transcription factor activities (TFAs directly, as their own transcription levels are subject to post-translational modifications. Results Here we propose a statistical approach based on partial least squares (PLS regression to infer the true TFAs from a combination of mRNA expression and DNA-protein binding measurements. This method is also statistically sound for small samples and allows the detection of functional interactions among the transcription factors via the notion of "meta"-transcription factors. In addition, it enables false positives to be identified in ChIP data and activation and suppression activities to be distinguished. Conclusion The proposed method performs very well both for simulated data and for real expression and ChIP data from yeast and E. Coli experiments. It overcomes the limitations of previously used approaches to estimating TFAs. The estimated profiles may also serve as input for further studies, such as tests of periodicity or differential regulation. An R package "plsgenomics" implementing the proposed methods is available for download from the CRAN archive.

  12. On-chip Phase Locked Loop (PLL) design for clock multiplier in CMOS Monolithic Active Pixel Sensors (MAPS)

    Sun, Q; Valin, I; Claus, G; Hu-Guo, Ch; Hu, Yu

    2009-01-01

    In a detector system, clock distribution to sensors must be controlled at a level allowing proper synchronisation. In order to reach theses requirements for the HFT (Heavy Flavor Tracker) upgrade at STAR (Solenoidal Tracker at RHIC), we have proposed to distribute a low frequency clock at 10 MHz which will be multiplied to 160 MHz in each sensor by a PLL. A PLL has been designed for period jitter less than 20 ps rms, low power consumption and manufactured in a 0.35 μm CMOS process.

  13. Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

    Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

    2014-01-01

    Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

  14. High-voltage CMOS detectors

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-07-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented.

  15. Empirical electro-optical and x-ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x-ray medical imaging.

    Arvanitis, C D; Bohndiek, S E; Royle, G; Blue, A; Liang, H X; Clark, A; Prydderch, M; Turchetta, R; Speller, R

    2007-12-01

    Monolithic complementary metal oxide semiconductor (CMOS) active pixel sensors with high performance have gained attention in the last few years in many scientific and space applications. In order to evaluate the increasing capabilities of this technology, in particular where low dose high resolution x-ray medical imaging is required, critical electro-optical and physical x-ray performance evaluation was determined. The electro-optical performance includes read noise, full well capacity, interacting quantum efficiency, and pixels cross talk. The x-ray performance, including x-ray sensitivity, modulation transfer function, noise power spectrum, and detection quantum efficiency, has been evaluated in the mammographic energy range. The sensor is a 525 x 525 standard three transistor CMOS active pixel sensor array with more than 75% fill factor and 25 x 25 microm pixel pitch. Reading at 10 f/s, it is found that the sensor has 114 electrons total additive noise, 10(5) electrons full well capacity with shot noise limited operation, and 34% interacting quantum efficiency at 530 nm. Two different structured CsI:Tl phosphors with thickness 95 and 115 microm, respectively, have been optically coupled via a fiber optic plate to the array resulting in two different system configurations. The sensitivity of the two different system configurations was 43 and 47 electrons per x-ray incident on the sensor. The MTF at 10% of the two different system configurations was 9.5 and 9 cycles/mm with detective quantum efficiency of 0.45 and 0.48, respectively, close to zero frequency at approximately 0.44 microC/kg (1.72 mR) detector entrance exposure. The detector was quantum limited at low spatial frequencies and its performance was comparable with high resolution a: Si and charge coupled device based x-ray imagers. The detector also demonstrates almost an order of magnitude lower noise than active matrix flat panel imagers. The results suggest that CMOS active pixel sensors when coupled

  16. Aptamer Microarrays

    Angel-Syrett, Heather; Collett, Jim; Ellington, Andrew D.

    2009-01-02

    In vitro selection can yield specific, high-affinity aptamers. We and others have devised methods for the automated selection of aptamers, and have begun to use these reagents for the construction of arrays. Arrayed aptamers have proven to be almost as sensitive as their solution phase counterparts, and when ganged together can provide both specific and general diagnostic signals for proteins and other analytes. We describe here technical details regarding the production and processing of aptamer microarrays, including blocking, washing, drying, and scanning. We will also discuss the challenges involved in developing standardized and reproducible methods for binding and quantitating protein targets. While signals from fluorescent analytes or sandwiches are typically captured, it has proven possible for immobilized aptamers to be uniquely coupled to amplification methods not available to protein reagents, thus allowing for protein-binding signals to be greatly amplified. Into the future, many of the biosensor methods described in this book can potentially be adapted to array formats, thus further expanding the utility of and applications for aptamer arrays.

  17. Activity Based High-Throughput Screening for Novel O-GlcNAc Transferase Substrates Using a Dynamic Peptide Microarray.

    Jie Shi

    Full Text Available O-GlcNAcylation is a reversible and dynamic protein post-translational modification in mammalian cells. The O-GlcNAc cycle is catalyzed by O-GlcNAc transferase (OGT and O-GlcNAcase (OGA. O-GlcNAcylation plays important role in many vital cellular events including transcription, cell cycle regulation, stress response and protein degradation, and altered O-GlcNAcylation has long been implicated in cancer, diabetes and neurodegenerative diseases. Recently, numerous approaches have been developed to identify OGT substrates and study their function, but there is still a strong demand for highly efficient techniques. Here we demonstrated the utility of the peptide microarray approach to discover novel OGT substrates and study its specificity. Interestingly, the protein RBL-2, which is a key regulator of entry into cell division and may function as a tumor suppressor, was identified as a substrate for three isoforms of OGT. Using peptide Ala scanning, we found Ser 420 is one possible O-GlcNAc site in RBL-2. Moreover, substitution of Ser 420, on its own, inhibited OGT activity, raising the possibility of mechanism-based development for selective OGT inhibitors. This approach will prove useful for both discovery of novel OGT substrates and studying OGT specificity.

  18. Beyond CMOS nanodevices 2

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

  19. Customized CMOS wavefront sensor

    Monteiro, D. W. L.; Vdovin, G.; Rocha, J.G.; Iordanov, V.; Loktev, M.; Sarro, P.

    2002-01-01

    We report on an integrated Hartmann wavefront sensor (WFS) using passive-pixel architecture and pixels clustered as position-sensitive detectors for dynamic wavefront analysis. This approach substitutes a conventional imager, such as a CCD or CMOS imager, by a customized detector, thus improving the overall speed performance. CMOS (complementary-metal- oxide-semiconductor) technology enables on-chip integration of several analog and digital circuitry. The sensor performance depends on the fea...

  20. Beyond CMOS nanodevices 1

    Balestra, Francis

    2014-01-01

    This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

  1. Monolithic Active Pixel Sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels

    Ballin, J A; Dauncey, P D; Magnan, A -M; Mikami, Y; Miller, O D; Noy, M; Rajovic, V; Stanitzki, M M; Stefanov, K D; Turchetta, R; Tyndel, M; Villani, E G; Watson, N K; Wilson, J A

    2008-01-01

    In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

  2. Monolithic Active Pixel Sensors (MAPS in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

    John Allan Wilson

    2008-09-01

    Full Text Available In this paper we present a novel, quadruple well process developed in a modern 0.18 mm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 mm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

  3. Statistical modelling of masked gene regulatory pathway changes across microarray studies of interferon gamma activated macrophages

    Forster, Thorsten

    2014-01-01

    Interferon gamma (IFN-γ) regulation of macrophages plays an essential role in innate immunity and pathogenicity of viral infections by directing large and small genome-wide changes in the transcriptional program of macrophages. Smaller changes at the transcriptional level are difficult to detect but can have profound biological effects, motivating the hypothesis of this thesis that responses of macrophages to immune activation by IFN-γ include small quantitative changes that are m...

  4. Angiogenesis interactome and time course microarray data reveal the distinct activation patterns in endothelial cells.

    Liang-Hui Chu

    Full Text Available Angiogenesis involves stimulation of endothelial cells (EC by various cytokines and growth factors, but the signaling mechanisms are not completely understood. Combining dynamic gene expression time-course data for stimulated EC with protein-protein interactions associated with angiogenesis (the "angiome" could reveal how different stimuli result in different patterns of network activation and could implicate signaling intermediates as points for control or intervention. We constructed the protein-protein interaction networks of positive and negative regulation of angiogenesis comprising 367 and 245 proteins, respectively. We used five published gene expression datasets derived from in vitro assays using different types of blood endothelial cells stimulated by VEGFA (vascular endothelial growth factor A. We used the Short Time-series Expression Miner (STEM to identify significant temporal gene expression profiles. The statistically significant patterns between 2D fibronectin and 3D type I collagen substrates for telomerase-immortalized EC (TIME show that different substrates could influence the temporal gene activation patterns in the same cell line. We investigated the different activation patterns among 18 transmembrane tyrosine kinase receptors, and experimentally measured the protein level of the tyrosine-kinase receptors VEGFR1, VEGFR2 and VEGFR3 in human umbilical vein EC (HUVEC and human microvascular EC (MEC. The results show that VEGFR1-VEGFR2 levels are more closely coupled than VEGFR1-VEGFR3 or VEGFR2-VEGFR3 in HUVEC and MEC. This computational methodology can be extended to investigate other molecules or biological processes such as cell cycle.

  5. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    Feigl, S.

    2014-03-01

    In this ATLAS upgrade R&D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given.

  6. Performance of capacitively coupled active pixel sensors in 180 nm HV-CMOS technology after irradiation to HL-LHC fluences

    In this ATLAS upgrade R and D project, we explore the concept of using a deep-submicron HV-CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the basic design of the HV2FEI4 test ASIC, results after irradiation with X-rays to 862 Mrad and neutrons up to 1016(1 MeV neq)/cm2 will be presented. Finally, a brief outlook on further development plans is given

  7. Active Fail-Safe Micro-Array Flow Control for Advanced Embedded Propulsion Systems

    Anderson, Bernhard H.; Mace, James L.; Mani, Mori

    2009-01-01

    The primary objective of this research effort was to develop and analytically demonstrate enhanced first generation active "fail-safe" hybrid flow-control techniques to simultaneously manage the boundary layer on the vehicle fore-body and to control the secondary flow generated within modern serpentine or embedded inlet S-duct configurations. The enhanced first-generation technique focused on both micro-vanes and micro-ramps highly-integrated with micro -jets to provide nonlinear augmentation for the "strength' or effectiveness of highly-integrated flow control systems. The study focused on the micro -jet mass flow ratio (Wjet/Waip) range from 0.10 to 0.30 percent and jet total pressure ratios (Pjet/Po) from 1.0 to 3.0. The engine bleed airflow range under study represents about a 10 fold decrease in micro -jet airflow than previously required. Therefore, by pre-conditioning, or injecting a very small amount of high-pressure jet flow into the vortex generated by the micro-vane and/or micro-ramp, active flow control is achieved and substantial augmentation of the controlling flow is realized.

  8. Cytokines in cerebrospinal fluid of neurosyphilis patients: Identification of Urokinase plasminogen activator using antibody microarrays.

    Lu, Ping; Zheng, Dao-Cheng; Fang, Chang; Huang, Jin-Mei; Ke, Wu-Jian; Wang, Liu-Yuan; Zeng, Wei-Ying; Zheng, He-Ping; Yang, Bin

    2016-04-15

    Little is known regarding protein responses to syphilis infection in cerebrospinal fluid (CSF) of patients presenting with neurosyphilis. Protein and antibody arrays offer a new opportunity to gain insights into global protein expression profiles in these patients. Here we obtained CSF samples from 46 syphilis patients, 25 of which diagnosed as having central nervous system involvement based on clinical and laboratory findings. The CSF samples were then analyzed using a RayBioH L-Series 507 Antibody Array system designed to simultaneously analyze 507 specific cytokines. The results indicated that 41 molecules showed higher levels in patients with neurosyphilis in comparison with patients without neural involvement. For validation by single target ELISA, we selected five of them (MIP-1a, I-TAC/CXCL11, Urokinase plasminogen activator [uPA], and Oncostatin M) because they have previously been found to be involved in central nervous system (CNS) disorders. The ELISA tests confirmed that uPA levels were significantly higher in the CSF of neurosyphilis patients (109.1±7.88pg/ml) versus patients without CNS involvement (63.86±4.53pg/ml, p<0.0001). There was also a clear correlation between CSF uPA levels and CSF protein levels (p=0.0128) as well as CSF-VDRL titers (p=0.0074) used to diagnose neurosyphilis. No significant difference between the two groups of patients, however, was found in uPA levels in the serum, suggesting specific activation of the inflammatory system in the CNS but not the periphery in neurosyphilis patients. We conclude that measurements of uPA levels in CSF may be an additional parameter for diagnosing neurosyphilis. PMID:27049560

  9. Microarray analysis of nemorosone-induced cytotoxic effects on pancreatic cancer cells reveals activation of the unfolded protein response (UPR)

    Holtrup, Frank; Bauer, Andrea; Fellenberg, Kurt; Hilger, Ralf A; Wink, Michael; Hoheisel, Jörg D

    2011-01-01

    BACKGROUND AND PURPOSE Pancreatic cancer is one of the leading cancer-related causes of death due to high chemo-resistance and fast metastasation. Nemorosone, a polycyclic polyprenylated acylphloroglucinol, has recently been identified as a promising anticancer agent. Here, we examine its growth-inhibitory effects on pancreatic cancer cells. Based on transcription profiling, a molecular mode of action is proposed. EXPERIMENTAL APPROACH Nemorosone cytotoxicity was assessed by the resazurin proliferation assay on pancreatic cancer cells and fibroblasts. Apoptosis was determined by Annexin V/propidium iodide staining as well as cytochrome c and caspase activation assays. Staining with the voltage-dependent dye JC-1 and fluorescence microscopy were used to detect effects on mitochondrial membrane potential. Total RNA was isolated from treated cell lines and subjected to microarray analysis, subsequent pathway identification and modelling. Gene expression data were validated by quantitative polymerase chain reaction and siRNA-mediated gene knock-down. KEY RESULTS Nemorosone significantly inhibited cancer cell growth, induced cytochrome c release and subsequent caspase-dependent apoptosis, rapidly abolished mitochondrial membrane potential and elevated cytosolic calcium levels, while fibroblasts were largely unaffected. Expression profiling revealed 336 genes to be affected by nemorosone. A total of 75 genes were altered in all three cell lines, many of which were within the unfolded protein response (UPR) network. DNA damage inducible transcript 3 was identified as a key regulator in UPR-mediated cell death. CONCLUSIONS AND IMPLICATIONS Nemorosone could be a lead compound for the development of novel anticancer drugs amplifying the already elevated UPR level in solid tumours, thus driving them into apoptosis. This study forms the basis for further investigations identifying nemorosone's direct molecular target(s). PMID:21091652

  10. Decreased Expression of Inhibitor of Caspase-Activated DNase (ICAD in Renal Cell Carcinoma – Tissue Microarray of Human Samples

    Retnagowri Rajandram

    2016-03-01

    Full Text Available Although primary localised tumours of renal cell carcinoma (RCC can be treated relatively successfully with surgery, metastatic RCC has poor prognosis because of late diagnosis and resistance to therapies. In the present study, we were interested in profiling the protein expression of “inhibitor of caspase-activated DNase” (ICAD, an apoptosis inhibitor, in kidney cancer and its paired normal kidney. Immunohistochemistry with automated batch staining and morphometry using digital pathology were used to compare ICAD in 121 RCC specimens with their paired normal kidney tissue. Tissue microarray of formalin-fixed, paraffin-embedded archival tissue was used. Intensity and localisation of ICAD were compared between normal and cancer samples, and against grading within the cancers. The results demonstrated that, in this cohort, ICAD was highly expressed in the proximal tubular epithelium of normal kidney, and significantly decreased in clear cell RCC tissue (p < 0.05 as well as other subtypes of RCC (p < 0.01 compared with normal kidney. There was a tendency towards nuclear localisation of ICAD in clear cell RCC, but not in other subtypes of RCC. No significant association was found between ICAD intensity and grade of RCC. In summary, down-regulation of ICAD occurs in RCC. ICAD normally inhibits DNA fragmentation and apoptosis; thus, its down-regulation was unexpected in a cancer known for its resistance to apoptosis. However, these RCC samples were from primary, not metastatic, RCC sites, and down-regulated ICAD may be part of a progressive pathway that promotes RCC metastasis.

  11. Vulnerability and failure modes of CMOS/SOS or CMOS/SO: technologies in nuclear and space environments

    Nuclear and space environments consist of several fluxes of ionizing particles. Some of them (photons, electrons, protons) lead to progressive degradation of characteristics. Heavy ions ionize active layers along tracks, and involve specific effects. These effects are discussed in the cases of bipolar (TTL-LS, ECL), CMOS on Sapphire and CMOS on Insulator technologies, through different versions of a unique microprocessor 2901

  12. CMOS dot matrix microdisplay

    Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

    2011-03-01

    Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

  13. MicroCMOS design

    Song, Bang-Sup

    2011-01-01

    MicroCMOS Design covers key analog design methodologies with an emphasis on analog systems that can be integrated into systems-on-chip (SoCs). Starting at the transistor level, this book introduces basic concepts in the design of system-level complementary metal-oxide semiconductors (CMOS). It uses practical examples to illustrate circuit construction so that readers can develop an intuitive understanding rather than just assimilate the usual conventional analytical knowledge. As SoCs become increasingly complex, analog/radio frequency (RF) system designers have to master both system- and tran

  14. Wideband CMOS receivers

    Oliveira, Luis

    2015-01-01

    This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

  15. Ion traps fabricated in a CMOS foundry

    We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

  16. Integrated 60GHz RF beamforming in CMOS

    Yu, Yikun; van Roermund, Arthur H M

    2011-01-01

    ""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

  17. Microarrays, Integrated Analytical Systems

    Combinatorial chemistry is used to find materials that form sensor microarrays. This book discusses the fundamentals, and then proceeds to the many applications of microarrays, from measuring gene expression (DNA microarrays) to protein-protein interactions, peptide chemistry, carbodhydrate chemistry, electrochemical detection, and microfluidics.

  18. Scaling and Pixel Crosstalk Considerations for CMOS Image Sensor

    JIN Xiang-liang; CHEN Jie(member,IEEE); QIU Yu-lin

    2003-01-01

    With the scaling development of the minimum lithographic size,the scaling trend of CMOS imager pixel size and fill factor has been computed according to the Moore rule.When the CMOS minimum lithographic feature scales down to 0.35 μm,the CCD image pixel size is not so easy to be reduced and but the CMOS image pixel size benefits from the scaling minimum lithographic feature. However, when the CMOS technology is downscaled to or under 0.35 μm,the fabrication of CMOS image sensors will be limited by the standard CMOS process in both ways of shallow trench isolation and source/drain junction,which results in pixel crosstalk.The impact of the crosstalk on the active pixel CMOS image sensor is analyzed based on the technology scaling.Some suppressed crosstalk methods have been reviewed.The best way is that combining the advantages of CMOS and SOI technology to fabricate the image sensors will reduce the pixel crosstalk.

  19. Implantable CMOS Biomedical Devices

    Toshihiko Noda

    2009-11-01

    Full Text Available The results of recent research on our implantable CMOS biomedical devices are reviewed. Topics include retinal prosthesis devices and deep-brain implantation devices for small animals. Fundamental device structures and characteristics as well as in vivo experiments are presented.

  20. Estrogenic activity of bio-degradation products of C-heavy oil revealed by gene-expression profiling using an oligo-DNA microarray system

    Degradation of heavy oil by bacteria to decompose organic compounds such as aliphatic and aromatic hydrocarbons has been used in bioremediation. However, the biological and environmental effects of the degradation products including intermediates are still not clear. Here, we monitored the degradation of C-heavy oil by analyzing the products formed in cultures with oil-degrading bacteria (complex microbes or a single bacterial strain). Furthermore, proliferation assays using breast cancer MCF-7 cells and gene-expression profiling of MCF-7 cells using oligonucleotide-DNA microarrays were performed to evaluate the estrogenic activity of the degradation products. While the products did not show any significant cell-proliferative activity, the oil samples cultured for longer periods (2–3 months), whether cultured with mixed microbes or a single bacterial strain, showed gene-expression profiles similar to that of 17β-estradiol (E2). These results suggest that oil-degradation products have estrogenic activity, and estrogen-like components could possibly be produced during the degradation process. - Highlights: ► Oligonucleotide-DNA microarrays were used to monitor bio-degradation of C-heavy oil. ► The oil samples showed gene-expression profiles similar to that of 17β-estradiol. ► Estrogen-like components were produced during the degradation process. ► The effect of bio-degradation products on ecosystems needs more attention. ► DNA microarray assays may be useful for monitoring such products. - We found that the degradation products of C-heavy oil contained estrogen-like components, suggesting the effect of bio-degradation products on ecosystems.

  1. DNA Microarray Technique

    Thakare SP

    2012-11-01

    Full Text Available DNA Microarray is the emerging technique in Biotechnology. The many varieties of DNA microarray or DNA chip devices and systems are described along with their methods for fabrication and their use. It also includes screening and diagnostic applications. The DNA microarray hybridization applications include the important areas of gene expression analysis and genotyping for point mutations, single nucleotide polymorphisms (SNPs, and short tandem repeats (STRs. In addition to the many molecular biological and genomic research uses, this review covers applications of microarray devices and systems for pharmacogenomic research and drug discovery, infectious and genetic disease and cancer diagnostics, and forensic and genetic identification purposes.

  2. CMOS Image Sensors: Electronic Camera On A Chip

    Fossum, E. R.

    1995-01-01

    Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

  3. High performances monolithic CMOS detectors for space applications

    Saint-Pé, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Vignon, Bruno; Magnan, Pierre; Farre, Jean; Corbière, Franck; Martin-Gonthier, Philippe

    2001-01-01

    During the last 10 years, research about CMOS image sensors (also called APS -Active Pixel Sensors) has been intensively carried out, in order to offer an alternative to CCDs as image sensors. This is particularly the case for space applications as CMOS image sensors feature characteristics which are obviously of interest for flight hardware: parallel or semi-parallel architecture, on chip control and processing electronics, low power dissipation, high level ofradiation tolerance... Many imag...

  4. CMOS monolithic pixel sensors research and development at LBNL

    D Contarato; J-M Bussat; P Denes; L Griender; T Kim; T Stezeberger; H Weiman; M Battaglia; B Hooberman; L Tompkins

    2007-12-01

    This paper summarizes the recent progress in the design and characterization of CMOS pixel sensors at LBNL. Results of lab tests, beam tests and radiation hardness tests carried out at LBNL on a test structure with pixels of various sizes are reported. The first results of the characterization of back-thinned CMOS pixel sensors are also reported, and future plans and activities are discussed.

  5. CMOS front ends for millimeter wave wireless communication systems

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  6. Protein Microarrays: Novel Developments and Applications

    Berrade, Luis; Garcia, Angie E.; Camarero, Julio A.

    2010-01-01

    Protein microarray technology possesses some of the greatest potential for providing direct information on protein function and potential drug targets. For example, functional protein microarrays are ideal tools suited for the mapping of biological pathways. They can be used to study most major types of interactions and enzymatic activities that take place in biochemical pathways and have been used for the analysis of simultaneous multiple biomolecular interactions involving protein-protein, ...

  7. DESIGN AND IMPLEMETTATION OF CMOS IMAGE SENSOR

    Liu Yu; Wang Guoyu

    2007-01-01

    A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35 μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used.The CMOS image sensor chip is implemented based on the 0.35 μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.

  8. OLED-on-CMOS integration for optoelectronic sensor applications

    Vogel, Uwe; Kreye, Daniel; Reckziegel, Sven; Törker, Michael; Grillberger, Christiane; Amelung, Jörg

    2007-02-01

    Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon- CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices.

  9. Optimisation algorithms for microarray biclustering.

    Perrin, Dimitri; Duhamel, Christophe

    2013-01-01

    In providing simultaneous information on expression profiles for thousands of genes, microarray technologies have, in recent years, been largely used to investigate mechanisms of gene expression. Clustering and classification of such data can, indeed, highlight patterns and provide insight on biological processes. A common approach is to consider genes and samples of microarray datasets as nodes in a bipartite graphs, where edges are weighted e.g. based on the expression levels. In this paper, using a previously-evaluated weighting scheme, we focus on search algorithms and evaluate, in the context of biclustering, several variations of Genetic Algorithms. We also introduce a new heuristic "Propagate", which consists in recursively evaluating neighbour solutions with one more or one less active conditions. The results obtained on three well-known datasets show that, for a given weighting scheme, optimal or near-optimal solutions can be identified. PMID:24109756

  10. Monolithic CMOS Pixel R&D for the ILC at LBNL

    M. Battaglia; Abrams, G.; Denes, P.; Greiner, L. C.; Hooberman., B; Tompkins, L.; Wieman, H. H.

    2005-01-01

    An R&D program on monolithic CMOS pixel sensors for application at the ILC has been started at LBNL. This program profits of significant synergies with other R&D activities on CMOS pixel sensors. The project activities after the first semester of the R&D program are reviewed.

  11. Novel R pipeline for analyzing biolog phenotypic microarray data.

    Minna Vehkala; Mikhail Shubin; Connor, Thomas R; Thomson, Nicholas R.; Jukka Corander

    2015-01-01

    Data produced by Biolog Phenotype MicroArrays are longitudinal measurements of cells' respiration on distinct substrates. We introduce a three-step pipeline to analyze phenotypic microarray data with novel procedures for grouping, normalization and effect identification. Grouping and normalization are standard problems in the analysis of phenotype microarrays defined as categorizing bacterial responses into active and non-active, and removing systematic errors from the experimental data, resp...

  12. Comparators in nanometer CMOS technology

    Goll, Bernhard

    2015-01-01

    This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties. Starting from the basics of comparators and the transistor characteristics in nanometer CMOS, seven high-performance comparators developed by the authors in 120nm and 65nm CMOS are described extensively. Methods and measurement circuits for the characterization of advanced comparators are introduced. A synthesis of the largely differing aspects of demands on modern comparators and the properties of devices being available in nanometer CMOS, which are posed by the so-called nanometer hell of physics, is accomplished. The book summarizes the state of the art in integrated comparators. Advanced measurement circuits for characterization will be introduced as well as the method of characterization by bit-error analysis usually being used for characterization of optical receivers. ...

  13. CMOS Nonlinear Signal Processing Circuits

    Hung,; Yu-Cherng,

    2010-01-01

    The chapter describes various nonlinear signal processing CMOS circuits, including a high reliable WTA/LTA, simple MED cell, and low-voltage arbitrary order extractor. We focus the discussion on CMOS analog circuit design with reliable, programmable capability, and low voltage operation. It is a practical problem when the multiple identical cells are required to match and realized within a single chip using a conventional process. Thus, the design of high-reliable circuit is indeed needed. Th...

  14. ProCAT: a data analysis approach for protein microarrays

    Zhu, Xiaowei; Gerstein, Mark; Snyder, Michael

    2006-01-01

    Protein microarrays provide a versatile method for the analysis of many protein biochemical activities. Existing DNA microarray analytical methods do not translate to protein microarrays due to differences between the technologies. Here we report a new approach, ProCAT, which corrects for background bias and spatial artifacts, identifies significant signals, filters nonspecific spots, and normalizes the resulting signal to protein abundance. ProCAT provides a powerful and flexible new approac...

  15. Design and Fabrication of Vertically-Integrated CMOS Image Sensors

    Orit Skorka

    2011-04-01

    Full Text Available Technologies to fabricate integrated circuits (IC with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

  16. Study of antimutagenic and antioxidant activities of gallic acid and 1,2,3,4,6-pentagalloylglucose from Pistacia lentiscus. Confirmation by microarray expression profiling.

    Abdelwahed, Afef; Bouhlel, Ines; Skandrani, Ines; Valenti, Kita; Kadri, Malika; Guiraud, Pascal; Steiman, Régine; Mariotte, Anne-Marie; Ghedira, Kamel; Laporte, François; Dijoux-Franca, Marie-Geneviève; Chekir-Ghedira, Leila

    2007-01-01

    In vitro antioxidant and antimutagenic activities of two polyphenols isolated from the fruits of Pistacia lentiscus was assessed. Antioxidant activity was determined by the ability of each compound to scavenge the free radical 1,1-diphenyl-2-picrylhydrazyl (DPPH*), to inhibit xanthine oxidase and to inhibit the lipid peroxidation induced by H(2)O(2) in K562 cell line. Antimutagenic activity was assayed with SOS chromotest using Escherichia coli PQ37 as tester strain and Comet assay using K562 cell line. 1,2,3,4,6-Pentagalloylglucose was found to be more effective to scavenge DPPH* radical and protect against lipid peroxidation. Moreover, these two compounds induced an inhibitory activity against nifuroxazide and aflatoxin B1 mutagenicity. The protective effect exhibited by these molecules was also determined by analysis of gene expression as response to an oxidative stress. For this purpose, we used a cDNA-microarray containing 82 genes related to cell defense, essentially represented by antioxidant and DNA repair proteins. We found that 1,2,3,4,6-pentagalloylglucose induced a decrease in the expression of 11 transcripts related to antioxidant enzymes family (GPX1, TXN, AOE372, SHC1 and SEPW1) and DNA repair (POLD1, APEX, POLD2, MPG, PARP and XRCC5). The use of Gallic acid, induced expression of TXN, TXNRD1, AOE372, GSS (antioxidant enzymes) and LIG4, POLD2, MPG, GADD45A, PCNA, RPA2, DDIT3, HMOX2, XPA, TDG, ERCC1 and GTF2H1 (DNA repair) as well as the repression of GPX1, SEPW1, POLD1 and SHC1 gene expression. PMID:17129579

  17. Protein microarrays for systems biology

    Lina Yang; Shujuan Guo; Yang Li; Shumin Zhou; Shengce Tao

    2011-01-01

    Systems biology holds the key for understanding biological systems on a system level. It eventually holds the key for the treatment and cure of complex diseases such as cancer,diabetes, obesity, mental disorders, and many others. The '-omics' technologies, such as genomics, transcriptomics,proteomics, and metabonomics, are among the major driving forces of systems biology. Featured as highthroughput, miniaturized, and capable of parallel analysis,protein microarrays have already become an important technology platform for systems biology, In this review, we will focus on the system level or global analysis of biological systems using protein microarrays. Four major types of protein microarrays will be discussed: proteome microarrays, antibody microarrays, reverse-phase protein arrays,and lectin microarrays. We will also discuss the challenges and future directions of protein microarray technologies and their applications for systems biology. We strongly believe that protein microarrays will soon become an indispensable and invaluable tool for systems biology.

  18. Microarray technology and its applications

    Müller, UR

    2006-01-01

    It presents detailed overviews of the different techniques of fabricating microarrays, of the chemistries and preparative steps involved, of the different types of microarrays, and of the instrumentation and optical issues involved.

  19. Combining Affymetrix microarray results

    Doerge RW

    2005-03-01

    Full Text Available Abstract Background As the use of microarray technology becomes more prevalent it is not unusual to find several laboratories employing the same microarray technology to identify genes related to the same condition in the same species. Although the experimental specifics are similar, typically a different list of statistically significant genes result from each data analysis. Results We propose a statistically-based meta-analytic approach to microarray analysis for the purpose of systematically combining results from the different laboratories. This approach provides a more precise view of genes that are significantly related to the condition of interest while simultaneously allowing for differences between laboratories. Of particular interest is the widely used Affymetrix oligonucleotide array, the results of which are naturally suited to a meta-analysis. A simulation model based on the Affymetrix platform is developed to examine the adaptive nature of the meta-analytic approach and to illustrate the usefulness of such an approach in combining microarray results across laboratories. The approach is then applied to real data involving a mouse model for multiple sclerosis. Conclusion The quantitative estimates from the meta-analysis model tend to be closer to the "true" degree of differential expression than any single lab. Meta-analytic methods can systematically combine Affymetrix results from different laboratories to gain a clearer understanding of genes' relationships to specific conditions of interest.

  20. Development of high gain photodiode array based on commercial CMOS process

    Developing photodiodes in commercial CMOS process and integrating it with readout electronics without any process modification involves formidable challenges. Due to low resistivity of the wafer used in commercial CMOS process, the junction capacitance per area of the PN junction is quite large thereby limiting the size of the active area of the photodiode leading to degradation in high speed response. On the contrary, the sensitivity and quantum efficiency of the optical detector tends to improve with increase in active area of the detector. The major challenge in designing high gain photodiode in sub micron CMOS technology is to avoid the premature perimeter edge breakdown or the soft breakdown. This paper reports two different design approaches of high gain photodiode arrays in commercial 0.35 um CMOS technology and HV CMOS process

  1. Improved Space Object Observation Techniques Using CMOS Detectors

    Schildknecht, T.; Hinze, A.; Schlatter, P.; Silha, J.; Peltonen, J.; Santti, T.; Flohrer, T.

    2013-08-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contain their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. Presently applied and proposed optical observation strategies for space debris surveys and space surveillance applications had to be analyzed. The major design drivers were identified and potential benefits from using available and future CMOS sensors were assessed. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, the characteristics of a particular CMOS sensor available at the Zimmerwald observatory were analyzed by performing laboratory test measurements.

  2. CMOS Integrated Carbon Nanotube Sensor

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  3. Navigating public microarray databases.

    Penkett, Christopher J; Bähler, Jürg

    2004-01-01

    With the ever-escalating amount of data being produced by genome-wide microarray studies, it is of increasing importance that these data are captured in public databases so that researchers can use this information to complement and enhance their own studies. Many groups have set up databases of expression data, ranging from large repositories, which are designed to comprehensively capture all published data, through to more specialized databases. The public repositories, such as ArrayExpress at the European Bioinformatics Institute contain complete datasets in raw format in addition to processed data, whilst the specialist databases tend to provide downstream analysis of normalized data from more focused studies and data sources. Here we provide a guide to the use of these public microarray resources. PMID:18629145

  4. Electrical Interconnections Through CMOS Wafers

    Rasmussen, Frank Engel

    2003-01-01

    Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis descri...

