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Sample records for acid etched microtexture

  1. Mandrels For Microtextured Small-Vessel Implants

    Deininger, William D.; Gabriel, Stephen B.

    1989-01-01

    Research shows artificial blood-vessel and heart-valve implants made more compatible with their biological environments by use of regularly microtextured surfaces. In new manufacturing process, ion beam etches patterned array of small pillars on mandrel used to mold tubular plastic implant. Pillars create tiny regularly spaced holes in inner surface of tube. Holes expected to provide sites for attachment of healthy lining. Polytetrafluoroethylene (PTFE) used as mandrel material because it can be etched by ion beam.

  2. Human Mesenchymal Stem Cell Morphology and Migration on Microtextured Titanium

    Banik, Brittany L.; Riley, Thomas R.; Platt, Christina J.; Brown, Justin L.

    2016-01-01

    The implant used in spinal fusion procedures is an essential component to achieving successful arthrodesis. At the cellular level, the implant impacts healing and fusion through a series of steps: first, mesenchymal stem cells (MSCs) need to adhere and proliferate to cover the implant; second, the MSCs must differentiate into osteoblasts; third, the osteoid matrix produced by the osteoblasts needs to generate new bone tissue, thoroughly integrating the implant with the vertebrate above and below. Previous research has demonstrated that microtextured titanium is advantageous over smooth titanium and PEEK implants for both promoting osteogenic differentiation and integrating with host bone tissue; however, no investigation to date has examined the early morphology and migration of MSCs on these surfaces. This study details cell spreading and morphology changes over 24 h, rate and directionality of migration 6–18 h post-seeding, differentiation markers at 10 days, and the long-term morphology of MSCs at 7 days, on microtextured, acid-etched titanium (endoskeleton), smooth titanium, and smooth PEEK surfaces. The results demonstrate that in all metrics, the two titanium surfaces outperformed the PEEK surface. Furthermore, the rough acid-etched titanium surface presented the most favorable overall results, demonstrating the random migration needed to efficiently cover a surface in addition to morphologies consistent with osteoblasts and preosteoblasts.

  3. Acid-catalyzed kinetics of indium tin oxide etching

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species

  4. Influence of previous acid etching on interface morphology and bond strength of self-etching adhesive to cavosurface enamel

    Lima, Adriano Fonseca; da Silva, Vinícius Brito; Soares, Giulliana Panfiglio; Marchi, Giselle Maria; Baggio Aguiar, Flávio Henrique; Lovadino, José Roberto

    2012-01-01

    Objectives: The aim of this study was to evaluate the (1) bond strength of a etch-and-rinse and self-etching adhesive systems to cavosurface enamel, (2) influence of the previous acid etching with phosphoric acid 35% to the self-etching adhesive application on bond strength values, and (3) analysis of the cavosurface enamel morphology submitted to different types of conditioning, with the use of a scanning electronic microscope (SEM). Methods: Twenty four human third molars were sectioned on ...

  5. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  6. In Vitro Evaluation of Microleakage Around Orthodontic Brackets Using Laser Etching and Acid Etching Methods

    Toodehzaeim, Mohammad Hossein; Yassaei, Sogra; Karandish, Maryam; Farzaneh, Sedigeh

    2014-01-01

    Objective: path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques. Materials and Method: The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1), laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2), and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3). After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test. Results: For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups. Conclusion: According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding. PMID:25628661

  7. In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

    Mohammad Hossein Toodehzaeim

    2014-06-01

    Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

  8. SEM ANALYSIS OF THE ACID-ETCHED ENAMEL PATTERNS PROMOTED BY ACIDIC MONOMERS AND PHOSPHORIC ACIDS

    Mirela Sanae Shinohara; Marcelo Tavares de Oliveira; Vinícius Di Hipólito; Marcelo Giannini; Mario Fernando de Goes

    2006-01-01

    ABSTRACT OBJECTIVE: Although self-etching bonding systems (SES) are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP) of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA) on intact (IN) and ground (GR) enamel surface. MATERIALS AND METHODS: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragmen...

  9. STUDY ON THE EFFECTS OF ACID ETCHING ON AFFECTED ENAMEL

    Simona Stoleriu

    2011-12-01

    Full Text Available The purpose of the study was to establish and compare the effects of ortophosphoric and hydrochloric acids on the enamel affected by incipient carious lesions with different evolution. Materials and method. 20 teeth with acute and chronic non-cavitary carious lesions were considered for the study. The teeth were sectioned in two halves through the middle of the non-cavitary lesions. The halves of 5 white spot-type lesions and of 5 brown spot-type ones were analyzed as to their surface roughness, on an atomic force microscope (AFM. 5 halves with white spot-type lesions and 5 halves with brown spot-type ones were subjected to acid etching with 37% ortophosphoric acid (Scotchbond etchant gel, 3M ESPE, and an equal number of samples was subjected to the action of 15% hydrochloric acid (ICON-etch, DMG Dental Products Ltd for 2 min, then washed with water and analyzed by AFM. Results. The initial surface roughness of the enamel was higher in the white spot–type carious lesions, comparatively with the brown spot-type ones. For both types of carious non-cavitary lesions, acid etching with phosphoric and hydrochloric acid significantly increased the surface roughness of the enamel, comparatively with the status of the enamel surface prior to etching. The hydrochloric acid led to a surface roughness significantly higher than in the case of ortophosphoric acid, in both acute and chronic non-cavitary carious lesions. The roughness values obtained through etching with ortophosphoric and hydrochloric acid were higher in the white spot-type carious lesions, comparatively with the brown spot-type ones. Conclusions. Both the 37% ortophosphoric acid and the 15% hydrochloric acid determined a significantly higher surface roughness of the enamel affected by acute and chronic non-cavitary carious lesions. The surface condition of the brown spot-type carious lesions was less significantly modified, comparatively with that of the white spot-type lesions, by the

  10. Dental enamel roughness with different acid etching times: Atomic force microscopy study

    Bruno Bochnia Cerci; Lucimara Stolz Roman; Odilon Guariza-Filho; Elisa Souza Camargo; Orlando Motohiro Tanaka

    2012-01-01

    Objective: An important characteristic of human dental enamel not yet studied in detail is its surface roughness in mesoscopic scale. This study evaluated quantitatively and qualitatively the surface topography of acid etched enamel with different etching times. Materials and Methods: Ninety-six human maxillary bicuspids were randomly distributed into three groups (n=32): T0 (control), pumiced; T15, 35% phosphoric acid etched enamel for 15 s; T30, 35% phosphoric acid etched enamel for 30 s. R...

  11. A four-year clinical evaluation of acid etched bridges

    Thirty six (36) three unit acid etched bridges (20 posterior and 16 anterior) were clinically evaluated in relation to retention, cracking in the porcelain and caries status of the abutment teeth. The results showed that after 4 years 26 bridges (72.2 %) were successfully retained, one porcalin facing had fractured and none of the abutments showed evidence of caries during the period of the study. (author)

  12. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  13. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    Alavi, Shiva; Birang, Reza; Hajizadeh, Fatemeh

    2014-01-01

    Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS) and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG) laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under ×10 magnification and adhesive remnant index (ARI) score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa) was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa) (P = 0.41). There was no significant difference in the ARI scores between two groups (P = 0.08). However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching. PMID:25097641

  14. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    Shiva Alavi

    2014-01-01

    Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

  15. Focused electron beam induced etching of copper in sulfuric acid solutions

    Boehme, Lindsay; Bresin, Matthew; Botman, Aurélien; Ranney, James; Hastings, J. Todd

    2015-12-01

    We show here that copper can be locally etched by an electron-beam induced reaction in a liquid. Aqueous sulfuric acid (H2SO4) is utilized as the etchant and all experiments are conducted in an environmental scanning electron microscope. The extent of etch increases with liquid thickness and dose, and etch resolution improves with H2SO4 concentration. This approach shows the feasibility of liquid phase etching for material selectivity and has the potential for circuit editing.

  16. Mechanical Properties of Thermoplastic Polyurethanes Laminated Glass Treated by Acid Etching Combined with Cold Plasma

    To overcome the problem of interlaminar delamination of thermoplastic polyurethane laminated glass, silicate glass was etched with hydrofluoric acid and thermoplastic polyurethane was then treated with cold plasma. Compared with the untreated samples, the interlaminar shear strength of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 97%, 84% and 341%, respectively. Acid etching combined with cold plasma-treated samples exhibited a higher flexural strength and strain as compared with the untreated samples. The impact energy of acid etching samples, cold plasma-treated samples and acid etching combined with cold plasma-treated samples increased by 8.7%, 8.1% and 11.6%, respectively, in comparison with the untreated samples. FT-IR analysis showed that a large number of –C=O, –CO–N and –CO–O–C– groups appeared on the surface of cold plasma-treated thermoplastic polyurethane, which resulted in the formation of hydrogen bonds. SEM results showed that some pittings formed on the surface of the silicate glass treated by acid etching, which resulted in the formation of a three-dimensional interface structure between the silicate glass and polyurethane. Hydrogen bonds combined with the three-dimensional interface between silicate glass and polyurethanes co-improved the mechanical properties of thermoplastic polyurethanes laminated glass. (plasma technology)

  17. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    Cheong, Youjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Choi, Samjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Department of Orthodontics, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Kim, So Jung [Department of Pediatric Dentistry, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Park, Hun-Kuk, E-mail: sigmoidus@khu.ac.kr [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Program of Medical Engineering, Kyung Hee University, Seoul (Korea, Republic of)

    2012-07-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: Black-Right-Pointing-Pointer APF pre-treatment led to decreased surface roughness in the enamel. Black-Right-Pointing-Pointer After APF treatment, the more roughness increased with increasing time elapsed. Black-Right-Pointing-Pointer Acid-etching should be performed two weeks after fluoride application.

  18. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: ► APF pre-treatment led to decreased surface roughness in the enamel. ► After APF treatment, the more roughness increased with increasing time elapsed. ► Acid-etching should be performed two weeks after fluoride application.

  19. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants

    Mortensen, Mikkel Saksø; Jakobsen, Stig Storgaard; Saksø, Henrik;

    2012-01-01

    compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri......-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner....

  20. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    Costescu, Ruxandra M.; Deneke, Christoph; Thurmer, Dominic J.; Schmidt, Oliver G.

    2009-12-01

    The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  1. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

    Costescu Ruxandra

    2009-01-01

    Full Text Available Abstract The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  2. Behavior of acid etching on titanium: topography, hydrophility and hydrogen concentration

    Since acid etching is easily controlled and effective, it has become one of the most common methods of surface modification. However, the behavior of etching is seldom discussed. In this study, different surfaces of titanium were prepared by changing the etching temperature and time. Surface topography, roughness, contact angles, surface crystalline structure, hydrogen concentration and mechanical properties were observed. As a result, surface topography and roughness were more proportional to etching temperature; however, diffusion of hydrogen and tensile strength are more time-related to titanium hydride formation on the surface. Titanium becomes more hydrophilic after etching even though the micropits were not formed after etching. More and deeper cracks were found on the specimens with more hydrogen diffusion. Therefore, higher temperature and shorter time are an effective way to get a uniform surface and decrease the diffusion of hydrogen to prevent hydrogen embrittlement. (paper)

  3. Formation of lateral homogeneous stain etched porous silicon with acetic acid at oxidant insufficiency

    Full text : The influence of acetic acid on the process of stain etched porous silicon formation on the restricted surface area in etching solution HF/HNO3/CH3COOH at oxidant insufficiency have been investigated. It is shown, that with increasing of acetic acid concentration the incubation time increases, the rate of reaction falls, the evolution of bubbles decreases and the lateral homogeneity of stain etched porous silicon improves. It is found, that the process of stain etched porous silicon formation is accompanied with the evolution of two types of bubbles, which differ in their sizes, surface distribution and ability to stick to surface. The optimal concentration of etching solution, in which reaction occurs without bubbles evolution, is determined and very homogeneous, uniformly coloured specular porous silicon layers are obtained. In spite of the fact that the etching was performed on the restricted area of wafers surface the influence of boundaries did not occur and the pore formation process has a very good repeatability and reproducibility. It is shown that in this etchant composition the porous silicon formation does not depend on of etching solution. It is also shown, that the method of final treatment of the wafers surface before etching without changing the pore formation rate essentially affects the incubation time. The investigations of photoluminescence emission and excitation spectra showed that in spite of independence of photoluminescence maximum position, optical bandgap of porous silicon decreases with increasing etching time

  4. A Comparison of Shear Bond Strengths of Metal and Ceramic Brackets using Conventional Acid Etching Technique and Er:YAG Laser Etching

    Yassaei, Sogra; Fekrazad, Reza; Shahraki, Neda; Goldani Moghadam, Mahdjoube

    2014-01-01

    Background and aims. The aim of this study was to compare shear bond strength (SBS) of metal and ceramic brackets bonded to enamel using acid versus Er:YAG laser etching. Materials and methods. Eighty premolars were divided into 4 groups: AM (acid etching/ metal brackets), AC (acid etching/ ceramic brackets), LM (laser etching/ metal brackets) and LC (laser etching/ ceramic brackets). Enamel condition-ing was done using acid in AC and AM and Er:YAG laser in LC and LM. Brackets were debonded with a Dartec machine and the SBSs were determined. Adhesive remnant index was evaluated under a stereomicroscope. Two additional teeth were conditioned with acid and laser for scanning electron microscopy examination. Comparisons of SBS value were done by ANOVA test. Results. statistical analyses showed that SBSs of acid groups were significantly higher than that of laser groups, but dif-ferences between SBS values of AC/ AM and LC/LM were not significant. SEM examination revealed different etching pattern. Conclusion. Low power Er:YAG laser etching offers clinically acceptable SBS which besides its other superiorities to acid etching can be an appropriate alternative for bonding of ceramic brackets. PMID:25024836

  5. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

  6. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.050.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  7. Creation of hollow SAPO-34 single crystals via alkaline or acid etching.

    Qiao, Yuyan; Yang, Miao; Gao, Beibei; Wang, Linying; Tian, Peng; Xu, Shutao; Liu, Zhongmin

    2016-04-14

    Hollow SAPO-34 crystals are created via selective etching of their precursor under controlled alkaline or acid conditions. The abundant/interconnected Si-O-Al domains and Si-O-Si networks at the outer layer of SAPO-34 crystals are revealed to be decisive factors for the base and acid treatments respectively to achieve a well-preserved hollow structure. PMID:27042708

  8. Grafting of acrylic acid on etched latent tracks induced by swift heavy ions on polypropylene films

    In order to continue with a systematic study that include different polymers and monomers, the residual active sites produced by heavy ion beams, that remain after the etching process, were used to start the grafting process. To produce tracks, foils of polypropylene (PP) were irradiated with 208Pb of 25.62 MeV/n. Then, these were etched and grafted with acrylic acid (AA) monomers. Experimental curves of grafting yield as a function of grafting time with the etching time as a parameter were measured. Also, the grating yield as a function of the fluence and etching time was obtained. In addition, the permeation of solutions, with different pH, through PP grafted foils was measured

  9. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants.

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation.The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time.Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

  10. The initial behaviour of freshly etched copper in modertely acid, aerated chloride solutions

    Bech-Nielsen, Gregers; Jaskula, M.; Chorkendorff, Ib;

    2002-01-01

    When freshly etched samples of various types of copper were exposed in moderately acid, aerated chloride solutions, two phenomena were observed. First the corrosion potential and the pH of the solution decreased over a shorter time, then the potential increased over a long period (600-1500 min...

  11. Improved Resin–Zirconia Bonding by Room Temperature Hydrofluoric Acid Etching

    Mun-Hwan Lee; Jun Sik Son; Kyo-Han Kim; Tae-Yub Kwon

    2015-01-01

    This in vitro study was conducted to evaluate the shear bond strength of “non-self-adhesive” resin to dental zirconia etched with hydrofluoric acid (HF) at room temperature and to compare it to that of air-abraded zirconia. Sintered zirconia plates were air-abraded (control) or etched with 10%, 20%, or 30% HF for either 5 or 30 min. After cleaning, the surfaces were characterized using various analytical techniques. Three resin cylinders (Duo-Link) were bonded to each treated plate. All bond...

  12. Influence of external magnetic field on the etching of a steel ball in an aqueous solution of nitric acid

    The effect of change of shape of a steel ball was revealed as a result of its etching in an aqueous solution of nitric acid under influence of an external magnetic field. The elongation of a ferromagnetic ball was observed along the direction of an external magnetic field while etching took place uniformly in all the directions without magnetic field application. The steel ball etching in a magnetic field is characterized by formation of three cylindrically symmetric regions with different etching rates and surface structures, divided from each other by clear borders (namely, the pole, equator and transition regions are formed). The non-monotone dependences of etching rate, surface structure of a sample and sample shape after etching on an external magnetic field are observed.

  13. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy ...

  14. Improved Resin–Zirconia Bonding by Room Temperature Hydrofluoric Acid Etching

    Mun-Hwan Lee

    2015-03-01

    Full Text Available This in vitro study was conducted to evaluate the shear bond strength of “non-self-adhesive” resin to dental zirconia etched with hydrofluoric acid (HF at room temperature and to compare it to that of air-abraded zirconia. Sintered zirconia plates were air-abraded (control or etched with 10%, 20%, or 30% HF for either 5 or 30 min. After cleaning, the surfaces were characterized using various analytical techniques. Three resin cylinders (Duo-Link were bonded to each treated plate. All bonded specimens were stored in water at 37 °C for 24 h, and then half of them were additionally thermocycled 5000 times prior to the shear bond-strength tests (n = 12. The formation of micro- and nano-porosities on the etched surfaces increased with increasing concentration and application time of the HF solution. The surface wettability of zirconia also increased with increasing surface roughness. Higher concentrations and longer application times of the HF solution produced higher bond-strength values. Infiltration of the resin into the micro- and nano-porosities was observed by scanning electron microscopy. This in vitro study suggests that HF slowly etches zirconia ceramic surfaces at room temperature, thereby improving the resin–zirconia bond strength by the formation of retentive sites.

  15. Acid etching does not improve CoCrMo implant osseointegration in a canine implant model.

    Jakobsen, Stig S; Baas, Jorgen; Jakobsen, Thomas; Soballe, Kjeld

    2010-01-01

    Induction of bone ingrowth by topographical changes to implant surfaces is an attractive concept. Topographical modifications achieved by acid etching are potentially applicable to complex 3D surfaces. Using clinically relevant implant models, we explored the effect of wet etching porous bead-coated CoCrMo. The study was designed as two paired animal experiments with 10 dogs. Each dog received four implants; one in each medial femoral condyle (loaded 0.75-mm-gap model) and one in each proximal tibia (press-fit). The implants were observed for 6 weeks and were evaluated by biomechanical pushout tests and histomorphometry. We found that wet etching porous bead-coated CoCrMo implants failed to improve implant performance. Moreover, a tendency towards increased fibrous tissue formation, decreased new bone formation, and decreased mechanical fixation was observed. Surface topography on implants is able to stimulate bone-forming cells, but the clinical performance of an implant surface perhaps relies more on 3D geometrical structure and biocompatibility. Caution should be exercised regarding the results of wet etching of porous bead-coated CoCrMo and there is a need for more preclinical trials. PMID:20544657

  16. Torque Analysis of a Triple Acid-Etched Titanium Implant Surface

    Ana Emília Farias Pontes

    2015-01-01

    Full Text Available The present study aimed to evaluate the removal torque of titanium implants treated with triple acid etching. Twenty-one rats were used in this study. For all animals, the tibia was prepared with a 2 mm drill, and a titanium implant (2 × 4 mm was inserted after treatment using the subtraction method of triple acid etching. The flaps were sutured. Seven animals were killed 14, 28, and 63 days after implant installation, and the load necessary for removing the implant from the bone was evaluated by using a torque meter. The torque values were as follows: 3.3 ± 1.7 Ncm (14 days, 2.2 ± 1.3 Ncm (28 days, and 6.7 ± 1.4 Ncm (63 days. The torque value at the final healing period (63 days was statistically significantly different from that at other time points tested (ANOVA, p=0.0002. This preliminary study revealed that treatment with triple acid etching can create a promising and efficient surface for the process of osseointegration.

  17. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    Upendra A Hoshing

    2014-01-01

    Full Text Available Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B. In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M. In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa was significantly higher (P < 0.01 than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa. Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching.

  18. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    Ana Flávia Soares

    2016-02-01

    Full Text Available ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10, each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL or diode laser/violet LED (VHL (experimental: Control (C; 35% Total Blanc Office (TBO35HL; 35% Lase Peroxide Sensy (LPS35HL; 25% Lase Peroxide Sensy II (LPS25HL; 15% Lase Peroxide Lite (LPL15HL; and 10% hydrogen peroxide (experimental (EXP10VHL. pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm. ANOVA and Tukey´s tests were applied (α=0.05. Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups.

  19. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  20. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel.

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-02-01

    Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  1. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    Ravikumar Ramakrishnaiah

    2016-05-01

    Full Text Available The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™; the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching and four experimental groups (20, 40, 80 and 160 s of etching. The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  2. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  3. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  4. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157o. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159o by coating PP-g-MAH, while the CA was only 141o by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro–nano concave–convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro–nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  5. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    Liu, Wenyong, E-mail: lwy@iccas.ac.cn [Key Laboratory of Advanced Materials and Technology for Packaging, Hunan University of Technology, Zhuzhou 412007 (China); College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Sun, Linyu; Luo, Yuting [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Wu, Ruomei, E-mail: cailiaodian2004@126.com [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Jiang, Haiyun [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Chen, Yi; Zeng, Guangsheng; Liu, Yuejun [Key Laboratory of Advanced Materials and Technology for Packaging, Hunan University of Technology, Zhuzhou 412007 (China); College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China)

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157{sup o}. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159{sup o} by coating PP-g-MAH, while the CA was only 141{sup o} by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro–nano concave–convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro–nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  6. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  7. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    Mu-Hyon Kim; Kyeongsoon Park; Kyung-Hee Choi; Soo-Hong Kim; Se Eun Kim; Chang-Mo Jeong; Jung-Bo Huh

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adh...

  8. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  9. Hydrogen content in titanium and a titanium–zirconium alloy after acid etching

    Frank, Matthias J.; Walter, Martin S. [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway); Institute of Medical and Polymer Engineering, Chair of Medical Engineering, Technische Universität München, Boltzmannstrasse 15, 85748 Garching (Germany); Lyngstadaas, S. Petter [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway); Wintermantel, Erich [Institute of Medical and Polymer Engineering, Chair of Medical Engineering, Technische Universität München, Boltzmannstrasse 15, 85748 Garching (Germany); Haugen, Håvard J., E-mail: h.j.haugen@odont.uio.no [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway)

    2013-04-01

    Dental implant alloys made from titanium and zirconium are known for their high mechanical strength, fracture toughness and corrosion resistance in comparison with commercially pure titanium. The aim of the study was to investigate possible differences in the surface chemistry and/or surface topography of titanium and titanium–zirconium surfaces after sand blasting and acid etching. The two surfaces were compared by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, scanning electron microscopy and profilometry. The 1.9 times greater surface hydrogen concentration of titanium zirconium compared to titanium was found to be the major difference between the two materials. Zirconium appeared to enhance hydride formation on titanium alloys when etched in acid. Surface topography revealed significant differences on the micro and nanoscale. Surface roughness was increased significantly (p < 0.01) on the titanium–zirconium alloy. High-resolution images showed nanostructures only present on titanium zirconium. - Highlights: ► TiZr alloy showed increased hydrogen levels over Ti. ► The alloying element Zr appeared to catalyze hydrogen absorption in Ti. ► Surface roughness was significantly increased for the TiZr alloy over Ti. ► TiZr alloy revealed nanostructures not observed for Ti.

  10. Cell adhesion and in vivo osseointegration of sandblasted/acid etched/anodized dental implants.

    Kim, Mu-Hyon; Park, Kyeongsoon; Choi, Kyung-Hee; Kim, Soo-Hong; Kim, Se Eun; Jeong, Chang-Mo; Huh, Jung-Bo

    2015-01-01

    The authors describe a new type of titanium (Ti) implant as a Modi-anodized (ANO) Ti implant, the surface of which was treated by sandblasting, acid etching (SLA), and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control), SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC) of Modi-ANO Ti (74.20%±10.89%) was much greater than those of machined (33.58%±8.63%), SLA (58.47%±12.89), or ANO Ti (59.62%±18.30%). In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant. PMID:25955650

  11. Reliability evaluation of alumina-blasted/acid-etched versus laser-sintered dental implants.

    Almeida, Erika O; Júnior, Amilcar C Freitas; Bonfante, Estevam A; Silva, Nelson R F A; Coelho, Paulo G

    2013-05-01

    Step-stress accelerated life testing (SSALT) and fractographic analysis were performed to evaluate the reliability and failure modes of dental implant fabricated by machining (surface treated with alumina blasting/acid etching) or laser sintering for anterior single-unit replacements. Forty-two dental implants (3.75 × 10 mm) were divided in two groups (n=21 each): laser sintered (LS) and alumina blasting/acid etching (AB/AE). The abutments were screwed to the implants and standardized maxillary central incisor metallic crowns were cemented and subjected to SSALT in water. Use-level probability Weibull curves and reliability for a mission of 50,000 cycles at 200 N were calculated. Polarized light and scanning electron microscopes were used for failure analyses. The Beta (β) value derived from use-level probability Weibull calculation of 1.48 for group AB/AE indicated that damage accumulation likely was an accelerating factor, whereas the β of 0.78 for group LS indicated that load alone likely dictated the failure mechanism for this group, and that fatigue damage did not appear to accumulate. The reliability was not significantly different (p>0.9) between AB/AE (61 %) and LS (62 %). Fracture of the abutment and fixation screw was the chief failure mode. No implant fractures were observed. No differences in reliability and fracture mode were observed between LS and AB/AE implants used for anterior single-unit crowns. PMID:22843309

  12. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    Mu-Hyon Kim

    2015-05-01

    Full Text Available The authors describe a new type of titanium (Ti implant as a Modi-anodized (ANO Ti implant, the surface of which was treated by sandblasting, acid etching (SLA, and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control, SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC of Modi-ANO Ti (74.20% ± 10.89% was much greater than those of machined (33.58% ± 8.63%, SLA (58.47% ± 12.89, or ANO Ti (59.62% ± 18.30%. In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant.

  13. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for

  14. COMPARISON OF SHEAR BOND STRENGTH OF COMPOSITE TO DECIDUOUS TEETH ENAMEL FOLLOWING PHOSPBORIC ACID AND ND:YAG LASER ETCHING

    M MOUSAVINASAB

    2002-09-01

    Full Text Available Introduction. Enamel acid etching prior to repair dental caries and fractures with composites has been quite satisfactory and economic, however, etching on deciduous dentition has shown less effective due to its resistance to acids. The purpose of this study was to evaluate composite bond strength on decidious teeth treated with laser instead of being acid etched. Methods. Forty four deciduous molars without any restoration or buccal decay were chased and randomly divided in the four groups of 10. Four other teeth were prepared for SEM observation. Group 1: samples were treated with Nd: YA Glaser (20 pps, 1.6 w. Group 2: samples, treated with Nd: YA Glaser (10 pps, 0.8 w. Group 3: samples acid etched with 37% phosphoric acid. Group 4: samples in this group were taken as control with no treatment on enamel. Shear bond strength of the composite and teeth in all 4 groups were then measured with universal tast machine (Dartec.Data were analysed statistically using ANOVA test. Results. The least mean amount of bond strength was related to group 4 (control, which was significantly different from other groups (P < 0.05. The most mean amount was related to group 3 (acid etched with statistically significant difference from other groups (P < 0.05. Among the samples treated with laser, group 1 has greater amount of mean strength comparing to group 2, however this difference was not significant (P > 0.05. Discussion. In order to obtain optimum bond strength for composite restorations, enamel surface should be prepared. Use of Nd: YAG laser for enamel etching under the condition of our study is not recommended on deciduous dentition.

  15. Effect of EDTA and Phosphoric Acid Pretreatment on the Bonding Effectiveness of Self-Etch Adhesives to Ground Enamel

    Ibrahim, Ihab M.; Elkassas, Dina W.; Yousry, Mai M.

    2010-01-01

    Objectives: This in vitro study determined the effect of enamel pretreatment with phosphoric acid and ethylenediaminetetraacetic acid (EDTA) on the bond strength of strong, intermediary strong, and mild self-etching adhesive systems. Methods: Ninety sound human premolars were used. Resin composite cylinders were bonded to flat ground enamel surfaces using three self-etching adhesive systems: strong Adper Prompt L-Pop (pH=0.9–1.0), intermediary strong AdheSE (pH=1.6–1.7), and mild Frog (pH=2)....

  16. No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model

    Saksø, Henrik; Jakobsen, Thomas Vestergaard; Mortensen, Mikkel Saksø; Baas, J; Jakobsen, Stig Storgaard; Soballe, K

    2013-01-01

    Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants.......Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants....

  17. The Effect of Carbon Dioxide (CO2) Laser on Sandblasting with Large Grit and Acid Etching (SLA) Surface

    Foroutan, Tahereh; Ayoubian, Nader

    2013-01-01

    Introduction: The purpose of this study was to investigate the effect of 6W power Carbon Dioxide Laser (CO2) on the biologic compatibility of the Sandblasting with large grit and acid etching (SLA) titanium discs through studying of the Sarcoma Osteogenic (SaOS-2) human osteoblast-like cells viability.

  18. Clinical Use of Laser-Microtextured Abutments: A Case Series.

    Shapoff, Cary A; Babushkin, Jeffrey A; Wohl, David J

    2016-01-01

    This article discusses the clinical use of laser-microtextured abutments on dental implant restorations. Four cases are presented, each using one of the four commercially available laser-microtextured abutment styles. Numerous preclinical and clinical studies have shown the positive effects of laser microtexturing on the implant platform in limiting crestal bone loss and benefiting soft tissue stability. Other histologic studies of laser microtexturing on the implant abutment have demonstrated the ability of this specific feature to block epithelial downgrowth and provide a functional connective tissue attachment to the abutment surface. Other abutment designs, styles, and materials have only demonstrated a soft tissue seal with epithelial adhesion and a circular ring of connective tissue fibers around the abutment without direct contact. This article presents clinical and radiographic case examples from a private practice perspective on the longterm successful use of microtextured abutments with respect to crestal bone levels, exceptional soft tissue health, and stability with minimal sulcular depth. PMID:27560683

  19. Acid Etching and Surface Coating of Glass-Fiber Posts: Bond Strength and Interface Analysis.

    Cecchin, Doglas; Farina, Ana Paula; Vitti, Rafael Pino; Moraes, Rafael Ratto; Bacchi, Ataís; Spazzin, Aloísio Oro

    2016-01-01

    The aim of this study was to evaluate the bond strength of a composite resin to glass-fiber post (GFP) treated or not with phosphoric acid, silane coupling agent, and unfilled resin. GFPs were etched or not with 37% phosphoric acid and different surface coating applied: silane coupling agent, unfilled resin, or both. Composite resin blocks were built around a 4-mm height on the GFP. Unfilled resin (20 s) and composite resin (40 s) were light activated by a light-emitting diode unit. The specimens were stored in distilled water at 37 °C for 24 h. Microtensile bond test was performed using a mechanical testing machine until failure (n=10). The data were analyzed using two-way ANOVA followed by Student-Newman-Keuls' test (padhesive, mixed, or cohesive failures. Additional specimens (n=3) were made to analyze the bonded interfaces by scanning electron microscopy. The statistical analysis showed the factor 'surface coating' was significant (pbond strength was found for the silane and unfilled resin group (padhesive and cohesive failures was found. Differences regarding the homogeneity and thickness of the unfilled resin layer formed by different GFP surface treatments were observed. The application of silane and unfilled resin can improve the bond strength between GFP and resin composite. PMID:27058389

  20. The bonding of heavy metals on nitric acid-etched coal fly ashes functionalized with 2-mercaptoethanol or thioglycolic acid

    Coal fly ash is a waste by-product of the coal fire industry, which generates many environmental problems. Alternative uses of this material would provide efficient solutions for this by-product. In this work, nitric acid-etched coal fly ash labelled with 2-mercaptoethanol or thioglycolic acid was assessed for retention of Al(III), As(III), Cu(II), Cd(II), Fe(III), Mn(II), Hg(II), Ni(II), Pb(II) and Zn(II) ions. The bonding characteristics between the organic compounds with the solid support, as well as with the metal ions, were evaluated using various surface analytical techniques. Visualization of the organically-functionalized coal fly ash particle was possible using scanning electron microscopy (SEM), while the elemental composition of the functionalized material, before and after retention of the metal ions, was obtained by energy dispersive (ED)-X ray spectrometry (XRS) and electrothermal atomic absorption spectrometry (ETAAS). Fourier transform infrared (FT-IR) spectrometry and Raman spectrometry were used to obtain information about the functional groups. It was found that some metal(oid) ions (As, Ni, Pb, Zn) were coordinated through the mercaptan group, while other metal(oid)s (Al, Cd, Cu, Fe, Hg, Mn) were apparently bonded to oxygen atoms. A low-cost and effective solid phase retention system for extraction of heavy metals from aqueous solutions was thus developed. - Graphical abstract: Nitric acid-etched coal fly ash labelled with 2-mercaptoethanol or thioglycolic acid was intended for the retention of heavy metals. The bonding characteristics between the organic compounds with the solid support, as well as with the metal ions, were evaluated using surface analytical techniques. - Highlights: • Coal fly ashes were organically-functionalized. • Organically-functionalized coal fly ashes were spectrometrically characterized. • Organically-functionalized coal fly ashes can be used as an effective solid sorbent for metal(oid)s. • This retention

  1. Relation entre la microtexture et l'adhérence

    DO, MT

    2005-01-01

    Une synthèse des travaux menés au LCPC depuis 10 ans sur la microtexture des surfaces de chaussée est présentée. Des progrès ont été accomplis dans la mesure et la caractérisation de la microtexture. Les nouveaux descripteurs de la microtexture ont été intégrés dans un modèle de contact pour le calcul d'un coefficient de frottement à basse vitesse. L'apport de la relation entre la microtexture et le frottement à basse vitesse à la prévision de l'adhérence est ensuite traité. La variation de l...

