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Sample records for active capacitive voltage

  1. Voltage Dependence of Supercapacitor Capacitance

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  2. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Ljusev, P.; Andersen, Michael A.E.

    2005-07-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  3. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase effic...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented.......This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...

  4. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacit...

  5. Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

    Ljusev, P.

    2004-03-15

    In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In order to solve the problem with the commutation of the load current, a dead time between the incoming and outgoing bidirectional switch is implemented, while a capacitive voltage clamp is used to keep the induced overvoltage to reasonable levels. The energy stored in the clamping capacitor is not wasted as in the dissipative clamps, but is rather transferred back to the primary side for further processing using an auxiliary isolated single-switch converter, i.e. an active clamping technique is used. (au)

  6. Class D audio amplifiers for high voltage capacitive transducers

    Nielsen, Dennis

    implications of driving the non-linear transducer of the DEAP. 2-level modulated high voltage amplifiers driving the capacitive load of the DEAP transducer are addressed in chapter 4. An amplifier with fourth order output filter and full-state self-oscillating hysteresis based control loop is proposed...... on a silicone film. As a consequence a capacitive transducer emerges, which can be shaped into the loudspeaker membrane itself, rolled up into a transducer driving a membrane or being part of an active suspension system for the membrane. In order to document the full potential of the DEAP transducer, suitable....... Due to the similarities between the electrostatic loudspeaker and the DEAP transducer, the state-of-the-art has a special focus on amplifiers for electrostatic loudspeakers. Amplifiers for other type of capacitive transducers like piezoelectric ones are also considered. Finally the current state...

  7. Composite metal-oxide device has voltage sensitive capacitance

    Mattauch, R. J.; Viola, T. J., Jr.

    1970-01-01

    Device with step function variation of the capacitance is useful for voltage-controlled oscillator circuits and as a voltage-sensitive switch. Simplicity of construction makes the device suitable for large-scale integration, microelectronic circuits.

  8. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail......, including linear as well as switched mode amplifiers. In the past much attention has been paid on the driver for piezoelectric actuator. As DEAP is a type of new material, there is not much literature reference for it....

  9. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO{sub 2} by capacitance voltage measurement on inverted metal oxide semiconductor structure

    Zhang, Tian, E-mail: tianz@student.unsw.edu.au; Puthen-Veettil, Binesh; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Yang, Terry Chien-Jen; Conibeer, Gavin; Perez-Wurfl, Ivan [Australian Centre for Advanced Photovoltaics, UNSW Australia, Kensington, New South Wales 2052 (Australia)

    2015-10-21

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO{sub 2}. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO{sub 2}/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 10{sup 18}–10{sup 19 }cm{sup −3} despite their high resistivity. The saturation of doping at about 1.4 × 10{sup 19 }cm{sup −3} and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10{sup −3} cm{sup 2}/V s, indicating strong impurity/defect scattering effect that hinders carriers transport.

  10. Determination of active doping in highly resistive boron doped silicon nanocrystals embedded in SiO2 by capacitance voltage measurement on inverted metal oxide semiconductor structure

    We investigate the Capacitance-Voltage (CV) measurement to study the electrically active boron doping in Si nanocrystals (ncSi) embedded in SiO2. The ncSi thin films with high resistivity (200–400 Ω cm) can be measured by using an inverted metal oxide semiconductor (MOS) structure (Al/ncSi (B)/SiO2/Si). This device structure eliminates the complications from the effects of lateral current flow and the high sheet resistance in standard lateral MOS structures. The characteristic MOS CV curves observed are consistent with the effective p-type doping. The CV modeling method is presented and used to evaluate the electrically active doping concentration. We find that the highly boron doped ncSi films have electrically active doping of 1018–1019 cm−3 despite their high resistivity. The saturation of doping at about 1.4 × 1019 cm−3 and the low doping efficiency less than 5% are observed and discussed. The calculated effective mobility is in the order of 10−3 cm2/V s, indicating strong impurity/defect scattering effect that hinders carriers transport

  11. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... low power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power...

  12. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    in a number of applications. In this paper, the discharging energy efficiency definition is introduced. The proposed converter has been experimentally tested with the film capacitive load and the DEAP actuator, and the experimental results are shown together with the efficiency measurements.......This paper presents a high voltage DC-DC converter topology for bi-directional energy transfer between a low voltage DC source and a high voltage capacitive load. The topology is a bi-directional flyback converter with variable switching frequency control during the charge mode, and constant...... switching frequency control during the discharge mode. The converter is capable of charging the capacitive load from 24 V DC source to 2.5 kV, and discharges it to 0 V. The flyback converter has been analyzed in detail during both charge and discharge modes, by considering all the parasitic elements in the...

  13. MOS Capacitance-Voltage Characteristics:V.Methods to Enhance the Trapping Capacitance

    揭斌斌; 薩支唐

    2012-01-01

    Low-frequency and High-frequency Capacitance-Voltage (C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generationrecombination-trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

  14. Remote gate capacitance-voltage studies for noninvasive surface characterization

    Chang, R. R.; Lile, D. L.; Gann, R.

    1987-01-01

    A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes about 0.5 mm in diameter and gate to semiconductor separations of about 1500 A, it was possible to generate data entirely comparable to that obtained with integrated MIS structures but with the advantage that there was access directly to the free-semiconductor surface. This technique was applied to bulk single-crystal Si and InP samples.

  15. MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier,or one-energy-level impurity species.Models described include a donor electron trap and an acceptor hole trap,both donors,both acceptors,both shallow energy levels,both deep,one shallow and one deep,and the identical donor and acceptor.Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

  16. Active Targets For Capacitive Proximity Sensors

    Jenstrom, Del T.; Mcconnell, Robert L.

    1994-01-01

    Lightweight, low-power active targets devised for use with improved capacitive proximity sensors described in "Capacitive Proximity Sensor Has Longer Range" (GSC-13377), and "Capacitive Proximity Sensors With Additional Driven Shields" (GSC-13475). Active targets are short-distance electrostatic beacons; they generate known alternating electro-static fields used for alignment and/or to measure distances.

  17. Digital control of a high-voltage (2.5 kV) bidirectional DC-DC converter for driving a dielectric electro active polymer (DEAP) based capacitive actuator

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.;

    2014-01-01

    the valley switchingtechnique during both charge and discharge processes, withoutthe need to sense signals on the output high-voltage side.Experimental results verifying the bidirectional operation of asingle high voltage flyback converter are presented, using afilm capacitor as the load. Energy......This paper presents a digital control technique toachieve valley switching in a bidirectional flyback converterused to drive a dielectric electro active polymer basedincremental actuator. The incremental actuator consists ofthree electrically isolated, mechanically connected capacitiveactuators....... The incremental actuator requires three highvoltage (~2.5 kV) bidirectional DC-DC converters, toaccomplish the incremental motion by charging anddischarging the capacitive actuators. The bidirectional flybackconverter employs a digital controller to improve efficiencyand charge/discharge speed using...

  18. Capacitance-voltage characteristics of quantum well structures

    Moon, C R; Choe, B D

    1999-01-01

    The characteristics of the apparent carrier distribution (ACD) of quantum well (QW) structures are investigated using the self-consistent simulation and the capacitance-voltage (C-V) profiling techniques. The simulation results on the differential carrier distribution show that the change of position expectation value of two-dimensional electrons determines the full width at half maximum of 100 K ACD peaks when conduction band offset is DELTA E sub c = 160 meV and the QW width t sub w is greater than 120 A. The contribution of Debye averaging effects to the ACD peaks becomes important as t sub w and DELTA E sub c values decrease and the temperature is increased. The influence of Debye averaging effects on ACD peaks appears differently according to the location of each well in multiple QWs. These results indicate that the extraction of QW parameters from the C-V profile should be done with caution.

  19. Bidirectional Flyback Converter with Multiple Series Connected Outputs for High Voltage Capacitive Charge and Discharge Applications

    Thummala, Prasanth; Schneider, Henrik; Zhang, Zhe;

    2015-01-01

    This paper evaluates two different implementations of a bidirectional flyback converter for driving a capacitive electro active actuator, which must be charged and discharged from 0 V to 2.5 kV DC and vice versa, supplied from a 24 V battery. In one implementation, a high voltage MOSFET (4 kV) in...... by lower voltage rating MOSFETs driven by a gate drive transformer. Simulation results to compare the operation of conventional and proposed converters are provided. The advantages of proposed implementation are improved energy efficiency and lower cost. Experimental results with two series connected...

  20. Detection of Telomerase Activity Using Capacitance Measurements

    Kang, Bong Keun; Lee, Ri Mi; Choi, Ahmi; Jung, Hyo-Il; Yoo, Kyung-Hwa

    2007-03-01

    Telomerase activity has been found in about 85% cancer cells, while no activity observed in normal cells, so that telomerase has been proposed as a marker for cancer detection. Here, we describe electrical detection of telomerase activity using capacitance measurements. We have investigated the length dependence of capacitance on DNA solutions and found that the capacitance of DNA solutions were dependent on the DNA length. In addition, upon adding telomerase into the solution of telomeric substrate primer, the capacitance was observed to change as a function of time due to the telomeric elongation. These results suggest that this novel nanosensor may be used for rapid detection of telomerase activity.

  1. Measurement of voltage dependence of capacitance of planar bilayer lipid membrane with a patch clamp amplifier.

    Toyama, S.; Nakamura, A; Toda, F

    1991-01-01

    The voltage dependence of capacitance was measured by using the setup which was almost the same as that for the study of ion channels. The coefficient which represents the voltage dependence of capacitance itself also changes as a function of the duration of voltage application if hexadecane is contained in bilayer lipid membrane (BLM). The method of Alvarez, O., and R. Latorre (1978. Biophys. J. 21:1-17) was extended to treat BLM with hexadecane.

  2. On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode Capacitance and Transfer Gate Channel Potential

    Goiffon, Vincent; Michelot, Julien; Magnan, Pierre; Estribeau, Magali; Marcelot, Olivier; Cervantes, Paola; Pelamatti, Alice; Martin-Gonthier, Philippe

    2013-01-01

    The pinning voltage extraction method proposed by Tan et al. is analyzed to clarify its benefits and limitations. It is demonstrated that this simple measurement can bring much more useful information than the pinning voltage, such as the pinned photodiode capacitance and the transfer gate channel potential. Objective criteria to compare the pinning voltage on different devices are also discussed.

  3. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  4. Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

    Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M.; Aubin, J.; Hartmann, J. M.; Veillerot, M.

    2016-04-01

    The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C2 versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.

  5. A system for measuring thermal activation energy levels in silicon by thermally stimulated capacitance

    Cockrum, R. H.

    1982-01-01

    One method being used to determine energy level(s) and electrical activity of impurities in silicon is described. The method is called capacitance transient spectroscopy (CTS). It can be classified into three basic categories: the thermally stimulated capacitance method, the voltage-stimulated capacitance method, and the light-stimulated capacitance method; the first two categories are discussed. From the total change in capacitance and the time constant of the capacitance response, emission rates, energy levels, and trap concentrations can be determined. A major advantage of using CTS is its ability to detect the presence of electrically active impurities that are invisible to other techniques, such as Zeeman effect atomic absorption, and the ability to detect more than one electrically active impurity in a sample. Examples of detection of majority and minority carrier traps from gold donor and acceptor centers in silicon using the capacitance transient spectrometer are given to illustrate the method and its sensitivity.

  6. Effect of ion implantation on capacitance-voltage properties of MOS structures

    The effect of rare gas ions, such as Xe+ and Kr+, implanted in the oxide of MOS diodes on the capacitance-voltage properties and triangular voltage stressing has been studied. Results obtained are presented and discussed in terms of interface states and mobility of oxide charges

  7. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize the...

  8. Active resistance capacitance filter design

    Kerwin, W. J.

    1970-01-01

    Filters, formed by combinations of distributed RC elements with positive-feedback voltage amplifiers, provide transfer functions similar to those the heavier LC filters ordinarily employ. They also provide signal amplification.

  9. Design of a High Voltage Bidirectional DC-DC Converter for Driving Capacitive Incremental Actuators usable in Electric Vehicles (EVs)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.; Maksimovic, Dragan; Sarban, Rahimullah

    2014-01-01

    This paper presents the design of a low input (24 V) and variable high output voltage (0-2.5 kV) bidirectional dc-dc converter for driving a capacitive actuator. The topology is a digitally controlled bidirectional flyback converter with a variable frequency control. The objective is, to design the converter for efficiently charging and discharging the capacitive actuator from 0 V to 2.5 kV and vice versa, respectively. The converter is used to drive a dielectric electro active polymer (DEAP)...

  10. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

    2001-01-01

    Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the processand cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

  11. A capacitive level shifter for high voltage (2.5kV)

    Andersen, Thomas; Andersen, Michael A. E.; Thomsen, Ole Cornelius;

    2012-01-01

    with focus on low power consumption as well as low capacitive load between the floating half-bridge node and ground (output capacitance). The operation of the level-shifter is tested and verified by measurements on a prototype half-bridge gate driver. Results conclude stabile operation at 2.44kV, 50k......A capacitive level-shifter as a part of a high voltage halfbridge gate driver is resented in this work. The levelshifter utilizes a differential capacitor pair to transfer the information from low side to high side. A thorough evaluation of the critical parts of the level-shifter is presented......Hz with a current consumption of 0.5mA. Operation voltage was limited by test equipment. The output capacitance is 4pF@1.5kV....

  12. Voltage dependence of the differential capacitance of a p+-n junction

    The dependences of the differential capacitance and current of a p+-n junction with a uniformly doped n region on the voltage in the junction region are calculated. The p+-n junction capacitance controls the charge change in the junction region taking into account a change in the electric field of the quasi-neutral n region and a change in its bipolar drift mobility with increasing excess charge-carrier concentration. It is shown that the change in the sign of the p+-n junction capacitance with increasing injection level is caused by a decrease in the bipolar drift mobility as the electron-hole pair concentration in the n region increases. It is shown that the p+-n junction capacitance decreases with increasing reverse voltage and tends to a constant positive value.

  13. Effect of Solar Array Capacitance on the Performance of Switching Shunt Voltage Regulator

    Kumar, Anil R; Suresh, MS; Nagaraju, J

    2006-01-01

    Due to high power demand photovoltaic regulators are being switched at high frequency. The solar cell capacitance increases the ripple voltage of the switching regulators at higher switching frequencies. Increased ripple due to array capacitance is calculated and its effect in limiting the maximum design switching frequency is studied. An experimental switching regulator is designed and used to confirm the theoretical considerations. This study has identified a method of solar cell capacitanc...

  14. Research and Experiments on a Unipolar Capacitive Voltage Sensor.

    Zhou, Qiang; He, Wei; Li, Songnong; Hou, Xingzhe

    2015-01-01

    Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid. PMID:26307992

  15. Voltage-Programming-Based Pixel Circuit to Compensate for Threshold Voltage and Mobility Using Natural Capacitance of Organic Light-Emitting Diode

    Young-Ju Park,; Myoung-Hoon Jung,; Sang-Ho Park,; Ohyun Kim,

    2010-03-01

    A voltage-programming-based pixel circuit with three thin-film transistors (TFTs) and one capacitor (3T1C) is proposed and simulated for active-matrix organic light-emitting diode (AMOLED) displays. Unlike the previously published voltage-programming pixel circuits, which only compensate for threshold voltage (VT) unevenness, this circuit also compensates for mobility (μ) unevenness. OLEDs can be used not only as light-emitting devices but also as capacitors. This circuit uses the natural capacitance of OLEDs to compensate for the mobility unevenness. The Rensselaer Polytechnic Institute (RPI) model of smart simulation program with integrated circuit emphasis (SMART SPICE) is used to simulate the circuit. Moreover, we propose another pixel circuit that consists of three TFTs and two capacitors (3T2C). The additional capacitor allows control of the range of the data voltage of each color.

  16. DC Voltage Control Strategy for CHB-STATCOM during Capacitive-Inductive Load Transition

    Bo Zhao

    2012-11-01

    Full Text Available Fluctuation of DC capacitor voltage of CHC-STATCOM(Cascaded H-Bridge Converter Based STATCOM during capacitive-inductive load transition affects the dynamic response of the equipment and, with combination of other factors like of the switching devices, can degrade the stability of the equipment. This paper illustrates the cause ofthe voltage fluctuation and proposes a novel and practical control strategy to suppress it. A simulation was conducted to testify its effectiveness.

  17. DC Voltage Control Strategy for CHB-STATCOM during Capacitive-Inductive Load Transition

    Bo Zhao; Yong Wang; Weiming Zhao

    2012-01-01

    Fluctuation of DC capacitor voltage of CHC-STATCOM(Cascaded H-Bridge Converter Based STATCOM) during capacitive-inductive load transition affects the dynamic response of the equipment and, with combination of other factors like of the switching devices, can degrade the stability of the equipment. This paper illustrates the cause ofthe voltage fluctuation and proposes a novel and practical control strategy to suppress it. A simulation was conducted to testify its effectiveness.

  18. A method for the extraction of the voltage-dependent quantum capacitance of carbon nanotubes using ab initio simulations

    In this paper, a method to obtain the quantum capacitance of carbon nanotubes (CNTs) using ab initio simulations is presented. As an example of the usage of the proposed method, the quantum capacitance of a metallic (6,6) CNT section is calculated. The quantum capacitance is extracted for various bias voltages applied to metallic CNT interconnects in the range 0-2.5 V, which is the operating voltage range of VLSI circuits. The obtained quantum capacitance values are found to be in good agreement with the experimental values. The average Fermi velocity of electrons dependent on the bias voltage is also obtained and plotted.

  19. Modeling accumulation capacitance-voltage characteristic of MoS2 thin flake transistors

    We report a theoretical investigation on the accumulation capacitance in MoS2 thin flake transistors using a two-valley band structure. To obtain the relevant two-valley band structure parameters, first-principles calculations are performed. Then, the capacitance-voltage characteristic in the accumulation layer is simulated by a self-consistent Poisson–Schrödinger solution. It is found that the occupation of the K valley in the conduction band has a significant contribution to the accumulation capacitance, especially in the strong accumulation layer. More importantly, the calculated results using a two-valley band structure is in good agreement with the published experimental data without any fitting parameters, highlighting that the inclusion of both the Q and K conduction band valley is necessary to understand the accumulation capacitance in the strong accumulation region. (paper)

  20. Selective virtual capacitive impedance loop for harmonics voltage compensation in islanded microgrids

    Micallef, Alexander; Apap, Maurice; Spiteri-Staines, Cyril;

    2013-01-01

    Parallel inverters having LCL output filters cause voltage distortions at the point of common coupling (PCC) in islanded microgrids when non-linear loads are present. A capacitive virtual impedance loop could be used to provide selective harmonic compensation in islanded microgrids, instead of in...

  1. Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs

    Tang, Z.; Wie, C. R.

    2010-03-01

    In this paper, the degradation of hydrogenated amorphous silicon thin film transistors under a self-heating stress (SHS) condition is investigated by analyzing the capacitance-voltage characteristics of gate-to-drain capacitance ( Cgd) and gate-to-source capacitance ( Cgs). The very different characteristics of Cgd- V g and Cgs- V g show different stress-induced density of states (DOS) property at the drain side and source side of channel. In a long channel device, the Cgd and Cgs characteristics could be explained by the deep states profile which corresponds to the non-uniform threshold voltage profile induced by the bias temperature stress only. The capacitance-voltage and current-voltage curves, simulated using the ATLAS 2D simulator based on the non-uniform defect states profile, agreed well with the measured data. In a short channel device, the simulation fitting of the Cgd and Cgs data required a non-uniform defect states profile, which is substantially modified from the long channel profile. This was interpreted in terms of a significant contribution of the non-uniform temperature distribution, caused by stress-induced self-heating effect in the short channel device, to the defect states density profile in the channel. A decreased density of conduction band tail states at the source end, corresponding to the increased deep Gaussian states, enabled a good simulation fit in the short channel device.

  2. Enhanced Buck–Boost Neutral-Point-Clamped Inverters With Simple Capacitive-Voltage Balancing

    Tan, Kuan Khoon; Gao, Feng; Loh, Poh Chiang;

    2010-01-01

    introduced for extending the inverters’ variation range to include voltageboost operation, but they generally require the inclusion of large passive components or have not yet been optimized in terms of waveform quality. The balancing of their capacitive voltages using a simple technique has also not yet...... been investigated in the context of buck–boost energy conversion, even though relevant techniques for traditional NPC inverters do exist but are generally overburdened by the accompanied switching loss increase and more complex control and hardware circuitries. To address these two topological concerns...... simultaneously, two new buck–boost NPC inverters with simple capacitive-voltage-balancing capability are proposed. Both inverters are demonstrated to exhibit a doubling of voltage gain, with one of them also shown to produce a better output waveform quality. Simulation and experimental results are provided for...

  3. Capacitance Voltage of P3HT:Graphene Nanocomposites Based Bulk-Heterojunction Organic Solar Cells

    Shakina Mohd Shariff, Nur; Mohamad Saad, Puteri Sarah; Rusop Mahmood, Mohamad

    2015-11-01

    After the discovery of conjugated polymer and bulk-heterojunction concept, organic solar cell has gain many interest in the photovoltaic world. The main problem for organic solar cells is that the power conversion efficiency (PCE) is still considered low even though it is much more low cost compared to inorganic solar cell such as Silicon (Si). Therefore, the objective of this research is to investigate the effect of Poly(3-hexylthiophene) (P3HT) thickness and concentration towards the capacitance voltage of the P3HT:Graphene solar cells. A simulation software called SCAPS is used in this research to simulate the effect on the solar cells. SCAPS is specialized for photovoltaic simulation studies. The solar cell's structure will be drawn inside the simulation and the parameters for each layers is inserted. The voltage range will be fixed and the capacitance voltage will be calculated by the software and all the results will be put into one graph. For thickness results, P3HT's layer at a thickness of 100nm has the lowest value of capacitance and clearly shows a peak at 0.86V. Where for the concentration, 1×1016 cm-3 is the only value that clearly shows there is the built-in voltage (Vbi) in the solar cells. Therefore, P3HT's thickness of 100 nm and concentration of 1×1016 cm-3 has the best overall results.

  4. What we talk about when we talk about capacitance measured with the voltage-clamp step method

    Taylor, Adam L.

    2011-01-01

    Capacitance is a fundamental neuronal property. One common way to measure capacitance is to deliver a small voltage-clamp step that is long enough for the clamp current to come to steady state, and then to divide the integrated transient charge by the voltage-clamp step size. In an isopotential neuron, this method is known to measure the total cell capacitance. However, in a cell that is not isopotential, this measures only a fraction of the total capacitance. This has generally been thought ...

  5. Tailored voltage waveform capacitively coupled plasmas in electronegative gases:frequency dependence of asymmetry effects

    Schüngel, E; Korolov, I.; Bruneau, Bastien; Derzsi, A.; Johnson, Erik V.; O'Connell, Deborah; Gans, Timo; Booth, Jean-Paul; Donko, Z.; Schulze, J.

    2016-01-01

    Capacitively coupled radio frequency plasmas operated in an electronegative gas (CF4) and driven by voltage waveforms composed of four consecutive harmonics are investigated for different fundamental driving frequencies using PIC/MCC simulations and an analytical model. As has been observed previously for electropositive gases, the application of peak-shaped waveforms (that are characterized by a strong amplitude asymmetry) results in the development of a DC self-bias due to the electrical as...

  6. Dopant profiling and surface analysis of silicon nanowires using capacitance-voltage measurements.

    Garnett, Erik C; Tseng, Yu-Chih; Khanal, Devesh R; Wu, Junqiao; Bokor, Jeffrey; Yang, Peidong

    2009-05-01

    Silicon nanowires are expected to have applications in transistors, sensors, resonators, solar cells and thermoelectric systems. Understanding the surface properties and dopant distribution will be critical for the fabrication of high-performance devices based on nanowires. At present, determination of the dopant concentration depends on a combination of experimental measurements of the mobility and threshold voltage in a nanowire field-effect transistor, a calculated value for the capacitance, and two assumptions--that the dopant distribution is uniform and that the surface (interface) charge density is known. These assumptions can be tested in planar devices with the capacitance-voltage technique. This technique has also been used to determine the mobility of nanowires, but it has not been used to measure surface properties and dopant distributions, despite their influence on the electronic properties of nanowires. Here, we measure the surface (interface) state density and the radial dopant profile of individual silicon nanowire field-effect transistors with the capacitance-voltage technique. PMID:19421217

  7. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    Poyai, A. E-mail: amporn@imec.be; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n{sup +}-p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 {mu}m CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly.

  8. Characterization of active CMOS sensors for capacitively coupled pixel detectors

    Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

    2015-07-01

    Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  9. Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

    Elogail, Y.; Kasper, E.; Gunzer, F.; Shaker, A.; Schulze, J.

    2016-06-01

    This work is concerned with the investigation of Capacitance-Voltage (CV) behavior of n-channel Si/SiGe MODFET varactors. This investigation provides a valuable insight into the high frequency response of the device under test and its dependence on design parameters; especially regarding the modulation layer doping concentration. The heterostructure under consideration is much more complicated than conventional MOS varactor with respect to non-uniform doping, energy band offsets and the pn-junction in series. Subsequently, CV characterization has never been applied to such MODFET varactor structure. Experimental CV measurements have shown a non-monotonic behavior with a transition point minimum and higher saturation levels on both sides, in contradiction to the conventional high frequency MOS characteristics. This behavior was confirmed qualitatively using simulations. Moreover, we explain some fundamental capacitance properties of the structure, which provide already very interesting perceptions of the MODFET varactor operation, modeling and possible applications using the obtained stimulating results.