  5. CMOS MEMS Fabrication Technologies and Devices

    Hongwei Qu

    2016-01-01

    Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

  6. Research and Development of Monolithic Active Pixel Sensors for the Detection of the Elementary Particles; Recherche et developpement de capteurs actifs monolithiques CMOS pour la detection de particules elementaires

    Li, Y

    2007-09-15

    In order to develop high spatial resolution and readout speed vertex detectors for the future International Linear Collider (ILC), fast CMOS Monolithic Active Pixel Sensors (MAPS) are studied on this work. Two prototypes of MAPS, MIMOSA 8 and MIMOSA 16, based on the same micro-electronic architecture were developed in CMOS processes with different thickness of epitaxial layer. The size of pixel matrix is 32 x 128: 8 columns of the pixel array are readout directly with analog outputs and the other 24 columns are connected to the column level auto-zero discriminators. The Correlated Double Sampling (CDS) structures are successfully implemented inside pixel and discriminator. The photo diode type pixels with different diode sizes are used in these prototypes. With a {sup 55}Fe X-ray radioactive source, the important parameters, such as Temporal Noise, Fixed Pattern Noise (FPN), Signal-to-Noise Ratio (SNR), Charge-to-Voltage conversion Factor (CVF) and Charge Collection Efficiency (CCE), are studied as function of readout speed and diode size. For MIMOSA 8, the effect of fast neutrons irradiation is also. Two beam tests campaigns were made: at DESY with a 5 GeV electrons beam and at CERN with a 180 GeV pions beam. Detection Efficiency and Spatial Resolution are studied in function of the discriminator threshold. For these two parameters, the influences of diode size and SNR of the central pixel of a cluster are also discussed. In order to improve the spatial resolution of the digital outputs, a very compact (25 {mu}m x 1 mm) and low consumption (300 {mu}W) column level ADC is designed in AMS 0.35 {mu}m OPTO process. Based on successive approximation architecture, the auto-offset cancellation structure is integrated. A new column level auto-zero discriminator using static latch is also designed. (author)

  7. Time-course microarrays reveal early activation of the immune transcriptome and adipokine dysregulation leads to fibrosis in visceral adipose depots during diet-induced obesity

    Kwon Eun-Young

    2012-09-01

    Full Text Available Abstract Background Visceral white adipose tissue (WAT hypertrophy, adipokine production, inflammation and fibrosis are strongly associated with obesity, but the time-course of these changes in-vivo are not fully understood. Therefore, the aim of this study was to establish the time-course of changes in adipocyte morphology, adipokines and the global transcriptional landscape in visceral WAT during the development of diet-induced obesity. Results C57BL/6 J mice were fed a high-fat diet (HFD or normal diet (ND and sacrificed at 8 time-points over 24 weeks. Excessive fat accumulation was evident in visceral WAT depots (Epidydimal, Perirenal, Retroperitoneum, Mesentery after 2–4 weeks. Fibrillar collagen accumulation was evident in epidydimal adipocytes at 24 weeks. Plasma adipokines, leptin, resistin and adipsin, increased early and time-dependently, while adiponectin decreased late after 20 weeks. Only plasma leptin and adiponectin levels were associated with their respective mRNA levels in visceral WAT. Time-course microarrays revealed early and sustained activation of the immune transcriptome in epididymal and mesenteric depots. Up-regulated inflammatory genes included pro-inflammatory cytokines, chemokines (Tnf, Il1rn, Saa3, Emr1, Adam8, Itgam, Ccl2, 3, 4, 6, 7 and 9 and their upstream signalling pathway genes (multiple Toll-like receptors, Irf5 and Cd14. Early changes also occurred in fibrosis, extracellular matrix, collagen and cathepsin related-genes, but histological fibrosis was only visible in the later stages. Conclusions In diet-induced obesity, early activation of TLR-mediated inflammatory signalling cascades by CD antigen genes, leads to increased expression of pro-inflammatory cytokines and chemokines, resulting in chronic low-grade inflammation. Early changes in collagen genes may trigger the accumulation of ECM components, promoting fibrosis in the later stages of diet-induced obesity. New therapeutic approaches

  8. Planar pixel sensors in commercial CMOS technologies

    For the upgrade of the ATLAS experiment at the high luminosity LHC, an all-silicon tracker is foreseen to cope with the increased rate and radiation levels. Pixel and strip detectors will have to cover an area of up to 200m2. To produce modules in high number at reduced costs, new sensor and bonding technologies have to be investigated. Commercial CMOS technologies on high resistive substrates can provide significant advantages in this direction. They offer cost effective, large volume sensor production. In addition to this, production is done on 8'' wafers allowing wafer-to-wafer bonding to the electronics, an interconnection technology substantially cheaper than the bump bonding process used for hybrid pixel detectors at the LHC. Both active and passive n-in-p pixel sensor prototypes have been submitted in a 150 nm CMOS technology on a 2kΩ cm substrate. The passive sensor design will be used to characterize sensor properties and to investigate wafer-to-wafer bonding technologies. This first prototype is made of a matrix of 36 x 16 pixels of size compatible with the FE-I4 readout chip (i.e. 50 μm x 250 μm). Results from lab characterization of this first submission are shown together with TCAD simulations. Work towards a full size FE-I4 sensor for wafer-to-wafer bonding is discussed.

  9. A novel colour-sensitive CMOS detector

    Langfelder, G.; Longoni, A.; Zaraga, F.

    2009-10-01

    A novel colour-sensitive semiconductor detector is proposed. The device (named Transverse Field Detector (TFD)) can be used to measure the colour of the incident light without any colour filter. The device is completely compatible with standard CMOS processes and is suitable to be integrated in a pixel array for imaging purposes. The working principle is based on the capability of this device to collect at different superficial junctions the carriers, generated at different depths, by means of suitable transverse electric fields. The transverse components of the electric field are generated inside the depleted region by a suitable bias of the superficial junctions. Thanks to the differences in the light absorption coefficients at different wavelengths, the device performs colour separation. Among the advantages of this approach are the capability of an active tuning of the pixel colour response, which can be obtained just by changing the biasing values of collecting junctions, and foreseen higher colour fidelity, thanks to the easy extension to four colour pixels. First test structures of three colours TFD pixels were designed and built in a standard CMOS 90 nm technology. Operative principles of the device and first experimental results are presented.

  10. Planar CMOS analog SiPMs: design, modeling, and characterization

    Zou, Yu; Villa, Federica; Bronzi, Danilo; Tisa, Simone; Tosi, Alberto; Zappa, Franco

    2015-11-01

    Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 106, 13.2 × 106, and 15.0 × 106, respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing.

  11. The use of microarrays in microbial ecology

    Andersen, G.L.; He, Z.; DeSantis, T.Z.; Brodie, E.L.; Zhou, J.

    2009-09-15

    Microarrays have proven to be a useful and high-throughput method to provide targeted DNA sequence information for up to many thousands of specific genetic regions in a single test. A microarray consists of multiple DNA oligonucleotide probes that, under high stringency conditions, hybridize only to specific complementary nucleic acid sequences (targets). A fluorescent signal indicates the presence and, in many cases, the abundance of genetic regions of interest. In this chapter we will look at how microarrays are used in microbial ecology, especially with the recent increase in microbial community DNA sequence data. Of particular interest to microbial ecologists, phylogenetic microarrays are used for the analysis of phylotypes in a community and functional gene arrays are used for the analysis of functional genes, and, by inference, phylotypes in environmental samples. A phylogenetic microarray that has been developed by the Andersen laboratory, the PhyloChip, will be discussed as an example of a microarray that targets the known diversity within the 16S rRNA gene to determine microbial community composition. Using multiple, confirmatory probes to increase the confidence of detection and a mismatch probe for every perfect match probe to minimize the effect of cross-hybridization by non-target regions, the PhyloChip is able to simultaneously identify any of thousands of taxa present in an environmental sample. The PhyloChip is shown to reveal greater diversity within a community than rRNA gene sequencing due to the placement of the entire gene product on the microarray compared with the analysis of up to thousands of individual molecules by traditional sequencing methods. A functional gene array that has been developed by the Zhou laboratory, the GeoChip, will be discussed as an example of a microarray that dynamically identifies functional activities of multiple members within a community. The recent version of GeoChip contains more than 24,000 50mer

  12. Carbohydrate Microarrays in Plant Science

    Fangel, Jonatan Ulrik; Pedersen, H.L.; Vidal-Melgosa, S.;

    2012-01-01

    Almost all plant cells are surrounded by glycan-rich cell walls, which form much of the plant body and collectively are the largest source of biomass on earth. Plants use polysaccharides for support, defense, signaling, cell adhesion, and as energy storage, and many plant glycans are also important...... industrially and nutritionally. Understanding the biological roles of plant glycans and the effective exploitation of their useful properties requires a detailed understanding of their structures, occurrence, and molecular interactions. Microarray technology has revolutionized the massively high...... plant research and can be used to map glycan populations across large numbers of samples to screen antibodies, carbohydrate binding proteins, and carbohydrate binding modules and to investigate enzyme activities....

  13. CMOS test and evaluation a physical perspective

    Bhushan, Manjul

    2015-01-01

    This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

  14. Compressive Sensing DNA Microarrays

    Sheikh Mona A

    2009-01-01

    Full Text Available Compressive sensing microarrays (CSMs are DNA-based sensors that operate using group testing and compressive sensing (CS principles. In contrast to conventional DNA microarrays, in which each genetic sensor is designed to respond to a single target, in a CSM, each sensor responds to a set of targets. We study the problem of designing CSMs that simultaneously account for both the constraints from CS theory and the biochemistry of probe-target DNA hybridization. An appropriate cross-hybridization model is proposed for CSMs, and several methods are developed for probe design and CS signal recovery based on the new model. Lab experiments suggest that in order to achieve accurate hybridization profiling, consensus probe sequences are required to have sequence homology of at least 80% with all targets to be detected. Furthermore, out-of-equilibrium datasets are usually as accurate as those obtained from equilibrium conditions. Consequently, one can use CSMs in applications in which only short hybridization times are allowed.

  15. Fabrication of CMOS image sensors

    Malinovich, Yacov; Koltin, Ephie; Choen, David; Shkuri, Moshe; Ben-Simon, Meir

    1999-04-01

    In order to provide its customers with sub-micron CMOS fabrication solutions for imaging applications, Tower Semiconductor initiated a project to characterize the optical parameters of Tower's 0.5-micron process. A special characterization test chip was processed using the TS50 process. The results confirmed a high quality process for optical applications. Perhaps the most important result is the process' very low dark current, of 30-50 pA/cm2, using the entire window of process. This very low dark current characteristic was confirmed for a variety of pixel architectures. Additionally, we have succeeded to reduce and virtually eliminate the white spots on large sensor arrays. As a foundry Tower needs to support fabrication of many different imaging products. Therefore we have developed a fabrication methodology that is adjusted to the special needs of optical applications. In order to establish in-line process monitoring of the optical parameters, Tower places a scribe line optical test chip that enables wafer level measurements of the most important parameters, ensuring the optical quality and repeatability of the process. We have developed complementary capabilities like in house deposition of color filter and fabrication of very large are dice using sub-micron CMOS technologies. Shellcase and Tower are currently developing a new CMOS image sensor optical package.

  16. A Surface Micromachined CMOS MEMS Humidity Sensor

    Jian-Qiu Huang; Fei Li; Min Zhao; Kai Wang

    2015-01-01

    This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system) piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the piezoresistive humidity sensor. Compared with a bulk micromachined humidity sensor, the machining precision and the sizes of the surface micromachined humidity sensor were both improved. The package and test systems of the sensor were designed. A...

  17. Datenakquisitionsentwicklung und Untergrundstudien für den Weltraumdetektor AMS-02 und den CMOS-Detektor MIMOSA-V

    Schmanau, Mike

    2008-01-01

    This thesis deals with the development of space qualified electronics, detector simulations and realtime data acquisition software. The covered detector designs reach from the AMS-02 experiment, as a large scale multi purpose detector with several sub-detectors for cosmic particle research, to the small single type CMOS-detector MIMOSA-V for autoradiography of micro-arrays within the REGINS project. The presented background study focuses on problems with the simulation of diffractive scattering.

  18. Microelectronic test structures for CMOS technology

    Ketchen, Mark B

    2011-01-01

    Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

  19. Absorbed dose by a CMOS in radiotherapy

    Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2011-10-15

    Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

  20. DNA Microarray-Based Diagnostics.

    Marzancola, Mahsa Gharibi; Sedighi, Abootaleb; Li, Paul C H

    2016-01-01

    The DNA microarray technology is currently a useful biomedical tool which has been developed for a variety of diagnostic applications. However, the development pathway has not been smooth and the technology has faced some challenges. The reliability of the microarray data and also the clinical utility of the results in the early days were criticized. These criticisms added to the severe competition from other techniques, such as next-generation sequencing (NGS), impacting the growth of microarray-based tests in the molecular diagnostic market.Thanks to the advances in the underlying technologies as well as the tremendous effort offered by the research community and commercial vendors, these challenges have mostly been addressed. Nowadays, the microarray platform has achieved sufficient standardization and method validation as well as efficient probe printing, liquid handling and signal visualization. Integration of various steps of the microarray assay into a harmonized and miniaturized handheld lab-on-a-chip (LOC) device has been a goal for the microarray community. In this respect, notable progress has been achieved in coupling the DNA microarray with the liquid manipulation microsystem as well as the supporting subsystem that will generate the stand-alone LOC device.In this chapter, we discuss the major challenges that microarray technology has faced in its almost two decades of development and also describe the solutions to overcome the challenges. In addition, we review the advancements of the technology, especially the progress toward developing the LOC devices for DNA diagnostic applications. PMID:26614075

  1. X-ray Performance Evaluation of the Dexela CMOS APS X-ray Detector Using Monochromatic Synchrotron Radiation in the Mammographic Energy Range

    Konstantinidis, A. C.; Szafraniec, M. B.; Rigon, L.; Tromba, G.; Dreossi, D.; Sodini, N.; Liaparinos, P. F.; Naday, S.; Gunn, S.; McArthur, A.; Speller, R.D.; Olivo, A.

    2013-01-01

    Digital detectors based on complementary metaloxide-semiconductors (CMOS) active pixel sensor (APS) technology have been introduced recently in many scientific applications. This work is focused on the X-ray performance evaluation of a novel CMOS APS detector in low energy medical imaging applications using monochromatic synchrotron radiation (i.e., 17–35 keV), which also allows studying how the performance varies with energy. The CMOS sensor was coupled to a Thallium-activated structured ces...

  2. Sinusoidal Frequency Doublers Circuit With Low Voltage + 1.5 Volt CMOS Inverter

    Bancha Burapattanasiri

    2009-01-01

    This paper is present sinusoidal frequency doublers circuit with low voltage + 1.5 volt CMOS inverter. Main structure of circuit has three parts that is CMOS inverter circuit, differential amplifier circuit, and square root circuit. This circuit has designed to receive input voltage and give output voltage use few MOS transistor, easy to understand, non complex of circuit, high precision, low error and low power. The Simulation of circuit has MOS transistor functional in active and saturation...

  3. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  4. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    Benoit, M.; Bilbao de Mendizabal, J.; Casse, G.; Chen, H.; Chen, K.; Di Bello, F. A.; Ferrere, D.; Golling, T.; Gonzalez-Sevilla, S.; Iacobucci, G.; Lanni, F.; Liu, H.; Meloni, F.; Meng, L.; Miucci, A.; Muenstermann, D.; Nessi, M.; Perić, I.; Rimoldi, M.; Ristic, B.; Barrero Pinto, M. Vicente; Vossebeld, J.; Weber, M.; Wu, W.; Xu, L.

    2016-07-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  5. Evaluation of toxicity of the mycotoxin citrinin using yeast ORF DNA microarray and Oligo DNA microarray

    Nobumasa Hitoshi

    2007-04-01

    Full Text Available Abstract Background Mycotoxins are fungal secondary metabolites commonly present in feed and food, and are widely regarded as hazardous contaminants. Citrinin, one of the very well known mycotoxins that was first isolated from Penicillium citrinum, is produced by more than 10 kinds of fungi, and is possibly spread all over the world. However, the information on the action mechanism of the toxin is limited. Thus, we investigated the citrinin-induced genomic response for evaluating its toxicity. Results Citrinin inhibited growth of yeast cells at a concentration higher than 100 ppm. We monitored the citrinin-induced mRNA expression profiles in yeast using the ORF DNA microarray and Oligo DNA microarray, and the expression profiles were compared with those of the other stress-inducing agents. Results obtained from both microarray experiments clustered together, but were different from those of the mycotoxin patulin. The oxidative stress response genes – AADs, FLR1, OYE3, GRE2, and MET17 – were significantly induced. In the functional category, expression of genes involved in "metabolism", "cell rescue, defense and virulence", and "energy" were significantly activated. In the category of "metabolism", genes involved in the glutathione synthesis pathway were activated, and in the category of "cell rescue, defense and virulence", the ABC transporter genes were induced. To alleviate the induced stress, these cells might pump out the citrinin after modification with glutathione. While, the citrinin treatment did not induce the genes involved in the DNA repair. Conclusion Results from both microarray studies suggest that citrinin treatment induced oxidative stress in yeast cells. The genotoxicity was less severe than the patulin, suggesting that citrinin is less toxic than patulin. The reproducibility of the expression profiles was much better with the Oligo DNA microarray. However, the Oligo DNA microarray did not completely overcome cross

  6. JFET-CMOS microstrip front-end

    While the CMOS version of the front-end chip developed for the microstrip vertex detector of the Aleph experiment is ready to go into operation, a new development is being carried on to achieve a reduction in noise. The improvement is related to the use of a JFET-CMOS chip design which is described in the present paper. (orig.)

  7. CMOS Active Pixel Sensors Based Detector for High-Energy Particle Tracking%基于CMOS集成有源传感器的新型高能物理粒子轨迹追踪器

    李琰; Yavuz De(g)erli; 纪震

    2009-01-01

    本文研究了一个采用标准0.35μm CMOS工艺制造的新型高能物理粒子轨迹追踪器.这个新型的追踪器运用CMOS有源像素传感器技术(CMOS Monolithic Active Pixel Sensors,MAPS)将信号的探测与处理电路集成在一起,在像素的内部实现了相关双次采样操作(Correlated Doubled Sampling,CDS).实验芯片包含一个128行×32列的像素矩阵,其中,像素的大小为25×25μm2.通过采用放射源55Fe的测定,得到像素的等效输入随机噪声(Temporal Noise)仅为12个电子而固定噪声(Fixed Pattern Noise,FPN)仅为4个电子.传感器的电荷-电压转换系数(Charge-to-Voltage conversion Factor,CVF)为60μV/e-.测试中,芯片的信号读取速度达到了12μs/帧.

  8. Functional assessment of time course microarray data

    Dopazo Joaquín; García-García Francisco; Tarazona Sonia; Sebastián Patricia; Nueda María; Ferrer Alberto; Conesa Ana

    2009-01-01

    Abstract Motivation Time-course microarray experiments study the progress of gene expression along time across one or several experimental conditions. Most developed analysis methods focus on the clustering or the differential expression analysis of genes and do not integrate functional information. The assessment of the functional aspects of time-course transcriptomics data requires the use of approaches that exploit the activation dynamics of the functional categories to where genes are ann...

  9. Transcriptome Analysis of Zebrafish Embryogenesis Using Microarrays

    Mathavan, Sinnakaruppan; Lee, Serene G. P.; Mak, Alicia; Lance D. Miller; Murthy, Karuturi Radha Krishna; Govindarajan, Kunde R; Tong, Yan; Wu, Yi Lian; Lam, Siew Hong; Yang, Henry; Ruan, Yijun; Korzh, Vladimir; Gong, Zhiyuan; Liu, Edison T; Lufkin, Thomas

    2005-01-01

    Zebrafish (Danio rerio) is a well-recognized model for the study of vertebrate developmental genetics, yet at the same time little is known about the transcriptional events that underlie zebrafish embryogenesis. Here we have employed microarray analysis to study the temporal activity of developmentally regulated genes during zebrafish embryogenesis. Transcriptome analysis at 12 different embryonic time points covering five different developmental stages (maternal, blastula, gastrula, segmenta...

  10. Optoelectronic circuits in nanometer CMOS technology

    Atef, Mohamed

    2016-01-01

    This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

  11. Protein Microarray On-Demand: A Novel Protein Microarray System

    Chatterjee, Deb K.; Sitaraman, Kalavathy; Baptista, Cassio; Hartley, James; Hill, Thomas M.; David J. Munroe

    2008-01-01

    We describe a novel, simple and low-cost protein microarray strategy wherein the microarrays are generated by printing expression ready plasmid DNAs onto slides that can be converted into protein arrays on-demand. The printed expression plasmids serve dual purposes as they not only direct the synthesis of the protein of interest; they also serve to capture the newly synthesized proteins through a high affinity DNA-protein interaction. To accomplish this we have exploited the high-affinity bin...

  12. Design and Fabrication of Vertically-Integrated CMOS Image Sensors

    Orit Skorka; Dileepan Joseph

    2011-01-01

    Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensor...

  13. Microarray Scanner for Fluorescence Detection

    2003-01-01

    A novel pseudo confocal microarray scanner is introduced, in which one dimension scanning is performed by a galvanometer optical scanner and a telecentric objective, another dimension scanning is performed by a stepping motor.

  14. Microarrayed Materials for Stem Cells

    Ying Mei

    2012-01-01

    Stem cells hold remarkable promise for applications in disease modeling, cancer therapy, and regenerative medicine. Despite the significant progress made during the last decade, designing materials to control stem cell fate remains challenging. As an alternative, materials microarray technology has received great attention because it allows for high throughput materials synthesis and screening at a reasonable cost. Here, we discuss recent developments in materials microarray technology and th...

  15. Recent advances of protein microarrays

    Hultschig, Claus; Kreutzberger, Jürgen; Seitz, Harald; Konthur, Zoltán; Büssow, Konrad; Lehrach, Hans

    2006-01-01

    Technological innovations and novel applications have greatly advanced the field of protein microarrays. Over the past two years, different types of protein microarrays have been used for serum profiling, protein abundance determinations, and identification of proteins that bind DNA or small compounds. However, considerable development is still required to ensure common quality standards and to establish large content repertoires. Here, we summarize applications available to date and discuss ...

  16. Carbon Nanotube Integration with a CMOS Process

    Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

    2010-01-01

    This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

  17. Batch Processing of CMOS Compatible Feedthroughs

    Rasmussen, F.E.; Heschel, M.; Hansen, Ole

    2003-01-01

    process scheme allows for post processing of feedthroughs in any kind of fully processed CMOS wafer. The fabrication of the electrical feedthroughs is based on wet etching of through-holes, low temperature deposition of dielectric material, and electrodeposition of photoresist and feedthrough metal. The...... feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...

  18. Carbon Nanotube Integration with a CMOS Process

    Maximiliano S. Perez

    2010-04-01

    Full Text Available This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.

  19. Carbohydrate Microarrays in Plant Science

    Fangel, Jonatan Ulrik; Pedersen, H.L.; Vidal-Melgosa, S.; Ahl, Louise Isager; Salmean, A.A.; Egelund, Jack; Rydahl, Maja Gro; Clausen, M.H.; Willats, William George Tycho

    2012-01-01

    Almost all plant cells are surrounded by glycan-rich cell walls, which form much of the plant body and collectively are the largest source of biomass on earth. Plants use polysaccharides for support, defense, signaling, cell adhesion, and as energy storage, and many plant glycans are also importa...... plant research and can be used to map glycan populations across large numbers of samples to screen antibodies, carbohydrate binding proteins, and carbohydrate binding modules and to investigate enzyme activities.......Almost all plant cells are surrounded by glycan-rich cell walls, which form much of the plant body and collectively are the largest source of biomass on earth. Plants use polysaccharides for support, defense, signaling, cell adhesion, and as energy storage, and many plant glycans are also important...... industrially and nutritionally. Understanding the biological roles of plant glycans and the effective exploitation of their useful properties requires a detailed understanding of their structures, occurrence, and molecular interactions. Microarray technology has revolutionized the massively high...

  20. Improved Space Object Orbit Determination Using CMOS Detectors

    Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

    2014-09-01

    CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario

  1. First result on biased CMOS MAPs-on-diamond devices

    Recently a new type of device, the MAPS-on-diamond, obtained bonding a thinned to 25 μm CMOS Monolithic Active Pixel Sensor to a standard 500 μm pCVD diamond substrate, has been proposed and fabricated, allowing a highly segmented readout (10×10 μm pixel size) of the signal produced in the diamond substrate. The bonding between the two materials has been obtained using a new laser technique to deliver the needed energy at the interface. A biasing scheme has been adopted to polarize the diamond substrate to allow the charge transport inside the diamond without disrupting the functionalities of the CMOS Monolithic Active Pixel Sensor. The main concept of this class of devices is the capability of the charges generated in the diamond by ionizing radiation to cross the silicon–diamond interface and to be collected by the MAPS photodiodes. In this work we demonstrate that such passage occurs and measure its overall efficiency. This study has been carried out first calibrating the CMOS MAPS with monochromatic X-rays, and then testing the device with charged particles (electrons) either with and without biasing the diamond substrate, to compare the amount of signal collected

  2. CMOS-sensors for energy-resolved X-ray imaging

    Doering, D.; Amar-Youcef, S.; Baudot, J.; Deveaux, M.; Dulinski, W.; Kachel, M.; Linnik, B.; Müntz, C.; Stroth, Joachim

    2016-01-01

    Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ``color sensitive" X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors.

  3. CMOS-sensors for energy-resolved X-ray imaging

    Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ''color sensitive' X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors

  4. Ultralow-loss CMOS copper plasmonic waveguides

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.; Volkov, Valentyn S.

    2016-01-01

    microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  5. The Stanford Tissue Microarray Database.

    Marinelli, Robert J; Montgomery, Kelli; Liu, Chih Long; Shah, Nigam H; Prapong, Wijan; Nitzberg, Michael; Zachariah, Zachariah K; Sherlock, Gavin J; Natkunam, Yasodha; West, Robert B; van de Rijn, Matt; Brown, Patrick O; Ball, Catherine A

    2008-01-01

    The Stanford Tissue Microarray Database (TMAD; http://tma.stanford.edu) is a public resource for disseminating annotated tissue images and associated expression data. Stanford University pathologists, researchers and their collaborators worldwide use TMAD for designing, viewing, scoring and analyzing their tissue microarrays. The use of tissue microarrays allows hundreds of human tissue cores to be simultaneously probed by antibodies to detect protein abundance (Immunohistochemistry; IHC), or by labeled nucleic acids (in situ hybridization; ISH) to detect transcript abundance. TMAD archives multi-wavelength fluorescence and bright-field images of tissue microarrays for scoring and analysis. As of July 2007, TMAD contained 205 161 images archiving 349 distinct probes on 1488 tissue microarray slides. Of these, 31 306 images for 68 probes on 125 slides have been released to the public. To date, 12 publications have been based on these raw public data. TMAD incorporates the NCI Thesaurus ontology for searching tissues in the cancer domain. Image processing researchers can extract images and scores for training and testing classification algorithms. The production server uses the Apache HTTP Server, Oracle Database and Perl application code. Source code is available to interested researchers under a no-cost license. PMID:17989087

  6. Device Considerations for Nanophotonic CMOS Global Interconnects

    Manipatruni, Sasikanth; Lipson, Michal; Young, Ian A.

    2012-01-01

    We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, optical insertion losses, extinction ratio and bit error rates. Using CMOS with integrated nanophotonics as an example platform, we derive the energy/bit, linear and areal bandwidth density ...

  7. Terahertz Circuits and Systems in CMOS

    Sherry, Hani Mahmoud

    2014-01-01

    This PhD dissertation presents and analyses various room-temperature circuits for Terahertz detection and generation implemented in CMOS 65nm bulk and 28nm FDSOI throughout the course of the thesis. The work discusses the methodology of design and feasibility of fully-integrated focal-plane arrays of detectors in CMOS technologies as potential commercial solutions for various THz applications. The interesting characteristics of the Terahertz portion (300GHz-3THz) of the Electromagnetic sp...

  8. On evolution of CMOS image sensors

    Choubey, Bhaskar; Gouveia, Luiz

    2014-01-01

    CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the...

  9. Fully depleted, thick, monolithic CMOS pixels with high quantum efficiency

    The Centre for Electronic Imaging (CEI) has an active programme of evaluating and designing Complementary Metal-Oxide Semiconductor (CMOS) image sensors with high quantum efficiency, for applications in near-infrared and X-ray photon detection. This paper describes the performance characterisation of CMOS devices made on a high resistivity 50 μ m thick p-type substrate with a particular focus on determining the depletion depth and the quantum efficiency. The test devices contain 8 × 8 pixel arrays using CCD-style charge collection, which are manufactured in a low voltage CMOS process by ESPROS Photonics Corporation (EPC). Measurements include determining under which operating conditions the devices become fully depleted. By projecting a spot using a microscope optic and a LED and biasing the devices over a range of voltages, the depletion depth will change, causing the amount of charge collected in the projected spot to change. We determine if the device is fully depleted by measuring the signal collected from the projected spot. The analysis of spot size and shape is still under development

  10. Phenotypic MicroRNA Microarrays

    Veronica Soloveva; Michel Liuzzi; Jin Yeop Kim; Hi Chul Kim; Jin Yeong Heo; Yong-Jun Kwon

    2013-01-01

    Microarray technology has become a very popular approach in cases where multiple experiments need to be conducted repeatedly or done with a variety of samples. In our lab, we are applying our high density spots microarray approach to microscopy visualization of the effects of transiently introduced siRNA or cDNA on cellular morphology or phenotype. In this publication, we are discussing the possibility of using this micro-scale high throughput process to study the role of microRNAs in the bio...

  11. Heavy ion effect on MOS and CMOS structures on insulator (CMOS/SOI)

    The effects of cosmic ions on Metal-Oxide-Semiconductor structures are described. Measurements done at different energies on MOS capacitors and CMOS on insulator transistors (CMOS/SOI) show a substrate funneling which gives rise to a transient current on device electrodes. The pulse amplitude is simply related to capacitor bias, lifetime of substrate minority carriers and range of the impinging ion

  12. Design of a covalently bonded glycosphingolipid microarray

    Arigi, Emma; Blixt, Klas Ola; Buschard, Karsten;

    2012-01-01

    agglutinin, a monoclonal antibody to sulfatide, Sulph 1; and a polyclonal antiserum reactive to asialo-G(M2)). Preliminary evaluation of the method indicated successful immobilization of the GSLs, and selective binding of test probes. The potential utility of this methodology for designing covalent...... 2-mercaptoethylamine, was also tested. Underivatized or linker-derivatized lyso-GSL were then immobilized on N-hydroxysuccinimide- or epoxide-activated glass microarray slides and probed with carbohydrate binding proteins of known or partially known specificities (i.e., cholera toxin B-chain; peanut...

  13. Microfluidic microarray systems and methods thereof

    West, Jay A. A.; Hukari, Kyle W.; Hux, Gary A.

    2009-04-28

    Disclosed are systems that include a manifold in fluid communication with a microfluidic chip having a microarray, an illuminator, and a detector in optical communication with the microarray. Methods for using these systems for biological detection are also disclosed.

  14. Microarray Developed on Plastic Substrates.

    Bañuls, María-José; Morais, Sergi B; Tortajada-Genaro, Luis A; Maquieira, Ángel

    2016-01-01

    There is a huge potential interest to use synthetic polymers as versatile solid supports for analytical microarraying. Chemical modification of polycarbonate (PC) for covalent immobilization of probes, micro-printing of protein or nucleic acid probes, development of indirect immunoassay, and development of hybridization protocols are described and discussed. PMID:26614067

  15. Comparison of gene expression microarray data with count-based RNA measurements informs microarray interpretation

    Richard, Arianne C.; Lyons, Paul A.; Peters, James E.; Biasci, Daniele; Flint, Shaun M; James C Lee; McKinney, Eoin F; Siegel, Richard M.; Smith, Kenneth GC

    2014-01-01

    Background Although numerous investigations have compared gene expression microarray platforms, preprocessing methods and batch correction algorithms using constructed spike-in or dilution datasets, there remains a paucity of studies examining the properties of microarray data using diverse biological samples. Most microarray experiments seek to identify subtle differences between samples with variable background noise, a scenario poorly represented by constructed datasets. Thus, microarray u...

  16. Direct calibration of PICKY-designed microarrays

    Ronald Pamela C

    2009-10-01

    Full Text Available Abstract Background Few microarrays have been quantitatively calibrated to identify optimal hybridization conditions because it is difficult to precisely determine the hybridization characteristics of a microarray using biologically variable cDNA samples. Results Using synthesized samples with known concentrations of specific oligonucleotides, a series of microarray experiments was conducted to evaluate microarrays designed by PICKY, an oligo microarray design software tool, and to test a direct microarray calibration method based on the PICKY-predicted, thermodynamically closest nontarget information. The complete set of microarray experiment results is archived in the GEO database with series accession number GSE14717. Additional data files and Perl programs described in this paper can be obtained from the website http://www.complex.iastate.edu under the PICKY Download area. Conclusion PICKY-designed microarray probes are highly reliable over a wide range of hybridization temperatures and sample concentrations. The microarray calibration method reported here allows researchers to experimentally optimize their hybridization conditions. Because this method is straightforward, uses existing microarrays and relatively inexpensive synthesized samples, it can be used by any lab that uses microarrays designed by PICKY. In addition, other microarrays can be reanalyzed by PICKY to obtain the thermodynamically closest nontarget information for calibration.