  2. Characterization of road microtexture by means of image analysis

    BEN SLIMANE, Anis; Khoudeir, Majdi; Brochard, Jacques; Do, Minh Tan

    2005-01-01

    Road surface microtexture (sub-millimeter scale) is essential for pavement skid-resistance. However, its measurement is only possible in the laboratory on cores taken from trafficked roads, and is time consuming. For efficient road monitoring, it is necessary to develop faster methods usable on-site. Collaboration has been developed for 2 years between LCPC and the laboratory Signal, Image and Communication (SIC) to develop a measurement and characterization method for road microtexture ba...

  3. Comparison of bond strength and surface morphology of dental enamel for acid and Nd-YAG laser etching

    Parmeswearan, Diagaradjane; Ganesan, Singaravelu; Ratna, P.; Koteeswaran, D.

    1999-05-01

    Recently, laser pretreatment of dental enamel has emerged as a new technique in the field of orthodontics. However, the changes in the morphology of the enamel surface is very much dependent on the wavelength of laser, emission mode of the laser, energy density, exposure time and the nature of the substance absorbing the energy. Based on these, we made a comparative in vitro study on laser etching with acid etching with reference to their bond strength. Studies were conducted on 90 freshly extracted, non carious, human maxillary or mandibular anteriors and premolars. Out of 90, 60 were randomly selected for laser irradiation. The other 30 were used for conventional acid pretreatment. The group of 60 were subjected to Nd-YAG laser exposure (1060 nm, 10 Hz) at differetn fluences. The remaining 30 were acid pretreated with 30% orthophosphoric acid. Suitable Begg's brackets were selected and bound to the pretreated surface and the bond strength were tested using Instron testing machine. The bond strength achieved through acid pretreatment is found to be appreciably greater than the laser pretreated tooth. Though the bond strength achieved through the acid pretreated tooth is found to be significantly greater than the laser pretreated specimens, the laser pretreatement is found to be successful enough to produce a clinically acceptable bond strength of > 0.60 Kb/mm. Examination of the laser pre-treated tooth under SEM showed globule formation which may produce the mechanical interface required for the retention of the resin material.

  4. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polym...

  5. No Positive Effect of Acid Etching or Plasma Cleaning on Osseointegration of Titanium Implants in a Canine Femoral Condyle Press-Fit Model

    Saksø, H; Jakobsen, T; Saksø, M; Baas, J.; Jakobsen, SS; Soballe, K

    2013-01-01

    Purpose: Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. Methods: In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control) PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control) PC+ET (Acid Etch) PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical ...

  6. Histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts in the deciduous and permanent teeth

    The purpose of this study is to compare the histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts between the deciduous molars and permanent molars. They were observed by the polarizing and scanning electron microscopies. The enamel rods were less made slender by EDTA etching and the outlines of the apatite crystals, constituting the enamel rods, were clearer at the occlusal pit part of the deciduous molar than that of the permanent molar in reverse of that at the cusp part. It is thought that the enamel at the occlusal pit part of the permanent molar is more easily decayed by the dental caries than that of the deciduous molar because the former is more easily decayed by the acidic etching than the latter in reverse at the cusp part. It is considered that the thin superficialmost layer of the enamel at the occlusal pit part of the permanent molar has originally higher degree of resistance to the dental caries

  7. Histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts in the deciduous and permanent teeth

    Takahashi, Masashi [Department of Dental Hygiene, Nippon Dental University College at Niigata, Niigata 951-8580 (Japan)]. E-mail: masashi@ngt.ndu.ac.jp; Zheng, Jinhua [Department of Oral Anatomy, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Mori, Kazuhisa [Department of Oral Surgery, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Mataga, Izumi [Department of Oral Surgery, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Kobayashi, Kan [Department of Oral Anatomy, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan)

    2006-05-15

    The purpose of this study is to compare the histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts between the deciduous molars and permanent molars. They were observed by the polarizing and scanning electron microscopies. The enamel rods were less made slender by EDTA etching and the outlines of the apatite crystals, constituting the enamel rods, were clearer at the occlusal pit part of the deciduous molar than that of the permanent molar in reverse of that at the cusp part. It is thought that the enamel at the occlusal pit part of the permanent molar is more easily decayed by the dental caries than that of the deciduous molar because the former is more easily decayed by the acidic etching than the latter in reverse at the cusp part. It is considered that the thin superficialmost layer of the enamel at the occlusal pit part of the permanent molar has originally higher degree of resistance to the dental caries.

  8. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Hinata, Toru; Washio, Masakazu [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Oshima, Akihiro; Tagawa, Seiichi [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  9. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. PMID:27315775

  10. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength. PMID:22414522

  11. Surface modification of Y3Al5O12:Ce3+ phosphor by hydrofluoric acid wet etching

    The surface of Y3Al5O12:Ce3+ phosphor prepared by solid-state reaction was modified by hydrofluoric acid wet etching. The SEM pictures show that the edge-angles-rich surface of the phosphor particles becomes smooth and the XRD spectra show that the surface crystallinity is improved after modification for more than 3 h. Consequently, the photoluminescence emission from phosphor particles with smooth surface presents a higher quantum yield (increased by 5.5%) than that without modification, and a lower backscattering light by the smoothed phosphor particles is also found, which suggests better surface characteristics of light absorption, transparency and crystallinity. -- Highlights: ► HF wet etching way is introduced to modify the YAG phosphor surface for the first time. ► The surface with riched edge angles has become smooth. ► The photoluminescence emission intensity is increased by 5.5%. ► The backscattering light intensity is obviously decreased. ► The wet etching method with HF is appropriate for mass process

  12. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  13. Polycrystalline Wafers of Silicalite-1 etched by HF Acid and Viewed by SEM

    Brabec, Libor; Kočiřík, Milan

    2004-01-01

    Roč. 228, č. 1 (2004), s. 1-4. ISSN 0169-4332 R&D Projects: GA ČR GA104/01/0945; GA AV ČR IAA1040101 Institutional research plan: CEZ:AV0Z4040901 Keywords : HF etching * grain boundaries visualization * carbon residue Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.497, year: 2004

  14. Photopolymerization of phosphoric acid ester-based self-etch dental adhesives

    Zhang, Ying; Wang, Yong

    2013-01-01

    The objective of the study was to gain more understanding on the photopolymerization mechanism and the role of individual monomers in the polymerization behavior of a PAE-based self-etch adhesive system with the presence of HAp and water. The photo-polymerization process of the model adhesive system (2MP / HEMA) was monitored by using real-time attenuated total reflectance Fourier transform infrared (ATR/FT-IR) technique. The effect of monomer ratio, HAp incorporation, and water content were ...

  15. Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

    Castro, F. L. A.; Carvalho, J. G.; Andrade, M. F.; Saad, J. R. C.; Hebling, J.; Lizarelli, R. F. Z.

    2014-08-01

    This study evaluated the effect on micro-tensile bond strength (µ-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer’s instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd:YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm2) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (α = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher µ-TBS than etched and irradiated surfaces (p 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher µ-TBS when compared to the suggested manufacturer’s technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

  16. Influence of different acid etchings on the superficial characteristics of Ti sandblasted with Al2O3

    Bruno Ramos Chrcanovic

    2013-01-01

    Full Text Available Some implant manufactures use Al2O3 instead TiO2 powder to sandblast the machined dental implant, because Al2O3 powder is commercially more easily available and is cheaper than TiO2 powder. However, Al2O3 powder usually leaves aluminum oxide contamination on the surface, which is potentially toxic. In this work, we subjected Ti discs previously sandblasted with Al2O3 powder to 5 different acid etchings in order to verify which treatment is able to remove incorporated particles of Al2O3 from the surface. One group of samples were only sandblasted and served as control. The samples were analyzed by electron microscopy (SEM, EDS, scanning probe microscopy, and grazing incidence XRD. The control group showed presence of Al2O3 on the surface. Three acid etchings were efficient in removing the alumina from the tested samples. Almost all the tested samples showed higher roughness parameters values than the control samples. Titanium hydride was found in almost all test groups. Moreover, the results suggest that there is no incorporation of the whole Al2O3 particle into the titanium surface after the collision, conversely a particle fragmentation occurs and what remains on the titanium surface are Al2O3 residues.

  17. Phosphoric acid and sodium fluoride: a novel etching combination on titanium

    We investigate whether a novel and inexpensive etching method, H3PO4 + NaF, on titanium could obtain both a lower hydrogen content and superior calcium phosphate deposition performance, while achieving similar surface roughness in comparison with the traditional etching method. Pure titanium samples were treated with different concentrations of H3PO4 + NaF at ambient temperature without auxiliary implementations (groups A, B and C), and were treated using the traditional method (group T). The samples were then maintained in simulated body fluid for 10 and 20 days. The surface morphology and chemistry, as well as the hydrogen content and distribution, were studied. The hydrogen content of the new groups are in the range of 31 (3.6)–86.9 (7.2) ppm, and that of group T is 287 (13.5) ppm. The amount of deposited calcium phosphates increases as the hydrogen content approaches 90 ppm; however, this trend does not apply as the hydrogen content exceeds 90 ppm. The surface roughnesses of groups A, B and C are in the range of 0.47 (0.01)–0.92 (0.05) µm. The new surface topography regularly transforms, and the surfaces with round pits exert a better effect on the deposition of calcium phosphates than the surfaces with sharp cusps. (paper)

  18. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  19. Dynamics of Spreading on Micro-Textured Surfaces

    Mohammad Karim, Alireza; Rothstein, Jonathan; Kavehpour, Pirouz

    2015-11-01

    Ultrahydrophobic surfaces, due to their large water-repellency characteristic, have a vast variety of applications in technology and nature, such as de-icing of airplane wings, efficiency increase of power plants, and efficiency of pesticides on plants, etc. The significance of ultrahydrophobic surfaces requires enhancing the knowledge on the spreading dynamics on such surfaces. The best way to produce an ultrahydrophobic surface is by patterning of smooth hydrophobic surfaces with micron sized posts. In this research, the micro-textured surfaces have been fabricated by patterning several different sizes of micro-textured posts on Teflon plates. The experimental study has been performed using forced spreading with Tensiometer to obtain the dependencw of dynamic contact angle to the contact line velocity to describe the spreading dynamics of Newtonian liquids on the micro-textured surfaces. The effect of the geometrical descriptions of the micro-posts along with the physical properties of liquids on the spreading dynamics on micro-textured Teflon plates have been also studied.

  20. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  1. Evaluation of Bone Healing on Sandblasted and Acid Etched Implants Coated with Nanocrystalline Hydroxyapatite: An In Vivo Study in Rabbit Femur

    Lory Melin Svanborg

    2014-01-01

    Full Text Available This study aimed at investigating if a coating of hydroxyapatite nanocrystals would enhance bone healing over time in trabecular bone. Sandblasted and acid etched titanium implants with and without a submicron thick coat of hydroxyapatite nanocrystals (nano-HA were implanted in rabbit femur with healing times of 2, 4, and 9 weeks. Removal torque analyses and histological evaluations were performed. The torque analysis did not show any significant differences between the implants at any healing time. The control implant showed a tendency of more newly formed bone after 4 weeks of healing and significantly higher bone area values after 9 weeks of healing. According to the results from this present study, both control and nano-HA surfaces were biocompatible and osteoconductive. A submicron thick coating of hydroxyapatite nanocrystals deposited onto blasted and acid etched screw shaped titanium implants did not enhance bone healing, as compared to blasted and etched control implants when placed in trabecular bone.

  2. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  3. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  4. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect. PMID:22298375

  5. Microtextures and grain boundary misorientation distributions in controlled heat input titanium alloy fusion welds

    Leary, R; Brydson, R [Institute for Materials Research, University of Leeds, Leeds, LS2 9JT (United Kingdom); Merson, E, E-mail: pm06rkl@leeds.ac.u [National Metals Technology Centre, Swinden House, Moorgate Road, Rotherham, South Yorkshire, S60 3AR (United Kingdom)

    2010-07-01

    Microstructures, macrotextures and microtextures in commercial purity titanium and Ti-6Al-4V fusion welds produced by the InterPulse gas tungsten constricted arc welding (GTCAW) technique have been characterised. At the cooling rates associated with the InterPulse technique, {alpha} variants sharing a common 1120 pole are found to cluster together into groups within prior {beta} grains, leading to large areas where all variants are separated by a misorientation of 60deg. These present potential easy slip paths, hence increasing the 'effective structural unit size'. Characterisation of these microtextures may provide new insight into microtexture-properties relations and the mechanisms of microtextural evolution.

  6. Microtextures and grain boundary misorientation distributions in controlled heat input titanium alloy fusion welds

    Leary, R.; Merson, E.; Brydson, R.

    2010-07-01

    Microstructures, macrotextures and microtextures in commercial purity titanium and Ti-6Al-4V fusion welds produced by the InterPulse gas tungsten constricted arc welding (GTCAW) technique have been characterised. At the cooling rates associated with the InterPulse technique, α variants sharing a common 1120 pole are found to cluster together into groups within prior β grains, leading to large areas where all variants are separated by a misorientation of 60°. These present potential easy slip paths, hence increasing the "effective structural unit size." Characterisation of these microtextures may provide new insight into microtexture-properties relations and the mechanisms of microtextural evolution.

  7. Plasma-nitriding assisted micro-texturing into stainless steel molds

    Aizawa Tatsuhiko; Suga Hiroaki; Yamaguchi Tetsuya

    2015-01-01

    Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns...

  8. Using 3D Images to Analyse the Microtexture of Aggregates

    NATAADMADJA, Adelia; Wilson, Douglas; COSTELLO, Seosamh; Do, Minh Tan

    2013-01-01

    Skid resistance, whilst being complex, is one of the more controllable factors that road engineers can design and modify to reduce the number of wet pavement and loss of control crashes. However, due to the fact that it deteriorates over time due to polishing and/or abrasion, it is desirable to be able to predict the long term skid resistance performance of aggregates before the road surface is constructed. Skid resistance consists of both microtexture and macrotexture. There are a number of ...

  9. Silicalite-1 Crystals Etched with Hydrofluoric Acid Dissolved in Water or Acetone

    Brabec, Libor; Kočiřík, Milan

    2010-01-01

    Roč. 114, č. 32 (2010), s. 13685-13694. ISSN 1932-7447 R&D Projects: GA AV ČR IAA400400909 Institutional research plan: CEZ:AV0Z40400503 Keywords : silicalite-1 crystals * acetone * hydrofluorid acid Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.520, year: 2010

  10. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II–V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease. (paper)

  11. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    Geringer, Jean; Demanget, Nicolas; Pellier, Julie

    2013-10-01

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II-V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease.

  12. Effect of nano Cu coating on porous Si prepared by acid etching Al-Si alloy powder

    As a promising anode material for lithium ion battery, nano-Cu coated porous Si powder was fabricated through two stages: first, preparation of porous nano Si fibers by acid-etching Al-Si alloy powder; second, modified by nano-Cu particles using an electroless plating method. The nano-Cu particles on the surface of nano-Si fibers, not only increase the conductivity of material, but also inhibit the fuse process between nano Si fibers during charge/discharge cycling process, resulting in increased cycling stability of the material. In 1 M LiPF6/EC: DMC (1:1) + 1.5 wt% VC solution at current density of 200 mA g−1, the 150th discharge capacity of nano-Cu coated porous Si electrode was 1651 mAh g−1 with coulombic efficiency of 99%. As anode material for lithium ion battery, nano-Cu coated porous Si nano fiber material is easier to prepare, costs less, and produces higher performance, representing a promising approach for high energy lithium ion battery application

  13. Prospective clinical evaluation of 273 modified acid-etched dental implants: 1- to 5- year results

    Michele De Franco

    2012-03-01

    Full Text Available Aim: The aim of this study was to evaluate the implant survival and the implant-crown success of implants with surface treated with organic acids. Materials and methods: A total of 273 implants (Implus®, Leader-Novaxa, Milan, Italy were inserted in 63 patients, from June 2006 to June 2010, in a single clinical centre. In each annual follow up session, clinical, radiographic and prosthetic parameters were evaluated. The implant-crown success criteria included the absence of pain, suppuration and clinical mobility, a distance between the implant shoulder and the first visible bone contact (DIB <2.0 mm from the surgery and the absence of prosthetic complications at the implantabutment interface. Prosthetic restorations were 32 fixed partial prostheses, 48 single crowns and 16 fixed full arches. Results: The cumulative survival rate was 95.70% (93.81 maxilla, 98.24% mandible. Among the surviving implants, the implant-crown success was 96.07%. At the 5-year control, the mean DIB was 1.2 mm (± 0.5. Conclusion: Implants with surface treated with organic acids seem to represent a good solution for the prosthetic rehabilitation of partially and completely edentulous patients.

  14. Discovery of Naturally Etched Fission Tracks and Alpha-Recoil Tracks in Submarine Glasses: Reevaluation of a Putative Biosignature for Earth and Mars

    Jason E. French

    2016-01-01

    Full Text Available Over the last two decades, conspicuously “biogenic-looking” corrosion microtextures have been found to occur globally within volcanic glass of the in situ oceanic crust, ophiolites, and greenstone belts dating back to ~3.5 Ga. These so-called “tubular” and “granular” microtextures are widely interpreted to represent bona fide microbial trace fossils; however, possible nonbiological origins for these complex alteration microtextures have yet to be explored. Here, we reevaluate the origin of these enigmatic microtextures from a strictly nonbiological standpoint, using a case study on submarine glasses from the western North Atlantic Ocean (DSDP 418A. By combining petrographic and SEM observations of corrosion microtextures at the glass-palagonite interface, considerations of the tectonic setting, measurement of U and Th concentrations of fresh basaltic glass by ICP-MS, and theoretical modelling of the present-day distribution of radiation damage in basaltic glass caused by radioactive decay of U and Th, we reinterpret these enigmatic microtextures as the end product of the preferential corrosion/dissolution of radiation damage (alpha-recoil tracks and fission tracks in the glass by seawater, possibly combined with pressure solution etch-tunnelling. Our findings have important implications for geomicrobiology, astrobiological exploration of Mars, and understanding of the long-term breakdown of nuclear waste glass.

  15. Laser microtexturing of implant surfaces for enhanced tissue integration

    Ricci, J.L. [Univ. of Medicine and Dentistry of New Jersey, Newark, NJ (United States). Dept. of Orthodontics; Alexander, H. [Orthogen Corp., Springfield, NJ (United States)

    2001-07-01

    The success or failure of bone and soft tissue-fixed medical devices, such as dental and orthopaedic implants, depends on a complex combination of biological and mechanical factors. These factors are intimately associated with the interface between the implant surface and the surrounding tissue, and are largely determined by the composition, surface chemistry, and surface microgeometry of the implant. The relative contributions of these factors are difficult to assess. This study addresses the contribution of surface microtexture, on a controlled level, to tissue integration. (orig.)

  16. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

    Ahmad, Muthanna; Grime, Geoffrey W

    2013-04-01

    Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS. PMID:23388452

  17. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  18. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

    Tavares, Henrique Dutra Simoes

    2001-07-01

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0

  19. Optical investigation of the intergrowth structure and accessibility of Brønsted acid sites in etched SSZ-13 zeolite crystals by confocal fluorescence microscopy.

    Sommer, Linn; Svelle, Stian; Lillerud, Karl Petter; Stöcker, Michael; Weckhuysen, Bert M; Olsbye, Unni

    2010-11-01

    Template decomposition followed by confocal fluorescence microscopy reveals a tetragonal-pyramidal intergrowth of subunits in micrometer-sized nearly cubic SSZ-13 zeolite crystals. In order to accentuate intergrowth boundaries and defect-rich areas within the individual large zeolite crystals, a treatment with an etching NaOH solution is applied. The defective areas are visualized by monitoring the spatial distribution of fluorescent tracer molecules within the individual SSZ-13 crystals by confocal fluorescence microscopy. These fluorescent tracer molecules are formed at the inner and outer crystal surfaces by utilizing the catalytic activity of the zeolite in the oligomerization reaction of styrene derivatives. This approach reveals various types of etching patterns that are an indication for the defectiveness of the studied crystals. We can show that specially one type of crystals, denoted as core-shell type, is highly accessible to the styrene molecules after etching. Despite the large crystal dimensions, the whole core-shell type SSZ-13 crystal is utilized for catalytic reaction. Furthermore, the confocal fluorescence microscopy measurements indicate a nonuniform distribution of the catalytically important Brønsted acid sites underlining the importance of space-resolved measurements. PMID:20496927

  20. Effect of acid vapor etching on morphological and opto-electric properties of flat silicon and silicon nanowire arrays: A comparative study

    Amri, Chohdi; Ouertani, Rachid; Hamdi, Abderrahmen; Ezzaouia, Hatem

    2016-03-01

    In this paper, we report a comparative study between porous silicon (pSi) and porous silicon nanowires (pSiNWs). Acid Vapor Etching (AVE) treatment has been used to perform porous structure on flat Si and SiNWs array substrates respectively. SiNW structure is prepared by the widely used Silver catalyzed etching method. SEM and TEM images show that AVE treatment induces porous structure in the whole Si wafer and the SiNW sidewall. Comparatively to pSi, pSiNWs exhibit a low reflectivity in the whole spectral range which decreases with etching duration. However, the reflectivity of pSi changes with porous layer thickness. Both pSi and pSiNWs exhibit a significant PL peak situated at 2 eV. PL peaks are attributed to the quantum confinement effect in the silicon nanocrystallites (SiNCs). We discussed the significant enhancement in the peak intensities and a shift toward lower energy displayed in Raman spectra for both pSi and pSiNWs. We reported a correlative study of the AVE treatment effect on the minority carrier life time of flat silicon and SiNW arrays with the passivation effect of chemical induced silicon oxides highlighted by FTIR spectra.

  1. Tensile bond strength and SEM analysis of enamel etched with Er:YAG laser and phosphoric acid: a comparative study in vitro

    Sasaki, Luis H.; Tanaka, Celso Shin-Ite [Bandeirante University of Sao Paulo, Sao Paulo, SP (Brazil). Dept. of Prosthodontics; Lobo, Paulo D.C.; Villaverde, Antonio B.; Moriyama, Eduardo H.; Brugnera Junior, Aldo [University of Vale do Paraba, Sao Jose dos Campos, SP (Brazil). Inst. of Research and Development]. E-mail: abrugnera@uol.com.br; Moriyama, Yumi [Ontario Cancer Institute, Toronto, ON (Canada). Div. of Biophysics and Bioimaging; Watanabe, Ii-Sei [University of Sao Paulo (USP), SP (Brazil). Inst. of Biomedical Sciences

    2008-01-15

    Er:YAG laser has been studied as a potential tool for restorative dentistry due to its ability to selectively remove oral hard tissue with minimal or no thermal damage to the surrounding tissues. The purpose of this study was to evaluate in vitro the tensile bond strength (TBS) of an adhesive/composite resin system to human enamel surfaces treated with 37% phosphoric acid, Er:YAG laser ({lambda}=2.94 {mu}m) with a total energy of 16 J (80 mJ/pulse, 2Hz, 200 pulses, 250 ms pulse width), and Er:YAG laser followed by phosphoric acid etching. Analysis of the treated surfaces was performed by scanning electron microscopy (SEM) to assess morphological differences among the groups. TBS means (in MPa) were as follows: Er:YAG laser + acid (11.7 MPa) > acid (8.2 MPa) > Er:YAG laser (6.1 MPa), with the group treated with laser+acid being significantly from the other groups (p=0.0006 and p= 0.00019, respectively). The groups treated with acid alone and laser alone were significantly different from each other (p=0.0003). The SEM analysis revealed morphological changes that corroborate the TBS results, suggesting that the differences in TBS means among the groups are related to the different etching patterns produced by each type of surface treatment. The findings of this study indicate that the association between Er:YAG laser and phosphoric acid can be used as a valuable resource to increase bond strength to laser-prepared enamel. (author)

  2. Tensile bond strength and SEM analysis of enamel etched with Er:YAG laser and phosphoric acid: a comparative study in vitro

    Er:YAG laser has been studied as a potential tool for restorative dentistry due to its ability to selectively remove oral hard tissue with minimal or no thermal damage to the surrounding tissues. The purpose of this study was to evaluate in vitro the tensile bond strength (TBS) of an adhesive/composite resin system to human enamel surfaces treated with 37% phosphoric acid, Er:YAG laser (λ=2.94 μm) with a total energy of 16 J (80 mJ/pulse, 2Hz, 200 pulses, 250 ms pulse width), and Er:YAG laser followed by phosphoric acid etching. Analysis of the treated surfaces was performed by scanning electron microscopy (SEM) to assess morphological differences among the groups. TBS means (in MPa) were as follows: Er:YAG laser + acid (11.7 MPa) > acid (8.2 MPa) > Er:YAG laser (6.1 MPa), with the group treated with laser+acid being significantly from the other groups (p=0.0006 and p= 0.00019, respectively). The groups treated with acid alone and laser alone were significantly different from each other (p=0.0003). The SEM analysis revealed morphological changes that corroborate the TBS results, suggesting that the differences in TBS means among the groups are related to the different etching patterns produced by each type of surface treatment. The findings of this study indicate that the association between Er:YAG laser and phosphoric acid can be used as a valuable resource to increase bond strength to laser-prepared enamel. (author)

  3. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    Nam-Ho Kim; So-Hyoun Lee; Jae-Jun Ryu; Kyung-Hee Choi; Jung-Bo Huh

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated contro...

  4. Evolution of microstructure, macrotexture and microtexture during hot rolling of Ti-6Al-4V

    The evolution of microstructure, macrotexture and microtexture during subtransus hot working of Ti-6Al-4V with two different types of transformed β starting microstructures (lamellar colony, acicular martensitic α) was investigated. Globularization of the transformed microstructures required heavy rolling reductions or moderate reductions coupled with near transus post-rolling heat treatment. Despite the sluggish dynamic globularization kinetics, noticeable macrotexture changes were noted after low reductions, an effect ascribed to the rotations associated with kinking and bending of the lamellar acicular plates. Noticeable microtextures, noted in samples with an initial lamellar colony microstructure, persisted through hot rolling suggesting that dynamic globularization does not involve recrystallization. In contrast, hot rolled material with a starting acicular α microstructure exhibited weak microtextures and strong macrotextures. The absence of microtexture in these latter cases was explained on the basis of multiple transformation variants within each colony/prior β grain following the β-annealing-and-water-quenching process used to obtain the microstructure. (orig.)

  5. Plasma-nitriding assisted micro-texturing into stainless steel molds

    Aizawa Tatsuhiko

    2015-01-01

    Full Text Available Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns were printed onto the surface of substrate by using the ink-jet printer. Then, the masked substrate was subjected to high density plasma nitriding; the un-masked surfaces were nitrided to have higher hardness. This nitrided substrate was further treated by sand-blasting to selectively dig the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel substrate was fabricated as a mold to duplicate these micro-patterns onto the work materials. The spatial resolution and depth profile controllability of this plasma nitriding assisted micro-texturing was investigated for variety of initial micro-patterns. The original size and dimension of initial micro-patterns were precisely compared with the three dimensional geometry of micro-textures after blasting treatment. The plastic cover case for smart cellular phones was employed to demonstrate how useful this processing is in practice.

  6. Etching of nanostructures on soda-lime glass.

    Wang, Elmer; Zhao, Yang

    2014-07-01

    Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths. PMID:24978727

  7. Regulation of Osteoblast Differentiation by Acid-Etched and/or Grit-Blasted Titanium Substrate Topography Is Enhanced by 1,25(OH)2D3 in a Sex-Dependent Manner

    Rene Olivares-Navarrete; Hyzy, Sharon L.; Boyan, Barbara D; Zvi Schwartz

    2015-01-01

    This study assessed contributions of micron-scale topography on clinically relevant titanium (Ti) to differentiation of osteoprogenitor cells and osteoblasts; the interaction of this effect with 1α,25-dihydroxyvitamin D3 (1α,25(OH)2D3); and if the effects are sex-dependent. Male and female rat bone marrow cells (BMCs) were cultured on acid-etched (A, R a = 0.87 μm), grit-blasted (GB, R a = 3.90 μm), or grit-blasted/acid-etched (SLA, R a = 3.22 μm) Ti. BMCs were sensitive to surface topography...

  8. Quantificational Etching of AAO Template

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  9. Microtexture tracking in hot-deformed polycrystalline aluminium: Experimental results

    Quey, R., E-mail: quey@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France); Piot, D., E-mail: piot@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France); Driver, J.H., E-mail: driver@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France)

    2010-03-15

    A split sample of Al-0.1%Mn has been deformed by a series of compression tests in a channel-die at 400 deg. C to a final strain of 1.6. The orientations of 176 grains in a 4x4mm{sup 2} internal surface were followed by high-resolution electron backscatter diffraction at four different strains to compare with crystal plasticity models. Typically 3000 orientations per grain were used to quantify the average lattice rotations of each grain together with their orientation spreads (termed microtexture tracking). The average orientations tend towards the standard {beta}-fibre plane-strain compression texture components, albeit with some variations. The in-grain orientation spreads develop strongly at first, then tend to saturate at high strains. Finally, the influence of grain environment on lattice rotation is examined by means of the rotation 'variability at constant orientation'. On average and at the beginning of the deformation, two grains of the same initial orientation, but different neighbours, would rotate by angles that vary by 25% and axes separated by 37 deg.; their orientations at {epsilon}=1.2 would vary by 12 deg.