  10. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.

    Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

    2009-08-19

    A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10(-18) F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the inversion layer capacitance (C(inv)) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C(inv) = 60 aF. PMID:19636094

  11. MOS capacitance-voltage characteristics and dielectric properties of ion implanted thermal oxides on silicon

    Structural damage created in thermal oxides on silicon as a result of exposure to energetic ion beams leads to a change of its dielectric and chemical properties. Adverse effects on the oxide-silicon interface in the form of creation of interface states are also to be expected. Ion implanted oxides in MOS structures are studied with the help of MOS capacitance- and conductance-voltage characteristics, reactions of these oxides in etchant solutions, and ellipsometry. Interesting pattern of recovery of these properties is seen when the ion implanted samples are annealed at increasing temperatures. (author)

  12. Use of negative capacitance to provide voltage amplification for low power nanoscale devices.

    Salahuddin, Sayeef; Datta, Supriyo

    2008-02-01

    It is well-known that conventional field effect transistors (FETs) require a change in the channel potential of at least 60 mV at 300 K to effect a change in the current by a factor of 10, and this minimum subthreshold slope S puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET-based switches. Here, we suggest that by replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation. The voltage transformer action can be understood intuitively as the result of an effective negative capacitance provided by the ferroelectric capacitor that arises from an internal positive feedback that in principle could be obtained from other microscopic mechanisms as well. Unlike other proposals to reduce S, this involves no change in the basic physics of the FET and thus does not affect its current drive or impose other restrictions. PMID:18052402

  13. Low voltage charge-balanced capacitance-voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor

    Manaf, Asrulnizam Bin Abd; Matsumoto, Yoshinori

    2009-01-01

    A low voltage detection circuit for a capacitance sensor is important for connection to a low voltage digital circuit interface. We studied two different charge-balanced capacitance-voltage ( C- V) conversion circuits configurations; the operational amplifier and the inverter amplifier. Both capacitance detection circuits were designed using 0.35 μm CMOS circuitry technology. Both amplifiers used in the detection circuits were not affected by offset voltage. The current consumption for capacitance detection circuit was reduced from 250 μA at V dd 3.3 V to 38 μA at V dd 1.3 V by switching from an operational amplifier to an inverter amplifier. These circuits were packaged with one-side-electrode-type fluid-based inclination sensors on ceramic substrates. The size of the sensor is ∅ 4.0 mm × 1.0 mm and pure propylene carbonate was used as electrolyte. Changes in temperature did not affect the output voltage of the sensor between -10 °C and 50 °C. This results show that the inverter amplifier used in the detection circuit was not affected by offset voltage and the output voltage V m is depends only on capacitor ratio. The capacitance detection circuit using the inverter amplifier shows a high-sensitivity of about 7 mV/deg over the operational amplifier at V dd 1.3 V. The response time, resolution and minimum moving angle of sensor were 0.7 s, 0.86° and 0.4°, respectively, at V dd 1.3 V for the inverter amplifier type of capacitance detection circuit.

  14. Customized ion flux-energy distribution functions in capacitively coupled plasmas by voltage waveform tailoring

    Schuengel, E; Hartmann, P; Derzsi, A; Korolov, I; Schulze, J

    2016-01-01

    We propose a method to generate a single peak at a distinct energy in the ion flux-energy distribution function (IDF) at the electrode surfaces in capacitively coupled plasmas. The technique is based on the tailoring of the driving voltage waveform, i.e. adjusting the phases and amplitudes of the applied harmonics, to optimize the accumulation of ions created by charge exchange collisions and their subsequent acceleration by the sheath electric field. The position of the peak (i.e. the ion energy) and the flux of the ions within the peak of the IDF can be controlled in a wide domain by tuning the parameters of the applied RF voltage waveform, allowing optimization of various applications where surface reactions are induced at particular ion energies.

  15. Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

    Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p+nn+ diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

  16. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  17. Enhanced charge efficiency and reduced energy use in capacitive deionization by increasing the discharge voltage.

    Kim, T; Dykstra, J E; Porada, S; van der Wal, A; Yoon, J; Biesheuvel, P M

    2015-05-15

    Capacitive deionization (CDI) is an electrochemical method for water desalination using porous carbon electrodes. A key parameter in CDI is the charge efficiency, Λ, which is the ratio of salt adsorption over charge in a CDI-cycle. Values for Λ in CDI are typically around 0.5-0.8, significantly less than the theoretical maximum of unity, due to the fact that not only counterions are adsorbed into the pores of the carbon electrodes, but at the same time coions are released. To enhance Λ, ion-exchange membranes (IEMs) can be implemented. With membranes, Λ can be close to unity because the membranes only allow passage for the counterions. Enhancing the value of Λ is advantageous as this implies a lower electrical current and (at a fixed charging voltage) a reduced energy use. We demonstrate how, without the need to include IEMs, the charge efficiency can be increased to values close to the theoretical maximum of unity, by increasing the cell voltage during discharge, with only a small loss of salt adsorption capacity per cycle. In separate constant-current CDI experiments, where after some time the effluent salt concentration reaches a stable value, this value is reached earlier with increased discharge voltage. We compare the experimental results with predictions of porous electrode theory which includes an equilibrium Donnan electrical double layer model for salt adsorption in carbon micropores. Our results highlight the potential of modified operational schemes in CDI to increase charge efficiency and reduce energy use of water desalination. PMID:25278271

  18. Nanoporous activated carbon cloth for capacitive deionization of aqueous solution

    Oh, Han-Jun [Department of Materials Science, Hanseo University, Seosan, 352-820 (Korea, Republic of); Lee, Jong-Ho [Department of Chemistry, Hanseo University, Seosan, 352-820 (Korea, Republic of); Ahn, Hong-Joo [Korea Atomic Energy Research Institute, Daejeon, 305-600 (Korea, Republic of); Jeong, Yongsoo [Korea Institute of Machinery and Materials, Changwon, 641-010 (Korea, Republic of); Kim, Young-Jig [Department of Metallurgical Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Chi, Choong-Soo [School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702 (Korea, Republic of)]. E-mail: cschi@kookmin.ac.kr

    2006-09-25

    Activated nanostructured-carbon cloths with a high ratio of surface area to volume are used as electrode for capacitive deionization. The electrochemical properties on capacitive deionization for NaCl solution have been investigated to improve efficiency of capacitive deionization properties from aqueous solution, employing chemical surface-modification by etching in alkaline and acidic solution. The removal efficiency of inorganic salts of activated carbon cloths by chemical modification significantly increased. Specially the carbon cloth surface modified in HNO{sub 3} showed an effect of improvement in the CDI efficiency due to not only ion adsorption by an electric double layer, but also electron transfer by Faradaic reaction.

  19. Enhanced Capacitive Characteristics of Activated Carbon by Secondary Activation

    YANG Hui; LU Tian-hong; Yoshio Masaki

    2004-01-01

    The effect of the improvement of commercial activated carbon(AC) on its specific capacitance and high rate capability of double layer(dl) charging/discharging process has been studied. The improvement of AC was carried out via a secondary activation under steam in the presence of catalyst NiCl2, and the suitable condition was found to be a heat treatment at about 875 ℃ for 1 h. Under those conditions, the discharge specific capacitance of the improved AC increases up to 53.67 F/g, showing an increase of about 25% as compared with that of as-received AC. The good rectangular-shaped voltammograms and A.C. impedance spectra prove that the high rate capability of the capacitor made of the improved AC is enhanced significantly. The capacitance resistance(RC) time constant of the capacitor containing the improved AC is 1.74 s, which is much lower than that of the one containing as-received AC(an RC value of 4. 73 s). It is noted that both kinds of AC samples show a similar specific surface area and pore size distribution, but some changes have taken place in the carbon surface groups, especially a decrease in the concentration of surface carbonyl groups after the improvement, which have been verified by means of X-photoelectron spectroscopy. Accordingly, it is suggested that the decrease in the concentration of surface carbonyl groups for the improved AC is beneficial to the organic electrolyte ion penetrating into the pores, thus leading to the increase in both the specific capacitance and high rate capability of the supercapacitor.

  20. Design of a High Voltage Bidirectional DC-DC Converter for Driving Capacitive Incremental Actuators usable in Electric Vehicles (EVs)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.;

    2014-01-01

    converter for efficiently charging and discharging the capacitive actuator from 0 V to 2.5 kV and vice versa, respectively. The converter is used to drive a dielectric electro active polymer (DEAP) based capacitive incremental actuator, which has the potential to be used in automotive (e.g., EVs), space and...

  1. Electron heating and control of ion properties in capacitive discharges driven by customized voltage waveforms

    We investigate the electron heating dynamics in capacitively coupled radio frequency plasmas driven by customized voltage waveforms and study the effects of modifying this waveform and the secondary electron emission coefficient of the electrodes on the spatio-temporal ionization dynamics by particle-in-cell simulations. We demonstrate that changes in the electron heating dynamics induced by voltage waveform tailoring strongly affect the dc self-bias, the ion flux, Γi, and the mean ion energy, 〈Ei〉, at the electrodes. The driving voltage waveform is customized by adding N consecutive harmonics (N ⩽ 4) of 13.56 MHz with specific harmonics' amplitudes and phases. The total voltage amplitude is kept constant, while modifying the number of harmonics and their phases. In an argon plasma, we find a dc self-bias, η, to be generated via the electrical asymmetry effect for N ⩾ 2. η can be controlled by adjusting the harmonics' phases and is enhanced by adding more consecutive harmonics. At a low pressure of 3 Pa, the discharge is operated in the α-mode and 〈Ei〉 can be controlled by adjusting the phases at constant Γi. The ion flux can be increased by adding more harmonics due to the enhanced electron-sheath heating. 〈Ei〉 does not remain constant as a function of N at both electrodes due to a change in η. These findings verify previous results of Lafleur et al. At a high pressure of 100 Pa and using a high secondary electron emission coefficient of γ = 0.4, the discharge is operated in the γ-mode and mode transitions are induced by changing the driving voltage waveform. Due to these mode transitions and the specific ionization dynamics in the γ-mode, Γi is no longer constant as a function of the harmonics' phases and decreases with increasing N. (paper)

  2. Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

    Cho, Minkyu; Seo, Jung-Hun; Park, Dong-Wook; Zhou, Weidong; Ma, Zhenqiang

    2016-06-01

    Metal-oxide-semiconductor (MOS) device is the basic building block for field effect transistors (FET). The majority of thin-film transistors (TFTs) are FETs. When MOSFET are mechanically bent, the MOS structure will be inevitably subject to mechanical strain. In this paper, flexible MOS devices using single crystalline Silicon (Si) and Germanium (Ge) nanomembranes (NM) with SiO2, SiO, and Al2O3 dielectric layers are fabricated on a plastic substrate. The relationships between semiconductor nanomembranes and various oxide materials are carefully investigated under tensile/compressive strain. The flatband voltage, threshold voltage, and effective charge density in various MOS combinations revealed that Si NM-SiO2 configuration shows the best interface charge behavior, while Ge NM-Al2O3 shows the worst. This investigation of flexible MOS devices can help us understand the impact of charges in the active region of the flexible TFTs and capacitance changes under the tensile/compressive strains on the change in electrical characteristics in flexible NM based TFTs.

  3. Trap profiling at nanocavity bands in silicon wafers by means of capacitance-voltage measurements

    Auriac, N

    2002-01-01

    Nanocavities are formed by He sup + -and H sup + -ion implantation in silicon single crystals, at the projected range R sub p , after post-implantation annealing. The present paper deals with the characterization of deep trap levels associated with such defects. P-type silicon single crystals were implanted using He sup + -and H sup + -ion beams, at an energy of 250 keV and to a dose of 3 x 10 sup 1 sup 6 cm sup - sup 2. Capacitance-voltage (C-V) profiling and deep-level transient spectroscopy (DLTS) techniques were used to determine the density profile and the energy levels of deep traps in the gap. In implanted and post-annealed samples a quasi-triangular profile of the space charge is revealed around R sub p by C-V profiling, and the space charge density reaches 10 sup 1 sup 6 cm sup - sup 3. DLTS suggests that trap levels are located at 0.4 eV above the valence band, with a maximum density around 10 sup 1 sup 5 cm sup - sup 3 at R sub p. The sign and distribution of the space charge for depletion in He su...

  4. Laterally Inhomogeneous Barrier Analysis Using Capacitance-Voltage Characteristics of Identically Fabricated Schottky Diodes

    Çavdar, Şükrü; Tuğluoğlu, Nihat; Akgül, Kübra Bengin; Koralay, Haluk

    2016-08-01

    Au Schottky contacts (50 dots) on n-Si (100) were fabricated by thermal evaporation under the same conditions. The mean of the electrical parameters of the diodes were investigated by means of capacitance-voltage ( C- V) measurements at 1 MHz. Even if the diodes were all equally fabricated, there was a diode-to-diode change. The values of barrier height (ΦB) were determined from the C -2- V characteristics, which ranged from 0.812 eV to 0.837 eV. The Gaussian fit of the barrier height distributions gave a mean of barrier height value of 0.822 eV and a standard value of 0.005 eV. Furthermore, the mean values of other parameters such as the carrier donor concentration ( N D), the diffusion potential at zero bias ( V 0), the Fermi level ( E F), the image force lowering (ΔΦb) and the space charge layer width ( W D) were investigated and determined to be 1.311 × 1015 cm-3, 0.575 V, 0.257 eV, 1.363 × 10-2 eV, and 7.573 × 10-5 cm, respectively.

  5. Capacitively coupled hydrogen plasmas sustained by tailored voltage waveforms: excitation dynamics and ion flux asymmetry

    Bruneau, B.; Diomede, P.; Economou, D. J.; Longo, S.; Gans, T.; O’Connell, D.; Greb, A.; Johnson, E.; Booth, J.-P.

    2016-08-01

    Parallel plate capacitively coupled plasmas in hydrogen at relatively high pressure (~1 Torr) are excited with tailored voltage waveforms containing up to five frequencies. Predictions of a hybrid model combining a particle-in-cell simulation with Monte Carlo collisions and a fluid model are compared to phase resolved optical emission spectroscopy measurements, yielding information on the dynamics of the excitation rate in these discharges. When the discharge is excited with amplitude asymmetric waveforms, the discharge becomes electrically asymmetric, with different ion energies at each of the two electrodes. Unexpectedly, large differences in the \\text{H}2+ fluxes to each of the two electrodes are caused by the different \\text{H}3+ energies. When the discharge is excited with slope asymmetric waveforms, only weak electrical asymmetry of the discharge is observed. In this case, electron power absorption due to fast sheath expansion at one electrode is balanced by electron power absorption at the opposite electrode due to a strong electric field reversal.

  6. The electrochemical capacitance-voltage characterization of InP based p-i-n structures

    Wang, Li-wei; Lu, Yi-dan; Xu, Jin-tong; Li, Xiang-yang

    2013-09-01

    Electrochemical Capacitance-Voltage (EC-V) profiling is currently one of the most often used methods for majority carrier concentration depth profiling of semiconductors. The experiments of EC-V profiling on InP based structures were conducted by Wafer Profiler CVP21, and there are two problems in the experiments of InP based p-i-n structures : a)the experimental results of EC-V profiling of i layer were not in line with the theoretically data after the EC-V profiling of p layer, which can be measured within the error range; b) The measurements of etching depth were not very accurate. In this paper, we made comparative experiments on InP based n-i-n structures, and find out a method to deal with the first problem: firstly etch p layer before EC-V profiling, so we can gain a relatively accurate result of EC-V profiling of i layer. Besides, use back contacts instead of front contacts to do the EC-V profiling according to the instruction book of the Wafer Profiler CVP21. Then the author tried to infer the reason that results in the first problem theoretically. Meanwhile we can calibrate the etching depth through Profile-system and Scanning Probe Microscope (SPM). And there are two possible reasons which result in the second problem: the defects of the semiconductors and the electrolyte we used to etch the semiconductors.

  7. Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

    2002-01-01

    Depth profiles of carrier concentrations in Ga- MnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

  8. Isolating the effect of pore size distribution on electrochemical double-layer capacitance using activated fluid coke

    Zuliani, Jocelyn E.; Tong, Shitang; Kirk, Donald W.; Jia, Charles Q.

    2015-12-01

    Electrochemical double-layer capacitors (EDLCs) use physical ion adsorption in the capacitive electrical double layer of high specific surface area (SSA) materials to store electrical energy. Previous work shows that the SSA-normalized capacitance increases when pore diameters are less than 1 nm. However, there still remains uncertainty about the charge storage mechanism since the enhanced SSA-normalized capacitance is not observed in all microporous materials. In previous studies, the total specific surface area and the chemical composition of the electrode materials were not controlled. The current work is the first reported study that systematically compares the performance of activated carbon prepared from the same raw material, with similar chemical composition and specific surface area, but different pore size distributions. Preparing samples with similar SSAs, but different pores sizes is not straightforward since increasing pore diameters results in decreasing the SSA. This study observes that the microporous activated carbon has a higher SSA-normalized capacitance, 14.1 μF cm-2, compared to the mesoporous material, 12.4 μF cm-2. However, this enhanced SSA-normalized capacitance is only observed above a threshold operating voltage. Therefore, it can be concluded that a minimum applied voltage is required to induce ion adsorption in these sub-nanometer micropores, which increases the capacitance.

  9. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  10. Efficiency of Capacitively Loaded Converters

    Andersen, Thomas; Huang, Lina; Andersen, Michael A. E.;

    2012-01-01

    introduced as a definition of efficiency. The calculated and measured efficiency curves for charging DEAP actuator, polypropylene film capacitor and X7R MLCC are provided and compared. The attention has to be paid for the voltage dependent capacitive load, like X7R MLCC, when evaluating the charging......This paper explores the characteristic of capacitance versus voltage for dielectric electro active polymer (DEAP) actuator, 2kV polypropylene film capacitor as well as 3kV X7R multi layer ceramic capacitor (MLCC) at the beginning. An energy efficiency for capacitively loaded converters is...... polypropylene film capacitor can be the equivalent capacitive load. Because of the voltage dependent characteristic, X7R MLCC cannot be used to replace the DEAP actuator. However, this type of capacitor can be used to substitute the capacitive actuator with voltage dependent property at the development phase....

  11. Tailored voltage waveform capacitively coupled plasmas in electronegative gases: frequency dependence of asymmetry effects

    Schüngel, E.; Korolov, I.; Bruneau, B.; Derzsi, A.; Johnson, E.; O’Connell, D.; Gans, T.; Booth, J.-P.; Donkó, Z.; Schulze, J.

    2016-07-01

    Capacitively coupled radio frequency plasmas operated in an electronegative gas (CF4) and driven by voltage waveforms composed of four consecutive harmonics are investigated for different fundamental driving frequencies using PIC/MCC simulations and an analytical model. As has been observed previously for electropositive gases, the application of peak-shaped waveforms (that are characterized by a strong amplitude asymmetry) results in the development of a DC self-bias due to the electrical asymmetry effect (EAE), which increases the energy of ions arriving at the powered electrode. In contrast to the electropositive case (Korolov et al 2012 J. Phys. D: Appl. Phys. 45 465202) the absolute value of the DC self-bias is found to increase as the fundamental frequency is reduced in this electronegative discharge, providing an increased range over which the DC self-bias can be controlled. The analytical model reveals that this increased DC self-bias is caused by changes in the spatial profile and the mean value of the net charge density in the grounded electrode sheath. The spatio-temporally resolved simulation data show that as the frequency is reduced the grounded electrode sheath region becomes electronegative. The presence of negative ions in this sheath leads to very different dynamics of the power absorption of electrons, which in turn enhances the local electronegativity and plasma density via ionization and attachment processes. The ion flux to the grounded electrode (where the ion energy is lowest) can be up to twice that to the powered electrode. At the same time, while the mean ion energies at both electrodes are quite different, their ratio remains approximately constant for all base frequencies studied here.

  12. 特高压电容式电压互感器介损和电容测量方法分析%Testing analysis of dielectric loss and capacitance of ultra-high voltage capacitive voltage transformer

    苏陈云; 黄震

    2012-01-01

    电容式电压互感器(CVT)的电容量和介质损耗角的测量是检验设备绝缘性能的一项重要试验,特高压1 000kV CVT因其具有自身独有的特性,其试验方法也具有特殊性.比较系统地介绍了特高压变电站中2种不同结构的500 kV CVT电容量和介损的测量方法.主要针对1 000kV电容式电压互感器结构特殊性采用了一种新的试验方法,通过现场试验,测试结果符合特高压交流试验示范工程电气设备交接试验标准要求,证明采用外高压、内标准、正接法测量CVT中压臂电容C2是可行的.%The measuring of dielectric loss and capacitance of capacitive voltage transformer is important for equipment insulation level. The test on ultra-high voltage 1 000 kV capacitive voltage transformer is different than other transformers. The method to measure two different structural 500 kV CVT is systematically introduced. Furthermore, a new test method of 1 000 kV CVT is proposed according to particular feature of 1 000 kV CVT. The method use external standard capacitor, internal high voltage and positive connection to measure C2 capacitor of CVT. The test results meet standards of UHV AC pilot project hand-over regulations according to the on-site test, which proves the validity of proposed method.

  13. On the scaling of rf and dc self-bias voltages with pressure in electronegative capacitively coupled plasmas

    Higher gas densities and lower diffusion losses at higher operating pressures typically lead to increased charged species densities (and hence flux) for a constant power deposition in capacitively coupled plasmas (CCP). As a result, one would expect that the bias radio-frequency (rf) voltage required to deposit a given power in a CCP reactor decreases with increasing operating pressure. These observations may not hold true in multiple frequency CCPs, commonly used for dielectric etching in microelectronics fabrication, due to nonlinear interactions between the rf sources. Wafer-based measurements of the rf and self-generated direct current (dc) bias voltages in a dual-frequency capacitively coupled electronegative plasma were made, which indicate that the rf and dc voltages vary nonmonotonically with pressure. These experimental results are presented in this paper and a computational plasma model is used to explain the experimental observations for varying 60 MHz and 13 MHz powers in the Ar/CF4/CHF3 plasma over a pressure range of 25 to 400 mTorr. The authors found that while the ion density increases with pressure, the increase is most dominant near the electrode with the high frequency source (60 MHz). The rf and dc bias voltages are ultimately influenced by both charged species density magnitudes and spatial profiles.

  14. Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

    Feng, Guang [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Li, Song [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Atchison, Jennifer S. [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Presser, Volker [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Cummings, Peter T. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

    2013-04-12

    Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreement with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.

  15. MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance-Voltage(C V)curves of Metal OxideSemiconductor Capacitors(MOSC),including electron and hole trapping at the dopant donor and acceptor impurities,are presented to illustrate giant trapping capacitances,from > 0.01Cox to > 10Cox.Five device and materials parameters are varied for fundamental trapping parameter characterization,and electrical and optical signal processing applications.Parameters include spatially constant concentration of the dopant-donor-impurity electron trap,NDD,the ground state electron trapping energy level depth measured from the conduction band edge,EC-ED,the degeneracy of the trapped electron at the ground state,gD,the device temperature,T,and the gate oxide thickness,xox.

  16. Characterization of electrical and mechanical activities of rabbit uterus associated with the presence of capacitated and non-capacitated spermatozoa

    J.F. Lazcano-Reyes; Montiel, J.L.; Medrano, A.

    2013-01-01

    To investigate the effects capacitated spermatozoa may exert upon motility of the rabbit uterus, both contractility and electrical activity (frequency and intensity) were measured in 3 distinctive uterine segments of anaesthetized does: horn (UH), uterotubal junction (UTJ) and tube (UT) after 1) natural mating, 2) infusion of either seminal plasma or PBS, 3) infusion of either capacitated or non-capacitated spermatozoa. Basal values were: 17.1, 15.7, 16.4 g (contractility, P>0.05); 3.5, 3.5, ...

  17. Superior capacitive performance of active carbons derived from Enteromorpha prolifera

    Highlights: • An ocean biomass, Entromorphra prolifera, has been processed into supercapacitor electrodes. • KOH activation can prepare hierarchical porous carbon. • The as-prepared carbons have high capacitance with good rate capability. • This work provided an approach to value-added products from an ocean biomass. - Abstract: Enteromorpha prolifera (E.prolifera), an ocean biomass, was used as raw materials to prepare active carbons by a two-step strategy (pre-carbonization followed by chemical activation). The as-prepared active carbons have been characterized by a variety of means such as N2 adsorption, field emission scanning electron microscope, transmission electron microscope, Raman spectroscopy. The results showed that the carbons have large surface area and developed porosity with micro-meso hierarchical pore texture. As evidenced by electrochemical measurements, the specific capacitance of the carbons can reach up to 296 F g−1. More importantly, the carbons can maintain a high capacitance of up to 152 F g−1 at a very high current density of 30 A g−1, highlighting the promise of the carbons for high power applications

  18. Capacitance-voltage spectroscopy of self-organized InAs/GaAs quantum dots embedded in a pn diode

    Wetzler, R.; Wacker, A.; Schoell, E. [Technische Univ. Berlin (Germany). Inst. fuer Theoretische Physik; Kapteyn, C.M.A.; Heitz, R.; Bimberg, D. [Technische Univ. Berlin (Germany). Inst. fuer Festkoerperphysik

    2001-03-01

    We investigate the energy levels and their inhomogeneous broadening of self-organized quantum dots (QDs) embedded in a pn diode by means of capacitance-voltage (C-V) profiling. Our simulations of the C-V characteristics are based on the self-consistent solution of the Poisson equation and the drift-diffusion equations. Good quantitative agreement between predictions of the model and the low-frequency C-V characteristics is obtained for different temperatures. The comparison with experimental C-V data allows us to determine the energy levels of single QD states and their broadening. (orig.)