  17. Development of an electroless post-processing technique for depositing gold as electrode material on CMOS devices

    Berdondini, Luca; van der Wal, Peter D.; De Rooij, Nicolaas F; Koudelka-Hep, Milena

    2010-01-01

    The limited electrode density and thus, the limited spatial resolution of substrate-integrated microelectrodes arrays (MEAs) used in in-vitro electrophysiology are currently considered as the main constraints of this technique. By taking advantage of the commercially available complementary metal oxide semiconductor (CMOS) standard technology, high density miroelectrode arrays on large active areas could be realized. However, the aluminum alloy used in CMOS as the metallic layer shows poor el...

  18. Characterization and reliability of CMOS microstructures

    Fedder, Gary K.; Blanton, Ronald D. S.

    1999-08-01

    This paper provides an overview of high-aspect-ratio CMOS micromachining, focusing on materials characterization, reliability, and fault analysis. Composite microstrutural beam widths and gaps down to 1.2 micrometers are etched out of conventional CMOS dielectric, aluminum, and gate-polysilicon thin films using post-CMOS dry etching for both structural sidewall definition and for release from the substrate. Differences in stress between the multiple metal and dielectric layers cause vertical stress gradients and curl, while misalignment between layers causes lateral stress gradients and curl. Cracking is induced in a resonant fatigue structures at 620 MPa of repetitive stress after over 50 million cycles. Beams have withstood over 1.3 billion cycles at 124 MPa stress levels induced by electrostatic actuation. Failures due to process defects are classified according to the geometrical features of the defective structures. Relative probability of occurrence of each defect type is extracted from the process simulation results.

  19. Delay estimation for CMOS functional cells

    Madsen, Jan

    1991-01-01

    Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis on arbitr...... arbitrary CMOS functional cells using the proposed delay model, is presented. Both model and algorithms have been implemented as a part of a cell compiler (CELLO) working in an experimental silicon compiler environment.......Presents a new RC tree network model for delay estimation of CMOS functional cells. The model is able to reflect topological changes within a cell, which is of particular interest when doing performance driven layout synthesis. Further, a set of algorithms to perform worst case analysis on...

  20. A Standard CMOS Humidity Sensor without Post-Processing

    Oleg Nizhnik; Kazusuke Maenaka; Kohei Higuchi

    2011-01-01

    A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  1. Noise in sub-micron CMOS image sensors

    Wang, X.

    2008-01-01

    CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing the noise generated in the CMOS image sensor pixels.

  2. Parasitic-aware optimization of CMOS RF circuits

    Allstot, David J; Choi, Kiyong

    2007-01-01

    Dedication. Contributing Authors. Preface. Part I: Background on Parasitic-Aware Optimization. 1: Introduction. 1. Introduction. 2. Overview of Wireless Transceivers. 3. Outline of the Book. 2: Modeling of On-Chip Passive and Active Components. 1. Monolithic Inductors. 2. Monolithic Varactors. 3. MOS Transistors. 3: Parasitic-Aware Optimization. 1. Gradient Decent Optimization. 2. Simulated Annealing. 3. Simulated Annealing with Tunneling Process. 4. Genetic Algorithm (GA). 5. Particle Swarm Optimization (PSO). 6. Post PVT Variation Optimization. Part II: Optimization of CMOS RF Circuits. 4: O

  3. Measurements with a CMOS pixel sensor in magnetic fields

    Boer, W. de; Bartsch, V.; Bol, J.; Dierlamm, A.; Grigoriev, E.; Hauler, F.; Herz, O.; Jungermann, L. E-mail: levin.jungermann@cern.ch; Koppenhoefer, M.; Sopczak, A.; Schneider, Th

    2002-07-11

    CMOS technique, which is the standard process used by most of the semiconductor factories worldwide, allows the production of both cheap and highly integrated sensors. The prototypes MIMOSA -I and MIMOSA-II were designed by the IReS-LEPSI collaboration in order to investigate the potential of this new technique for charged particle tracking (Design and Testing of Monolithic Active Pixel Sensors for Charged Particle Tracking, LEPSI, IN2P3, Strasbourg, France). For this purpose it is necessary to study the effects of magnetic fields as they appear in high-energy physics on these sensors.

  4. Scaling CMOS devices through alternative structures

    2001-01-01

    The conventional wisdom holds that CMOS devices cannot be scaled much further from where they are today because of several device physics limitations such as the large tunneling current in very thin gate dielectrics. It is shown that alternative device structures can allow CMOS transistors to scale by another 20 times. That is as large a factor of scaling as what the semiconductor industry accomplished in the past 25 years. There will be many opportunities and challenges in finding novel device structures and new processing techniques, and in understanding the physics of future devices.

  5. Modeling of Amperometric Immunosensor for CMOS Integration

    Ce Li; Haigang Yang; Shanhong Xia; Chao Bian

    2006-01-01

    A circuit model of the Amperometric immunosensor for use in the biosensor system-on-chip simulation is proposed in this paper. The model parameters are extracted with several methods and verified by MATLAB and SPICE simulation. A CMOS potentiostat circuit required for conditioning the Amperometric immunosensor is also included in the circuit model. The mean square error norm of the simulated curve against the measured one is 8.65 × 10-17. The whole circuit has been fabricated in a 0.35am CMOS process.

  6. Device Considerations for Nanophotonic CMOS Global Interconnects

    Manipatruni, Sasikanth; Young, Ian A

    2012-01-01

    We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/bit interconnects including tuning power, serialization-deserialization energy, and optical insertion losses. Using silicon photonics as an example platform, we derive the energy/bit, linear and areal bandwidth density of optical interconnects. We also derive the targets for device performance which indicate the need for continued improvements in mode volume (40 Gb/s), tuning power ( 6 channels). We also contrast the figures of merits for CMOS electrical interconnects with nanophotonic interconnects.

  7. Radiation-hardened bulk CMOS technology

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  8. CMOS circuit design, layout and simulation

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  9. Production of biomolecule microarrays through laser induced forward transfer

    Fernandez-Pradas, Juan Marcos; Serra, Pere; Colina, Monica; Morenza, Jose-Luis

    2004-10-01

    Biomolecule microarrays are a kind of biosensors that consist in patterns of different biological molecules immobilized on a solid substrate and capable to bind specifically to their complementary targets. In particular, DNA and protein microarrays have been revealed to be very efficient devices for genen and protein identification, what has converted them in powerful tools for many applications, like clinical diagnose, drug discovery analysis, genomics and proteomics. The production of these devices requires the manipulation of tiny amounts of a liquid solution containing biomolecules without damaging them. In this work laser induced forward transfer (LIFT) has been used for spotting a biomolecule in order to check the viability of this technique for the production of microarrays. A pulsed Nd:YAG laser beam (355 nm wavelength) has been used to transfer droplets of a biomolecule containing solution onto a solid slide. Optical microscopy of the transferred material has been carried out to investigate the morphological characteristics of the droplets obtained under different irradiation conditions. Afterwards, a DNA microarray has been spotted. The viability of the transference has been tested by checking the biological activity of the biomolecule in front of its specific complementary target. This has revealed that, indeed, the LIFT technique is adequate for the production of DNA microarrays.

  10. Microarray results: how accurate are they?

    Mane Shrikant

    2002-08-01

    Full Text Available Abstract Background DNA microarray technology is a powerful technique that was recently developed in order to analyze thousands of genes in a short time. Presently, microarrays, or chips, of the cDNA type and oligonucleotide type are available from several sources. The number of publications in this area is increasing exponentially. Results In this study, microarray data obtained from two different commercially available systems were critically evaluated. Our analysis revealed several inconsistencies in the data obtained from the two different microarrays. Problems encountered included inconsistent sequence fidelity of the spotted microarrays, variability of differential expression, low specificity of cDNA microarray probes, discrepancy in fold-change calculation and lack of probe specificity for different isoforms of a gene. Conclusions In view of these pitfalls, data from microarray analysis need to be interpreted cautiously.

  11. Microarray analysis in pulmonary hypertension.

    Hoffmann, Julia; Wilhelm, Jochen; Olschewski, Andrea; Kwapiszewska, Grazyna

    2016-07-01

    Microarrays are a powerful and effective tool that allows the detection of genome-wide gene expression differences between controls and disease conditions. They have been broadly applied to investigate the pathobiology of diverse forms of pulmonary hypertension, namely group 1, including patients with idiopathic pulmonary arterial hypertension, and group 3, including pulmonary hypertension associated with chronic lung diseases such as chronic obstructive pulmonary disease and idiopathic pulmonary fibrosis. To date, numerous human microarray studies have been conducted to analyse global (lung homogenate samples), compartment-specific (laser capture microdissection), cell type-specific (isolated primary cells) and circulating cell (peripheral blood) expression profiles. Combined, they provide important information on development, progression and the end-stage disease. In the future, system biology approaches, expression of noncoding RNAs that regulate coding RNAs, and direct comparison between animal models and human disease might be of importance. PMID:27076594

  12. How Can Microarrays Unlock Asthma?

    Alen Faiz

    2012-01-01

    Full Text Available Asthma is a complex disease regulated by the interplay of a large number of underlying mechanisms which contribute to the overall pathology. Despite various breakthroughs identifying genes related to asthma, our understanding of the importance of the genetic background remains limited. Although current therapies for asthma are relatively effective, subpopulations of asthmatics do not respond to these regimens. By unlocking the role of these underlying mechanisms, a source of novel and more effective treatments may be identified. In the new age of high-throughput technologies, gene-expression microarrays provide a quick and effective method of identifying novel genes and pathways, which would be impossible to discover using an individual gene screening approach. In this review we follow the history of expression microarray technologies and describe their contributions to advancing our current knowledge and understanding of asthma pathology.

  13. Phenotypic MicroRNA Microarrays

    Veronica Soloveva

    2013-04-01

    Full Text Available Microarray technology has become a very popular approach in cases where multiple experiments need to be conducted repeatedly or done with a variety of samples. In our lab, we are applying our high density spots microarray approach to microscopy visualization of the effects of transiently introduced siRNA or cDNA on cellular morphology or phenotype. In this publication, we are discussing the possibility of using this micro-scale high throughput process to study the role of microRNAs in the biology of selected cellular models. After reverse-transfection of microRNAs and siRNA, the cellular phenotype generated by microRNAs regulated NF-κB expression comparably to the siRNA. The ability to print microRNA molecules for reverse transfection into cells is opening up the wide horizon for the phenotypic high content screening of microRNA libraries using cellular disease models.

  14. TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

    Buckland, Matthew Daniel

    2016-01-01

    The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

  15. A novel CMOS sensor with in-pixel auto-zeroed discrimination for charged particle tracking

    With the aim of developing fast and granular Monolithic Active Pixels Sensors (MAPS) as new charged particle tracking detectors for high energy physics experiments, a new rolling shutter binary pixel architecture concept (RSBPix) with in-pixel correlated double sampling, amplification and discrimination is presented. The discriminator features auto-zeroing in order to compensate process-related transistor mismatches. In order to validate the pixel, a first monolithic CMOS sensor prototype, including a pixel array of 96 × 64 pixels, has been designed and fabricated in the Tower-Jazz 0.18 μm CMOS Image Sensor (CIS) process. Results of laboratory tests are presented

  16. Ultra-low Voltage CMOS Cascode Amplifier

    Lehmann, Torsten; Cassia, Marco

    In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique...

  17. Nanometer CMOS ICS from basics to asics

    Veendrick, Harry

    2008-01-01

    Explores all associated disciplines of nanometer CMOS ICs Includes physics, design, process, yield, packaging, power, variability, reliability and signal integrityIncludes extensive discussions on future trends and challengesAll subjects are described at the same level of clarity Well-suited for self-study

  18. CMOS VHF transconductance-C lowpass filter

    Nauta, B.

    1990-01-01

    Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

  19. A 24GHz Radar Receiver in CMOS

    Kwok, K.C.

    2015-01-01

    This thesis investigates the system design and circuit implementation of a 24GHz-band short-range radar receiver in CMOS technology. The propagation and penetration properties of EM wave offer the possibility of non-contact based remote sensing and through-the-wall imaging of distance stationary or

  20. Analog IC reliability in nanometer CMOS

    Maricau, Elie

    2013-01-01

    This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed.   The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.   ·         Enables readers to understand long-term reliability of an integrated circuit; ·         Reviews CMOS unreliability effects, with focus on those that will emerge in future CMOS nodes; ·         Provides overview of models for...

  1. Fully CMOS-compatible titanium nitride nanoantennas

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing

  2. Smart temperature sensors in standard CMOS

    Makinwa, K.A.A.

    2010-01-01

    A smart temperature sensor is an integrated system consisting of a temperature sensor, its bias circuitry and an analog-to-digital converter (ADC). When manufactured in CMOS technology, such sensors have found widespread use due to their low cost, small size and ease of use. In this paper the basic

  3. Low energy CMOS for space applications

    Panwar, Ramesh; Alkalaj, Leon

    1992-01-01

    The current focus of NASA's space flight programs reflects a new thrust towards smaller, less costly, and more frequent space missions, when compared to missions such as Galileo, Magellan, or Cassini. Recently, the concept of a microspacecraft was proposed. In this concept, a small, compact spacecraft that weighs tens of kilograms performs focused scientific objectives such as imaging. Similarly, a Mars Lander micro-rover project is under study that will allow miniature robots weighing less than seven kilograms to explore the Martian surface. To bring the microspacecraft and microrover ideas to fruition, one will have to leverage compact 3D multi-chip module-based multiprocessors (MCM) technologies. Low energy CMOS will become increasingly important because of the thermodynamic considerations in cooling compact 3D MCM implementations and also from considerations of the power budget for space applications. In this paper, we show how the operating voltage is related to the threshold voltage of the CMOS transistors for accomplishing a task in VLSI with minimal energy. We also derive expressions for the noise margins at the optimal operating point. We then look at a low voltage CMOS (LVCMOS) technology developed at Stanford University which improves the power consumption over conventional CMOS by a couple of orders of magnitude and consider the suitability of the technology for space applications by characterizing its SEU immunity.

  4. Fully CMOS-compatible titanium nitride nanoantennas

    Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

    2016-02-01

    CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

  5. Low noise monolithic CMOS front end electronics

    Design considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (orig.)

  6. Changes in hepatic gene expression related to innate immunity, growth and iron metabolism in GH-transgenic amago salmon (Oncorhynchus masou) by cDNA subtraction and microarray analysis, and serum lysozyme activity.

    Mori, Tsukasa; Hiraka, Ikuei; Kurata, Youichi; Kawachi, Hiroko; Mano, Nobuhiro; Devlin, Robert H; Nagoya, Hiroyuki; Araki, Kazuo

    2007-03-01

    Growth hormone (GH) transgenic amago salmon (Oncorhynchus masou) were generated with a construct containing the sockeye salmon GH1 gene fused to the metallothionein-B (MT-B) promoter from the same species. This transgene directed significant growth enhancement with transgenic fish reaching approximately four to five times greater weight than control salmon in F(2) and F(3) generations. This drastic growth enhancement by GH transgene is well known in fish species compared with mammals, however, such fish can show morphological abnormalities and physiological disorders like other GH transgenic animals. GH is known to have many acute effects, but currently there are no data describing the chronic effects of over-expression of GH on various hepatic genes in GH transgenic fish. Hepatic gene expression is anticipated to play very important roles in many physiological functions and growth performance of transgenic and control salmon. To examine these effects, we performed subtractive hybridization (using cDNA generated from liver RNA) in both directions to identify genes both increased and decreased in transgenic salmon relative to controls (576 clones were isolated and sequenced in total). Heme oxygenase, vitelline envelope protein, Acyl-coA binding protein, NADH dehydrogenase, mannose binding lectin-associated serine protease, hemopexin-like protein, leucyte-derived chemotaxin2 (LECT2), and many other genes were obtained in higher clone frequencies suggesting enhanced expression. In contrast, complement C3-1, lectin, rabin, alcohol dehydrogenase, Tc1-like transposase, Delta6-desaturase, and pentraxin genes were obtained in lower frequencies. Microarray analysis was also performed to obtain quantitative expression data for these subtracted cDNA clones. Analysis of fish across seasons was also conducted using both F(2) and F(3) salmon. Results of the microarray data essentially corresponded with those of the subtraction data when both F(2) and F(3) fish were completely

  7. CMOS MEMS capacitive absolute pressure sensor

    This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa−1 in the pressure range of 0–300 kPa. (paper)

  8. Further developments on a novel color sensitive CMOS detector

    Langfelder, G.; Longoni, A.; Zaraga, F.

    2009-05-01

    The Transverse Field Detector (TFD) is a recently proposed Silicon pixel device designed to perform color imaging without the use of color filters. The color detection principle is based on the dependence of the Silicon absorption coefficient from the wavelength and relies on the generation of a suitable transverse electric field configuration, within the semiconductor active layer, to drive photocarriers generated at different depths towards different collecting electrodes. Each electrode has in this way a different spectral response with respect to the incoming wavelength. Pixels with three or four different spectral responses can be implemented within ~ 6 μm of pixel dimension. Thanks to the compatibility with standard triple well CMOS processes, the TFD can be used in an Active Pixel Sensor exploiting a dedicated readout topology, based on a single transistor charge amplifier. The overall APS electronics includes five transistors (5T) and a feedback capacitance, with a resulting overall fill factor around 50%. In this work the three colors and four colors TFD pixel simulations and implementations in a 90 nm standard CMOS triple well technology are described. Details on the design of a TFD APS mini matrix are provided and preliminary experimental results on four colors pixels are presented.

  9. Amorphous selenium direct detection CMOS digital x-ray imager with 25 micron pixel pitch

    Scott, Christopher C.; Abbaszadeh, Shiva; Ghanbarzadeh, Sina; Allan, Gary; Farrier, Michael; Cunningham, Ian A.; Karim, Karim S.

    2014-03-01

    We have developed a high resolution amorphous selenium (a-Se) direct detection imager using a large-area compatible back-end fabrication process on top of a CMOS active pixel sensor having 25 micron pixel pitch. Integration of a-Se with CMOS technology requires overcoming CMOS/a-Se interfacial strain, which initiates nucleation of crystalline selenium and results in high detector dark currents. A CMOS-compatible polyimide buffer layer was used to planarize the backplane and provide a low stress and thermally stable surface for a-Se. The buffer layer inhibits crystallization and provides detector stability that is not only a performance factor but also critical for favorable long term cost-benefit considerations in the application of CMOS digital x-ray imagers in medical practice. The detector structure is comprised of a polyimide (PI) buffer layer, the a-Se layer, and a gold (Au) top electrode. The PI layer is applied by spin-coating and is patterned using dry etching to open the backplane bond pads for wire bonding. Thermal evaporation is used to deposit the a-Se and Au layers, and the detector is operated in hole collection mode (i.e. a positive bias on the Au top electrode). High resolution a-Se diagnostic systems typically use 70 to 100 μm pixel pitch and have a pre-sampling modulation transfer function (MTF) that is significantly limited by the pixel aperture. Our results confirm that, for a densely integrated 25 μm pixel pitch CMOS array, the MTF approaches the fundamental material limit, i.e. where the MTF begins to be limited by the a-Se material properties and not the pixel aperture. Preliminary images demonstrating high spatial resolution have been obtained from a frst prototype imager.

  10. Construction of metastatic spinal cancer tissue microarrays

    Yang Xinghai; Chen Huajiang; Xiao Jianru; Yuan Wen; Jia Lianshun

    2009-01-01

    Objective: To explore the construction of metastatic spinal cancer (MSC) tissue microarrays and validate its value in immunohistochemical study of MSC. Methods: Paraffin-embedded specimens from 71 MSC cases and 6 primary tumor cases were selected as donor blocks and prepared into MSC tissue microarrays by tissue array arrangement, the steps of which included location, punching, sampling, sample seeding, and re-diagnosis by hematoxylin-eosin (HE) as well as MMP-9 and MMP-14 immunohistochemical staining. Results: The MSC tissue microarrays thus constructed were intact and crackless, containing 154 complete and well arranged microarray points. None of the sectioned tissue microarrays was lost, and the results of HE staining was consistent with the primary pathologic diagnoses. Immunohistochemical staining was also good without non-specific or marginal effect. Conclusion: The MSC tissue microarrays have a high value in the immunohistochemical study of MSC.

  11. Integrated Amplification Microarrays for Infectious Disease Diagnostics

    Darrell P. Chandler

    2012-11-01

    Full Text Available This overview describes microarray-based tests that combine solution-phase amplification chemistry and microarray hybridization within a single microfluidic chamber. The integrated biochemical approach improves microarray workflow for diagnostic applications by reducing the number of steps and minimizing the potential for sample or amplicon cross-contamination. Examples described herein illustrate a basic, integrated approach for DNA and RNA genomes, and a simple consumable architecture for incorporating wash steps while retaining an entirely closed system. It is anticipated that integrated microarray biochemistry will provide an opportunity to significantly reduce the complexity and cost of microarray consumables, equipment, and workflow, which in turn will enable a broader spectrum of users to exploit the intrinsic multiplexing power of microarrays for infectious disease diagnostics.

  12. Dynamic of active microorganisms inhabiting a bioleaching industrial heap of low‐grade copper sulfide ore monitored by real‐time PCR and oligonucleotide prokaryotic acidophile microarray

    Remonsellez, Francisco; Galleguillos, Felipe; Moreno‐Paz, Mercedes; Parro, Víctor; Acosta, Mauricio; Demergasso, Cecilia

    2009-01-01

    Summary The bioleaching of metal sulfide has developed into a very important industrial process and understanding the microbial dynamic is key to advancing commercial bioleaching operations. Here we report the first quantitative description of the dynamic of active communities in an industrial bioleaching heap. Acidithiobacillus ferrooxidans was the most abundant during the first part of the leaching cycle, while the abundance of Leptospirillum ferriphilum and Ferroplasma acidiphilum increase...

  13. MICROARRAYS AND THEIR POTENTIAL IN MEDICINE

    Erick Ling; Jie Xu

    2003-01-01

    Advancement in microarray technology can revolutionize many aspects of medicine. Microarrays have applications in gene expression profiling, genotyping, mutation analysis, gene identification, and pharmacology. This paper provides a brief review on the use of microarrays in studies of cancer, infectious diseases, chromosome disorders, neurological/mental disorders, and drugs, along with a prospect on its great potential in diagnosis, prognosis and the treatment of human diseases.

  14. Comprehensive comparison of six microarray technologies

    Yauk, Carole L.; Berndt, M. Lynn; Williams, Andrew; Douglas, George R

    2004-01-01

    Microarray technology is extensively used in biological research. The applied technologies vary greatly between laboratories, and outstanding questions remain regarding the degree of correlation among approaches. Recently, there has been a drive toward ensuring high-quality microarray data by the implementation of MIAME (Minimal Information About a Microarray Experiment) guidelines and an emphasis on ensuring public-availability to all datasets. However, despite its current widespread use and...

  15. Integrating data from heterogeneous DNA microarray platforms

    Valente, Eduardo; Rocha, Miguel

    2015-01-01

    DNA microarrays are one of the most used technologies for gene expression measurement. However, there are several distinct microarray platforms, from different manufacturers, each with its own measurement protocol, resulting in data that can hardly be compared or directly integrated. Data integration from multiple sources aims to improve the assertiveness of statistical tests, reducing the data dimensionality problem. The integration of heterogeneous DNA microarray platforms comprehends a set...

  16. Protein Microarrays for Quantitative Detection of PAI-1 in Serum

    Xu Ma; Qing-yun Zhang

    2012-01-01

    Objective:Plasminogen activator inhibitor-1 (PAl-1),one crucial component of the plasminogen activator system,is a major player in the pathogenesis of many vascular diseases as well as in cancer.High levels of PAI-1 in breast cancer tissue are associated with poor prognosis.The aim of this study is to evaluate rigorously the potential of serum PAl-1 concentration functioning as a general screening test in diagnostic or prognostic assays.Methods:A protein-microarray-based sandwich fluorescence immunoassay (FIA) was developed to detect PAl-1 in serum.Several conditions of this microarray-based FIA were optimized to establish an efficacious method.Serum specimens of 84 healthy women and 285 women with breast cancer were analyzed using the optimized FIA microarray.Results:The median serum PAl-1 level of breast cancer patients was higher than that of healthy women (109.7 ng/ml vs.63.4 ng/ml).Analysis of covariance revealed that PAl-1 levels of the two groups were significantly different (P<0.001) when controlling for an age effect on PAl-1 levels.However,PAl-1 values in TNM stage Ⅰ-Ⅳ patients respectively were not significantly different from each other.Conclusion:This microarray-based sandwich FIA holds potential for quantitative analysis of tumor markers such as PAl-1.

  17. Graphene/Si CMOS Hybrid Hall Integrated Circuits

    Huang, Le; Xu, Huilong; Zhang, Zhiyong; Chen, Chengying; Jiang, Jianhua; Ma, Xiaomeng; Chen, Bingyan; Li, Zishen; Zhong, Hua; Peng, Lian-Mao

    2014-07-01

    Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS ICs for the first time, and a high performance graphene/CMOS hybrid Hall IC is demonstrated. Signal amplifying/process ICs are manufactured via commercial 0.18 um silicon CMOS technology, and graphene Hall elements (GHEs) are fabricated on top of the passivation layer of the CMOS chip via a low-temperature micro-fabrication process. The sensitivity of the GHE on CMOS chip is further improved by integrating the GHE with the CMOS amplifier on the Si chip. This work not only paves the way to fabricate graphene/Si CMOS Hall ICs with much higher performance than that of conventional Hall ICs, but also provides a general method for scalable integration of graphene devices with silicon CMOS ICs via a low-temperature process.

  18. An Implantable CMOS Amplifier for Nerve Signals

    Nielsen, Jannik Hammel; Lehmann, Torsten

    2001-01-01

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact on...... the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a...

  19. IR CMOS: infrared enhanced silicon imaging

    Pralle, M. U.; Carey, J. E.; Haddad, Homayoon; Vineis, C.; Sickler, J.; Li, X.; Jiang, J.; Sahebi, F.; Palsule, C.; McKee, J.

    2013-06-01

    SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as well as infrared light from the night glow, this sensor technology provides imaging in daytime through twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is from 400 to 1200 nm.

  20. Noise in a CMOS digital pixel sensor

    Zhang Chi; Yao Suying; Xu Jiangtao

    2011-01-01

    Based on the study of noise performance in CMOS digital pixel sensor (DPS),a mathematical model of noise is established with the pulse-width-modulation (PWM) principle.Compared with traditional CMOS image sensors,the integration time is different and A/D conversion is implemented in each PWM DPS pixel.Then,the quantitative calculating formula of system noise is derived.It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region.In this model,photodiode shot noise does not vary with luminance,but dark current shot noise does.According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator,the total noise can be reduced.These results serve as a guideline for the design of PWM DPS.

  1. Ultralow-Loss CMOS Copper Plasmonic Waveguides.

    Fedyanin, Dmitry Yu; Yakubovsky, Dmitry I; Kirtaev, Roman V; Volkov, Valentyn S

    2016-01-13

    Surface plasmon polaritons can give a unique opportunity to manipulate light at a scale well below the diffraction limit reducing the size of optical components down to that of nanoelectronic circuits. At the same time, plasmonics is mostly based on noble metals, which are not compatible with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which can outperform gold plasmonic waveguides simultaneously providing long (>40 μm) propagation length and deep subwavelength (∼λ(2)/50, where λ is the free-space wavelength) mode confinement in the telecommunication spectral range. These results create the backbone for the development of a CMOS plasmonic platform and its integration in future electronic chips. PMID:26654281

  2. Noise in a CMOS digital pixel sensor

    Based on the study of noise performance in CMOS digital pixel sensor (DPS), a mathematical model of noise is established with the pulse-width-modulation (PWM) principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator's reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS. (semiconductor integrated circuits)

  3. Cmos spdt switch for wlan applications

    Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

    2015-04-01

    WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

  4. CMOS Camera Array With Onboard Memory

    Gat, Nahum

    2009-01-01

    A compact CMOS (complementary metal oxide semiconductor) camera system has been developed with high resolution (1.3 Megapixels), a USB (universal serial bus) 2.0 interface, and an onboard memory. Exposure times, and other operating parameters, are sent from a control PC via the USB port. Data from the camera can be received via the USB port and the interface allows for simple control and data capture through a laptop computer.

  5. Cantilever-Based Biosensors in CMOS Technology

    Kirstein, K -U; Zimmermann, M; Vancura, C; Volden, T; Song, W H; Lichtenberg, J; Hierlemannn, A

    2011-01-01

    Single-chip CMOS-based biosensors that feature microcantilevers as transducer elements are presented. The cantilevers are functionalized for the capturing of specific analytes, e.g., proteins or DNA. The binding of the analyte changes the mechanical properties of the cantilevers such as surface stress and resonant frequency, which can be detected by an integrated Wheatstone bridge. The monolithic integrated readout allows for a high signal-to-noise ratio, lowers the sensitivity to external interference and enables autonomous device operation.

  6. Air Quality Monitoring Using CCD/ CMOS Devices

    Low, Khee Lam; Joanna, Tan Choay Ee; Sim, Keat; Jafri, Mohd Zubir Mat; and, Khiruddin Abdullah

    2010-01-01

    In this chapter, we showed a method for measuring of the air quality index by using the CCD/CMOS sensor. We showed two examples to obtain index values by using webcam and CCTV. Both devices provided a high correlation between the measured and estimated PM10. So, the imaging method is capable to measure PM10 values in the environment. Futher application can be conducted using different devices.

  7. A Light Source for Testing CMOS Imagers

    Hancock, Jed J.; Baker, Doran

    2003-01-01

    Testing the optical properties of complementary metal oxide (CMOS) imagers requires a light source. The light source must produce stable uniform light with calibrated wavelength and intensity. Available commercial light source units are costly and often unalterable to a custom test setup. The proposed light source is designed to be affordable and adaptable while maintaining the necessary optical quality. The design consists of an array of light emitting diodes (LED), an infrared (IR) cut-off ...

  8. Low Power Oriented CMOS Circuit Optimization Protocol

    Verle, A.; Michel, X.; Azemard, Nadine; Maurine, Philippe; Auvergne, Daniel

    2007-01-01

    Low power oriented circuit optimization consists in selecting the best alternative between gate sizing, buffer insertion and logic structure transformation, for satisfying a delay constraint at minimum area cost. In this paper we used a closed form model of delay in CMOS structures to define metrics for a deterministic selection of the optimization alternative. The target is delay constraint satisfaction with minimum area cost. We validate the design space exploration method, defining maximum...

  9. Disc-based microarrays: principles and analytical applications.

    Morais, Sergi; Puchades, Rosa; Maquieira, Ángel

    2016-07-01

    The idea of using disk drives to monitor molecular biorecognition events on regular optical discs has received considerable attention during the last decade. CDs, DVDs, Blu-ray discs and other new optical discs are universal and versatile supports with the potential for development of protein and DNA microarrays. Besides, standard disk drives incorporated in personal computers can be used as compact and affordable optical reading devices. Consequently, a CD technology, resulting from the audio-video industry, has been used to develop analytical applications in health care, environmental monitoring, food safety and quality assurance. The review presents and critically evaluates the current state of the art of disc-based microarrays with illustrative examples, including past, current and future developments. Special mention is made of the analytical developments that use either chemically activated or raw standard CDs where proteins, oligonucleotides, peptides, haptens or other biological probes are immobilized. The discs are also used to perform the assays and must maintain their readability with standard optical drives. The concept and principle of evolving disc-based microarrays and the evolution of disk drives as optical detectors are also described. The review concludes with the most relevant uses ordered chronologically to provide an overview of the progress of CD technology applications in the life sciences. Also, it provides a selection of important references to the current literature. Graphical Abstract High density disc-based microarrays. PMID:26922341

  10. A Surface Micromachined CMOS MEMS Humidity Sensor

    Jian-Qiu Huang

    2015-10-01

    Full Text Available This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the piezoresistive humidity sensor. Compared with a bulk micromachined humidity sensor, the machining precision and the sizes of the surface micromachined humidity sensor were both improved. The package and test systems of the sensor were designed. According to the test results, the sensitivity of the sensor was 7 mV/%RH (relative humidity and the linearity of the sensor was 1.9% at 20 °C. Both the sensitivity and linearity were not sensitive to the temperature but the curve of the output voltage shifted with the temperature. The hysteresis of the humidity sensor decreased from 3.2% RH to 1.9% RH as the temperature increased from 10 to 40 °C. The recovery time of the sensor was 85 s at room temperature (25 °C.

  11. CMOS imagers from phototransduction to image processing

    Etienne-Cummings, Ralph

    2004-01-01

    The idea of writing a book on CMOS imaging has been brewing for several years. It was placed on a fast track after we agreed to organize a tutorial on CMOS sensors for the 2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004). This tutorial defined the structure of the book, but as first time authors/editors, we had a lot to learn about the logistics of putting together information from multiple sources. Needless to say, it was a long road between the tutorial and the book, and it took more than a few months to complete. We hope that you will find our journey worthwhile and the collated information useful. The laboratories of the authors are located at many universities distributed around the world. Their unifying theme, however, is the advancement of knowledge for the development of systems for CMOS imaging and image processing. We hope that this book will highlight the ideas that have been pioneered by the authors, while providing a roadmap for new practitioners in this field to exploit exc...