  10. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching. PMID:27159837

  11. Microstructural and microtextural analysis of InterPulse GTCAW welds in Cp-Ti and Ti-6Al-4V

    Leary, Rowan K., E-mail: rkl26@cam.ac.uk [Institute for Materials Research, University of Leeds, Leeds LS2 9JT (United Kingdom); Merson, Eleanor [National Metals Technology Centre, Swinden House, Moorgate Road, Rotherham S60 3AR (United Kingdom); Birmingham, Keith; Harvey, David [VBC Group, Castle Business Park, Pavilion Way, Loughborough, Leicestershire LE11 5GW (United Kingdom); Brydson, Rik, E-mail: mtlrmdb@leeds.ac.uk [Institute for Materials Research, University of Leeds, Leeds LS2 9JT (United Kingdom)

    2010-11-15

    Research highlights: {yields} Evaluation of a new low heat input welding technique for titanium alloys. {yields} Demonstration of the potential to tailor weld microstructures and microtextures. {yields} New insight into the mechanisms of microtextural evolution in titanium alloys. {yields} {alpha} Variants sharing a common 112-bar 0 pole are found to cluster into groups. {yields} Direct analysis of the impact of microtexture on mechanical properties. - Abstract: The InterPulse technique is an advanced gas tungsten constricted arc welding (GTCAW) method for controlled heat input welding of titanium alloys. Microstructural and microtextural analysis has been used to show that the technique has the potential to produce high integrity welds in Cp-Ti and Ti-6Al-4V while welding outside of a vacuum chamber and without a trailing gas shield. The arc waveform control provided by the technique is shown to have the potential to tailor weld macrostructures, microstructures and microtextures. At the cooling rates associated with the technique, {alpha}-variants sharing a common (112-bar 0) pole are found to cluster together into groups within prior {beta} grains, leading to large areas where all variants are separated by a misorientation of 60 deg. Characterisation of these microtextures may provide new insight into microtexture-properties relations and the mechanisms of microtextural evolution.

  12. Kinetics and microtextures formation during serpentinization: role of grain scale processes and transport

    malvoisin, B.; Brunet, F.; Carlut, J. H.

    2013-12-01

    Serpentinization of mantle rocks plays a key role on the physical properties of the lithosphere at mid-ocean ridges and in subduction zones. This reaction is controlled by processes occurring at scales ranging from the grain to the lithosphere but the relative importance of these processes on the kinetics and microtextures formation has not been investigated. First, hydrothermal experiments on powders of San Carlos olivine at 500 bars in the 250 - 350 °C range were monitored with a magnetic method to study the kinetics and processes of the reaction at the grain scale. For an initial grain size (IGS) > 5 μm, lizardite, brucite, magnetite and hydrogen formed at a rate one to two orders of magnitude slower than the kinetics used to model serpentinization-related processes. Moreover, the serpentinization rate decreased linearly with the square of the IGS and reaction progress vs. time curves displayed a sigmoid form. The kinetics were controlled by the dissolution of olivine increasing with its reactive surface area which was generated with two cooperating processes (etch pits and grain fracturing) during the first stages of the reaction. Then, hydrothermal experiments were conducted on sintered San Carlos olivine to investigate the role of transport on the reaction. On sintered with a grain size of 1 to 5 μm, low reaction progresses of ~ 3 % in 10 months were obtained and the rate of serpentinization was one order of magnitude slower than on powders and one order of magnitude faster than on a single grain of the size of the sintered. Kinetics were controlled by a coupling between the reaction rate at the grain scale and the rate of fluid pathways formation at grain boundaries. Lizardite precipitated where olivine dissolved whereas magnetite and brucite segregated at the surface of the sintered. These results are in agreement with the observation of magnetite formation and segregation in fractures in naturally serpentinized peridotites and could explain the sparse

  13. Microstructure and microtexture evolutions of deformed oxide layers on a hot-rolled microalloyed steel

    Highlights: • Microtexture development of deformed oxide layers is investigated. • Magnetite shares the {0 0 1} fibre texture with wustite. • Hematite develops the {0 0 0 1} basal fibre parallel to the oxide growth. • Stress relief and ion vacancy diffusion mechanism for magnetite seam. - Abstract: Electron backscatter diffraction (EBSD) analysis has been presented to investigate the microstructure and microtexture evolutions of deformed oxide scale formed on a microalloyed steel during hot rolling and accelerated cooling. Magnetite and wustite in oxide layers share a strong {0 0 1} and a weak {1 1 0} fibres texture parallel to the oxide growth. Trigonal hematite develops the {0 0 0 1} basal fibre parallel to the crystallographic plane {1 1 1} in magnetite. Taylor factor estimates have been conducted to elucidate the microtexture evolution. The fine-grained magnetite seam adjacent to the substrate is governed by stress relief and ions vacancy diffusion mechanism

  14. Comparison of alkaline phosphatase activity of MC3T3-E1 cells cultured on different Ti surfaces: modified sandblasted with large grit and acid-etched (MSLA), laser-treated, and laser and acid-treated Ti surfaces

    Li, Lin-Jie; Kim, So-Nam

    2016-01-01

    PURPOSE In this study, the aim of this study was to evaluate the effect of implant surface treatment on cell differentiation of osteoblast cells. For this purpose, three surfaces were compared: (1) a modified SLA (MSLA: sand-blasted with large grit, acid-etched, and immersed in 0.9% NaCl), (2) a laser treatment (LT: laser treatment) titanium surface and (3) a laser and acid-treated (LAT: laser treatment, acid-etched) titanium surface. MATERIALS AND METHODS The MSLA surfaces were considered as the control group, and LT and LAT surfaces as test groups. Alkaline phosphatase expression (ALP) was used to quantify osteoblastic differentiation of MC3T3-E1 cell. Surface roughness was evaluated by a contact profilometer (URFPAK-SV; Mitutoyo, Kawasaki, Japan) and characterized by two parameters: mean roughness (Ra) and maximum peak-to-valley height (Rt). RESULTS Scanning electron microscope revealed that MSLA (control group) surface was not as rough as LT, LAT surface (test groups). Alkaline phosphatase expression, the measure of osteoblastic differentiation, and total ALP expression by surface-adherent cells were found to be highest at 21 days for all three surfaces tested (P.05). CONCLUSION This study suggested that MSLA and LAT surfaces exhibited more favorable environment for osteoblast differentiation when compared with LT surface, the results that are important for implant surface modification studies. PMID:27350860

  15. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu2+/bicinchoninic acid pair with improved sensitivity

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2015-12-01

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml-1) and a wide working range (0.5 to 1000 μg ml-1) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications.Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu2+. The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu2+/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu2+ and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical

  16. Effect of pre-etching on sealing ability of two current self-etching adhesives

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  17. Effect of bulk microstructure of commercially pure titanium on surface characteristics and fatigue properties after surface modification by sand blasting and acid-etching.

    Medvedev, A E; Ng, H P; Lapovok, R; Estrin, Y; Lowe, T C; Anumalasetty, V N

    2016-04-01

    Surface modification techniques are widely used to enhance the biological response to the implant materials. These techniques generally create a roughened surface, effectively increasing the surface area thus promoting cell adhesion. However, a negative side effect is a higher susceptibility of a roughened surface to failure due to the presence of multiple stress concentrators. The purpose of the study reported here was to examine the effects of surface modification by sand blasting and acid-etching (SLA) on the microstructure and fatigue performance of coarse-grained and ultrafine-grained (UFG) commercially pure titanium. Finer grain sizes, produced by equal channel angular pressing, resulted in lower values of surface roughness in SLA-processed material. This effect was associated with greater resistance of the UFG structure to plastic deformation. The fatigue properties of UFG Ti were found to be superior to those of coarse-grained Ti and conventional Ti-6Al-4V, both before and after SLA-treatment. PMID:26703365

  18. Quantification of proteins using enhanced etching of Ag coated Au nanorods by the Cu(2+)/bicinchoninic acid pair with improved sensitivity.

    Liu, Wenqi; Hou, Shuai; Yan, Jiao; Zhang, Hui; Ji, Yinglu; Wu, Xiaochun

    2016-01-14

    Plasmonic nanosensors show great potential in ultrasensitive detection, especially with the plasmon peak position as the detection modality. Herein, a new sensitive but simple total protein quantification method termed the SPR-BCA assay is demonstrated by combining plasmonic nanosensors with protein oxidation by Cu(2+). The easy tuning of localized surface plasmon resonance (LSPR) features of plasmonic nanostructures makes them ideal sensing platforms. We found that the Cu(2+)/bicinchoninic acid (BCA) pair exhibits accelerated etching of Au@Ag nanorods and results in the LSPR peak shift. A linear relationship between Cu(2+) and the LSPR shift is found in a double logarithmic coordinate. Such double logarithm relationship is transferred to the concentration of proteins. Theoretical simulation shows that Au nanorods with large aspect ratios and small core sizes show high detection sensitivity. Via optimized sensor design, we achieved an increased sensitivity (the limit of detection was 3.4 ng ml(-1)) and a wide working range (0.5 to 1000 μg ml(-1)) compared with the traditional BCA assay. The universal applicability of our method to various proteins further proves its potential in practical applications. PMID:26669539

  19. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  20. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. PMID:26418567

  1. Surface Microtextures of Slipping Zone Soil of Some Landslides in the Three Gorges Reservoir District and Their Significance

    2000-01-01

    The mineral assemblage and content and surface microtextures of slipping zone soil of several landslides in the Three Gorges Reservoir District have been analyzed using the scanning electron microscope (SEM) and X-ray diffractometer (XRD). All the mineral assemblages are similar in these landslides. The main minerals are montmorillonite, illite, kaolinite, chlorite, quartz and feldspar. There are two kinds of surface microtexture in the slipping zone soil, i.e., linear scratches and arcuate scratches. Based on analyses of the changes of the microtextures, one can obtain information about the number, directions and stages of landslide movements. The authors have also studied the mechanism of landslide formation, evaluated the stability of landslides and revival possibility of ancient landslides and forecasted the activity of similar landslides in different districts. The surface microtexture features of stable landslides and mobile landslides are summarized and it is concluded that the existence of filamentous bacteria may result in or increase movements of landslides.

  2. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  3. Plasma etch chemistry for anisotropic etching of silicon

    A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl3 has Br2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon

  4. Microtexture and orientation relations analysis in surroundings of shear bands in monocrystalline copper

    By means of systematic measurements of single orientations the microtexture and the orientation relations in the area of partly recrystallized shear bands in deformed (112)[11 anti 1[ single crystals of pure copper have been investigated. In the analysis the distribution function of orientations and orientation differences of various kinds were calculated. In the calculations of these orientation characteristics the direct method and also for comparison the commonly used series expansion method were applied. To enable a comparison of the calculated results, both methods require some definite modifications which are explained in the paper. The results of the microtexture analysis are discussed concerning details of the texture changes and the orientation relations between the deformed matrix and the recrystallized grains. (orig.)

  5. Metasomatic Mechanism of Weathering-Pedogenesis of Carbonate Rocks: I. Mineralogical and Micro-Textural Evidence

    朱立军; 李景阳

    2002-01-01

    On the basis of mineralogical, geochemical and micro-textural studies of the typical sections of the red weathering crust of carbonate rocks in the subtropical karst areas of Guizhou Province and Guangxi Autonomous Region, we have found, either on a microscopic or on a macroscopical scale and in different positions of the sections, the most direct and most important mineralogical and micro-textural evidence for the development of metasomatism in the process of weathering-pedogenesis of numerous carbonate rocks. This paper also has expounded for the first time and systematically the mechanism of metasomatism involved in the process of weathering pedogenesis of carbonate rocks and proposed the sequence of mineral metasomatic evolution in the process of weathering-pedogenesis of carbonate rocks.

  6. Surface microtextures of quartz grains from the central coast of Tamil Nadu

    Udayaganesan, P.; Angusamy, N.; Gujar, A.R.; Rajamanickam, G.V.

    Cuddalore to Nagapattinam, the entire foreshore and backshore is found to be carpeted by rich concentrations of black sands and garnets. In Karaikal, the backshore is wider for about 850 m (Table 1). The heavy mineral enriched zones are characterized.... Barring these studies, scarcely any study has been undertaken on the surface micro textures of quartz grains from beach sediments. The present study aims to characterize the microtextures of quartz grains from central Tamil Nadu coast, which is marked...

  7. Analysis of microstructure and microtexture in grain-oriented electrical steel (GOES) during manufacturing process

    Volodarskaja, A.; V. Vodárek; Holešinský, J.; Š. Miklušová; Žáček, O.

    2015-01-01

    The final Goss texture in grain-oriented electrical steels (GOES) is affected by microstructure evolution and inheritance during the whole production process. This paper presents the results of detailed microtexture and microstructure investigations on GOES after the basic steps of the industrial AlN + Cu manufacturing process: hot rolling, first cold rolling + decarburization annealing, second cold rolling and final high temperature annealing. Microstructure studies showed that a copper addi...

  8. Teasing apart the contributions of hard dietary items on 3D dental microtextures in primates.

    Calandra, Ivan; Schulz, Ellen; Pinnow, Mona; Krohn, Susanne; Kaiser, Thomas M

    2012-07-01

    3D dental microtexture analysis is a powerful tool for reconstructing the diets of extinct primates. This method is based on the comparison of fossils with extant species of known diet. The diets of primates are highly diversified and include fruits, seeds, grass, tree leaves, bark, roots, tubers, and animal resources. Fruits remain the main component in the diets of most primates. We tested whether the proportion of fruit consumed is correlated with dental microtexture. Two methods of microtexture analysis, the scale-sensitive fractal analysis (SSFA) and the Dental Areal Surface Texture Analysis (DASTA; after ISO/FDIS 25178-2), were applied to specimens of eight primate species (Alouatta seniculus, Gorilla gorilla, Lophocebus albigena, Macaca fascicularis, Pan troglodytes, Papio cynocephalus, Pongo abelii, Theropithecus gelada). These species largely differ in the mean annual proportion of fruit (from 0 to 90%) in their diet, as well as in their consumption of other hard items (seeds, bark, and insect cuticles) and of abrasive plants. We find the complexity and heterogeneity of textures (SSFA) to correlate with the proportion of fruits consumed. Textural fill volume (SSFA) indicates the proportion of both fruits and other hard items processed. Furthermore, anisotropy (SSFA) relates to the consumption of abrasive plants like grass and other monocots. ISO parameters valley height, root mean square height, material volume, density of peaks, and closed hill and dale areas (DASTA) describe the functional interaction between food items and enamel facets during mastication. The shallow, plastic deformation of enamel surfaces induced by small hard particles, such as phytoliths or dust, results in flat microtexture relief, whereas the brittle, deep fracture caused by large hard items such as hard seeds creates larger relief. PMID:22705031

  9. Silicon etch process

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  10. Multi-scale microstructural characterization of micro-textured Ti-6Al-4V surfaces

    Soboyejo, W.O.; Mercer, C.; Allameh, S.; Nemetski, B. [Princeton Materials Inst., NJ (United States). Dept. of Mechanical and Aerospace Engineering; Marcantonio, N. [Brown Univ., Providence, RI (United States). Div. of Engineering; Ricci, J.L. [Univ. of Medicine and Dentistry of New Jersey, Newark, NJ (United States). Dept. of Orthodontics

    2001-07-01

    This paper presents the results of a multi-scale microstructural characterization of micro-textured Ti-6Al-4V surfaces that are used in biomedical implants. The hierarchies of substructural and microstructural features associated with laser micro-texturing, mechanical polishing and surface blasting with alumina pellets are elucidated via atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and optical microscopy (OM). The nano-scale roughness profiles for the different surface textures are characterized via AFM. Sub-micron precipitates and dislocation substructures associated with wrought processing and laser processing are revealed by TEM. OM and SEM micro- and mesoscale images of the groove structures and then described before discussing the implications of the result for the optimization of laser processing schemes. The implications of the results are examined for the fabrication of micro-textured surfaces that will facilitate the self organization of proteins, and the attachment of mammalian cells to the Ti-6Al-4V surfaces in biomedical implants. (orig.)

  11. Plasma etching an introduction

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  12. Dry etching for microelectronics

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  13. Etching in microsystem technology

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  14. Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

    Tan, Hairen; Psomadaki, Efthymia; Isabella, Olindo; Fischer, Marinus; Babal, Pavel; Vasudevan, Ravi; Zeman, Miro; Smets, Arno H. M.

    2013-10-01

    Micro-textures with large opening angles and smooth U-shape are applied to nanocrystalline silicon (nc-Si:H) solar cells. The micro-textured substrates result in higher open-circuit-voltage (Voc) and fill-factor (FF) than nano-textured substrates. For thick solar cells, high Voc and FF are maintained. Particularly, the Voc only drops from 564 to 541 mV as solar cell thickness increases from 1 to 5 μm. The improvement in electrical performance of solar cells is ascribed to the growth of dense nc-Si:H layers free from defective filaments on micro-textured substrates. Thereby, micromorph tandem solar cells with an initial efficiency of 13.3%, Voc = 1.464 V, and FF = 0.759 are obtained.

  15. In situ testing of metal micro-textured thermal interface materials in telecommunications applications

    A metal micro-textured thermal interface material (MMT-TIM) has been developed to address the shortcomings of conventional TIMs for Remote Radio Heat (RRH) applications. The performance of the MMT-TIM was characterized in-situ by monitoring the temperatures of the dominant heat generating devices in an RRH Power Amplifier for a fixed input power. Measurements show that the use of the MMT-TIM results in significantly lower devices temperatures than achieved with the conventionally used graphite pads with a maximum temperature drop of 14.9 °C observed. The effect of power cycling on the long term performance trends is also examined.

  16. The Prediction of Pavement Surface Aggregate Wear and Microtextural Polishing - Progress Report (April 2013)

    NAATADMAJA , Adélia

    2013-01-01

    This report explains the work that the author has done in IFSTTAR, Nantes, France in April 2013. The goals that are aimed to be achieved during her stay are: · Polish and measure the skid resistance values of New Zealand aggregates with the Wehner/Schulze (W/S) device; · Develop a skid resistance deterioration model from the skid resistance values; · Analyse the 3D images of aggregates that are captured by using the InfiniteFocus; · Assess the effects of microtexture evolution on ...

  17. The Prediction of Pavement Surface Aggregate Wear and Microtextural Polishing - Progress Report (March 2013)

    NATAADMADJA, Adelia

    2013-01-01

    This report explains the work that the author has done in IFSTTAR, Nantes, France in March 2013. The goals that are aimed to be achieved during her stay are: · Polish and measure the skid resistance values of New Zealand aggregates with the Wehner/Schulze (W/S) device; · Develop a skid resistance deterioration model from the skid resistance values; · Analyse the 3D images of aggregates that are captured by using the InfiniteFocus; · Assess the effects of microtexture evolution on ...

  18. Texture and microtexture evolution in an ultra-low carbon steel during recrystallization

    Novillo, E.; Petite, M.M.; Bocos, J.L.; Iza-Mendia, A.; Gutierrez, I. [CEIT (Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa), TECNUN, Paseo Manuel de Lardizabal 15, 20018 Donostia-San Sebastian (Spain)

    2003-08-01

    Recrystallization texture and microtexture in a cold-rolled ultra-low-carbon steel was investigated using X-ray diffraction and electron-back-scattered diffraction based orientation imaging microscopy (ESBD/OIM). Special emphasis was put on the grain coarsening of various texture components during recrystallization: grain selection with an excess in size and number of {l_brace}111{r_brace} recrystallized grains was observed, generating in the final stages of recrystallization a strong {gamma}-fibre that results in good drawing properties. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  19. Microtexture analysis of cold-rolled and annealed twinning-induced plasticity steel

    The microtexture evolution of cold-rolled and isochronally annealed Fe-24Mn-3Al-2Si-1Ni-0.06C twinning-induced plasticity steel is investigated by electron back-scattering diffraction. Novel deconstruction techniques are applied to cold-rolled and partially recrystallized maps. The formation of cold-rolling texture via composite slip/twin deformation pattern is corroborated by the relatively random spatial distribution of twinned and untwinned grains. Whereas the orientations of the newly nucleated grains are similar to the deformation texture, orientation-dependent, stored energy and second-order twinning contribute to the end-recrystallization texture.

  20. Plasma etching in semiconductor fabrication

    The contents of this book are: Introduction; Plasma Excitation and Reactor Design; Silicon and Silicon Dioxide Etching in Plasmas; Aluminium Etching in Chlorinated Plasmas; The Plasma Etching of III/V Compound Semiconductors; Operating Frequency and the Plasma; Probe Characteristics and Plasma Measurements of an Electrotech Planar Plasma Etcher; The RF Voltage/Current Characteristics and Related DC Negative Bias Properties of an Electrotech Flat Bed Planar Plasma Etcher; and Methods of Reducing the Etch Rate of Positive Photoresist Masks During Plasma Etching

  1. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber. It was...

  2. The study of road surface micro-texture's effects for the pavement's decontamination by high pressure water washing

    In the result of “decontamination technical demonstration project” by Ministry of the Environment, it has became clear that the effect variation is larger in high pressure water washing method, compared with others in road surface decontamination technology. In this study, we have hypothesized the fact at the difference of micro-texture of the road surface, by carrying out high pressure water washing method in different kinds of road surfaces and verified the relation between washing efficiency and micro-texture road surface. Positive correlation has admitted between the washing number of times and radiation reduction rate and the trend of primary regression equation (i.e. radiation reduction rate per washing time) is indicating that decreasing tendency of radiation carried by the increasing of micro-texture of the road surface. Here, we proposed the method to estimated essential washing number of times to achieve the targeted radiation reduction rate from the relation of that trend and micro-texture of the road surface. (author)

  3. 热酸蚀刻对氧化锆陶瓷初期粘结强度的影响%Effect of hot acid etching on initial bond strength of zirconia to resin

    许少平; 印厚才; 谢海峰

    2012-01-01

    目的:考察两种酸液在加热条件下蚀刻处理对氧化锆陶瓷与树脂初期粘结强度的影响.方法:制作32个氧化锆陶瓷片,分为4组分别进行表面处理.A组:喷砂;B组:喷砂+H2SO4和(NH4)2SO4混合液煮沸下处理30 min+Clearfil Ceramic Primer涂底剂;C组:喷砂+HF和HNO3混合液煮沸下处理30 min+Clearfil Ceramic Primer涂底剂;D组:喷砂+Clearfil Ceramic Primer涂底剂.制备复合树脂柱,以树脂水门汀将其粘固于处理过的氧化锆陶瓷表面.粘结试件水储24 h后,测试剪切粘结强度.扫描电镜观察各处理组的陶瓷表面.结果:A组的粘结强度值最低,D组其次,B、C组的粘结强度值较高且无显著性差异.扫描电镜观察发现两种酸蚀刻后形成了与喷砂不同的粗化表面形态.结论:两种酸液在加热条件下能够对氧化锆陶瓷进行蚀刻粗化,同时可对其初期粘结强度起到增强作用.%Objective:To investigate the initial bond strength of zirconia etched with two kinds of hot acid mixtures to resin. Methods: Total 32 zirconia ceramic blocks were manufactured and divided into 4 groups received different surface treatments. Group A, sandblasting; group B, sandblasting combined with hot H2SO4 and (NH)2SC4 mixture etching 30 min, and applying Clearfil Ceramic Primer; group C, sandblasting combined with HF and HNO3 mixture etching 30 min, and applying Clearfil Ceramic Primer; group D, sandblasting and applying Clearfil Ceramic Primer. Thirty-two composite resin columns were prepared and cemented on the pre-treated zirconia blocks with composite resin cement. Shear bond strength (SBS) test were executed after water storage for 24 hours. The zirconia surfaces treated with different treatments were observed with a scanning electron microscope. Results: The SBS values were lowest in group A, and higher in group B and group C, among 4 groups, and had no significant difference between group B and group C. There were differences in surface

  4. Effect of Pd ions in the chemical etching solution

    Guixiang Wang; Ning Li; Deyu Li

    2007-01-01

    The acrylonitrile-butadiene-styrene (ABS) surface was etched by dipping it into chromic acid-sulfuric acid containing a trace amount of palladium. The surface roughness, activity, and valence bond were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results showed that with the increase of Pd concentration in the etching solution the ABS surface roughness reduced. The ratio of O to C increases and forms a large amount of O=C-O functional groups by dipping into Pd contained etching solution, thus the amount of colloids palladium adsorption increases. The carboxyl group acts as the adsorption site for the Pd/Sn catalyst.

  5. Effect of an Indirect Composite Resin Surface Treatment with Two Types of Lasers: Nd: YAG, Er:YAG and Acid Etching on the Microshear Bond Strength of a Resin Cement

    AR Daneshkazemi

    2014-04-01

    Conclusion: The two Er:YAG and Nd: YAG lasers increased the bond strength. Though etching alone had no significant effect, the application of the laser Nd:YAG with etching increased the bond strength.

  6. Pulse modulated microwave plasma etching

    The authors report the etching characteristics of silicon and silicon dioxide studied in an anisotropic microwave plasma etching system having a variably pulsed microwave source. Pulse frequency, as well as pulse duty cycle, can be varied on the microwave source. Earlier work done in isotropic rf systems suggests that etch rate and quality may be affected positively by pulse modulation. Electron-cyclotron resonance heating is used so that the process gas (sulfur hexafluoride) can be more efficiently ionized, with the resulting ions and free radicals from the plasma then etching the silicon substrate or the silicon dioxide on the substrate. Characteristics being examined include etch rate, etch anisotropy, and etching selectivity between silicon and silicon dioxide. The design of the microwave plasma etching system, including the variable pulsed microwave source, are presented along with preliminary results

  7. Dry etching technology for semiconductors

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  8. Shock-thermal history of Kavarpura IVA iron: Evidences from microtextures and nickel profiling

    Ray, Dwijesh; Ghosh, S.; Murty, S. V. S.

    2015-11-01

    We classify Kavarpura iron (fell in August, 2006, in Rajasthan, India), an inclusion-free member of high-Ni IVA group. Widmanstätten pattern and finger-cellular plessites textures characteristic of IVA group are present in Kavarpura. Symmetric and asymmetric textural zoning within the cloudy taenite and plessite refer to long term martensitisation process with mean metallographic cooling rate of 200 °C/Ma. Imprints of variable shock pressure domains (Neumann bands and shock hatched ε kamacite) suggest alteration by up to 600 kb shock pressure. Degeneration of cellular plessites, bending of finger plessites and plastic flowage of taenites bear textural evidences corresponding to post-shock annealing which is further confirmed by Ni profiles across the cloudy taenites and plessites under high shock pressure domains. Based on microtextural evidences and Ni profiling, we suggest Kavarpura had cooled at steady state and subsequently suffered multiple impacts.

  9. Analysis of microstructure and microtexture in grain-oriented electrical steel (GOES during manufacturing process

    A. Volodarskaja

    2015-10-01

    Full Text Available The final Goss texture in grain-oriented electrical steels (GOES is affected by microstructure evolution and inheritance during the whole production process. This paper presents the results of detailed microtexture and microstructure investigations on GOES after the basic steps of the industrial AlN + Cu manufacturing process: hot rolling, first cold rolling + decarburization annealing, second cold rolling and final high temperature annealing. Microstructure studies showed that a copper addition to GOES affected solubility of sulphides. Copper rich sulphides dissolved during hot rolling and re-precipitated during decarburization annealing. An intensive precipitation of AlN and Si3N4 took place during decarburization annealing. No ε - Cu precipitation was detected. After high temperature annealing the misorientation of individual grains reached up to 8°.

  10. Microtexture of constituent phases in a heavily warm- rolled and annealed duplex stainless steel

    Zaid, M.; Bhattacharjee, P. P.

    2015-04-01

    Evolution of microtexture during isothermal annealing of a heavily warm-rolled Fe- 0.08%C-24.18%Cr-10.5%Ni duplex stainless steel (DSS) having approximately equal volume fraction of ferrite and austenite was investigated in the present work. The DSS was warm-rolled to ∼90% reduction in thickness at three different temperatures, namely, 225°C, 425°C and 625°C followed by isothermal annealing at 1175°C for different length of time. Austenite showed pure metal or copper type texture at different warm-rolling temperatures. In contrast, the texture of ferrite in different warm-rolled DSS revealed the presence of RD (RD//) and ND (ND//) fibers. The annealing texture of austenite showed retention of the deformation texture components while ferrite revealed strong RD-fiber.

  11. Microstructure and microtexture evolution during strain path changes of an initially stable Cu single crystal

    Paul, H., E-mail: nmpaul@imim-pan.krakow.pl [Polish Academy of Sciences, Institute of Metallurgy and Materials Science, 25 Reymonta St., 30-059 Krakow (Poland)] [Opole University of Technology, Mechanical Department, 5 Mikolajczyka St., 45-271 Opole (Poland); Maurice, C.; Driver, J.H. [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 Cours Fauriel, 42023 Saint-Etienne, Cedex 2 (France)

    2010-05-15

    The microstructure and microtexture evolution in a deformed Goss oriented crystal were characterized after a sample rotation and consequent change in strain path, over a range of scales by optical microscopy, high resolution scanning electron microscopy equipped with field emission gun and electron packscattered diffraction facilities and transmission electron microscopy orientation mapping. High purity copper single crystals with initial Goss{l_brace}1 1 0{r_brace}<0 0 1> orientation were channel-die compressed 59% to develop a homogeneous structure composed of two sets of symmetrical primary microbands. New samples with ND rotated orientations of Goss{l_brace}1 1 0{r_brace}<0 0 1>, brass{l_brace}1 1 0{r_brace}<1 1 2>, M{l_brace}1 1 0{r_brace}<1 1 1> and H{l_brace}1 1 0{r_brace}<0 0 1>, were then cut out and further compressed in channel-die by a few per cent. The change in flow stress could be correlated with the change in dislocation substructure and microtexture, particularly along shear bands initiated by the strain path change. In the H{l_brace}1 1 0{r_brace}<0 1 1> and M{l_brace}1 1 0{r_brace}<1 1 1> orientations, the flow stress increased by Taylor factor hardening then decreased by intense macroscopic shear band (MSB) formation. In the softer brass orientation and in the absence of Taylor factor hardening, more diffuse MSB formation occurred. The local rotations in the band were used to deduce the possible local slip systems initiated during the strain path change.

  12. Effect of Addition of Al on Crystal Structure Microtexture and Magnetostriction Coefficient in Tb0.3 Dy0.7 Fe1.95 Alloy

    Jiang Liping; Zhao Zengqi; Wu Shuangxia; Huang Jimin; Zuo Liang

    2004-01-01

    The effect of addition of A1 on crystal structure microtexture and magnetostrictioncoefficient in Tb0.3Dy0.7Fe1.95 alloy were studied.The results show that addition of A1 does not change crystal structure of alloy and the precipitates increase in the microtexture as addition of A1 increases.At a certain magnetic field, magnetostriction coefficient decreased as addition of Al increased.

  13. Orthodox etching of HVPE-grown GaN

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  14. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  15. Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

    Liao, Xiaoyan; Zhuang, Yun; Borucki, Leonard J.; Cheng, Jiang; Theng, Siannie; Ashizawa, Toranosuke; Philipossian, Ara

    2013-01-01

    The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000TM K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.

  16. Wetting state on hydrophilic and hydrophobic micro-textured surfaces: Thermodynamic analysis and X-ray visualization

    In this study, the wetting state on hydrophobic and hydrophilic micro-textured surfaces was investigated. High spatial resolution synchrotron X-ray radiography was used to overcome the limitations in visualization in previous research and clearly visualize the wetting state for each droplet under quantified surface conditions. Based on thermodynamic characteristics, a theoretical model for wetting state depending on the chemical composition (intrinsic contact angle) and geometrical morphology (roughness ratio) of the surfaces was developed

  17. Observation of etch pits in Fe-36wt%Ni Invar alloy

    Dong-zhu Lu; Min-jie Wu

    2014-01-01

    To indirectly investigate the dislocation behavior of Fe−36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL deionized water for 2 min. Etch pits in the etched surfaces were observed. All the etch pits in one specific grain exhibited similar shapes, which are closely related to the grain orienta-tions. These etch pits were characterized as dislocation etch pits. It was observed that etch pits arranged along grain boundaries, gathered at grain tips and strip-like etch pit clusters passed through a number of grains in the pure Invar specimens. After the addition of a small amount of alloying elements, the identification of a single dislocation etch pit is challenging compared with the pure Invar alloy. Thus, the observa-tion of etch pits facilitates the investigation on the dislocation behavior of the pure Invar alloy. In addition, alloying elements may affect the densities and sizes of etch pits.