  19. New ways of measuring the pull-in voltage and transient behavior of parallel-plate capacitive MEMS transducers

    In this paper we introduce two new ways of measuring the pull-in voltage and the transient behavior of parallel-plate capacitive microelectromechanical systems (MEMS) transducers. The advantages in the measurement speed and resolution of the so-called fast MEMS test will be discussed. Also an enhanced method, the time-resolved dynamic measurement, will be shown. With the second method, we can visualize the integral displacement of a membrane while measuring the voltage drop of a high-frequency signal over a shunt resistor/capacitor. With a more advanced charge amplifier circuit, also a force-free resonance measurement of the membrane and electrode is possible in one step. All this offers a robust and cheap option for tracing moving structures without the need of an optical line of sight. (paper)

  20. The influence of the relative phase between the driving voltages on electron heating in asymmetric dual frequency capacitive discharges

    The influence of the relative phase between the driving voltages on electron heating in asymmetric phase-locked dual frequency capacitively coupled radio frequency plasmas operated at 2 and 14 MHz is investigated. The basis of the analysis is a nonlinear global model with the option to implement a relative phase between the two driving voltages. In recent publications it has been reported that nonlinear electron resonance heating can drastically enhance the power dissipation to electrons at moments of sheath collapse due to the self-excitation of nonlinear plasma series resonance (PSR) oscillations of the radio frequency current. This work shows that depending on the relative phase of the driving voltages, the total number and exact moments of sheath collapse can be influenced. In the case of two consecutive sheath collapses a substantial increase in dissipated power compared with the known increase due to a single PSR excitation event per period is observed. Phase resolved optical emission spectroscopy (PROES) provides access to the excitation dynamics in front of the driven electrode. Via PROES the propagation of beam-like energetic electrons immediately after the sheath collapse is observed. In this work we demonstrate that there is a close relation between moments of sheath collapse, and thus excitation of the PSR, and beam-like electron propagation. A comparison of simulation results to experiments in a single and dual frequency discharge shows good agreement. In particular the observed influence of the relative phase on the dynamics of a dual frequency discharge is described by means of the presented model. Additionally, the analysis demonstrates that the observed gain in dissipation is not accompanied by an increase in the electrode's dc-bias voltage which directly addresses the issue of separate control of ion flux and ion energy in dual frequency capacitively coupled radio frequency plasmas.

  1. Simulation of cold plasma in a chamber under high- and low-frequency voltage conditions for a capacitively coupled plasma

    Hao Daoxin; Cheng Jia; Ji Linhong; Sun Yuchun

    2012-01-01

    The characteristics of cold plasma,especially for a dual-frequency capacitively coupled plasma (CCP),play an important role for plasma enhanced chemical vapor deposition,which stimulates further studies using different methods.In this paper,a 2D fluid model was constructed for N2 gas plasma simulations with CFD-ACE+,a commercial multi-physical software package.First,the distributions of electric potential (Epot),electron number density (Ne),N number density (N) and electron temperature (Te) are described under the condition of high frequency (HF),13.56 MHz,HF voltage,300 V,and low-frequency (LF) voltage,0 V,particularly in the sheath.Based on this,the influence of HF on Ne is further discussed under different HF voltages of 200 V,300 V,400 V,separately,along with the influence of LF,0.3 MHz,and various LF voltages of 500 V,600 V,700 V.The results show that sheaths of about 3 mm are formed near the two electrodes,in which Epot and Te vary extensively with time and space,while in the plasma bulk Epot changes synchronously with an electric potential of about 70 V and Te varies only in a small range.N is also modulated by the radio frequency,but the relative change in N is small.Ne varies only in the sheath,while in the bulk it is steady at different time steps.So,by comparing Ne in the plasma bulk at the steady state,we can see that Ne will increase when HF voltage increases.Yet,Ne will slightly decrease with the increase of LF voltage.At the same time,the homogeneity will change in both x and y directions.So both HF and LF voltages should be carefully considered in order to obtain a high-density,homogeneous plasma.

  2. Asymmetric Electrodes Constructed with PAN-Based Activated Carbon Fiber in Capacitive Deionization

    Mingzhe Li

    2014-01-01

    Full Text Available Capacitive deionization (CDI method has drawn much attention for its low energy consumption, low pollution, and convenient manipulation. Activated carbon fibers (ACFs possess high adsorption ability and can be used as CDI electrode material. Herein, two kinds of PAN-based ACFs with different specific surface area (SSA were used for the CDI electrodes. The CDI performance was investigated; especially asymmetric electrodes’ effect was evaluated. The results demonstrated that PAN-based ACFs showed a high electrosorption rate (complete electrosorption in less than half an hour and moderate electrosorption capacity (up to 0.2 mmol/g. CDI experiments with asymmetric electrodes displayed a variation in electrosorption capacity between forward voltage and reverse voltage. It can be attributed to the electrical double layer (EDL overlap effect and inner pore potential; thus the ions with smaller hydrated ionic radius can be adsorbed more easily.

  3. Coordinated Voltage Control of Active Distribution Network

    Xie Jiang

    2016-01-01

    Full Text Available This paper presents a centralized coordinated voltage control method for active distribution network to solve off-limit problem of voltage after incorporation of distributed generation (DG. The proposed method consists of two parts, it coordinated primal-dual interior point method-based voltage regulation schemes of DG reactive powers and capacitors with centralized on-load tap changer (OLTC controlling method which utilizes system’s maximum and minimum voltages, to improve the qualified rate of voltage and reduce the operation numbers of OLTC. The proposed coordination has considered the cost of capacitors. The method is tested using a radial edited IEEE-33 nodes distribution network which is modelled using MATLAB.

  4. DEVELOPMENT OF NEW CHARTS OF CAPACITANCE-RESISTANCE DEFENSE OF HIGH-VOLTAGE CAPACITORS OF POWERFUL CAPACITY STORES OF ENERGY FROM EMERGENCY CURRENTS

    M.I. Baranov

    2015-12-01

    Full Text Available Purpose. Development of new charts of capacitance-resistance defense of high-voltage capacitors of powerful capacity stores of energy (CSE from emergency large impulsive currents (LIC at the electric hasp of one of condensers of such CSE on the stage of their charge or discharge. Methodology. Electrophysics bases of the technique of high-voltage and large pulsed currents, and also scientific and technical bases of planning of devices of high-voltage impulse technique. Results. Two new charts of capacitance-resistance defense of high-voltage impulsive capacitors are offered for powerful CSE of one- and multimodule execution from emergency LIC, being based on the use of high-voltage permanent graphite-ceramic resistors of type of TVO-60 a face value from 24 to 100 Ohm, set on the high-voltage conclusions of all of condensers of CSE. One of the developed capacitance-resistance charts of defense of condensers for powerful one-module CSE passed practical approbation. Originality. It is shown that application of the developed charts of capacitance-resistance defense of high-voltage condensers of powerful CSE is provided by frequent limitation of amplitude of emergency LIC, flowing through broken through an electric discharge condenser of CSE on the stage of his charge or discharge. Such limitation emergency LIC is prevented by explosion destruction of the damaged condenser of high-voltage CSE. Practical value. The use of the developed charts of capacitance-resistance defense of high-voltage capacitors from emergency LIC allows substantially to promote functional safety of powerful CSE of one- and multi-module execution and provide the safe terms of labour for a scientific and technical personnel, attendant similar CSE.

  5. Cooperative Control with Virtual Selective Harmonic Capacitance for Harmonic Voltage Compensation in Islanded MicroGrids

    Micallef, A.; Apap, M.; Spitero-Stanies, C.;

    2012-01-01

    This paper focuses on the islanded operation of microgrids. In this mode of operation, the microsources are required to cooperate autonomously to regulate the local grid voltage and frequency. Droop control is typically used to achieve this autonomous voltage and frequency regulation. Inverters h...

  6. Experimental investigations of electron heating dynamics and ion energy distributions in capacitive discharges driven by customized voltage waveforms

    Berger, Birk [Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Institute for Theoretical Electrical Engineering, Ruhr University Bochum, D-44780 Bochum (Germany); Brandt, Steven; Franek, James; Schüngel, Edmund; Koepke, Mark; Schulze, Julian [Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Mussenbrock, Thomas [Institute for Theoretical Electrical Engineering, Ruhr University Bochum, D-44780 Bochum (Germany)

    2015-12-14

    Capacitively coupled radio frequency plasmas driven by customized voltage waveforms provide enhanced opportunities to control process-relevant energy distributions of different particle species. Here, we present an experimental investigation of the spatio-temporal electron heating dynamics probed by Phase-Resolved Optical Emission Spectroscopy (PROES) in an argon discharge driven by up to three consecutive harmonics of 13.56 MHz with individually adjustable harmonics' amplitudes and phases. PROES and voltage measurements are performed at fixed total voltage amplitudes as a function of the number of driving harmonics, their relative phases, and pressure to study the effects of changing the applied voltage waveform on the heating dynamics in collisionless and collisional regimes. Additionally, the ion energy distribution function (IEDF) is measured at low pressure. In this collisionless regime, the discharge is operated in the α-mode. The velocity of energetic electron beams generated by the expanding sheaths is found to be affected by the number of driving harmonics and their relative phases. This is understood based on the sheath dynamics obtained from a model that determines sheath voltage waveforms. The formation of the measured IEDFs is understood and found to be directly affected by the observed changes in the electron heating dynamics. It is demonstrated that the mean ion energy can be controlled by adjusting the harmonics' phases. In the collisional regime at higher pressures changing the number of harmonics and their phases at fixed voltage is found to induce heating mode transitions from the α- to the γ-mode. Finally, a method to use PROES as a non-invasive diagnostic to monitor and detect changes of the ion flux to the electrodes is developed.

  7. Experimental investigations of electron heating dynamics and ion energy distributions in capacitive discharges driven by customized voltage waveforms

    Capacitively coupled radio frequency plasmas driven by customized voltage waveforms provide enhanced opportunities to control process-relevant energy distributions of different particle species. Here, we present an experimental investigation of the spatio-temporal electron heating dynamics probed by Phase-Resolved Optical Emission Spectroscopy (PROES) in an argon discharge driven by up to three consecutive harmonics of 13.56 MHz with individually adjustable harmonics' amplitudes and phases. PROES and voltage measurements are performed at fixed total voltage amplitudes as a function of the number of driving harmonics, their relative phases, and pressure to study the effects of changing the applied voltage waveform on the heating dynamics in collisionless and collisional regimes. Additionally, the ion energy distribution function (IEDF) is measured at low pressure. In this collisionless regime, the discharge is operated in the α-mode. The velocity of energetic electron beams generated by the expanding sheaths is found to be affected by the number of driving harmonics and their relative phases. This is understood based on the sheath dynamics obtained from a model that determines sheath voltage waveforms. The formation of the measured IEDFs is understood and found to be directly affected by the observed changes in the electron heating dynamics. It is demonstrated that the mean ion energy can be controlled by adjusting the harmonics' phases. In the collisional regime at higher pressures changing the number of harmonics and their phases at fixed voltage is found to induce heating mode transitions from the α- to the γ-mode. Finally, a method to use PROES as a non-invasive diagnostic to monitor and detect changes of the ion flux to the electrodes is developed

  8. 电容分压型电子电压互感器的特性研究%Characteristics of electronic voltage transformers based on capacitive voltage divider

    杨玲君; 周冬旭; 徐志超

    2012-01-01

    The transfer function model of EVT(Electronic Voltage Transformer based on capacitive voltage divider) is analyzed and deduced. Its frequency characteristics and the transient characteristics of its trapped charge are analyzed. The transient mathematical model of trapped charge is deduced and the parameters which have influences on frequency characteristics and transient characteristics are analyzed mathematically. Simulative results show that,the capacitors of voltage divider and the parameters of integrator have great effects on the frequency characteristics and transient characteristics of EVT. Reducing the integral capacitor or integral feedback resistor may reduce its bandwidth. Reducing the sampling resistor or high-voltage capacitor may increase its bandwidth. Reducing the low-voltage capacitor or sampling resistor may shorten the transient process caused by the trapped charge and then reduce the transient error.%分析和建立电容分压型电子电压互感器(EVT)的传递函数模型,重点分析了EVT的频率特性和滞留电荷的暂态特性,建立了滞留电荷暂态数学模型,对影响频率特性和暂态特性的参数进行了数学分析.仿真分析表明EVT的频率特性和暂态响应过程与高、低压电容和积分器参数有关.可知:减小积分电容或减小积分反馈电阻时可减小频带宽度;减小采样电阻或高压臂电容可增加频带宽度;减小低压电容或采样电阻可缩短滞留电荷造成的暂态过程,减小暂态误差.

  9. Analytical Charge Voltage Model in MOS Inversion Layer Based on Space Charge Capacitance

    2000-01-01

    The concept of Space Charge Capacitance (SCC) is proposed and used to make a novel analytical charge model of quantized inversion layer in MOS structures. Based on SCC,continuous expressions of surface potential and inversion layer carrier density are derived.Quantum mechanical effects on both inversion layer carrier density and surface potential are extensively included. The accuracy of the model is verified by the numerical solution to Schrodinger and Poisson equation and the model is demonstrated,too.

  10. Gate-to-drain capacitance verifying the continuous-wave green laser crystallization n-TFT trapped charges distribution under dc voltage stress

    Hsieh, Zhen-Ying; Wang, Mu-Chun; Chen, Shuang-Yuan; Chen, Chih; Huang, Heng-Sheng

    2009-12-01

    In this work, a metrology was proposed to realize the distribution of fixed oxide trapped charges and grain boundary trapped states. The (continuous-wave green laser crystallization) n-channel thin-film transistors (TFTs) were forced by dc voltage stress, VG=VD. The gate-to-drain capacitance, CGD-VG, with varying frequency of applied small signal was developed. To probe the distribution of these defects, the difference (initial capacitance values minus stressed capacitance values) of CGD-VG with different frequencies was precisely studied.

  11. Digital Control of a High Voltage (2.5 kV) Bidirectional Flyback DC-DC Converter for Driving a Capacitive Incremental Actuator

    Thummala, Prasanth; Maksimovic, Dragan; Zhang, Zhe;

    2016-01-01

    (0-2.5 kV) bidirectional dc-dc flyback converter for driving a capacitive incremental actuator. The incremental actuator consists of three electrically isolated, mechanically connected capacitive actuators. It requires three high voltage (2-2.5 kV) bidirectional dc-dc converters, to accomplish the...... incremental motion by charging and discharging the capacitive actuators. The bidirectional flyback converter employs a digital controller to improve efficiency and charge/discharge speed using the valley switching technique during both charge and discharge processes, without the need to sense signals on the...... output high-voltage (HV) side. Experimental results verifying the bidirectional operation of a high voltage flyback converter are presented, using a 3 kV polypropylene film capacitor as the load. The energy loss distributions of the converter when 4 kV and 4.5 kV HV MOSFETs are used on HV side are...

  12. Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p- n junction with a porous silicon antireflection coating

    Tregulov, V. V.

    2014-09-01

    Experimental results on the high-frequency capacitance-voltage characteristic of a photoelectric solar energy converter based on the n +- p junction with a thin porous silicon film on the frontal surface are considered. It is shown that the capacitance-voltage characteristic is determined by the surface metal-insulator-semiconductor (MIS) structure formed as a result of growing of a porous silicon layer by electrochemical anode etching. The effective thickness of the insulator layer of the MIS structure, the impurity concentration in its semiconductor region, and the density of surface states are determined.

  13. Activated carbon nanofiber webs made by electrospinning for capacitive deionization

    Activated carbon fiber (ACF) webs with a non-woven multi-scale texture were fabricated from polyacrylonitrile (PAN), and their electrosorption performance in capacitive deionization for desalination was investigated. PAN nanofibers were prepared by electrospinning, followed by oxidative stabilization and activation with carbon dioxide at 750–900 °C, resulting in the ACF webs that were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and nitrogen adsorption. The results show that the as-made ACFs have a specific surface area of 335–712 m2/g and an average nanofiber diameter of 285–800 nm, which can be tuned by varying the activation temperature. With the ACF webs as an electrode, an electrosorption capacity as high as 4.64 mg/g was achieved on a batch-type electrosorptive setup operated at 1.6 V. The ACF webs made by electrospinning are of potential as an excellent electrode material for capacitive deionization for desalination.

  14. Layout Capacitive Coupling and Structure Impacts on Integrated High Voltage Power MOSFETs

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    -to-layer coupling and the comparison of the layout impacts have not been well established. This paper presents modeling of parasitic mutual coupling to analyze the parasitic capacitance directly coupled between two on-chip metal wires. The accurate 3D field solver analysis for the comparable dimensions shows that...... the layer-to-layer coupling can contribute higher impacts than the well-known side-by-side coupling. Four layout structures are then proposed and implemented in a 0.18 µm partial SOI process for 100 V integrated power MOSFETs with a die area 2.31 mm2. The post-layout comparison using an industrial 2D...

  15. Investigation of fluoride removal from low-salinity groundwater by single-pass constant-voltage capacitive deionization.

    Tang, Wangwang; Kovalsky, Peter; Cao, Baichuan; Waite, T David

    2016-08-01

    Capacitive deionization (CDI) is attracting increasing attention as an emerging technology for the facile removal of ionic species from water. In this work, the feasibility of fluoride removal from low-salinity groundwaters by single-pass constant-voltage CDI was investigated and a model developed to describe the dynamic fluoride electrosorption behavior. Effects of operating parameters including charging voltage and pump flow rate as well as impact of fluoride and chloride feed concentrations on the effluent fluoride concentration and equilibrium fluoride adsorption capacity were studied and the obtained data used to validate the model. Using the validated model, the effects of various design parameters, including arrangement of multiple CDI cells, on fluoride removal were assessed. Single-pass constant-voltage CDI was found to be effective in removing fluoride from low-salinity groundwaters but, as expected, removal efficiency was compromised in waters of high salinity. The relatively simple electrosorption model developed here provided a satisfactory description of both fluoride removal and current evolution and would appear to be a useful tool for prediction of CDI performance over a range of operating conditions, cell arrangements and feed water compositions though scope for model improvement exists. PMID:27151285

  16. Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

    On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage

  17. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    Wondmagegn, Wudyalew T.

    2011-04-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.

  18. Enhanced capacitive properties of commercial activated carbon by re-activation in molten carbonates

    Lu, Beihu; Xiao, Zuoan; Zhu, Hua; Xiao, Wei; Wu, Wenlong; Wang, Dihua

    2015-12-01

    Simple, affordable and green methods to improve capacitive properties of commercial activated carbon (AC) are intriguing since ACs possess a predominant role in the commercial supercapacitor market. Herein, we report a green reactivation of commercial ACs by soaking ACs in molten Na2CO3-K2CO3 (equal in mass ratios) at 850 °C combining the merits of both physical and chemical activation strategies. The mechanism of molten carbonate treatment and structure-capacitive activity correlations of the ACs are rationalized. Characterizations show that the molten carbonate treatment increases the electrical conductivity of AC without compromising its porosity and wettability of electrolytes. Electrochemical tests show the treated AC exhibited higher specific capacitance, enhanced high-rate capability and excellent cycle performance, promising its practical application in supercapacitors. The present study confirms that the molten carbonate reactivation is a green and effective method to enhance capacitive properties of ACs.

  19. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures

    The capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 106 V/cm, 7.5, and 3 × 1012 cm−2, respectively

  20. Temperature-Dependent Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

    Munikrishana Reddy, Y.; Nagaraj, M. K.; Siva Pratap Reddy, M.; Lee, Jung-Hee; Rajagopal Reddy, V.

    2013-04-01

    The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Ni/Cu/n-InP Schottky barrier diodes are studied over a wide temperature range, from 210 K to 420 K. The I-V characteristics display anomalous thermal behavior. The apparent barrier height decays, and the ideality factor grows at low temperatures, and the series resistances resulting from Cheung's and Norde's procedures are markedly temperature dependent. The nonlinearity of the Richardson plot and the strong temperature dependence of the Schottky-barrier parameters indicate that the interface is spatially inhomogeneous. Plots of the zero-bias barrier height as a function of 1/(2kT) points to a Gaussian distribution of barrier heights with 0.90 eV mean height and 0.014 eV standard deviation. When this distribution is accounted for, a Richardson of 6.5 A/(cm K)2 results, relatively close to the 9.4/(cm K)2 predicted by theory. We conclude that, combined with a Gaussian distribution of barrier heights, the thermionic-emission mechanism explains the temperature-dependent I-V and C-V characteristics of the studied Schottky-barrier diodes.

  1. Electron power absorption dynamics in capacitive radio frequency discharges driven by tailored voltage waveforms in CF4

    Brandt, S.; Berger, B.; Schüngel, E.; Korolov, I.; Derzsi, A.; Bruneau, B.; Johnson, E.; Lafleur, T.; O’Connell, D.; Koepke, M.; Gans, T.; Booth, J.-P.; Donkó, Z.; Schulze, J.

    2016-08-01

    The power absorption dynamics of electrons and the electrical asymmetry effect in capacitive radio-frequency plasmas operated in CF4 and driven by tailored voltage waveforms are investigated experimentally in combination with kinetic simulations. The driving voltage waveforms are generated as a superposition of multiple consecutive harmonics of the fundamental frequency of 13.56 MHz. Peaks/valleys and sawtooth waveforms are used to study the effects of amplitude and slope asymmetries of the driving voltage waveform on the electron dynamics and the generation of a DC self-bias in an electronegative plasma at different pressures. Compared to electropositive discharges, we observe strongly different effects and unique power absorption dynamics. At high pressures and high electronegativities, the discharge is found to operate in the drift-ambipolar (DA) heating mode. A dominant excitation/ionization maximum is observed during sheath collapse at the edge of the sheath which collapses fastest. High negative-ion densities are observed inside this sheath region, while electrons are confined for part of the RF period in a potential well formed by the ambipolar electric field at this sheath edge and the collapsed (floating potential) sheath at the electrode. For specific driving voltage waveforms, the plasma becomes divided spatially into two different halves of strongly different electronegativity. This asymmetry can be reversed electrically by inverting the driving waveform. For sawtooth waveforms, the discharge asymmetry and the sign of the DC self-bias are found to reverse as the pressure is increased, due to a transition of the electron heating mode from the α-mode to the DA-mode. These effects are interpreted with the aid of the simulation results.

  2. Low Capacitive Inductors for Fast Switching Devices in Active Power Factor Correction Applications

    Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

    2014-01-01

    This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work is to...... investigate different winding approaches and identify suitable solutions for high switching frequency/high speed transition PFC designs. A low parasitic capacitance PCB based inductor design is proposed to address the challenges imposed by high switching frequency PFC Boost converters....

  3. Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

    Janssen, Jens; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruher Institut fuer Technologie, Karlsruhe (Germany); Collaboration: ATLAS-Collaboration

    2015-07-01

    With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

  4. Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

    With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

  5. Actively Biased p-Channel MOSFET Studied with Scanning Capacitance Microscopy

    DE WOLF,P.; DODD,PAUL E.; HETHERINGTON,DALE L.; NAKAKURA,CRAIG Y.; SHANEYFELT,MARTY R.

    1999-09-22

    Scanning capacitance microscopy (SCM) was used to study the cross section of an operating p-channel MOSFET. We discuss the novel test structure design and the modifications to the SCM hardware that enabled us to perform SCM while applying dc bias voltages to operate the device. The results are compared with device simulations performed with DAVINCI.

  6. Temperature dependence of current-and capacitance-voltage characteristics of an Au/4H-SiC Schottky diode

    Gülnahar, Murat

    2014-12-01

    In this study, the current-voltage (I-V) and capacitance-voltage (C-V) measurements of an Au/4H-SiC Schottky diode are characterized as a function of the temperature in 50-300 K temperature range. The experimental parameters such as ideality factor and apparent barrier height presents to be strongly temperature dependent, that is, the ideality factor increases and the apparent barrier height decreases with decreasing temperature, whereas the barrier height values increase with the temperature for C-V data. Likewise, the Richardson plot deviates at low temperatures. These anomaly behaviors observed for Au/4H-SiC are attributed to Schottky barrier inhomogeneities. The barrier anomaly which relates to interface of Au/4H-SiC is also confirmed by the C-V measurements versus the frequency measured in 300 K and it is interpreted by both Tung's lateral inhomogeneity model and multi-Gaussian distribution approach. The values of the weighting coefficients, standard deviations and mean barrier height are calculated for each distribution region of Au/4H-SiC using the multi-Gaussian distribution approach. In addition, the total effective area of the patches NAe is obtained at separate temperatures and as a result, it is expressed that the low barrier regions influence meaningfully to the current transport at the junction. The homogeneous barrier height value is calculated from the correlation between the ideality factor and barrier height and it is noted that the values of standard deviation from ideality factor versus q/3kT curve are in close agreement with the values obtained from the barrier height versus q/2kT variation. As a result, it can be concluded that the temperature dependent electrical characteristics of Au/4H-SiC can be successfully commented on the basis of the thermionic emission theory with both models.