  12. CMOS-controlled rapidly tunable photodetectors

    Chen, Ray

    With rapidly increasing data bandwidth demands, wavelength-division-multiplexing (WDM) optical access networks seem unavoidable in the near future. To operate WDM optical networks in an efficient scheme, wavelength reconfigurability and scalability of the network are crucial. Unfortunately, most of the existing wavelength tunable technologies are neither rapidly tunable nor spectrally programmable. This dissertation presents a tunable photodetector that is designed for dynamic-wavelength allocation WDM network environments. The wavelength tuning mechanism is completely different from existing technologies. The spectrum of this detector is programmable through low-voltage digital patterns. Since the wavelength selection is achieved by electronic means, the device wavelength reconfiguration time is as fast as the electronic switching time. In this dissertation work, we have demonstrated a tunable detector that is hybridly integrated with its customized CMOS driver and receiver with nanosecond wavelength reconfiguration time. In addition to its nanosecond wavelength reconfiguration time, the spectrum of this detector is digitally programmable, which means that it can adapt to system changes without re-fabrication. We have theoretically developed and experimentally demonstrated two device operating algorithms based on the same orthogonal device-optics basis. Both the rapid wavelength tuning time and the scalability make this novel device very viable for new reconfigurable WDM networks. By taking advantage of CMOS circuit design, this detector concept can be further extended for simultaneous multiple wavelength detection. We have developed one possible chip architecture and have designed a CMOS tunable optical demux for simultaneous controllable two-wavelength detection.

  13. Application of microarray technology in pulmonary diseases

    Patlakas George; Tzouvelekis Argyris; Bouros Demosthenes

    2004-01-01

    Abstract Microarrays are a powerful tool that have multiple applications both in clinical and cell biology arenas of common lung diseases. To exemplify how this tool can be useful, in this review, we will provide an overview of the application of microarray technology in research relevant to common lung diseases and present some of the future perspectives.

  14. A Standard CMOS Humidity Sensor without Post-Processing

    Oleg Nizhnik

    2011-06-01

    Full Text Available A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  15. Functional assessment of time course microarray data

    Nueda, María José; Sebastián, Patricia; Tarazona, Sonia; García-García, Francisco; Dopazo, Joaquín; Ferrer, Alberto; Conesa, Ana

    2009-01-01

    Motivation Time-course microarray experiments study the progress of gene expression along time across one or several experimental conditions. Most developed analysis methods focus on the clustering or the differential expression analysis of genes and do not integrate functional information. The assessment of the functional aspects of time-course transcriptomics data requires the use of approaches that exploit the activation dynamics of the functional categories to where genes are annotated. Methods We present three novel methodologies for the functional assessment of time-course microarray data. i) maSigFun derives from the maSigPro method, a regression-based strategy to model time-dependent expression patterns and identify genes with differences across series. maSigFun fits a regression model for groups of genes labeled by a functional class and selects those categories which have a significant model. ii) PCA-maSigFun fits a PCA model of each functional class-defined expression matrix to extract orthogonal patterns of expression change, which are then assessed for their fit to a time-dependent regression model. iii) ASCA-functional uses the ASCA model to rank genes according to their correlation to principal time expression patterns and assess functional enrichment on a GSA fashion. We used simulated and experimental datasets to study these novel approaches. Results were compared to alternative methodologies. Results Synthetic and experimental data showed that the different methods are able to capture different aspects of the relationship between genes, functions and co-expression that are biologically meaningful. The methods should not be considered as competitive but they provide different insights into the molecular and functional dynamic events taking place within the biological system under study. PMID:19534758

  16. Interferometric comparison of the performance of a CMOS and sCMOS detector

    Flores-Moreno, J. M.; De la Torre I., Manuel H.; Hernández-Montes, M. S.; Pérez-López, Carlos; Mendoza S., Fernando

    2015-08-01

    We present an analysis of the imaging performance of two state-of-the-art sensors widely used in the nondestructive- testing area (NDT). The analysis is based on the quantification of the signal-to-noise (SNR) ratio from an optical phase image. The calculation of the SNR is based on the relation of the median (average) and standard deviation measurements over specific areas of interest in the phase images of both sensors. This retrieved phase is coming from the vibrational behavior of a large object by means of an out-of-plane holographic interferometer. The SNR is used as a figure-of-merit to evaluate and compare the performance of the CMOS and scientific CMOS (sCMOS) camera as part of the experimental set-up. One of the cameras has a high speed CMOS sensor while the other has a high resolution sCMOS sensor. The object under study is a metallically framed table with a Formica cover with an observable area of 1.1 m2. The vibration induced to the sample is performed by a linear step motor with an attached tip in the motion stage. Each camera is used once at the time to record the deformation keeping the same experimental conditions for each case. These measurements may complement the conventional procedures or technical information commonly used to evaluate a camerás performance such as: quantum efficiency, spatial resolution and others. Results present post processed images from both cameras, but showing a smoother and easy to unwrap optical phase coming from those recorded with the sCMOS camera.

  17. On-chip solar battery structure for CMOS LSI

    Arima, Yutaka; Ehara, Masaya

    2006-01-01

    A built-in method of on-chip solar battery in a CMOS LSI is proposed. The proposed solar battery can be formed using conventional CMOS process technology. It can generate a high voltage of 0.6-0.83 V by a series connection structure of two types of p-n junction diodes formed with the CMOS circuit simultaneously on the LSI chip. The generated voltage is sufficient to drive the conventional CMOS circuit without modi. cation. The test chip was produced experimentally using conventional 0.35 mu m...

  18. Current-mode CMOS hybrid image sensor

    Benyhesan, Mohammad Kassim

    Digital imaging is growing rapidly making Complimentary Metal-Oxide-Semi conductor (CMOS) image sensor-based cameras indispensable in many modern life devices like cell phones, surveillance devices, personal computers, and tablets. For various purposes wireless portable image systems are widely deployed in many indoor and outdoor places such as hospitals, urban areas, streets, highways, forests, mountains, and towers. However, the increased demand on high-resolution image sensors and improved processing features is expected to increase the power consumption of the CMOS sensor-based camera systems. Increased power consumption translates into a reduced battery life-time. The increased power consumption might not be a problem if there is access to a nearby charging station. On the other hand, the problem arises if the image sensor is located in widely spread areas, unfavorable to human intervention, and difficult to reach. Given the limitation of energy sources available for wireless CMOS image sensor, an energy harvesting technique presents a viable solution to extend the sensor life-time. Energy can be harvested from the sun light or the artificial light surrounding the sensor itself. In this thesis, we propose a current-mode CMOS hybrid image sensor capable of energy harvesting and image capture. The proposed sensor is based on a hybrid pixel that can be programmed to perform the task of an image sensor and the task of a solar cell to harvest energy. The basic idea is to design a pixel that can be configured to exploit its internal photodiode to perform two functions: image sensing and energy harvesting. As a proof of concept a 40 x 40 array of hybrid pixels has been designed and fabricated in a standard 0.5 microm CMOS process. Measurement results show that up to 39 microW of power can be harvested from the array under 130 Klux condition with an energy efficiency of 220 nJ /pixel /frame. The proposed image sensor is a current-mode image sensor which has several

  19. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 μm technology

    Pellion, D.; Jradi, K.; Brochard, N.; Prêle, D.; Ginhac, D.

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 μm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm2) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters1

  20. X-ray characterization of CMOS imaging detector with high resolution for fluoroscopic imaging application

    This paper introduces complementary metal-oxide semiconductor (CMOS) active pixel sensor (APS)-based X-ray imaging detectors with high spatial resolution for medical imaging application. In this study, our proposed X-ray CMOS imaging sensor has been fabricated by using a 0.35 µm 1 Poly 4 Metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 24×96 pixels, which provide a field-of-view (FOV) of 9.6 mm×2.4 mm. The 14.3-bit extend counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. Both thallium-doped CsI (CsI:Tl) and Gd2O2S:Tb scintillator screens were used as converters for incident X-rays to visible light photons. The optical property and X-ray imaging characterization such as X-ray to light response as a function of incident X-ray exposure dose, spatial resolution and X-ray images of objects were measured under different X-ray energy conditions. The measured results suggest that our developed CMOS-based X-ray imaging detector has the potential for fluoroscopic imaging and cone-beam computed tomography (CBCT) imaging applications

  1. X-ray characterization of CMOS imaging detector with high resolution for fluoroscopic imaging application

    Cha, Bo Kyung; Kim, Cho Rong; Jeon, Seongchae; Kim, Ryun Kyung; Seo, Chang-Woo; Yang, Keedong; Heo, Duchang; Lee, Tae-Bum; Shin, Min-Seok; Kim, Jong-Boo; Kwon, Oh-Kyung

    2013-12-01

    This paper introduces complementary metal-oxide semiconductor (CMOS) active pixel sensor (APS)-based X-ray imaging detectors with high spatial resolution for medical imaging application. In this study, our proposed X-ray CMOS imaging sensor has been fabricated by using a 0.35 μm 1 Poly 4 Metal CMOS process. The pixel size is 100 μm×100 μm and the pixel array format is 24×96 pixels, which provide a field-of-view (FOV) of 9.6 mm×2.4 mm. The 14.3-bit extend counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. Both thallium-doped CsI (CsI:Tl) and Gd2O2S:Tb scintillator screens were used as converters for incident X-rays to visible light photons. The optical property and X-ray imaging characterization such as X-ray to light response as a function of incident X-ray exposure dose, spatial resolution and X-ray images of objects were measured under different X-ray energy conditions. The measured results suggest that our developed CMOS-based X-ray imaging detector has the potential for fluoroscopic imaging and cone-beam computed tomography (CBCT) imaging applications.

  2. Development of a multi-analyte CMOS sensor for point-of-care testing

    Holger Klapproth

    2015-09-01

    Full Text Available A typical microarray experiment requires both a biochip on which the biological reactions take place and a microarray scanner for analysis and visualization of the data. Here, we report on the generation of a chip, which consists of a CMOS photodiode array onto which receptors are immobilized and which are used for the detection and quantification of proteins in sera solution. Such an approach allows direct electronic read-out of the chip via a computer port so that the size of the whole analytical setup is very compact, opening the avenue to the generation of simple handheld devices. ELISA reactions directly performed on the surface of the photodiode arrays are used to measure a number of serum factors with a broad range in concentrations of samples with volumes of less than 10 μl. As in physiological sera analyte concentrations of the different parameters vary frequently by several orders of magnitude, parallel competitive reactions are used to adjust the dynamic range of several ELISA tests on the chip. We show as a demonstration case that this allows to quantify simultaneously C-reactive protein, Immunoglobulin E, Cystatin C, Myoglobin and Ferritin in a single assay.

  3. Current Development of CMOS Image Sensors%CMOS 图像传感器的发展现状

    王宝元; 吴三灵; 温波; 焦明纲; 周发明

    2000-01-01

    Aim To review the current development of CMOS image sensors. Methods The background, architecture and current development of CMOS image sensors is describled. The trade-offs between the CMOS image sensors and the CCD image sensors are put forword. Results The development tendency of CMOS image sensors is discussed. Conclusion The CMOS image sensor has the potential of a wide range of application.%目的 了解当前CMOS图像传感器的发展状况. 方法 详细介绍了图像传感器的历史背景、发展现状、像素单元的结构、工作原理以及 CMOS 图像传感器芯片的整体结构,并比较了 CMOS 图像传感器和 CCD 图像传感器的优、 缺点. 结果 指出了 CMOS 图像传感器发展趋势. 结论 CMOS 图像传感器具有美好的发展前途.

  4. Transcriptome analysis of zebrafish embryogenesis using microarrays.

    Sinnakaruppan Mathavan

    2005-08-01

    Full Text Available Zebrafish (Danio rerio is a well-recognized model for the study of vertebrate developmental genetics, yet at the same time little is known about the transcriptional events that underlie zebrafish embryogenesis. Here we have employed microarray analysis to study the temporal activity of developmentally regulated genes during zebrafish embryogenesis. Transcriptome analysis at 12 different embryonic time points covering five different developmental stages (maternal, blastula, gastrula, segmentation, and pharyngula revealed a highly dynamic transcriptional profile. Hierarchical clustering, stage-specific clustering, and algorithms to detect onset and peak of gene expression revealed clearly demarcated transcript clusters with maximum gene activity at distinct developmental stages as well as co-regulated expression of gene groups involved in dedicated functions such as organogenesis. Our study also revealed a previously unidentified cohort of genes that are transcribed prior to the mid-blastula transition, a time point earlier than when the zygotic genome was traditionally thought to become active. Here we provide, for the first time to our knowledge, a comprehensive list of developmentally regulated zebrafish genes and their expression profiles during embryogenesis, including novel information on the temporal expression of several thousand previously uncharacterized genes. The expression data generated from this study are accessible to all interested scientists from our institute resource database (http://giscompute.gis.a-star.edu.sg/~govind/zebrafish/data_download.html.

  5. MARS: Microarray analysis, retrieval, and storage system

    Scheideler Marcel

    2005-04-01

    Full Text Available Abstract Background Microarray analysis has become a widely used technique for the study of gene-expression patterns on a genomic scale. As more and more laboratories are adopting microarray technology, there is a need for powerful and easy to use microarray databases facilitating array fabrication, labeling, hybridization, and data analysis. The wealth of data generated by this high throughput approach renders adequate database and analysis tools crucial for the pursuit of insights into the transcriptomic behavior of cells. Results MARS (Microarray Analysis and Retrieval System provides a comprehensive MIAME supportive suite for storing, retrieving, and analyzing multi color microarray data. The system comprises a laboratory information management system (LIMS, a quality control management, as well as a sophisticated user management system. MARS is fully integrated into an analytical pipeline of microarray image analysis, normalization, gene expression clustering, and mapping of gene expression data onto biological pathways. The incorporation of ontologies and the use of MAGE-ML enables an export of studies stored in MARS to public repositories and other databases accepting these documents. Conclusion We have developed an integrated system tailored to serve the specific needs of microarray based research projects using a unique fusion of Web based and standalone applications connected to the latest J2EE application server technology. The presented system is freely available for academic and non-profit institutions. More information can be found at http://genome.tugraz.at.

  6. Microarray analysis of gene expression profiles in ripening pineapple fruits

    Koia Jonni H

    2012-12-01

    Full Text Available Abstract Background Pineapple (Ananas comosus is a tropical fruit crop of significant commercial importance. Although the physiological changes that occur during pineapple fruit development have been well characterized, little is known about the molecular events that occur during the fruit ripening process. Understanding the molecular basis of pineapple fruit ripening will aid the development of new varieties via molecular breeding or genetic modification. In this study we developed a 9277 element pineapple microarray and used it to profile gene expression changes that occur during pineapple fruit ripening. Results Microarray analyses identified 271 unique cDNAs differentially expressed at least 1.5-fold between the mature green and mature yellow stages of pineapple fruit ripening. Among these 271 sequences, 184 share significant homology with genes encoding proteins of known function, 53 share homology with genes encoding proteins of unknown function and 34 share no significant homology with any database accession. Of the 237 pineapple sequences with homologs, 160 were up-regulated and 77 were down-regulated during pineapple fruit ripening. DAVID Functional Annotation Cluster (FAC analysis of all 237 sequences with homologs revealed confident enrichment scores for redox activity, organic acid metabolism, metalloenzyme activity, glycolysis, vitamin C biosynthesis, antioxidant activity and cysteine peptidase activity, indicating the functional significance and importance of these processes and pathways during pineapple fruit development. Quantitative real-time PCR analysis validated the microarray expression results for nine out of ten genes tested. Conclusions This is the first report of a microarray based gene expression study undertaken in pineapple. Our bioinformatic analyses of the transcript profiles have identified a number of genes, processes and pathways with putative involvement in the pineapple fruit ripening process. This study

  7. Faint-meteor survey with a large-format CMOS sensor

    Watanabe, J.; Enomoto, T.; Terai, T.; Kasuga, T.; Miyazaki, S.; Oota, K.; Muraoka, F.; Onishi, T.; Yamasaki, T.; Mito, H.; Aoki, T.; Soyano, T.; Tarusawa, K.; Matsunaga, N.; Sako, S.; Kobayashi, N.; Doi, M.

    2014-07-01

    performed during the active period of the Geminid meteor shower. We could take valuable data on December 12 and 13. The result will be given in this presentation, together with the future potential of the large format CMOS sensor.

  8. CMOS APS detector characterization for quantitative X-ray imaging

    Endrizzi, Marco, E-mail: m.endrizzi@ucl.ac.uk [Dipartimento di Fisica, Università di Siena, Via Roma 56, 53100 Siena (Italy); Istituto Nazionale di Fisica Nucleare INFN, sezione di Pisa, 56127 Pisa (Italy); Oliva, Piernicola [Dipartimento di Chimica e Farmacia, Università di Sassari, via Piandanna 4, 07100 Sassari (Italy); Istituto Nazionale di Fisica Nucleare INFN, Sezione di Cagliari, 09042 Cagliari (Italy); Golosio, Bruno [Sezione di Matematica, Fisica e Ingegneria dell' Informazione, Università di Sassari, via Piandanna 4, 07100 Sassari (Italy); Istituto Nazionale di Fisica Nucleare INFN, Sezione di Cagliari, 09042 Cagliari (Italy); Delogu, Pasquale [Dipartimento di Fisica “E. Fermi”, Università di Pisa, Largo B. Pontecorvo 3, 56127 Pisa (Italy); Istituto Nazionale di Fisica Nucleare INFN, sezione di Pisa, 56127 Pisa (Italy)

    2013-03-01

    An X-ray Imaging detector based on CMOS Active Pixel Sensor and structured scintillator is characterized for quantitative X-ray imaging in the energy range 11–30 keV. Linearity, dark noise, spatial resolution and flat-field correction are the characteristics of the detector subject of investigation. The detector response, in terms of mean Analog-to-Digital Unit and noise, is modeled as a function of the energy and intensity of the X-rays. The model is directly tested using monochromatic X-ray beams and it is also indirectly validated by means of polychromatic X-ray-tube spectra. Such a characterization is suitable for quantitative X-ray imaging and the model can be used in simulation studies that take into account the actual performance of the detector.

  9. On the response of a europium doped phosphor-coated CMOS digital imaging detector

    Purpose: The purpose of the present study was to assess the information content of a high resolution active pixel CMOS imaging sensor coupled to Gd2O2S:Eu phosphor screens in terms of single index image quality metrics such as the information capacity (IC) and the noise equivalent passband (Ne). Methods: The CMOS sensor was coupled to two Gd2O2S:Eu scintillator screens with coating thicknesses of 33.3 and 65.1 mg/cm2. IC and Ne were obtained by means of experimentally determined parameters such as the modulation transfer function (MTF), the detective quantum efficiency (DQE) and the noise equivalent quanta (NEQ). Measurements were performed using the standard IEC-RQA5 radiation beam quality (70 kVp) and a W/Rh beam quality (28 kVp). Results: It was found that the detector response function was linear for the exposure ranges under investigation. At 70 kVp, under the RQA 5 conditions IC values were found to range between 1730 and 1851 bits/mm2 and Ne values were found between 2.28 and 2.52 mm−1. At 28 kVp the corresponding IC values were found to range between 2535 and 2747 bits/mm2, while the Ne values were found between 5.91 and 7.09 mm−1. Conclusion: IC and Ne of the red emitting phosphor/CMOS sensor combination were found with high values suggesting an acceptable imaging performance in terms of information content and sharpness, for X-ray digital imaging. -- Highlights: •Gd2O2S:Eu/CMOS combination has comparable image quality parameters to Gd2O2S:Tb/CMOS. •Information capacity was found with high values suggesting an acceptable imaging performance. •Red emitting phosphors coupled to silicon based optical sensors could be used in developing efficient imaging detectors

  10. Développement d'un capteur CMOS intégré pour un futur dosimètre électronique personnel de neutrons

    Zhang, Ying

    2012-01-01

    This thesis presents the development of CMOS sensors for a future neutron sensitive electronic individual dosemeter. Active dosemeters, exist but do not yet give results as satisfactory as passive devices, being however, mandatory for workers in addition to the passive dosimetry since 1995 (IEC 1323). The RaMsEs group in the laboratory IPHC is exploring a new compact device based on CMOS sensors for operational neutron dosimetry. In this thesis, a dedicated sensor, AlphaRad-2, with low noise ...

  11. Développement d'un capteur de pixels CMOS pour les couches externes du détecteur de vertex ILC

    Zhang, Liang

    2013-01-01

    This work deals with the design of a CMOS pixel sensor prototype (called MIMOSA 31) for the outer layers of the International Linear Collider (ILC) vertex detector. CMOS pixel sensors (CPS) also called monolithic active pixel sensors (MAPS) have demonstrated attractive performance towards the requirements of the vertex detector of the future linear collider. MIMOSA 31developed at IPHC-Strasbourg is the first pixel sensor integrated with 4-bit column-level ADC for the outer layers. It is compo...

  12. From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

    Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.;

    2008-01-01

    This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

  13. Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects

    Ramachandra Rao, P.

    2009-01-01

    The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-μm CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radia

  14. Charge-Transfer CMOS Image Sensors: Device and Radiation Aspects

    Ramachandra Rao, P.

    2009-01-01

    The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-μm CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radiation and device physics amongst each other.

  15. BioCMOS Interfaces and Co-Design

    Carrara, Sandro

    2013-01-01

    The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

  16. High-performance VGA-resolution digital color CMOS imager

    Agwani, Suhail; Domer, Steve; Rubacha, Ray; Stanley, Scott

    1999-04-01

    This paper discusses the performance of a new VGA resolution color CMOS imager developed by Motorola on a 0.5micrometers /3.3V CMOS process. This fully integrated, high performance imager has on chip timing, control, and analog signal processing chain for digital imaging applications. The picture elements are based on 7.8micrometers active CMOS pixels that use pinned photodiodes for higher quantum efficiency and low noise performance. The image processing engine includes a bank of programmable gain amplifiers, line rate clamping for dark offset removal, real time auto white balancing, per column gain and offset calibration, and a 10 bit pipelined RSD analog to digital converter with a programmable input range. Post ADC signal processing includes features such as bad pixel replacement based on user defined thresholds levels, 10 to 8 bit companding and 5 tap FIR filtering. The sensor can be programmed via a standard I2C interface that runs on 3.3V clocks. Programmable features include variable frame rates using a constant frequency master clock, electronic exposure control, continuous or single frame capture, progressive or interlace scanning modes. Each pixel is individually addressable allowing region of interest imaging and image subsampling. The sensor operates with master clock frequencies of up to 13.5MHz resulting in 30FPS. A total programmable gain of 27dB is available. The sensor power dissipation is 400mW at full speed of operation. The low noise design yields a measured 'system on a chip' dynamic range of 50dB thus giving over 8 true bits of resolution. Extremely high conversion gain result in an excellent peak sensitivity of 22V/(mu) J/cm2 or 3.3V/lux-sec. This monolithic image capture and processing engine represent a compete imaging solution making it a true 'camera on a chip'. Yet in its operation it remains extremely easy to use requiring only one clock and a 3.3V power supply. Given the available features and performance levels, this sensor will be

  17. GEPAS, a web-based tool for microarray data analysis and interpretation

    Tárraga, Joaquín; Medina, Ignacio; Carbonell, José; Huerta-Cepas, Jaime; Minguez, Pablo; Alloza, Eva; Al-Shahrour, Fátima; Vegas-Azcárate, Susana; Goetz, Stefan; Escobar, Pablo; Garcia-Garcia, Francisco; Conesa, Ana; Montaner, David; Dopazo, Joaquín

    2008-01-01

    Gene Expression Profile Analysis Suite (GEPAS) is one of the most complete and extensively used web-based packages for microarray data analysis. During its more than 5 years of activity it has continuously been updated to keep pace with the state-of-the-art in the changing microarray data analysis arena. GEPAS offers diverse analysis options that include well established as well as novel algorithms for normalization, gene selection, class prediction, clustering and functional profiling of the...

  18. CMOS biomicrosystems where electronics meets biology

    2011-01-01

    "The book will address the-state-of-the-art in integrated Bio-Microsystems that integrate microelectronics with fluidics, photonics, and mechanics. New exciting opportunities in emerging applications that will take system performance beyond offered by traditional CMOS based circuits are discussed in detail. The book is a must for anyone serious about microelectronics integration possibilities for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with electronics background that want to learn about integrated microsystems. The book will be also used as a recommended reading and supplementary material in graduate course curriculum"--

  19. Nano-CMOS gate dielectric engineering

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  20. An Implantable CMOS Amplifier for Nerve Signals

    Nielsen, Jannik Hammel; Lehmann, Torsten

    In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard...

  1. Measurement device for cmos-mems accelerometer

    Somasundaram, Namitha

    2014-01-01

    [ANGLÈS] This project reports the process of development of the Printed Circuit Board (PCB) - Zephyr for the experimental CMOS MEMS accelerometer testchip, Bailed II. The problem of capacitance mismatch at the input bridge is solved through a simple and innovative arrangement of resistors, jumpers and capacitors on the PCB. A filter is designed with the inductor capacitor pair to filter noise from the DC source. An amplifier with a gain of 10 is designed to amplify the output signals of the B...

  2. SEU error rates in advanced digital CMOS

    Space-based electronics is exposed to cosmic radiations that result in bit reversal errors or Single Event Upsets. Those errors are generally taken into account through an error-rate quantification expressed in Expected errors per Bit-Day (EBD). A procedure to evaluate this EBD for CMOS memory devices is presented here and applied to a typical data set. This method arises from a development of the upset rate convolution integral. It can be applied to ground-based test data, and provide a realistic upset-rate estimate for space flight conditions. (D.L.). 20 refs., 7 figs

  3. Plasmonic Modulator Using CMOS Compatible Material Platform

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.; Ferrera, Marcello; Lavrinenko, Andrei; Shalaev, Vladimir M.; Boltasseva, Alexandra

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is...... obtained by varying the ca rrier concentration of th e transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for...... integration with existing insulator-metal-insu lator plasmonic waveguides as well as novel photonic/electronic hybrid circuits...

  4. Plasmonic Modulator Using CMOS Compatible Material Platform

    Babicheva, Viktoriia; Kinsey, Nathaniel; Naik, Gururaj V.;

    2014-01-01

    In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is...... obtained by varying the ca rrier concentration of th e transparent conducting oxide layer and exciting plasmonic resonance in the structure. The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for...

  5. Variation-aware advanced CMOS devices and SRAM

    Shin, Changhwan

    2016-01-01

    This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

  6. The EADGENE Microarray Data Analysis Workshop

    de Koning, Dirk-Jan; Jaffrézic, Florence; Lund, Mogens Sandø;

    2007-01-01

    10 countries performed and discussed the statistical analyses of real and simulated 2-colour microarray data that were distributed among participants. The real data consisted of 48 microarrays from a disease challenge experiment in dairy cattle, while the simulated data consisted of 10 microarrays...... from a direct comparison of two treatments (dye-balanced). While there was broader agreement with regards to methods of microarray normalisation and significance testing, there were major differences with regards to quality control. The quality control approaches varied from none, through using...... statistical weights, to omitting a large number of spots or omitting entire slides. Surprisingly, these very different approaches gave quite similar results when applied to the simulated data, although not all participating groups analysed both real and simulated data. The workshop was very successful in...

  7. Robust image analysis of Beadchip microarrays

    Kalina, Jan; Schlenker, A.

    Prague, 2015. [AMISTAT 2015. Analytical Methods in Statistics. 10.11.2015-13.11.2015, Prague] Institutional support: RVO:67985807 Keywords : microarray * robust image analysis * noise * outlying measurements * background effect Subject RIV: IN - Informatics, Computer Science

  8. 3D Biomaterial Microarrays for Regenerative Medicine

    Gaharwar, Akhilesh K.; Arpanaei, Ayyoob; Andresen, Thomas Lars;

    2015-01-01

    Three dimensional (3D) biomaterial microarrays hold enormous promise for regenerative medicine because of their ability to accelerate the design and fabrication of biomimetic materials. Such tissue-like biomaterials can provide an appropriate microenvironment for stimulating and controlling stem...

  9. Theoretical performance analysis for CMOS based high resolution detectors.

    Jain, Amit; Bednarek, Daniel R; Rudin, Stephen

    2013-03-01

    High resolution imaging capabilities are essential for accurately guiding successful endovascular interventional procedures. Present x-ray imaging detectors are not always adequate due to their inherent limitations. The newly-developed high-resolution micro-angiographic fluoroscope (MAF-CCD) detector has demonstrated excellent clinical image quality; however, further improvement in performance and physical design may be possible using CMOS sensors. We have thus calculated the theoretical performance of two proposed CMOS detectors which may be used as a successor to the MAF. The proposed detectors have a 300 μm thick HL-type CsI phosphor, a 50 μm-pixel CMOS sensor with and without a variable gain light image intensifier (LII), and are designated MAF-CMOS-LII and MAF-CMOS, respectively. For the performance evaluation, linear cascade modeling was used. The detector imaging chains were divided into individual stages characterized by one of the basic processes (quantum gain, binomial selection, stochastic and deterministic blurring, additive noise). Ranges of readout noise and exposure were used to calculate the detectors' MTF and DQE. The MAF-CMOS showed slightly better MTF than the MAF-CMOS-LII, but the MAF-CMOS-LII showed far better DQE, especially for lower exposures. The proposed detectors can have improved MTF and DQE compared with the present high resolution MAF detector. The performance of the MAF-CMOS is excellent for the angiography exposure range; however it is limited at fluoroscopic levels due to additive instrumentation noise. The MAF-CMOS-LII, having the advantage of the variable LII gain, can overcome the noise limitation and hence may perform exceptionally for the full range of required exposures; however, it is more complex and hence more expensive. PMID:24353390

  10. A CMOS high speed imaging system design based on FPGA

    Tang, Hong; Wang, Huawei; Cao, Jianzhong; Qiao, Mingrui

    2015-10-01

    CMOS sensors have more advantages than traditional CCD sensors. The imaging system based on CMOS has become a hot spot in research and development. In order to achieve the real-time data acquisition and high-speed transmission, we design a high-speed CMOS imaging system on account of FPGA. The core control chip of this system is XC6SL75T and we take advantages of CameraLink interface and AM41V4 CMOS image sensors to transmit and acquire image data. AM41V4 is a 4 Megapixel High speed 500 frames per second CMOS image sensor with global shutter and 4/3" optical format. The sensor uses column parallel A/D converters to digitize the images. The CameraLink interface adopts DS90CR287 and it can convert 28 bits of LVCMOS/LVTTL data into four LVDS data stream. The reflected light of objects is photographed by the CMOS detectors. CMOS sensors convert the light to electronic signals and then send them to FPGA. FPGA processes data it received and transmits them to upper computer which has acquisition cards through CameraLink interface configured as full models. Then PC will store, visualize and process images later. The structure and principle of the system are both explained in this paper and this paper introduces the hardware and software design of the system. FPGA introduces the driven clock of CMOS. The data in CMOS is converted to LVDS signals and then transmitted to the data acquisition cards. After simulation, the paper presents a row transfer timing sequence of CMOS. The system realized real-time image acquisition and external controls.

  11. Recent Progress on Developments and Characterization of Hybrid CMOS X-ray Detectors

    Falcone, Abe D; Griffith, Christopher; Bongiorno, Stephen; Burrows, David N

    2012-01-01

    Future space-based X-ray telescope missions are likely to have significantly increased demands on detector read out rates due to increased collection area, and there will be a desire to minimize radiation damage in the interests of maintaining spectral resolution. While CCDs have met the requirements of past missions, active pixel sensors are likely to be a standard choice for some future missions due to their inherent radiation hardness and fast, flexible read-out architecture. One form of active pixel sensor is the hybrid CMOS sensor. In a joint program of Penn State University and Teledyne Imaging Sensors, hybrid CMOS sensors have been developed for use as X-ray detectors. Results of this development effort and tests of fabricated detectors will be presented, along with potential applications for future missions.

  12. Microarray Data Analysis of Gene Expression Evolution

    Honghuang Lin

    2009-01-01

    Microarrays are becoming a widely used tool to study gene expression evolution. A recent paper by Wang and Rekaya describes a comprehensive study of gene expression evolution by microarray.1 The work provides a perspective to study gene expression evolution in terms of functional enrichment and promoter conservation. It was found that gene expression patterns are highly conserved in some biological processes, but the correlation between promoter and gene expression is insignificant. This scop...

  13. Text Mining Perspectives in Microarray Data Mining

    Natarajan, Jeyakumar

    2013-01-01

    Current microarray data mining methods such as clustering, classification, and association analysis heavily rely on statistical and machine learning algorithms for analysis of large sets of gene expression data. In recent years, there has been a growing interest in methods that attempt to discover patterns based on multiple but related data sources. Gene expression data and the corresponding literature data are one such example. This paper suggests a new approach to microarray data mining as ...

  14. Polymer microarrays for cell based applications

    Hansen, Anne Klara Brigitte

    2012-01-01

    The development and identification of new biomaterials that can replace specific tissues and organs is desirable. In the presented PhD thesis polymer microarrays were applied for the screening of polyacrylates and polyurethanes and evaluation for material discovery for applications in the life sciences. In the first part of the thesis, the largest polymer microarray ever made with more than 7000 features was fabricated and subsequently used for the screening of polyacrylates...

  15. Surface free energy and microarray deposition technology

    McHale, Glen

    2007-01-01

    Microarray techniques use a combinatorial approach to assess complex biochemical interactions. The fundamental goal is simultaneous, large-scale experimentation analogous to the automation achieved in the semiconductor industry. However, microarray deposition inherently involves liquids contacting solid substrates. Liquid droplet shapes are determined by surface and interfacial tension forces, and flows during drying. This article looks at how surface free energy and wetting considerations ma...

  16. Development and Validation of Corynebacterium DNA Microarrays

    Loos, Andrea; Glanemann, Christoph; Willis, Laura B.; O'Brien, Xian M; Lessard, Philip A.; Gerstmeir, Robert; Guillouet, Stéphane; Sinskey, Anthony J.