  18. Plasma etching using hydrogen bromide addition

    The disclosure relates to a plasma etch chemistry which allows a near perfectly anisotropic etch of silicon. A Cl-containing compound such as HCl has HBr added thereto, readily allowing the anisotropic etching of silicon. This is due to the low volatility of SiBr4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon passivates them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon

  19. SEM analysis of the acid-etched enamel patterns promoted by acidic monomers and phosphoric acids Avaliação em MEV do padrão de condicionamento do esmalte dental promovido por monômeros ácidos e o ácido fosfórico

    Mirela Sanae Shinohara

    2006-12-01

    Full Text Available ABSTRACT OBJECTIVE: Although self-etching bonding systems (SES are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA on intact (IN and ground (GR enamel surface. MATERIALS AND METHODS: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragments were obtained from each tooth. Half of the fragments were ground using 600-grit SiC paper and the other half remained intact. The fragments were randomly assigned into 22 groups, according to the texture of enamel surface (IN and GR and the technique to etch the enamel (34% FA, 35% FA, AdheSE primer; Brush & Bond; Clearfil Protect Bond primer; iBond; One-up Bond F; OptiBond Solo Plus primer; Tyrian SPE primer; Unifil Bond primer and Xeno III. Conditioners were applied to IN and GR enamel surfaces, according to the manufacturer's instructions. Specimens etched with phosphoric acids were washed with water, while the surfaces treated with SES were submitted to alternate rinsing with alcohol and acetone. The specimens were dried, sputter-coated and examined under a scanning electron microscope. RESULTS: For both IN and GR enamel surfaces, the EP of 34 and 35% FA was deeper and more homogeneous in comparison to EP of SES, except for Tyrian SPE. The acidic monomer action of self-etching systems was more effective on GR enamel. CONCLUSION: Most of the SES are less aggressive than phosphoric acid etchants and their etching effects were reduced on intact enamel surfaces.OBJETIVO: Apesar dos sistemas adesivos autocondicionantes (SAA serem indicados para aplicação no esmalte dental, preocupação tem sido relatada com relação a sua efetividade. O objetivo deste estudo foi avaliar o padrão de condicionamento ácido (PCA promovido por nove SAA e comparar ao PCA

  20. Evaluation of shear bond strength of orthodontic brackets bonded with Er-YAG laser etching

    S Hamid Raji

    2012-01-01

    Results: The mean shear bond strength of the teeth lased with 150 mj was 12.26 ± 4.76 MPa, which was not significantly different from the group with acid etching (15.26 ± 4.16 MPa. Irradiation with 100 mj resulted in mean bond strengths of 9.05 ± 3.16 MPa, which was significantly different from that of acid etching (P < 0.001. Conclusions: laser etching at 150 and 100 mj was adequate for bond strength but the failure pattern of brackets bonded with laser etching is dominantly at adhesive - enamel interface and is not safe for enamel during debonding.

  1. Microtensile bond strength of a resin-based fissure sealant to Er,Cr:YSGG laser-etched primary enamel.

    Sungurtekin-Ekci, Elif; Oztas, Nurhan

    2016-05-01

    The aim of this study was to evaluate the effect of Er,Cr:YSGG laser pre-treatment alone, or associated with acid-etching, on the microtensile bond strength of a resin-based fissure sealant to primary enamel. Twenty-five human primary molars were randomly divided into five groups including (1) 35 % acid etching, (2) 2.5-W laser etching, (3) 3.5-W laser etching, (4) 2.5-W laser etching + acid etching, and (5) 3.5-W laser etching + acid etching. Er,Cr:YSGG laser was used at a wavelength of 2.780 nm and pulse duration of 140-200 μs with a repetition rate of 20 Hz. Following surface pre-treatment, the fissure sealant (ClinPro™, 3M Dental Products) was applied. Each tooth was sectioned and subjected to microtensile testing. Kruskal-Wallis test was used for statistical analysis. The level of significance was set at p < 0.05. The microtensile bond strength values of group 1 were significantly higher than those of group 2, while no statistically significant difference was detected between groups 1, 3, 4, and 5. It was concluded that 3.5-W laser etching produced results comparable to conventional acid etching technique, whereas 2.5-W laser etching was not able to yield adequate bonding performance. PMID:25847685

  2. Numerical modelling of microdroplet self-propelled jumping on micro-textured surface

    Attarzadeh, S. M. Reza; Dolatabadi, Ali; Chun Kim, Kyung

    2015-11-01

    Understanding various stages of single and multiple droplet impact on a super-hydrophobic surface is of interest for many industrial applications such as aerospace industry. In this study, the phenomenon of coalescence induced droplets self-propelled jumping on a micro-textured super-hydrophobic surface is numerically simulated using Volume of Fluid (VOF) method. This model mimics the scenario of coalescing cloud-sized particles over the surface structure of an aircraft. The VOF coupled with a dynamic contact angle model is used to simulate the coalescence of two equal size droplets, that are initially placed very closed to each other with their interface overlapping with each other's which triggers the incipience of their coalescence. The textured surface is modeled as a series of equally spaced squared pillars, with 111° as the intrinsic contact angle all over the solid contact area. It is shown that the radial velocity of coalescing liquid bridge is reverted to upward direction due to the counter action of the surface to the basal area of droplet in contact. The presence of air beneath the droplet inside micro grooves which aimed at repelling water droplet is also captured in this model. The simulated results are found in good agreement with experimental observations. The authors gratefully acknowledge the financial support from Natural Sciences and Engineering Research Council of Canada (NSERC), Consortium de Recherche et d'innovation en Aerospatiale au Quebec (CRIAQ), Bombardier Aerospace, Pratt Whitney Canada.

  3. Mineralogical and microtextural characterization of ''gel-zircon'' from the Manibay uranium mine, Kazakhstan

    Gel-zircon, an unusual Zr-silicate phase from the Manibay uranium mine, northern Kazakhstan, was studied using X-ray diffraction (XRD), electron microprobe energy dispersive X-ray spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM). XRD results indicate that gel-zircon is mostly amorphous and occurs with numerous impurity phases. Microprobe EDS results indicate a UO2 content up to 9.14 wt.% HRTEM images revealed that the microtexture of gel-zircon consists of nanocrystallites of zircon, 2--10 nm in size, in a dominantly amorphous matrix. Despite the U-Pb age of 420 ± 25 my and the lack of significant crystallinity, the gel-zircon is an apparently chemically durable phase. Leaching of uranium ores which contain gel-zircon as the major U-bearing phase is impossible using existing uranium plant technologies. The alpha-decay dose, 2.64 displacements per atom (dpa), corresponding to the age of gel-zircon is much higher than that (0.5 dpa) required to cause metamictization of crystalline zircon. However, the morphology of gel-zircon which occurs as veins up to 5 mm thick and tens of mm long does not indicate initial crystallinity. Initially crystalline natural zircons often preserve their crystal morphology after metamictization. This amorphous phase is analogous to the highly damaged state characteristic of zircon proposed as a waste form for the disposition of excess weapons plutonium

  4. Plasma etching of cesium iodide

    Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 deg. C, the minimum ion-bombardment energy for etching is Ei∼50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ∼40 nm/min at 40 deg. C to 380 nm/min at 330 deg. C. The temperature dependence corresponds to an activation energy of 0.13±0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides

  5. Patterning of the Oxide Mask for Nanowire Growth by Dry Etching

    Ueland, Åsmund Stenhaug

    2015-01-01

    In this master s thesis it is investigated how inductively coupled plasma reactive-ion etching, in combination with hydrofluoric acid wet etching, can be used to produce consistent and reliable nanoscaled holes with a high aspect ratio and a flat bottom in a silicon dioxide mask covering a silicon substrate. The inductively coupled plasma reactive-ion etching technique is found to be very promising, however, more work need to be put into finding the right electron resist for the process. The ...

  6. 17.6% Conversion Efficiency Multicrystalline Silicon Solar Cells Using the Reactive Ion Etching with the Damage Removal Etching

    Ji-Myung Shim; Hyun-Woo Lee; Kyeong-Yeon Cho; Jae-Keun Seo; Ji-Soo Kim; Eun-Joo Lee; Jun-Young Choi; Dong-Joon Oh; Jeong-Eun Shin; Ji-Sun Kim; Ji-Hyun Kong; Soo-Hong Lee; Hae-Seok Lee

    2012-01-01

    For lower reflectance, we applied a maskless plasma texturing technique using reactive ion etching (RIE) on acidic-textured multicrystalline silicon (mc-Si) wafer. RIE texturing had a deep and narrow textured surface and showed excellent low reflectance. Due to plasma-induced damage, unless the RIE-textured surfaces have the proper damage removal etching (DRE), they have a drop in V oc and FF. RIE texturing with a proper DRE had sufficiently higher short circuit current (Isc) than acidic-text...

  7. Martian surface microtexture from orbital CRISM multi-angular observations: A new perspective for the characterization of the geological processes

    Fernando, J.; Schmidt, F.; Douté, S.

    2016-09-01

    The surface of Mars has a high morphological and mineralogical diversity due to the intricacy of external, internal processes, and exchanges with the atmosphere, the hydrosphere and the cryosphere. In particular, liquid water played an important role in surface evolution. However, the origin, duration and intensity of those wet events have been highly debated, especially in the clay-bearing geological units. Similarly, questions still remain about magma crystallization and volatile quantity of the dominant basaltic crust. In this work, six sites having hydrated minerals, salts and basaltic signatures (i.e., Mawrth Vallis, Holden crater, Eberswalde crater, Capri mensa, Eridania basin, Terra Sirenum) are investigated in order to better characterize the geological processes responsible for their formation and evolution (e.g., fluvial, lacustrine, in situ weathering, evaporitic, volcanic and aeolian processes). For that purpose, we use orbital multi-angular measurements from the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) instrument on-board the Mars Reconnaissance Orbiter spacecraft to analyze the manner in which light is scattered by the surface materials (photometry) in the near-infrared range (at 750 nm). The surface bidirectional reflectance depends on the composition but also on the surface microtexture such as the grain size distribution, morphology, internal structure and surface roughness, tracers of the geological processes. The Hapke semi-analytical model of radiative transfer in granular medium is used to model the surface bidirectional reflectance estimated at 750 nm from the orbital measurements after an atmospheric correction. The model depends on different radiative properties (e.g., single scattering albedo, grain phase function and regolith roughness) related to the surface composition and microtexture. In particular previous laboratory works showed that the particle phase function parameters, which describe the characteristics of the

  8. The influence of the microtexture, corrugation inclination angle, and perforation of corrugated surfaces on the character of liquid spreading

    Pavlenko, A. N.; Li, X.; Li, H.; Gao, X.; Volodin, O. A.; Surtaev, A. S.; Serdyukov, V. S.

    2015-08-01

    The spreading of liquid nitrogen film over the surface of single structured packing elements has been experimentally studied. Comparative analysis of experimental data showed the influence of a horizontal microtexture, perforation, and inclination angle of large corrugation ribs on the character of liquid film spreading over the corrugated surface at various values of the film-flow Reynolds number. Experimental data are also presented on the dependence of the relative fraction of liquid retained in a single irrigated channel in corrugated plates of various thicknesses on the extent of irrigation.

  9. Recrystallized parylene as a mask for silicon chemical etching

    Lo, Hsi-wen; Kuo, Wen-Cheng; Yang, Yao-Joe; Tai, Yu-Chong

    2008-01-01

    This paper presents the first use of recrystallized parylene as masking material for silicon chemical etch. Recrystallized parylene was obtained by melting parylene C at 350°C for 2 hours. The masking ability of recrystallized parylene was tested in HNA (hydrofluoric acid, nitric acid and acetic acid) solution of various ratios, KOH (potassium hydroxide) solution and TMAH (tetramethylammonium hydroxide) at different temperatures and concentrations. It is found that interf...

  10. Bond strength with various etching times on young permanent teeth

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  11. New deep glass etching technology

    Bu, M.; Melvin, T; Ensell, G; J. S. Wilkinson; Evans, A.G.R.

    2003-01-01

    A new masking technology useful for wet etching of glass, to a depth of more than 300 ?m, is reported; multilayers of metal in combination with thick SPRT220 photoresist, are used. This new method was successfully developed for fabricating a 200 ?m thick diaphragm for a micro peristaltic pump. Various mask materials, which can be patterned by standard photolithography and metal etching processes, were investigated. The main advantage of this newly developed method was the application of hydro...

  12. Effects of TiO2 sandblasted and acid-etched titanium on expression of bone morphogenetic protein 2 in human osteoblasts%TiO2喷砂酸蚀处理对钛片表面人成骨细胞BMP-2表达水平的影响

    陆斌; 李建武; 郭义; 杨艳

    2013-01-01

    目的 探讨钛片经过TiO2喷砂酸蚀处理后对人成骨细胞系MG63细胞骨形态发生蛋白2(bone morphogenetic protein,BMP-2)表达水平的影响.方法 将钛片分为3组进行处理:机械打磨组、喷砂组及喷砂酸蚀组,分别进行机械打磨、TiO2喷砂和喷砂酸蚀处理.将人成骨细胞系MG63细胞接种于钛片表面,采用实时定量聚合酶链反应(real-time polymerase chain reaction,RT-PCR)、Western blot检测BMP-2 mRNA及蛋白表达水平.结果 喷砂组及喷砂酸蚀组BMP-2 mRNA及蛋白水平增高,与机械打磨组相比差异有统计学意义(P<0.05),而喷砂组与喷砂酸蚀组之间差异无统计学意义(P>0.05).结论 使用经过TiO2喷砂及喷砂酸蚀处理的钛片进行人成骨细胞培养可促进BMP-2表达.%Objective To explore the effect of TiO 2 sandblasted and acid -etched titanium on the expression of bone morphogenetic pro -tein 2 (BMP-2) in human MG63 cells.Methods Titanium discs (15 mm diameter and 1 mm thickness ) were divided into 3 groups: machine polished group , sandblasted group , sandblasted and acid -etched group.Titanium discs were treated with mechanical polishing , TiO2 sandblasting, sandblasting and acid-etching in three groups , respectively.MG63 cells were cultured on the titanium.The mRNA and protein expression of BMP-2 in MG63 cells were analyzed by real-time polymerase chain reaction (RT-PCR) and Western blot.Results The mRNA and protein levels of BMP -2 were significantly higher in sandblasted group and sandblasted and acid -etched group than in machine polished group ( P 0.05 ).Conclusion After sandblasting and acid -etching, titanium could promote the expression of BMP-2 in human osteoblast.

  13. Graphene-Assisted Chemical Etching of Silicon Using Anodic Aluminum Oxides as Patterning Templates.

    Kim, Jungkil; Lee, Dae Hun; Kim, Ju Hwan; Choi, Suk-Ho

    2015-11-01

    We first report graphene-assisted chemical etching (GaCE) of silicon by using patterned graphene as an etching catalyst. Chemical-vapor-deposition-grown graphene transferred on a silicon substrate is patterned to a mesh with nanohole arrays by oxygen plasma etching using an anodic- aluminum-oxide etching mask. The prepared graphene mesh/silicon is immersed in a mixture solution of hydrofluoric acid and hydro peroxide with various molecular fractions at optimized temperatures. The silicon underneath graphene mesh is then selectively etched to form aligned nanopillar arrays. The morphology of the nanostructured silicon can be controlled to be smooth or porous depending on the etching conditions. The experimental results are systematically discussed based on possible mechanisms for GaCE of Si. PMID:26473800

  14. Graphene nanoribbons: relevance of etching process

    Simonet, Pauline; Bischoff, Dominik; Moser, Annina; Ihn, Thomas; Ensslin, Klaus

    2015-01-01

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle ch...

  15. Heavy Minerals in Palaeotsunami Deposits: Assemblages, Spatial Distribution and Microtextural Imprints

    Costa, P. J.; Andrade, C.; Cascalho, J.; Dawson, A. G.; Freitas, M. C.; Dawson, S.; Mahaney, W. C.

    2013-12-01

    more likely source areas. In addition, preliminary results of SEM analysis of microtextural features imprinted in the surface of heavy minerals indicate an increase in the number of mechanical marks in the surface of palaeotsunami grains when compared with potential source materials (beach, dune, inshore and offshore samples). This work further reveals the potential to use heavy minerals as a complementary sedimentological tool in the study of palaeotsunami deposits.

  16. AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method

    Shimizu, Tomohiro; Yamaguchi, Takuya; Inoue, Fumihiro; Inada, Mitsuru; Shingubara, Shoso

    2012-11-01

    The morphological changes of a nanostructured Si surface prepared by metal assisted etching were investigated. We used a mixture of silver nitrate (AgNO3) and hydrofluoric acid (HF) as an electroless plating bath of Ag, as well as an etching solution of Si. With a change in silver ion concentration in the etching solution, three types of etched Si nanostructures were observed: “nanowire”, “porous wall”, and “polished”. We developed a phase diagram of the morphology of the etched Si surface. With increasing concentration of AgNO3 in the etching solution, the surface morphology of etched Si changes from nanowire to porous wall, and finally, polished for regardless of Si resistivity.

  17. Plasma-induced etching of silicon surfaces

    In this work, p-type silicon surface was etched to (100) crystalline direction using plasma-induced etching technique. The structural characteristics of the etched surface were presented and studied. The optimum conditions to achieve etching process on p-type silicon surface are determined by 750 W processing power and 15mtorr gas pressure required for generation of plasma. According to the reasonable quality of the obtained samples and comparing to other techniques, the plasma-induced etching is simple and low cost technique as well as large dimensions of etched substrates can be produced. (authors)

  18. Nanostructured porous silicon by laser assisted electrochemical etching

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  19. 喷砂酸蚀复合MAO纯钛表面对成骨细胞粘附的影响%Effect of sandblast-acid etched titanium surface modified by micro-arc oxidation on osteoblast adhesion

    张佩芬; 何绮芬; 邓飞龙

    2009-01-01

    目的:研究喷砂酸蚀(sandblast-acid etch,SA)复合微弧氧化(micro arc oxidation,MAO)纯钛表面对成骨细胞粘附的影响,探讨SA与MAO复合处理技术在钛种植体表面改性中的价值.材料和方法:将纯钛按表面处理方法的不同分为4组:MAO-SA组为250μm直径Al2O3颗粒喷砂HF酸蚀后MAO处理,MAO组为单纯MAO处理,MAO-HT组为MAO处理后水热处理8h,SM组为光滑组.通过扫描电镜、激光共聚焦显微镜观察、Bradford蛋白定量法、四唑盐比色法和实时荧光定量PCR反应检测分析各表面对蛋白吸附、成骨细胞形态和骨架改建、粘附水平、粘附强度以及整合素表达的影响.数据采用SPSS16.0进行方差分析.结果:MAO-SA表面促进纤连蛋白的后期吸附,有利于成骨细胞粘附和骨架改建,使成骨细胞较早表现出良好的分泌功能形态,增强细胞粘附强度,显著上调成骨细胞整合素αv亚基的mRNA表达水平,但对β1亚基的表达无促进作用.讨论:对纯钛表面进行SA和MAO复合处理,获得独特的表面微形貌,提高粗糙度,从而促进细胞外基质蛋白吸附和成骨细胞粘附.结论:MAO-SA表面显著促进成骨细胞的粘附,具有良好的生物相容性.

  20. Time-temperature evolution of microtextures and contained fluids in a plutonic alkali feldspar during heating

    Parsons, Ian; Fitz Gerald, John D.; Lee, James K. W.; Ivanic, Tim; Golla-Schindler, Ute

    2010-08-01

    Microtextural changes brought about by heating alkali feldspar crystals from the Shap granite, northern England, at atmospheric pressure, have been studied using transmission and scanning electron microscopy. A typical unheated phenocryst from Shap is composed of about 70 vol% of tweed orthoclase with strain-controlled coherent or semicoherent micro- and crypto-perthitic albite lamellae, with maximum lamellar thicknesses 700°C, and after >48 h at 700°C, all such regions were essentially compositionally homogeneous, as indicated by X-ray analyses at fine scale in the transmission electron microscope. Changes in lamellar thickness with time at different T point to an activation energy of ~350 kJmol-1. A lamella which homogenised after 6,800 h at 600°C, therefore, would have required only 0.6 s to do so in the melting interval at 1,100°C. Subgrains in patch perthite homogenised more slowly than coherent lamellae and chemical gradients in patches persisted for >5,000 h at 700°C. Homogenisation T is in agreement with experimentally determined solvi for coherent ordered intergrowths, when a 50-100°C increase in T for An1 is applied. Homogenisation of lamellae appears to proceed in an unexpected manner: two smooth interfaces, microstructurally sharp, advance from the original interfaces toward the mid-line of each twinned, semicoherent lamella. In places, the homogenisation interfaces have shapes reflecting the local arrangements of nanotunnels or pull-aparts. Analyses confirm that the change in alkali composition is also relatively sharp at these interfaces. Si-Al disordering is far slower than alkali homogenisation so that tweed texture in orthoclase, tartan twinning in irregular microcline, and Albite twins in albite lamellae and patches persisted in all our experiments, including 5,478 h at 700°C, 148 h at 1,000°C and 5 h at 1,100°C, even though the ensemble in each case was chemically homogeneous. Nanotunnels and pull-aparts were modified after only 50 min

  1. Plasma Etching Improves Solar Cells

    Bunyan, S. M.

    1982-01-01

    Etching front surfaces of screen-printed silicon photovoltaic cells with sulfur hexafluoride plasma found to increase cell performance while maintaining integrity of screen-printed silver contacts. Replacement of evaporated-metal contacts with screen-printed metal contacts proposed as one way to reduce cost of solar cells for terrestrial applications.

  2. Effects of TiO2 sandblast and acid-etched titanium surfaces on mRNA expression of osteoprotegerin and osteoprotegerin ligand in human osteoblast%TiO2喷砂酸蚀处理对人成骨细胞骨保护素和骨保护素配体mRNA表达影响的研究

    陆斌; 李广琪; 李建武; 谢延; 丁宏; 苏杭; 杨艳

    2011-01-01

    [Objective]To investigate the effectiveness of TiO2 sandblasted and acid - etched surfaces of titanium on mRNA expression of osteoprotegerin and osteoprotegerin ligand in human MG63 cells.[Methods]Titanium discs were prepared by machine - polished, sandblasted and acid - etched.MG63 cells were cultured on the titanium surface.The mRNA expressions of OPG and OPGL in MG63 cells were analyzed by real -time PCR.[Results]The level of OPG mRNA was increased in sandblasted group and sandblasted and acid - etched group.There was significant difference ( P < 0.05 ) between the two groups and the machine - polished group.But the levels of OPGL mRNA were not significantly different ( P > 0.05 ) among the three groups.[Conclusion]Sandblasted and acid - etched surfaces of titanium could regulate the balance between osteoblast and osteoclast by promoting the expression of OPG in human osteoblast.%[目的]探讨纯钛钛片经过喷砂及喷砂酸蚀处理后对人成骨细胞系MG63细胞骨保护素(osteoprotegerin,OPG)及骨保护素配体(osteoprotegerin ligand,OPGL)mRNA表达水平的影响.[方法]纯钛钛片表面分别进行机械打磨、喷砂及喷砂酸蚀处理,将人成骨细胞系MG63细胞接种于钛片表面,采用荧光实时定量PCR法检测OPG、OPGL mRNA表达水平.[结果]MG63细胞在经过喷砂及喷砂酸蚀处理后的钛片上培养后其OPG mRNA水平增高,与机械打磨组相比有统计学意义(P<0.05),而OPGL mRNA表达水平在各组之间没有明显差异(P>0.05).[结论]经过喷砂及喷砂酸蚀处理的钛片均可促进人成骨细胞表达OPG,从而调节成骨细胞与破骨细胞之间的平衡,促进骨质重建.

  3. Effect of delayed insertion of composite resin on the bond strength of etch-and-rinse adhesive systems

    Edson Alves de CAMPOS; SAAD, José Roberto Cury; Sizenando Toledo PORTO NETO; Campos, Lucas Arrais; de Andrade, Marcelo Ferrarezi

    2009-01-01

    Introduction: Etch-and-rinse adhesive systems are characterized bythe dental acid etching previously to the monomer application. Thesematerials can be classified as 3-step (when primer and bond are applied separately) or 2-step (when the primer and bond functions are carried out by a single component). Objective: To determine the influence of immediate or delayed insertion of restorative material on the values of bond strength of 2-step and 3-step etch-and-rinse adhesive systems using the mic...

  4. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG. PMID:26521000

  5. Dry etching of polydimethylsiloxane using microwave plasma

    This paper presents a new polydimethylsiloxane (PDMS) dry-etching method that uses microwave plasma. The applicability of the method for fabricating microstructures and removing residual PDMS is also verified. The etch rate of PDMS was dominantly influenced by the gas flux ratio of CF4/O2 and the microwave power. While the PDMS etch rate increased as the flux ratio of CF4 was increased, the etch rate decreased as the flux ratio of O2 was increased. The maximum etch rate of 4.31 µm min−1 was achieved when mixing oxygen (O2) and tetrafluoromethane (CF4) at a 1:2 ratio at 800 W power. The PDMS etch rate almost linearly increased with the microwave power. The ratio of the vertical etch rate to the lateral etch rate was in a range of 1.14–1.64 and varied with the gas fluxes. In consideration of potential applications of the proposed PDMS etching method, array-type PDMS microwells and network-type microprotrusion structures were fabricated. The contact angle was dramatically increased from 104° (non-etched PDMS surface) to 148° (etched PDMS surface) and the surface was thereby modified to be superhydrophobic. In addition, a thin PDMS skin that blocked holes and PDMS residues affixed in nickel microstructures was successively removed

  6. Los implantes de titanio con superficie grabada con ácidos: Un seguimiento clínico a 2 años Titanium implants with acid etched surface: A 2-year clinical follow-up

    E. Velasco Ortega

    2004-12-01

    Full Text Available Introducción. La tecnologia implantológica está mejorando la experiencia clínica de los implantes oseointegrados, con nuevos diseños y composición en su superficie. El estudio muestra la evaluación de los implantes oseointegrados de titanio con superficie grabada con ácidos y carga precoz en pacientes con pérdida dental unitaria, parcial y total. Métodos. 35 pacientes fueron tratados con 100 implantes TSA Defcon®, 53 en la mandibula y 47 en el maxilar superior. Todos los implantes fueron insertados en 1 fase quirúrgica. Los implantes fueron cargados funcionalmente tras un periodo de tiempo de 6 semanas (mandibula y de 8 semanas (maxilar superior. Los hallazgos clínicos (implantológicos y prostodóncicos se han seguido durante 2 años. Resultados. Tras la cicatrización (6-8 semanas, 19pacientes fueron restaurados con coronas unitarias (54,3%,9 pacientes con sobre dentaduras (25,7% y 7 pacientes con puentes fijos (20%, respectivamente. Se observaron complicaciones precoces, durante el periodo de cicatrización libre de carga funcional, en 3 implantes que fueron extraidos por movilidad. Estos resultados indican una supervivencia y éxito de los implantes, de 97%. Conclusiones. Los hallazgos clínicos del presente estudio sugieren que la utilización de los implantes de titanio con superficie grabada al ácido pueden obtener la oseointegración y ser cargados precozmente, representando un procedimiento técnico con éxito en los pacientes con pérdida de dientes.Introduction. Implant technology is improving the clinical experience of osseointegrated implants with new designs and compositions of their surfaceso This study reports the results of evaluation of titanium implants with acid-etched surface and early loading in patients with unitary, partially and fully tooth loss. Methods. 100 TSA Defcon® implants were inserted in 36 patients. 63 implants were placed in the mandible and 47 in the maxilla. All implants were inserted in one

  7. Micro-textures in plagioclase from 1994e1995 eruption, Barren Island Volcano:Evidence of dynamic magma plumbing system in the Andaman subduction zone

    M.L. Renjith

    2014-01-01

    A systematic account of micro-textures and a few compositional profiles of plagioclase from high-alumina basaltic aa lava erupted during the year 1994e1995, from Barren Island Volcano, NE India ocean, are presented for the first time. The identified micro-textures can be grouped into two categories:(i) Growth related textures in the form of coarse/fine-sieve morphology, fine-scale oscillatory zoning and resorption surfaces resulted when the equilibrium at the crystal-melt interface was fluctuated due to change in temperature or H2O or pressure or composition of the crystallizing melt;and (ii) morphological texture, like glomerocryst, synneusis, swallow-tailed crystal, microlite and broken crystals, formed by the influence of dynamic behavior of the crystallizing magma (convection, turbulence, degassing, etc.). Each micro-texture has developed in a specific magmatic environment, accordingly, a first order magma plumbing model and crystallization dynamics are envisaged for the studied lava unit. Magma generated has undergone extensive fractional crystallization of An-rich plagioclase in stable magmatic environment at a deeper depth. Subsequently they ascend to a shallow chamber where the newly brought crystals and pre-existing crystals have undergone dynamic crystallization via dissolution-regrowth processes in a convective self-mixing environment. Such repeated recharge-recycling processes have produced various populations of plagioclase with different micro-textural stratigraphy in the studied lava unit. Intermittent degassing and eruption related decompression have also played a major role in the final stage of crystallization dynamics.

  8. Sistemas adhesivos autograbadores en esmalte: ventajas e inconvenientes Self-etching adhesive systems on enamel: advantages and disadvantages

    M.A Gomes Moreira

    2004-08-01

    Full Text Available Se mide la resistencia adhesiva de cinco sistemas adhesivos autograbadores y se compara con dos monocomponentes, en esmalte bovino, utilizando cuatro protocolos de aplicación diferentes (según fabricante, con ácido, dos tiempos y dos capas. Asimismo se evalúan con MEB los patrones de grabado ácido de estos sistemas adhesivos, muy heterogéneos en los autograbadores. Todos los sistemas autograbadores presentan valores aceptables de resistencia adhesiva.The bond strength to bovine enamel of five self-etching adhesive systems was measured comparing to two total etch adhesive systems and using different application modes (following manufacturers' instructions, with a previous acid etching, duplicating priming time and doubling the number of adhesives' layers. The etching patterns were analized with scanning electron microscopy showing the self-etching adhesives different aggressiveness. All self-etching systems showed reliable bond strength values.

  9. Fabrication of rhenium nanowires by selective etching of eutectic alloys

    Rhenium nanowires have been fabricated via directional solidification and selective etching of a eutectic alloy. A NiAl-1.5 at.%Re eutectic alloy was directionally solidified using a constant growth rate and temperature gradient, in the Bridgman-type directional solidification furnace. The selective dissolution of the NiAl matrix was achieved with a mixture of HCl:H2O2, and produced an anisotropic etching of the eutectic, with the favoured etching directions aligned in parallel. The corroded surface was dominated by long rhenium fibres (diameter ∼400 nm), although shorter, and sometimes more rectangular wires were also observed in some sections. Digestion of the NiAl-Re eutectic in sulphuric acid, on the other hand, produced mainly long rhenium fibres of consistent shape and length. Both etching procedures might subsequently be applied for the preparation of nanodisc electrode arrays by embedding the obtained Re nanowires into a polymer and grinding until the wires are exposed. The reduction on the electrode area inherent in the use of such nanoelectrodes would allow a considerable increase in the signal-to-noise ratio, thus favouring the system for its application in analytical sensors. The use of rhenium in the electrode formation might also favour its application in high-temperature measurements

  10. In-Plasma Photo-Assisted Etching

    Economou, Demetre

    2015-09-01

    A methodology to precisely control the ion energy distribution (IED) on a substrate allowed the study of silicon etching as a function of ion energy at near-threshold energies. Surprisingly, a substantial etching rate was observed, independent of ion energy, when the ion energy was below the ion-assisted etching threshold (~ 16 eV for etching silicon with chlorine plasma). Careful experiments led to the conclusion that this ``sub-threshold'' etching was due to photons, predominately at wavelengths plasmas investigated, photo-assisted etching (PAE) was lowest in Br2/Ar gas mixtures and highest in HBr/Cl2/Ar. Above threshold etching rates scaled with the square root of ion energy. PAE rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Scanning electron and atomic force microscopy (SEM and AFM) revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. In-plasma PAE may be be a complicating factor for processes that require low ion energies, such as atomic layer etching. On the other hand PAE could produce sub-10 nm high aspect ratio (6:1) features by highly selective plasma etching to transfer nascent nanopatterns in silicon. Work supported by DOE Plasma Science Center and NSF.