  7. A fully enclosed, compact standard lightning impulse generator for testing ultra-high-voltage-class gas-insulated switchgears with high capacitance

    Wen, Tao; Zhang, Qiaogen; Zhang, Lingli; Zhao, Junping; Liu, Xuandong; Li, Xiaoang; Guo, Can; You, Haoyang; Chen, Weijiang; Yin, Yu; Shi, Weidong

    2016-03-01

    At present, conducting standard lightning impulse (LI) tests in the field for gas-insulated switchgear (GIS) equipment is difficult because of the high capacitance of the test equipment and large circuit inductance of traditional impulse devices, which leads to a wavefront time Tf ≥ 2.5 μs. A novel fully enclosed, compact standard LI generator for testing ultra-high-voltage-class GIS equipment with high capacitance is presented to solve the problem of Tf exceeding the standard during LI voltage tests for actual large-sized equipment. The impulse generator is installed in a metal vessel filled with SF6 or SF6/N2 gas mixture at a pressure of 0.3-0.5 MPa, providing a more compact structure and a lower series inductance. A newly developed conical voltage sensor is used to accurately measure the output voltage waveform. Two test modes (via bushing docking and direct docking) for the GIS test based on the impulse generator are introduced. Calculation results show that the impulse generator can generate an LI test waveform following the present IEC standard for the test of equipment with capacitance >10 000 pF.

  8. 多次级高压变压器的分布电容%Distributed capacitance of multi-level high-voltage transformer

    谢飞燕; 张灵迪

    2012-01-01

    The distributed capacitance is inherent in the multi-level high-voltage transformer parasitic parameters, which directly affects the circuit performance. According to the generation mechanism of distributed capacitance, through comparing the traditional method of winding and the technology of PCB Diego around, the measured waveform is used to illustrate the influence of distributed capacitance on circuit performance.%分布电容是多次级高压变压器固有的寄生参数,它直接影响电路的工作性能。本文从分布电容的产生机理出发,通过传统绕制和PCB迭绕两种工艺的比较,最后以实测波形来说明了分布电容对电路性能的影响。

  9. 中压配电网串联电容补偿调压技术研究及应用%Study and application of voltage regulation technology by series capacitance compensation in medium voltage distribution network

    吴勇海; 蔡金锭

    2012-01-01

    The medium voltage distribution lines with long power supply radius and broad load fluctuations, because of the larger voltage loss in the line, often result in low voltage and voltage fluctuation in the load-side, which is difficult to meet the requirements of voltage quality. The compensation of capacitor is calculated precisely under different loads, and then the maximum transmission capacity of the medium voltage radial line with the series capacitance compensation can be gotten when the voltage of the end line is stable. Simulation using Matlab/Simulink is carried out and the results verify the correctness of this calculation. The series capacitance compensator is applied to 10 kV radiation line and its normal operation and stable load-side voltage verify the practicality of series capacitance compensation.%对于供电半径大、负荷波动较大的中压配电线路,由于线路中的电压损耗较大,常常造成负荷端的电压值偏低、电压波动大,难以满足电压质量要求.通过对不同负荷情况下,对补偿电容量的精确计算,得到中压辐射线路的在电容串联补偿下稳定末端电压的最大输送容量,并通过Matlab仿真验证.在某电力公司10 kV线路接上串联电容补偿器,其正常运行并且稳定负荷侧电压验证了串联电容补偿调压的实用性.

  10. Application of capacitance compensation in voltage adjustment of distribution power system%电容补偿在配电网电压调节中的应用

    张先泰; 蔡金锭; 丁智华; 陈廉青

    2011-01-01

    针对某些配电网负荷电压水平不满足要求和电压波动较大的问题,提出基于串联电容补偿的配电网负荷电压调节与稳定方法.通过在配电线路上串入可调电容,根据电容电压损耗与线路原电感电压损耗极性相反的特征,在负荷波动的情况下利用电容电压抵偿线路电感电压即可调节和稳定负荷侧电压.通过实时采样负荷功率,计算补偿电路的晶闸管触发角,调节电容补偿量以稳定负荷侧电压.利用Matlab的PSB模块搭建了一条带有晶闸管控制串联电容补偿的配电线路,仿真结果验证了理论分析的正确性.%The series capacitance compensation is applied to realize the load voltage adjustment and stabilization for those distribution power systems which have large voltage fluctuation or could not meet the requirement of load voltage level. The adjustable capacitor is inserted into the distribution line and its voltage is used to compensate the line inductor voltage when load fluctuates,which could adjust and stabilize the voltage. The load power is sampled and the thyristor trigger angle of compensation circuit is calculated in real time to adjust the level of capacitance compensation. A distribution system model with series capacitance compensation is built with PSB module in Matlab and the simulative result verifies the correctness of the theoretical analysis.

  11. Voltage stability in low voltage microgrids in aspects of active and reactive power demand

    Parol Mirosław

    2016-03-01

    Full Text Available Low voltage microgrids are autonomous subsystems, in which generation, storage and power and electrical energy consumption appear. In the paper the main attention has been paid to the voltage stability issue in low voltage microgrid for different variants of its operation. In the introduction a notion of microgrid has been presented, and also the issue of influence of active and reactive power balance on node voltage level has been described. Then description of voltage stability issue has been presented. The conditions of voltage stability and indicators used to determine voltage stability margin in the microgrid have been described. Description of the low voltage test microgrid, as well as research methodology along with definition of considered variants of its operation have been presented further. The results of exemplary calculations carried out for the daily changes in node load of the active and reactive power, i.e. the voltage and the voltage stability margin indexes in nodes have been presented. Furthermore, the changes of voltage stability margin indexes depending on the variant of the microgrid operation have been presented. Summary and formulation of conclusions related to the issue of voltage stability in microgrids have been included at the end of the paper.

  12. Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

    A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions

  13. Phospholipase A2 activation by hydrogen peroxide during in vitro capacitation of buffalo spermatozoa.

    Shit, Sanjoy; Atreja, S K

    2004-05-01

    Progressively motile, washed buffalo spermatozoa (50 x 10(6) cells in 0.5 ml) were in vitro capacitated in HEPES containing Bovine Gamete Medium 3 (BGM3) in presence of heparin (10 microg/ml), and different concentrations of hydrogen peroxide (10 to 100 microM). Spermatozoa (60%) were capacitated in presence of heparin compared to 56% in presence of 25 microM H2O2 (optimally found suitable for capacitation). The extent of capacitation was measured in terms of acrosome reaction (AR) induced by lysophosphatidyl choline (100 microg/ml). The acrosome reacted cells were counted after triple staining. Catalase (100 microg/ml) significantly reduced the sperm capacitation to 16-18% when added with H2O2, or alone in the capacitation medium. Phospholipase A2 activity of spermatozoa increased linearly up to 50 microM H2O2 concentration included in the assay system. Moreover, significant increase in phospholipase A2 activity was observed after capacitation by both, the heparin and 25 microM H2O2. The activity was always higher in acrosome reacted cells. PMID:15233473

  14. Nonlinear Quantum Capacitance

    Wang, B; Zhao, X; Guo, H; Wang, J.

    1999-01-01

    We analyze the nonlinear voltage dependence of electrochemical capacitance for nanoscale conductors. This voltage dependence is due to the finite density of states of the conductors. Within Hartree theory we derive an exact expression for the electrochemical capacitance–voltage curve for a parallel plate system. The result suggests a quantum scanning capacitance microscopy at the nanoscale: by inverting the capacitance–voltage expression one is able to deduce the local spectral function of th...

  15. Program-Controlled High Voltage Module in Active Voltage Dividers(AVD) for MPGD

    Ginting, Muhammad Fadhil

    2016-01-01

    Micro Pattern Gas Detectors (MPGD) applications are rapidly developing and became an important part of upgrades for the LHC detectors. RD51/CERN have worked on Active Voltage Divider (AVD) technology for multistage MPGDs, One of the next developments for the AVD is to design and integrate high voltage module in a single box. The Program-Controlled High Voltage Module, part of one AIDA2020 project, has been successfully designed and developed, and can be integrated in AVD design.

  16. Control of electron heating and ion energy distributions in capacitive plasmas by voltage waveform tailoring based on a novel power supply and impedance matching

    Berger, Birk; Franek, James; Brandt, Steven; Liese, Martin; Barthel, Matthias; Schuengel, Edmund; Koepke, Mark; Schulze, Julian

    2015-09-01

    We present a novel RF power supply and impedance matching to drive technological plasmas with customized voltage waveforms. By adjusting the individual phases and amplitudes of multiple consecutive harmonics any voltage waveform can be realized as a customized finite Fourier series. This RF supply system is easily adaptable to any technological plasma for industrial applications and allows the commercial utilization of process optimization based on voltage waveform tailoring for the first time. Here, this system is tested on a capacitive discharge based on three consecutive harmonics of 13.56 MHz in argon. The effect of changing the shape of the driving voltage waveform on the electron heating and sheath dynamics is investigated by Phase Resolved Optical Emission Spectroscopy (PROES) for different electrode gaps, pressures, and applied voltages. At low pressure the results are correlated with ion energy distribution functions measured at both electrodes. Tuning the phases between the applied harmonics results in an electrical control of the DC self-bias and the mean ion energy. A comparison with the reference case of a dual-frequency discharge reveals that using more than two consecutive harmonics significantly enlarges the control range of the mean ion energy.

  17. A novel single-stage isolated ac/dc converter with quasi-resonant zero-voltage-switching with a modified forward converter adopting capacitive output filter

    Kim, Myung-Bok; Youn, Myung-Joong

    2010-07-01

    A new single-stage isolated ac-dc converter, which can achieve a better efficiency and a better power factor, is proposed. It is based on a general forward topology so that it can utilise the transformer more than converters based on flyback topology. In addition, since the capacitive output filter is adopted instead of an inductive type filter, the voltages on the secondary rectifiers can be clamped to the output voltage; meanwhile, the capacitor used in the output filter can be utilised for the resonance with the leakage inductance, and the turn-off loss in the primary main switch and the dissipative loss in the snubber can be reduced. Moreover, since this converter can be operated at the boundary conduction mode, the line input current can be automatically shaped as the waveform of a line voltage and quasi-resonant zero voltage switching can be also obtained. Therefore, it features higher efficiency, lower voltage stress and a smaller-sized transformer than other topologies. A 100 W prototype has been built and tested for the verification of the proposed topology.

  18. Electrochemical activation of carbon cloth in aqueous inorganic salt solution for superior capacitive performance

    Ye, Dong; Yu, Yao; Tang, Jie; Liu, Lin; Wu, Yue

    2016-05-01

    Carbon cloth (CC) is an inexpensive and highly conductive textile with excellent mechanical flexibility and strength; it holds great promise as an electrode material for flexible supercapacitors. However, pristine CC has such a low surface area and poor electrochemical activity that the energy storage capability is usually very poor. Herein, we report a green method, two-step electrochemical activation in an aqueous solution of inorganic salts, to significantly enhance the capacitance of CC for supercapacitor application. Micro-cracks, exfoliated carbon fiber shells, and oxygen-containing functional groups (OFGs) were introduced onto the surface of the carbon filament. This resulted in an enhancement of over two orders of magnitude in capacitance compared to that of the bare CC electrode, reaching up to a maximum areal capacitance of 505.5 mF cm-2 at the current density of 6 mA cm-2 in aqueous H2SO4 electrolyte. Electrochemical reduction of CC electrodes led to the removal of most electrochemically unstable surface OFGs, resulting in superior charging/discharging rate capability and excellent cycling stability. Although the activated CC electrode contained a high-level of surface oxygen functional groups (~15 at%), it still exhibited a remarkable charging-discharging rate capability, retaining ~88% of the capacitance when the charging rate increased from 6 to 48 mA cm-2. Moreover, the activated CC electrode exhibited excellent cycling stability with ~97% capacitance remaining after 10 000 cycles at a current density of 24 mA cm-2. A symmetrical supercapacitor based on the activated CC exhibited an ideal capacitive behavior and fast charge-discharge properties. Such a simple, environment-friendly, and cost-effective strategy to activate CC shows great potential in the fabrication of high-performance flexible supercapacitors.Carbon cloth (CC) is an inexpensive and highly conductive textile with excellent mechanical flexibility and strength; it holds great promise as

  19. Comparison of capacitive behavior of activated carbons with different pore structures in aqueous and nonaqueous systems

    ZHOU Shao-yun; LI Xin-hai; WANG Zhi-xing; GUO Hua-jun; PENG Wen-jie

    2008-01-01

    The pore structures of two activated carbons from sawdust with KOH activation and coconut-shell with steam activation for supercapacitor were analyzed by N2 adsorption method. The electrochemical properties of both activated carbons in 6mol/L KOH solution and 1mol/L Et4NPF4/PC were compared, and the effect of pore structure on the capacitance was investigated by cyclic voltammetry, AC impedance and charge-discharge measurements. The results indicate that the capacitance mainly depends on effective surface area, but the power property mainly depends on mesoporosity. At low specific current (1A/g), the maximum specific capacitances of 276.3F/g in aqueous system and 123.9F/g in nonaqueous system can be obtained from sawdust activated carbon with a larger surface area of 1808m2/g, but at a high specific current, the specific capacitance of coconut-shell activated carbon with a higher mesoporosity of 75.1% is more excellent. Activated carbon by KOH activation is fitter for aqueous system and that by steam activation is fitter for nonaqueous system.

  20. Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO{sub 2}/p-Si metal–insulator–semiconductor structure

    Panda, J.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Chattopadhyay, S. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Amity Institute of Nano Technology, Amity University, Sector-125, Noida, Uttar Pradesh 201313 (India)

    2013-12-14

    This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO{sub 2}/p-Si (100) heterojunction in the temperature range of 10–300 K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through native oxide SiO{sub 2} layer. The clockwise hysteresis loop has been observed in the capacitance-voltage characteristics measured at various frequencies mainly due to presence of trap centers at the TiN(Ni)/SiO{sub 2} interface and these are temperature dependent. The spin-dependent trap charge effect at the interface influences the quadratic nature of the capacitance with magnetic field. The junction magnetocapacitance (JMC) is observed to be dependent on both temperature and frequency. The highest JMC of this heterojunction has been observed at 200 K at higher frequencies (100 kHz–1 MHz). It is found that there is not much effect of band structure modification under magnetic field causing the JMC.

  1. Electrochemical activation of carbon cloth in aqueous inorganic salt solution for superior capacitive performance.

    Ye, Dong; Yu, Yao; Tang, Jie; Liu, Lin; Wu, Yue

    2016-05-21

    Carbon cloth (CC) is an inexpensive and highly conductive textile with excellent mechanical flexibility and strength; it holds great promise as an electrode material for flexible supercapacitors. However, pristine CC has such a low surface area and poor electrochemical activity that the energy storage capability is usually very poor. Herein, we report a green method, two-step electrochemical activation in an aqueous solution of inorganic salts, to significantly enhance the capacitance of CC for supercapacitor application. Micro-cracks, exfoliated carbon fiber shells, and oxygen-containing functional groups (OFGs) were introduced onto the surface of the carbon filament. This resulted in an enhancement of over two orders of magnitude in capacitance compared to that of the bare CC electrode, reaching up to a maximum areal capacitance of 505.5 mF cm(-2) at the current density of 6 mA cm(-2) in aqueous H2SO4 electrolyte. Electrochemical reduction of CC electrodes led to the removal of most electrochemically unstable surface OFGs, resulting in superior charging/discharging rate capability and excellent cycling stability. Although the activated CC electrode contained a high-level of surface oxygen functional groups (∼15 at%), it still exhibited a remarkable charging-discharging rate capability, retaining ∼88% of the capacitance when the charging rate increased from 6 to 48 mA cm(-2). Moreover, the activated CC electrode exhibited excellent cycling stability with ∼97% capacitance remaining after 10 000 cycles at a current density of 24 mA cm(-2). A symmetrical supercapacitor based on the activated CC exhibited an ideal capacitive behavior and fast charge-discharge properties. Such a simple, environment-friendly, and cost-effective strategy to activate CC shows great potential in the fabrication of high-performance flexible supercapacitors. PMID:27141910

  2. 周边电场对电容分压型 EVT 准确度的影响研究%Study on the Surrounding Influence of Electric Field on Accuracy of Electronic Voltage Transformer with Capacitive Voltage Divider

    冯宇; 王晓琪; 艾兵; 吴光斌; 罗睿希; 江波

    2014-01-01

    A lot of problems occur in the application of electronic transformer for smart substation, where stray capaci-tance and proximity effects caused by the surrounding electric field are the main factors for capacitive electronic volt-age transformer accuracy.Interference mechanism and mathematical model are analyzed firstly with studying the influ-ence of electric field on the accuracy of EVT.The finite element model of a typical capacitance-divide EVT in opera-tion has been built.The influence of stray capacitance and proximity effect on EVT accuracy has been simulated and the shielding effectiveness has also been evaluated for the high voltage terminal shield.The simulation results show that the stray capacitance of ground terminal is greater than the that of high voltage terminal, EVT divide ratio effected by stray capacitance will be reduced along with the enlarged distance between EVT or between EVT and grounded ob-jects, the divide ratio and ratio error will get greater when the voltage of adjacent phase increased, and the high volt-age terminal shield can reduce the influence of proximity effect by improving potential distribution which reduced the horizontal component of electric field.The conclusion can be taken as the ssvaluable reference for optimization design of EVT.%电子式互感器在智能变电站应用中出现了不少问题,其中由周边电场所引起的杂散电容与邻近效应是影响电容分压型电子式电压互感器准确度的主要因素之一。首先分析了周边电场对电容分压型EVT准确度的干扰机理与数学模型,其次建立了典型在运电容分压型EVT的有限元计算模型,以此为基础仿真研究了杂散电容与邻近效应对其准确度的影响,并对高压端屏蔽罩的屏蔽效能进行了评估。仿真结果表明:地端杂散电容大于高压端杂散电容,杂散电容对EVT分压比的影响随着EVT与接地体之间的距离增大或三相EVT之间的距离增大而减

  3. Estrous sheep serum enables in vitro capacitation of ram spermatozoa while preventing caspase activation.

    Del Olmo, E; García-Álvarez, O; Maroto-Morales, A; Ramón, M; Jiménez-Rabadán, P; Iniesta-Cuerda, M; Anel-Lopez, L; Martinez-Pastor, F; Soler, A J; Garde, J J; Fernández-Santos, M R

    2016-01-15

    Estrous sheep serum (ESS) is considered the most efficient agent for in vitro capacitation of ram spermatozoa. We have explored the relationship between caspase activation and capacitation in ram. Semen samples from 17 rams were cryopreserved. In vivo fertility was evaluated after intrauterine artificial insemination. Samples were submitted to four treatments: control, ESS (10%), caspase inhibitor (Z-VAD-FMK), and estrous ewe serum plus caspase inhibitor (I + E). Sperm samples were incubated for 30 minutes at 38.5 °C and 5% CO2 and analyzed with flow cytometry for mitochondrial membrane potential (MitoTracker deep red), sperm viability and apoptosis-like changes (YO-PRO-1/propidium iodide), acrosomal status (peanut agglutinin-fluorescein isothiocyanate), membrane fluidity (merocyanine 540), and caspase activity (Vybrant FAM kits for polycaspases, caspase-8, and caspases 3-7). Estrous sheep serum induced changes compatible with capacitation, doubling the proportion of viable spermatozoa with increased merocyanine 540 and increasing YO-PRO-1(+) and acrosome-reacted spermatozoa (P < 0.05). Incubation increased the proportion of spermatozoa with activated caspases (P < 0.05), which was abolished by the treatments. We detected a simultaneous decrease in the proportion of the viable and caspase(-) spermatozoa after the incubation, which was prevented by the presence of estrous ewe serum (P < 0.05). The analysis of caspases 3/7 and 8 resulted in less marked differences. Fertility was positively related to viability and inactivated caspases and negatively to viable-capacitated spermatozoa and active caspases. In vitro induction of capacitation in thawed ram spermatozoa by using ESS suggests a downregulation in apoptotic pathways. However, males with the lowest fertility showed parameters similar to high-fertility males, suggesting that other factors were involved apart from capacitation and/or caspase activation. PMID:26474680

  4. Capacitance enhancement of polyaniline coated curved-graphene supercapacitors in a redox-active electrolyte

    Chen, Wei

    2013-01-01

    We show, for the first time, a redox-active electrolyte in combination with a polyaniline-coated curved graphene active material to achieve significant enhancement in the capacitance (36-92% increase) compared to supercapacitors that lack the redox-active contribution from the electrolyte. The supercapacitors based on the redox-active electrolyte also exhibit excellent rate capability and very long cycling performance (>50 000 cycles). This journal is © The Royal Society of Chemistry.

  5. The effect of pulse voltage and capacitance on biosorption of uranium by biomass derived from whiskey distillery spent wash

    Bustard, M.; Rollan, A.; McHale, A.P. [Biotechnology Research Group, School of Applied Biological and Chemical Sciences, University of Ulster (United Kingdom)

    1999-01-01

    Biosorption of uranium by residual biomass from The Old Bushmill`s Distillery Co. Ltd., Bushmills, Co. Antrim, Northern Ireland, following exposure to short and intense electric pulses has been examined. The biomass was prepared from the distillery spent wash and consisted of non-viable yeast and bacterial cells. As shown previously, untreated biomass had a maximum biosorption capacity of 170 mg uranium/g dry weight biomass. When biosorption reactions were placed between two electrodes and exposed to electric pulses with field strengths ranging from 1.25-3.25 kV/cm at a capacitance of 25 {mu}F, biosorption increased from 170 mg of uranium to 275 mg uranium/g dry weight biomass. The data were obtained from biosorption isotherm analyses and taken as the degree of biosorption at residual uranium concentrations of 3 mM. In addition, when the capacitance of the electric pulses increased from 0.25 {mu}F to 25 {mu}F at a fixed pulse field strength the degree of biosorption increased from 210 mg uranium to 240 mg uranium/g dry weight biomass. The results suggest that application of short and intense electric pulses to biosorption reactions may play an important role in enhancing microbial biosorption of toxic metals/radionuclides from waste water streams. (orig.) With 2 tabs., 10 refs.

  6. The effect of pulse voltage and capacitance on biosorption of uranium by biomass derived from whiskey distillery spent wash

    Biosorption of uranium by residual biomass from The Old Bushmill's Distillery Co. Ltd., Bushmills, Co. Antrim, Northern Ireland, following exposure to short and intense electric pulses has been examined. The biomass was prepared from the distillery spent wash and consisted of non-viable yeast and bacterial cells. As shown previously, untreated biomass had a maximum biosorption capacity of 170 mg uranium/g dry weight biomass. When biosorption reactions were placed between two electrodes and exposed to electric pulses with field strengths ranging from 1.25-3.25 kV/cm at a capacitance of 25 μF, biosorption increased from 170 mg of uranium to 275 mg uranium/g dry weight biomass. The data were obtained from biosorption isotherm analyses and taken as the degree of biosorption at residual uranium concentrations of 3 mM. In addition, when the capacitance of the electric pulses increased from 0.25 μF to 25 μF at a fixed pulse field strength the degree of biosorption increased from 210 mg uranium to 240 mg uranium/g dry weight biomass. The results suggest that application of short and intense electric pulses to biosorption reactions may play an important role in enhancing microbial biosorption of toxic metals/radionuclides from waste water streams. (orig.)

  7. High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

    Giusi, G.; Giordano, O.; Scandurra, G.; Rapisarda, M.; Calvi, S.; Ciofi, C.

    2016-04-01

    Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz1/2, while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.

  8. Capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN MIS structures

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Nikolaev, A. E.; Lundin, V. V.; Sakharov, A. V.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Afanas’ev, A. V.; Romanov, A. A.; Osachev, E. V. [St. Petersburg Electrotechnical University LETI (Russian Federation)

    2015-08-15

    The capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10{sup 6} V/cm, 7.5, and 3 × 10{sup 12} cm{sup −2}, respectively.

  9. Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance

    Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al0.3Ga0.7N layer growth. For frequencies below 108 Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation between frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al0.3Ga0.7N barriers (20%). The specific resistance of the layers below the gate is above 105 Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer

  10. Effect of SrTiO3 thickness on the capacitance-voltage characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO3/LaVO3 epitaxial heterostructures

    We report the effect of SrTiO3 thickness on the capacitance-voltage (C-V) characteristics of (La,Sr)CoO3/(Pb,La)(Zr,Ti)O3/SrTiO3/LaVO3 metal-ferroelectric-insulator-semiconductor (MFIS) epitaxial heterostructures. The C-V measurement of the heterostructure exhibited the asymmetry of capacitance with respect to gate bias. Within the given thickness range (5-30 nm), the amount of capacitance reduction at positive gate bias and the rapidness of capacitance reduction decreased with increasing SrTiO3 thickness, which is consistent with the C-V characteristics of conventional silicon-based MFIS capacitors. These results suggest that quantitative understanding on the electrical behavior of oxide heterostructures is possible with C-V analysis, with potentially important implications on their device applications. (orig.)