    2001-01-01

    We have developed DNA microarray techniques for studying Corynebacterium glutamicum. A set of 52 C. glutamicum genes encoding enzymes from primary metabolism was amplified by PCR and printed in triplicate onto glass slides. Total RNA was extracted from cells harvested during the exponential-growth and lysine production phases of a C. glutamicum fermentation. Fluorescently labeled cDNAs were prepared by reverse transcription using random hexamer primers and hybridized to the microarrays. To es...

  17. A CMOS Neural Interface for a Multichannel Vestibular Prosthesis.

    Hageman, Kristin N; Kalayjian, Zaven K; Tejada, Francisco; Chiang, Bryce; Rahman, Mehdi A; Fridman, Gene Y; Dai, Chenkai; Pouliquen, Philippe O; Georgiou, Julio; Della Santina, Charles C; Andreou, Andreas G

    2016-04-01

    We present a high-voltage CMOS neural-interface chip for a multichannel vestibular prosthesis (MVP) that measures head motion and modulates vestibular nerve activity to restore vision- and posture-stabilizing reflexes. This application specific integrated circuit neural interface (ASIC-NI) chip was designed to work with a commercially available microcontroller, which controls the ASIC-NI via a fast parallel interface to deliver biphasic stimulation pulses with 9-bit programmable current amplitude via 16 stimulation channels. The chip was fabricated in the ONSemi C5 0.5 micron, high-voltage CMOS process and can accommodate compliance voltages up to 12 V, stimulating vestibular nerve branches using biphasic current pulses up to 1.45±0.06 mA with durations as short as 10 μs/phase. The ASIC-NI includes a dedicated digital-to-analog converter for each channel, enabling it to perform complex multipolar stimulation. The ASIC-NI replaces discrete components that cover nearly half of the 2nd generation MVP (MVP2) printed circuit board, reducing the MVP system size by 48% and power consumption by 17%. Physiological tests of the ASIC-based MVP system (MVP2A) in a rhesus monkey produced reflexive eye movement responses to prosthetic stimulation similar to those observed when using the MVP2. Sinusoidal modulation of stimulus pulse rate from 68-130 pulses per second at frequencies from 0.1 to 5 Hz elicited appropriately-directed slow phase eye velocities ranging in amplitude from 1.9-16.7 (°)/s for the MVP2 and 2.0-14.2 (°)/s for the MVP2A. The eye velocities evoked by MVP2 and MVP2A showed no significant difference ( t-test, p=0.34), suggesting that the MVP2A achieves performance at least as good as the larger MVP2. PMID:25974945

  18. Quality assessment of ultra-thin CMOS sensors for the micro vertex detector of the CBM experiment at FAIR

    The Compressed Baryonic Matter experiment installed at the future FAIR facility will be equipped with a high-precision micro-vertex detector aiming at an outstanding primary and secondary vertex resolution. Highly granular, ultra-low material budget sensors, so-called Monolithic Active Pixel Sensors, manufactured at standard CMOS process, will be employed. Imperfections in CMOS process as well as further dicing and thinning procedures affect the yield of sensors to be mounted in the detector stations. To select sensors with the best characteristics, probe testing prior to integration is mandatory. handling and testing of 50-μm thin CMOS pixel sensors is non-standard. This contribution presents the dedicated tools and procedures, focusing on the question whether such thin devices can be efficiently and reliably probe-tested.

  19. The Impact of Photobleaching on Microarray Analysis

    Marcel von der Haar

    2015-09-01

    Full Text Available DNA-Microarrays have become a potent technology for high-throughput analysis of genetic regulation. However, the wide dynamic range of signal intensities of fluorophore-based microarrays exceeds the dynamic range of a single array scan by far, thus limiting the key benefit of microarray technology: parallelization. The implementation of multi-scan techniques represents a promising approach to overcome these limitations. These techniques are, in turn, limited by the fluorophores’ susceptibility to photobleaching when exposed to the scanner’s laser light. In this paper the photobleaching characteristics of cyanine-3 and cyanine-5 as part of solid state DNA microarrays are studied. The effects of initial fluorophore intensity as well as laser scanner dependent variables such as the photomultiplier tube’s voltage on bleaching and imaging are investigated. The resulting data is used to develop a model capable of simulating the expected degree of signal intensity reduction caused by photobleaching for each fluorophore individually, allowing for the removal of photobleaching-induced, systematic bias in multi-scan procedures. Single-scan applications also benefit as they rely on pre-scans to determine the optimal scanner settings. These findings constitute a step towards standardization of microarray experiments and analysis and may help to increase the lab-to-lab comparability of microarray experiment results.

  20. Challenges of nickel silicidation in CMOS technologies

    Breil, Nicolas [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Lavoie, Christian [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Ozcan, Ahmet [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Baumann, Frieder [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Klymko, Nancy [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Nummy, Karen [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Sun, Bing [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Jordan-Sweet, Jean [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Yu, Jian [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Zhu, Frank [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Narasimha, Shreesh [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States); Chudzik, Michael [IBM Semiconductor Research and Development Center (SRDC), East Fishkill, NY (United States)

    2015-04-01

    In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of the nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.

  1. Modulated CMOS camera for fluorescence lifetime microscopy.

    Chen, Hongtao; Holst, Gerhard; Gratton, Enrico

    2015-12-01

    Widefield frequency-domain fluorescence lifetime imaging microscopy (FD-FLIM) is a fast and accurate method to measure the fluorescence lifetime of entire images. However, the complexity and high costs involved in construction of such a system limit the extensive use of this technique. PCO AG recently released the first luminescence lifetime imaging camera based on a high frequency modulated CMOS image sensor, QMFLIM2. Here we tested and provide operational procedures to calibrate the camera and to improve the accuracy using corrections necessary for image analysis. With its flexible input/output options, we are able to use a modulated laser diode or a 20 MHz pulsed white supercontinuum laser as the light source. The output of the camera consists of a stack of modulated images that can be analyzed by the SimFCS software using the phasor approach. The nonuniform system response across the image sensor must be calibrated at the pixel level. This pixel calibration is crucial and needed for every camera settings, e.g. modulation frequency and exposure time. A significant dependency of the modulation signal on the intensity was also observed and hence an additional calibration is needed for each pixel depending on the pixel intensity level. These corrections are important not only for the fundamental frequency, but also for the higher harmonics when using the pulsed supercontinuum laser. With these post data acquisition corrections, the PCO CMOS-FLIM camera can be used for various biomedical applications requiring a large frame and high speed acquisition. PMID:26500051

  2. A Biologically Inspired CMOS Image Sensor

    Sarkar, Mukul

    2013-01-01

    Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

  3. Column-Parallel Single Slope ADC with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors

    Chen, Y; Theuwissen, A.J.P.; Chae, Y

    2011-01-01

    This paper presents a low noise CMOS image sensor (CIS) using 10/12 bit configurable column-parallel single slope ADCs (SS-ADCs) and digital correlated multiple sampling (CMS). The sensor used is a conventional 4T active pixel with a pinned-photodiode as photon detector. The test sensor was fabricated in a 0.18 colonm CMOS image sensor process from TSMC. The ADC nonlinearity measurement result shows totally 0.58% nonlinearity. Using the proposed column-parallel SS-ADC with digital CMS techniq...

  4. An analog CMOS chip set for neural networks with arbitrary topologies

    Lansner, John; Lehmann, Torsten

    1993-01-01

    An analog CMOS chip set for implementations of artificial neural networks (ANNs) has been fabricated and tested. The chip set consists of two cascadable chips: a neuron chip and a synapse chip. Neurons on the neuron chips can be interconnected at random via synapses on the synapse chips thus implementing an ANN with arbitrary topology. The neuron test chip contains an array of 4 neurons with well defined hyperbolic tangent activation functions which is implemented by using parasitic lateral b...

  5. Micropower CMOS Integrated Low-Noise Amplification, Filtering, and Digitization of Multimodal Neuropotentials

    Mollazadeh, Mohsen; Murari, Kartikeya; Cauwenberghs, Gert; Thakor, Nitish

    2009-01-01

    Electrical activity in the brain spans a wide range of spatial and temporal scales, requiring simultaneous recording of multiple modalities of neurophysiological signals in order to capture various aspects of brain state dynamics. Here, we present a 16-channel neural interface integrated circuit fabricated in a 0.5 μm 3M2P CMOS process for selective digital acquisition of biopotentials across the spectrum of neural signal modalities in the brain, ranging from single spike action potentials to...

  6. High-Throughput Screening of Substrate Specificity for Protein Tyrosine Phosphatases (PTPs) on Phosphopeptide Microarrays.

    Gao, Liqian; Lee, Su Seong; Chen, Jun; Sun, Hongyan; Zhao, Yuliang; Chai, Zhifang; Hu, Yi

    2016-01-01

    Phosphatases are a family of enzymes responsible for the dephosphorylation of biomolecules. Phosphatases play essential roles in cell cycle regulation, signal transduction, and cellular communication. In recent years, one type of phosphatases, protein tyrosine phosphatases (PTPs), emerges as important therapeutic targets for complex and devastating diseases. Nevertheless, the physiological roles, substrate specificity, and downstream targets for PTPs remain largely unknown. To demonstrate how microarrays can be applied to characterizing PTPs, we describe here a phosphopeptide microarray strategy for activity-based high-throughput screening of PTPs substrate specificity. This is followed by a kinetic microarray assay and microplate assay to determine the rate constants of dephosphorylation by PTPs. This microarray strategy has been successfully applied to identifying several potent and selective substrates against different PTPs. These substrates could be used to design potent and selective PTPs inhibitors in the future. PMID:26614076

  7. Imaging combined autoimmune and infectious disease microarrays

    Ewart, Tom; Raha, Sandeep; Kus, Dorothy; Tarnopolsky, Mark

    2006-09-01

    Bacterial and viral pathogens are implicated in many severe autoimmune diseases, acting through such mechanisms as molecular mimicry, and superantigen activation of T-cells. For example, Helicobacter pylori, well known cause of stomach ulcers and cancers, is also identified in ischaemic heart disease (mimicry of heat shock protein 65), autoimmune pancreatitis, systemic sclerosis, autoimmune thyroiditis (HLA DRB1*0301 allele susceptibility), and Crohn's disease. Successful antibiotic eradication of H.pylori often accompanies their remission. Yet current diagnostic devices, and test-limiting cost containment, impede recognition of the linkage, delaying both diagnosis and therapeutic intervention until the chronic debilitating stage. We designed a 15 minute low cost 39 antigen microarray assay, combining autoimmune, viral and bacterial antigens1. This enables point-of-care serodiagnosis and cost-effective narrowly targeted concurrent antibiotic and monoclonal anti-T-cell and anti-cytokine immunotherapy. Arrays of 26 pathogen and 13 autoimmune antigens with IgG and IgM dilution series were printed in triplicate on epoxysilane covalent binding slides with Teflon well masks. Sera diluted 1:20 were incubated 10 minutes, washed off, anti-IgG-Cy3 (green) and anti-IgM-Dy647 (red) were incubated for 5 minutes, washed off and the slide was read in an ArrayWoRx(e) scanning CCD imager (Applied Precision, Issaquah, WA). As a preliminary model for the combined infectious disease-autoimmune diagnostic microarray we surveyed 98 unidentified, outdated sera that were discarded after Hepatitis B antibody testing. In these, significant IgG or IgM autoantibody levels were found: dsDNA 5, ssDNA 11, Ro 2, RNP 7, SSB 4, gliadin 2, thyroglobulin 13 cases. Since control sera showed no autoantibodies, the high frequency of anti-DNA and anti-thyroglobulin antibodies found in infected sera lend increased support for linkage of infection to subsequent autoimmune disease. Expansion of the antigen

  8. PMD: A Resource for Archiving and Analyzing Protein Microarray data

    Zhaowei Xu; Likun Huang; Hainan Zhang; Yang Li; Shujuan Guo; Nan Wang; Shi-hua Wang; Ziqing Chen; Jingfang Wang; Sheng-ce Tao

    2016-01-01

    Protein microarray is a powerful technology for both basic research and clinical study. However, because there is no database specifically tailored for protein microarray, the majority of the valuable original protein microarray data is still not publically accessible. To address this issue, we constructed Protein Microarray Database (PMD), which is specifically designed for archiving and analyzing protein microarray data. In PMD, users can easily browse and search the entire database by expe...

  9. Column-Parallel Single Slope ADC with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors

    Chen, Y.; Theuwissen, A.J.P.; Chae, Y.

    2011-01-01

    This paper presents a low noise CMOS image sensor (CIS) using 10/12 bit configurable column-parallel single slope ADCs (SS-ADCs) and digital correlated multiple sampling (CMS). The sensor used is a conventional 4T active pixel with a pinned-photodiode as photon detector. The test sensor was fabricat

  10. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

    Jose Luis Muñoz-Gamarra

    2016-02-01

    Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

  11. Beyond microarrays: Finding key transcription factors controlling signal transduction pathways

    Kel, Alexdander; Voss, Nico; Jauregui, Ruy; Kel-Margoulis, Olga; Wingender, Edgar

    2006-01-01

    Background Massive gene expression changes in different cellular states measured by microarrays, in fact, reflect just an "echo" of real molecular processes in the cells. Transcription factors constitute a class of the regulatory molecules that typically require posttranscriptional modifications or ligand binding in order to exert their function. Therefore, such important functional changes of transcription factors are not directly visible in the microarray experiments. Results We developed a novel approach to find key transcription factors that may explain concerted expression changes of specific components of the signal transduction network. The approach aims at revealing evidence of positive feedback loops in the signal transduction circuits through activation of pathway-specific transcription factors. We demonstrate that promoters of genes encoding components of many known signal transduction pathways are enriched by binding sites of those transcription factors that are endpoints of the considered pathways. Application of the approach to the microarray gene expression data on TNF-alpha stimulated primary human endothelial cells helped to reveal novel key transcription factors potentially involved in the regulation of the signal transduction pathways of the cells. Conclusion We developed a novel computational approach for revealing key transcription factors by knowledge-based analysis of gene expression data with the help of databases on gene regulatory networks (TRANSFAC® and TRANSPATH®). The corresponding software and databases are available at . PMID:17118134

  12. Generalization of DNA microarray dispersion properties: microarray equivalent of t-distribution

    Novak, Jaroslav P; Kim, Seon-Young; Xu, Jun;

    2006-01-01

    BACKGROUND: DNA microarrays are a powerful technology that can provide a wealth of gene expression data for disease studies, drug development, and a wide scope of other investigations. Because of the large volume and inherent variability of DNA microarray data, many new statistical methods have b...

  13. Universal ligation-detection-reaction microarray applied for compost microbes

    Romantschuk Martin

    2008-12-01

    Full Text Available Abstract Background Composting is one of the methods utilised in recycling organic communal waste. The composting process is dependent on aerobic microbial activity and proceeds through a succession of different phases each dominated by certain microorganisms. In this study, a ligation-detection-reaction (LDR based microarray method was adapted for species-level detection of compost microbes characteristic of each stage of the composting process. LDR utilises the specificity of the ligase enzyme to covalently join two adjacently hybridised probes. A zip-oligo is attached to the 3'-end of one probe and fluorescent label to the 5'-end of the other probe. Upon ligation, the probes are combined in the same molecule and can be detected in a specific location on a universal microarray with complementary zip-oligos enabling equivalent hybridisation conditions for all probes. The method was applied to samples from Nordic composting facilities after testing and optimisation with fungal pure cultures and environmental clones. Results Probes targeted for fungi were able to detect 0.1 fmol of target ribosomal PCR product in an artificial reaction mixture containing 100 ng competing fungal ribosomal internal transcribed spacer (ITS area or herring sperm DNA. The detection level was therefore approximately 0.04% of total DNA. Clone libraries were constructed from eight compost samples. The LDR microarray results were in concordance with the clone library sequencing results. In addition a control probe was used to monitor the per-spot hybridisation efficiency on the array. Conclusion This study demonstrates that the LDR microarray method is capable of sensitive and accurate species-level detection from a complex microbial community. The method can detect key species from compost samples, making it a basis for a tool for compost process monitoring in industrial facilities.

  14. Small-area and compact CMOS emulator circuit for CMOS/nanoscale memristor co-design

    Shin, SangHak; Choi, Jun-Myung; Cho, Seongik; Min, Kyeong-Sik

    2013-01-01

    In this paper, a CMOS emulator circuit that can reproduce nanoscale memristive behavior is proposed. The proposed emulator circuit can mimic the pinched hysteresis loops of nanoscale memristor memory's current-voltage relationship without using any resistor array, complicated circuit blocks, etc. that may occupy very large layout area. Instead of using a resistor array, other complicated circuit blocks, etc., the proposed emulator circuit can describe the nanoscale memristor's current-voltage...

  15. PALM and STORM: Into large fields and high-throughput microscopy with sCMOS detectors.

    Almada, Pedro; Culley, Siân; Henriques, Ricardo

    2015-10-15

    Single Molecule Localization Microscopy (SMLM) techniques such as Photo-Activation Localization Microscopy (PALM) and Stochastic Optical Reconstruction Microscopy (STORM) enable fluorescence microscopy super-resolution: the overcoming of the resolution barrier imposed by the diffraction of light. These techniques are based on acquiring hundreds or thousands of images of single molecules, locating them and reconstructing a higher-resolution image from the high-precision localizations. These methods generally imply a considerable trade-off between imaging speed and resolution, limiting their applicability to high-throughput workflows. Recent advancements in scientific Complementary Metal-Oxide Semiconductor (sCMOS) camera sensors and localization algorithms reduce the temporal requirements for SMLM, pushing it toward high-throughput microscopy. Here we outline the decisions researchers face when considering how to adapt hardware on a new system for sCMOS sensors with high-throughput in mind. PMID:26079924

  16. CMOS On-Chip Optoelectronic Neural Interface Device with Integrated Light Source for Optogenetics

    A novel optoelectronic neural interface device is proposed for target applications in optogenetics for neural science. The device consists of a light emitting diode (LED) array implemented on a CMOS image sensor for on-chip local light stimulation. In this study, we designed a suitable CMOS image sensor equipped with on-chip electrodes to drive the LEDs, and developed a device structure and packaging process for LED integration. The prototype device produced an illumination intensity of approximately 1 mW with a driving current of 2.0 mA, which is expected to be sufficient to activate channelrhodopsin (ChR2). We also demonstrated the functions of light stimulation and on-chip imaging using a brain slice from a mouse as a target sample.

  17. Characterization and performance studies of high-voltage CMOS based pixel sensors

    Smaranda, Dumitru Dan

    2015-01-01

    The high luminosity upgrade of the LHC will push the limits for detectors, specially the silicon trackers which are closest to the interaction point. The ATLAS CMOS Sensor R&D efort is investigating a new technology using high-voltage CMOS processes for producing pixel and strip sensors. In contrast to the currently used technology these devices implement active electronics on the sensor itself, offering a multitude of tuning parameters for achieving the best performance. My summer project revolved around characterising existing samples along with assembling and debugging hardware required for their improvement and functionality. Other tasks involved writing communication protocols using pyBAR to remotely control injection circuitry on a GPAC card, and helping various members of the group with data collection and analysis. Through the summer student programme I have had the opportunity to be part of a vibrant scientic community at the forefront of research, to create bonds with fellow students from univ...

  18. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project.

    Huffman, B. T.; Affolder, A.; Arndt, K.; Bates, R.; Benoit, M.; Di Bello, F.; Blue, A.; Bortoletto, D.; Buckland, M.; Buttar, C.; Caragiulo, P.; Das, D.; Dopke, J.; Dragone, A.; Ehrler, F.; Fadeyev, V.; Galloway, Z.; Grabas, H.; Gregor, I. M.; Grenier, P.; Grillo, A.; Hoeferkamp, M.; Hommels, L. B. A.; John, J.; Kanisauskas, K.; Kenney, C.; Kramberger, J.; Liang, Z.; Mandić, I.; Maneuski, D.; Martinez-Mckinney, F.; McMahon, S.; Meng, L.; Mikuž, M.; Muenstermann, D.; Nickerson, R.; Perić, I.; Phillips, P.; Plackett, R.; Rubbo, F.; Segal, J.; Seidel, S.; Seiden, A.; Shipsey, I.; Song, W.; Stanitzki, M.; Su, D.; Tamma, C.; Turchetta, R.; Vigani, L.; Volk, J.; Wang, R.; Warren, M.; Wilson, F.; Worm, S.; Xiu, Q.; Zhang, J.; Zhu, H.

    2016-02-01

    The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with the AMS H35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.

  19. Low Power Design of High Speed CMOS Pulse Stream Neuron Circuit

    陈继伟; 石秉学

    2000-01-01

    A new pulse stream neuron circuit is presented, which can be obtained in the digital CMOS process and combines both the merits of digital circuits and analog ones. The output is expressed by the frequency of the pulses with transfer characteristic, which is correspondent with the ideal sigmoid curve perfectly. Moreover, the pulse-active strategy is introduced into the design of this CMOS pulse stream neuron circuit for the first time in order to reduce the power dissipation, which is applicable to the low-power design of mixed-signal circuits,too. A simple technical process and compact architecture make this circuit work at a higher speed and with lower power dissipation and smaller area.

  20. Heterogeneous CMOS/memristor hardware neural networks for real-time target classification

    Merkel, Cory; Kudithipudi, Dhireesha; Ptucha, Ray

    2014-05-01

    The advent of nanoscale metal-insulator-metal (MIM) structures with memristive properties has given birth to a new generation of hardware neural networks based on CMOS/memristor integration (CMHNNs). The advantage of the CMHNN paradigm compared to a pure CMOS approach lies in the multi-faceted functionality of memristive devices: They can efficiently store neural network configurations (weights and activation function parameters) via non-volatile, quasi-analog resistance states. They also provide high-density interconnects between neurons when integrated into 2-D and 3-D crossbar architectures. In this work, we explore the combination of CMHNN classifiers with manifold learning to reduce the dimensionality of CMHNN inputs. This allows the size of the CMHNN to be reduced significantly (by ≍ 97%). We tested the proposed system using the Caltech101 database and were able to achieve classification accuracies within ≍ 1:5% of those produced by a traditional support vector machine.

  1. High-speed multicolor photometry with CMOS cameras

    Pokhvala, S M; Reshetnyk, V M

    2012-01-01

    We present the results of testing the commercial digital camera Nikon D90 with a CMOS sensor for high-speed photometry with a small telescope Celestron 11" on Peak Terskol. CMOS sensor allows to perform photometry in 3 filters simultaneously that gives a great advantage compared with monochrome CCD detectors. The Bayer BGR color system of CMOS sensors is close to the Johnson BVR system. The results of testing show that we can measure the stars up to V $\\simeq$ 14 with the precision of 0.01 mag. Stars up to magnitude V $\\sim$ 10 can shoot at 24 frames per second in the video mode.

  2. Development of a CMOS process using high energy ion implantation

    The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

  3. Ink-Jet Printed CMOS Electronics from Oxide Semiconductors.

    Garlapati, Suresh Kumar; Baby, Tessy Theres; Dehm, Simone; Hammad, Mohammed; Chakravadhanula, Venkata Sai Kiran; Kruk, Robert; Hahn, Horst; Dasgupta, Subho

    2015-08-01

    Complementary metal oxide semiconductor (CMOS) technology with high transconductance and signal gain is mandatory for practicable digital/analog logic electronics. However, high performance all-oxide CMOS logics are scarcely reported in the literature; specifically, not at all for solution-processed/printed transistors. As a major step toward solution-processed all-oxide electronics, here it is shown that using a highly efficient electrolyte-gating approach one can obtain printed and low-voltage operated oxide CMOS logics with high signal gain (≈21 at a supply voltage of only 1.5 V) and low static power dissipation. PMID:25867029

  4. High-Speed Low Power Design in CMOS

    Ghani, Arfan; Usmani, S. H.; Stassen, Flemming

    2004-01-01

    Static CMOS design displays benefits such as low power consumption, dominated by dynamic power consumption. In contrast, MOS Current Mode Logic (MCML) displays static rather than dynamic power consumption. High-speed low-power design is one of the many application areas in VLSI that require...... appropriate domains of performance and power requirements in which MCML presents benefits over standard CMOS. An optimized cell library is designed and implemented in both CMOS and MCML in order to make a comparison with reference to speed and power. Much more time is spent in order to nderstand the...

  5. Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

    Saffih, Faycal

    2012-06-01

    In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

  6. rapmad: Robust analysis of peptide microarray data

    Rothermel Andrée

    2011-08-01

    Full Text Available Abstract Background Peptide microarrays offer an enormous potential as a screening tool for peptidomics experiments and have recently seen an increased field of application ranging from immunological studies to systems biology. By allowing the parallel analysis of thousands of peptides in a single run they are suitable for high-throughput settings. Since data characteristics of peptide microarrays differ from DNA oligonucleotide microarrays, computational methods need to be tailored to these specifications to allow a robust and automated data analysis. While follow-up experiments can ensure the specificity of results, sensitivity cannot be recovered in later steps. Providing sensitivity is thus a primary goal of data analysis procedures. To this end we created rapmad (Robust Alignment of Peptide MicroArray Data, a novel computational tool implemented in R. Results We evaluated rapmad in antibody reactivity experiments for several thousand peptide spots and compared it to two existing algorithms for the analysis of peptide microarrays. rapmad displays competitive and superior behavior to existing software solutions. Particularly, it shows substantially improved sensitivity for low intensity settings without sacrificing specificity. It thereby contributes to increasing the effectiveness of high throughput screening experiments. Conclusions rapmad allows the robust and sensitive, automated analysis of high-throughput peptide array data. The rapmad R-package as well as the data sets are available from http://www.tron-mz.de/compmed.

  7. IMEC pushes the limits of CMOS

    George Marsh

    2002-06-01

    Visionary stuff, but although the day of the cyborg may still be some way off, IMEC (Inter-University MicroElectronics Centre — Europe’s leading independent microelectronics research organization — sees its role as expediting some aspects of this future. This means, inter alia, a dedication to maintaining the currency of Moore’s Law, in the belief that this can continue for several years yet before fundamental limits impose insurmountable barriers. Success will require further extension of the boundaries of complementary metal oxide silicon (CMOS, that backbone of mainstream electronic technology. Materials, both the manipulation of existing and development of new, are germane to this, as Materials Today discovered on a recent visit.

  8. A microarray system for Y chromosomal and mitochondrial single nucleotide polymorphism analysis in chimpanzee populations.

    Andrés, Olga; Rönn, Ann-Charlotte; Bonhomme, Maxime; Kellermann, Thomas; Crouau-Roy, Brigitte; Doxiadis, Gaby; Verschoor, Ernst J; Goossens, Benoît; Domingo-Roura, Xavier; Bruford, Michael W; Bosch, Montserrat; Syvänen, Ann-Christine

    2008-05-01

    Chimpanzee populations are diminishing as a consequence of human activities, and as a result this species is now endangered. In the context of conservation programmes, genetic data can add vital information, for instance on the genetic diversity and structure of threatened populations. Single nucleotide polymorphisms (SNP) are biallelic markers that are widely used in human molecular studies and can be implemented in efficient microarray systems. This technology offers the potential of robust, multiplexed SNP genotyping at low reagent cost in other organisms than humans, but it is not commonly used yet in wild population studies. Here, we describe the characterization of new SNPs in Y-chromosomal intronic regions in chimpanzees and also identify SNPs from mitochondrial genes, with the aim of developing a microarray system that permits the simultaneous study of both paternal and maternal lineages. Our system consists of 42 SNPs for the Y chromosome and 45 SNPs for the mitochondrial genome. We demonstrate the applicability of this microarray in a captive population where genotypes accurately reflected its large pedigree. Two wild-living populations were also analysed and the results show that the microarray will be a useful tool alongside microsatellite markers, since it supplies complementary information about population structure and ecology. SNP genotyping using microarray technology, therefore, is a promising approach and may become an essential tool in conservation genetics to help in the management and study of captive and wild-living populations. Moreover, microarrays that combine SNPs from different genomic regions could replace microsatellite typing in the future. PMID:21585830

  9. Depleted CMOS pixels for LHC proton-proton experiments

    Wermes, N.

    2016-07-01

    While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

  10. Discovering biological progression underlying microarray samples.

    Peng Qiu

    2011-04-01

    Full Text Available In biological systems that undergo processes such as differentiation, a clear concept of progression exists. We present a novel computational approach, called Sample Progression Discovery (SPD, to discover patterns of biological progression underlying microarray gene expression data. SPD assumes that individual samples of a microarray dataset are related by an unknown biological process (i.e., differentiation, development, cell cycle, disease progression, and that each sample represents one unknown point along the progression of that process. SPD aims to organize the samples in a manner that reveals the underlying progression and to simultaneously identify subsets of genes that are responsible for that progression. We demonstrate the performance of SPD on a variety of microarray datasets that were generated by sampling a biological process at different points along its progression, without providing SPD any information of the underlying process. When applied to a cell cycle time series microarray dataset, SPD was not provided any prior knowledge of samples' time order or of which genes are cell-cycle regulated, yet SPD recovered the correct time order and identified many genes that have been associated with the cell cycle. When applied to B-cell differentiation data, SPD recovered the correct order of stages of normal B-cell differentiation and the linkage between preB-ALL tumor cells with their cell origin preB. When applied to mouse embryonic stem cell differentiation data, SPD uncovered a landscape of ESC differentiation into various lineages and genes that represent both generic and lineage specific processes. When applied to a prostate cancer microarray dataset, SPD identified gene modules that reflect a progression consistent with disease stages. SPD may be best viewed as a novel tool for synthesizing biological hypotheses because it provides a likely biological progression underlying a microarray dataset and, perhaps more importantly, the

  11. Pineal function: impact of microarray analysis

    Klein, David C; Bailey, Michael J; Carter, David A;

    2009-01-01

    retina and has provided reason to explore new avenues of study including intracellular signaling, signal transduction, transcriptional cascades, thyroid/retinoic acid hormone signaling, metal biology, RNA splicing, and the role the pineal gland plays in the immune/inflammation response. The new......Microarray analysis has provided a new understanding of pineal function by identifying genes that are highly expressed in this tissue relative to other tissues and also by identifying over 600 genes that are expressed on a 24-h schedule. This effort has highlighted surprising similarity to the...... foundation that microarray analysis has provided will broadly support future research on pineal function....

  12. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Fangming Deng; Yigang He; Chaolong Zhang; Wei Feng

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate ...

  13. Delta Doping High Purity CCDs and CMOS for LSST

    Blacksberg, Jordana; Nikzad, Shouleh; Hoenk, Michael; Elliott, S. Tom; Bebek, Chris; Holland, Steve; Kolbe, Bill

    2006-01-01

    A viewgraph presentation describing delta doping high purity CCD's and CMOS for LSST is shown. The topics include: 1) Overview of JPL s versatile back-surface process for CCDs and CMOS; 2) Application to SNAP and ORION missions; 3) Delta doping as a back-surface electrode for fully depleted LBNL CCDs; 4) Delta doping high purity CCDs for SNAP and ORION; 5) JPL CMP thinning process development; and 6) Antireflection coating process development.

  14. A Low Power Low Voltage High Performance CMOS Current Mirror

    Sirish Rao,; Sampath Kumar V

    2015-01-01

    The current mirrors are one of the most important circuits in designing the analog and mixed-mode circuit. A low power and low voltage high-performance CMOS current mirror with optimized input and output resistance are presented in this paper. SPICE simulations confirm the high-performance CMOS current mirror with power supply close to the threshold voltage of the transistor. In this paper, for achieving the low input resistance and a very high output resistance, the combination o...

  15. RF CMOS Integrated Circuit: History, Current Status and Future Prospects

    Ishihara, Noboru; Amakawa, Shuhei; Masu, Kazuya

    2011-01-01

    As great advancements have been made in CMOS process technology over the past 20 years, RF CMOS circuits operating in the microwave band have rapidly developed from component circuit levels to multiband/multimode transceiver levels. In the next ten years, it is highly likely that the following devices will be realized: (i) versatile transceivers such as those used in software-defined radios (SDR), cognitive radios (CR), and reconfigurable radios (RR); (ii) systems that operate in the millimet...

  16. Integrating security solutions to support nanoCMOS electronics research

    Sinnott, R.O.; Bayliss, C.; T. Doherty; Martin, D.; Millar, C.; Stewart, G; Watt, J; A. Asenov; Roy, G.; S Roy; Davenhall, C.; Harbulot, B.; Jones, M

    2008-01-01

    The UK Engineering and Physical Sciences Research Council (EPSRC) funded Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is developing a research infrastructure for collaborative electronics research across multiple institutions in the UK with especially strong industrial and commercial involvement. Unlike other domains, the electronics industry is driven by the necessity of protecting the intellectual property of the data, designs and software associated with next generation...

  17. CMOS integration of inkjet-printed graphene for humidity sensing

    Santra, S.; Hu, G.; Howe, R. C. T.; De Luca, A.; Ali, S. Z.; Udrea, F.; Gardner, J. W.; S. K. Ray; Guha, P. K.; Hasan, T.

    2015-01-01

    We report on the integration of inkjet-printed graphene with a CMOS micro-electro-mechanical-system (MEMS) microhotplate for humidity sensing. The graphene ink is produced via ultrasonic assisted liquid phase exfoliation in isopropyl alcohol (IPA) using polyvinyl pyrrolidone (PVP) polymer as the stabilizer. We formulate inks with different graphene concentrations, which are then deposited through inkjet printing over predefined interdigitated gold electrodes on a CMOS microhotplate. The graph...