  11. SF6 plasma etching of silicon nanocrystals

    An SF6-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH4-based plasma. The photoluminescence of the Si-NCs blue-shifts after etching, indicating an etching-induced size reduction of the Si-NCs. It is shown that both the SF6 plasma power and the flow rate can be utilized to control the etch rate (and thus the size reduction) of the Si-NCs. The SF6 etched Si-NCs show only low concentrations of residual impurities other than fluorine. Quantum yields as high as 50% have been observed from these SF6 etched Si-NCs despite oxidation.

  12. Maskless etching of silicon using patterned microdischarges

    Sankaran, R. M.; Giapis, K. P.

    2001-01-01

    Microdischarges in flexible copper-polyimide structures with hole diameters of 200 µm have been used as stencil masks to pattern bare silicon in CF4/Ar chemistry. The discharges were operated at 20 Torr using the substrate as the cathode, achieving etch rates greater than 7 µm/min. Optical emission spectroscopy provides evidence of excited fluorine atoms. The etch profiles show a peculiar shape attributed to plasma expansion into the etched void. Forming discharges in multiple hole and line ...

  13. Ion-bombardment etching of nuclear materials

    Conventional chemical etching often presents difficulties in revealing the microstructure of some materials. Ion bombardment etching has helped in overcoming these difficulties in the metallographic preparation of nuclear ceramic materials. Metallographic examination has played a key role in supporting the nuclear fuel development and fabrication programme in the Radiometallurgy Division. A representative selection of photomicrographs obtained by ion-bombardment etching is presented in this report. (author). 2 refs., 1 tab., 20 figs

  14. Silicon germanium mask for deep silicon etching

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  15. Dry etching technologies for reflective multilayer

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  16. Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

    The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (2 and pure H2 plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

  17. Numerical and analytical study of the impinging and bouncing phenomena of droplets on superhydrophobic surfaces with microtextured structures.

    Quan, Yunyun; Zhang, Li-Zhi

    2014-10-01

    The dynamics of droplets impinging on different microtextured superhydrophobic surfaces are modeled with CFD combined with VOF (Volume of Fluid) technique. The method is validated by experimental data and an analytical model (AM) that is used to predict the penetrating depth and the maximum spreading diameter of an impinging droplet. The effects of geometrical shapes and operating conditions on the spreading and bouncing behaviors of impinging droplets are investigated. Six surfaces with different shapes of pillars are considered, namely, triangular prism, square pillar, pentagonal prism, cylindrical pillar, and crisscross pillar surfaces. The bouncing ability of an impinging droplet on textured surfaces can be illustrated from three aspects, namely, the contact time, the ranges of velocities for rebound and the penetrating depth of liquid in the maximum spreading stage. The surface with crisscross pillars exhibits the best ability to rebound, which can be attributed to its large capillary pressure (PC) and its special structures that can capture air in the gaps during the impinging process. PMID:25203603

  18. Influence of laser etching on enamel and dentin bond strength of Silorane System Adhesive.

    Ustunkol, Ildem; Yazici, A Ruya; Gorucu, Jale; Dayangac, Berrin

    2015-02-01

    The aim of this in vitro study was to evaluate the shear bond strength (SBS) of Silorane System Adhesive to enamel and dentin surfaces that had been etched with different procedures. Ninety freshly extracted human third molars were used for the study. After the teeth were embedded with buccal surfaces facing up, they were randomly divided into two groups. In group I, specimens were polished with a 600-grit silicon carbide (SiC) paper to obtain flat exposed enamel. In group II, the overlying enamel layer was removed and exposed dentin surfaces were polished with a 600-grit SiC paper. Then, the teeth in each group were randomly divided into three subgroups according to etching procedures: etched with erbium, chromium:yttrium-scandium-gallium-garnet laser (a), etched with 35% phosphoric acid (b), and non-etched (c, control). Silorane System Adhesive was used to bond silorane restorative to both enamel and dentin. After 24-h storage in distilled water at room temperature, a SBS test was performed using a universal testing machine at a crosshead speed of 1 mm/min. The data were analyzed using two-way ANOVA and Bonferroni tests (p  0.05). The SBS of self-etch adhesive to dentin was not statistically different from enamel (p > 0.05). Phosphoric acid treatment seems the most promising surface treatment for increasing the enamel and dentin bond strength of Silorane System Adhesive. PMID:23912781

  19. SAXS study on the morphology of etched and un-etched ion tracks in apatite

    Nadzri A.

    2015-01-01

    Full Text Available Natural apatite samples were irradiated with 185 MeV Au and 2.3 GeV Bi ions to simulate fission tracks. The resulting track morphology was investigated using synchrotron small angle x-ray scattering (SAXS measurements before and after chemical etching. We present preliminary results from the SAXS measurement showing the etching process is highly anisotropic yielding faceted etch pits with a 6-fold symmetry. The measurements are a first step in gaining new insights into the correlation between etched and unetched fission tracks and the use of SAXS as a tool for studying etched tracks.

  20. Ultrasonic-assisted ac etching of aluminum foils for electrolytic capacitor electrodes with enhanced capacitance

    ac etching of high-purity aluminum foils in hybrid acids including hydrochloric acid, sulphuric acid and oxalic acid was investigated and the effects of ultrasonic-assisted stirring on the performances of the etched foils were investigated in this work. Scanning electron microscopy (SEM) was used for observation of the etched foils. Compared with the classically used mechanical stirring (magnetic stirring), the assistance of ultrasonic increased the performance of the etched foil. With 20 V forming voltage, the static capacitance and bending strength of the foils etched with ultrasonic stirring reached 76.5 μF cm-2 and 98 times compared with 71.2 μF cm-2 and 85 times respectively for the foils fabricated with magnetic stirring using 100 μm aluminum foils. The performance enhancement with the assistance of ultrasonic is probably due to the cavitation effects which are beneficial for the remove of protective layer and the dispersion effects which reduce concentration polarization in the bulk etchant solutions.

  1. Chemical Etching of Latent Tracks Formed by Bombardment with Nuclear Fragments for the Development of Track-Etched Polystyrene Membranes

    Latent tracks were first formed in 25 mm-thick polystyrene films by bombarding the films with fission fragments generated by a reaction between thermal neutrons and Uranium-235 in the Thai nuclear reactor for 4 hr. To enlarge the latent tracks to form flow-through pores, they were further etched in a mixture between 40% sulphuric acid (H2SO4) and potassium dichromate (K2Cr2O7) at 80oC for 16 hr. It was found that the best etching formulation among those investigated that could enlarge the latent tracks very efficiently was 35 g of K2Cr2O7 in 100 cm3 of 40% H2SO4. The average diameter and the density of the pores so formed were 11.6 ± 0.9 mm and 1.6 ± 0.3 x 105 pores-cm-2

  2. Aspect ratio dependent etching lag reduction in deep silicon etch processes

    Microelectromechanical system (MEMS) device fabrication often involves three dimensional structures with high aspect ratios. Moreover, MEMS designs require structures with different dimensions and aspect ratios to coexist on a single microchip. There is a well-documented aspect ratio dependent etching (ARDE) effect in deep silicon etching processes. For features with different dimensions etched simultaneously, the ARDE effect causes bigger features to be etched at faster rates. In practice, ARDE effect has many undesired complications to MEMS device fabrication. This article presents a physical model to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on ARDE lag reduction. The model breaks individual plasma etch cycles in the TDM plasma etch processes into polymer deposition, polymer removal, and spontaneous silicon etching stages. With the insights gained from the model and control over the passivation and etch steps, it has been demonstrated that ARDE lag can be controlled effectively. Experiments have shown that a normal ARDE lag can be changed to an inverse ARDE lag. Under optimized conditions, the ARDE lag is reduced to below 2%-3% for trenches with widths ranging from 2.5 to 100 μm, while maintaining good etch profile in trenches with different dimensions. Such results are achieved at etch rates exceeding 2 μm/min

  3. Etching Behavior of Aluminum Alloy Extrusions

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  4. Graphene nanoribbons: Relevance of etching process

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  5. Mechanisms of Hydrocarbon Based Polymer Etch

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  6. Wetting effects on in vitro bioactivity and in vitro biocompatibility of laser micro-textured Ca-P coating

    Calcium phosphate (Ca-P) coating on the Ti-6Al-4V alloy enhances osteoblast adhesion and tissue formation at the bone implant interface. In light of this, in the current work a laser-based coating technique was used to synthesize two different micro-textured (100 μm and 200 μm spaced line patterns) Ca-P coatings on the Ti-6Al-4V alloy and its effect on wettability and osteoblast cell adhesion were systematically studied. X-ray diffraction (XRD) analysis of the coated samples indicated the presence of precursor material, Ca10(PO4)6(OH)2 (HA) and various other additional phases such as CaTiO3, Ca3(PO4)2, TiO2 (anatase) and TiO2 (rutile) owing to the reaction between the precursor (HA) and substrate (Ti-6Al-4V) during laser processing. Confocal laser scanning microscopy-based characterization of coated samples indicated that the samples processed at 100 μm line spacing demonstrated a reduced surface roughness and smaller texture parameter value as compared to the samples processed at 200 μm spacing. The surface energy and wettability of the 100 μm spaced samples measured using a static sessile drop technique demonstrated higher surface energy and increased hydrophilicity as compared to the control (untreated Ti-6Al-4V) and the samples processed at 200 μm spacing. The tendency of coated samples for mineralization through generation of an apatite-like phase during immersion in a simulated body fluid was indicative of their in vitro bioactive nature. In light of higher surface energy and increased hydrophilicity the in vitro biocompatibility of the samples with 100 μm line spacing was demonstrated through increased cell proliferation and cell adhesion of mouse MC3T3-E1 osteoblast-like cells.

  7. Deep reactive ion etching of silicon carbide

    Tanaka, S.; Rajanna, K.; Abe, T.(High Energy Accelerator Research Organization (KEK), 305-0801, Tsukuba, Japan); Esashi, M

    2001-01-01

    In this article, we describe more than 100-\\mu m-deep reactive ion etching (RIE) of silicon carbide (SiC) in oxygen-added sulfur hexafluoride (SF6) plasma. We used a homemade magnetically enhanced, inductively coupled plasma reactive ion etcher (ME-ICP-RIE) and electroplated nickel masks. First, 5 h etching experiments using etching gases with 0%, 5%, 10% and 20% oxygen were performed by supplying rf power of 150 and 130 W to an ICP antenna and a sample stage, respectively. They demonstrated ...

  8. Characterization of stain etched p-type silicon in aqueous HF solutions containing HNO3 or KMnO4

    Research highlights: → Stain etching of p-Si in aqueous HF solutions containing HNO3 or KMnO4 was investigated. → The electrical conductivity of the etched Si surfaces was measured using impedance technique. → Scanning electron microscope and energy disperse X-ray were used to analyze the etched surfaces. → Etching in aqueous HF solution containing HNO3 led to formation of a porous silicon layer. → The formation of the porous silicon layer in HF/KMnO4 was accompanied by deposition of K2SiF6 on the pores surfaces. - Abstract: Stain etching of p-type silicon in hydrofluoric acid solutions containing nitric acid or potassium permanganate as an oxidizing agent has been examined. The effects of etching time, oxidizing agent and HF concentrations on the electrochemical behavior of etched silicon surfaces have been investigated by electrochemical impedance spectroscopy (EIS). An electrical equivalent circuit was used for fitting the impedance data. The morphology and the chemical composition of the etched Si surface were studied using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) techniques, respectively. A porous silicon layer was formed on Si etched in HF solutions containing HNO3, while etching in HF solutions containing KMnO4 led to the formation of a porous layer and simultaneous deposition of K2SiF6 inside the pores. The thickness of K2SiF6 layer increases with increasing the KMnO4 concentration and decreases as the concentration of HF increases.

  9. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  10. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    Riedel, Nicholas A. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Smith, Barbara S. [School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Williams, John D. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Popat, Ketul C., E-mail: ketul.popat@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

    2012-07-01

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO{sub 2} peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: Black-Right-Pointing-Pointer Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates showed fewer adhered platelets. Black-Right-Pointing-Pointer Platelet activation was reduced by the improved oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates exhibited increased whole blood clotting times. Black-Right-Pointing-Pointer Although clotting reductions were

  11. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO2 peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: ►Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. ►Oxygen etched substrates showed fewer adhered platelets. ►Platelet activation was reduced by the improved oxide surface. ►Oxygen etched substrates exhibited increased whole blood clotting times. ►Although clotting reductions were seen, protein adsorption remained similar.

  12. Etching and microstructure of engineering ceramics

    Cook, S.G. (Cookson Group Technology Center, Oxford (United Kingdom)); Little, J.A.; King, J.E. (Univ. of Cambridge (United Kingdom). Dept. of Materials Science and Metallurgy)

    1995-01-01

    Engineering ceramics are often difficult to prepare metallographically because of their hardness, wear resistance, and chemical inertness. Two silicon carbides, a silicon nitride and a sialon, are prepared and etched using several different techniques. The most efficient methods are identified.

  13. Chemical etching of polyvinylidene fluoride films

    The chemical etching of two types of polyvinylidene fluoride (PVDF) film irradiated with heavy ions was studied. Several etchants have been investigated in this work. It was found that for a solution of KOH+KMnO4 the radial etch rate (RER) is larger than for solutions used by other authors. This new solution for etching PVDF is used both for microfilter and for track detector purposes. Even alphas from a thick uranium foil register in solef PVDF by using this solution. As expected the RER for alphas is considerably lower than that for heavy ions. The diameter of the sandglass shaped pores at the surface of the film as a function of the etching time for various concentrations of KMnO4 and KOH and at different temperatures was measured. (author)

  14. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

    Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.

  15. Plasma/Neutral-Beam Etching Apparatus

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  16. Plasma etching: Yesterday, today, and tomorrow

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  17. Effect of helium ion beam treatment on the etching rate of silicon nitride

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 1015 to 1017 cm−2 were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed

  18. Compositional and Microtextural Analysis of Basaltic Feedstock Materials Used for the 2010 ISRU Field Tests, Mauna Kea, Hawaii

    Marin, N.; Farmer, J. D.; Zacny, K.; Sellar, R. G.; Nunez, J.

    2011-12-01

    This study seeks to understand variations in composition and texture of basaltic pyroclastic materials used in the 2010 International Lunar Surface Operation-In-Situ Resource Utilization Analogue Test (ILSO-ISRU) held on the slopes of Mauna Kea Volcano, Hawaii (1). The quantity and quality of resources delivered by ISRU depends upon the nature of the materials processed (2). We obtained a one-meter deep auger cuttings sample of a basaltic regolith at the primary site for feed stock materials being mined for the ISRU field test. The auger sample was subdivided into six, ~16 cm depth increments and each interval was sampled and characterized in the field using the Multispectral Microscopic Imager (MMI; 3) and a portable X-ray Diffractometer (Terra, InXitu Instruments, Inc.). Splits from each sampled interval were returned to the lab and analyzed using more definitive methods, including high resolution Powder X-ray Diffraction and Thermal Infrared (TIR) spectroscopy. The mineralogy and microtexture (grain size, sorting, roundness and sphericity) of the auger samples were determined using petrographic point count measurements obtained from grain-mount thin sections. NIH Image J (http://rsb.info.nih.gov/ij/) was applied to digital images of thin sections to document changes in particle size with depth. Results from TIR showed a general predominance of volcanic glass, along with plagioclase, olivine, and clinopyroxene. In addition, thin section and XRPD analyses showed a down core increase in the abundance of hydrated iron oxides (as in situ weathering products). Quantitative point count analyses confirmed the abundance of volcanic glass in samples, but also revealed olivine and pyroxene to be minor components, that decreased in abundance with depth. Furthermore, point count and XRD analyses showed a decrease in magnetite and ilmenite with depth, accompanied by an increase in Fe3+phases, including hematite and ferrihydrite. Image J particle analysis showed that the

  19. Plasma etching of chromium films in the fabrication of photomasks

    Coleman, Thomas P.; Buck, Peter D.

    1995-12-01

    To meet the advanced CD uniformity and resolution requirements of state-of-the-art maskmaking, dry chrome etch processing may be required. Dry etching is a more anisotropic process, significantly reducing etch undercut. The absence of undercutting allows the lithographer to image the resist at the iso-focal point, eliminating the need to underexpose to maintain CDs. Also, dry etch parameters can be precisely controlled via a microprocessor- controlled etch system with a highly accurate parameter-metering system that ensures greater process control. Using design-of-experiment methodologies, a chrome plasma etch process (using OCG-895i) was developed. This work proves the feasibility of plasma etching chromium patterns on photomasks. The results show an etch that has excellent uniformity, is anisotropic, and has excellent edge quality. Also, resist selectivity is high for the etching of thin chrome films. SEM results show a significant reduction in the bias needed to achieve nominal CDs. As with many dry etch processes, loading and microloading effects (i.e., localized pattern density effect on etch rates) are a concern. Initial investigations of loading and microloading effects were conducted. Results suggest that due to the high anisotropy of the etch, microloading is not an issue. However, plate loading (or the amount of chrome removed) increases etch times and can result in radial etch patterns. Loading effects must be minimized or eliminated to optimize etch uniformity.

  20. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    R.L. Erickson; A.J. de Gee; A.J. Feilzer

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load cyc

  1. Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loading

    Lerner, N. R.; Wydeven, T.

    1989-01-01

    Reactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.

  2. A relative humidity sensing probe based on etched thin-core fiber coated with polyvinyl alcohol

    Sun, Hao; Yang, Zaihang; Zhou, Libin; Liu, Nan; Gang, Tingting; Qiao, Xueguang; Hu, Manli

    2015-12-01

    A relative humidity (RH) sensing probe based on etched thin-core fiber (TCF) coated with polyvinyl alcohol (PVA) is proposed and experimentally demonstrated.This sensor is constructed by splicing a section of TCF with a single mode fiber (SMF), then part of the TCF's cladding is etched by hydrofluoric acid solution and finally the tip of TCF is coated with PVA. Experimental results demonstrate that this sensor can measure the ambient RH by demodulating the power variation of reflection spectrum. The power demodulation method make this sensor can ignore the temperature cross-sensitivity and have an extensive application prospect.

  3. Dry etched SiO2 Mask for HgCdTe Etching Process

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  4. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    Nakazaki, Nobuya, E-mail: nakazaki.nobuya.58x@st.kyoto-u.ac.jp; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi, E-mail: ono@kuaero.kyoto-u.ac.jp [Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540 (Japan)

    2014-12-14

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{sub 2} plasmas, as a function of rf bias power or ion incident energy E{sub i}, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on E{sub i}: one is the roughening mode at low E{sub i} < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing E{sub i}, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher E{sub i}, where the rms surface roughness decreases substantially with E{sub i} down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on E{sub i} were also observed in the etch rate versus √(E{sub i}) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing E{sub i} were found to correspond to changes in the predominant ion flux from feed gas ions Cl{sub x}{sup +} to ionized etch products SiCl{sub x}{sup +} caused by the increased etch rates at increased E{sub i}, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

  5. Dry etched SiO2 Mask for HgCdTe Etching Process

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-04-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  6. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

    Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √(Ei) curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors

  7. Thermal etching of Zr single crystal surfaces

    Extensive thermal etching of α-Zr single crystals has been found to occur during high-temperature annealing (1090 K) under ultra-high vacuum (-7 Pa). Two grades of material were examined: Z1 (high purity) and Z2 (nominally pure). Levels of the 'surface active' element, Fe, were about 1 and 50 ppma, in Z1 and Z2, respectively. In Z1, strong faceting occurred on a high-index surface (8 deg off the 1010 plane) and weak linear facets appeared on the basal (0002) plane. In Z2, etch pits and linear groove defects formed on the (1010) prism plane. Etch-pit formation may be promoted by Fe segregation to dislocations; Fe-rich precipitates were found at the bases of clusters of pits. Etch pit counts were consistent with dislocation densities of about 1.0 x 1011/m2. The basal plane remained comparatively flat, but Fe-rich, needle-shaped precipitates at 60 deg angles with each other were formed. An analysis of the results implies that the surface energies increase in the order of (0002), (1011) and (1010), and that the etching mechanism is surface diffusion. (author). 24 refs., 4 figs

  8. Facet selective etching of Au microcrystallites

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  9. Pulsed plasma etching for semiconductor manufacturing

    Power-modulated (pulsed) plasmas have demonstrated several advantages compared to continuous wave (CW) plasmas. Specifically, pulsed plasmas can result in a higher etching rate, better uniformity, and less structural, electrical or radiation (e.g. vacuum ultraviolet) damage. Pulsed plasmas can also ameliorate unwanted artefacts in etched micro-features such as notching, bowing, micro-trenching and aspect ratio dependent etching. As such, pulsed plasmas may be indispensable in etching of the next generation of micro-devices with a characteristic feature size in the sub-10 nm regime. This work provides an overview of principles and applications of pulsed plasmas in both electropositive (e.g. argon) and electronegative (e.g. chlorine) gases. The effect of pulsing the plasma source power (source pulsing), the electrode bias power (bias pulsing), or both source and bias power (synchronous pulsing), on the time evolution of species densities, electron energy distribution function and ion energy and angular distributions on the substrate is discussed. The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions. (topical review)

  10. Process capability of etched multilayer EUV mask

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  11. Plasma etching a ceramic composite. [evaluating microstructure

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  12. Low radio frequency biased electron cyclotron resonance plasma etching

    Samukawa, Seiji; Toyosato, Tomohiko; Wani, Etsuo

    1991-03-01

    A radio frequency (rf) biased electron cyclotron resonance (ECR) plasma etching technology has been developed to realize an efficient ion acceleration in high density and uniform ECR plasma for accurate Al-Si-Cu alloy film etching. In this technology, the substrate is located at the ECR position (875 G position) and the etching is carried out with a 400 kHz rf bias power. This Al-Si-Cu etching technology achieves a high etching rate (more than 5000 A/min), excellent etching uniformity (within ±5%), highly anisotropic etching, and Cu residue-free etching in only Cl2 gas plasma. These etching characteristics are accomplished by the combination of the dense and uniform ECR plasma generation at the ECR position with the efficient accelerated ion flux at the ECR position by using 400 kHz rf bias.

  13. Etching patterns on the micro‐ and nanoscale

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik; Jensen, Flemming

    2014-01-01

    ‐established process that enables the users of our lab to realize devices on any scale in the sub 100 nm to the sub 1 mm range. The silicon compound refractive lenses (see left figure) for focusing hard X‐rays from a synchrotron source are examples of etch processes with extreme specifications. In order to focus the X......‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...

  14. Maskless, fast and highly selective etching of fused silica with gaseous fluorine and gaseous hydrogen fluoride

    In this paper, we have directly buried microchannels in a fused silica substrate using femtosecond laser irradiation followed by chemical etching. By exploiting a synergic effect between gaseous hydrofluoric acid and fluorine (F2), we have obtained microchannels having an outstanding aspect ratio of 86 with a relative etching speed of 17 µm min−1. Using fluorine we successfully regenerated the etchant ‘in situ’, thus providing a way to control the bore shape, in particular, the strong conically shaped microchannel can be adjusted by modifying the etching mixture composition. We have avoided water formation during the microchannel construction, thus overcoming one of the major limits that prevents any further increase in the length and the aspect ratio. (paper)

  15. Angular dependence of silicon oxide etching yield in fluorocarbon chemistries

    High density fluorocarbon plasma for silicon oxide etching has various ion and neutral species. Profile evolution modeling can provide understanding of many difficulties caused by the complexity of the plasma in etching. In this research we have measured etching and deposition rates as functions of ion impinging angle, sample temperature, which are necessary for profile evolution modeling of silicon oxide etching in inductively coupled plasma. Angular dependence of etching yield of oxide in fluorocarbon plasma shows very unique behavior unlike typical ion-induced chemical etching or physical sputtering. Ion-induced deposition model is suggested and tested

  16. Geochemical, microtextural and petrological studies of the Samba prospect in the Zambian Copperbelt basement: a metamorphosed Palaeoproterozoic porphyry Cu deposit.

    Master, Sharad; Mirrander Ndhlovu, N.

    2015-04-01

    Ever since Wakefield (1978, IMM Trans., B87, 43-52) described a porphyry-type meta-morphosed Cu prospect, the ca 50 Mt, 0.5% Cu Samba deposit (12.717°S, 27.833°E), hosted by porphyry-associated quartz-sericite-biotite schists in northern Zambia, there has been controversy about its origin and significance. This is because it is situated in the basement to the world's largest stratabound sediment-hosted copper province, the Central African Copperbelt, which is hosted by rocks of the Neoproterozoic Katanga Supergroup. Mineralization in the pre-Katangan basement has long played a prominent role in ore genetic models, with some authors suggesting that basement Cu mineralization may have been recycled into the Katangan basin through erosion and redeposition, while others have suggested that the circulation of fluids through Cu-rich basement may have leached out the metals which are found concentrated in the Katangan orebodies. On the basis of ca 490-460 Ma Ar-Ar ages, Hitzman et al. (2012, Sillitoe Vol., SEG Spec. Publ., 16, 487-514) suggested that Samba represents late-stage impregnation of copper mineralization into the basement, and that it was one of the youngest copper deposits known in the Central African Copperbelt. If the Samba deposit really is that young, then it would have post-dated regional deformation and metamorphism (560-510 Ma), and it ought to be undeformed and unmetamorphosed. The Samba mineralization consists of chalcopyrite and bornite, occurring as disseminations, stringers and veinlets, found in a zone >1 km along strike, in steeply-dipping lenses up to 10m thick and >150m deep. Our new major and trace element XRF geochemical data (14 samples) show that the host rocks are mainly calc-alkaline metadacites. Cu is correlated with Ag (Cu/Ag ~10,000:1) with no Au or Mo. Our study focused on the microtextures and petrology of the Samba ores. We confirm that there is alteration of similar style to that accompanying classical porphyry Cu mineralization

  17. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  18. Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

    Ghulinyan, M.; Bernard, M.; Bartali, R.; Pucker, G.

    2015-12-01

    In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

  19. A combined etching process toward robust superhydrophobic SiC surfaces

    Large-scale porous SiC was fabricated by a combination of Pt-assisted etching and reactive ion etching. It was found that the surface roughness of combined etchings increased dramatically in comparison with metal-assisted etching or reactive ion etching only. To reduce the surface energy, the porous SiC surface was functionalized with perfluorooctyl trichlorosilane, resulting in a superhydrophobic SiC surface with a contact angle of 169.2° and a hysteresis of 2.4°. The superhydrophobicity of the SiC surface showed a good long-term stability in an 85 °C/85% humidity chamber. Such superhydrophobicity was also stable in acidic or basic solutions, and the pH values showed little or no effect on the SiC surface status. In addition, enhancement of porosity-induced photoluminescence intensity was found in the superhydrophobic SiC samples. The robust superhydrophobic SiC surfaces may have a great potential for microfluid device, thermal ground plane, and biosensor applications. (paper)

  20. Polymer masks for structured surface and plasma etching

    Graphical abstract: - Highlights: • Sub-micrometric silicon structures were prepared by cryogenic plasma etching. • Polymer templates based on phase-separated films of PS/PLA were used. • Silica structured masks were prepared by filling the polymer templates. • Etching of underlying silicon through silica templates gave original structures. - Abstract: Silica and silicon structures have been prepared at the sub-micrometer length-scale, using laterally phase-separated thin films of poly(styrene) (PS) and poly(lactic acid) (PLA) homopolymer blends. The selective removal of one polymer and the filling of the released space by silica precursor solution led, after calcination, to silica structures on silicon such as arrays of bowl-shape features or pillars, layers with through or non-through cylindrical holes, which has not been observed for some of them. The control of the morphology of the initial polymer film was a key point to achieve such type of structures. Particularly relevant was the use of solvent vapor annealing (vs thermal annealing) of the initial spin-coated films that favored and stabilized laterally phase-separated morphologies. Characteristic dimension of the domains were shown to be coupled with the thickness of the film, thinner films giving smaller domain sizes. Despite a relatively high incompatibility of the two polymers, a macro-phase separation was prevented in all the studied conditions. Sub-micrometric domains were formed, and for the thinner films, nanometric domains as small as 74 nm in size can be obtained. The silica structures formed by the infiltration of the polymer templates were used as hard masks for the cryogenic etching of underlying silicon. New structured surfaces, arrays of silicon pillars which can be plain or hollow at the upper part or arrays of cylindrical holes were formed. A selectivity as high as 21 was obtained using this type of mask for 1.5 μm deep holes having a typical diameter of 200 nm

  1. Polymer masks for structured surface and plasma etching

    Vital, Alexane [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Vayer, Marylène, E-mail: marylene.vayer@univ-orleans.fr [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Sinturel, Christophe [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Tillocher, Thomas; Lefaucheux, Philippe; Dussart, Rémi [Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France)

    2015-03-30

    Graphical abstract: - Highlights: • Sub-micrometric silicon structures were prepared by cryogenic plasma etching. • Polymer templates based on phase-separated films of PS/PLA were used. • Silica structured masks were prepared by filling the polymer templates. • Etching of underlying silicon through silica templates gave original structures. - Abstract: Silica and silicon structures have been prepared at the sub-micrometer length-scale, using laterally phase-separated thin films of poly(styrene) (PS) and poly(lactic acid) (PLA) homopolymer blends. The selective removal of one polymer and the filling of the released space by silica precursor solution led, after calcination, to silica structures on silicon such as arrays of bowl-shape features or pillars, layers with through or non-through cylindrical holes, which has not been observed for some of them. The control of the morphology of the initial polymer film was a key point to achieve such type of structures. Particularly relevant was the use of solvent vapor annealing (vs thermal annealing) of the initial spin-coated films that favored and stabilized laterally phase-separated morphologies. Characteristic dimension of the domains were shown to be coupled with the thickness of the film, thinner films giving smaller domain sizes. Despite a relatively high incompatibility of the two polymers, a macro-phase separation was prevented in all the studied conditions. Sub-micrometric domains were formed, and for the thinner films, nanometric domains as small as 74 nm in size can be obtained. The silica structures formed by the infiltration of the polymer templates were used as hard masks for the cryogenic etching of underlying silicon. New structured surfaces, arrays of silicon pillars which can be plain or hollow at the upper part or arrays of cylindrical holes were formed. A selectivity as high as 21 was obtained using this type of mask for 1.5 μm deep holes having a typical diameter of 200 nm.

  2. Fabrication of highly ordered nanopillar arrays and defined etching of ALD-grown all-around platinum films

    Highly ordered arrays of silicon nanopillars are etched by means of induced-coupled-plasma reactive-ion etching (RIE). The sulfur hexafluoride/oxygen (SF6/O2)-based cryogenic process allows etching of nanopillars with an aspect ratio higher than 20:1 and diameters down to 30 nm. Diameters can be further reduced by a well-controllable oxidation process in O2-ambient and a subsequent etching in hydrofluoric acid. This approach effectively removes surface contaminations induced by former RIE, as shown by x-ray photoelectron spectroscopy. Atomic layer deposition (ALD) is used to establish an all-around Al2O3/Pt stack onto the vertically aligned nanorods. Two approaches are successfully applied to remove the resistant Pt coating from the nanopillar tips. (paper)

  3. Super-hydrophobicity of PTFE films coated on an etched Al surface by using a RF-magnetron sputtering method

    Super-hydrophobic properties were achieved for RF-sputtered ultra-thin polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching was investigated by using field emission scanning electron microscopy (FE-SEM). In our investigation, super-hydrophobic surfaces with water contact angles higher than 150 .deg. were achieved on RF-sputtered ultra-thin PTFE films of less than 10 nm coated on aluminum(Al) surfaces etched for ten minutes with hydrochloric acid (HCl, 7 wt.% in H2O). X-ray photoelectron spectroscopy (XPS) analysis revealed the presence of a large quantity of -CF3 and -CF2 groups in the RF-sputtered PTFE films, which effectively reduced the surface energy of the etched aluminum. We concluded that the presence of a patterned morphology, along with the low surface energy on ultra-thin RF-sputtered PTFE coating, made the Al surface highly super-hydrophobic.