  11. Performance Analysis and Test of Noise in Differential Capacitance to Voltage Conversion Circuit%差分电容电压转换电路噪声性能分析及测试

    张霞; 胡世昌; 朱辉杰

    2011-01-01

    本文对电容检测式加速度计系统中广泛采用的差分电容电压转换电路建立了电容电压转换电路的等效噪声模型,并对双运放集成电路芯片所构成的差分电容电压转换电路的本底噪声以及仪表放大器输出端的噪声进行了测试,将电容电压转换电路本底噪声中的差模噪声分量和共模噪声分量进行了分离.测试结果表明影响加速度计系统噪声性能的差模噪声分量占电容电压转换电路本底噪声的50%.%This paper presents an equivalent noise model of differential capacitance to voltage conversion circuit which is widely used in capacitive sensing accelerometers. The noise floors of the capacitance to voltage conversion circuit realized by dual amplifiers (two in a package) and the instrumentation amplifier are measured. The common-mode noise and the difference-mode noise in the noise floor of the capacitance to voltage conversion circuit can be calculated. The test results show that the difference-mode noise, which would affect the resolution of the capacitive sensing accelerometer system, constitutes nearly half the noise floor of the capacitance to voltage conversion circuit.

  12. Formaldehyde assay by capacitance versus voltage and impedance measurements using bi-layer bio-recognition membrane.

    Ben Ali, M; Korpan, Y; Gonchar, M; El'skaya, A; Maaref, M A; Jaffrezic-Renault, N; Martelet, C

    2006-12-15

    A novel formaldehyde sensitive biosensor based on bacterial formaldehyde dehydrogenase (FDH) as a bio-recognition element has been developed. The bio-recognition membrane had bi-layer architecture and consisted of FDH, cross-linked with albumin, and of the cofactor NAD at a high concentration level (first layer). The second layer was a negatively charged Nafion membrane, which prevented a leakage of negatively charged NAD molecules from the bio-membrane. As transducers, gold electrodes SiO(2)/Si/SiO(2)/Ti/Au and electrolyte-insulator-semiconductor Si/SiO(2) (EIS) structures have been used. Changes in capacitance and impedance properties of the bio-recognition membrane have been used for monitoring formaldehyde concentration in a bulk solution. It has been shown that formaldehyde can be detected within a concentration range from 1 microM to 20mM depending on the type of transduction used, with a detection limit of 1 and 100 microM for gold-based and EIS-based transducers, respectively. PMID:16516460

  13. Asymmetric Electrodes Constructed with PAN-Based Activated Carbon Fiber in Capacitive Deionization

    Mingzhe Li; Yingzhi Chen; Zheng-Hong Huang; Feiyu Kang

    2014-01-01

    Capacitive deionization (CDI) method has drawn much attention for its low energy consumption, low pollution, and convenient manipulation. Activated carbon fibers (ACFs) possess high adsorption ability and can be used as CDI electrode material. Herein, two kinds of PAN-based ACFs with different specific surface area (SSA) were used for the CDI electrodes. The CDI performance was investigated; especially asymmetric electrodes’ effect was evaluated. The results demonstrated that PAN-based ACFs s...

  14. Highly porous activated carbons from resource-recovered Leucaena leucocephala wood as capacitive deionization electrodes.

    Hou, Chia-Hung; Liu, Nei-Ling; Hsi, Hsing-Cheng

    2015-12-01

    Highly porous activated carbons were resource-recovered from Leucaena leucocephala (Lam.) de Wit. wood through combined chemical and physical activation (i.e., KOH etching followed by CO2 activation). This invasive species, which has severely damaged the ecological economics of Taiwan, was used as the precursor for producing high-quality carbonaceous electrodes for capacitive deionization (CDI). Carbonization and activation conditions strongly influenced the structure of chars and activated carbons. The total surface area and pore volume of activated carbons increased with increasing KOH/char ratio and activation time. Overgasification induced a substantial amount of mesopores in the activated carbons. In addition, the electrochemical properties and CDI electrosorptive performance of the activated carbons were evaluated; cyclic voltammetry and galvanostatic charge/discharge measurements revealed a typical capacitive behavior and electrical double layer formation, confirming ion electrosorption in the porous structure. The activated-carbon electrode, which possessed high surface area and both mesopores and micropores, exhibited improved capacitor characteristics and high electrosorptive performance. Highly porous activated carbons derived from waste L. leucocephala were demonstrated to be suitable CDI electrode materials. PMID:26135977

  15. Improvement in electrochemical capacitance of activated carbon from scrap tires by nitric acid treatment

    Han, Yan; Zhao, Ping-Ping; Dong, Xiao-Ting; Zhang, Cui; Liu, Shuang-Xi

    2014-12-01

    Activated carbon (AC) obtained from the industrial pyrolytic tire char is treated by concentrated nitric acid (AC-HNO3) and then used as the electrode material for supercapacitors. Surface properties and electrochemical capacitances of AC and ACHNO3 are studied. It is found that the morphology and the porous texture for AC and AC-HNO3 have little difference, while the oxygen content increases and functional groups change after the acid treatment. Electrochemical results demonstrate that the AC-HNO3 electrode displays higher specific capacitance, better stability and cycling performance, and lower equivalent series resistance, indicating that AC obtained from the industrial pyrolytic tire char treated by concentrated nitric acid is applicable for supercapacitors.

  16. Voltage-clamp frequency domain analysis of NMDA-activated neurons.

    Moore, L E; Hill, R H; Grillner, S

    1993-02-01

    1. Voltage and current-clamp steps were added to a sum of sine waves to measure the tetrodotoxin-insensitive membrane properties of neurons in the intact lamprey spinal cord. A systems analysis in the frequency domain was carried out on two types of cells that have very different morphologies in order to investigate the structural dependence of their electrophysiological properties. The method explicitly takes into account the geometrical shapes of (i) nearly spherical dorsal cells with one or two processes and (ii) motoneurons and interneurons that have branched dendritic structures. Impedance functions were analysed to obtain the cable properties of these in situ neurons. These measurements show that branched neurons are not isopotential and, therefore, a conventional voltage-clamp analysis is not valid. 2. The electrophysiological data from branched neurons were curve-fitted with a lumped soma-equivalent cylinder model consisting of eight equal compartments coupled to an isopotential cell body to obtain membrane parameters for both passive and active properties. The analysis provides a quantitative description of both the passive electrical properties imposed by the geometrical structure of neurons and the voltage-dependent ionic conductances determined by ion channel kinetics. The model fitting of dorsal cells was dominated by a one-compartment resistance and capacitance in parallel (RC) corresponding to the spherical, non-branched shape of these cells. Branched neurons required a model that contained both an RC compartment and a cable that reflected the structure of the cells. At rest, the electrotonic length of the cable was about two. Uniformly distributed voltage-dependent ionic conductance sites were adequate to describe the data at different membrane potentials. 3. The frequency domain admittance method in conjunction with a step voltage clamp was used to control and measure the oscillatory behavior induced by N-methyl-D-aspartate (NMDA) on lamprey spinal

  17. Voltage harmonics mitigation through hybrid active power filer

    Fast dynamic response, high efficiency, low cost and small size of power electronic converters have exponentially increased their use in modern power system which resulted in harmonically distorted voltage and currents. Voltage harmonics mainly caused by current harmonics are more dangerous as performance and expected operating life of other power system equipment are affected by harmonically distorted supply voltage. Electronic filter circuits are used to improve system power quality by mitigating adverse effects of harmonics. Hybrid filters having advantages of both passive and active filters are preferred to resolve the problem of harmonics efficiently and avoiding any chance of resonance. In this paper, a three phase three wire network is considered to supply an adjustable speed drive represented by a resistive load connected across a three phase bridge rectifier. Simulation of the considered system shows THD (Total Harmonic Distortion) of 18.91 and 7.61 percentage in supply current and voltage respectively. A HAPF (Hybrid Active Power Filter) is proposed to reduce these THD values below 5 percentage as recommended by IEEE Standard-519. P-Q theorem is used to calculate required parameters for proposed filter, which is implemented through hysteresis control. Simulation results confirm the effectiveness of the designed filter as THD for both current and voltage have reduced below allowable limit of 5 percentage. (author)

  18. Voltage Harmonics Mitigation through Hybrid Active Power Filter

    Anwer Ali Sahito

    2016-01-01

    Full Text Available Fast dynamic response, high efficiency, low cost and small size of power electronic converters have exponentially increased their use in modern power system which resulted in harmonically distorted voltage and currents. Voltage harmonics mainly caused by current harmonics are more dangerous as performance and expected operating life of other power system equipment are affected by harmonically distorted supply voltage. Electronic filter circuits are used to improve system power quality by mitigating adverse effects of harmonics. Hybrid filters having advantages of both passive and active filters are preferred to resolve the problem of harmonics efficiently and avoiding any chance of resonance. In this paper, a three phase three wire network is considered to supply an adjustable speed drive represented by a resistive load connected across a three phase bridge rectifier. Simulation of the considered system shows THD (Total Harmonic Distortion of 18.91 and 7.61% in supply current and voltage respectively. A HAPF (Hybrid Active Power Filter is proposed to reduce these THD values below 5% as recommended by IEEE Standard-519. P-Q theorem is used to calculate required parameters for proposed filter, which is implemented through hysteresis control. Simulation results confirm the effectiveness of the designed filter as THD for both current and voltage have reduced below allowable limit of 5%.

  19. Optical absorption of the anthracene and temperature-dependent capacitance-voltage characteristics of the Au/anthracene/n-Si heterojunction in metal-organic-semiconductor configuration

    Kaçus, H.; Aydoğan, Ş.; Ekinci, D.; Kurudirek, S. V.; Türüt, A.

    2015-11-01

    An anthracene film has been deposited on an n-type silicon to fabricate an Au/anthracene/n-Si junction device. The band gap of the anthracene film has been determined from the optical measurement as Eg=1.65 eV. After the fabrication of the Au/anthracene/n-Si junction device, temperature dependent capacitance-voltage characteristics in the range of 160-300 K were studied to obtain the junction parameters of the device. The diffusion potential, barrier height, Fermi energy level and donor concentration parameters have been determined from the linear 1/C2-V curves with reverse bias at all temperatures. Both Fermi energy level and the barrier height increased with the increasing temperature. Temperature-dependence of the barrier height has been attributed to inhomogeneous barrier, traps and interface states. The ionized donor concentrations have varied with the temperature in an unsystematic manner due to the trapping/de-trapping of the charges at various temperatures.

  20. Voltage-dependent capacitance behavior and underlying mechanisms in metal-insulator-metal capacitors with Al2O3-ZrO2-SiO2 nano-laminates

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Ding, Shi-Jin

    2016-04-01

    Nano-laminates consisting of high-permittivity dielectrics and SiO2 have been extensively studied for radio frequency metal-insulator-metal (MIM) capacitors because of their superior voltage linearity and low leakage current. However, there are no reports on the capacitance-voltage (C-V) characteristics at a high sweep voltage range. In this work, an interesting variation in the voltage-dependent capacitance that forms a ‘ω’-like shape is demonstrated for the MIM capacitors with Al2O3/ZrO2/SiO2 nano-laminates. As the thickness ratio of the SiO2 film to the total insulator increases to around 0.15, the C-V curve changes from an upward parabolic shape to a ‘ω’ shape. This can be explained based on the competition between the orientation polarization from SiO2 and the electrode polarization from Al2O3 and ZrO2. When the SiO2 film is very thin, the electrode polarization dominates in the MIM capacitor, generating a positive curvature C-V curve. When the thickness of SiO2 is increased, the orientation polarization is enhanced and thus both polarizations are operating in the MIM capacitors. This leads to the appearance of a multiple domain C-V curve containing positive and negative curvatures. Therefore, good consistency between the experimental results and the theoretical simulations is demonstrated. Such voltage-dependent capacitance behavior is not determined by the stack structure of the insulator, measurement frequency and oscillator voltage, but by the thickness ratio of the SiO2 film to the whole insulator. These findings are helpful to engineer MIM capacitors with good voltage linearity.

  1. Enhanced Capacitive Performance of N-Doped Activated Carbon from Petroleum Coke by Combining Ammoxidation with KOH Activation.

    Zhang, Yan; Zhang, Yu; Huang, Jufeng; Du, Dongfeng; Xing, Wei; Yan, Zifeng

    2016-12-01

    Low cost with high specific capacitance and energy density is the critical and main requirement for practical supercapacitors. A novel N-doped activated carbon was fabricated by KOH activation of petroleum coke and ammonia treatment. The as-prepared carbon exhibits a high specific surface area (1875 m(2) g(-1)), excellent conductivity (57 S m(-1)), and rich nitrogen level (4.0 wt%). Those outstanding characters result in this porous carbon a hopeful electrode material for electrochemical supercapacitors. It shows high specific capacitance (up to 299 F g(-1)) and superior rate capability (76 % retention ratio at 20 A g(-1)) in 30 wt% KOH aqueous electrolyte. This efficient treatment method ensures its prosperous application in energy storage systems. PMID:27167734

  2. Enhanced Capacitive Performance of N-Doped Activated Carbon from Petroleum Coke by Combining Ammoxidation with KOH Activation

    Zhang, Yan; Zhang, Yu; Huang, Jufeng; Du, Dongfeng; Xing, Wei; Yan, Zifeng

    2016-05-01

    Low cost with high specific capacitance and energy density is the critical and main requirement for practical supercapacitors. A novel N-doped activated carbon was fabricated by KOH activation of petroleum coke and ammonia treatment. The as-prepared carbon exhibits a high specific surface area (1875 m2 g-1), excellent conductivity (57 S m-1), and rich nitrogen level (4.0 wt%). Those outstanding characters result in this porous carbon a hopeful electrode material for electrochemical supercapacitors. It shows high specific capacitance (up to 299 F g-1) and superior rate capability (76 % retention ratio at 20 A g-1) in 30 wt% KOH aqueous electrolyte. This efficient treatment method ensures its prosperous application in energy storage systems.

  3. Module Eleven: Capacitance; Basic Electricity and Electronics Individualized Learning System.

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will learn about another circuit quantity, capacitance, and discover the effects of this component on circuit current, voltage, and power. The module is divided into seven lessons: the capacitor, theory of capacitance, total capacitance, RC (resistive-capacitive circuit) time constant, capacitive reactance, phase and…

  4. Enhancing capacitive deionization performance of electrospun activated carbon nanofibers by coupling with carbon nanotubes.

    Dong, Qiang; Wang, Gang; Wu, Tingting; Peng, Senpei; Qiu, Jieshan

    2015-05-15

    Capacitive deionization (CDI) is an alternative, effective and environmentally friendly technology for desalination of brackish water. The performance of the CDI device is highly determined by the electrode materials. In this paper, a composite of carbon nanotubes (CNTs) embedded in activated carbon nanofiber (ACF) was prepared by a direct co-electrospinning way and subsequent CO2 activation. The introduction of CNTs can greatly improve the conductivity while the CO2-mediated activation can render the final product with high porosity. As such, the hybrid structure can provide an excellent storage space and pathways for ion adsorption and conduction. When evaluated as electrode materials for CDI, the as-prepared CNT/ACF composites with higher electrical conductivity and mesopore ratios exhibited higher electrosorption capacity and good regeneration performance in comparison with the pure ACF. PMID:25595622

  5. Experimental Comparison of two Active Vibration Control Approaches: Velocity Feedback and Negative Capacitance Shunt Damping

    Beck, Benjamin; Schiller, Noah

    2013-01-01

    This paper outlines a direct, experimental comparison between two established active vibration control techniques. Active vibration control methods, many of which rely upon piezoelectric patches as actuators and/or sensors, have been widely studied, showing many advantages over passive techniques. However, few direct comparisons between different active vibration control methods have been made to determine the performance benefit of one method over another. For the comparison here, the first control method, velocity feedback, is implemented using four accelerometers that act as sensors along with an analog control circuit which drives a piezoelectric actuator. The second method, negative capacitance shunt damping, consists of a basic analog circuit which utilizes a single piezoelectric patch as both a sensor and actuator. Both of these control methods are implemented individually using the same piezoelectric actuator attached to a clamped Plexiglas window. To assess the performance of each control method, the spatially averaged velocity of the window is compared to an uncontrolled response.

  6. Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

    Zhang, Zhe; Andersen, Michael A. E.

    2015-04-01

    Dielectric electro active polymer (DEAP) can be used in actuation, sensing and energy harvesting applications, but driving the DEAP based actuators and generators has three main challenges from a power electronics standpoint, i.e. high voltage (around 2.5 kV), nonlinearity, and capacitive behavior. In this paper, electronics divers for heating valves, loud speakers, incremental motors, and energy harvesting are reviewed, studied and developed in accordance with their corresponding specifications. Due to the simplicity and low power capacity (below 10W), the reversible Fly-back converters with both magnetic and piezoelectric transformers are employed for the heating valve and incremental motor application, where only ON/OFF regulation is adopted for energy saving; as for DEAP based energy harvesting, the noisolated Buck/Boost converter is used, due to the system high power capacity (above 100W), but the voltage balancing across the series-connected high voltage IGBTs is a critical issue and accordingly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi-level Buck converter based Class-D amplifier, because of its high control linearity, is implemented for the loud speaker applications. A synthesis among those converter topologies and control techniques is given; therefore, for those DEAP based applications, their diversity and similarity of electronics drivers, as well as the key technologies employed are analyzed. Therefore a whole picture of how to choose the proper topologies can be revealed. Finally, the design guidelines in order to achieve high efficiency and reliability are discussed.

  7. Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

    Vais, Abhitosh; Franco, Jacopo; Lin, Han-Chung; Collaert, Nadine; Mocuta, Anda; De Meyer, Kristin; Thean, Aaron

    2015-11-01

    In this work, we discuss how the position of the flat band voltage with respect to the starting voltage of the C-V measurement sweep can influence the estimation of the hysteresis in high-k/InGaAs MOS devices. We show that, with the support of experimental data and conceptual oxide defect band calculations, the interpretation and subsequent parameter extraction from flat-band voltage shifts observed in III-V MOS devices is more complex as compared to Si gate stacks. It is demonstrated that such complication arises due to the wider distribution of defect levels in the dielectric band gap in the case of InGaAs/high-k stack as compared to standard Si/SiO2/HfO2 MOS. In particular, for Al2O3 deposited on InGaAs, two wide, partially overlapping oxide defect bands are identified, centered ˜1.5 eV and ˜0.5 eV above and below the channel conduction band, respectively. Such defect levels are expected to affect the device operation and reliability.

  8. Role of titania incorporated on activated carbon cloth for capacitive deionization of NaCl solution.

    Ryoo, Min-Woong; Kim, Jong-Ho; Seo, Gon

    2003-08-15

    Adsorption isotherms of NaCl on activated carbon cloth (ACC) and titania-incorporated activated carbon cloth (Ti-ACC) under an electric field were investigated to deduce the role of titania in capacitive deionization (CDI) of NaCl. Electrosorption of NaCl on the ACC was significantly increased by titania incorporation, whereas its physical adsorption was considerably decreased, resulting in an improved performance of the Ti-ACC as a CDI electrode. Langmuir isotherms based on a localized and fixed amount of adsorption were suitable for the simulation of electrosorption and physical adsorption of ions on the ACC electrodes. The variances of q(m) and b of Langmuir isotherms with electric potential indicate increases in the number of ions per adsorption site and in electrosorption strength of ions by titania incorporation. A cyclic voltammetric study for ion adsorption on ACC electrodes confirms the reversibility between electrosorption and desorption of ions, regardless of titania incorporation. PMID:16256660

  9. A voltage-activated proton current in human cardiac fibroblasts

    A voltage-activated proton current in human cardiac fibroblasts, measured using the whole-cell recording configuration of the patch-clamp technique, is reported. Increasing the pH of the bathing solution shifted the current activation threshold to more negative potentials and increased both the current amplitude and its rate of activation. Changing the pH gradient by one unit caused a 51 mV shift in the reversal potential of the current, demonstrating a high selectivity for protons of the channel carrying the current. Extracellularly applied Zn2+ reversibly inhibited the current. Activation of the current contributes to the resting membrane conductance under conditions of intracellular acidosis. It is proposed that this current in cardiac fibroblasts is involved in the regulation of the intracellular pH and the membrane potential under physiological conditions as well as in response to pathological conditions such as ischemia

  10. Steerable Capacitive Proximity Sensor

    Jenstrom, Del T.; Mcconnell, Robert L.

    1994-01-01

    Steerable capacitive proximity sensor of "capaciflector" type based partly on sensing units described in GSC-13377 and GSC-13475. Position of maximum sensitivity adjusted without moving sensor. Voltage of each driven shield adjusted separately to concentrate sensing electric field more toward one side or other.

  11. Enhancement of the carbon electrode capacitance by brominated hydroquinones

    Gastol, Dominika; Walkowiak, Jedrzej; Fic, Krzysztof; Frackowiak, Elzbieta

    2016-09-01

    This paper presents supercapacitors utilizing new redox-active electrolytes with bromine species. Two sources of Br specimen were investigated, i.e. dibromodihydroxybenzene dissolved in KOH and potassium bromide dissolved in KOH with hydroxybenzene additive. KOH-activated carbon, exhibiting a well-developed porosity, was incorporated as an electrode material. The tested systems revealed a capacitance enhancement explained by Br- and partial BrO3- redox activity. The optimisation of the electrolyte concentration resulted in a capacitance value of 314 F g-1 achieved at 1.1 V voltage range. Good cyclability performance (11% capacitance loss) combined with a high capacitance value (244 F g-1) were obtained for the system operating in 0.2 mol L- 1 C6H4Br2O2 in 2 mol L-1 KOH electrolytic solution.

  12. Improvement in capacitive deionization function of activated carbon cloth by titania modification.

    Ryoo, Min-Woong; Seo, Gon

    2003-04-01

    Activated carbon cloth (ACC) was modified by the reaction between polar groups on its surface and metal alkoxides of titanium, silicon, aluminum and zirconium to enhance its capacitive deionization (CDI) performance. Incorporated state of metals and surface property of modified ACC were deduced from surface analysis results obtained using FE-SEM, XRD, XPS and zeta-potential meter. Titania was highly dispersed on the ACC surface with tetrahedral coordination, and the incorporated titania was effective to decrease physical adsorption of NaCl and to increase electric field adsorption, resulting in a significant enhancement of CDI performance. The negligible contribution of silica, alumina and zirconia modifications suggested that the small oxidation-reduction potential of titania was responsible for the enhancement of the electric field adsorption. Reversibility of adsorption and desorption operation on titania-modified ACC were also discussed relating to its CDI function. PMID:12600380

  13. Micropower non-contact EEG electrode with active common-mode noise suppression and input capacitance cancellation.

    Chi, Yu M; Cauwenberghs, Gert

    2009-01-01

    A non-contact EEG electrode with input capacitance neutralization and common-mode noise suppression circuits is presented. The coin sized sensor capacitively couples to the scalp without direct contact to the skin. To minimize the effect of signal attenuation and channel gain mismatch, the input capacitance of each sensor is actively neutralized using positive feedback and bootstrapping. Common-mode suppression is achieved through a single conductive sheet to establish a common mode reference. Each sensor electrode provides a differential gain of 60 dB. Signals are transmitted in a digital serial daisy-chain directly from a local 16-bit ADC, minimizing the number of wires required to establish a high density EEG sensor network. The micropower electrode consumes only 600 microW from a single 3.3 V supply. PMID:19964104

  14. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang;

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  15. Capacitive desalination of ZnO/activated carbon asymmetric capacitor and mechanism analysis

    ABSTRACT: Zinc oxide/activated carbon composite electrode (ZnO/AC) was prepared by simply mixing ZnO nanoparticles with AC granules in the presence of Teflon emulsion. Scanning electron microscopy shows an even and seamless surface with effective filling of ZnO nanoparticles in between AC granules. Cyclic voltammetry and impedance analysis demonstrate the ideal double-layer capacitor behavior. The desalination behavior of the asymmetric capacitor with ZnO/AC as positive electrode and AC as negative electrode (+ZnO/AC‖AC), or ZnO/AC as negative electrode and AC as positive electrode (−ZnO/AC‖AC) was studied, respectively. As compared with pure AC‖AC capacitor, −ZnO/AC‖AC capacitor showed a very stable desalination behavior with high desalination amount of 9.4 mg/g and charge efficiency of 80.5%; while +ZnO/AC‖AC capacitor showed no obvious difference after several desalination cycles due to poor stability. The mechanism was analyzed based on zeta potential of ZnO particles and pH variation near the electrode surface during charging process. The different desalination properties on positive and negative electrodes due to zeta potential variation of ZnO with pH change at electrode surface were further confirmed by using other metal oxides like CuO, MnO2 and WO3. This study provides a particularly important guidance for screening electrode materials and optimizing operation parameters for capacitive desalination (also called capacitive deionization, CDI)

  16. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  17. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  18. Calculation Analysis on Capacitance Compensation in Low-voltage Distribution Design%低压配电设计中电容补偿容量计算分析

    蓝娟

    2012-01-01

    In capacitance compensation design for low-voltage distribution system, to suppress the switching inrush current and harmonic current in capacitor circuit, a reactor is usually connected in series in capacitor circuit; the inductive reactance of the reactor will partially offset the capacitive reactance of capacitor, which will affect the effective compensation of capacitor. Therefore, in calculation of reactive compensation capacity, correction shall be done according to operating voltage of system, reactance rate and rated voltage of capacitor.%低压配电系统电容补偿设计中.为了抑制电容器回路合闸涌流和谐波电流.通常在电容器回路中串接电抗器;串入的电抗器自身的感抗会抵消电容器的部分容抗,对电容器的有效补偿量产生影响。因而,在进行无功补偿容量的计算时,要根据系统运行电压、电抗率的选择,以及电容器额定电压进行修正计算。

  19. Employing of Minimum Active Power Injection Strategy to Compensate Voltage Sag by DVR

    A. D. Falehi

    2011-09-01

    Full Text Available In this paper, voltage sag is compensated by the DVR (Dynamic Voltage Restorer in distribution systems. This device is applied between the sensitive load and the supply in order to inject voltage in series to correct the voltage sag. Subsequently, all the other various DVR compensation techniques in the distribution system are explained. Due to the restriction of the energy storage in DVR’s capacitors, it is essential to minimize the active power injected by the DVR. Thus, a minimum active power injection method is proposed to compensate the voltage sag. Performance of this method is evaluated under balanced and unbalance voltage sag in a distribution system.