  18. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  19. Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

    Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2012-04-01

    In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

  20. Low-dose performance of wafer-scale CMOS-based X-ray detectors

    Maes, Willem H.; Peters, Inge M.; Smit, Chiel; Kessener, Yves; Bosiers, Jan

    2015-03-01

    Compared to published amorphous-silicon (TFT) based X-ray detectors, crystalline silicon CMOS-based active-pixel detectors exploit the benefits of low noise, high speed, on-chip integration and featuring offered by CMOS technology. This presentation focuses on the specific advantage of high image quality at very low dose levels. The measurement of very low dose performance parameters like Detective Quantum Efficiency (DQE) and Noise Equivalent Dose (NED) is a challenge by itself. Second-order effects like defect pixel behavior, temporal and quantization noise effects, dose measurement accuracy and limitation of the x-ray source settings will influence the measurements at very low dose conditions. Using an analytical model to predict the low dose behavior of a detector from parameters extracted from shot-noise limited dose levels is presented. These models can also provide input for a simulation environment for optimizing the performance of future detectors. In this paper, models for predicting NED and the DQE at very low dose are compared to measurements on different CMOS detectors. Their validity for different sensor and optical stack combinations as well as for different x-ray beam conditions was validated.

  1. Radiation damage studies on STAR250 CMOS sensor at 300 keV for electron microscopy

    Faruqi, A. R.; Henderson, R.; Holmes, J.

    2006-09-01

    There is a pressing need for better electronic detectors to replace film for recording high-resolution images using electron cryomicroscopy. Our previous work has shown that direct electron detection in CMOS sensors is promising in terms of resolution and efficiency at 120 keV [A.R. Faruqi, R. Henderson, M. Prydderch, R. Turchetta, P. Allport, A. Evans, Nucl. Instr. and Meth. 546 (2005) 170], but in addition, the detectors must not be damaged by the electron irradiation. We now present new measurements on the radiation tolerance of a 25 μm pitch CMOS active-pixel sensor, the STAR250, which was designed by FillFactory using radiation-hard technology for space applications. Our tests on the STAR250 aimed to establish the imaging performance at 300 keV following irradiation. The residual contrast, measured on shadow images of a 300 mesh grid, was >80% after corrections for increased dark current, following irradiation with up to 5×10 7 electrons/pixel (equivalent to 80,000 electron/μm 2). A CMOS sensor with this degree of radiation tolerance would survive a year of normal usage for low-dose electron cryomicroscopy, which is a very useful advance.

  2. Gamma-ray irradiation tests of CMOS sensors used in imaging techniques

    Cappello Salvatore G.

    2014-01-01

    Full Text Available Technologically-enhanced electronic image sensors are used in various fields as diagnostic techniques in medicine or space applications. In the latter case the devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same equipment. In this paper we report the results of gamma-ray irradiation tests on CMOS image sensors simulating the space radiation over a long time period. Gamma-ray irradiation tests were carried out by means of IGS-3 gamma irradiation facility of Palermo University, based on 60Co sources with different activities. To reduce the dose rate and realize a narrow gamma-ray beam, a lead-collimation system was purposely built. It permits to have dose rate values less than 10 mGy/s and to irradiate CMOS Image Sensors during operation. The total ionizing dose to CMOS image sensors was monitored in-situ, during irradiation, up to 1000 Gy and images were acquired every 25 Gy. At the end of the tests, the sensors continued to operate despite a background noise and some pixels were completely saturated. These effects, however, involve isolated pixels and therefore, should not affect the image quality.

  3. AN OVERVIEW OF POWER DISSIPATION AND CONTROL TECHNIQUES IN CMOS TECHNOLOGY

    N. B. ROMLI

    2015-03-01

    Full Text Available Total power dissipation in CMOS circuits has become a huge challenging in current semiconductor industry due to the leakage current and the leakage power. The exponential growth of both static and dynamic power dissipations in any CMOS process technology option has increased the cost and efficiency of the system. Technology options are used for the execution specifications and usually it depends on the optimisation and the performance constraints over the chip. This article reviews the relevant researches of the source or power dissipation, the mechanism to reduce the dynamic power dissipation as well as static power dissipation and an overview of various circuit techniques to control them. Important device parameters including voltage threshold and switching capacitance impact to the circuit performance in lowering both dynamic and static power dissipation are presented. The demand for the reduction of power dissipation in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on power dissipation and control techniques.

  4. An investigation of medical radiation detection using CMOS image sensors in smartphones

    Kang, Han Gyu; Song, Jae-Jun; Lee, Kwonhee; Nam, Ki Chang; Hong, Seong Jong; Kim, Ho Chul

    2016-07-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  5. Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

    Zhang, Y.; Hu-Guo, C.; Husson, D.; Hu, Y. [Institut Pluridisplinaire Hubert Curien IPHC, Univ. of Strasbourg, CNRS/IN2P3, 23 Rue du Loess, 67037 Strasbourg (France)

    2011-07-01

    Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial points of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)

  6. Applications of the Integrated High-Performance CMOS Image Sensor to Range Finders — from Optical Triangulation to the Automotive Field

    Joe-Air Jiang

    2008-03-01

    Full Text Available With their significant features, the applications of complementary metal-oxidesemiconductor (CMOS image sensors covers a very extensive range, from industrialautomation to traffic applications such as aiming systems, blind guidance, active/passiverange finders, etc. In this paper CMOS image sensor-based active and passive rangefinders are presented. The measurement scheme of the proposed active/passive rangefinders is based on a simple triangulation method. The designed range finders chieflyconsist of a CMOS image sensor and some light sources such as lasers or LEDs. Theimplementation cost of our range finders is quite low. Image processing software to adjustthe exposure time (ET of the CMOS image sensor to enhance the performance oftriangulation-based range finders was also developed. An extensive series of experimentswere conducted to evaluate the performance of the designed range finders. From theexperimental results, the distance measurement resolutions achieved by the active rangefinder and the passive range finder can be better than 0.6% and 0.25% within themeasurement ranges of 1 to 8 m and 5 to 45 m, respectively. Feasibility tests onapplications of the developed CMOS image sensor-based range finders to the automotivefield were also conducted. The experimental results demonstrated that our range finders arewell-suited for distance measurements in this field.

  7. A CMOS charge preamplifier for silicon drift detectors with on-chip JFET and feedback capacitor

    In the framework of the Silicon Drift Detector for Hadronic Atom Research by Timing Application (Siddharta) project, we are developing the CMOS readout electronics for the analog processing of about 200 large-area (1 cm2) silicon drift detectors (SDDs). The readout electronics have to provide an energy resolution better than 150 eV at 6 keV, when used with SDDs, and high long-term peak stability, in the order of few eVs, with respect to background variations during the experiment. The high-stability requirement imposes the choice of a charge preamplifier configuration as front-end stage. In our case, the peculiarity of the preamplifier is that the input JFET and the feedback capacitor are integrated in the detector chip, separated by the remaining part of the circuit, which is several centimeters away. In this work we describe a CMOS charge preamplifier designed to meet these specific constraints and characterized by the use of a drain feedback technique for the reset of the leakage current and signal charge. To this aim, a low-frequency loop is designed to actively control the drain of the SDD-JFET with full compatibility with the supplies limits of the CMOS technology. Because of the unpredictable value of the feedback capacitor, the circuit foresees the possibility to externally adjust the preamplifier decay time to achieve the correct pole-zero compensation with the fixed zero of the shaping amplifier. The main features of the circuit, as well as the results of the experimental characterization of a first prototype realized in the 0.35 μm CMOS AMS technology, are presented in the paper

  8. Poly-SiGe for MEMS-above-CMOS sensors

    Gonzalez Ruiz, Pilar; Witvrouw, Ann

    2014-01-01

    Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

  9. Advancement of CMOS Doping Technology in an External Development Framework

    Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

    2011-01-01

    The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

  10. Analysis of porcine MHC using microarrays.

    Gao, Yu; Wahlberg, Per; Marthey, Sylvain; Esquerré, Diane; Jaffrézic, Florence; Lecardonnel, Jérome; Hugot, Karine; Rogel-Gaillard, Claire

    2012-07-15

    The major histocompatibility complex (MHC) in Mammals is one of the most gene dense regions of the genome and contains the polymorphic histocompatibility gene families known to be involved in pathogen response and control of auto-immunity. The MHC is a complex genetic system that provides an interesting model system to study genome expression regulation and genetic diversity at the megabase scale. The pig MHC or SLA (Swine Leucocyte Antigen) complex spans 2.4 megabases and 151 loci have been annotated. We will review key results from previous RNA expression studies using microarrays containing probes specific to annotated loci within SLA and in addition present novel data obtained using high-density tiling arrays encompassing the whole SLA complex. We have focused on transcriptome modifications of porcine peripheral blood mononuclear cells stimulated with a mixture of phorbol myristate acetate and ionomycin known to activate B and T cell proliferation. Our results show that numerous loci mapping to the SLA complex are affected by the treatment. A general decreased level of expression for class I and II genes and an up-regulation of genes involved in peptide processing and transport were observed. Tiling array-based experiments contributed to refined gene annotations as presented for one SLA class I gene referred to as SLA-11. In conclusion, high-density tiling arrays can serve as an excellent tool to draw comprehensive transcription maps, and improve genome annotations for the SLA complex. We are currently studying their relevance to characterize SLA genetic diversity in combination with high throughput next generation sequencing. PMID:21561666

  11. Microarray Я US: a user-friendly graphical interface to Bioconductor tools that enables accurate microarray data analysis and expedites comprehensive functional analysis of microarray results

    Dai Yilin

    2012-06-01

    Full Text Available Abstract Background Microarray data analysis presents a significant challenge to researchers who are unable to use the powerful Bioconductor and its numerous tools due to their lack of knowledge of R language. Among the few existing software programs that offer a graphic user interface to Bioconductor packages, none have implemented a comprehensive strategy to address the accuracy and reliability issue of microarray data analysis due to the well known probe design problems associated with many widely used microarray chips. There is also a lack of tools that would expedite the functional analysis of microarray results. Findings We present Microarray Я US, an R-based graphical user interface that implements over a dozen popular Bioconductor packages to offer researchers a streamlined workflow for routine differential microarray expression data analysis without the need to learn R language. In order to enable a more accurate analysis and interpretation of microarray data, we incorporated the latest custom probe re-definition and re-annotation for Affymetrix and Illumina chips. A versatile microarray results output utility tool was also implemented for easy and fast generation of input files for over 20 of the most widely used functional analysis software programs. Conclusion Coupled with a well-designed user interface, Microarray Я US leverages cutting edge Bioconductor packages for researchers with no knowledge in R language. It also enables a more reliable and accurate microarray data analysis and expedites downstream functional analysis of microarray results.

  12. Measurements of Si hybrid CMOS x-ray detector characteristics

    Bongiorno, Stephen D.; Falcone, Abraham D.; Burrows, David N.; Cook, Robert

    2010-07-01

    The recent development of active pixel sensors as X-Ray focal plane arrays will place them in contention with CCDs on future satellite missions. Penn State University (PSU) is working with Teledyne Imaging Sensors (TIS) to develop X-Ray Hybrid CMOS devices (HCDs), a type of active pixel sensor with fast frame rates, adaptable readout timing and geometry, low power consumption, and inherent radiation hardness. CCDs have been used with great success on the current generation of X-Ray telescopes (e.g. Chandra, XMM, Suzaku, and Swift). However, their bucket-brigade readout architecture, which transfers charge across the chip with discrete component readout electronics, results in clockrate limited readout speeds that cause pileup (saturation) of bright sources and an inherent susceptibility to radiation induced displacement damage that limits mission lifetime. In contrast, HCDs read pixels through the detector substrate with low power, on-chip readout integrated circuits. Faster frame rates, achieved with adaptable readout timing and geometry, will allow the next generation's larger effective area telescopes to observe brighter sources free of pileup. In HCDs, radiation damaged lattice sites affect a single pixel instead of an entire row. The PSU X-ray group is currently testing 4 Teledyne HCDs, with low cross-talk CTIA devices in development. We will report laboratory measurements of HCD readnoise, interpixel-capacitance and its impact on event selection, linearity, and energy resolution as a function of energy.

  13. An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μ m TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when ...

  14. Microarray data mining with visual programming

    Xu, Qikai; Curk, Tomaž; Shaulsky, Gad; Petrovič, Uroš; Bratko, Ivan; Zupan, Blaž; Demšar, Janez; Leban, Gregor

    2005-01-01

    Visual programming offers an intuitive means of combining known analysis and visualization methods into powerful applications. The system presented here enables users who are not programmers to manage microarray and genomic data flow and to customize their analyses by combining common data analysis tools to fit their needs.

  15. Raman-based microarray readout: a review.

    Haisch, Christoph

    2016-07-01

    For a quarter of a century, microarrays have been part of the routine analytical toolbox. Label-based fluorescence detection is still the commonest optical readout strategy. Since the 1990s, a continuously increasing number of label-based as well as label-free experiments on Raman-based microarray readout concepts have been reported. This review summarizes the possible concepts and methods and their advantages and challenges. A common label-based strategy is based on the binding of selective receptors as well as Raman reporter molecules to plasmonic nanoparticles in a sandwich immunoassay, which results in surface-enhanced Raman scattering signals of the reporter molecule. Alternatively, capture of the analytes can be performed by receptors on a microarray surface. Addition of plasmonic nanoparticles again leads to a surface-enhanced Raman scattering signal, not of a label but directly of the analyte. This approach is mostly proposed for bacteria and cell detection. However, although many promising readout strategies have been discussed in numerous publications, rarely have any of them made the step from proof of concept to a practical application, let alone routine use. Graphical Abstract Possible realization of a SERS (Surface-Enhanced Raman Scattering) system for microarray readout. PMID:26973235

  16. Diagnostic Oligonucleotide Microarray Fingerprinting of Bacillus Isolates

    Chandler, Darrell P.; Alferov, Oleg; Chernov, Boris; Daly, Don S; Golova, Julia; Perov, Alexander; Protic, Miroslava; Robison, Richard; Schipma, Matthew; White, Amanda; Willse, Alan

    2006-01-01

    A genome-independent microarray and new statistical techniques were used to genotype Bacillus strains and quantitatively compare DNA fingerprints with the known taxonomy of the genus. A synthetic DNA standard was used to understand process level variability and lead to recommended standard operating procedures for microbial forensics and clinical diagnostics.

  17. Evaluating different methods of microarray data normalization

    Ferreira Carlos

    2006-10-01

    Full Text Available Abstract Background With the development of DNA hybridization microarray technologies, nowadays it is possible to simultaneously assess the expression levels of thousands to tens of thousands of genes. Quantitative comparison of microarrays uncovers distinct patterns of gene expression, which define different cellular phenotypes or cellular responses to drugs. Due to technical biases, normalization of the intensity levels is a pre-requisite to performing further statistical analyses. Therefore, choosing a suitable approach for normalization can be critical, deserving judicious consideration. Results Here, we considered three commonly used normalization approaches, namely: Loess, Splines and Wavelets, and two non-parametric regression methods, which have yet to be used for normalization, namely, the Kernel smoothing and Support Vector Regression. The results obtained were compared using artificial microarray data and benchmark studies. The results indicate that the Support Vector Regression is the most robust to outliers and that Kernel is the worst normalization technique, while no practical differences were observed between Loess, Splines and Wavelets. Conclusion In face of our results, the Support Vector Regression is favored for microarray normalization due to its superiority when compared to the other methods for its robustness in estimating the normalization curve.

  18. Multiband CMOS sensor simplify FPA design

    Wang, Weng Lyang B.; Ling, Jer

    2015-10-01

    Push broom multi-band Focal Plane Array (FPA) design needs to consider optics, image sensor, electronic, mechanic as well as thermal. Conventional FPA use two or several CCD device as an image sensor. The CCD image sensor requires several high speed, high voltage and high current clock drivers as well as analog video processors to support their operation. Signal needs to digitize using external sample / hold and digitized circuit. These support circuits are bulky, consume a lot of power, must be shielded and placed in close to the CCD to minimize the introduction of unwanted noise. The CCD also needs to consider how to dissipate power. The end result is a very complicated FPA and hard to make due to more weighs and draws more power requiring complex heat transfer mechanisms. In this paper, we integrate microelectronic technology and multi-layer soft / hard Printed Circuit Board (PCB) technology to design electronic portion. Since its simplicity and integration, the optics, mechanic, structure and thermal design will become very simple. The whole FPA assembly and dis-assembly reduced to a few days. A multi-band CMOS Sensor (dedicated as C468) was used for this design. The CMOS Sensor, allow for the incorporation of clock drivers, timing generators, signal processing and digitization onto the same Integrated Circuit (IC) as the image sensor arrays. This keeps noise to a minimum while providing high functionality at reasonable power levels. The C468 is a first Multiple System-On-Chip (MSOC) IC. This device used our proprietary wafer butting technology and MSOC technology to combine five long sensor arrays into a size of 120 mm x 23.2 mm and 155 mm x 60 mm for chip and package, respectively. The device composed of one Panchromatic (PAN) and four different Multi- Spectral (MS) sensors. Due to its integration on the electronic design, a lot of room is clear for the thermal design. The optical and mechanical design is become very straight forward. The flight model FPA

  19. Role of Permutations in Significance Analysis of Microarray and Clustering of Significant Microarray Gene list

    Tejashree Damle

    2012-03-01

    Full Text Available Microarray is the gene expression data that represent gene in different biological states. Methods are needed to determine the significance of these changes while accounting for the enormous number of genes. Significance analysis of microarrays (SAM is a statistical technique for determining whether changes in gene expression are statistically significant. During the SAM procedure permutation of microarray data is considered to observe the changes in the overall expression level of data. With increasing number of permutations false discovery rate for gene set varies. In our work we took microarray data of Normal Glucose Tolerance (NGT, and Diabetes Mellitus (DM Type II. In this paper we proposed the result of permutations during execution of SAM algorithm. The hierarchical clustering is applied for observing expression levels of significant data and visualize it with heat map.

  20. A comparative analysis of DNA barcode microarray feature size

    Ammar, Ron; SMITH, ANDREW M.; Heisler, Lawrence E.; Giaever, Guri; Nislow, Corey

    2009-01-01

    Background Microarrays are an invaluable tool in many modern genomic studies. It is generally perceived that decreasing the size of microarray features leads to arrays with higher resolution (due to greater feature density), but this increase in resolution can compromise sensitivity. Results We demonstrate that barcode microarrays with smaller features are equally capable of detecting variation in DNA barcode intensity when compared to larger feature sizes within a specific microarray platfor...

  1. Identifying Fishes through DNA Barcodes and Microarrays.

    Marc Kochzius

    Full Text Available BACKGROUND: International fish trade reached an import value of 62.8 billion Euro in 2006, of which 44.6% are covered by the European Union. Species identification is a key problem throughout the life cycle of fishes: from eggs and larvae to adults in fisheries research and control, as well as processed fish products in consumer protection. METHODOLOGY/PRINCIPAL FINDINGS: This study aims to evaluate the applicability of the three mitochondrial genes 16S rRNA (16S, cytochrome b (cyt b, and cytochrome oxidase subunit I (COI for the identification of 50 European marine fish species by combining techniques of "DNA barcoding" and microarrays. In a DNA barcoding approach, neighbour Joining (NJ phylogenetic trees of 369 16S, 212 cyt b, and 447 COI sequences indicated that cyt b and COI are suitable for unambiguous identification, whereas 16S failed to discriminate closely related flatfish and gurnard species. In course of probe design for DNA microarray development, each of the markers yielded a high number of potentially species-specific probes in silico, although many of them were rejected based on microarray hybridisation experiments. None of the markers provided probes to discriminate the sibling flatfish and gurnard species. However, since 16S-probes were less negatively influenced by the "position of label" effect and showed the lowest rejection rate and the highest mean signal intensity, 16S is more suitable for DNA microarray probe design than cty b and COI. The large portion of rejected COI-probes after hybridisation experiments (>90% renders the DNA barcoding marker as rather unsuitable for this high-throughput technology. CONCLUSIONS/SIGNIFICANCE: Based on these data, a DNA microarray containing 64 functional oligonucleotide probes for the identification of 30 out of the 50 fish species investigated was developed. It represents the next step towards an automated and easy-to-handle method to identify fish, ichthyoplankton, and fish products.

  2. Facilitating functional annotation of chicken microarray data

    Gresham Cathy R

    2009-10-01

    Full Text Available Abstract Background Modeling results from chicken microarray studies is challenging for researchers due to little functional annotation associated with these arrays. The Affymetrix GenChip chicken genome array, one of the biggest arrays that serve as a key research tool for the study of chicken functional genomics, is among the few arrays that link gene products to Gene Ontology (GO. However the GO annotation data presented by Affymetrix is incomplete, for example, they do not show references linked to manually annotated functions. In addition, there is no tool that facilitates microarray researchers to directly retrieve functional annotations for their datasets from the annotated arrays. This costs researchers amount of time in searching multiple GO databases for functional information. Results We have improved the breadth of functional annotations of the gene products associated with probesets on the Affymetrix chicken genome array by 45% and the quality of annotation by 14%. We have also identified the most significant diseases and disorders, different types of genes, and known drug targets represented on Affymetrix chicken genome array. To facilitate functional annotation of other arrays and microarray experimental datasets we developed an Array GO Mapper (AGOM tool to help researchers to quickly retrieve corresponding functional information for their dataset. Conclusion Results from this study will directly facilitate annotation of other chicken arrays and microarray experimental datasets. Researchers will be able to quickly model their microarray dataset into more reliable biological functional information by using AGOM tool. The disease, disorders, gene types and drug targets revealed in the study will allow researchers to learn more about how genes function in complex biological systems and may lead to new drug discovery and development of therapies. The GO annotation data generated will be available for public use via AgBase website and

  3. Background Adjustment for DNA Microarrays Using a Database of Microarray Experiments

    Sui, Yunxia; Zhao, Xiaoyue; Speed, Terence P.; Wu, Zhijin

    2009-01-01

    DNA microarrays have become an indispensable technique in biomedical research. The raw measurements from microarrays undergo a number of preprocessing steps before the data are converted to the genomic level for further analysis. Background adjustment is an important step in preprocessing. Estimating background noise has been challenging because background levels vary a lot from probe to probe, yet there are limited observations on each probe. Most current methods have used the empirical Baye...

  4. Development of a large-area CMOS-based detector for real-time x-ray imaging

    Heo, Sung Kyn; Park, Sung Kyu; Hwang, Sung Ha; Im, Dong Ak; Kosonen, Jari; Kim, Tae Woo; Yun, Seungman; Kim, Ho Kyung

    2010-04-01

    Complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APSs) with high electrical and optical performances are now being attractive for digital radiography (DR) and dental cone-beam computed tomography (CBCT). In this study, we report our prototype CMOS-based detectors capable of real-time imaging. The field-of-view of the detector is 12 × 14.4 cm. The detector employs a CsI:Tl scintillator as an x-ray-to-light converter. The electrical performance of the CMOS APS, such as readout noise and full-well capacity, was evaluated. The x-ray imaging characteristics of the detector were evaluated in terms of characteristic curve, pre-sampling modulation transfer function, noise power spectrum, detective quantum efficiency, and image lag. The overall performance of the detector is demonstrated with phantom images obtained for DR and CBCT applications. The detailed development description and measurement results are addressed. With the results, we suggest that the prototype CMOS-based detector has the potential for CBCT and real-time x-ray imaging applications.

  5. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm2. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/−0.28 LSB and 0.29/−0.20 LSB, respectively. - Highlights: • CMOS sensor integrated with column-level ADC is proposed for ILC VTX outer layers. • A low-power and small-area column-level ADC for high frame-rate CPS is presented. • The test results demonstrate the power and area efficiency. • The architecture is suitable for the outer layer CMOS sensors

  6. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    Zhang, L., E-mail: liang.zhang@iphc.cnrs.fr [School of Physics, Key Laboratory of Particle Physics and Particle Irradiation, Shandong University, 250100 Jinan (China); Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, CNRS/IN2P3/UDS, 23 rue du loess, BP 28, 67037 Strasbourg (France); Morel, F.; Hu-Guo, C.; Hu, Y. [Institut Pluridisciplinaire Hubert Curien, University of Strasbourg, CNRS/IN2P3/UDS, 23 rue du loess, BP 28, 67037 Strasbourg (France)

    2014-07-01

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm{sup 2}. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/−0.28 LSB and 0.29/−0.20 LSB, respectively. - Highlights: • CMOS sensor integrated with column-level ADC is proposed for ILC VTX outer layers. • A low-power and small-area column-level ADC for high frame-rate CPS is presented. • The test results demonstrate the power and area efficiency. • The architecture is suitable for the outer layer CMOS sensors.

  7. A CMOS readout circuit for microstrip detectors

    In this work, we present the design and the results of a CMOS analog channel for silicon microstrips detectors. The readout circuit was initially conceived for the outer layers of the SuperB silicon vertex tracker (SVT), but can serve more generally other microstrip-based detection systems. The strip detectors considered show a very high stray capacitance and high series resistance. Therefore, the noise optimization was the first priority design concern. A necessary compromise on the best peaking time to achieve an acceptable noise level together with efficiency and timing accuracy has been investigated. The ASIC is composed by a preamplifier, shaping amplifier and a Time over Threshold (T.o.T) block for the digitalization of the signals. The chosen shaping function is the third-order semi-Gaussian function implemented with complex poles. An inverter stage is employed in the analog channel in order to operate with signals delivered from both p and n strips. The circuit includes the possibility to select the peaking time of the shaper output from four values: 250 ns, 375 ns, 500 ns and 750 ns. In this way, the noise performances and the signal occupancy can be optimized according to the real background during the experiment. The ASIC prototype has been fabricated in the 130 nm IBM technology which is considered intrinsically radiation hard. The results of the experimental characterization of a produced prototype are satisfactorily matched with simulation

  8. CMOS absorbance detection system for capillary electrophoresis

    This paper presents a cost-effective portable photodetection system for capillary electrophoresis absorptiometry. By using a CMOS BDJ (buried double p-n junction) detector, a dual-wavelength method for absorbance measurement is implemented. This system includes associated electronics for low-noise pre-amplification and A/D conversion, followed by digital signal acquisition and processing. Two signal processing approaches are adopted to enhance the signal to noise ratio. One is variable time synchronous detection, which optimizes the sensitivity and measuring rate compared to a conventional synchronous detection technique. The other is a statistical approach based on principal component analysis, which allows optimal estimation of detected signal. This system has been designed and tested in capillary electrophoresis conditions. Its operation has been verified with performances comparable to those of a commercialized spectrophotometric system (HP-3D CE). With potential on-chip integration of associated electronics, it may be operated as an integrable detection module for microchip electrophoresis and other microanalysis systems

  9. Fast Hopping Frequency Generation in Digital CMOS

    Farazian, Mohammad; Gudem, Prasad S

    2013-01-01

    Overcoming the agility limitations of conventional frequency synthesizers in multi-band OFDM ultra wideband is a key research goal in digital technology. This volume outlines a frequency plan that can generate all the required frequencies from a single fixed frequency, able to implement center frequencies with no more than two levels of SSB mixing. It recognizes the need for future synthesizers to bypass on-chip inductors and operate at low voltages to enable the increased integration and efficiency of networked appliances. The author examines in depth the architecture of the dividers that generate the necessary frequencies from a single base frequency and are capable of establishing a fractional division ratio.   Presenting the first CMOS inductorless single PLL 14-band frequency synthesizer for MB-OFDMUWB makes this volume a key addition to the literature, and with the synthesizer capable of arbitrary band-hopping in less than two nanoseconds, it operates well within the desired range on a 1.2-volt power s...

  10. Electrothermal frequency references in standard CMOS

    Kashmiri, S Mahdi

    2013-01-01

    This book describes an alternative method of accurate on-chip frequency generation in standard CMOS IC processes. This method exploits the thermal-diffusivity of silicon, the rate at which heat diffuses through a silicon substrate.  This is the first book describing thermal-diffusivity-based frequency references, including the complete theoretical methodology supported by practical realizations that prove the feasibility of the method.  Coverage also includes several circuit and system-level solutions for the analog electronic circuit design challenges faced.   ·         Surveys the state-of-the-art in all-silicon frequency references; ·         Examines the thermal properties of silicon as a solution for the challenge of on-chip accurate frequency generation; ·         Uses simplified modeling approaches that allow an electronics engineer easily to simulate the electrothermal elements; ·         Follows a top-down methodology in circuit design, in which system-level des...

  11. Monitoring enzyme-catalyzed reactions in micromachined nanoliter wells using a conventional microscope-based microarray reader

    van den Doel, L. Richard; Moerman, R.; van Dedem, G. W. K.; Young, Ian T.; van Vliet, Lucas J.

    2002-06-01

    Yeast-Saccharomyces cerevisiae - it widely used as a model system for other higher eukaryotes, including man. One of the basic fermentation processes in yeast is the glycolytic pathway, which is the conversion of glucose to ethanol and carbon dioxide. This pathway consists of 12 enzyme-catalyzed reactions. With the approach of microarray technology we want to explore the metabolic regulation of this pathway in yeast. This paper will focus on the design of a conventional microscope based microarray reader, which is used to monitor these enzymatic reactions in microarrays. These microarrays are fabricated in silicon and have sizes of 300 by 300 micrometers 2. The depth varies from 20 to 50 micrometers . Enzyme activity levels can be derived by monitoring the production or consumption rate of NAD(P)H, which is excited at 360nm and emits around 450nm. This fluorophore is involved in all 12 reactions of the pathway. The microarray reader is equipped with a back-illuminated CCD camera in order to obtain a high quantum efficiency for the lower wavelengths. The dynamic range of our microarray reader varies form 5(mu) Molar to 1mMolar NAD(P)H. With this microarray reader enzyme activity levels down to 0.01 unit per milliliter can be monitored. The acquisition time per well is 0.1s. The total scan cycle time for a 5 X 5 microarray is less than half a minute. The number of cycles for a proper estimation of the enzyme activity is inversely proportional to the enzyme activity: long measurement times are needed to determine low enzyme activity levels.

  12. EXPANDER – an integrative program suite for microarray data analysis

    Shiloh Yosef

    2005-09-01

    Full Text Available Abstract Background Gene expression microarrays are a prominent experimental tool in functional genomics which has opened the opportunity for gaining global, systems-level understanding of transcriptional networks. Experiments that apply this technology typically generate overwhelming volumes of data, unprecedented in biological research. Therefore the task of mining meaningful biological knowledge out of the raw data is a major challenge in bioinformatics. Of special need are integrative packages that provide biologist users with advanced but yet easy to use, set of algorithms, together covering the whole range of steps in microarray data analysis. Results Here we present the EXPANDER 2.0 (EXPression ANalyzer and DisplayER software package. EXPANDER 2.0 is an integrative package for the analysis of gene expression data, designed as a 'one-stop shop' tool that implements various data analysis algorithms ranging from the initial steps of normalization and filtering, through clustering and biclustering, to high-level functional enrichment analysis that points to biological processes that are active in the examined conditions, and to promoter cis-regulatory elements analysis that elucidates transcription factors that control the observed transcriptional response. EXPANDER is available with pre-compiled functional Gene Ontology (GO and promoter sequence-derived data files for yeast, worm, fly, rat, mouse and human, supporting high-level analysis applied to data obtained from these six organisms. Conclusion EXPANDER integrated capabilities and its built-in support of multiple organisms make it a very powerful tool for analysis of microarray data. The package is freely available for academic users at http://www.cs.tau.ac.il/~rshamir/expander

  13. CMOS Cell Sensors for Point-of-Care Diagnostics

    Haluk Kulah

    2012-07-01

    Full Text Available The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS. CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies.

  14. VLSI scaling methods and low power CMOS buffer circuit

    Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

  15. CMOS Imaging Sensor Technology for Aerial Mapping Cameras

    Neumann, Klaus; Welzenbach, Martin; Timm, Martin

    2016-06-01

    In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

  16. Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits Project

    National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

  17. A tiling microarray for global analysis of chloroplast genome expression in cucumber and other plants

    Pląder Wojciech

    2011-09-01

    Full Text Available Abstract Plastids are small organelles equipped with their own genomes (plastomes. Although these organelles are involved in numerous plant metabolic pathways, current knowledge about the transcriptional activity of plastomes is limited. To solve this problem, we constructed a plastid tiling microarray (PlasTi-microarray consisting of 1629 oligonucleotide probes. The oligonucleotides were designed based on the cucumber chloroplast genomic sequence and targeted both strands of the plastome in a non-contiguous arrangement. Up to 4 specific probes were designed for each gene/exon, and the intergenic regions were covered regularly, with 70-nt intervals. We also developed a protocol for direct chemical labeling and hybridization of as little as 2 micrograms of chloroplast RNA. We used this protocol for profiling the expression of the cucumber chloroplast plastome on the PlasTi-microarray. Owing to the high sequence similarity of plant plastomes, the newly constructed microarray can be used to study plants other than cucumber. Comparative hybridization of chloroplast transcriptomes from cucumber, Arabidopsis, tomato and spinach showed that the PlasTi-microarray is highly versatile.

  18. Improved microarray-based decision support with graph encoded interactome data.

    Anneleen Daemen

    Full Text Available In the past, microarray studies have been criticized due to noise and the limited overlap between gene signatures. Prior biological knowledge should therefore be incorporated as side information in models based on gene expression data to improve the accuracy of diagnosis and prognosis in cancer. As prior knowledge, we investigated interaction and pathway information from the human interactome on different aspects of biological systems. By exploiting the properties of kernel methods, relations between genes with similar functions but active in alternative pathways could be incorporated in a support vector machine classifier based on spectral graph theory. Using 10 microarray data sets, we first reduced the number of data sources relevant for multiple cancer types and outcomes. Three sources on metabolic pathway information (KEGG, protein-protein interactions (OPHID and miRNA-gene targeting (microRNA.org outperformed the other sources with regard to the considered class of models. Both fixed and adaptive approaches were subsequently considered to combine the three corresponding classifiers. Averaging the predictions of these classifiers performed best and was significantly better than the model based on microarray data only. These results were confirmed on 6 validation microarray sets, with a significantly improved performance in 4 of them. Integrating interactome data thus improves classification of cancer outcome for the investigated microarray technologies and cancer types. Moreover, this strategy can be incorporated in any kernel method or non-linear version of a non-kernel method.