  4. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Stráský, Josef; Havlíková, Jana; Bačáková, Lucie; Harcuba, Petr; Mhaede, Mansour; Janeček, Miloš

    2013-09-01

    Presented work aims at multi-method characterization of combined surface treatment of Ti-6Al-4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  5. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Presented work aims at multi-method characterization of combined surface treatment of Ti–6Al–4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  6. Technique for etching monolayer and multilayer materials

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  7. Plasma etching for silicon device technology

    The emergence of VLSI (Very Large Scale Integration) in silicon device technology has resulted in the creation of major industries in the USA, Japan and Europe. This paper is concerned with the dry etching of thin films on the silicon substrate which define the circuit elements and interconnect them. (Auth.)

  8. Review of micromachining of ceramics by etching

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  9. Evaluation of bond strength of orthodontic brackets without enamel etching

    Boruziniat, Alireza; Khazaei, Yegane; Motaghi, Shiva; Moghaddas, Mohmmadjavad

    2015-01-01

    Background To compare the shear bond strength of brackets with and without enamel etching. Material and Methods In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching+Transbond XT adhesive+ Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive+ Transbond XT composite. 3- PQ1E group: Enamel etching+ PQ1 adhesive+ Transbond XT composite. 4- PQ1 group: PQ1 adhesive+ Transbond XT composite. The shear bond strengths of bra...

  10. Anodic etching of p-type cubic silicon carbide

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  11. Generalized Approach for Selecting Plasma Chemistries in Metal Etch

    Chen, Kun-Chieh

    2016-01-01

    In this work, a generalized methodology, combining thermodynamic assessment of various etching chemistries and kinetic verification of etching efficacy, is proposed. To screen various chemistries, reactions between the dominant vapor phase/condensed species at various partial pressures of reactants are first considered. The volatility of etch product is determined to aid the selection of viable etch chemistry. Magnetic tunnel junction (MTJ) based magnetic random access memory (MRAM) was chose...

  12. Cryogenic rf test of the first plasma etched SRF cavity

    Upadhyay, J.; Palczewski, A.; Popović, S.; Valente-Feliciano, A. -M.; Im, D.; Phillips, L; Vušković, L.

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity i...

  13. High index contrast polysiloxane waveguides fabricated by dry etching

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG trade mark sign polysiloxane thin films. The use of a silica mask and CHF3/O2 etch gas led to large etch selectivity between the silica and IPG trade mark sign of >20 and etch rates of >100 nm/min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

  14. A randomized control clinical trial of fissure sealant retention: Self etch adhesive versus total etch adhesive

    Nadia Aman; Farhan Raza Khan; Aisha Salim; Huma Farid

    2015-01-01

    Context: There are limited studies on comparison of Total etch (TE) and Self etch (SE) adhesive for placement of sealants. Aims: The aim of the study was to compare the retention of fissure sealants placed using TE adhesive to those sealants placed using SE (seventh generation) adhesive. Settings and Design: The study was conducted in the dental section, Aga Khan University Hospital. This study was a randomized single blinded trial with a split mouth design. Materials and Methods:...

  15. Bulk and track etching of PET studied by spectrophotometer

    UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm-1. Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

  16. Etched profile control in anisotropic etching of silicon by TMAH+Triton

    Pal, Prem; Gosálvez, M. A.; Sato, K.

    2012-06-01

    The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and nonstirred solutions. Triton X-100, with formula C14H22O(C2H4O)n, where n = 9-10, is used as the surfactant. The stirring results conclude that the adsorption of the surfactant on the etched silicon surfaces is predominantly physical in nature rather than chemical (physisorption versus chemisorption). The proposed model to account for the galvanic interaction between the evolving facets indicates that the underlying chemical etching process can be significantly surpassed by the onset of an electrochemical etching contribution when the relative area of the exposed {1 0 0} surface becomes relatively small in comparison to that of the developed {1 1 1} sidewalls. This study is useful for engineering applications where surfactant-added TMAH is used for the fabrication of silicon MEMS structures that should contain negligible undercutting.

  17. Etched profile control in anisotropic etching of silicon by TMAH+Triton

    The adverse effect of mechanical agitation (magnetic bead stirring) as well as galvanic interaction between the evolving facets of the etch front on the amount of undercutting during anisotropic etching of Si{1 0 0} wafers in surfactant-added tetramethylammonium hydroxide (TMAH) is studied by etching different mask patterns in magnetically stirred and nonstirred solutions. Triton X-100, with formula C14H22O(C2H4O)n, where n = 9–10, is used as the surfactant. The stirring results conclude that the adsorption of the surfactant on the etched silicon surfaces is predominantly physical in nature rather than chemical (physisorption versus chemisorption). The proposed model to account for the galvanic interaction between the evolving facets indicates that the underlying chemical etching process can be significantly surpassed by the onset of an electrochemical etching contribution when the relative area of the exposed {1 0 0} surface becomes relatively small in comparison to that of the developed {1 1 1} sidewalls. This study is useful for engineering applications where surfactant-added TMAH is used for the fabrication of silicon MEMS structures that should contain negligible undercutting. (paper)

  18. Process for producing micromechanical structures by means of reactieve ion etching

    Jansen, Henricus Venantius; Boer; Legtenberg, Rob; Elders, Job; Elwenspoek, Miko Curt; Fluitman, Johannes Hermanus Josephus

    1996-01-01

    A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (RIE), wherein a substrate is etched with a silicon etch gas mixture to obtain an aspect ratio of at least 10. The process comprises the steps of: a) anisotropic etching using a first silicon etch gas to obtain a primary microstructure; b) depositing a halocarbon film on the walls of the primary microstructure; d) isotropic etching using a second silicon etch gas, to obtain a final microstructure...

  19. Development of Wet-Etching Tools for Precision Optical Figuring

    This FY03 final report on Wet Etch Figuring involves a 2D thermal tool. Its purpose is to flatten (0.3 to 1 mm thickness) sheets of glass faster thus cheaper than conventional sub aperture tools. An array of resistors on a circuit board was used to heat acid over the glass Optical Path Difference (OPD) thick spots and at times this heating extended over the most of the glass aperture. Where the acid is heated on the glass it dissolves faster. A self-referencing interferometer measured the glass thickness, its design taking advantage of the parallel nature and thinness of these glass sheets. This measurement is used in close loop control of the heating patterns of the circuit board thus glass and acid. Only the glass and acid were to be moved to make the tool logistically simple to use in mass production. A set of 4-circuit board, covering 80 x 80-cm aperture was ordered, but only one 40 x 40-cm board was put together and tested for this report. The interferometer measurement of glass OPD was slower than needed on some glass profiles. Sometimes the interference fringes were too fine to resolve which would alias the sign of the glass thickness profile. This also caused the phase unwrapping code (FLYNN) to struggle thus run slowly at times taking hours, for a 10 inch square area. We did extensive work to improve the speed of this code. We tried many different phase unwrapping codes. Eventually running (FLYNN) on a farm of networked computers. Most of the work reported here is therefore limited to a 10-inch square aperture. Researched into fabricating a better interferometer lens from Plexiglas so to have less of the scattered light issues of Fresnel lens groves near field scattering patterns, this set the Nyquest limit. There was also a problem with the initial concept of wetting the 1737 glass on its bottom side with acid. The wetted 1737 glass developed an Achromatic AR coating, spoiling the reflection needed to see glass thickness interference fringes. In response

  20. Development of Wet-Etching Tools for Precision Optical Figuring

    Rushford, M C; Dixit, S N; Hyde, R; Britten, J A; Nissen, J; Aasen, M; Toeppen, J; Hoaglan, C; Nelson, C; Summers, L; Thomas, I

    2004-01-27

    This FY03 final report on Wet Etch Figuring involves a 2D thermal tool. Its purpose is to flatten (0.3 to 1 mm thickness) sheets of glass faster thus cheaper than conventional sub aperture tools. An array of resistors on a circuit board was used to heat acid over the glass Optical Path Difference (OPD) thick spots and at times this heating extended over the most of the glass aperture. Where the acid is heated on the glass it dissolves faster. A self-referencing interferometer measured the glass thickness, its design taking advantage of the parallel nature and thinness of these glass sheets. This measurement is used in close loop control of the heating patterns of the circuit board thus glass and acid. Only the glass and acid were to be moved to make the tool logistically simple to use in mass production. A set of 4-circuit board, covering 80 x 80-cm aperture was ordered, but only one 40 x 40-cm board was put together and tested for this report. The interferometer measurement of glass OPD was slower than needed on some glass profiles. Sometimes the interference fringes were too fine to resolve which would alias the sign of the glass thickness profile. This also caused the phase unwrapping code (FLYNN) to struggle thus run slowly at times taking hours, for a 10 inch square area. We did extensive work to improve the speed of this code. We tried many different phase unwrapping codes. Eventually running (FLYNN) on a farm of networked computers. Most of the work reported here is therefore limited to a 10-inch square aperture. Researched into fabricating a better interferometer lens from Plexiglas so to have less of the scattered light issues of Fresnel lens groves near field scattering patterns, this set the Nyquest limit. There was also a problem with the initial concept of wetting the 1737 glass on its bottom side with acid. The wetted 1737 glass developed an Achromatic AR coating, spoiling the reflection needed to see glass thickness interference fringes. In response

  1. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant. (technical note)

  2. Porous siliconformation and etching process for use in silicon micromachining

    Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

    1991-01-01

    A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

  3. Research on wet etching at MEMS torsion mirror optical switch

    Zhang, Yi; Wang, Jifeng; Luo, Yuan

    2002-10-01

    Etching is a very important technique at MEMS micromachining. There are two kinds of etching processing, the one is wet etching and the other is dry etching. In this paper, wet selective etching with KOH and tetramethyl ammonium hydroxide (TMAH) etchants is researched in order to make a torsion mirror optical switch. The experiments results show that TMAH with superphosphate is more suitable at MEMS torsion mirror optical switch micromachining than KOH, and it also has good compatibility with IC processing. Also our experiments results show some different with other reported research data. More work will be done to improve the yield rate of MEMS optical switch.

  4. SU-8 etching in inductively coupled oxygen plasma

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming;

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  5. Chemically assisted ion beam etching of polycrystalline and (100)tungsten

    Garner, Charles

    1987-01-01

    A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

  6. Synthesis and Characterization of Chemically Etched Nanostructured Silicon

    Mughal, Asad Jahangir

    2012-05-01

    Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

  7. Plasma etching of lead germanate (PGO) ferroelectric thin film

    The lead germanate (PGO) thin film has been proposed for FeRAM devices, especially for one transistor ferroelectric memory cell application. To realize such applications, it is important not only to form the PGO thin film, but also to etch/pattern such thin film. In this work, plasma etching of PGO thin films was investigated by using chlorine or fluorine gas chemistries in an electron cyclotron resonance plasma reactor. Etch rates were studied as a function of etching conditions. The results indicated that a chemical effect, rather than a pure physical sputtering, was the dominant factor during the plasma etching of PGO material. It was also found that under the same etching conditions, a Cl2/Ar chemistry was more effective in PGO etching than a CF4/Ar chemistry. Under the etching conditions studied, there was no obvious plasma etching damage to the composition of the PGO thin films. However, the surface oxygen and chlorine concentration increased after the etching, indicating there might be some etch-induced surface residue. Such residue was thermally unstable, and can be greatly reduced by a postetch anneal in O2

  8. Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy

    An investigation into the photo-electrochemical (PEC) etching of free-standing GaN wafers produced by hydride vapor phase epitaxial growth (HVPE) has found that etching is only possible with UV illumination in an acidic or basic electrolyte. Through photo-current measurement and X-ray analysis it was determined that lack of etching in a neutral electrolyte can be attributed to the formation of an oxide film on the GaN surface. Surface damage was also found to be a significant factor, with the etching rate and photo current density of surfaces treated by grinding and mechanical polishing being markedly less compared to a finely polished surface. Subsequent investigation of the luminescence and the etching characteristics of the intentionally-introduced scratches indicated that subsurface damage is difficult to remove from GaN by PEC etching due to the trapping of photo-excited carriers. A peculiar surface feature of concentric ring structures made up of alternating small and large pores was observed on the GaN surface along with small island regions, which is attributed to variations in the electronic properties of the GaN crystal that is created during HVPE growth

  9. Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium

    In this paper, we study Ge2Sb2Te5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge2Sb2Te5 films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed. (orig.)

  10. TMAH wet etching of silicon micro- and nano-fins for selective sidewall epitaxy of III-Nitride semiconductors

    Liu, Lianci; Myasishchev, Denis; Kuryatkov, Vladimir; Nikishin, Sergey; Holtz, Mark; Harris, Rusty

    2011-10-01

    We describe formation of silicon micro- and nano-fins, with (111)-plane sidewall facets, for selective sidewall epitaxy of III-Nitride semiconductors. The fins are produced by wet etching (110)-oriented silicon wafers. Silicon dioxide is deposited using plasma enhanced chemical vapor deposition for producing a hard mask. The silicon dioxide is patterned using photo- and electron-beam lithography for micro- and nano-fins, respectively, followed by wet etching in hydrofluoric acid. Wet etching to produce the silicon fins is carried out using tetramethyl ammonium hydroxide (TMAH) diluted with isopropyl alcohol (IPA). Atomic force microscopy and scanning electron microscopy are used to determine morphology including the surface roughness of the area between fins and the etching rate of silicon. We tune the etching time, temperature, and percentage of IPA in order to get the best surface on both (111) and (110) planes. Adding IPA is found to alter the etch rate and improve the surface between the fins without adversely affecting the sidewall morphology.

  11. Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium

    Deng, Changmeng; Geng, Yongyou; Wu, Yiqun

    2011-09-01

    In this paper, we study Ge2Sb2Te5 phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge2Sb2Te5 films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed.

  12. Optimization of etched tracks by gas permeation through polymeric membranes

    Lexam polycarbonate is a glassy polymer was irradiated by alpha particles of 5.3 MeV with dose 107 particles/cm2. To obtain variation of permeability of hydrogen for above polymer with etching time at constant temperature 60 deg C(±2 degC) using 6N NaOH as etchant. Permeability is a function of bulk etch rate. In present study 28 μm and 48 μm membrane were used. The permeability of these membranes has increased with etching time. At a certain etching time the permeability for hydrogen has rapidly increased for both membranes. Both the bulk and track etching have important role for enhancement in permeability. The track etching is found to be faster than bulk etching due to irradiation, and also dependent on the thickness of the membranes. (author)

  13. Si etching with reactive neutral beams of very low energy

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF4 and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching

  14. Optical properties of individual etched tracks

    Skvarc, J

    1999-01-01

    Differentiation between etched tracks of different particles or particles of different energy is usually based on track size measurements. In addition, it is possible to take into account the optical properties of the tracks. In the present work the visual appearance of the tracks is calculated by means of track etching simulation and optical ray-tracing of a computer model of the track. From the digital image obtained the optical properties of tracks can be predicted and used for the quantitative description of the incoming particles. Apart from the already known optical track parameter, the average grey level, this work provides the possibility for a theoretical study of other parameters, such as contrast and symmetry.

  15. Wet etching methods for perovskite substrates

    Leca, Victor; Rijnders, Guus; Koster, Gertjan; Blank, Dave H.A.; Rogalla, Horst

    2000-01-01

    In oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) ar

  16. Etching of glass microchips with supercritical water

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    Roč. 15, č. 1 (2015), s. 311-318. ISSN 1473-0197 R&D Projects: GA ČR(CZ) GAP106/12/0522; GA ČR(CZ) GBP206/12/G014; GA MŠk(CZ) EE2.3.20.0182 Institutional support: RVO:68081715 Keywords : glass microchips * channel etching * supercritical water Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 6.115, year: 2014

  17. Two Scale Model for Aggregation and Etching

    John, G C; John, George C.; Singh, Vijay A.

    1995-01-01

    We propose a dual scale drift-diffusion model for interfacial growth and etching processes. The two scales are: (i) a depletion layer width surrounding the aggregate and (ii) a drift length.The interplay between these two antithetical scales yields a variety of distinct morphologies reported in electrochemical deposition of metals, viscous fingering in fluids and in porous silicon formation. Further, our algorithm interpolates between existing growth models (diffusion limited aggregation, ballistic deposition and Eden) for limiting values of these variables.

  18. Transport through track etched polymeric blend membrane

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  19. Track etching technique in membrane technology

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures

  20. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  1. A new dry etch chemistry in deep trench silicon plasma etching for sub-100 nm technologies

    Richter, Harald; Guenther, Siegfried; Costina, Ioan; Weidner, Guenter; Marschmeyer, Steffen; Silz, Heike [IHP, Frankfurt Oder (Germany); Wege, Stephan; Barth, Sven [Qimonda, Dresden (Germany)

    2008-07-01

    An essential market share of today's DRAM production is covered by devices using a trench capacitor cell. The technology and productivity driven shrink of lateral dimensions at approximately constant capacity specifications lead to an increased deep trench (DT) aspect ratio (depth/width) requirement. For sub-100nm technologies and a given capacitance and cell size the requirement for DT etching results in aspect ratios of 60 to 80. In this paper, we describe DT process developments driven by the following motivation: To realise aspect ratio requirements a high selectivity to hard mask is needed. Therefore, process conditions which lead to minimized hard mask consumption during Si DT etching are necessary. A new DT plasma etch chemistry was introduced using CO{sub 2} as a successful alternative to the standard passivation component O{sub 2} in the common gas mixture HBr/NF{sub 3}/O{sub 2}. Investigations were focused on a non conventional hard mask material containing a TiN/Ti sandwich structure. In former investigations TiN/Ti works only as a stop layer for DT etch. Approx. 3.5 micron deep trenches over a 200 nm TiN/Ti hard mask can be realized using HBr/NF{sub 3}/CO{sub 2} processes. During Si etching a passivation layer is formed on the hard mask regions protecting TiN and ensures the requested high selectivity.

  2. Optimization of etching and reading procedures for the Autoscan 60 track etch system

    The Los Alamos National Laboratory is charged with measuring the occupational exposure to radiological workers and contractors throughout the Laboratory, which includes many different sites with multiple and varied radiation fields. Of concern here are the high energy neutrons such as those generated during accelerator operations at Los Alamos Neutron Science Center (LANSCE). In 1993, the Los Alamos National Laboratory purchased an Autoscan 60 automated reader for use with chemically etched CR39 detectors. The dosimeter design employed at LANL uses a plastic, hemispherical case, encompassing a polystyrene pyramidal detector holder. The pyramidal holder supports three detectors at a 35 degree angle. Averaging the results of the three detectors minimizes the angular dependence normally associated with a planar dosimeter. The Autoscan 60 is an automated reading system for use with CR39 chemical etch detectors. The detectors are immersed in an etch solution to enhance the visibility of the damage sites caused by recoil proton impact with the hydrogen atoms in the detector. The authors decided to increase the etch time from six hours to 15 hours, while retaining the 70 C temperature. The reason for the change in the etch is to enhance the sensitivity and precision of the CR39 detector as indicated by this study

  3. A spin-on photosensitive polymeric etch protection mask for anisotropic wet etching of silicon

    Newly developed photosensitive etch protection materials have key advantages over standard photoresists typically used in today's MEMS applications. Using these new materials eliminates the need for silicon nitride (SiN) masks deposited via CVD processes, which require significant investments in processing equipment, utilize extreme processing conditions and contribute to an overall decrease in throughput. This new technology will enhance throughput by reducing the number of process steps and simplify the process flow with minimal impact on overall undercut performance. The polymeric coating serves as a SiN mask replacement for etching silicon substrates in alkaline anisotropic etchants such as KOH and TMAH. The undercut performance observed is larger than that of SiN when etched in KOH, but when alternative alkaline etchants such as TMAH are used, the undercut is identical (1–2% with respect to etch depth). Various factors, such as primer bake, topcoat final cure temperature, etchant concentration and substrate surface conditions, have all been shown to affect undercut results. An additional advantage of this new technology is that it can be easily reworked/removed by solvents, plasma etch, Nano-Strip®, Piranha and RCA cleaning solutions depending on where the removal takes place in the process

  4. Comparison Of Bond Strength Of Orthodontic Molar Tubes Using Different Enamel Etching Techniques And Their Effect On Enamel

    In fixed orthodontic treatment, brackets and tubes are used for transferring orthodontic forces to the teeth. Those attachments were welded to cemented bands. Fifty years ago, direct bonding of brackets and other attachments has become a common technique in fixed orthodontic treatment. Orthodontists used to band teeth, especially molars and second premolars, to avoid the need for re bonding accessories in these regions of heavy masticatory forces. However, it is a known fact that direct bonding saves chair time as it does not require prior band selection and fitting, has the ability to maintain good oral hygiene, improve esthetics and make easier attachment to crowded and partially erupted teeth. Moreover, when the banding procedure is not performed with utmost care it can damage periodontal and/or dental tissues. Molar tubes bonding decreases the chance of decalcification caused by leakage beneath the bands. Since molar teeth are subjected to higher masticatory impact, especially lower molars, it would be convenient to devise methods capable of increasing the efficiency of their traditional bonding. These methods may include variation in bond able molar tube material, design, bonding materials and etching techniques. For achieving successful bonding, the bonding agent must penetrate the enamel surface; have easy clinical use, dimensional stability and enough bond strength. Different etching techniques were introduced in literature to increase the bond strength which includes: conventional acid etching, sandblasting and laser etching techniques. The process of conventional acid etching technique was invented In (1955) as the surface of enamel has great potential for bonding by micromechanical retention, to form ‘the mechanical lock‘. The primary effect of enamel etching is to increase the surface area. However, this roughens the enamel microscopically and results in a greater surface area on which to bond. By dissolving minerals in enamel, etchants remove the

  5. Cosmogenic and implanted radionuclides studied by selective etching of lunar soils

    Jull, A J T; McHargue, L R; Burr, G S; Donahue, D J

    2000-01-01

    We have made new measurements of the concentrations of sup 1 sup 4 C and sup 1 sup 0 Be in lunar surface soils. We discuss the results of these new studies based on different acid etching methods, which provide useful information for future experiments. We also discuss the implications of these results for the production of these radionuclides by galactic and solar cosmic radiation, and the direct implantation of solar-energetic particles into lunar surface material.

  6. Cosmogenic and implanted radionuclides studied by selective etching of lunar soils

    We have made new measurements of the concentrations of 14C and 10Be in lunar surface soils. We discuss the results of these new studies based on different acid etching methods, which provide useful information for future experiments. We also discuss the implications of these results for the production of these radionuclides by galactic and solar cosmic radiation, and the direct implantation of solar-energetic particles into lunar surface material

  7. Novel hydrophilic nanostructured microtexture on direct metal laser sintered Ti-6Al-4V surfaces enhances osteoblast response in vitro and osseointegration in a rabbit model.

    Hyzy, Sharon L; Cheng, Alice; Cohen, David J; Yatzkaier, Gustavo; Whitehead, Alexander J; Clohessy, Ryan M; Gittens, Rolando A; Boyan, Barbara D; Schwartz, Zvi

    2016-08-01

    The purpose of this study was to compare the biological effects in vivo of hierarchical surface roughness on laser sintered titanium-aluminum-vanadium (Ti-6Al-4V) implants to those of conventionally machined implants on osteoblast response in vitro and osseointegration. Laser sintered disks were fabricated to have micro-/nano-roughness and wettability. Control disks were computer numerical control (CNC) milled and then polished to be smooth (CNC-M). Laser sintered disks were polished smooth (LST-M), grit blasted (LST-B), or blasted and acid etched (LST-BE). LST-BE implants or implants manufactured by CNC milling and grit blasted (CNC-B) were implanted in the femurs of male New Zealand white rabbits. Most osteoblast differentiation markers and local factors were enhanced on rough LST-B and LST-BE surfaces in comparison to smooth CNC-M or LST-M surfaces for MG63 and normal human osteoblast cells. To determine if LST-BE implants were osteogenic in vivo, we compared them to implant surfaces used clinically. LST-BE implants had a unique surface with combined micro-/nano-roughness and higher wettability than conventional CNC-B implants. Histomorphometric analysis demonstrated a significant improvement in cortical bone-implant contact of LST-BE implants compared to CNC-B implants after 3 and 6 weeks. However, mechanical testing revealed no differences between implant pullout forces at those time points. LST surfaces enhanced osteoblast differentiation and production of local factors in vitro and improved the osseointegration process in vivo. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 104A: 2086-2098, 2016. PMID:27086616

  8. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  9. Comparison of wet and dry chrome etching with the CORE-2564

    Buck, Peter D.; Grenon, Brian J.

    1994-02-01

    Chrome masks have traditionally been wet etched in an acidic solution of cerric ammonium nitrate. The etchant is commonly sprayed on the mask while the mask is slowly rotated, using an APT-914 or equivalent processor. While this process is well-understood, relatively trouble- free and inexpensive, the isotropic nature of wet etching results in an undercut of the chrome relative to the resist etch mask of approximately equals 150 nm per edge. Compensation for the undercut, in order to maintain control of the mean critical dimension (CD), is done by adjusting the printed feature size such that the undercut grows the printed feature to the desired final size. This sizing can be performed by manipulating the computer aided design database, which can be expensive and time consuming. In this paper, we present a comparison of wet and dry chrome etch processes using plates printed with the CORE-2564 in OCG-895 i resist. The differences in CD performance and resolution are illustrated.

  10. Influence of microhybrid resin and etching times on bleached enamel for the bonding of ceramic brackets

    Leily Macedo Firoozmand

    2013-04-01

    Full Text Available The aim of this study was to evaluate the shear bond strength (SBS of polycrystalline ceramic brackets (PCB bonded after bleaching treatment using different composite resins and enamel etching times. A total of 144 bovine incisors were randomly divided into two study groups (n = 72, each as follows: G1, enamel bleached with 35% hydrogen peroxide, and G2 (control group, enamel unbleached. After the bleaching treatment, the samples were stored in artificial saliva for 14 days. These groups were further divided into two subgroups (n = 36, each as follows: GA, brackets bonded with Transbond XT (3M and GB, brackets bonded with Filtek Z250 (3M. For each resin used, three different etching times with 37% phosphoric acid (15, 30 and 60 seconds were tested. SBS tests were performed using a universal testing machine (EMIC, and the adhesive remnant index (ARI score was verified. Significant differences among the three experimental conditions and interactions between the groups were observed. The type of composite resin accounted for 24% of the influence on the bond strength, whereas the etching time and bleaching treatment accounted for 14.5% and 10% of the influence on bond strength, respectively. The ARI revealed that the most common area of adhesion failure was at the composite resin-bracket interface. The type of composite resin, etching time and external bleaching significantly influenced the SBS of PCB on enamel, even after 14 days of saliva storage.

  11. Morphological evolution of silver nanoparticles and its effect on metal-induced chemical etching of silicon.

    Baek, Seong-Ho; Kong, Bo Hyun; Cho, Hyung Koun; Kim, Jae Hyun

    2013-05-01

    In this report, we have demonstrated the morphological evolution of the silver nanoparticles (AgNPs) by controlling the growth conditions and its effect on morphology of silicon (Si) during metal-induced electroless etching (MICE). Self-organized AgNPs with peculiarly shape were synthesized by an electroless plating method in a conventional aqueous hydrofluoric acid (HF) and silver nitrate (AgNO3) solution. AgNP nuclei were densely created on Si wafer surface, and they had a strong tendency to merge and form continuous metal films with increasing AgNO3 concentrations. Also, we have demonstrated that the fabrication of aligned Si nanowire (SiNW) arrays in large area of p-Si (111) substrates by MICE in a mixture of HF and hydrogen peroxide (H2O2) solution. We have found that the morphology of the initial AgNPs and oxidant concentration (H2O2) greatly influence on the shape of the SiNW etching profile. The morphological results showed that AgNP shapes were closely related to the etching direction of SiNWs, that is, the spherical AgNPs preferred to move vertical to the Si substrate, whereas non-spherical AgNPs changed their movement to the [100] directions. In addition, as the etching activity was increased at higher H2O2 concentrations, AgNPs had a tendency to move from the original [111] direction to the energetically preferred [100] direction. PMID:23858934

  12. Effect of etching conditions on pore shape in etched ion-track polycarbonate membranes

    We have undertaken a systematic investigation of the influence of methanol and applied transmembrane potential on the shape of conical pores produced by the track-etch technique. Heavy ion tracks in polycarbonate foils were chemically etched in an electrolytical cell under various conditions (different methanol content in the etchant, and applied potentials). It is found that the cone angle of the conical nanopore is dependent on the amount of methanol present in an alkaline etching solution as well as on the applied transmembrane potential. A combination of both these techniques is proposed to obtain conical nanopore with more exaggerated base opening. Controlling these conditions provide a route to fabricate controlled shape pores in polycarbonate membranes that have potential applications in a wide array of fields.

  13. Anisotropic Ta2O5 waveguide etching using inductively coupled plasma etching

    Smooth and vertical sidewall profiles are required to create low loss rib and ridge waveguides for integrated optical device and solid state laser applications. In this work, inductively coupled plasma (ICP) etching processes are developed to produce high quality low loss tantalum pentoxide (Ta2O5) waveguides. A mixture of C4F8 and O2 gas are used in combination with chromium (Cr) hard mask for this purpose. In this paper, the authors make a detailed investigation of the etch process parameter window. Effects of process parameters such as ICP power, platen power, gas flow, and chamber pressure on etch rate and sidewall slope angle are investigated. Chamber pressure is found to be a particularly important factor, which can be used to tune the sidewall slope angle and so prevent undercut

  14. Improving aluminum nitride plasma etch process for MEMS applications

    We present a new plasma etch process optimized for etching piezoelectric aluminum nitride (AlN) film deposited on thin molybdenum (Mo) metal electrode. Such film stack finds application in the integration of AlN-based RF microelectromechanical systems devices. The process is based on Cl2/BCl3/Ar gas chemistry with added buffer gas in inductively coupled plasma reactive ion etching system. The new gas mixture overcomes a generic problem of etched surface roughness without significant drop in AlN etch rate. Using design of experiment, the process window is optimized for improving selectivity to Mo and reducing microtrenching while maintaining smooth etched surface. Finally, an etching rate of 280 nm min−1 with reliable etch stop on Mo electrode and smooth bottom surface is reported. The integration suitability of the developed etch process is tested by etching 2.0 to 5.0 µm size square shaped via holes in 1.0 µm thick (0 0 2) oriented piezoelectric AlN on 0.2 µm thick Mo electrode while integrating contour mode resonators. (technical note)

  15. Atomic precision etch using a low-electron temperature plasma

    Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2016-03-01

    Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

  16. New etching conditions for CR-39 for neutron dosimetry

    The results of investigations on track density and track size distributions of the PADC/CR-39 track detectors under different etching conditions are presented. The etching conditions are the combinations of chemical etching (CE) and electrochemical etching (ECE) at low and high frequency with different electric field strength and etching times. The results show that under the conditions reported, the 2-step regime (CE + HF ECE) produces larger tracks (∼2 to 3.5 times) than the 3-step (CE + LF ECE + HF ECE), while the track densities are almost the same. These etching conditions were applied to the CR-39 track detectors irradiated with the monoenergetic neutrons in the framework of the EURADOS-CENDOS joint neutron irradiation. The track densities and the size distributions for different neutron energies are reported. The results are well fitted with the previously evaluated response curve and are compared with similar measurements. (author) 5 figs., 3 tabs., 22 refs

  17. Microwave plasma etching of silicon and silicon dioxide

    Studies are being conducted on the etching characteristics of silicon and silicon dioxide in a microwave plasma etching system having a pulse modulated microwave source. The source can be adjusted for varying pulse widths and duty cycles. A slotted waveguide is used to radiate the microwaves from the source into a quartz chamber where the process gas (a mixture of sulfur hexaflouride and oxygen) is ionized. Magnetic field coils around the quartz chamber set up a condition of electron-cyclotron resonance inside the chamber so that more efficient ionization can occur. The resulting plasma flows out of the bottom of the chamber and onto a biased platform where the silicon samples are placed. Etch characteristics that are being examined include etch rate, etch anisotropy, and etching selectivity between silicon and silicon dioxide

  18. A step towards accreditation: A robustness test of etching process

    In the present study the robustness of the etching process used by our laboratory was assessed. The strategy followed was based on the procedure suggested by Youden. Critical factors for the process were estimated using both Lenth's method and Dong's algorithm. The robustness test evidences that particular attention needs to be paid to the control of the etching solution's temperature. - Highlights: • The evaluation of the robustness of the SSNTD etching process (KOH solution 6.0 N, 75 °C, 270 min) have considered several factors. • The results evidenced that the etching process can be considered robust. • The only critical factor is the etching solution's temperature. • A strict control about stability of temperature during the etching process is needed

  19. Experiment and Results on Plasma Etching of SRF cavities

    Upadhyay, Janardan [Old Dominion Univ., Norfolk, VA (United States); Im, Do [Old Dominion Univ., Norfolk, VA (United States); Peshl, J. [Old Dominion Univ., Norfolk, VA (United States); Vuskovic, Leposova [Old Dominion Univ., Norfolk, VA (United States); Popovic, Svetozar [Old Dominion Univ., Norfolk, VA (United States); Valente, Anne-Marie [Jefferson Lab., Newport News, VA (United States); Phillips, H. Lawrence [Jefferson Lab., Newport News, VA (United States)

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  20. Factors affecting the molybdenum line slope by reactive ion etching

    Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window

  1. Silicon nanostructures produced by laser direct etching

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser-generated melt. Trenches have been etched with a width of less than 70 nm. To expla...