  20. Effects of pore structure on the high-performance capacitive deionization using chemically activated carbon nanofibers.

    Im, Ji Sun; Kim, Jong Gu; Lee, Young-Seak

    2014-03-01

    Capacitive deionization (CDI) electrodes were constructed from activated carbon fibers prepared using electrospinning and chemical activation. The CDI efficiencies of these electrodes were studied as a function of their specific surface areas, pore volumes and pore sizes via salt ion adsorption. The specific surface areas increased approximately 90 fold and the pore volume also increased approximately 26 fold with the use of greater amounts of the chemical activation agent. There was a relative increase in the mesopore fraction with higher porosity. A NaCI solution was passed through a prepared CDI system, and the salt removal efficiency of the CDI system was determined by the separation of the Na+ and Cl- ions toward the anode and cathode. The CDI efficiency increased with greater specific surface areas and pore volumes. In addition, the efficiency per unit pore volume increased with a reduction in the micropore fraction, resulting in the suppressed overlapping effect. In conclusion, the obtained improvements in CDI efficiency were mainly attributed to mesopores, but the micropores also played an important role in the high-performance CDI under conditions of high applied potential and high ion concentrations. PMID:24745222

  1. Capacitive Proximity Sensor Has Longer Range

    Vranish, John M.

    1992-01-01

    Capacitive proximity sensor on robot arm detects nearby object via capacitive effect of object on frequency of oscillator. Sensing element part of oscillator circuit operating at about 20 kHz. Total capacitance between sensing element and ground constitutes tuning capacitance of oscillator. Sensor circuit includes shield driven by replica of alternating voltage applied to sensing element. Driven shield concentrates sensing electrostatic field in exterior region to enhance sensitivity to object. Sensitivity and dynamic range has corresponding 12-to-1 improvement.

  2. Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

    Mohammed Soltani, Mohamed Chaker and Joelle Margot

    2011-01-01

    Negative capacitance (NC) in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz–10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance–voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced c...

  3. Active gate driver for dv/dt control and active voltage clamping in an IGBT stack

    Rasmussen, Tonny Wederberg

    2005-01-01

    For high voltages converters stacks of IGBTs can be used if the static and dynamic voltage sharing among the IGBTs can be applied. dVCE/dt should also be controlled in order not to damage insulation material. This paper describes theory and measurements of an active gate driver for stacking IGBTs....... For the measurements two series connected standard IGBTs made for hard switching applications are used. Problems are shown and proposals for improvements are given....

  4. Complementary surface charge for enhanced capacitive deionization.

    Gao, X; Porada, S; Omosebi, A; Liu, K-L; Biesheuvel, P M; Landon, J

    2016-04-01

    Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI cell to examine their salt removal at a fixed charging voltage and both reduced and opposite polarity discharge voltages, and subsequently compared to the salt removal of untreated electrodes. Substantially improved salt removal due to chemical surface charge and the use of a discharge voltage of opposite sign to the charging voltage is clearly demonstrated in these CDI cycling tests, an observation which for the first time validates both enhanced CDI and extended-voltage CDI effects predicted by the Donnan model [Biesheuvel et al., Colloids Interf. Sci. Comm., 10.1016/j.colcom.2015.12.001 (2016)]. Our experimental and theoretical results demonstrate that the use of carbon electrodes with optimized chemical surface charge can extend the CDI working voltage window through discharge voltages of opposite sign to the charging voltage, which can significantly enhance the salt adsorption capacity of CDI electrodes. Thus, in addition to carbon pore size distribution, chemical surface charge in carbon micropores is considered foundational for salt removal in CDI cells. PMID:26878361

  5. Oxygen- and nitrogen-co-doped activated carbon from waste particleboard for potential application in high-performance capacitance

    Graphical abstract: All electrodes showed excellent capacitance and retention versus discharge current density from 0.05 to 5 A/g. - Abstract: Oxygen- and nitrogen-co-doped activated carbons were obtained from phosphoric acid treated nitrogen-doped activated carbons which were prepared from waste particleboard bonded with urea-formaldehyde resin adhesives. The activated carbon samples obtained were tested as supercapacitors in two-electrode cell and extensive wetting 7 M KOH electrolytes. Their structural properties and surface chemistry, before the electrical testing, were investigated using elemental analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, Raman spectra, and adsorption of nitrogen. Activated carbon treated by 4 M phosphoric acid of the highest capacitance (235 F/g) was measured in spite of a relatively lower surface (1360 m2/g) than that of the activated carbon treated by 2 M phosphoric acid (1433 m2/g). The surface chemistry, and especially oxygen- and nitrogen-containing functional groups, was found of paramount importance for the capacitive behavior and for the effective pore space utilization by the electrolyte ions

  6. Improved capacitive deionization performance of mixed hydrophobic/hydrophilic activated carbon electrodes

    Aslan, M.; Zeiger, M.; Jäckel, N.; Grobelsek, I.; Weingarth, D.; Presser, V.

    2016-03-01

    Capacitive deionization (CDI) is a promising salt removal technology with high energy efficiency when applied to low molar concentration aqueous electrolytes. As an interfacial process, ion electrosorption during CDI operation is sensitive to the pore structure and the total pore volume of carbon electrodes limits the maximum salt adsorption capacity (SAC). Thus, activation of carbons as a widely used method to enhance the porosity of a material should also be highly attractive for improving SAC values. In our study, we use easy-to-scale and facile-to-apply CO2-activation at temperatures between 950 °C and 1020 °C to increase the porosity of commercially available activated carbon. While the pore volume and surface area can be significantly increased up to 1.51 cm3 g-1 and 2113 m2 g-1, this comes at the expense of making the carbon more hydrophobic. We present a novel strategy to capitalize on the improved pore structure by admixing as received (more hydrophilic) carbon with CO2-treated (more hydrophobic) carbon for CDI electrodes without using membranes. This translates into an enhanced charge storage ability in high and low molar concentrations (1 M and 5 mM NaCl) and significantly improved CDI performance (at 5 mM NaCl). In particular, we obtain stable CDI performance at 0.86 charge efficiency with 13.1 mg g-1 SAC for an optimized 2:1 mixture (by mass).

  7. Improved capacitive deionization performance of mixed hydrophobic/hydrophilic activated carbon electrodes

    Capacitive deionization (CDI) is a promising salt removal technology with high energy efficiency when applied to low molar concentration aqueous electrolytes. As an interfacial process, ion electrosorption during CDI operation is sensitive to the pore structure and the total pore volume of carbon electrodes limits the maximum salt adsorption capacity (SAC). Thus, activation of carbons as a widely used method to enhance the porosity of a material should also be highly attractive for improving SAC values. In our study, we use easy-to-scale and facile-to-apply CO2-activation at temperatures between 950 °C and 1020 °C to increase the porosity of commercially available activated carbon. While the pore volume and surface area can be significantly increased up to 1.51 cm3 g−1 and 2113 m2 g−1, this comes at the expense of making the carbon more hydrophobic. We present a novel strategy to capitalize on the improved pore structure by admixing as received (more hydrophilic) carbon with CO2-treated (more hydrophobic) carbon for CDI electrodes without using membranes. This translates into an enhanced charge storage ability in high and low molar concentrations (1 M and 5 mM NaCl) and significantly improved CDI performance (at 5 mM NaCl). In particular, we obtain stable CDI performance at 0.86 charge efficiency with 13.1 mg g−1 SAC for an optimized 2:1 mixture (by mass). (paper)

  8. Improved capacitive deionization performance of mixed hydrophobic/hydrophilic activated carbon electrodes.

    Aslan, M; Zeiger, M; Jäckel, N; Grobelsek, I; Weingarth, D; Presser, V

    2016-03-23

    Capacitive deionization (CDI) is a promising salt removal technology with high energy efficiency when applied to low molar concentration aqueous electrolytes. As an interfacial process, ion electrosorption during CDI operation is sensitive to the pore structure and the total pore volume of carbon electrodes limits the maximum salt adsorption capacity (SAC). Thus, activation of carbons as a widely used method to enhance the porosity of a material should also be highly attractive for improving SAC values. In our study, we use easy-to-scale and facile-to-apply CO2-activation at temperatures between 950 °C and 1020 °C to increase the porosity of commercially available activated carbon. While the pore volume and surface area can be significantly increased up to 1.51 cm(3) g(-1) and 2113 m(2) g(-1), this comes at the expense of making the carbon more hydrophobic. We present a novel strategy to capitalize on the improved pore structure by admixing as received (more hydrophilic) carbon with CO2-treated (more hydrophobic) carbon for CDI electrodes without using membranes. This translates into an enhanced charge storage ability in high and low molar concentrations (1 M and 5 mM NaCl) and significantly improved CDI performance (at 5 mM NaCl). In particular, we obtain stable CDI performance at 0.86 charge efficiency with 13.1 mg g(-1) SAC for an optimized 2:1 mixture (by mass). PMID:26902896

  9. Dielectric Electro Active Polymer Incremental Actuator Driven by Multiple High-Voltage Bi-directional DC-DC Converters

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.;

    2013-01-01

    capacitive sub-actuators. It needs to be driven by three high voltage (~2.5 kV) DC-DC converters, to achieve the linear incremental motion. The topology used for this application is a bi-directional flyback DC-DC converter. The control of the incremental actuator involves, implementation of digital...

  10. Voltage Estimation in Active Distribution Grids Using Neural Networks

    Pertl, Michael; Heussen, Kai; Gehrke, Oliver;

    2016-01-01

    observability of distribution systems has to be improved. To increase the situational awareness of the power system operator data driven methods can be employed. These methods benefit from newly available data sources such as smart meters. This paper presents a voltage estimation method based on neural networks......The power flow in distribution grids is becoming more complicated as reverse power flows and undesired voltage rises might occur under particular circumstances due to integration of renewable energy sources, increasing the occurrence of critical bus voltages. To identify these critical feeders the...

  11. Profiles for voltage-activated currents are multiphasic, not curvilinear

    Nissen, Per

    2016-01-01

    Data for voltage-activation of a potassium channel (Matulef et al. Proc Natl Acad Sci USA 110: 17886-17891. 2013) were, as conventionally done, fitted by the authors by a Boltzmann function, i.e. by a curvilinear profile. Reanalysis of the data reveals however that this interpretation must be rejected in favor of a multiphasic profile, a series of straight lines separated by discontinuous transitions, quite often in the form of noncontiguities (jumps). In contrast to the generally very poor fits to the Boltzmann profiles, the fits to multiphasic profiles are very good. (For the four replicates, the average deviations from the Boltzmann curves were 10- to 100-fold larger than the deviations from the multiphasic profiles.) The difference in the median values was statistically highly significant, P<0.001 in most cases. For the mean values the deviations from the Boltzmann curve were 20-fold larger than the deviations from the multiphasic profile, and the difference in the median values was also highly signifi...

  12. Modulation of Neuronal Voltage-Activated Calcium and Sodium Channels by Polyamines and pH

    Chen, Wenyan; Harnett, Mark T.; Smith, Stephen M.

    2007-01-01

    The endogenous polyamines spermine, spermidine and putrescine are present at high concentrations inside neurons and can be released into the extracellular space where they have been shown to modulate ion channels. Here, we have examined polyamine modulation of voltage-activated Ca2+ channels (VACCs) and voltage-activated Na+ channels (VANCs) in rat superior cervical ganglion neurons using whole-cell voltage-clamp at physiological divalent concentrations. Polyamines inhibited VACCs in a concen...

  13. Voltage Quality Enhancement and Fault Current Limiting with Z-Source based Series Active Filter

    F. Gharedaghi

    2011-11-01

    Full Text Available In this study, series active filter or dynamic voltage restorer application is proposed for reduction of downstream fault current in addition to voltage quality enhancement. Recently, the application of Z-source inverter is proposed in order to optimize DVR operation. This inverter makes DVR to operate appropriately when the energy storage device’s voltage level severely falls. Here, the Z-source inverter based DVR is proposed to compensate voltage disturbance at the PCC and to reduce the fault current in downstream of DVR. By calculating instantaneous current magnitude in synchronous frame, control system recognizes if the fault exists or not, and determines whether DVR should compensate voltage disturbance or try to reduce the fault current. The proposed system is simulated under voltage sag and swell and short circuit conditions. The simulation results show that the system operates correctly under voltage sag and short circuit conditions.

  14. Experimental determination of dielectric barrier discharge capacitance.

    Pipa, A V; Hoder, T; Koskulics, J; Schmidt, M; Brandenburg, R

    2012-07-01

    The determination of electrical parameters (such as instantaneous power, transferred charge, and gas gap voltage) in dielectric barrier discharge (DBD) reactors relies on estimates of key capacitance values. In the classic large-scale sinusoidal-voltage driven DBD, also known as silent or ozonizer discharge, capacitance values can be determined from charge-voltage (Q-V) plot, also called Lissajous figure. For miniature laboratory reactors driven by fast pulsed voltage waveforms with sub-microsecond rise time, the capacitance of the dielectric barriers cannot be evaluated from a single Q-V plot because of the limited applicability of the classical theory. Theoretical determination can be problematic due to electrode edge effects, especially in the case of asymmetrical electrodes. The lack of reliable capacitance estimates leads to a "capacitance bottleneck" that obstructs the determination of other DBD electrical parameters in fast-pulsed reactors. It is suggested to obtain capacitance of dielectric barriers from a plot of the maximal charge versus maximal voltage amplitude (Q(max) - V(max) plot) in a manner analogous to the classical approach. The method is examined using measurements of current and voltage waveforms of a coaxial DBD reactor in argon at 100 mbar driven by square voltage pulses with a rise time of 20 ns and with different voltage amplitudes up to 10 kV. Additionally, the applicability of the method has been shown for the data reported in literature measured at 1 bar of nitrogen-oxygen gas mixtures and xenon. PMID:22852728

  15. Phase-Discriminating Capacitive Sensor System

    Vranish, John M.; Rahim, Wadi

    1993-01-01

    Crosstalk eliminated by maintaining voltages on all electrodes at same amplitude, phase, and frequency. Each output feedback-derived control voltage, change of which indicates proximity-induced change in capacitance of associated sensing electrode. Sensors placed close together, enabling imaging of sort. Images and/or output voltages used to guide robots in proximity to various objects.

  16. Fast and slow activation kinetics of voltage-gated sodium channels in molluscan neurons.

    Gilly, W F; Gillette, R; McFarlane, M

    1997-05-01

    Whole cell patch-clamp recordings of Na current (I(Na)) were made under identical experimental conditions from isolated neurons from cephalopod (Loligo, Octopus) and gastropod (Aplysia, Pleurobranchaea, Doriopsilla) species to compare properties of activation gating. Voltage dependence of peak Na conductance (gNa) is very similar in all cases, but activation kinetics in the gastropod neurons studied are markedly slower. Kinetic differences are very pronounced only over the voltage range spanned by the gNa-voltage relation. At positive and negative extremes of voltage, activation and deactivation kinetics of I(Na) are practically indistinguishable in all species studied. Voltage-dependent rate constants underlying activation of the slow type of Na channel found in gastropods thus appear to be much more voltage dependent than are the equivalent rates in the universally fast type of channel that predominates in cephalopods. Voltage dependence of inactivation kinetics shows a similar pattern and is representative of activation kinetics for the two types of Na channels. Neurons with fast Na channels can thus make much more rapid adjustments in the number of open Na channels at physiologically relevant voltages than would be possible with only slow Na channels. This capability appears to be an adaptation that is highly evolved in cephalopods, which are well known for their high-speed swimming behaviors. Similarities in slow and fast Na channel subtypes in molluscan and mammalian neurons are discussed. PMID:9163364

  17. Molecular Interactions between Tarantula Toxins and Low-Voltage-Activated Calcium Channels

    Autoosa Salari; Benjamin S. Vega; Milescu, Lorin S.; Mirela Milescu

    2016-01-01

    Few gating-modifier toxins have been reported to target low-voltage-activated (LVA) calcium channels, and the structural basis of toxin sensitivity remains incompletely understood. Studies of voltage-gated potassium (Kv) channels have identified the S3b–S4 “paddle motif,” which moves at the protein-lipid interface to drive channel opening, as the target for these amphipathic neurotoxins. Voltage-gated calcium (Cav) channels contain four homologous voltage sensor domains, suggesting multiple t...

  18. Capacitor Current Feedback-Based Active Resonance Damping Strategies for Digitally-Controlled Inductive-Capacitive-Inductive-Filtered Grid-Connected Inverters

    Iman Lorzadeh

    2016-08-01

    Full Text Available Inductive-capacitive-inductive (LCL-type line filters are widely used in grid-connected voltage source inverters (VSIs, since they can provide substantially improved attenuation of switching harmonics in currents injected into the grid with lower cost, weight and power losses than their L-type counterparts. However, the inclusion of third order LCL network complicates the current control design regarding the system stability issues because of an inherent resonance peak which appears in the open-loop transfer function of the inverter control system near the control stability boundary. To avoid passive (resistive resonance damping solutions, due to their additional power losses, active damping (AD techniques are often applied with proper control algorithms in order to damp the LCL filter resonance and stabilize the system. Among these techniques, the capacitor current feedback (CCF AD has attracted considerable attention due to its effective damping performance and simple implementation. This paper thus presents a state-of-the-art review of resonance and stability characteristics of CCF-based AD approaches for a digitally-controlled LCL filter-based grid-connected inverter taking into account the effect of computation and pulse width modulation (PWM delays along with a detailed analysis on proper design and implementation.

  19. Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang;

    2015-01-01

    The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback...... overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately, as...

  20. Driven shielding capacitive proximity sensor

    Vranish, John M. (Inventor); McConnell, Robert L. (Inventor)

    2000-01-01

    A capacitive proximity sensing element, backed by a reflector driven at the same voltage as and in phase with the sensor, is used to reflect the field lines away from a grounded robot arm towards an intruding object, thus dramatically increasing the sensor's range and sensitivity.

  1. High Efficiency Interleaved Active Clamped Dc-Dc Converter with Fuel Cell for High Voltage Applications

    Sona P

    2014-02-01

    Full Text Available A high efficiency interleaved ZVS active clamped current fed dc-dc converter is proposed in this paper specially used for fuel cell applications. As the fuel cell output is very low we are in need of a step up dc-dc converter. Here a current fed dc-dc converter is used. Two current fed dc-dc converters are interleaved by connecting their inputs in parallel and outputs in series. With this proposed methodology input current ripples in the fuel cell stacks can be reduced and a regulated output voltage ripples can be obtained. The active clamping circuit used in this model absorbs the turn off voltage spikes hence low voltage devices with low on state resistance can be used.Voltage doubler circuits will give double the output voltage than normal with smaller transformer turns ratio and flexibility. The proposed method is simulated in MATLAB for verifying the accuracy of the proposed design.

  2. Enhancing the capacitances of electric double layer capacitors based on carbon nanotube electrodes by carbon dioxide activation and acid oxidization

    2010-01-01

    Polarizable electrodes of electric double layer capacitors(EDLCs) were made from carbon nanotubes(CNTs).Effect of carbon dioxide activation together with acid oxidation for the electrodes on the characteristics and performances of electrodes and EDLCs was studied.Carbon dioxide activation changed the microstructure of the electrodes,increased the effective surface area of CNTs and optimized the distribution of apertures of the electrodes.Acid oxidization modified the surface characteristics of CNTs.Based on the polarizable electrodes treated by carbon dioxide activation and acid oxidization,the performances of EDLCs were greatly enhanced.The specific capacitance of the electrodes with organic electrolyte was increased from 21.8 F/g to 60.4 F/g.

  3. 煤矿低压电网漏电容性电流自动补偿研究%Research on Capacitive Current Automatic Compensation on Low Voltage Power Grid Leakage Protection of Coal Mine

    徐国萍

    2014-01-01

    In neutral insulation low voltage power supply lines of coal mine,due to distributed capacitance exists, the leakage currents or personal electric shock currents exceed the limited safety value, and the changes of distributed capacitance easily cause the original system overcompensation or under compensation. The automatic compensation scheme of combining inductance the coarse adjustment with the fine adjustment is proposed on base of the minimum leakage currents closed loop control theory. Using single chip microcomputer control relay automatic switching magnetic amplifier is to achieve multi tap AC winding inductance step adjustment. The currents of magnetic amplifier DC winding are changed by single chip microcomputer control step motor to adjust potentiometer. The system attains stepless regulation of the inductance, so that the currents of distributed capacitance are completely compensated by the inductor currents of the magnetic amplifier. It has many advantages of fast compensation speed, high precision, short cycle, safety and easy operation during compensation process.%针对煤矿井下中性点绝缘低压供电线路中,由于电网对地分布电容的存在,使漏电电流或人身触电电流超过极限安全值,并且电网分布电容的多变容易引起原系统过补偿或欠补偿的情况,提出基于最小漏电电流闭环控制理论的电感量粗调和细调相融合的自动补偿方案,采用单片机控制继电器自动切换磁放大器多抽头交流绕组实现电感量有级调节,通过步进电机调节电位器改变磁放大器直流绕组的电流,实现电感量无级调节,从而使流过磁放大器的电感电流完全补偿电网分布电容的电流。该系统补偿速度快、精度高、调整周期短,补偿过程操作方便、安全。

  4. Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

    Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei;

    2016-01-01

    The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have...

  5. Advanced Control Strategy for Single-Phase Voltage-Source Active Rectifier with Low Harmonic Emission

    Blahník, Vojtĕch; Peroutka, Zdenĕk; Talla, Jakub

    2014-03-01

    This paper introduces the advanced control of single-phase voltage-source active rectifier. This control provide direct control of trolley-wire current and active damping of low-frequency disturbances at the converter ac side. Our proposed control strategy combines PR controller with feed-forward model and low-frequency harmonic compensator based on resonant controllers. Achieved experimental results show excellent converter behavior, where converter is fed by strongly distorted supply voltage.

  6. Parallel input parallel output high voltage bi-directional converters for driving dielectric electro active polymer actuators

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.;

    2014-01-01

    Dielectric electroactive polymer (DEAP) actuators are capacitive devices which provide mechanical motions when charged electrically. The charging characteristics of a DEAP actuator depends on its size, voltage applied to its electrodes, and its operating frequency. The main idea of this paper is to......-DC converter incorporating commercially available high voltage MOSFETs (4 kV) and high voltage diodes (5 kV). Although the average current of the aforementioned devices is limited to 300 mA and 150 mA, respectively, connecting the outputs of multiple converters in parallel can provide a scalable design. This...... enables operating the DEAP actuators in various static and dynamic applications e.g. positioning, vibration generation or damping, and pumps. The proposed idea is experimentally verified by connecting three high voltage converters in parallel to operate a single DEAP actuator. The experimental results...

  7. Capacitive Extensometer

    Perusek, Gail P. (Inventor)

    2003-01-01

    The present invention provides for measurements of the principal strain magnitudes and directions, and maximum shear strain that occurs in a porous specimen, such as plastic, ceramic or porous metal, when it is loaded (or subjected to a load). In one embodiment the invention includes a capacitive delta extensometer arranged with six sensors in a three piece configuration, with each sensor of each pair spaced apart from each other by a predetermined angle, such as 120 degrees.

  8. Magnetization-induced double-layer capacitance enhancement in active carbon/Fe3O4 nanocomposites

    Guoxiang Wang; Hongfeng Xu; Lu Lu; Hong Zhao

    2014-01-01

    The effects of magnetic fields on electrochemical processes have made a great impact on both theoretical and practical significances in im-proving capacitor performance. In this study, active carbon/Fe3O4-NPs nanocomposites (AC/Fe3O4-NPs) were synthesized using a facile hy-drothermal method and ultrasonic technique. Transmission electron micrographs (TEM) showed that Fe3O4 nanoparticles (Fe3O4-NPs) grew along the edge of AC. AC/Fe3O4-NPs nanocomposites were further used as an electrochemical electrode, and its electrochemical performance was tested under magnetization and non-magnetization conditions, respectively, in a three-electrode electrochemical device. Micro-magnetic field could improve the electric double-layer capacitance, reduce the charge transfer resistance, and enhance the discharge performance. The capacitance enhancement of magnetized electrode was increased by 33.1%at the current density of 1 A/g, and the energy density was improved to 15.97 Wh/kg, due to the addition of magnetic particles.