  19. Immobilization Techniques for Microarray: Challenges and Applications

    Satish Balasaheb Nimse

    2014-11-01

    Full Text Available The highly programmable positioning of molecules (biomolecules, nanoparticles, nanobeads, nanocomposites materials on surfaces has potential applications in the fields of biosensors, biomolecular electronics, and nanodevices. However, the conventional techniques including self-assembled monolayers fail to position the molecules on the nanometer scale to produce highly organized monolayers on the surface. The present article elaborates different techniques for the immobilization of the biomolecules on the surface to produce microarrays and their diagnostic applications. The advantages and the drawbacks of various methods are compared. This article also sheds light on the applications of the different technologies for the detection and discrimination of viral/bacterial genotypes and the detection of the biomarkers. A brief survey with 115 references covering the last 10 years on the biological applications of microarrays in various fields is also provided.

  20. A Flexible Microarray Data Simulation Model

    Doulaye Dembélé

    2013-04-01

    Full Text Available Microarray technology allows monitoring of gene expression profiling at the genome level. This is useful in order to search for genes involved in a disease. The performances of the methods used to select interesting genes are most often judged after other analyzes (qPCR validation, search in databases..., which are also subject to error. A good evaluation of gene selection methods is possible with data whose characteristics are known, that is to say, synthetic data. We propose a model to simulate microarray data with similar characteristics to the data commonly produced by current platforms. The parameters used in this model are described to allow the user to generate data with varying characteristics. In order to show the flexibility of the proposed model, a commented example is given and illustrated. An R package is available for immediate use.

  1. Microinjection of antisense c-mos oligonucleotides prevents meiosis II in the maturing mouse egg.

    O'Keefe, S J; Wolfes, H; Kiessling, A A; Cooper, G M

    1989-01-01

    Injection of antisense oligonucleotides was used to investigate the function of c-mos in murine oocytes. Oocytes injected with antisense c-mos oligonucleotides completed the first meiotic division but failed to initiate meiosis II. Instead, loss of c-mos function led to chromosome decondensation, reformation of a nucleus after meiosis I, and cleavage to two cells. Therefore, c-mos is required for meiosis II during murine oocyte maturation.

  2. Microarrays for Pathogen Detection and Analysis

    McLoughlin, Kevin S.

    2011-01-01

    DNA microarrays have emerged as a viable platform for detection of pathogenic organisms in clinical and environmental samples. These microbial detection arrays occupy a middle ground between low cost, narrowly focused assays such as multiplex PCR and more expensive, broad-spectrum technologies like high-throughput sequencing. While pathogen detection arrays have been used primarily in a research context, several groups are aggressively working to develop arrays for clinical diagnostics, food ...

  3. A Gene Expression Barcode for Microarray Data

    Zilliox, Michael J.; Irizarry, Rafael A.

    2007-01-01

    The ability to measure genome-wide expression holds great promise for characterizing cells and distinguishing diseased from normal tissues. Thus far, microarray technology has only been useful for measuring relative expression between two or more samples, which has handicapped its ability to classify tissue types. This paper presents the first method that can successfully predict tissue type based on data from a single hybridization. A preliminary web-tool is available at http://rafalab.jhsph...

  4. Pineal Function: Impact of Microarray Analysis

    Klein, David C.; Bailey, Michael J; Carter, David A.; Kim, Jong-So; Shi, Qiong; Ho, Anthony; Chik, Constance; Gaildrat, Pascaline; Morin, Fabrice; Ganguly, Surajit; Rath, Martin F.; Møller, Morten; Sugden, David; Rangel, Zoila G.; Peter J Munson

    2009-01-01

    Microarray analysis has provided a new understanding of pineal function by identifying genes that are highly expressed in this tissue relative to other tissues and also by identifying over 600 genes that are expressed on a 24-hour schedule. This effort has highlighted surprising similarity to the retina and has provided reason to explore new avenues of study including intracellular signaling, signal transduction, transcriptional cascades, thyroid/retinoic acid hormone signaling, metal biology...

  5. Meta-analysis of Incomplete Microarray Studies

    Leboucq, Alix

    2014-01-01

    Meta-analysis of microarray studies to produce an overall gene list is relatively straightforward when complete data are available. When some studies lack information, providing only a ranked list of genes, for example, it is common to reduce all studies to ranked lists prior to combining them. Since this entails a loss of information, we consider a hierarchical Bayes approach to meta-analysis using different types of information from different studies: the full data matrix, summary statistic...

  6. Linking microarray reporters with protein functions

    Gaj Stan

    2007-09-01

    Full Text Available Abstract Background The analysis of microarray experiments requires accurate and up-to-date functional annotation of the microarray reporters to optimize the interpretation of the biological processes involved. Pathway visualization tools are used to connect gene expression data with existing biological pathways by using specific database identifiers that link reporters with elements in the pathways. Results This paper proposes a novel method that aims to improve microarray reporter annotation by BLASTing the original reporter sequences against a species-specific EMBL subset, that was derived from and crosslinked back to the highly curated UniProt database. The resulting alignments were filtered using high quality alignment criteria and further compared with the outcome of a more traditional approach, where reporter sequences were BLASTed against EnsEMBL followed by locating the corresponding protein (UniProt entry for the high quality hits. Combining the results of both methods resulted in successful annotation of > 58% of all reporter sequences with UniProt IDs on two commercial array platforms, increasing the amount of Incyte reporters that could be coupled to Gene Ontology terms from 32.7% to 58.3% and to a local GenMAPP pathway from 9.6% to 16.7%. For Agilent, 35.3% of the total reporters are now linked towards GO nodes and 7.1% on local pathways. Conclusion Our methods increased the annotation quality of microarray reporter sequences and allowed us to visualize more reporters using pathway visualization tools. Even in cases where the original reporter annotation showed the correct description the new identifiers often allowed improved pathway and Gene Ontology linking. These methods are freely available at http://www.bigcat.unimaas.nl/public/publications/Gaj_Annotation/.

  7. Facilitating functional annotation of chicken microarray data

    Buza, Teresia J; Kumar, Ranjit; Gresham, Cathy R; Burgess, Shane C.; McCarthy, Fiona M

    2009-01-01

    Modeling results from chicken microarray studies is challenging for researchers due to little functional annotation associated with these arrays. The Affymetrix GenChip chicken genome array, one of the biggest arrays that serve as a key research tool for the study of chicken functional genomics, is among the few arrays that link gene products to Gene Ontology (GO). However the GO annotation data presented by Affymetrix is incomplete, for example, they do not show references linked to manually...

  8. Tissue Microarrays for Analysis of Expression Patterns

    Lindskog Bergström, Cecilia

    2013-01-01

    Proteins are essential building blocks in every living cell, and since the complete human genome was sequenced in 2004, researchers have attempted to map the human proteome, which is the functional representation of the genome. One such initiative is the Human Protein Atlas programme (HPA), which generates monospecific antibodies towards all human proteins and uses these for high-throughput tissue profiling on tissue microarrays (TMAs). The results are publically available at the website www....

  9. Multiplex giant magnetoresistive biosensor microarrays identify interferon-associated autoantibodies in systemic lupus erythematosus

    Lee, Jung-Rok; Haddon, D. James; Wand, Hannah E.; Price, Jordan V.; Diep, Vivian K.; Hall, Drew A.; Petri, Michelle; Baechler, Emily C.; Balboni, Imelda M.; Utz, Paul J.; Wang, Shan X.

    2016-06-01

    High titer, class-switched autoantibodies are a hallmark of systemic lupus erythematosus (SLE). Dysregulation of the interferon (IFN) pathway is observed in individuals with active SLE, although the association of specific autoantibodies with chemokine score, a combined measurement of three IFN-regulated chemokines, is not known. To identify autoantibodies associated with chemokine score, we developed giant magnetoresistive (GMR) biosensor microarrays, which allow the parallel measurement of multiple serum antibodies to autoantigens and peptides. We used the microarrays to analyze serum samples from SLE patients and found individuals with high chemokine scores had significantly greater reactivity to 13 autoantigens than individuals with low chemokine scores. Our findings demonstrate that multiple autoantibodies, including antibodies to U1-70K and modified histone H2B tails, are associated with IFN dysregulation in SLE. Further, they show the microarrays are capable of identifying autoantibodies associated with relevant clinical manifestations of SLE, with potential for use as biomarkers in clinical practice.

  10. The Potentials and Pitfalls of Microarrays in Neglected Tropical Diseases: A Focus on Human Filarial Infections.

    Kwarteng, Alexander; Ahuno, Samuel Terkper

    2016-01-01

    Data obtained from expression microarrays enables deeper understanding of the molecular signatures of infectious diseases. It provides rapid and accurate information on how infections affect the clustering of gene expression profiles, pathways and networks that are transcriptionally active during various infection states compared to conventional diagnostic methods, which primarily focus on single genes or proteins. Thus, microarray technologies offer advantages in understanding host-parasite interactions associated with filarial infections. More importantly, the use of these technologies can aid diagnostics and helps translate current genomic research into effective treatment and interventions for filarial infections. Studying immune responses via microarray following infection can yield insight into genetic pathways and networks that can have a profound influence on the development of anti-parasitic vaccines. PMID:27600086

  11. Study of CMOS integrated signal processing circuit in capacitive sensors

    CAO Yi-jiang; YU Xiang; WANG Lei

    2007-01-01

    A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage's frequency. The whole circuit is designed with 1.5 μm P-well CMOS process and simulated by PSpice software.Output frequency varies from 261.05 kHz to 47.93 kHz if capacitance varies in the range of 1PF~15PF. And the variation of frequency can be easily detected using counter or SCU.

  12. Fabrication of the planar angular rotator using the CMOS process

    Dai, Ching-Liang; Chang, Chien-Liu; Chen, Hung-Lin; Chang, Pei-Zen

    2002-05-01

    In this investigation we propose a novel planar angular rotator fabricated by the conventional complementary metal-oxide semiconductor (CMOS) process. Following the 0.6 μm single poly triple metal (SPTM) CMOS process, the device is completed by a simple maskless, post-process etching step. The rotor of the planar angular rotator rotates around its geometric center with electrostatic actuation. The proposed design adopts an intelligent mechanism including the slider-crank system to permit simultaneous motion. The CMOS planar angular rotator could be driven with driving voltages of around 40 V. The design proposed here has a shorter response time and longer life, without problems of friction and wear, compared to the more common planar angular micromotor.

  13. VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

    Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

    2014-10-01

    This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

  14. Design and characterization of avalanche photodiodes in submicron CMOS technologies

    Pancheri, L.; Bendib, T.; Dalla Betta, G.-F.; Stoppa, D.

    2014-03-01

    The fabrication of Avalanche Photodiodes (APDs) in CMOS processes can be exploited in several application domains, including telecommunications, time-resolved optical detection and scintillation detection. CMOS integration allows the realization of systems with a high degree of parallelization which are competitive with hybrid solutions in terms of cost and complexity. In this work, we present a linear-mode APD fabricated in a 0.15μm process, and report its gain and noise characterization. The experimental observations can be accurately predicted using Hayat dead-space noise model. Device simulations based on dead-space model are then used to discuss the current status and the perspectives for the integration of high-performance low-noise devices in standard CMOS processes.

  15. Low-voltage CMOS operational amplifiers theory, design and implementation

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  16. IGBT scaling principle toward CMOS compatible wafer processes

    Tanaka, Masahiro; Omura, Ichiro

    2013-02-01

    A scaling principle for trench gate IGBT is proposed. CMOS technology on large diameter wafer enables to produce various digital circuits with higher performance and lower cost. The transistor cell structure becomes laterally smaller and smaller and vertically shallower and shallower. In contrast, latest IGBTs have rather deeper trench structure to obtain lower on-state voltage drop and turn-off loss. In the aspect of the process uniformity and wafer warpage, manufacturing such structure in the CMOS factory is difficult. In this paper, we show the scaling principle toward shallower structure and better performance. The principle is theoretically explained by our previously proposed "Structure Oriented" analytical model. The principle represents a possibility of technology direction and roadmap for future IGBT for improving the device performance consistent with lower cost and high volume productivity with CMOS compatible large diameter wafer technologies.

  17. Normalization Benefits Microarray-Based Classification

    Chen Yidong

    2006-01-01

    Full Text Available When using cDNA microarrays, normalization to correct labeling bias is a common preliminary step before further data analysis is applied, its objective being to reduce the variation between arrays. To date, assessment of the effectiveness of normalization has mainly been confined to the ability to detect differentially expressed genes. Since a major use of microarrays is the expression-based phenotype classification, it is important to evaluate microarray normalization procedures relative to classification. Using a model-based approach, we model the systemic-error process to generate synthetic gene-expression values with known ground truth. These synthetic expression values are subjected to typical normalization methods and passed through a set of classification rules, the objective being to carry out a systematic study of the effect of normalization on classification. Three normalization methods are considered: offset, linear regression, and Lowess regression. Seven classification rules are considered: 3-nearest neighbor, linear support vector machine, linear discriminant analysis, regular histogram, Gaussian kernel, perceptron, and multiple perceptron with majority voting. The results of the first three are presented in the paper, with the full results being given on a complementary website. The conclusion from the different experiment models considered in the study is that normalization can have a significant benefit for classification under difficult experimental conditions, with linear and Lowess regression slightly outperforming the offset method.

  18. Normalization Benefits Microarray-Based Classification

    Edward R. Dougherty

    2006-08-01

    Full Text Available When using cDNA microarrays, normalization to correct labeling bias is a common preliminary step before further data analysis is applied, its objective being to reduce the variation between arrays. To date, assessment of the effectiveness of normalization has mainly been confined to the ability to detect differentially expressed genes. Since a major use of microarrays is the expression-based phenotype classification, it is important to evaluate microarray normalization procedures relative to classification. Using a model-based approach, we model the systemic-error process to generate synthetic gene-expression values with known ground truth. These synthetic expression values are subjected to typical normalization methods and passed through a set of classification rules, the objective being to carry out a systematic study of the effect of normalization on classification. Three normalization methods are considered: offset, linear regression, and Lowess regression. Seven classification rules are considered: 3-nearest neighbor, linear support vector machine, linear discriminant analysis, regular histogram, Gaussian kernel, perceptron, and multiple perceptron with majority voting. The results of the first three are presented in the paper, with the full results being given on a complementary website. The conclusion from the different experiment models considered in the study is that normalization can have a significant benefit for classification under difficult experimental conditions, with linear and Lowess regression slightly outperforming the offset method.

  19. Metadata Management and Semantics in Microarray Repositories

    Kocabaş, F; Can, T; Baykal, N

    2011-01-01

    The number of microarray and other high-throughput experiments on primary repositories keeps increasing as do the size and complexity of the results in response to biomedical investigations. Initiatives have been started on standardization of content, object model, exchange format and ontology. However, there are backlogs and inability to exchange data between microarray repositories, which indicate that there is a great need for a standard format and data management. We have introduced a metadata framework that includes a metadata card and semantic nets that make experimental results visible, understandable and usable. These are encoded in syntax encoding schemes and represented in RDF (Resource Description Frame-word), can be integrated with other metadata cards and semantic nets, and can be exchanged, shared and queried. We demonstrated the performance and potential benefits through a case study on a selected microarray repository. We concluded that the backlogs can be reduced and that exchange of information and asking of knowledge discovery questions can become possible with the use of this metadata framework. PMID:24052712

  20. Integrating data from heterogeneous DNA microarray platforms.

    Valente, Eduardo; Rocha, Miguel

    2015-01-01

    DNA microarrays are one of the most used technologies for gene expression measurement. However, there are several distinct microarray platforms, from different manufacturers, each with its own measurement protocol, resulting in data that can hardly be compared or directly integrated. Data integration from multiple sources aims to improve the assertiveness of statistical tests, reducing the data dimensionality problem. The integration of heterogeneous DNA microarray platforms comprehends a set of tasks that range from the re-annotation of the features used on gene expression, to data normalization and batch effect elimination. In this work, a complete methodology for gene expression data integration and application is proposed, which comprehends a transcript-based re-annotation process and several methods for batch effect attenuation. The integrated data will be used to select the best feature set and learning algorithm for a brain tumor classification case study. The integration will consider data from heterogeneous Agilent and Affymetrix platforms, collected from public gene expression databases, such as The Cancer Genome Atlas and Gene Expression Omnibus. PMID:26673932

  1. Design of automatic data selector for microarray biosensor%微阵列生物传感器的自动数据选通器设计

    潘银松; 李向全; 张成伟; 张仁富; 孔谋夫

    2009-01-01

    为了让微阵列生物传感器的多路并行模拟信号能够分时的串行输出,以便后续电路处理,设计了一种自动数据选通器.该数据选通器主要由CMOS传输门和CMOS移位寄存器构成,能同时适用于数字信号与模拟信号.在0.6 pμm/Level 7 CMOS工艺条件下进行模拟,仿真结果表明:该数据选通器具有较高的性能.%In order to make the multiplex parallel analog signal of the microarray biosensor can be time-sharing output and is easier processed by next circuit, a automatic data selector is designed. This device is constituted by CMOS transmission and CMOS shift register and is able to apply to the digital signal and analog signal at the same time. Simulation is carried out with 0.6μm/Level 7 CMOS,the simulation results indicate that the data selector has a good performance.

  2. 77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

    2012-05-07

    ... COMMISSION Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint... complaint entitled Certain CMOS Image Sensors and Products Containing Same, DN 2895; the Commission is... importation of certain CMOS image sensors and products containing same. The complaint names as...

  3. Spectrometer with CMOS demodulation of fiber optic Bragg grating sensors

    Christiansen, Martin Brokner

    A CMOS imager based spectrometer is developed to interrogate a network containing a large number of Bragg grating sensors. The spectrometer uses a Prism-Grating- Prism (PGP) to spectrally separate serially multiplexed Bragg reflections on a single fiber. As a result, each Bragg grating produces a discrete spot on the CMOS imager that shifts horizontally as the Bragg grating experiences changes in strain or temperature. The reflected wavelength of the spot can be determined by finding the center of the spot produced. The use of a randomly addressable CMOS imager enables a flexible sampling rate. Some fibers can be interrogated at a high sampling rate while others can be interrogated at a low sampling rate. However, the use of a CMOS imager leads to several unique problems in terms of signal processing. These include a logarithmic pixel response, a low signal-to-noise ratio, a long pixel time constant, and software issues. The expected capabilities of the CMOS imager based spectrometer are determined with a theoretical model. The theoretical model tests three algorithms for determining the center of the spot: single row centroid, single row parabolic fit, and entire spot centroid. The theoretical results are compared to laboratory test data and field test data. The CMOS based spectrometer is capable of interrogating many optical fibers, and in the configuration tested, the fiber bundle consisted of 23 fibers. Using this system, a single fiber can be interrogated from 778 nm to 852 nm at 2100 Hz or multiple fibers can be interrogated over the same wavelength so that the total number of fiber interrogations is up to 2100 per second. The reflected Bragg wavelength can be determined within +/-3pm, corresponding to a +/-3μɛ uncertainty.

  4. An analog CMOS chip set for neural networks with arbitrary topologies

    Lansner, John; Lehmann, Torsten

    1993-01-01

    An analog CMOS chip set for implementations of artificial neural networks (ANNs) has been fabricated and tested. The chip set consists of two cascadable chips: a neuron chip and a synapse chip. Neurons on the neuron chips can be interconnected at random via synapses on the synapse chips thus...... implementing an ANN with arbitrary topology. The neuron test chip contains an array of 4 neurons with well defined hyperbolic tangent activation functions which is implemented by using parasitic lateral bipolar transistors. The synapse test chip is a cascadable 4×4 matrix-vector multiplier with variable, 10-b...

  5. Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting

    Guidash, Michael; Ma, Jiaju; Vogelsang, Thomas; Endsley, Jay

    2016-01-01

    Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e− read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF) bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor. PMID:27070625

  6. CMOS MAPS in a Homogeneous 3D Process for Charged Particle Tracking

    Manazza, A; Manghisoni, M; Re, V; Traversi, G; Bettarini, S; Forti, F; Morsani, F; Rizzo, G; 10.1109/TNS.2014.2299341

    2014-01-01

    This work presents the characterization of deep n-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm homogeneous, vertically integrated technology. An evaluation of the 3D MAPS device performance, designed for application of the experiments at the future high luminosity colliders, is provided through the characterization of the prototypes, including tests with infrared (IR) laser, 55Fe and 90Sr sources. The radiation hardness study of the technology will also be presented together with its impact on 3D DNW MAPS performance.

  7. Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting

    Michael Guidash

    2016-04-01

    Full Text Available Recent activity in photon counting CMOS image sensors (CIS has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e− read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor.

  8. Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting.

    Guidash, Michael; Ma, Jiaju; Vogelsang, Thomas; Endsley, Jay

    2016-01-01

    Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e(-) read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF) bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor. PMID:27070625

  9. A Wide-Band Injection-Locked Frequency Divider in 0.18um CMOS

    Acar, M.; Leenaerts, D. M. W.; Nauta, Bram

    2004-01-01

    In this paper we propose a novel inductorless Injection-Locked Frequency Divider (ILFD) that can make divisions with ratios 2,4,6 and 8 with wide locking ranges. Fabricated in a digital 0.18μm CMOS process the divider can operate up to 15 GHz. The measured locking ranges of the divider for division ratios 4 and 6 are 1.6 GHz and 1.1 GHz wide respectively. The current consumption of the divider is 3.8 mA operating at 1.8V supply. The active area of the chip is 100x67μm2.

  10. A CMOS-logic-based reactor instrumentation system

    The paper describes a Control and Instrumentation (C and I) system for nuclear reactors. The project approach to design was established at the outset so that all organizations conformed to a nationally applied and audited quality assurance standard; those engaged in setting design objectives and subsequent assessment/justification were different from those involved in detailed design of the C and I equipment and the on-line test equipment. The design was undertaken in three separate sequential stages and each organization worked to written design guidelines. In the equipment design, a standard 'building block' technique was adopted so that a wide range of measurements for reactor safety equipment could be provided from standard plug-in cards and modules fitted in rugged purpose-designed racks. CMOS (Complementary Metal Oxide Semiconductor) digitally based equipment was selected for this application after extensive evaluation of other technologies. The racks contain all the electronics so that sensors are just passive components, i.e. there are no driver circuits in the containment area. Analogue signals from sensors are immediately converted to digital words and all subsequent processing or trip functions are performed digitally, in some cases by microprocessors. Where microprocessors are used, they are always dedicated to a single-channel function and software is written so that it is simple and checkable. The availability of data as digital words allows in-situ automatic testing of all cards during normal operation by on-line test equipment which can also perform 'active' tests on particular channels by controlling test signal generators built into all channels. Interlocks prevent active testing of more than one subsystem at a time. A particular system is described which is arranged as four identical redundant subsystems and one set of on-line test equipment, but this is only one of many possible arrangements

  11. CMOS sensor as charged particles and ionizing radiation detector

    This paper reports results of CMOS sensor suitable for use as charged particles and ionizing radiation detector. The CMOS sensor with 640 × 480 pixels area has been integrated into an electronic circuit for detection of ionizing radiation and it was exposed to alpha particle (Am-241, Unat), beta (Sr-90), and gamma photons (Cs-137). Results show after long period of time (168 h) irradiation the sensor had not loss of functionality and also the energy of the charge particles and photons were very well obtained

  12. CMOS voltage references an analytical and practical perspective

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  13. An equivalent doping profile for CMOS substrate characterization

    Quaresma, Henrique J.; Mendonça dos Santos, P.; Cruz Serra, A.

    2013-01-01

    This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance.

  14. Linear CMOS RF power amplifiers a complete design workflow

    Ruiz, Hector Solar

    2013-01-01

    The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

  15. Low-voltage CMOS log companding analog design

    Serra-Graells, Francisco; Huertas, Jos ̌L 0

    2004-01-01

    This work presents in detail state-of-the-art analog circuit techniques for the very low-voltage and low-power design of systems-on-chip in CMOS technologies. The proposed strategy is mainly based on two bases: the Instantaneous Log Companding Theory, and the MOSFET operating in the subthreshold region. The former allows inner compression of the voltage dynamic-range for very low-voltage operation, while the latter is compatible with CMOS technologies and suitable for low-power circuits. The required background on the specific modelling of the MOS transistor for Companding is supplied at the b

  16. From vertex detectors to inner trackers with CMOS pixel sensors

    Besson, A.; Pérez, A. Pérez; Spiriti, E.; Baudot, J.; Claus, G; Goffe, M.; de Winter, M.

    2016-01-01

    The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming ...

  17. Process optimization of radiation-hardened CMOS integrated circuits

    The effects of processing steps on the radiation hardness of MOS devices have been systematically investigated. Quantitative relationships between the radiation-induced voltage shifts and processing parameters have been determined, where possible. Using the results of process optimization, a controlled baseline fabrication process for aluminum-gate CMOS has been defined. CMOS inverters which can survive radiation exposures well in excess of 108 rads (Si) have been fabricated. Restrictions that the observed physical dependences place upon possible models for the traps responsible for radiation-induced charging in SiO2 are discussed

  18. A 0.5-GHz CMOS digital RF memory chip

    Schnaitter, W. M.; Lewis, E. T.; Gordon, B. E.

    1986-10-01

    Digital RF memories (DRFM's) are key elements for modern radar jamming. An RF signal is sampled, stored in random access memory (RAM), and later recreated from the stored data. Here the first CMOS DRFM chip, integrating static RAM, control circuitry, and two channels of shift registers, on a single chip is described. The sample rate achieved was 0.5 GHz, VLSI density was made possible by the low-power dissipation of quiescent CMOS circuits. An 8K RAM prototype chip has been built and tested.

  19. Proton therapy beam dosimetry with silicon CMOS image sensors

    In a previous publication, it has been shown how neutron and proton beams in a quite broad energy interval, could be simply monitored with a position sensitive CMOS image detector. The direct read out, the lack of pile up effects, the stability of the signal, the detector linear response with proton energy and current and the very low costs of the device could make the CMOS detector a good candidate in addition to other well established detectors for proton radiation dosimetry. (N.T.)

  20. Effects of Proton Irradiation on a CMOS Image Sensor

    HUANG Qiang; MENG Xiang-Ti

    2007-01-01

    We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×109 to 4×1010 cm-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×1010 cm-2. The captured colour images become very blurry at 4×1010 cm-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.

  1. A 65 nm CMOS LNA for Bolometer Application

    Huang, Tom Nan; Boon, Chirn Chye; Zhu, Forest Xi; Yi, Xiang; He, Xiaofeng; Feng, Guangyin; Lim, Wei Meng; Liu, Bei

    2016-04-01

    Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer's pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.

  2. New Curvature-Compensated CMOS Bandgap Voltage Reference

    Lu Shen; Ning Ning; Qi Yu; Yan Luo; Chun-Sheng Li

    2007-01-01

    A novel curvaturecompensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit,designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from 40 ℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is 56 dB at 10 MHz.

  3. High Q-factor CMOS-MEMS inductor

    Dai, Ching-Liang; Hong, Jin-Yu; Liu, Mao-Chen

    2008-01-01

    This study investigates a high Q-factor spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process. The spiral inductor is manufactured on silicon substrate using the 0.35 micrometers CMOS process. In order to reduce the substrate loss and enhance the Q-factor of the inductor, silicon substrate under the inductor is removed using a post-process. The post-process uses RIE (reactive ion etching) to etch the sacrificial layer of silicon dioxide, a...

  4. Low-power CMOS circuit design for fast infrared imagers

    Margarit Taule, Josep Maria

    2008-01-01

    La present tesi de màster detalla novedoses tècniques circuitals per al disseny de circuits integrats digitals CMOS de lectura compactes, de baixa potència i completament programables, destinats a aplicacions d'IR d'alta velocitat operant a temperatura ambient. En aquest sentit, el treball recull i amplia notablement la recerca iniciada en el Projecte Final de Carrera "Tècniques de disseny CMOS per a sistemes de visió híbrids de pla focal modular" obtenint-se resultats específics en tres dife...

  5. CMOS sigma-delta converters practical design guide

    De la Rosa, Jose M

    2013-01-01

    A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

  6. DNA Microarray Data Analysis: A Novel Biclustering Algorithm Approach

    Tewfik Ahmed H

    2006-01-01

    Full Text Available Biclustering algorithms refer to a distinct class of clustering algorithms that perform simultaneous row-column clustering. Biclustering problems arise in DNA microarray data analysis, collaborative filtering, market research, information retrieval, text mining, electoral trends, exchange analysis, and so forth. When dealing with DNA microarray experimental data for example, the goal of biclustering algorithms is to find submatrices, that is, subgroups of genes and subgroups of conditions, where the genes exhibit highly correlated activities for every condition. In this study, we develop novel biclustering algorithms using basic linear algebra and arithmetic tools. The proposed biclustering algorithms can be used to search for all biclusters with constant values, biclusters with constant values on rows, biclusters with constant values on columns, and biclusters with coherent values from a set of data in a timely manner and without solving any optimization problem. We also show how one of the proposed biclustering algorithms can be adapted to identify biclusters with coherent evolution. The algorithms developed in this study discover all valid biclusters of each type, while almost all previous biclustering approaches will miss some.

  7. DNA Microarray Data Analysis: A Novel Biclustering Algorithm Approach

    Tchagang, Alain B.; Tewfik, Ahmed H.

    2006-12-01

    Biclustering algorithms refer to a distinct class of clustering algorithms that perform simultaneous row-column clustering. Biclustering problems arise in DNA microarray data analysis, collaborative filtering, market research, information retrieval, text mining, electoral trends, exchange analysis, and so forth. When dealing with DNA microarray experimental data for example, the goal of biclustering algorithms is to find submatrices, that is, subgroups of genes and subgroups of conditions, where the genes exhibit highly correlated activities for every condition. In this study, we develop novel biclustering algorithms using basic linear algebra and arithmetic tools. The proposed biclustering algorithms can be used to search for all biclusters with constant values, biclusters with constant values on rows, biclusters with constant values on columns, and biclusters with coherent values from a set of data in a timely manner and without solving any optimization problem. We also show how one of the proposed biclustering algorithms can be adapted to identify biclusters with coherent evolution. The algorithms developed in this study discover all valid biclusters of each type, while almost all previous biclustering approaches will miss some.

  8. CMOS SPADs with up to 500 μm diameter and 55% detection efficiency at 420 nm

    Villa, Federica; Bronzi, Danilo; Zou, Yu; Scarcella, Carmelo; Boso, Gianluca; Tisa, Simone; Tosi, Alberto; Zappa, Franco; Durini, Daniel; Weyers, Sascha; Paschen, Uwe; Brockherde, Werner

    2014-01-01

    Many demanding applications require single-photon detectors with very large active area, very low noise, high detection efficiency, and precise time response. Single-photon avalanche diodes (SPADs) provide all the advantages of solid-state devices, but in many applications other single-photon detectors, like photomultiplier tubes, have been preferred so far due to their larger active area. We developed silicon SPADs with active area diameters as large as 500 μm in a fully standard CMOS process. The 500 μm SPAD exhibits 55% peak photon detection efficiency at 420 nm, 8 kcps of dark counting rate at 0°C, and high uniformity of the sensitivity in the active area. These devices can be used with on-chip integrated quenching circuitry, which reduces the afterpulsing probability, or with external circuits to achieve even better photon-timing performances, as good as 92 ps FWHM for a 100 μm diameter SPAD. Owing to the state-of-the-art performance, not only compared to CMOS SPADs but also SPADs developed in custom technologies, very high uniformity and low crosstalk probability, these CMOS SPADs can be successfully employed in detector arrays and single-chip imagers for single-photon counting and timing applications.

  9. Design, development and evaluation of a high spatial density CMOS chip for bidirectional communication with electrogenic cells

    Yegin, Ugur

    2012-01-01

    In this project, we present 2 CMOS chips designed in our institute with the aim of establishing a bio-electronic interface with electrically active cells. A measurement and control setup consisting of electronic components responsible for the control of the chips as well as the digitizazion and processing of the data they provide has also been developed. An intuitive LabView program faciliates the user interaction by allowing the setting of all analog bias voltages and digital controls, which...

  10. Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor

    Xie, N.; Theuwissen, A.J.P.

    2013-01-01

    A micro-digital sun sensor (μDSS) is a sun detector which senses a satellite’s instant attitude angle with respect to the sun. The core of this sensor is a system-on-chip imaging chip which is referred to as APS+. The APS+ integrates a CMOS active pixel sensor (APS) array of 368×368  pixels , a 12-b

  11. A CMOS integrated voltage and power efficient AC/DC converter for energy harvesting applications

    In this paper, a fully CMOS integrated active AC/DC converter for energy harvesting applications is presented. The rectifier is realized in a standard 0.35 µm CMOS process without special process options. It works as a full wave rectifier and can be separated into two stages—one passive and one active. The active part is powered from the storage capacitor and consumes about 600 nA at 2 V supply. The input voltage amplitude range is between 1.25 and 3.75 V, and the operating frequency range is from 1 Hz to as much as several 100 kHz. The series voltage drop over the rectifier is less than 20 mV. Measurements in combination with an electromagnetic harvester show a significant increase in the achievable output voltage and power compared to a common, discrete Schottky diode rectifier. The measured efficiency of the rectifier is over 95%. Measurements show a negligible temperature influence on the output voltage between −40 °C and +125 °C

  12. CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

    Ghafar-Zadeh, Ebrahim

    2010-01-01

    The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

  13. Extended -Regular Sequence for Automated Analysis of Microarray Images

    Jin Hee-Jeong

    2006-01-01

    Full Text Available Microarray study enables us to obtain hundreds of thousands of expressions of genes or genotypes at once, and it is an indispensable technology for genome research. The first step is the analysis of scanned microarray images. This is the most important procedure for obtaining biologically reliable data. Currently most microarray image processing systems require burdensome manual block/spot indexing work. Since the amount of experimental data is increasing very quickly, automated microarray image analysis software becomes important. In this paper, we propose two automated methods for analyzing microarray images. First, we propose the extended -regular sequence to index blocks and spots, which enables a novel automatic gridding procedure. Second, we provide a methodology, hierarchical metagrid alignment, to allow reliable and efficient batch processing for a set of microarray images. Experimental results show that the proposed methods are more reliable and convenient than the commercial tools.