  2. Reactive ion etching of polystyrene microspheres

    Domonkos, Mária; Ižák, Tibor; Štolcová, L.; Proška, J.; Kromka, Alexander

    Praha: ČVUT, 2013 - (Nežerka, V.; Rácová, Z.; Ryparová, P.; Tesárek, P.), s. 24-28 ISBN 978-80-01-05334-8. [Nanomateriály a nanotechnologie ve stavebnictví 2013. Praha (CZ), 12.06.2013-12.06.2013] R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : nanosphere lithography * reactive ion etching * polystyrene microspheres * Langmuir-Blodgett monolayer s Subject RIV: BL - Plasma and Gas Discharge Physics

  3. Influence of erbium, chromium-doped: Yttrium scandium-gallium-garnet laser etching and traditional etching systems on depth of resin penetration in enamel: A confocal laser scanning electron microscope study

    Vijayan, Vishal; Rajasigamani, K.; Karthik, K.; Maroli, Sasidharan; Chakkarayan, Jitesh; Haris, Mohamed

    2015-01-01

    Objective: This study was performed to assess the resin tag length penetration in enamel surface after bonding of brackets to identify which system was most efficient. Methodology: Our study was based on a more robust confocal microscopy for visualizing the resin tags in enamel. Totally, 100 extracted human first and second premolars have been selected for this study and were randomly divided into ten groups of 10 teeth each. In Group 1, the buccal enamel surface was etched with 37% phosphoric acid (3M ESPE), Group 2 with 37% phosphoric (Ultradent). In Groups 5, 6, and 7, erbium, chromium-doped: Yttrium scandium-gallium-garnet (Er, Cr: YSGG) laser (Biolase) was used for etching the using following specifications: Group 5 (1.5 W/20 Hz, 15 s), Group 6 (2 W/10 Hz, 15 s), and Group 7 (2 W/20 Hz, 15 s). In Groups 8, 9, and 10, Er, Cr: YSGG laser (Biolase) using same specifications and additional to this step, conventional etching on the buccal enamel surface was etched with 37% (3M ESPE) after laser etching. In Groups 1, 5, 6, 7, 8, 9, and 10 3M Unitek Transbond XT primer was mixed with Rhodamine B dye (Sigma-Aldrich, Germany) to etched surface and then cured for 20 s. In Group 2, Ultradents bonding agent was mixed with Rhodamine B. In Group 3, 3M Unitek Transbond PLUS, Monrovia, USA, which was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Group 4, with self-etching primer (Ultradent-Peak SE, USA) was mixed with Rhodamine B dye (Sigma-Aldrich, Germany). Later (3M Unitek, Transbond XT, Monrovia USA) [Figure 1] was used to bond the modified Begg brackets (T. P. Orthodontics) in Groups 1, 3, 5, 6, 7, 8, 9, and 10. In Groups 2, 4 Ultradent-Peak LC Bond was used to bond the modified brackets. After curing brackets were debonded, and enamel depth penetration was assessed using confocal laser scanning microscope. Results: Group J had a mean maximum depth of penetration of 100.876 μm, and Group D was the least having a maximum value of 44.254 μm. Conclusions: Laser

  4. Specifics of chemical etching of vanadium dioxide films in proximity to temperature of phase transformation metal-semiconductors

    A study was made on kinetics and mechanism of chemical etching of vanadium dioxide films in aqueous media (HNO3, HCl, HClO4, C2H2O4, KMnO4, FeCl3 solutions) close by the temperature of metal-semiconductor phase transformation. It is shown that phenomenon of abnormal increase of dissolution rate in the vicinity of temperature of metal-semiconductor phase transformation is typical for the process of chemical etching of vanadium dioxide films in acid media. Reduction of hydrogen ions takes place on vanadium dioxide at t>ttrans

  5. Admittance spectroscopy of CdTe/CdS solar cells subjected to varied nitric-phosphoric etching conditions.

    Proskuryakov, Y. Y.; Durose, K; Taele, B.; Welch, G. P.; Oelting, S.

    2007-01-01

    In this work we investigate the electric and structural properties of CdTe/CdS solar cells subjected to a nitric-phosphoric (NP) acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the cha...

  6. The role of ion bombardment in plasma-assisted etching

    Plasma-assisted etching methods are widely used in the manufacture of integrated circuit structures. The primary motivation for the transition from wet chemical etching to these ''dry'' plasma-based methods is the ability of the latter to transfer a lithographic pattern directionally, that is without appreciable etch-back or undercutting beneath the mask. It is reasonably well accepted that energetic ion bombardment of the etched surface is required for directional etching to occur, but the detailed mechanisms responsible for the ion-assisted etching are less clear. Basic studies of the physical and chemical phenomena which determine the fate of a surface immersed in a reactive gas glow discharge are hindered both by the vest parameter space associated with the plasma reactors and by the difficulty of performing reliable characterization of both the surface composition of the etched surface and the species incident on the etched surface. Consequently, studies have been carried out using beams of typical plasma species directed onto well-characterized surfaces in an ultrahigh vacuum environment. These experiments have provided valuable insight into many of the basic processes of importance in gas-surface chemistry, and although the relevance of these studies to real plasma-surface interactions has been questioned, a useful qualitative understanding of plasma-assisted etching processes has been obtained

  7. Modeling of the angular dependence of plasma etching

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x1015 atoms/cm2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  8. Symphony and cacophony in ion track etching: how to control etching results

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540. ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion tracks * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  9. Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

    Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

  10. Etch rates for (100) gallium arsenide using aqueous H2SO4:H2O2 and aqua regia based etchants

    Etch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2 O (3:1:1, 3:1:15), HCl:HNO3 (3:1), HCl:HNO3 :H2 O (1:1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane, probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present, and in fact, the polishing quality of the etchant is probably limited by the etching process which is present. 14 refs., 8 figs

  11. Microstructure Analysis of Thermally Etched Alumina Ceramics

    Fudurić Jelača, M.

    2008-12-01

    Full Text Available Ceramography is the art and science of preparation, examination, and evaluation of ceramic microstructures. Microstructure is the structure level approximately 0.1 to 100 μ m between the wavelength of visible light and the resolution limit of the naked eye. The microstructure includes most grains, secondary phases, grain boundaries, pores, microcracks, hardness microindentations. Investigation and evaluation of ceramic microstructure is very important because a number of mechanical, optical, thermal, electrical and other properties of ceramics are significantly affected by the microstructure. The techniques for ceramographic preparation are divided into five parts: sawing, mounting, grinding, polishing and etching.In this paper a method for preparation of a cold isostatically pressed high purity alumina ceramics (α-Al2O3 is described. Microstructure analysis of prepared ceramics was performed by means of optical microscopy (OM, scanning electron microscopy (SEM and atomic force microscopy (AFM. Porosity is determined on the polished sample; grain size is measured after thermal etching. The mean grain diameter is determined by means of lineal-intercept method, circular-intercept method and image analysis.

  12. Washable and wear-resistant superhydrophobic surfaces with self-cleaning property by chemical etching of fibers and hydrophobization.

    Xue, Chao-Hua; Li, Ya-Ru; Zhang, Ping; Ma, Jian-Zhong; Jia, Shun-Tian

    2014-07-01

    Superhydrophobic poly(ethylene terephthalate) (PET) textile surfaces with a self-cleaning property were fabricated by treating the microscale fibers with alkali followed by coating with polydimethylsiloxane (PDMS). Scanning electron microscopy analysis showed that alkali treatment etched the PET and resulted in nanoscale pits on the fiber surfaces, making the textiles have hierarchical structures. Coating of PDMS on the etched fibers affected little the roughening structures while lowered the surface energy of the fibers, thus making the textiles show slippery superhydrophobicity with a self-cleaning effect. Wettability tests showed that the superhydrophobic textiles were robust to acid/alkaline etching, UV irradiation, and long-time laundering. Importantly, the textiles maintained superhydrophobicity even when the textiles are ruptured by severe abrasion. Also colorful images could be imparted to the superhydrophobic textiles by a conventional transfer printing without affecting the superhydrophobicity. PMID:24942304

  13. Field emission characteristics of single crystal LaB6 field emitters fabricated by electrochemical etching method

    Single crystal lanthanum hexaboride (LaB6) field emission arrays with uniform tip structures have been achieved using the electrochemical etching method and the field emission characteristics are evaluated. A direct current voltage source is introduced in the etching process and phosphoric acid is used as the electrolyte solution. The SEM observation of the emitters reflects the feasibility of the electrochemical etching method for the fabrication of single crystal LaB6 FEA. The turn-on field of LaB6 FEA is low at 3.2 Vμm-1 and the emission current exhibits high stability during the 20-minute operation. Furthermore, even at low vacuum (>1.5 x 10-5 Torr) it still exhibits good emission properties and a strong ability to withstand the ion bombardment, which is useful for low operation vacuum microelectronic devices.

  14. Marginal microleakage in vitro study of occlusal fissures sealing prepared and etched or not with Er: YAG laser

    The aim of this in vitro study was to evaluate the degree of marginal microleakage in occlusal sealing by invasive techniques, after preparation with Er:YAG laser followed or not by Er:YAG laser etching and compared to the conventional technique. Thirty human premolars were divided into three groups: A (control group) - cavities were prepared with high speed and etched with 37% orthophosphoric acid; group B - cavities were prepared with Er:YAG (350 mJ, 4 Hz and 112 J /cm2) and etched with 37% orthophosphoric acid; group C - cavities were prepared with Er:YAG laser (350 mJ, 4 Hz and 112 J/cm2), and etched with Er:YAG laser (80 mJ, 4 Hz and 25 m/cm2). All cavities were treated with the same adhesive system and restored with flow composite according to manufacturer instructions. Teeth were submitted to thermal cycling procedures and immersed in 50% Silver Nitrate Solutions for 8 hours in total darkness. Teeth were sectioned longitudinally in the bucco-lingual direction, in slices of 1 mm thick. Each slice was immersed into photo developing solution under 16 hours of fluorescent light. Slices were photographed and microleakage was scored from 0 to 7 J by three standard examiners. Results showed statistically significant differences for group C (Er:YAG laser preparation and etching). We concluded that Er:YAG laser can be used for cavity preparation of occlusal sealing, like the conventional high speed method. However, this laser, used as enamel etching agent, could not promote an adequate surface for adhesive procedures. (author)

  15. Tensile bond strength of self-etching versus total-etching adhesive systems under different dentinal substrate conditions Resistência de união à tração de sistemas adesivos autocondicionantes versus de condicionamento total, em diferentes condições de substrato dentinário

    Alexandre Henrique Susin; Walison Arthuso Vasconcellos; José Roberto Cury Saad; Osmir Batista de Oliveira Junior

    2007-01-01

    The use of acid etchants to produce surface demineralization and collagen network exposure, allowing adhesive monomers interdiffusion and consequently the formation of a hybrid layer, has been considered the most efficient mechanism of dentin bonding. The aim of this study was to compare the tensile bond strength to dentin of three adhesive systems, two self-etching ones (Clearfil SE Bond - CSEB and One Up Bond F - OUBF) and one total-etching one (Single Bond - SB), under three dentinal subst...

  16. Otimização das superfícies dos implantes: plasma de titânio e jateamento com areia condicionado por ácido - estado atual Optimization of implant surfaces: titanium plasma spray and acid-etched sandblasting - current state

    Evandro Scigliano AMARANTE

    2001-06-01

    Full Text Available O objetivo deste trabalho foi analisar os resultados da literatura publicada sobre superfícies de implantes tratadas com plasma de titânio (TPS e jateadas com areia e tratadas com ácido (SLA. Isoladamente, a textura da superfície foi a característica mais marcante na promoção da osseointegração. Os estudos da topografia da superfície implantar no comportamento celular mostraram que o osso se deposita indistintamente em superfícies porosas ou lisas, seja em implantes de cerâmica, titânio, ou em ampla variedade de outras superfícies. A porosidade portanto, não é condição necessária para que ocorra aposição óssea, entretanto, desempenha um papel preponderante no percentual de aposição óssea sobre a superfície do implante, assim como na velocidade com que essa deposição ocorre. Nesta revisão destacou-se uma promissora superfície denominada SLA, tratada com jatos de areia (partículas pequenas seguida de ataque ácido. Os resultados demonstraram que tanto a rugosidade como o tratamento químico das superfícies podem influenciar bastante a força superficial de cisalhamento (resistência oferecida à remoção. Estas características da superfície do titânio, além de otimizar o procedimento, podem ainda, por exemplo, permitir a colocação dos implantes em função mais precocemente e ampliar a gama de aplicações possíveis para osso alveolar de densidade inferior, ou favorecer sua aplicação em osso regenerado.The aim of this review was to update the concepts regarding the preparation of the surfaces of titanium implants, focusing on TPS (titanium plasma-sprayed implants and SLA (sandblasted and acid etched implants. Texture was the most remarkable isolated feature, regarded as an osseointegration promoter. In a comprehensive review of the effects of implant surface topography on cell behavior, one can verify that there is bone apposition onto the implant surface regardless of its characteristics: polished or

  17. Fabrication of beta-PVDF membranes by track etching and specific functionalization of nano-pores

    Poly(vinylidene fluoride)(β-PVDF) nano-porous membranes were made by chemical revealing of tracks induced from swift heavy ions irradiation. Pore opening and radii can be varied in a controllable manner with the etching time. nano-pores size in nano-meter scale (from 12 nm to 50 nm) appears to be linearly dependent to the etching time. It was then necessary to adapt the characterization tools to these membranes. Consequently, we resorted to the use of structural analysis methods (Scanning Electron Microscopy, Small Angle Neutron Scattering) and developed evaluation methods of the membranes transport properties like gas permeation and ionic diffusion. Results obtained confirm the pores opening (break through) and the hydrophobicity of material, which we have modified with hydrophilic molecules. In this precise case, the grafting of acrylic acid was initiated by the radicals still remains after track-etching (called radio-grafting). This key result was obtained by a study of Electron Paramagnetic Resonance. The labelling of introduced chemical functionalities with fluorescent probes was a very effective mean to visualize very few amounts of molecules by confocal microscopy. The radio-grafting was found specifically localized inside etched tracks. The protocol offers the possibility to create a double functionality, the one localized inside the nano-pores and the other on the surface of membranes. The modification of radio-grafting parameters (the acrylic acid concentration, solvent nature, use of transfer agent) and the chemical properties of the nano-pore walls have a direct incidence on the transport properties. (author)

  18. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  19. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  20. Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching

    We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O2 exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with ≈0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.

  1. Miniature pulse compressor of deep-etched gratings.

    Jia, Wei; Zhou, Changhe; Feng, Jijun; Dai, Enwen

    2008-11-10

    We propose a miniature pulse compressor that can be used to compensate the group velocity dispersion that is produced by a commercial femtosecond laser cavity. The compressor is composed of two identical highly efficient deep-etched transmissive gratings. Compared with prism pairs, highly efficient deep-etched transmissive grating pairs are lightweight and small. With an optimized groove depth and a duty cycle, 98% diffraction efficiency of the -1 transmissive order can be achieved at a wavelength of 800 nm under Littrow conditions. The deep-etched gratings are fabricated in fused silica by inductively coupled plasma etching. With a pair of the fabricated gratings, the input positively chirped 73.9 fs pulses are neatly compressed into the nearly Fourier transform-limited 43.2 fs pulses. The miniature deep-etched grating-based pulse compressor should be of interest for practical applications. PMID:19002230

  2. Development and characterization of multilevel metal interconnection etch process

    Dang, Kim

    1997-08-01

    A more robust chlorine chemistry based reactive ion etch (RIE) process was developed, characterized and optimized to anisotropically etch the interconnecting metal layers for use in the fabrication of CMOS and BiCMOS IC devices, using the Lam 4600 single wafer etcher. The titanium nitride and titanium silicide buried layer, used in the metal 1 structure, present unique constraints on etch selectivity to the underlying film. The process must clear metal stringers with minimal lateral etching of the aluminum during the tiN/Ti etch and overetch steps. The new optimized process meets all requirements imposed by advanced technologies, such as vertical metal sidewalls, wide process latitude, tight CD control, minimal of TEOS oxide underlayer, less sensitivity to photoresist pattern, excellent reliability and reproducibility, and lower level of polymer (reaction by- product) build-up in reactor chamber which could lead to metal corrosion and cluster defects.

  3. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  4. Evaluation of track-etch detectors

    A study was conducted to evaluate the precision and accuracy of Track-Etch passive radon detectors manufactured by the Terradex Corporation. Four configurations of these detectors were exposed to known radon concentrations in the Eastern Environmental Radiation Facility radon chamber under varying exposure regimines and sent to Terradex for processing and readout. Data reported by Terradex and our own exposure concentrations were used to calculate calibration numbers for each configuration which were then compared to calibration numbers used by Terradex. Results of our study indicate that groups of detectors exposed together and processed together demonstrate similarity in response. Groups of detectors exposed and processed at different times, however, did not always agree with each other nor with published Terradex calibration numbers

  5. A survey on the reactive ion etching of silicon in microtechnology

    Jansen, Henri; Gardeniers, Han; Boer; Elwenspoek, Miko; Fluitman, Jan

    1996-01-01

    This article is a brief review of dry etching as applied to pattern transfer, primarily in silicon technology. It focuses on concepts and topics for etching materials of interest in micromechanics. The basis of plasma-assisted etching, the main dry etching technique, is explained and plasma system configurations are described such as reactive ion etching (RIE). An important feature of RIE is its ability to achieve etch directionality. The mechanism behind this directionality and various plasm...

  6. Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH

    A. Charbonnieras; Leblois, T.G.; Tellier, C. R.

    2000-01-01

    This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant...

  7. The two-step electrochemical etching technique applied for polycarbonate track etched detectors

    The two-step electrochemical etching technique was optimized by varying the electrical field strength and applied to the polycarbonate track detector, Makrofol DE, for neutron dosimetry and radon monitoring using an electric field strength of 26.7 kV·cm-1.In comparison with the previously applied combination of chemical and electrochemical etching, the neutron response was increased, above a threshold energy of about 1.5 MeV, by a factor of 3 to a value of 52 tracks·cm-1·mSv-1. The background track density and its standard deviation of (6±2) cm-2 allows the detection of about 0.1 mSv. The alpha energy range was extended from an alpha window of about 1.5 MeV to an alpha energy range of 0.5 to 4 MeV. (author)

  8. Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

    Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of −20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min−1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around −20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection

  9. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt0 followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  10. Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask

    This research highlights a superior glass-wet-etch technique which enables a glass wafer to be etched for more than 20 h in 49 wt% hydrofluoric acid (HF) only with Cr/Au film and a common positive photoresist, AZ4330. We demonstrated that pits on the wet-etched glass wafer were generated not only due to HF diffusion through the Cr/Au film but also due to pinholes on the Cr/Au films created by the diffusion of the Cr/Au etchant through a photoresist etching-mask during the Cr/Au wet etching process. These two types of diffusion, HF diffusion and Cr/Au etchant diffusion, were eliminated by the thermal curing of a photoresist (PR), AZ4330, before the Cr/Au wet etching process. The curing process allowed the PR to dehydrate, increased the hydrophobicity, and prevented the diffusion of the hydrophilic HF and Cr/Au etchant. Optimization of the curing process was performed, showing that curing at 130 °C for 20 min was the proper condition. With the optimized process, a 525 µm thick borosilicate glass wafer was penetrated with 49%wt HF. A fused silica wafer 525 µm thick was also wet-etched and penetrated with 49 wt% HF at 10 h. Moreover, no pits were found in wet etching of the fused silica for 20 h in 49 wt% HF. These findings demonstrate that the proposed technique allows the wet etching of a glass wafer for more than 20 h in 49%wt HF, the best result thus far. We fabricated a glass substrate with a 217.0 µm deep cavity and a penetrating through-via using the proposed technique, proving the feasibility of the product as an optical component with a surface roughness of 45.5 Å in the cavity. (paper)

  11. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  12. Energy dispersive X-ray spectroscopy analysis of Si sidewall surface etched by deep-reactive ion etching

    Matsutani, Akihiro; Nishioka, Kunio; Sato, Mina

    2016-06-01

    We investigated the composition of a passivation film on a sidewall etched by deep-reactive ion etching (RIE) using SF6/O2 and C4F8 plasma, by energy-dispersive X-ray (EDX) spectroscopy. It was found that the compositions of carbon and fluorine in the passivation film on the etched sidewall depend on the width and depth of the etched trench. It is important to understand both the plasma behavior and the passivation film composition to carry out fabrication by deep-RIE. We consider that these results of the EDX analysis of an etched sidewall will be useful for understanding plasma behavior in order to optimize the process conditions of deep-RIE.

  13. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  14. Porous silicon formation during Au-catalyzed etching

    The formation of “black” nano-textured Si during the Au-catalyzed wet-chemical etch process was investigated with respect to photovoltaic applications. Cross-sectional scanning electron microscopy (SEM) images recorded at different stages of the etch process exhibit an evolution of a two-layer structure, consisting of cone-like Si hillocks covered with a nano-porous Si (np-Si) layer. Optical measurements confirm the presence of a np-Si phase which appears after the first ∼10 s of the etch process and continuously increases with the etch time. Furthermore, the etch process was investigated on Si substrates with different doping levels (∼0.01–100 Ω cm). SEM images show a transition from the two-layer morphology to a structure consisting entirely of np-Si for higher doping levels (<0.1 Ω cm). The experimental results are discussed on the basis of the model of a local electrochemical etch process. A better understanding of the metal-catalyzed etch process facilitates the fabrication of “black” Si on various Si substrates, which is of significant interest for photovoltaic applications

  15. Etching of oxynitride thin films using inductively coupled plasma

    In this study, silicon oxynitride (SiON) has been etched in a C2F6 inductively coupled plasma. The process parameters examined include a radio frequency source power, bias power, pressure, and C2F6 flow rate. For process optimization, a statistical experimental design was employed to investigate parameter effects under various plasma conditions. The etch rate increased almost linearly with increasing the source or bias power. Main effect analysis revealed that the etch rate is dominated by the source power. The C2F6 flow rate exerted the least impact on both etch rate and profile angle. It was estimated that the C2F6 effect is transparent only as the etchant is supplied sufficiently. Depending on the pressure levels, the etch rate varied in a complicated way. Parameter effects on the profile angle were very small and the profile angle varied between 83 deg. and 87 deg. for all etching experiments. In nearly all experiments, microtrenching was observed. The etch rate and profile angle, optimized at 1000 W source power, 30 W bias power, 6 mTorr pressure, and 60 sccm C2F6 flow rate, are 434 nm/min and 86 deg., respectively

  16. Super-selective cryogenic etching for sub-10 nm features.

    Liu, Zuwei; Wu, Ying; Harteneck, Bruce; Olynick, Deirdre

    2013-01-11

    Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF(6)/O(2) gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 μm) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 μm was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features. PMID:23220824

  17. Dry etching technologies for the advanced binary film

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  18. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. PMID:26513735

  19. Manganese-tuned chemical etching of a platinum-copper nanocatalyst with platinum-rich surfaces

    Huang, Y. Y.; Zhao, T. S.; Zhao, G.; Yan, X. H.; Xu, K.

    2016-02-01

    This work presents a modified chemical etching strategy to fabricate binary metal nanocatalysts with large active areas. The strategy employs PtCu alloy particles with Pt-rich outer layers as the precursor and manganese species to manipulate the acid leaching processes. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy techniques are used to analyze the catalyst structures and the tuning mechanism of manganese species during etching. It is found that the introduction of manganese species allows more Pt active sites to be formed onto the catalyst surface after etching, possibly due to reduction in the number of Pt atoms enclosed inside particles. The electrochemically active surface area of the synthetic MnA-PtCu/C catalyst increases by 90% relative to commercial Pt/C catalyst. As a result of the increase in active areas and the additional promotion effects by Cu, the MnA-PtCu/C catalyst reveals a methanol oxidation activity 1.7 and 4.0 times higher than that of the synthetic PtCu/C and commercial Pt/C catalysts, respectively.

  20. Characterisation and comparison of microfluidic chips formed using abrasive jet micromachining and wet etching

    The electro-osmotic flow limit of detection and separation efficiency of glass channels machined using abrasive jet micromachining (AJM) were measured and compared with those for channels machined using conventional wet etching with hydrofluoric acid. It was found that the electro-osmotic mobility in AJM channels was similar to that in wet-etched channels, ∼4 × 10−4 cm2 V−1 s−1 for 20 µm channels, despite a two-decade difference in surface roughness. Similarly, limits of detection measured on the two types of chips were roughly comparable to each other and on the order of 1 nM (injected sample concentration). The separation efficiency calculated from TAMRA dye injections in AJM channels, however, was found to be significantly lower, ∼0.2–0.25 times, than that in wet-etched channels. The effect of surface roughness on the separation efficiency and electro-osmotic mobility in micro-channels is discussed in the context of the literature. Furthermore, experimental data concerning the effect of the AJM process conditions on the surface roughness are presented and discussed with the aim of exploring methods to improve surface quality in AJM. Commercially available self-adhesive elastomeric masks were found to be particularly suitable for rapid prototyping as they provided reasonably high resolution and machining flexibility. (paper)

  1. Comparision of Shear Bond Strength of Stainless Steel and Ceramic Brackets at 24 Hours after Etching Enamel with Different Proportions of Acidulated Phosphate Fluoride

    Abinaya; Karthikeyan; Sarvanan; Vikram, Raj

    2014-01-01

    Aims and Objectives: To evaluate and compare the shear bond strength of stainless steel brackets and ceramic brackets at 24h after etching the enamel with acidulated phosphate fluoride gel (1.23% APF) at different proportions (40%,30%,20%) incorporated in conventional etchant (37% phosphoric acid). Materials and Methods: Eighty premolars (maxillary and mandibular first and second premolars) extracted for orthodontic purpose has been selected for the study and samples were divided into 4 groups containing 10 teeth each. Comprised of teeth etched Group 1 with 40% of APF gel etchant is Group 2 teeth etched with 30% of APF gel in Group 3 teeth etched with 20% of APF gel etchant and Group 4 teeth were etched with conventional etchant (37% phosphoric acid). Results: The experimental group of Acidulated Phosphate Fluoride (APF) at different proportion (40%, 30%, 20%) incorporated with etchant application for 40s on the enamel surface at 24h indicated that group 4 showed the higher bond strength of all other remaining groups and the groups 1, 2 and 3 showed satisfactory bond strength. The statistical evaluation also revealed that the bond strength of control group (37% phosphoric acid) was greater than those of experimental groups. Conclusion: The present study results shows that the ceramic brackets have higher bond strength than stainless steel brackets (material wise). PMID:25302260

  2. Laser etching of metals in neutral salt solutions

    Datta, M.; Romankiw, L. T.; Vigliotti, D. R.; von Gutfeld, R. J.

    1987-12-01

    We report new findings that relate to rapid maskless laser etching of steel and stainless steel in neutral solutions of sodium chloride, sodium nitrate, and potassium sulfate. Etch rates have been determined as a function of laser power, laser on-time, and solution concentration. The morphology of laser-etched holes obtained in these solutions was compared with holes obtained in pure water. Results indicate that some controlled melting occurs under certain laser conditions in addition to the metal dissolution process induced by the locally intense heat of the laser beam.

  3. Chlorine-based plasma etching of GaN

    Shul, R.J.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Constantine, C.; Baratt, C. [Plasma-Therm, Inc., Saint Petersburg, FL (United States)

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  4. Structural and magnetic etch damage in CoFeB

    A detailed understanding of the interfacial properties of thin films used in magnetic media is critical for the aggressive component scaling required for continued improvement in storage density. In particular, it is important to understand how common etching and milling processes affect the interfacial magnetism. We have used polarized neutron reflectometry and transmission electron microscopy to characterize the structural and magnetic properties of an ion beam etched interface of a CoFeB film. We found that the etching process results in a sharp magnetic interface buried under a nanometer scale layer of non-magnetic, compositionally distinct material

  5. Cryogenic deep reactive ion etching of silicon micro and nanostructures

    Sainiemi, Lauri

    2009-01-01

    This thesis focuses on cryogenic deep reactive ion etching (DRIE) and presents how it can be applied to the fabrication of silicon micro- and nanostructures that have applications in microfluidics and micromechanics. The cryogenic DRIE process relies on inductively coupled SF6/O2 plasma at temperatures below -100 °C. Low etching temperatures can cause some photoresist materials to crack, but Al2O3 has been shown to be a very well-suited masking material for cryogenic etching. The anisotropy o...

  6. Anisotropic etching of tungsten-nitride with ICP system

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  7. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin

    Leandro Afonso Guimarães

    2012-04-01

    Full Text Available This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5. The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT or absolute ethanol wet-bonding (EBT. The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB. Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min. Data were analyzed by two-way ANOVA and Tukey's test (a = 5%. The failure modes were verified using a stereomicroscope (40'. For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05. The highest bond strength was observed for SB, regardless of the bonding technique (p < 0.05. No significant interaction between adhesives and bonding techniques was noticed (p = 0.597. There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  8. Investigation of electrochemical etch differences in AlGaAs heterostructures using Cl{sub 2} ion beam assisted etching

    Anglin, Kevin, E-mail: kevin.r.anglin@gmail.com; Goodhue, William D. [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 and Department of Physics and Applied Physics, University of Massachusetts Lowell, 1 University Ave., Lowell, Massachusetts 01854 (United States); Swint, Reuel B.; Porter, Jeanne [Massachusetts Institute of Technology Lincoln Laboratory, 244 Wood St., Lexington, Massachusetts 02420 (United States)

    2015-03-15

    A deeply etched, anisotropic 45° and 90° mirror technology is developed for Al{sub x}Ga{sub 1−x}As heterostructures using a Cl{sub 2} ion beam assisted etching system. When etching vertically, using a conductive low-erosion Ni mask, electrochemical etch differences between layers with various Al mole fractions caused nonuniform sidewall profiles not seen in semi-insulating GaAs test samples. These variations, based on alloy composition, were found to be negligible when etching at a 45°. A Si{sub 3}N{sub 4}-Ni etch mask is designed in order to electrically isolate charge buildup caused by the incoming Ar{sup +} ion beam to the Ni layer, preventing conduction to the underlying epitaxial layers. This modification produced smoothly etched facets, up to 8 μm in depth, enabling fabrication of substrate–surface-emitting slab-coupled optical waveguide lasers and other optoelectronic devices.

  9. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells.

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-12-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time. PMID:26754938

  10. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-01-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time.