  9. Astaxanthin Improves Human Sperm Capacitation by Inducing Lyn Displacement and Activation.

    Andrisani, Alessandra; Donà, Gabriella; Tibaldi, Elena; Brunati, Anna Maria; Sabbadin, Chiara; Armanini, Decio; Alvisi, Gualtiero; Gizzo, Salvatore; Ambrosini, Guido; Ragazzi, Eugenio; Bordin, Luciana

    2015-09-01

    Astaxanthin (Asta), a photo-protective red pigment of the carotenoid family, is known for its multiple beneficial properties. In this study, the effects of Asta on isolated human sperm were evaluated. Capacitation involves a series of transformations to let sperm acquire the correct features for potential oocyte fertilization, including the generation of a controlled amount of reactive oxygen species (ROS), cholesterol depletion of the sperm outer membrane, and protein tyrosine phosphorylation (Tyr-P) process in the head region. Volunteers, with normal spermiogram values, were divided in two separate groups on the basis of their ability to generate the correct content of endogenous ROS. Both patient group (PG) and control group (CG) were analysed for Tyr-phosphorylation (Tyr-P) pattern and percentages of acrosome-reacted cells (ARC) and non-viable cells (NVC), in the presence or absence of Asta. In addition, the involvement of ROS on membrane reorganization and the presence of Lyn, a Src family kinase associated with lipid rafts, were investigated. Results show that Lyn is present in the membranes of human sperm, mainly confined in midpiece in resting conditions. Following capacitation, Lyn translocated to the head concomitantly with raft relocation, thus allowing the Tyr-P of head proteins. Asta succeeded to trigger Lyn translocation in PG sperm thus bypassing the impaired ROS-related mechanism for rafts and Lyn translocation. In this study, we showed an interdependence between ROS generation and lipid rafts and Lyn relocation leading the cells to undergo the successive acrosome reaction (AR). Asta, by ameliorating PG sperm functioning, may be utilised to decrease male idiopathic infertility. PMID:26308013

  10. Astaxanthin Improves Human Sperm Capacitation by Inducing Lyn Displacement and Activation

    Alessandra Andrisani

    2015-08-01

    Full Text Available Astaxanthin (Asta, a photo-protective red pigment of the carotenoid family, is known for its multiple beneficial properties. In this study, the effects of Asta on isolated human sperm were evaluated. Capacitation involves a series of transformations to let sperm acquire the correct features for potential oocyte fertilization, including the generation of a controlled amount of reactive oxygen species (ROS, cholesterol depletion of the sperm outer membrane, and protein tyrosine phosphorylation (Tyr-P process in the head region. Volunteers, with normal spermiogram values, were divided in two separate groups on the basis of their ability to generate the correct content of endogenous ROS. Both patient group (PG and control group (CG were analysed for Tyr-phosphorylation (Tyr-P pattern and percentages of acrosome-reacted cells (ARC and non-viable cells (NVC, in the presence or absence of Asta. In addition, the involvement of ROS on membrane reorganization and the presence of Lyn, a Src family kinase associated with lipid rafts, were investigated. Results show that Lyn is present in the membranes of human sperm, mainly confined in midpiece in resting conditions. Following capacitation, Lyn translocated to the head concomitantly with raft relocation, thus allowing the Tyr-P of head proteins. Asta succeeded to trigger Lyn translocation in PG sperm thus bypassing the impaired ROS-related mechanism for rafts and Lyn translocation. In this study, we showed an interdependence between ROS generation and lipid rafts and Lyn relocation leading the cells to undergo the successive acrosome reaction (AR. Asta, by ameliorating PG sperm functioning, may be utilised to decrease male idiopathic infertility.

  11. Electrical capacitance clearanceometer

    Hester, Norbert J. (Inventor); Hornbeck, Charles E. (Inventor); Young, Joseph C. (Inventor)

    1992-01-01

    A hot gas turbine engine capacitive probe clearanceometer is employed to measure the clearance gap or distance between blade tips on a rotor wheel and its confining casing under operating conditions. A braze sealed tip of the probe carries a capacitor electrode which is electrically connected to an electrical inductor within the probe which is inserted into a turbine casing to position its electrode at the inner surface of the casing. Electrical power is supplied through a voltage controlled variable frequency oscillator having a tuned circuit in which the probe is a component. The oscillator signal is modulated by a change in electrical capacitance between the probe electrode and a passing blade tip surface while an automatic feedback correction circuit corrects oscillator signal drift. A change in distance between a blade tip and the probe electrode is a change in capacitance therebetween which frequency modulates the oscillator signal. The modulated oscillator signal which is then processed through a phase detector and related circuitry to provide an electrical signal is proportional to the clearance gap.

  12. Bactericidal activity of high voltage pulsed current (HVPC in vitro

    Kramer, Axel

    2006-08-01

    Full Text Available The positive effect of electrical stimulation (ES on wound healing has been shown in vitro and in vivo. Based on increased blood flow, protein denaturation and stimulation of cellular defence, an antibacterial effect of ES is to be expected. Although the antibacterial effect of ES already has been demonstrated in vitro, little attention has been paid to the direct antibacterial effect of changing polarity of the applied current. The aim of this study was to investigate the antibacterial effect of positive and negative monophasic high voltage pulsed current (HVPV on typical gram positive and gram negative pathogens of chronic wounds.Using the WoundEL®-System, three gram negative (E. coli, P. aeruginosa, K. pneumoniae and three gram positive (S. aureus, S. epidermidis, E. faecium organisms were tested against positive and negative polarity HVPV. All tested organisms were significantly (P < 0.01 reduced by ES. The reduction differed significantly (P = 0.02 between positive and negative polarity, with the highest log10 RF achieved with positive polarity. Using positive polarity, the maximum RF was measured for Escherichia coli (median log10 RF 0.83; 25th percentile 0.59, 75th percentile 0.98, the lowest for Staphylococcus epidermidis (median log10 RF 0.20; 25th percentile 0.17, 75th percentile 0.24. Yet, there was no significant difference with positive ES against gram positive (P = 0.35 or gram negative (P = 0.71 organisms.

  13. Operation of Active Front-End Rectifier in Electric Drive under Unbalanced Voltage Supply

    Chomát, Miroslav

    Rijeka: INTECHWEB.ORG, 2011 - (Chomát, M.), s. 195-216 ISBN 978-953-307-548-8 R&D Projects: GA ČR GA102/09/1273 Institutional research plan: CEZ:AV0Z20570509 Keywords : unbalanced voltage supply * DC-link voltage pulsations * pulse-width modulation Subject RIV: JA - Electronic s ; Optoelectronics, Electrical Engineering http://www.intechopen.com/books/electric-machines- and -drives/operation-of-active-front-end-rectifier-in-electric-drive-under-unbalanced-voltage-supply

  14. Fabrication and characterization of a tethered rotational planar variable capacitance micro drive

    In this paper, we present the design, fabrication and characterization of a planar variable capacitance micro drive. The rotational micro drive is developed for high-speed applications with contactless active electrostatic micro bearings. The associated low-temperature process allows the fabrication of devices with narrow stator–rotor gaps. The drive performance is characterized by means of tethered functional prototype devices. The multicompliant devices have silicon rotors and a soft polymer suspension, which allows the validated modeling of the drive capacitance and accurate measurement of the static drive torques. The devices achieve up to 2.6 nNm static drive torque per phase at an actuation voltage of 12 V. These results demonstrate the highest torque generation of a planar variable capacitance drive at low actuation voltages. (paper)

  15. Interneuron Activity Leads to Initiation of Low-Voltage Fast-Onset Seizures

    Shiri, Zahra; Manseau, Frédéric; Lévesque, Maxime; Williams, Sylvain; Avoli, Massimo

    2016-01-01

    Seizures in temporal lobe epilepsy can be classified as hypersynchronous and low-voltage fast according to their onset patterns. Experimental evidence suggests that low-voltage fast-onset seizures mainly result from the synchronous activity of γ-aminobutyric acid–releasing cells. In this study, we tested this hypothesis using the optogenetic control of parvalbumin-positive interneurons in the entorhinal cortex, in the in vitro 4-aminopyridine model. We found that both spontaneous and optogenetically induced seizures had similar low-voltage fast-onset patterns. In addition, both types of seizures presented with higher ripple than fast ripple rates. Our data demonstrate the involvement of interneuronal networks in the initiation of low-voltage fast-onset seizures. PMID:25546300

  16. New active load voltage clamp for HF-link converters

    Ljusev, Petar; Andersen, Michael Andreas E.

    2005-01-01

    This paper proposes a new active clamp for HF-link converters, which features very high efficiency by returning the clamped energy back to the primary side through a small auxiliary converter. It also increases the reliability of HF-link converters by providing an alternative load current path...

  17. An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

    Prashad, Har

    1992-07-01

    A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

  18. Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

    Mohammed Soltani, Mohamed Chaker and Joelle Margot

    2011-01-01

    Full Text Available Negative capacitance (NC in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz–10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance–voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

  19. New active load voltage clamp for HF-link converters

    Ljusev, P.; Andersen, M.A.E.

    2005-07-01

    This paper proposes a new active clamp for HF-link converters, which features very high efficiency by returning the clamped energy back to the primary side through a small auxiliary converter. It also increases the reliability of HF-link converters by providing an alternative load current path during malfunctions of the secondary bidirectional bridge. The feasibility of the approach is shown on audio power amplifier prototype. New integrated magnetics design is presented that incorporates both the main power and auxiliary transformer on the same magnetic core. (au)

  20. Chemoselective tarantula toxins report voltage activation of wild-type ion channels in live cells.

    Tilley, Drew C; Eum, Kenneth S; Fletcher-Taylor, Sebastian; Austin, Daniel C; Dupré, Christophe; Patrón, Lilian A; Garcia, Rita L; Lam, Kit; Yarov-Yarovoy, Vladimir; Cohen, Bruce E; Sack, Jon T

    2014-11-01

    Electrically excitable cells, such as neurons, exhibit tremendous diversity in their firing patterns, a consequence of the complex collection of ion channels present in any specific cell. Although numerous methods are capable of measuring cellular electrical signals, understanding which types of ion channels give rise to these signals remains a significant challenge. Here, we describe exogenous probes which use a novel mechanism to report activity of voltage-gated channels. We have synthesized chemoselective derivatives of the tarantula toxin guangxitoxin-1E (GxTX), an inhibitory cystine knot peptide that binds selectively to Kv2-type voltage gated potassium channels. We find that voltage activation of Kv2.1 channels triggers GxTX dissociation, and thus GxTX binding dynamically marks Kv2 activation. We identify GxTX residues that can be replaced by thiol- or alkyne-bearing amino acids, without disrupting toxin folding or activity, and chemoselectively ligate fluorophores or affinity probes to these sites. We find that GxTX-fluorophore conjugates colocalize with Kv2.1 clusters in live cells and are released from channels activated by voltage stimuli. Kv2.1 activation can be detected with concentrations of probe that have a trivial impact on cellular currents. Chemoselective GxTX mutants conjugated to dendrimeric beads likewise bind live cells expressing Kv2.1, and the beads are released by channel activation. These optical sensors of conformational change are prototype probes that can indicate when ion channels contribute to electrical signaling. PMID:25331865

  1. Coupling ion-exchangers with inexpensive activated carbon fiber electrodes to enhance the performance of capacitive deionization cells for domestic wastewater desalination.

    Liang, Peng; Yuan, Lulu; Yang, Xufei; Zhou, Shaoji; Huang, Xia

    2013-05-01

    A capacitive deionization (CDI) cell was built with electrodes made of an inexpensive commercial activated carbon fiber (ACF), and then modified by incorporating ion-exchangers into the cell compartment. Three modified CDI designs were tested: MCDI - a CDI with electrodes covered by ion-exchange membranes (IEMs) of the same polarity, FCDI - a CDI with electrodes covered by ion-exchange felts (IEFs), and R-MCDI - an MCDI with cell chamber packed with ion-exchange resin (IER) granules. The cell was operated in the batch reactor mode with an initial salt concentration of 1000 mg/L NaCl, a typical level of domestic wastewater. The desalination tests involved investigations of two consecutive operation stages of CDIs: electrical adsorption (at an applied voltage of 1.2 V) and desorption [including short circuit (SC) desorption and discharge (DC) desorption]. The R-MCDI showed the highest electric adsorption as measured in the present study by desalination rate [670 ± 20 mg/(L h)] and salt removal efficiency (90 ± 1%) at 60 min, followed by the MCDI [440 ± 15 mg/(L h) and 60 ± 2%, respectively]. The superior desalination performance of the R-MCDI over other designs was also affirmed by its highest charge efficiency (110 ± 7%) and fastest desorption rates at both the SC [1960 ± 15 mg/(L·h)] and DC [3000 ± 20 mg/(L·h)] modes. The desalination rate and salt removal efficiency of the R-MCDI increased from ∼270 mg/(L h) and 83% to ∼650 mg/(L h) and 98% respectively when the applied voltage increased from 0.6 V to 1.4 V, while decreased slightly when lowering the salt water flow rate that fed into the cell. The packing of IER granules in the R-MCDI provided additional surface area for ions transfer; meanwhile, according to the results of electrochemical impedance spectroscopy (EIS) analysis, it substantially lower down the R-MCDI's ohmic resistance, resulting in improved desalination performance. PMID:23497976

  2. GABAB receptors inhibit low-voltage activated and high-voltage activated Ca(2+) channels in sensory neurons via distinct mechanisms.

    Huang, Dongyang; Huang, Sha; Peers, Chris; Du, Xiaona; Zhang, Hailin; Gamper, Nikita

    2015-09-18

    Growing evidence suggests that mammalian peripheral somatosensory neurons express functional receptors for gamma-aminobutyric acid, GABAA and GABAB. Moreover, local release of GABA by pain-sensing (nociceptive) nerve fibres has also been suggested. Yet, the functional significance of GABA receptor triggering in nociceptive neurons is not fully understood. Here we used patch-clamp recordings from small-diameter cultured DRG neurons to investigate effects of GABAB receptor agonist baclofen on voltage-gated Ca(2+) currents. We found that baclofen inhibited both low-voltage activated (LVA, T-type) and high-voltage activated (HVA) Ca(2+) currents in a proportion of DRG neurons by 22% and 32% respectively; both effects were sensitive to Gi/o inhibitor pertussis toxin. Inhibitory effect of baclofen on both current types was about twice less efficacious as compared to that of the μ-opioid receptor agonist DAMGO. Surprisingly, only HVA but not LVA current modulation by baclofen was partially prevented by G protein inhibitor GDP-β-S. In contrast, only LVA but not HVA current modulation was reversed by the application of a reducing agent dithiothreitol (DTT). Inhibition of T-type Ca(2+) current by baclofen and the recovery of such inhibition by DTT were successfully reconstituted in the expression system. Our data suggest that inhibition of LVA current in DRG neurons by baclofen is partially mediated by an unconventional signaling pathway that involves a redox mechanism. These findings reinforce the idea of targeting peripheral GABA receptors for pain relief. PMID:26239659

  3. Molecular Interactions between Tarantula Toxins and Low-Voltage-Activated Calcium Channels.

    Salari, Autoosa; Vega, Benjamin S; Milescu, Lorin S; Milescu, Mirela

    2016-01-01

    Few gating-modifier toxins have been reported to target low-voltage-activated (LVA) calcium channels, and the structural basis of toxin sensitivity remains incompletely understood. Studies of voltage-gated potassium (Kv) channels have identified the S3b-S4 "paddle motif," which moves at the protein-lipid interface to drive channel opening, as the target for these amphipathic neurotoxins. Voltage-gated calcium (Cav) channels contain four homologous voltage sensor domains, suggesting multiple toxin binding sites. We show here that the S3-S4 segments within Cav3.1 can be transplanted into Kv2.1 to examine their individual contributions to voltage sensing and pharmacology. With these results, we now have a more complete picture of the conserved nature of the paddle motif in all three major voltage-gated ion channel types (Kv, Nav, and Cav). When screened with tarantula toxins, the four paddle sequences display distinct toxin binding properties, demonstrating that gating-modifier toxins can bind to Cav channels in a domain specific fashion. Domain III was the most commonly and strongly targeted, and mutagenesis revealed an acidic residue that is important for toxin binding. We also measured the lipid partitioning strength of all toxins tested and observed a positive correlation with their inhibition of Cav3.1, suggesting a key role for membrane partitioning. PMID:27045173

  4. On the Response of Interleaved Transformer Windings to Surge Voltages

    Pedersen, A.

    1963-01-01

    The high series capacitance theory for the response of interleaved transformer windings to surge voltages is criticized from the point of view that an increased series capacitance as a result of interleaving is incompatible with the concept of a pure capacitive initial voltage distribution. A new...

  5. Regulation of KV channel voltage-dependent activation by transmembrane β subunits

    Xiaohui eSun

    2012-04-01

    Full Text Available Voltage-activated K+ (KV channels are important for shaping action potentials and maintaining resting membrane potential in excitable cells. KV channels contain a central pore-gate domain (PGD surrounded by four voltage-sensing domains (VSD. The VSDs will change conformation in response to alterations of the membrane potential thereby inducing the opening of the PGD. Many KV channels are heteromeric protein complexes containing auxiliary β subunits. These β subunits modulate channel expression and activity to increase functional diversity and render tissue specific phenotypes. This review focuses on the KV β subunits that contain transmembrane (TM segments including the KCNE family and the β subunits of large conductance, Ca2+- and voltage-activated K+ (BK channels. These TM β subunits affect the voltage-dependent activation of KV α subunits. Experimental and computational studies have described the structural location of these β subunits in the channel complexes and the biophysical effects on VSD activation, PGD opening and VSD-PGD coupling. These results reveal some common characteristics and mechanistic insights into KV channel modulation by TM β subunits.

  6. Programmable electronic synthesized capacitance

    Kleinberg, Leonard L. (Inventor)

    1987-01-01

    A predetermined and variable synthesized capacitance which may be incorporated into the resonant portion of an electronic oscillator for the purpose of tuning the oscillator comprises a programmable operational amplifier circuit. The operational amplifier circuit has its output connected to its inverting input, in a follower configuration, by a network which is low impedance at the operational frequency of the circuit. The output of the operational amplifier is also connected to the noninverting input by a capacitor. The noninverting input appears as a synthesized capacitance which may be varied with a variation in gain-bandwidth product of the operational amplifier circuit. The gain-bandwidth product may, in turn, be varied with a variation in input set current with a digital to analog converter whose output is varied with a command word. The output impedance of the circuit may also be varied by the output set current. This circuit may provide very small ranges in oscillator frequency with relatively large control voltages unaffected by noise.

  7. Combined Digital Electronic Current and Voltage Transducer

    段雄英; 邹积岩; 等

    2002-01-01

    A high-performance current and voltage measurement system has been developed in power system.The system is composed of two parts:one current measurement element and one voltage measurement element.A Rogowski coil and a capacitive voltage divider are used respectively for the line current and voltage measurements.Active electronic components are used to modulate signal,and power supply for these components is drawn from power line via an auxiliary current transformer,Measurement signal is transmitted y optical fibers,which is resistant to electromagnetic induction and noise,With careful design and the use of digital signal processing technology,the whole system can meet 0.5% accuracy for metering and provides large dynamic range coupled with good accuracy for protective relaying use.

  8. Rapid and precise measurement of flatband voltage

    Li, S. P.; Ryan, M.; Bates, E. T.

    1976-01-01

    The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

  9. Grid-Voltage-Feedforward Active Damping for Grid-Connected Inverter with LCL Filter

    Lu, Minghui; Wang, Xiongfei; Blaabjerg, Frede; Muyeen, S.M.; Al-Durra, Ahmed; Leng, Siyu

    2016-01-01

    damping resistor and a reactance paralleled with filter capacitor. The damping performance in different frequency regions are discussed through Bode diagrams. Compared to other widely used active damping strategies, no extra sensor is needed because the Point of Common Coupling (PCC) voltage is sampled...

  10. Optimum PI Controllers of Active Power Filters for Harmonic Voltage Mitigation in Multibus Industrial Power Systems

    Tlustý, J.; Valouch, Viktor

    Palma de Mallorca: EA4EPQ, 2006, s. 1-5. ISBN 84-609-6604-6. [nternational Conference on Renewable Energies and Power Quality (ICREPQ'06). Palma de Mallorca (ES), 05.04.2006-07.04.2006] Institutional research plan: CEZ:AV0Z20570509 Keywords : active power filter * industrial power system * harmonic voltage mitigation Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  11. Electrode Polarization in Glassy Electrolytes: Large Interfacial Capacitance Values and Indication for Pseudocapacitive Charge Storage

    Mariappan, C. R.; Heins, T. P.; Roling, B.

    2009-01-01

    We study the electrode polarization behaviour of different Na-Ca-phosphosilicate glasses by measuring the differential capacitance between blocking Pt electrodes. At low applied dc bias voltages, we detect a linear capacitance regime with interfacial capacitance values considerably larger than expected from double layer theories and also considerably larger than found for ionic liquids with similar ion concentrations. With increasing bias voltages, the differential capacitance of interfacial ...

  12. Extraordinary surface voltage effect in the invisibility cloak with an active device inside

    Zhang, Baile; Wu, Bae-Ian; Kong, Jin Au

    2007-01-01

    The electromagnetic field solution for a spherical invisibility cloak with an active device inside is established. It is found that extraordinary electric and magnetic surface voltages are induced at the inner boundary of a spherical cloak, which prevent electromagnetic waves from going out. The phase and handness information of polarized waves obliquely incident on such special boundaries is kept in the reflected waves. The values of the surface voltages due to an electric dipole with an arbitrary position inside the concealed region are found to be equal to the auxiliary scalar potentials, which consequently gain physical counterparts in this special case.

  13. Effect of ultrasonic treatment of activated carbon on capacitive and pseudocapacitive energy storage in electrochemical supercapacitors

    B.Ya. Venhryn; I.I. Grygorchak; Z.A. Stotsko; B.P. Bakhmatyuk; S.I. Mudry; Yu.O. Kulyk

    2013-01-01

    Purpose: Use of ultrasonic radiation for improving the properties of activated carbon was the aim of this paper. Increase of density of states at Fermi level was the main factor, responsible for working characteristics of electrochemical supercapacitors. Design/methodology/approach: Working parameters of supercapacitors on the base of activated carbon have been studied by means of precisional porometry, small angle X-ray scattering, cyclic voltamerometry, electrochemical im...

  14. Photocontrol of Voltage-Gated Ion Channel Activity by Azobenzene Trimethylammonium Bromide in Neonatal Rat Cardiomyocytes.

    Sheyda R Frolova

    Full Text Available The ability of azobenzene trimethylammonium bromide (azoTAB to sensitize cardiac tissue excitability to light was recently reported. The dark, thermally relaxed trans- isomer of azoTAB suppressed spontaneous activity and excitation propagation speed, whereas the cis- isomer had no detectable effect on the electrical properties of cardiomyocyte monolayers. As the membrane potential of cardiac cells is mainly controlled by activity of voltage-gated ion channels, this study examined whether the sensitization effect of azoTAB was exerted primarily via the modulation of voltage-gated ion channel activity. The effects of trans- and cis- isomers of azoTAB on voltage-dependent sodium (INav, calcium (ICav, and potassium (IKv currents in isolated neonatal rat cardiomyocytes were investigated using the whole-cell patch-clamp technique. The experiments showed that azoTAB modulated ion currents, causing suppression of sodium (Na+ and calcium (Ca2+ currents and potentiation of net potassium (K+ currents. This finding confirms that azoTAB-effect on cardiac tissue excitability do indeed result from modulation of voltage-gated ion channels responsible for action potential.

  15. Enhanced desalination performance of membrane capacitive deionization cells by packing the flow chamber with granular activated carbon.

    Bian, Yanhong; Yang, Xufei; Liang, Peng; Jiang, Yong; Zhang, Changyong; Huang, Xia

    2015-11-15

    A new design of membrane capacitive deionization (MCDI) cell was constructed by packing the cell's flow chamber with granular activated carbon (GAC). The GAC packed-MCDI (GAC-MCDI) delivered higher (1.2-2.5 times) desalination rates than the regular MCDI at all test NaCl concentrations (∼ 100-1000 mg/L). The greatest performance enhancement by packed GAC was observed when treating saline water with an initial NaCl concentration of 100 mg/L. Several different GAC materials were tested and they all exhibited similar enhancement effects. Comparatively, packing the MCDI's flow chamber with glass beads (GB; non-conductive) and graphite granules (GG; conductive but with lower specific surface area than GAC) resulted in inferior desalination performance. Electrochemical impedance spectroscopy (EIS) analysis showed that the GAC-MCDI had considerably smaller internal resistance than the regular MCDI (∼ 19.2 ± 1.2 Ω versus ∼ 1222 ± 15 Ω at 100 mg/L NaCl). The packed GAC also decreased the ionic resistance across the flow chamber (∼ 1.49 ± 0.05 Ω versus ∼ 1130 ± 12 Ω at 100 mg/L NaCl). The electric double layer (EDL) formed on the GAC surface was considered to store salt ions during electrosorption, and facilitate the ion transport in the flow chamber because of the higher ion conductivity in the EDLs than in the bulk solution, thereby enhancing the MCDI's desalination rate. PMID:26360230

  16. Superior decoupled control of active and reactive power for three-phase voltage source converters

    RAHBARIMAGHAM, HESAM; AMIRI, ERFAN MAALI; VAHIDI, Behrooz; GHAREHPETIAN, GEVORG BABAMALEK; Abedi, Mehrdad

    2015-01-01

    This paper presents an active-reactive power control strategy for voltage source converters (VSCs) based on derivation of the direct and quadrature components of the VSC output current. The proposed method utilizes a multivariable proportional-integral controller and provides almost completely decoupled control capability of the active and reactive power with almost full disturbance rejection due to step changes in the power exchanged between the VSC and the grid. It also imposes fast transie...

  17. False capacitance of supercapacitors

    Ragoisha, G. A.; Aniskevich, Y. M.