  14. Design and Implementation of a Hybrid SET-CMOS Based Sequential Circuits

    Anindya Jana

    2012-05-01

    Full Text Available Single Electron Transistor is a hot cake in the present research area of VLSI design and Microelectron-ics technology. It operates through one-by-one tunneling of electrons through the channel, utilizing the Coulomb blockade Phenomenon. Due to nanoscale feature size, ultralow power dissipation, and unique Coulomb blockade oscillation characteristics it may replace Field Effect Transistor FET. SET is very much advantageous than CMOS in few points. And in few points CMOS is advantageous than SET. So it has been seen that Combination of SET and CMOS is very much effective in the nanoscale, low power VLSI circuits. This paper has given a idea to make different sequential circuits using the Hybrid SET-CMOS. The MIB model for SET and BSIM4 model for CMOS are used. The operations of the proposed circuits are verified in Tanner environment. The performances of CMOS and Hybrid SET-CMOS based circuits are compared. The hybrid SET-CMOS circuit is found to consume lesser power than the CMOS based circuit. Further it is established that hybrid SET-CMOS based circuit is much faster compared to CMOS based circuit.

  15. A toroidal inductor integrated in a standard CMOS process

    Vandi, Luca; Andreani, Pietro; Temporiti, Enrico;

    2007-01-01

    This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches...

  16. Fabrication and Characterization of CMOS-MEMS Thermoelectric Micro Generators

    Mao-Chen Liu

    2010-02-01

    Full Text Available This work presents a thermoelectric micro generator fabricated by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS process and the post-CMOS process. The micro generator is composed of 24 thermocouples in series. Each thermocouple is constructed by p-type and n-type polysilicon strips. The output power of the generator depends on the temperature difference between the hot and cold parts in the thermocouples. In order to prevent heat-receiving in the cold part in the thermocouples, the cold part is covered with a silicon dioxide layer with low thermal conductivity to insulate the heat source. The hot part of the thermocouples is suspended and connected to an aluminum plate, to increases the heat-receiving area in the hot part. The generator requires a post-CMOS process to release the suspended structures. The post-CMOS process uses an anisotropic dry etching to remove the oxide sacrificial layer and an isotropic dry etching to etch the silicon substrate. Experimental results show that the micro generator has an output voltage of 67 μV at the temperature difference of 1 K.

  17. Design for manufacturability and yield for nano-scale CMOS

    Chiang, Charles C

    2007-01-01

    Talks about the various aspects of manufacturability and yield in a nano-CMOS process and how to address each aspect at the proper design step starting with the design and layout of standard cells. This book is suitable for practicing IC designer and for graduate students intent on having a career in IC design or in EDA tool development.

  18. A CMOS Camera-Based Pulse Oximetry Imaging System

    Humphries, K.; Ward, T.; Markham, C.

    2005-01-01

    In this paper a CMOS camera-based system for non-contact pulse oximetry imaging in transmission mode is described. Attention is drawn to the current uses of conventional pulse oximetry and the potential application of pulse oximetry imaging to developing objective wound assessment systems

  19. Single-chip RF communications systems in CMOS

    Olesen, Ole

    The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

  20. Simulation toolkit with CMOS detector in the framework of hadrontherapy

    Rescigno R.

    2014-03-01

    Full Text Available Proton imaging can be seen as a powerful technique for on-line monitoring of ion range during carbon ion therapy irradiation. The protons detection technique uses, as three-dimensional tracking system, a set of CMOS sensor planes. A simulation toolkit based on GEANT4 and ROOT is presented including detector response and reconstruction algorithm.

  1. Simulation toolkit with CMOS detector in the framework of hadrontherapy

    Rescigno R.; Finck Ch.; Juliani D.; Baudot J.; Dauvergne D.; Dedes G.; Krimmer J.; Ray C.; Reithinger V.; Rousseau M.; Testa E; Winter M.

    2014-01-01

    Proton imaging can be seen as a powerful technique for on-line monitoring of ion range during carbon ion therapy irradiation. The protons detection technique uses, as three-dimensional tracking system, a set of CMOS sensor planes. A simulation toolkit based on GEANT4 and ROOT is presented including detector response and reconstruction algorithm.

  2. Photon imaging using post-processed CMOS chips

    Melai, Joost

    2010-01-01

    This thesis presents our work on an integrated photon detector made by post-processing of CMOS sensor arrays. The aim of the post-processing is to combine all elements of the detector into a single monolithic device. These elements include a photocathode to convert photon radiation into electronic s

  3. Record RF performance of standard 90 nm CMOS technology

    Tiemeijer, L.F.; Havens, R.J.; Kort, de, YAW Yvonne; Scholten, A.J.; Langevelde, van, H.J.; Klaassen, D.B.M.; Sasse, G.T.; Bouttement, Y.; Petot, C.; Bardy, S.; Gloria, D.; Scheer, P.; Boret, S.; Haaren, van, M.; Clement, C.

    2005-01-01

    We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.

  4. New source of random telegraph signal in CMOS image sensors

    Goiffon, Vincent; Magnan, Pierre; Martin-Gonthier, Philippe; Virmontois, Cédric; Gaillardin, Marc

    2012-01-01

    We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations.

  5. Study of CMOS image sensors for laser beam position detection

    We report on the study made on commercial CMOS image sensors in order to determine their feasibility for light beam position reconstruction. Measurements of the intrinsic position resolution, sensor photoresponse and uniformity were done. The effect of eventual background illumination was evaluated. The precision on the spatial point reconstruction was determined from linearity measurements. First results on gamma-ray radiation tolerance are presented

  6. ESD protection device and circuit design for advanced CMOS technologies

    Semenov, Oleg; Sachdev, Manoj

    2008-01-01

    Strategies for design-oriented ESD protectionDistributed ESD protection networks optimized for sub-90nm CMOS ICsESD protection strategies for smart power ICs used in automotive industryThe impact of burn-in testing (accelerated test methods) on the ESD robustnessThe charge board ESD (CBM) testing used for wireless products

  7. CCD AND PIN-CMOS DEVELOPMENTS FOR LARGE OPTICAL TELESCOPE.

    RADEKA, V.

    2006-04-03

    Higher quantum efficiency in near-IR, narrower point spread function and higher readout speed than with conventional sensors have been receiving increased emphasis in the development of CCDs and silicon PIN-CMOS sensors for use in large optical telescopes. Some key aspects in the development of such devices are reviewed.

  8. Thermal-Diffusivity-Based Frequency References in Standard CMOS

    Kashmiri, S.M.

    2012-01-01

    In recent years, a lot of research has been devoted to the realization of accurate integrated frequency references. A thermal-diffusivity-based (TD) frequency reference provides an alternative method of on-chip frequency generation in standard CMOS technology. A frequency-locked loop locks the outpu

  9. CMOS image sensors as an efficient platform for glucose monitoring.

    Devadhasan, Jasmine Pramila; Kim, Sanghyo; Choi, Cheol Soo

    2013-10-01

    Complementary metal oxide semiconductor (CMOS) image sensors have been used previously in the analysis of biological samples. In the present study, a CMOS image sensor was used to monitor the concentration of oxidized mouse plasma glucose (86-322 mg dL(-1)) based on photon count variation. Measurement of the concentration of oxidized glucose was dependent on changes in color intensity; color intensity increased with increasing glucose concentration. The high color density of glucose highly prevented photons from passing through the polydimethylsiloxane (PDMS) chip, which suggests that the photon count was altered by color intensity. Photons were detected by a photodiode in the CMOS image sensor and converted to digital numbers by an analog to digital converter (ADC). Additionally, UV-spectral analysis and time-dependent photon analysis proved the efficiency of the detection system. This simple, effective, and consistent method for glucose measurement shows that CMOS image sensors are efficient devices for monitoring glucose in point-of-care applications. PMID:23900281

  10. High performance flexible CMOS SOI FinFETs

    Fahad, Hossain M.

    2014-06-01

    We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

  11. Normalization for triple-target microarray experiments

    Magniette Frederic

    2008-04-01

    Full Text Available Abstract Background Most microarray studies are made using labelling with one or two dyes which allows the hybridization of one or two samples on the same slide. In such experiments, the most frequently used dyes are Cy3 and Cy5. Recent improvements in the technology (dye-labelling, scanner and, image analysis allow hybridization up to four samples simultaneously. The two additional dyes are Alexa488 and Alexa494. The triple-target or four-target technology is very promising, since it allows more flexibility in the design of experiments, an increase in the statistical power when comparing gene expressions induced by different conditions and a scaled down number of slides. However, there have been few methods proposed for statistical analysis of such data. Moreover the lowess correction of the global dye effect is available for only two-color experiments, and even if its application can be derived, it does not allow simultaneous correction of the raw data. Results We propose a two-step normalization procedure for triple-target experiments. First the dye bleeding is evaluated and corrected if necessary. Then the signal in each channel is normalized using a generalized lowess procedure to correct a global dye bias. The normalization procedure is validated using triple-self experiments and by comparing the results of triple-target and two-color experiments. Although the focus is on triple-target microarrays, the proposed method can be used to normalize p differently labelled targets co-hybridized on a same array, for any value of p greater than 2. Conclusion The proposed normalization procedure is effective: the technical biases are reduced, the number of false positives is under control in the analysis of differentially expressed genes, and the triple-target experiments are more powerful than the corresponding two-color experiments. There is room for improving the microarray experiments by simultaneously hybridizing more than two samples.

  12. CMOS Image Sensor and System for Imaging Hemodynamic Changes in Response to Deep Brain Stimulation.

    Zhang, Xiao; Noor, Muhammad S; McCracken, Clinton B; Kiss, Zelma H T; Yadid-Pecht, Orly; Murari, Kartikeya

    2016-06-01

    Deep brain stimulation (DBS) is a therapeutic intervention used for a variety of neurological and psychiatric disorders, but its mechanism of action is not well understood. It is known that DBS modulates neural activity which changes metabolic demands and thus the cerebral circulation state. However, it is unclear whether there are correlations between electrophysiological, hemodynamic and behavioral changes and whether they have any implications for clinical benefits. In order to investigate these questions, we present a miniaturized system for spectroscopic imaging of brain hemodynamics. The system consists of a 144 ×144, [Formula: see text] pixel pitch, high-sensitivity, analog-output CMOS imager fabricated in a standard 0.35 μm CMOS process, along with a miniaturized imaging system comprising illumination, focusing, analog-to-digital conversion and μSD card based data storage. This enables stand alone operation without a computer, nor electrical or fiberoptic tethers. To achieve high sensitivity, the pixel uses a capacitive transimpedance amplifier (CTIA). The nMOS transistors are in the pixel while pMOS transistors are column-parallel, resulting in a fill factor (FF) of 26%. Running at 60 fps and exposed to 470 nm light, the CMOS imager has a minimum detectable intensity of 2.3 nW/cm(2) , a maximum signal-to-noise ratio (SNR) of 49 dB at 2.45 μW/cm(2) leading to a dynamic range (DR) of 61 dB while consuming 167 μA from a 3.3 V supply. In anesthetized rats, the system was able to detect temporal, spatial and spectral hemodynamic changes in response to DBS. PMID:26357405

  13. Gene Expression Analysis Using Agilent DNA Microarrays

    Stangegaard, Michael

    2009-01-01

    Hybridization of labeled cDNA to microarrays is an intuitively simple and a vastly underestimated process. If it is not performed, optimized, and standardized with the same attention to detail as e.g., RNA amplification, information may be overlooked or even lost. Careful balancing of the amount of...... labeled cDNA added to each slide reduces dye-bias and slide to slide variation. Efficient mixing of the hybridization solution throughout the hybridization reaction increases signals several fold. The amount of near perfect target-probe hybrids may be reduced by efficient stringency washes of the...

  14. Small Sample Issues for Microarray-Based Classification

    Dougherty, Edward R

    2006-01-01

    In order to study the molecular biological differences between normal and diseased tissues, it is desirable to perform classification among diseases and stages of disease using microarray-based gene-expression values. Owing to the limited number of microarrays typically used in these studies, serious issues arise with respect to the design, performance and analysis of classifiers based on microarray data. This paper reviews some fundamental issues facing small-sample classification: classific...

  15. Novel Insights into Lung Transplant Rejection by Microarray Analysis

    Lande, Jeffrey D.; Patil, Jagadish; Li, Na; Berryman, Todd R.; King, Richard A.; Hertz, Marshall I.

    2007-01-01

    Gene expression microarrays can estimate the prevalence of mRNA for thousands of genes in a small sample of cells or tissue. Organ transplant researchers are increasingly using microarrays to identify specific patterns of gene expression that predict and characterize acute and chronic rejection, and to improve our understanding of the mechanisms underlying organ allograft dysfunction. We used microarrays to assess gene expression in bronchoalveolar lavage cell samples from lung transplant rec...

  16. DNA Microarray Assessment of Putative Borrelia burgdorferi Lipoprotein Genes

    Liang, Fang Ting; Nelson, F. Kenneth; Fikrig, Erol

    2002-01-01

    A DNA microarray containing fragments of 137 Borrelia burgdorferi B31 putative lipoprotein genes was used to examine Lyme disease spirochetes. DNA from B. burgdorferi sensu stricto B31, 297, and N40; Borrelia garinii IP90; and Borrelia afzelii P/Gau was fluorescently labeled and hybridized to the microarray, demonstrating the degree to which the individual putative lipoprotein genes were conserved among the genospecies. These data show that a DNA microarray can globally examine the genes enco...

  17. Oligonucleotide-based microarray detection of plant viruses

    Šíp, M.; Bystřická, Dagmar; Lenz, Ondřej; Mráz, Ivan; Piherová, L.; Kmoch, S.

    Gdansk : Faculty of Biotechnology University of Gdansk, 2005. s. 12. [Meeting COST 853 Agricultural Biomarkers for Array-Technology: WG1 Nucleic acid microarrays, WG2 Protein microarrays. 19.06.2005-21.06.2005, Gdansk] R&D Projects: GA ČR GA522/01/1105; GA MŠk OC 853.002 Keywords : biomarkers * microarrays Subject RIV: EE - Microbiology, Virology

  18. A comparative analysis of DNA barcode microarray feature size

    Smith Andrew M; Ammar Ron; Heisler Lawrence E; Giaever Guri; Nislow Corey

    2009-01-01

    Abstract Background Microarrays are an invaluable tool in many modern genomic studies. It is generally perceived that decreasing the size of microarray features leads to arrays with higher resolution (due to greater feature density), but this increase in resolution can compromise sensitivity. Results We demonstrate that barcode microarrays with smaller features are equally capable of detecting variation in DNA barcode intensity when compared to larger feature sizes within a specific microarra...

  19. Innovative DNA microarray design for bacterial flora composition evaluation

    Huyghe, Antoine

    2009-01-01

    During the past decade, the advent of new molecular techniques has led to enormous progress in biology, notably with the development of DNA microarray technology. This technology allows monitoring simultaneously the expression of thousands of genes from a given organism. DNA microarrays have been used in a variety of applications, including the characterization of bacteria in biological samples. In this thesis, two distinct DNA microarray approaches for the characterization of bacterial flora...

  20. Miniaturised Spotter-Compatible Multicapillary Stamping Tool for Microarray Printing

    Drobyshev, A L; Zasedatelev, A S; Drobyshev, Alexei L; Verkhodanov, Nikolai N; Zasedatelev, Alexander S

    2007-01-01

    Novel microstamping tool for microarray printing is proposed. The tool is capable to spot up to 127 droplets of different solutions in single touch. It is easily compatible with commercially available microarray spotters. The tool is based on multichannel funnel with polypropylene capillaries inserted into its channels. Superior flexibility is achieved by ability to replace any printing capillary of the tool. As a practical implementation, hydrogel-based microarrays were stamped and successfully applied to identify the Mycobacterium tuberculosis drug resistance.

  1. Biocompatible polymer microarrays for cellular high-content screening

    Pernagallo, Salvatore

    2010-01-01

    The global aim of this thesis was to study the use of microarray technology for the screening and identification of biocompatible polymers, to understand physiological phenomena, and the design of biomaterials, implant surfaces and tissue-engineering scaffolds. This work was based upon the polymer microarray platform developed by the Bradley group. Polymer microarrays were successfully applied to find the best polymer supports for: (i) mouse fibroblast cells and used to eval...

  2. Probe Selection for DNA Microarrays using OligoWiz

    Wernersson, Rasmus; Juncker, Agnieszka; Nielsen, Henrik Bjørn

    Nucleotide abundance measurements using DNA microarray technology are possible only if appropriate probes complementary to the target nucleotides can be identified. Here we present a protocol for selecting DNA probes for microarrays using the OligoWiz application. OligoWiz is a client...... computer skills and can be executed from any Internet-connected computer. The probe selection procedure for a standard microarray design targeting all yeast transcripts can be completed in 1 h....

  3. Refractive index change detection based on porous silicon microarray

    Chen, Weirong; Jia, Zhenhong; Li, Peng; Lv, Guodong; Lv, Xiaoyi

    2016-05-01

    By combining photolithography with the electrochemical anodization method, a microarray device of porous silicon (PS) photonic crystal was fabricated on the crystalline silicon substrate. The optical properties of the microarray were analyzed with the transfer matrix method. The relationship between refractive index and reflectivity of each array element of the microarray at 633 nm was also studied, and the array surface reflectivity changes were observed through digital imaging. By means of the reflectivity measurement method, reflectivity changes below 10-3 can be observed based on PS microarray. The results of this study can be applied to the detection of biosensor arrays.

  4. Progress in voltage and current mode on-chip analog-to-digital converters for CMOS image sensors

    Panicacci, Roger; Pain, Bedabrata; Zhou, Zhimin; Nakamura, Junichi; Fossum, Eric R.

    1996-03-01

    Two 8 bit successive approximation analog-to-digital converter (ADC) designs and a 12 bit current mode incremental sigma delta ((Sigma) -(Delta) ) ADC have been designed, fabricated, and tested. The successive approximation test chip designs are compatible with active pixel sensor (APS) column parallel architectures with a 20.4 micrometers pitch in a 1.2 micrometers n-well CMOS process and a 40 micrometers pitch in a 2 micrometers n-well CMOS process. The successive approximation designs consume as little as 49 (mu) W at a 500 KHz conversion rate meeting the low power requirements inherent in column parallel architectures. The current mode incremental (Sigma) -(Delta) ADC test chip is designed to be multiplexed among 8 columns in a semi-column parallel current mode APS architecture. The higher accuracy ADC consumes 800 (mu) W at a 5 KHz conversion rate.

  5. An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

    Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

    2014-01-01

    This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

  6. Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

    In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80μm×16μm was fabricated in a 0.18μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors

  7. A low-power and small-area column-level ADC for high frame-rate CMOS pixel sensor

    Zhang, L.; Morel, F.; Hu-Guo, C.; Hu, Y.

    2014-07-01

    CMOS pixel sensors (CPS) have demonstrated performances meeting the specifications of the International Linear Collider (ILC) vertex detector (VTX). This paper presents a low-power and small-area 4-bit column-level analog-to-digital converter (ADC) for CMOS pixel sensors. The ADC employs a self-timed trigger and completes the conversion by performing a multi-bit/step approximation. As in the outer layers of the ILC vertex detector hit density is of the order of a few per thousand, in order to reduce power consumption, the ADC is designed to work in two modes: active mode and idle mode. The ADC is fabricated in a 0.35 μm CMOS process with a pixel pitch of 35 μm. It is implemented with 48 columns in a sensor prototype. Each column ADC covers an area of 35 ×545 μm2. The measured temporal noise and Fixed Pattern Noise (FPN) are 0.96 mV and 0.40 mV, respectively. The power consumption, for a 3 V supply and 6.25 MS/s sampling rate, is 486 μW during idle time, which is by far the most frequently employed one. This value rises to 714 μW in the case of the active mode. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.49/-0.28 LSB and 0.29/-0.20 LSB, respectively.

  8. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Pellion, D.; Jradi, K.; Brochard, N. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France); Prêle, D. [APC – CNRS/Univ. Paris Diderot, Paris (France); Ginhac, D. [Le2i – CNRS/Univ. de Bourgogne, Dijon (France)

    2015-07-01

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm{sup 2}) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s{sup −1} while it is 270 count s{sup −1} at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment

  9. Single-Photon Avalanche Diodes (SPAD) in CMOS 0.35 µm technology

    Some decades ago single photon detection used to be the terrain of photomultiplier tube (PMT), thanks to its characteristics of sensitivity and speed. However, PMT has several disadvantages such as low quantum efficiency, overall dimensions, and cost, making them unsuitable for compact design of integrated systems. So, the past decade has seen a dramatic increase in interest in new integrated single-photon detectors called Single-Photon Avalanche Diodes (SPAD) or Geiger-mode APD. SPAD are working in avalanche mode above the breakdown level. When an incident photon is captured, a very fast avalanche is triggered, generating an easily detectable current pulse. This paper discusses SPAD detectors fabricated in a standard CMOS technology featuring both single-photon sensitivity, and excellent timing resolution, while guaranteeing a high integration. In this work, we investigate the design of SPAD detectors using the AMS 0.35 µm CMOS Opto technology. Indeed, such standard CMOS technology allows producing large surface (few mm2) of single photon sensitive detectors. Moreover, SPAD in CMOS technologies could be associated to electronic readout such as active quenching, digital to analog converter, memories and any specific processing required to build efficient calorimeters (Silicon PhotoMultiplier – SiPM) or high resolution imagers (SPAD imager). The present work investigates SPAD geometry. MOS transistor has been used instead of resistor to adjust the quenching resistance and find optimum value. From this first set of results, a detailed study of the dark count rate (DCR) has been conducted. Our results show a dark count rate increase with the size of the photodiodes and the temperature (at T=22.5 °C, the DCR of a 10 µm-photodiode is 2020 count s−1 while it is 270 count s−1 at T=−40 °C for a overvoltage of 800 mV). A small pixel size is desirable, because the DCR per unit area decreases with the pixel size. We also found that the adjustment of overvoltage is

  10. Laser direct writing of biomolecule microarrays

    Serra, P.; Fernández-Pradas, J. M.; Berthet, F. X.; Colina, M.; Elvira, J.; Morenza, J. L.

    Protein-based biosensors are highly efficient tools for protein detection and identification. The production of these devices requires the manipulation of tiny amounts of protein solutions in conditions preserving their biological properties. In this work, laser induced forward transfer (LIFT) was used for spotting an array of a purified bacterial antigen in order to check the viability of this technique for the production of protein microarrays. A pulsed Nd:YAG laser beam (355 nm wavelength, 10 ns pulse duration) was used to transfer droplets of a solution containing the Treponema pallidum 17 kDa protein antigen on a glass slide. Optical microscopy showed that a regular array of micrometric droplets could be precisely and uniformly spotted onto a solid substrate. Subsequently, it was proved that LIFT deposition of a T. pallidum 17 kDa antigen onto nylon-coated glass slides preserves its antigenic reactivity and diagnostic properties. These results support that LIFT is suitable for the production of protein microarrays and pave the way for future diagnostics applications.

  11. High-Voltage-Input Level Translator Using Standard CMOS

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  12. Ni based silicides for 45 nm CMOS and beyond

    Lauwers, Anne [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)]. E-mail: lauwersa@imec.be; Kittl, Jorge A. [IMEC, Texas Instruments (Belgium); Van Dal, Mark J.H. [IMEC, Philips Research Leuven (Belgium); Chamirian, Oxana [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Pawlak, Malgorzata A. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Potter, Muriel de [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Lindsay, Richard [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Raymakers, Toon [Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven (Netherlands); Pages, Xavier [IMEC, ASM Belgium (Belgium); Mebarki, Bencherki [Applied Materials (Belgium); Mandrekar, Tushar [Applied Materials Inc., Santa Clara, CA (United States); Maex, Karen [IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2004-12-15

    Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni{sub 2}Si and NiSi on single-crystalline and poly-crystalline silicon and the thermal degradation mechanisms. Ni{sub 2}Si was found to grow by diffusion controlled kinetics with an activation energy of about 1.55 eV on single-crystalline Si. As a result, the excessive silicidation in small features can be reduced in a 2-step Ni-silicide process by reducing the thermal budget of the first RTP step. The mechanisms of thermal degradation of NiSi were studied. Thin NiSi films were found to degrade morphologically while still in the monosilicide phase. Thick NiSi films degrade morphologically at low temperatures and by transformation to NiSi{sub 2} at high temperatures. The reaction of Ni with SiGe substrates and the effect of Ge on the thermal degradation of the Ni-germanosilicide were investigated. Activation energies for the thermal degradation of Ni(SiGe) on SiGe were found to be significantly smaller than the values found for the thermal degradation of NiSi on pure Si. The effect of alloying Ni with Pt or Ta was studied. NiSi films alloyed with Pt or Ta are found to be thermally more stable compared to pure NiSi. Alloying with Pt was found to improve the thermal stability of NiSi on narrow poly-Si gates. The kinetics of Ni{sub 2}Si and NiSi formation on poly silicon were determined as well as their dependence on dopants. The presence of B in high doses was found to slow down the silicide formation significantly. Dopant segregation to the NiSi/oxide interface was observed, which is believed to be responsible for the observed shifts in work function. The sheet resistance of fully Ni-silicided 100 nm poly Si/oxide stacks is found to be stable up to 800 deg. C.

  13. Ni based silicides for 45 nm CMOS and beyond

    Material issues that impact the applicability of Ni based silicides to CMOS flows were studied, including the excessive silicidation of narrow features, the growth kinetics of Ni2Si and NiSi on single-crystalline and poly-crystalline silicon and the thermal degradation mechanisms. Ni2Si was found to grow by diffusion controlled kinetics with an activation energy of about 1.55 eV on single-crystalline Si. As a result, the excessive silicidation in small features can be reduced in a 2-step Ni-silicide process by reducing the thermal budget of the first RTP step. The mechanisms of thermal degradation of NiSi were studied. Thin NiSi films were found to degrade morphologically while still in the monosilicide phase. Thick NiSi films degrade morphologically at low temperatures and by transformation to NiSi2 at high temperatures. The reaction of Ni with SiGe substrates and the effect of Ge on the thermal degradation of the Ni-germanosilicide were investigated. Activation energies for the thermal degradation of Ni(SiGe) on SiGe were found to be significantly smaller than the values found for the thermal degradation of NiSi on pure Si. The effect of alloying Ni with Pt or Ta was studied. NiSi films alloyed with Pt or Ta are found to be thermally more stable compared to pure NiSi. Alloying with Pt was found to improve the thermal stability of NiSi on narrow poly-Si gates. The kinetics of Ni2Si and NiSi formation on poly silicon were determined as well as their dependence on dopants. The presence of B in high doses was found to slow down the silicide formation significantly. Dopant segregation to the NiSi/oxide interface was observed, which is believed to be responsible for the observed shifts in work function. The sheet resistance of fully Ni-silicided 100 nm poly Si/oxide stacks is found to be stable up to 800 deg. C

  14. Measuring the X-ray quantum efficiency of a hybrid CMOS detector with 55Fe

    Bongiorno, S. D.; Falcone, A. D.; Prieskorn, Z.; Griffith, C.; Burrows, D. N.

    2015-06-01

    Charge coupled devices (CCDs) are currently the workhorse focal plane arrays operating aboard many orbiting astrophysics X-ray telescopes, e.g. Chandra, XMM-Newton, Swift, and Suzaku. In order to meet the count rate, power, and mission duration requirements defined by next-generation X-ray telescopes, future detectors will need to be read out faster, consume less power, and be more resistant to radiation and micrometeoroid damage than current-generation devices. The hybrid CMOS detector (HCD), a type of active pixel sensor, is currently being developed to meet these requirements. With a design architecture that involves bump bonding two semiconductor substrates together at the pixel level, these devices exhibit both the high read speed and low power consumption of CMOS readout circuitry and the high quantum efficiency (QE) of a deeply depleted silicon absorber. These devices are expected to exhibit the same excellent, high-energy quantum efficiency (QE) as deep-depletion CCDs (QE > 0.9 at 6 keV), while at the same time exhibiting superior readout flexibility, power consumption, and radiation hardness than CCDs. In this work we present a QE model for a Teledyne Imaging Sensors HyViSI HCD, which predicts QE=96% at 55Fe source energies (5.89 and 6.49 keV). We then present a QE measurement of the modeled device at the same energies, which shows QE=97±5% and is in good agreement with the model.

  15. Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band

    Prieskorn, Zachary; Griffith, C.; Bongiorno, S.; Falcone, A.; Burrows, D. N.

    2014-01-01

    In a joint program between Penn State University and Teledyne Imaging Sensors a soft X-ray detector based on the HAWAII Hybrid Si CMOS detector (HCD) has been developed. HCDs could potentially be the optimum detectors for the next generation of X-ray missions, especially those with focused optics and/or large effective area. These innovative detectors are active pixel sensors (APS) which allow a pixel to be read through individual in-pixel electronics, without the need to transfer charge across many pixels, in contrast to a CCD. They are made by bonding a Si absorbing layer to a pixelated CMOS readout, allowing the two layers to be optimized independently. The advantages of this design compared to CCDs are high speed timing 100 μs in full imaging mode), a flexible windowed readout to reduce pile-up, dramatically improved radiation hardness and resistance to micrometeoroid damage, and reduced power requirements. We present recent measurements of energy resolution, read noise, inter-pixel crosstalk, quantum efficiency, and dark current for four of these devices.

  16. A high efficiency PWM CMOS class-D audio power amplifier

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 x 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  17. A high efficiency PWM CMOS class-D audio power amplifier

    Zhangming, Zhu; Lianxi, Liu; Yintang, Yang; Han, Lei

    2009-02-01

    Based on the difference close-loop feedback technique and the difference pre-amp, a high efficiency PWM CMOS class-D audio power amplifier is proposed. A rail-to-rail PWM comparator with window function has been embedded in the class-D audio power amplifier. Design results based on the CSMC 0.5 μm CMOS process show that the max efficiency is 90%, the PSRR is -75 dB, the power supply voltage range is 2.5-5.5 V, the THD+N in 1 kHz input frequency is less than 0.20%, the quiescent current in no load is 2.8 mA, and the shutdown current is 0.5 μA. The active area of the class-D audio power amplifier is about 1.47 × 1.52 mm2. With the good performance, the class-D audio power amplifier can be applied to several audio power systems.

  18. DNA Microarray Analysis of Gene Expression in Antifungal Bacterium of Bacillus lenthmorbus WJ5

    This simultaneous expression levels of antifungal activity related was analyzed by DNA microarray. We constructured DNA chips contained 2,000 randomly digested genome spots of the antifungal bacterium of Bacillus lentimorbus WJ5 and compared it squantitative aspect with 7 antifungal activity deficient mutants induced by gamma radiation . From the analysis of microarray hybridization by the Gene Cluster, totally 408 genes were expressed and 20 genes among them were significantly suppressed in mutants. pbuX, ywbA, ptsG,yufO, and ftsY were simultaneously down-regulated in all muatants. It suggested that they were supposed to be related to the antifungal activity of B. lentimorbus WJ5

  19. Shared probe design and existing microarray reanalysis using PICKY

    Chou Hui-Hsien

    2010-04-01

    Full Text Available Abstract Background Large genomes contain families of highly similar genes that cannot be individually identified by microarray probes. This limitation is due to thermodynamic restrictions and cannot be resolved by any computational method. Since gene annotations are updated more frequently than microarrays, another common issue facing microarray users is that existing microarrays must be routinely reanalyzed to determine probes that are still useful with respect to the updated annotations. Results PICKY 2.0 can design shared probes for sets of genes that cannot be individually identified using unique probes. PICKY 2.0 uses novel algorithms to track sharable regions among genes and to strictly distinguish them from other highly similar but nontarget regions during thermodynamic comparisons. Therefore, PICKY does not sacrifice the quality of shared probes when choosing them. The latest PICKY 2.1 includes the new capability to reanalyze existing microarray probes against updated gene sets to determine probes that are still valid to use. In addition, more precise nonlinear salt effect estimates and other improvements are added, making PICKY 2.1 more versatile to microarray users. Conclusions Shared probes allow expressed gene family members to be detected; this capability is generally more desirable than not knowing anything about these genes. Shared probes also enable the design of cross-genome microarrays, which facilitate multiple species identification in environmental samples. The new nonlinear salt effect calculation significantly increases the precision of probes at a lower buffer salt concentration, and the probe reanalysis function improves existing microarray result interpretations.

  20. Design of an Enterobacteriaceae Pan-genome Microarray Chip

    Lukjancenko, Oksana; Ussery, David

    2010-01-01

    -density microarray chip has been designed, using 116 Enterobacteriaceae genome sequences, taking into account the enteric pan-genome. Probes for the microarray were checked in silico and performance of the chip, based on experimental strains from four different genera, demonstrate a relatively high ability...