    2016-01-01

    Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

  18. Effect of ultrasonic treatment of activated carbon on capacitive and pseudocapacitive energy storage in electrochemical supercapacitors

    B.Ya. Venhryn

    2013-10-01

    Full Text Available Purpose: Use of ultrasonic radiation for improving the properties of activated carbon was the aim of this paper. Increase of density of states at Fermi level was the main factor, responsible for working characteristics of electrochemical supercapacitors. Design/methodology/approach: Working parameters of supercapacitors on the base of activated carbon have been studied by means of precisional porometry, small angle X-ray scattering, cyclic voltamerometry, electrochemical impedance spectroscopy and computer simulation methods. Findings: The possibility to effect the interface between activated carbon and electrolyte by means of ultrasonic treatment in cavitation and noncavitation regimes is proved. It is shown that ultrasonic treatment in noncavitation regimes causes the significant increase of density of states at Fermi level that results in better farad-volt dependences. Research limitations/implications: This research is a complete and accomplished work. Practical implications: Modification of electric double layer by meanans in ultrasonic treatment, proposed in this work, could be regarded as effective way to obtaine the advanced electrode materials in devices of energy generation and storage. Originality/value: This work is important for physics, material science and chemistry because it is related with new possibilities to change the mobility of charge carries in electric double layer by means of ultrasonic irradiation.

  19. Study of CMOS integrated signal processing circuit in capacitive sensors

    CAO Yi-jiang; YU Xiang; WANG Lei

    2007-01-01

    A CMOS integrated signal processing circuit based on capacitance resonance principle whose structure is simple in capacitive sensors is designed. The waveform of output voltage is improved by choosing bootstrap reference current mirror with initiate circuit, CMOS analogy switch and positive feedback of double-stage inverter in the circuit. Output voltage of this circuit is a symmetric square wave signal. The variation of sensitive capacitance, which is part of the capacitive sensors, can be denoted by the change of output voltage's frequency. The whole circuit is designed with 1.5 μm P-well CMOS process and simulated by PSpice software.Output frequency varies from 261.05 kHz to 47.93 kHz if capacitance varies in the range of 1PF~15PF. And the variation of frequency can be easily detected using counter or SCU.

  20. Accurate sizing of supercapacitors storage system considering its capacitance variation.

    Trieste, Sony; Bourguet, Salvy; Olivier, Jean-Christophe; Loron, Luc; Le Claire, Jean-Claude

    2011-01-01

    This paper highlights the energy errors made for the design of supercapacitors used as a main energy source. First of all, the paper presents the two definitions of capacitance of a capacitance-voltage dependent material. The number of supercapacitors is important for the application purchasing cost. That is why the paper introduces an analytical model and an electrical model along with an identification method for the capacitance variation. This variation is presented and compared to the man...

  1. Interfacial gating triad is crucial for electromechanical transduction in voltage-activated potassium channels

    Chowdhury, Sandipan; Haehnel, Benjamin M.

    2014-01-01

    Voltage-dependent potassium channels play a crucial role in electrical excitability and cellular signaling by regulating potassium ion flux across membranes. Movement of charged residues in the voltage-sensing domain leads to a series of conformational changes that culminate in channel opening in response to changes in membrane potential. However, the molecular machinery that relays these conformational changes from voltage sensor to the pore is not well understood. Here we use generalized interaction-energy analysis (GIA) to estimate the strength of site-specific interactions between amino acid residues putatively involved in the electromechanical coupling of the voltage sensor and pore in the outwardly rectifying KV channel. We identified candidate interactors at the interface between the S4–S5 linker and the pore domain using a structure-guided graph theoretical approach that revealed clusters of conserved and closely packed residues. One such cluster, located at the intracellular intersubunit interface, comprises three residues (arginine 394, glutamate 395, and tyrosine 485) that interact with each other. The calculated interaction energies were 3–5 kcal, which is especially notable given that the net free-energy change during activation of the Shaker KV channel is ∼14 kcal. We find that this triad is delicately maintained by balance of interactions that are responsible for structural integrity of the intersubunit interface while maintaining sufficient flexibility at a critical gating hinge for optimal transmission of force to the pore gate. PMID:25311635

  2. Connection of Shunt Active Power Filters in Multibus Industrial Power Systems for Harmonic Voltage Mitigation

    Tlustý, J.; Valouch, Viktor

    Zaragoza: EA4EPQ, 2005, s. 1-5. ISBN 84-609-3234-6. [International Conference on Renewable Energies and Power Quality (ICREPQ 05). Zaragoza (ES), 16.03.2005-18.03.2005] R&D Projects: GA ČR(CZ) GA102/03/1551; GA AV ČR(CZ) IAA2057301 Institutional research plan: CEZ:AV0Z20570509 Keywords : active power filter * industrial power system * harmonic voltage mitigation Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

  3. Chemoselective tarantula toxins report voltage activation of wild-type ion channels in live cells

    Tilleya, DC; Euma, KS; Fletcher-Taylor, S; Austina, DC; Dupré, C; Patrón, LA; Garcia, RL; Lam, K; Yarov-Yarovoy, V; Cohenc, BE; Sack, JT

    2014-01-01

    Electrically excitable cells, such as neurons, exhibit tremendous diversity in their firing patterns, a consequence of the complex collection of ion channels present in any specific cell. Although numerous methods are capable of measuring cellular electrical signals, understanding which types of ion channels give rise to these signals remains a significant challenge. Here, we describe exogenous probes which use a novel mechanism to report activity of voltage-gated channels. We have synthesize...

  4. DOPAMINE RECEPTOR ACTIVATION CAN REDUCE VOLTAGE-GATED Na+ CURRENT BY MODULATING BOTH ENTRY INTO AND RECOVERY FROM INACTIVATION

    Hayashida, Yuki; Ishida, Andrew T.

    2004-01-01

    We tested whether dopamine receptor activation modulates the voltage-gated Na+ current of goldfish retinal ganglion cells, using a fast voltage-clamp amplifier, perforated-patch whole-cell mode, and a physiological extracellular Na+ concentration. As found in other cells, activators of D1-type dopamine receptors and of protein kinase A reduced the amplitude of current activated by depolarizations from resting potential, without altering the current kinetics or activation range. However, D1-ty...

  5. Performance analysis of active damped small DC-link capacitor based drive for unbalanced input voltage supply

    Maheshwari, Ram Krishan; Munk-Nielsen, Stig

    A small DC-link capacitor based drive is presented in this paper. The drive shows negative impedance instability at operating points with high power load. A phase portrait is presented for input filter states which exhibit a limit cycle. When the drive is operated with unbalanced input supply...... voltages, the rectified voltage contains all even harmonics frequencies. However, it is shown that the dominant harmonic component of the DC-link voltage is decided by the limit cycle instead of the input filter resonance frequency. An active damping technique is used to stabilize the operating point. The...... responses of the DC-link voltage with and without active damping are presented. The low order harmonics components are reduced with the increase in the gain of the active damping term. The experimental results for the DC-link voltage, input phase currents, and machine phase current are presented....

  6. Real time control of an active power filter under distorted voltage condition

    Ahmed Safa

    2012-10-01

    Full Text Available

    This paper, presents three phase shunt active filter under distorted voltage condition, the active power filter control is based on the use of self-tuning filter (STF for reference current generation and on space vector PWM for generation of pulses. The dc capacitor voltage is controlled by a classical PI controller.  The diode rectifier feed RL load is taken as a nonlinear load. The self-tuning filter allows extracting directly the voltage and current fundamental components in the axis without phase locked loop (PLL under distorted voltage condition. The experiment analysis is made based on working under distorted voltage condition, and the total harmonic distortion of source current after compensation .Self tuning filter based extraction technique is good under distorted voltage conditions. The total harmonic distortion (THD of source current is fully reduced. The effectiveness of the method is theoretically studied and verified by experimentation.

  7. Comprehensive characterization of interface and oxide states in metal/oxide/semiconductor capacitors by pulsed mode capacitance and differential isothermal capacitance spectroscopy

    Muret, Pierre

    2014-01-01

    In metal/insulator/semi-conductor structures, capacitance-voltage characteristics and capacitance or voltage transients can be measured in different conditions, which are described and implemented. Each method contains information about charges which are accommodated, captured or emitted by energy levels or bands at interface and inside the oxide. Pulsed capacitance measurements and differential isothermal procedures are analysed and performed. Calibration of the energy scale from the interfa...

  8. Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons

    Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E.; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

    2016-01-01

    The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels. PMID:27164140

  9. Activity of Palythoa caribaeorum Venom on Voltage-Gated Ion Channels in Mammalian Superior Cervical Ganglion Neurons.

    Lazcano-Pérez, Fernando; Castro, Héctor; Arenas, Isabel; García, David E; González-Muñoz, Ricardo; Arreguín-Espinosa, Roberto

    2016-01-01

    The Zoanthids are an order of cnidarians whose venoms and toxins have been poorly studied. Palythoa caribaeorum is a zoanthid commonly found around the Mexican coastline. In this study, we tested the activity of P. caribaeorum venom on voltage-gated sodium channel (NaV1.7), voltage-gated calcium channel (CaV2.2), the A-type transient outward (IA) and delayed rectifier (IDR) currents of KV channels of the superior cervical ganglion (SCG) neurons of the rat. These results showed that the venom reversibly delays the inactivation process of voltage-gated sodium channels and inhibits voltage-gated calcium and potassium channels in this mammalian model. The compounds responsible for these effects seem to be low molecular weight peptides. Together, these results provide evidence for the potential use of zoanthids as a novel source of cnidarian toxins active on voltage-gated ion channels. PMID:27164140

  10. Unfolding of a Temperature-Sensitive Domain Controls Voltage-Gated Channel Activation.

    Arrigoni, Cristina; Rohaim, Ahmed; Shaya, David; Findeisen, Felix; Stein, Richard A; Nurva, Shailika Reddy; Mishra, Smriti; Mchaourab, Hassane S; Minor, Daniel L

    2016-02-25

    Voltage-gated ion channels (VGICs) are outfitted with diverse cytoplasmic domains that impact function. To examine how such elements may affect VGIC behavior, we addressed how the bacterial voltage-gated sodium channel (BacNa(V)) C-terminal cytoplasmic domain (CTD) affects function. Our studies show that the BacNa(V) CTD exerts a profound influence on gating through a temperature-dependent unfolding transition in a discrete cytoplasmic domain, the neck domain, proximal to the pore. Structural and functional studies establish that the BacNa(V) CTD comprises a bi-partite four-helix bundle that bears an unusual hydrophilic core whose integrity is central to the unfolding mechanism and that couples directly to the channel activation gate. Together, our findings define a general principle for how the widespread four-helix bundle cytoplasmic domain architecture can control VGIC responses, uncover a mechanism underlying the diverse BacNa(V) voltage dependencies, and demonstrate that a discrete domain can encode the temperature-dependent response of a channel. PMID:26919429

  11. A high frequency active voltage doubler in standard CMOS using offset-controlled comparators for inductive power transmission.

    Lee, Hyung-Min; Ghovanloo, Maysam

    2013-06-01

    In this paper, we present a fully integrated active voltage doubler in CMOS technology using offset-controlled high speed comparators for extending the range of inductive power transmission to implantable microelectronic devices (IMD) and radio-frequency identification (RFID) tags. This active voltage doubler provides considerably higher power conversion efficiency (PCE) and lower dropout voltage compared to its passive counterpart and requires lower input voltage than active rectifiers, leading to reliable and efficient operation with weakly coupled inductive links. The offset-controlled functions in the comparators compensate for turn-on and turn-off delays to not only maximize the forward charging current to the load but also minimize the back current, optimizing PCE in the high frequency (HF) band. We fabricated the active voltage doubler in a 0.5-μm 3M2P std . CMOS process, occupying 0.144 mm(2) of chip area. With 1.46 V peak AC input at 13.56 MHz, the active voltage doubler provides 2.4 V DC output across a 1 kΩ load, achieving the highest PCE = 79% ever reported at this frequency. In addition, the built-in start-up circuit ensures a reliable operation at lower voltages. PMID:23853321

  12. Correcting For Capacitance In Tests Of Solar Cells

    Mueller, Robert L.

    1995-01-01

    Modified procedure for testing solar photovoltaic cells and modified software for processing test data provide corrections for effects of cell capacitance. Procedure and software needed because (a) some photovoltaic devices (for example, silicon solar cells with back-surface field region) store minority charge carriers in cell junction and thus exhibit significant capacitance, (b) capacitance affects current-vs.-voltage (I-V) measurements made when transient load connected to cell, and (c) transient load used in unmodified version of test procedure. Corrected I-V curve obtained in test of solar cell according to modified procedure approximates true cell voltage vs. cell current more closely.

  13. Design and Development of Autonomous High Voltage Driving System for DEAP Actuator in Radiator Thermostat

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    make a high voltage capacitive load driving system to be necessary. The only energy source battery determines it needs to be an autonomous system. The detailed system specifications have been introduced and the corresponding system level design has been proposed. In addition, the detailed design......In radiator thermostat applications, DEAP (Dielectric Electro Active Polymer) actuator tends to be a good candidate to replace the conventional self-actuating or step motor based actuator due to its intrinsic advantages. The capacitive property and high voltage (HV) driving demand of DEAP actuator...... and implementation information has been provided as well, including the power and control stage inside the high voltage converter, the output voltage measurement circuit, the feedback control, etc. Finally, the experimental results have been provided to validate the capability and performance of the driving system....

  14. Design and Development of Autonomous High Voltage Driving System for DEAP Actuator in Radiator Thermostat

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    In radiator thermostat applications, DEAP (Dielectric Electro Active Polymer) actuator tends to be a good candidate to replace the conventional self-actuating or step motor based actuator due to its intrinsic advantages. The capacitive property and high voltage (HV) driving demand of DEAP actuator...... make a high voltage capacitive load driving system to be necessary. The only energy source battery determines it needs to be an autonomous system. The detailed system specifications have been introduced and the corresponding system level design has been proposed. In addition, the detailed design and...... implementation information has been provided as well, including the power and control stage inside the high voltage converter, the output voltage measurement circuit, the feedback control, etc. Finally, the experimental results have been provided to validate the capability and performance of the driving system....

  15. Cell swelling activates ATP-dependent voltage-gated chloride channels in M-1 mouse cortical collecting duct cells

    1996-01-01

    In the present study we used whole-cell patch clamp recordings to investigate swelling-activated Cl-currents (ICl-swell) in M-1 mouse cortical collecting duct (CCD) cells. Hypotonic cell swelling reversibly increased the whole-cell Cl- conductance by about 30-fold. The I-V relationship was outwardly-rectifying and ICl-swell displayed a characteristic voltage-dependence with relatively fast inactivation upon large depolarizing and slow activation upon hyperpolarizing voltage steps. Reversal po...

  16. Minimization of the transformer inter-winding parasitic capacitance for modular stacking power supply applications

    Nguyen-Duy, Khiem; Ouyang, Ziwei; Knott, Arnold;

    2014-01-01

    In an isolated power supply, the inter-winding parasitic capacitance plays a vital role in the mitigation of common mode noise currents created by fast voltage transient responses. The lower the transformer inter-winding capacitance, the more immune the power supply is to fast voltage transient...

  17. Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System

    Macucci, M.; K. Hess

    1998-01-01

    We have studied the capacitance between two parallel plates enclosing a quantum confined system and its dependence on the applied voltage. The concepts of capacitance and differential capacitance are discussed together with their applicability to systems characterized by single.electron tunneling. We determine the tunneling thresholds by means of a formalism based on the minimization of the system free energy and we retrieve, as a special case, Luryi's quantum capacitance formula. We apply ou...

  18. Mesoscopic Capacitance Oscillations

    Buttiker, Markus; Nigg, Simon

    2006-01-01

    We examine oscillations as a function of Fermi energy in the capacitance of a mesoscopic cavity connected via a single quantum channel to a metallic contact and capacitively coupled to a back gate. The oscillations depend on the distribution of single levels in the cavity, the interaction strength and the transmission probability through the quantum channel. We use a Hartree-Fock approach to exclude self-interaction. The sample specific capacitance oscillations are in marked contrast to the c...

  19. Phosphorus/sulfur Co-doped porous carbon with enhanced specific capacitance for supercapacitor and improved catalytic activity for oxygen reduction reaction

    Zhou, Yao; Ma, Ruguang; Candelaria, Stephanie L.; Wang, Jiacheng; Liu, Qian; Uchaker, Evan; Li, Pengxi; Chen, Yongfang; Cao, Guozhong

    2016-05-01

    Phosphorus (P)/sulfur (S) co-doped porous carbon derived from resorcinol and furaldehyde are synthesized through one-step sol-gel processing with the addition of phosphorus pentasulfide as P and S source followed with freeze-drying and pyrolysis in nitrogen. The P/S co-doping strategy facilitates the pore size widening both in micropore and mesopore regions, together with the positive effect on the degree of graphitization of porous carbon through elimination of amorphous carbon through the formation and evaporation of carbon disulfide. As an electrode for supercapacitor application, P/S co-doped porous carbon demonstrates 43.5% improvement on specific capacitance of the single electrode compared to pristine porous carbon in organic electrolyte at a current of 0.5 mA due to the P-induced pseudocapacitive reactions. As for electrocatalytic use, promoted electrocatalytic activity and high resistance to crossover effects of oxygen reduction reaction (ORR) in alkaline media are observed after the introduction of P and S into porous carbon. After air activation, the specific capacitance of the single electrode of sample PS-pC reaches up to 103.5 F g-1 and an improved oxygen reduction current density.

  1. The effect of ultrasonic and HNO3 treatment of activated carbon from fruit stones on capacitive and pseudocapacitive energy storage in electrochemical supercapacitors.

    Venhryn, B Ya; Stotsko, Z A; Grygorchak, I I; Bakhmatyuk, B P; Mudry, S I

    2013-09-01

    The effect of ultrasonic treatment and modification with nitric acid of activated carbon obtained from fruit stones, on the parameters of electric double-layer (EDL) as well as on farad-volt characteristics of its boundary with electrolyte 7.6 m KОН, 4 m KI and 2 m ZnI2 aqueous solutions has been studied by means of precision porometry, cyclic voltamperometry, electrochemical impedance spectroscopy and computer simulation methods. It is shown that HNO3 treatment results in an increase of the electrostatic capacitance up to 202 F/g in 7.6 m KОН-solution as well as pseudocapacitance up to 1250 F/g in 4 m KI. This increase is supposed to be related both with hydrophilicity and with an increase of the density of states on Fermi level. The ultrasonic treatment enables one to significantly increase (more than 200 times) the density of states on Fermi level which in turn causes both quantitative and qualitative changes in farad-volt dependences. A hybrid supercapacitor with specific capacitance of 1100 F/g and specific energy of 49 Wh/kg per active mass of two electrodes was developed. PMID:23541908

  2. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Grigorash O. V.; Bogatyrev N. I.; Hitskova A. O.

    2015-01-01

    A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the m...

  3. High voltage pulse conditioning

    Springfield, Ray M.; Wheat, Jr., Robert M.

    1990-01-01

    Apparatus for conditioning high voltage pulses from particle accelerators in order to shorten the rise times of the pulses. Flashover switches in the cathode stalk of the transmission line hold off conduction for a determinable period of time, reflecting the early portion of the pulses. Diodes upstream of the switches divert energy into the magnetic and electrostatic storage of the capacitance and inductance inherent to the transmission line until the switches close.

  4. Voltage-gated Na+ Channel Activity Increases Colon Cancer Transcriptional Activity and Invasion Via Persistent MAPK Signaling

    House, Carrie D.; Wang, Bi-Dar; Ceniccola, Kristin; Williams, Russell; Simaan, May; Olender, Jacqueline; Patel, Vyomesh; Baptista-Hon, Daniel T.; Annunziata, Christina M.; Silvio Gutkind, J.; Hales, Tim G.; Lee, Norman H.

    2015-06-01

    Functional expression of voltage-gated Na+ channels (VGSCs) has been demonstrated in multiple cancer cell types where channel activity induces invasive activity. The signaling mechanisms by which VGSCs promote oncogenesis remain poorly understood. We explored the signal transduction process critical to VGSC-mediated invasion on the basis of reports linking channel activity to gene expression changes in excitable cells. Coincidentally, many genes transcriptionally regulated by the SCN5A isoform in colon cancer have an over-representation of cis-acting sites for transcription factors phosphorylated by ERK1/2 MAPK. We hypothesized that VGSC activity promotes MAPK activation to induce transcriptional changes in invasion-related genes. Using pharmacological inhibitors/activators and siRNA-mediated gene knockdowns, we correlated channel activity with Rap1-dependent persistent MAPK activation in the SW620 human colon cancer cell line. We further demonstrated that VGSC activity induces downstream changes in invasion-related gene expression via a PKA/ERK/c-JUN/ELK-1/ETS-1 transcriptional pathway. This is the first study illustrating a molecular mechanism linking functional activity of VGSCs to transcriptional activation of invasion-related genes.

  5. N-cadherin modulates voltage activated calcium influx via RhoA, p120-catenin, and myosinactin interaction

    Marrs, Glen S.; Theisen, Christopher S.; Brusés, Juan L.

    2008-01-01

    N-cadherin is a transmembrane adhesion receptor that contributes to neuronal development and synapse formation through homophilic interactions that provide structural-adhesive support to contacts between cell membranes. In addition, N-cadherin homotypic binding may initiate cell signaling that regulates neuronal physiology. In this study, we investigated signaling capabilities of N-cadherin that control voltage activated calcium influx. Using whole-cell voltage clamp recording of isolated inw...

  6. Complementary surface charge for enhanced capacitive deionization

    Gao, X.; Porada, S.; Omosebi, A.; Liu, K.L.; Biesheuvel, P.M.; Landon, J.

    2016-01-01

    Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI cel

  7. Effect of New O-Superfamily Conotoxin on Voltage-Activated Currents of Hippocampal Neurons

    李湛; 何湘平; 戴秋云; 黄培堂; 谢佐平

    2004-01-01

    The effects of a new O-superfamily conotoxin, SO3, on sodium current (/Na), transient A-type potassium currents (/A), and delayed rectified potassium currents (/K), were examined in cultured rat hippocampal neurons using the whole-cell patch clamp technique. Addition of SO3 caused a concentration-dependent,rapidly developing, and reversible inhibition of voltage-activated currents. The IC50 values for the blockage of /Na, /A, and /K were calculated as 0.49, 33.9, and 7.6 μmol/L, respectively. The determined Hill coefficients were 1.7, 0.6, and 1.2, respectively. These results indicate that SO3 can selectively inhibit neuronal sodium and potassium currents.

  8. Variable Synthetic Capacitance

    Kleinberg, L. L.

    1986-01-01

    Feedback amplifier circuit synthesizes electronically variable capacitance. Variable Synthetic Capacitor is amplifier circuit with follower/feedback configuration. Effective input capacitance depends on input set current. If synthetic capacitor is connected across resonant element of oscillator, oscillator frequency controlled via input set current. Circuit especially suitable for fine frequency adjustments of piezoelectric-crystal or inductor/capacitor resonant oscillators.

  9. Resonant-inductor-voltage feedback active damping based control for grid-connected inverters with LLCL-filters

    Huang, Min; Wang, Xiongfei; Loh, Poh Chiang;

    2014-01-01

    LLCL-filter is recently emerging into grid-connected inverters due to its high attenuation of high-frequency harmonics with a smaller size. Active damping methods have been proposed to reduce the resonance peak caused by the LLCL-filter to stabilize the whole system without extra losses. The active......-phase grid-connected voltage source inverter (VSI). The design method is described through the analysis in the s-domain and the z-domain. Then the robustness and harmonic rejection of the grid voltage with the active damping method is analyzed considering the processing delay. Finally, the performance of the...

  10. 高速铁路全电缆电力贯通线的电容电流及其容性无功补偿分析%Analysis of Capacitive Current and Capacitive Reactive Compensation in the Medium-voltage of All-cable Through Line on High-speed Railway

    张凉永

    2015-01-01

    Though the reliability of power supply system with all-cable through line is improved greatly, a series of prob-lems occur, such as terminal overvoltage, increasing of capacitive reactive power, lower system efficiency, switching ov-ervoltage and arc overvoltage under single-phase grounding fault due to excessive capacitive current in the power supply system of high-speed railway. According to common configuration of power through line on high-speed railway, an analy-sis is made on distribution and parameter level of capacitive current of cable line under normal working conditions and single-phase grounding fault. The theoretical analysis and comparison are made on horizontal difference of capacitive cur-rent between single-core cable and three-core cable, through analysis and comparison, it is concluded that single-core cable is more reliable than three-core cable. Suggestions are given for calculation of reactor compensating capacity, veri-fication of compensated capacitive current and selection of neutral point grounding mode in the engineering design.%在高速铁路电力供配电系统中,采用全电缆贯通线方案供电系统可靠性得以大幅提高的同时,电容电流过大会带来末端电压超标、容性无功增加、系统效率降低、操作过电压、单相接地故障下的电弧过电压等一系列问题。文章针对高速铁路电力贯通线的常见配置,在正常运行和单项接地故障情况下,对电缆线路电容电流分布及其参数水平予以分析。并通过对单芯电缆和三芯电缆方案的电容电流水平差异进行理论分析和比较,得出全线路单芯电缆敷设方案在可靠性上具备明显优势的结论。并提出了在工程设计中的电抗器补偿容量计算、补偿后电容电流的校验以及供配电系统中性点接地方式选择的建议。