  11. Selective wet etching of Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change thin films in thermal lithography with tetramethylammonium

    Deng, Changmeng [Chinese Academy of Sciences, Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Shanghai (China); Graduate School of Chinese Academy of Sciences, Beijing (China); Geng, Yongyou [Chinese Academy of Sciences, Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Shanghai (China); Wu, Yiqun [Chinese Academy of Sciences, Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Shanghai (China); Ministry of Education, Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Harbin (China)

    2011-09-15

    In this paper, we study Ge{sub 2}Sb{sub 2}Te{sub 5} phase-change film as a promising inorganic photoresist using organic alkaline: tetramethylammonium hydroxide (TMAH) solution, instead of inorganic alkali or acid as etchant. The basic etching properties are investigated by prior and posterior annealing Ge{sub 2}Sb{sub 2}Te{sub 5} films. Selectivity is found to be dependent on concentration of TMAH. There is a good selectivity in the 25% TMAH solution, in which the amorphous state is etched away, whereas the crystalline state remains. The etching rate decreases when the concentration of TMAH is diluted; and an opposite selectivity, compared with 25% TMAH solution, is observed in the 0.125% TMAH solution. Selective etching with laser crystallization in different power levels is also studied, and an excellent wet selectivity in the 25% TMAH solution is obtained. The remaining crystalline lines are observed by atomic force microscopy. The surface roughness after etching is at a good level. The selective wet-etching mechanism is also discussed. (orig.)

  12. Methods of removal of defects arising at liquid etching of polycrystalline silicon

    Ivanchykou A. E.

    2008-02-01

    Full Text Available The paper presents a model of generation of defects having the form of spots on the surface of the polycrystalline silicon during processing of semiconductor wafers with hydrofluoric acid based etchant, and a model of removal of such defects in chemical solutions. The authors investigate how the centrifuge speed during drying and the relief of structures, produced on the plate, effect the number of defects. It is shown that there is a possibility to remove defects by chemical treatment in the peroxide-ammonia solutions (PAS and also by sequence of chemical cleaning in Karo mixture, SiO2 etching and treatment in PAS.

  13. Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

    Pushpendra Kumar

    2007-01-01

    Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

  14. Etched glass self-assembles into micron-size hollow platonic solids

    Boukhalfa, Sofiane

    2012-10-03

    The interaction between the spreading of a hydrofluoric acid-based drop on a glass surface and its etching rate gives rise to hollow crystals of various shapes, including cubes, triangles, and icosahedra. These geometries are dependent on their position with respect to the contact line, where a rim forms by agglutination, similar to the formation of a coffee stain. Atomic force microscopy indentation and transmission electron microscopy observations revealed that these crystals are hollow ammonium-fluosilicate-based cryptohalite shells. © 2012 American Chemical Society.

  15. Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching

    Roozeboom, F Fred; Bruele, van den, FJ; Creyghton, YLM Yves; Poodt, P; Kessels, WMM Erwin

    2015-01-01

    Conventional (3D) etching in silicon is often based on the ‘Bosch’ plasma etch with alternating half-cycles of a directional Sietch and a fluorocarbon polymer passivation. Also shallow feature etching is often based on cycled processing. Likewise, ALD is time-multiplexed, with the extra benefit of half-reactions being self-limiting, thus enabling layer-by-layer growth in a cyclic process. To speed up growth rate, spatial ALD has been successfully commercialized for large-scale and high-rate d...

  16. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  17. Precise etching of fused silica for micro-optical applications

    The current challenge of laser processing is the high quality etching of transparent materials for micro-optical applications. Laser ablation of transparent material with UV and ultrashort pulse lasers is characterized by a high etch rate and a considerable surface roughness. The combination of specific laser processing techniques, e.g., scanning contour mask technique and direct writing with a small laser spot, with laser-induced backside wet etching (LIBWE) allows both the direct machining of diffractive as well as refractive topographies into dielectric materials with almost optical quality. The etching of variable depth gratings and free-form surface topographies with a PV-value of less than 500 nm, a nanometer depth resolution, and a low roughness of less than 10 nm rms is presented and demonstrates the capabilities of this laser processing approach

  18. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  19. Cryogenic rf test of the first plasma etched SRF cavity

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  20. Removal of field and embedded metal by spin spray etching

    Contolini, R.J.; Mayer, S.T.; Tarte, L.A.

    1996-01-23

    A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment. 6 figs.

  1. Reactive Ion Etching in a VHF Parallel Plate Reactor

    Dahi, H.; Murnick, D. E.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    VHF (very high frequency) capacitive plasma reactors may allow development of new RIE (reactive ion etching) systems with high etch rates, excellent uniformity and anisotropy and low damage. High ion and radical fluxes can be obtained by raising the RF (radio frequency) frequency which increases plasma density dramatically at a fixed voltage. The effects of variation in frequency (25-120 MHz), pressure (10-250 mTorr), and flow rate (1-100 sccm) in a CF4 discharge have been investigated. The RF current versus voltage characteristics and spatially resolved optical emission are used as diagnostics. Experiments on etch rates, etch uniformity and anisotropy in silicon, silicon dioxide and silicon nitride will be discussed. Results of fluid model simulations are used to interpret the experimental data.

  2. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO2 layer, respectively. In particular, the increase of SiOx(x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  3. Analysis of machining characteristics in electrochemical etching using laser masking

    Electrochemical etching using laser masking (EELM), which is a combination of laser beam irradiation for masking and electrochemical etching, allows the micro fabrication of stainless steel without photolithography technology. The EELM process can produce various micro patterns and multilayered structures. In this study, the machining characteristics of EELM were investigated. Changes in characteristics of recast layer formation and the protective effect of the recast layer according to the laser masking conditions and electrochemical etching conditions were investigated by field emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) and X-ray photoelectron spectroscopy (XPS). The oxidized recast layer with a thickness of 500 nm was verified to yield a superior protective effect during electrochemical etching and good form accuracy. Finally, micro patterns and structures were fabricated by EELM.

  4. GaN Nanowires Synthesized by Electroless Etching Method

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  5. Microleakage after Thermocycling of Three Self-Etch Adhesives under Resin-Modified Glass-Ionomer Cement Restorations

    Sabine O. Geerts

    2010-01-01

    Full Text Available This study was designed to evaluate microleakage that appeared on Resin-Modified Glass-Ionomer Cement (RMGIC restorations. Sixty class V cavities (h×w×l=2mm×2mm×3mm were cut on thirty extracted third molars, which were randomly allocated to three experimental groups. All the buccal cavities were pretreated with polyacrylic acid, whereas the lingual cavities were treated with three one-step Self-Etch adhesives, respectively, Xeno III (Dentsply Detrey GmbH, Konstanz, Germany, iBond exp (Heraeus Kulzer gmbH & Co. KG, Hanau, Germany, and Adper Prompt-L-Pop (3M ESPE AG, Dental products Seefeld, Germany. All cavities were completely filled with RMGIC, teeth were thermocycled for 800 cycles, and leakage was evaluated. Results were expressed as means ± standard deviations (SDs. Microleakage scores were analysed by means of generalized linear mixed models (GLMMs assuming an ordinal logistic link function. All results were considered to be significant at the 5% critical level (<.05. The results showed that bonding RMGIC to dentin with a Self-Etch adhesive rather than using polyacrylic acid did not influence microleakage scores (=.091, except for one tested Self-Etch adhesive, namely, Xeno III (<.0001. Nevertheless, our results did not show any significant difference between the three tested Self-Etch adhesive systems. In conclusion, the pretreatment of dentin with Self-Etch adhesive system, before RMGIC filling, seems to be an alternative to the conventional Dentin Conditioner for the clinicians as suggested by our results (thermocycling and others (microtensile tests.

  6. Parallel fabrication of high-aspect-ratio all-silicon grooves using femtosecond laser irradiation and wet etching

    Li, Yanna; Chen, Tao; Pan, An; Li, Cunxia; Tang, Litie

    2015-11-01

    This paper introduces a simple method using 800 nm femtosecond laser irradiation and wet etching with a hydrofluoric (HF) acid solution for the parallel fabrication of high-aspect-ratio all-silicon groove arrays. In this method, one laser beam was divided into five beams by a diffractive optical element. Five laser-induced structure change (LISC) zones were formed in the silicon simultaneously with a single scan of the divided beams, and then the materials in the LISC zones were etched by HF acid solution to form groove arrays. Via this method, all-silicon grooves with aspect ratios up to 39.4 were produced, and the processing efficiency could be increased by five times in contrast with that of the single laser beam irradiation. Furthermore, high-aspect-ratio grooves with near uniform morphologies were fabricated using this method in silicon wafers with different crystal orientations.

  7. An electrochemical etching system for solid state nuclear track detector

    The electrochemical etching system used for neutron energy measurement consists of variable power supply, step-up transformer, etching cell and heater. The variable power supply can provide frequency with 1 Hz-100 MHz and maximum voltage output 5 V. The max. output voltage after power amplifier and step-up transformer will be 1600 kilovolt (2 KHz). It can provide electrical field with 100 kV/cm for CR-39 detector (300 um). (authors)

  8. Dry etching of single crystal PMN-PT piezoelectric material.

    Agnus, Joël; Alexandru Ivan, Ioan; Queste, Samuel

    2011-01-01

    International audience During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.

  9. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  10. Mechanism of anisotropic plasma etching of tungsten and silicon

    Highly selective anisotropic plasma etching of tungsten and tungsten polycide films is required for ultra-fine gate fabrication of VLSI devices. However, a trade-off exists in reactive ion etching (RIE) between selectivity and anisotropy. The same dilemma takes place in microwave (or ECR) plasma etching of these films. Hence, a new technique is needed in spite of the conventional gas mixing technique. Etching techniques such as gas and bias chopping and multi-step etch have been proposed by the authors and found to be suitable for state-of-the-art processing. Here, the authors show the mechanism of W and its polycide etching and discuss the generalized anisotropic etching method. In order to study the chemical reaction of pure reactive ions with surface atoms, experiments were carried out in an ultrahigh vacuum environment using a mass selected, low energy ion beam irradiation system. Chemical sputtering yields of W under isotopically pure F/sup +/, Cl/sup +/, and Br/sup +/ ion impingement were measured as a function of ion energy in the 100 - 3000 eV range using a quartz crystal oscillating microbalance yield monitor technique. The chemical sputtering yields of Si, and C were also obtained to clarify polycide and W etching using a photoresist mask (the main element is C). The chemical sputtering yields of the halogen atomic ions (e.g., Cl/sup +/) were derived by subtracting the sputtering yields of the nearest inert gas ions (e.g., Ar/sup +/) from the total sputtering yields of the halogen atomic ions. Measurements were carried out in an ultrahigh vacuum environment with relatively high ion current. Hence the effect of neutrals on the yields is thought to be negligibly small

  11. Aperture effects in plasma etching of deep silicon trenches

    The aperture effect in plasma etching of deep trenches is theoretically investigated. Three possible mechanisms are proposed: limiting of ion and radical delivery to the etching region and redeposition of the reaction products. Integral equations are derived and numerically solved for rectangular trench profiles and a cosine law for surface scattering of the active particles. The approach suggested allows generalization for multicomponent plasma systems. (author)

  12. Plasma transfer and technology of ion plasma etching

    Technological process of ion plasma etching (IPE) is working out according to the idea about of elementary process which take place on the treatment surface. The principal mechanism of interaction between bombardment ions and atoms of surface is the process of transfer of impulse during spring collisions of displacement atoms. The final result of atom collisions may consist in what surface atoms will receive sufficient impulse and energy for extracting its from etching surface of material

  13. Plasma chemical etching of gallium arsenide in chlorine

    One of the most promising methods, used for the examination of the kinetics and determination of the moments of the start and completion of the processes of plasma chemical etching of a wide range of inorganic materials is optical emission spectroscopy. Therefore, the aim of this work was to examine the kinetic relationships of etching of gallium arsenide in chlorine plasma and determine the possibilities of the optical emission spectroscopy for examination and control of the process

  14. Particle precipitation in connection with KOH etching of silicon

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper; Thomsen, Erik Vilain

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi...... in terms of the change in free energy of adsorption, the Pourbaix diagram, the electrochemical double- layer thickness and silicon dopant type, and concentration. (C) 2004 The Electrochemical Society....

  15. Controlled Layer-by-Layer Etching of MoS₂.

    Lin, TaiZhe; Kang, BaoTao; Jeon, MinHwan; Huffman, Craig; Jeon, JeaHoo; Lee, SungJoo; Han, Wei; Lee, JinYong; Lee, SeHan; Yeom, GeunYoung; Kim, KyongNam

    2015-07-29

    Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these materials at the atomic level will be a key factor in the future development of MoS2 devices. In this study, we propose a layer-by-layer removal of MoS2 using the atomic layer etching (ALET) that is composed of the cyclic processing of chlorine (Cl)-radical adsorption and argon (Ar)(+) ion-beam desorption. MoS2 etching was not observed with only the Cl-radical adsorption or low-energy (eV) Ar(+) ion-beam desorption steps; however, the use of sequential etching that is composed of the Cl-radical adsorption step and a subsequent Ar(+) ion-beam desorption step resulted in the complete etching of one monolayer of MoS2. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) indicated the removal of one monolayer of MoS2 with each ALET cycle; therefore, the number of MoS2 layers could be precisely controlled by using this cyclical etch method. In addition, no noticeable damage or etch residue was observed on the exposed MoS2. PMID:26091282

  16. Etching of silicon surfaces using atmospheric plasma jets

    Paetzelt, H.; Böhm, G.; Arnold, Th

    2015-04-01

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min-1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets.

  17. Etching of silicon surfaces using atmospheric plasma jets

    Local plasma-assisted etching of crystalline silicon by fine focused plasma jets provides a method for high accuracy computer controlled surface waviness and figure error correction as well as free form processing and manufacturing. We investigate a radio-frequency powered atmospheric pressure He/N2/CF4 plasma jet for the local chemical etching of silicon using fluorine as reactive plasma gas component. This plasma jet tool has a typical tool function width of about 0.5 to 1.8 mm and a material removal rate up to 0.068 mm3 min−1. The relationship between etching rate and plasma jet parameters is discussed in detail regarding gas composition, working distance, scan velocity and RF power. Surface roughness after etching was characterized using atomic force microscopy and white light interferometry. A strong smoothing effect was observed for etching rough silicon surfaces like wet chemically-etched silicon wafer backsides. Using the dwell-time algorithm for a deterministic surface machining by superposition of the local removal function of the plasma tool we show a fast and efficient way for manufacturing complex silicon structures. In this article we present two examples of surface processing using small local plasma jets. (paper)

  18. Etching process of silicon dioxide with nonequilibrium atmospheric pressure plasma

    An ultrahigh etch rate (14 μm/min) of SiO2 and a high selectivity of SiO2/Si over 200 were achieved using a microwave-excited nonequilibrium atmospheric pressure plasma source employing He, NF3, and H2O gases, which have been developed for application to microelectromechanical systems and other bionanotechnology fields. In order to clarify the etching mechanism, two diagnostic methods have been performed: (1) imaging of plasma emission with an intensified charge-coupled device camera, and (2) absorption measurements using Fourier transform infrared spectroscopy. The etching characteristics are discussed in relation to the spatial distributions of the species involved. The etch rate depended considerably on the distance between the plasma and the substrate. Some radicals generated from the feed gases reached the substrate directly, while other radicals recombined into different species, which reached the substrate. An abundance of HF molecules were produced through a reaction between radicals generated by the atmospheric pressure discharge of NF3 and H2O. From these measurements, it has been found that the HF molecules generated played a role in producing the high etch rate of SiO2 and high etch selectivity of SiO2/Si

  19. The grand challenges of plasma etching: a manufacturing perspective

    Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the mid 80s to ∼0.01 µm today. The manufacturing of these devices requires overcoming a series of challenges, ranging from continuous innovation on device integration to extend Moore's law to breaking tradeoffs on the perennial challenge of aspect ratio-dependent etching. In this paper, we will review four key areas in etch manufacturing: uniformity, defects, surface precision and ‘sticky’/non-volatile etch materials. In the uniformity section, we will discuss the challenges for microscopic uniformity, such as localized feature dimension variations; macroscopic uniformity, such as performance at the extreme edge of the wafer; and repeatable uniformity, meaning wafer-to-wafer, lot-to-lot and chamber-to-chamber performance. While defect management is successful with in situ plasma cleans, one must be cognizant of the choice of clean chemistry. In surface precision, we look at the approach of atomic layer etching and how it can be successful in a manufacturing environment. Finally, in the non-volatile material section, we review technology drivers for DRAM (dynamic random access memory) and NAND flash memory in the microelectronics Si industry, with focus on the utilization of such materials and what it means to etch equipment manufacturers. (topical review)

  20. Etching of germanium-tin using ammonia peroxide mixture

    The wet etching of germanium-tin (Ge1-xSnx) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge1-xSnx is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge1-xSnx surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge0.918Sn0.082 samples. Both root-mean-square roughness and undulation periods of the Ge1-xSnx surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge1-xSnx using APM and may be used for the fabrication of Ge1-xSnx-based electronic and photonic devices

  1. Etching of germanium-tin using ammonia peroxide mixture

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  2. Vapor etching of nuclear tracks in dielectric materials

    Musket, Ronald G.; Porter, John D.; Yoshiyama, James M.; Contolini, Robert J.

    2000-01-01

    A process involving vapor etching of nuclear tracks in dielectric materials for creating high aspect ratio (i.e., length much greater than diameter), isolated cylindrical holes in dielectric materials that have been exposed to high-energy atomic particles. The process includes cleaning the surface of the tracked material and exposing the cleaned surface to a vapor of a suitable etchant. Independent control of the temperatures of the vapor and the tracked materials provide the means to vary separately the etch rates for the latent track region and the non-tracked material. As a rule, the tracked regions etch at a greater rate than the non-tracked regions. In addition, the vapor-etched holes can be enlarged and smoothed by subsequent dipping in a liquid etchant. The 20-1000 nm diameter holes resulting from the vapor etching process can be useful as molds for electroplating nanometer-sized filaments, etching gate cavities for deposition of nano-cones, developing high-aspect ratio holes in trackable resists, and as filters for a variety of molecular-sized particles in virtually any liquid or gas by selecting the dielectric material that is compatible with the liquid or gas of interest.

  3. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  4. Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

    Liu, Lin; Peng, Kui-Qing; Hu, Ya; Wu, Xiao-Ling; Lee, Shuit-Tong

    2014-03-01

    Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate. PMID:24323873

  5. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  6. Effect of thermocycling on the durability of etch-and-rinse and self-etch adhesives on dentin.

    Sangwichit, Ketkamon; Kingkaew, Ruksaphon; Pongprueksa, Pong; Senawongse, Pisol

    2016-01-01

    The objective was to compare bond strengths of adhesives with/without thermocycling and to analyze the micromorphology of resindentin interfaces. Flat dentin surfaces were prepared and divided into eight groups to bond with four etch-and-rinse adhesives (Optibond FL, Adper Scotchbond Multi-Purpose, Optibond Solo Plus, and Single Bond 2) and four self-etch adhesives (Clearfil SE Bond, Adper SE Plus, Clearfil S(3) Bond and Adper Easy Bond). Specimens were further divided into two subgroups subjected for with/without thermocycling and then subjected to both micro-tensile test and resin-dentin interface evaluation. The results revealed that there were significant differences in bond strength between the groups with and without thermocycling for all etch-and-rinse groups and for the Adper Easy Bond self-etch group (padhesives and Adper SE Plus and Adper Easy Bond after thermocycling. PMID:27251990

  7. Influences of temperature and etching voltage on the surface morphology of photo-electro-chemical etching for silicon microchannel arrays

    Zhang, Yao; Duanmu, Qingduo; Yu, Feng-yuan; Liang, Yong-zhao; Chai, Jin; Wang, Guo-zheng; Yang, Ji-kai

    2013-08-01

    The application fields of high aspect ratio Si microchannel arrays have increased considerably, for example, Si microchannel plates, MEMS devices and so on. By the method of photo-electrochemical etching (PEC), Si microchannel arrays are prepared using n-Si wafer covered by anti-corrosion layers and initiation array pits. The dark current intensity curve of an n-type silicon wafer was presented in aqueous HF. The relationship among temperature, etching voltage and carrier transportation was presented. The influences of temperature and etching voltage on the surface morphology of silicon microchannel arrays were researched. The perfect Si microchannel arrays structure with the pore depth of 297 μm, the pore size of 3 μm and the aspect ratio of 99 was obtained by the method of reducing etching voltage gradually.

  8. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  9. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to etching. PMID:23847751

  10. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  11. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

    Nikulin Valery

    2011-01-01

    Full Text Available Abstract Films of nanocrystalline silicon (nc-Si were prepared from hydrogenated amorphous silicon (a-Si:H by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

  12. Magnetic field sensing based on fiber loop ring-down spectroscopy and etched fiber interacting with magnetic fluid

    Wang, Qi; Liu, Xu; Zhao, Yong; Lv, Riqing; Hu, Haifeng; Li, Jin

    2015-12-01

    A novel magnetic field sensing system based on fiber loop ring-down spectroscopy (FLRDS) and etched fiber interacting with magnetic fluid (MF) is proposed and demonstrated for the first time. The enhanced evanescent field effect in the sensing part was achieved by etching the fiber with hydrofluoric acid. The influence of diameters of etched fiber to the performance of the sensor was investigated and discussed. In the sensing system, the etched fiber surrounded by MF was used as the sensing head and on account of the tunable refractive index and absorption coefficient of MF, the transmission spectrum would change with the magnetic field strength. In this letter, the FLRDS sensing system was theoretically modeled and FLRDS technique was utilized to modulate the transmission spectrum. The sensitivity of magnetic field sensing was enhanced significantly. In the experiment, performances of the magnetic field sensing system were tested by applying different measured magnetic field. The final results indicated that a sensitivity of 12.56 G/μs was achieved.

  13. A randomized control clinical trial of fissure sealant retention: Self etch adhesive versus total etch adhesive

    Nadia Aman

    2015-01-01

    Full Text Available Context: There are limited studies on comparison of Total etch (TE and Self etch (SE adhesive for placement of sealants. Aims: The aim of the study was to compare the retention of fissure sealants placed using TE adhesive to those sealants placed using SE (seventh generation adhesive. Settings and Design: The study was conducted in the dental section, Aga Khan University Hospital. This study was a randomized single blinded trial with a split mouth design. Materials and Methods: The study included 37 patients, 101 teeth were included in both study groups. The intervention arm was treated with SE Adhesive (Adper Easy One, 3M ESPE, US. Control arm received TE adhesive (Adper Single Bond 2, 3M ESPE, US before sealant application. The patients were followed after 6 months for assessment of sealant retention. Statistical analysis used: Interexaminer agreement for outcome assessment was assessed by Kappa Statistics and outcome in intervention group was assessed by McNemar′s test. Results: Ninety-one pairs of molar (90% were reevaluated for sealant retention. Complete retention was 56% in TE arm and 28% in SE arm with an odds ratio (OR of 3.7. Conclusions: Sealants applied with TE adhesives show higher rate of complete sealant retention than SE adhesive.

  14. A complete dry etching process for MOS FET's with submicron gate length

    Parrens, P.; Raffat, E.; Jeuch, P.

    1982-01-01

    An anisotropic dry etching process for submicrometer silicon gate N channel MOS technology has been developed. Reactive ion etching was used for Si 3N4, polysilicon and phosphosilicate glass (PSG). Aluminum was plasma etched. The process includes tapered etching of contact holes in PSG and planarization of PSG to improve step coverage of metallization and to facilitate aluminum etching. MOS devices with gate length as small as 0.6 μm have been successfully fabricated with this process.

  15. Inductive couple plasma reactive ion etching characteristics of TiO2 thin films

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO2 thin films in response to the addition of HBr, Cl2 and C2F6 to Ar gas were investigated. As the HBr, Cl2 and C2F6 concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C2F6 and Cl2. Field emission scanning electron microscopy revealed that 25% C2F6 generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C2F6/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiFx) over the film. CxFy compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO2 films under HBr, C2F6, and Cl2 gases was studied. • Etch rate and etch profile of TiO2 films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C2F6/Ar. • Strong etch conditions at 25% C2F6/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues

  16. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Stráský, Josef, E-mail: josef.strasky@gmail.com [Charles University, Department of Physics of Materials (Czech Republic); Havlíková, Jana; Bačáková, Lucie [Institute of Physiology, Academy of Sciences of the Czech Republic (Czech Republic); Harcuba, Petr [Charles University, Department of Physics of Materials (Czech Republic); Mhaede, Mansour [Clausthal University of Technology, Institute of Materials Science and Engineering (Germany); Faculty of Engineering, Zagazig University (Egypt); Janeček, Miloš [Charles University, Department of Physics of Materials (Czech Republic)

    2013-09-15

    Presented work aims at multi-method characterization of combined surface treatment of Ti–6Al–4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  17. Bonding of self-adhesive resin cements to enamel using different surface treatments: bond strength and etching pattern evaluations.

    Lin, Jie; Shinya, Akikazu; Gomi, Harunori; Shinya, Akiyoshi

    2010-08-01

    This study evaluated the shear bond strengths and etching patterns of seven self-adhesive resin cements to human enamel specimens which were subjected to one of the following surface treatments: (1) Polishing with #600 polishing paper; (2) Phosphoric acid; (3) G-Bond one-step adhesive; or (4) Phosphoric acid and G-Bond. After surface treatment, the human incisor specimens were bonded to a resin composite using a self-adhesive resin cement [Maxcem (MA), RelyX Unicem (UN), Breeze (BR), BisCem (BI), seT (SE), Clearfil SA Luting (CL)] or a conventional resin cement [ResiCem (RE)]. Representative morphology formed with self-adhesive resin cements showed areas of etched enamel intermingled with areas of featureless enamel. In conclusion, etching efficacy influenced the bonding effectiveness of self-adhesive resin cements to unground enamel, and that a combined use of phosphoric acid and G-Bond for pretreatment of human enamel surfaces improved the bond strength of self-adhesive resin cements. PMID:20668359

  18. Etching and forward transfer of fused silica in solid-phase by femtosecond laser-induced solid etching (LISE)

    We present a femtosecond laser-based technique for etching and forward transfer of bulk transparent materials in solid-phase. Femtosecond laser pulses with λ=800 nm were focused through a fused silica block onto an absorbing thin film of Cr. A constraining Si wafer was pressed into tight contact with the Cr film to prevent lift-off of the film. A combination of the high temperature and pressure of the Cr, and compressive stress from the Si, resulted in etching of smooth features from the fused silica by cracking. Unlike in conventional ablative or chemical etching, the silica was removed from the bulk as single solid-phase pieces which could be collected on the Si. Using this so-called laser-induced solid etching (LISE) technique, 1-2 μm deep pits and channels have been produced in the silica surface, and corresponding dots and lines deposited on the Si. The threshold fluence for etching was found to be ∼0.4J/cm2 with ∼130 fs duration pulses. The morphology of the etched features are investigated as functions of fluence and exposure to multiple pulses.

  19. Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

    Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

    2012-01-01

    The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered mac...

  20. Surfactant-enhanced control of track-etch pore morphology

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  1. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  2. New Conductive Copolymer Membranes via Track-Etched PC Templates for Biological Media Ultra-Filtration

    Polypyrrole (PPy) membranes proved to be an important device in the fields of ultrafiltration and synthetic membranes. Recently, in our laboratory, we have synthesized new pyrrole and pyrrole-3-carboxylic acid copolymer membranes via track-etched membranes. Commercial polycarbonate (PC) microfiltration membranes are used as template for the membrane synthesis. Moreover, parent membranes present the same structure with parallel and perpendicular micropores. To introduce new properties for pyrrole copolymer membranes, we have chosen to create track-etched polycarbonate films with particular pore orientations. These novel structures were obtained by irradiating at various angles (+30 degree, -30 degree and 0 degree) through both X and Y planes. Resulting new copolymer membranes can be an important device in the fields of complex biological media ultra-filtration. The presence of easily reactive functions can enable the membrane functionalization by immobilising different biological molecules of interest as sugar moieties, peptides, and enzymes for example. Moreover, introduction of pyrrole-3-carboxylic acid on the copolymer allows having access to amide bond which is very stable in biological media. In this way, these membranes were functionalized with different small biological compounds and grafting access was visualized. Moreover, physical properties of these novel grafting membranes were studied in order to show if electronic conductivity and mechanical properties were affected by functionalization

  3. Influence of dentin and enamel pretreatment with acidic sulfur compounds on adhesive performance

    Ioannidis, Alexis; Stawarczyk, Bogna; Sener, Beatrice; Attin, Thomas; Schmidlin, Patrick R

    2013-01-01

    OBJECTIVE: This study tested the potential hampering effects of acidic sulfur compounds (ASC) containing hydroxybenzene sulfonic acid, hydroxymethoxybenzene sulfonic acid, and sulfuric acid, prior to self-etch and etch-and-rinse bonding procedures on enamel and dentin. According to the manufacturer, ASC should be applied after cavity preparation and prior to application of a primer in order to reduce the remaining biofilm in the preparation cavity. Despite promoted marketing, data on the inve...

  4. Effect of delayed insertion of composite resin on the bond strength of etch-and-rinse adhesive systems

    Edson Alves CAMPOS

    2009-12-01

    Full Text Available Introduction: Etch-and-rinse adhesive systems are characterized bythe dental acid etching previously to the monomer application. Thesematerials can be classified as 3-step (when primer and bond are applied separately or 2-step (when the primer and bond functions are carried out by a single component. Objective: To determine the influence of immediate or delayed insertion of restorative material on the values of bond strength of 2-step and 3-step etch-and-rinse adhesive systems using the microtensile test. Material and methods: Bovine incisors were used, which had its vestibular surface abraded to obtain a flat dentin surface. 3-step (Scotchbond Multi-Purpose – SMP; Optibond FL – OFL; Bond-It – BIT and 2-step (Single-Bond – SB; Optibond Solo Plus – OSP; Bond-1 – B1 etch-and-rinse adhesive systems were used, and composite resin (Z-350 was adhered to this substrate at two different times: immediately and later (after 24 hours. Procedures were performed with simulated physiological pulpal pressure. Results were submitted to statistical analysis through Anova and Tukey’s test (p < 0.05. Results: When the composite resin was immediately inserted all the adhesive systems showed similar results. 3-step adhesive systems did not show reduction in bond strength values related to delayed insertion of composite. On the other hand, 2-step adhesive systems showed significant reduction in the values of bond strength. Reduction was around 30.24% to SB, 27.19% to OSP and 28.21% to B1. Conclusion: 2-step etch-and-rinse adhesive systems should be used very carefully. It is advisable to insert and polymerize the composite resin immediately after the conclusion of adhesive procedure.

  5. Volume of Fluids Methods Applied to Etching and Deposition

    Helmsen, John J.

    1996-10-01

    The volume of fluids (VOF) method is applied to simulating etching and deposition processes employed in semiconductor wafer manufacturing. Some of these processes are: plasma etching, ion milling and chemical vapor deposition. The VOF method formulates surface motion as the movement of a front, where one fluid is moving into a regime occupied by another fluid. The fluids are represented as volume fractions in each cell and are expressed on a Euclidean grid. The interface that represents the boundary is then determined from the volume fractions contained in and surrounding each cell. Once the interface is determined, techniques from computational fluid dynamics can be used to simulate the advancement of the surface. Anisotropic etching is perfomed using the Hamaguchi method of determining surface characteristics. In this talk, the volume of fluids method is described and applied to advancement models that describe semiconductor manufacturing processes. Effects that are simulated include anisotropic etching and species flux dependent etching and deposition. Techniques for advancement and calculating the fluid interface are shown in two and three dimensions. Integration with surface chemistry solvers such as CHEMKIN is also demonstrated.

  6. Evaluation of the CO2 laser for porcelain laminate etching

    Rypel, T. S.; Zakariasen, Kenneth L.

    1994-09-01

    Research has shown that CO2 laser energy can both fuse and etch enamel, the effect being dependent on the exposure parameters utilized. Such energy can also fuse dental porcelains, but it is not known whether porcelain can be etched by CO2 laser. The objective of this study was to evaluate whether CO2 laser energy can be utilized to etch porcelain laminates, an effect necessary for resin bonding. Porcelain laminate disks 10 mm in diameter were prepared. The disks were each numbered and divided into quadrants with a small carbide high speed bur. Six disks were utilized, each quadrant receiving a single laser exposure for a total of 24 exposures. Each exposure was at either 10 or 15 W for .01, .05, or .10 seconds, with a focal spot of either 0.8 or 0.35 mm. This range of exposures includes those exposures which cause enamel etching. Two exposures were made at each combination of exposure parameters. Each disk was prepared for scanning electron microscopy and viewed at 75X to examine the exposure sites. All 24 exposure sites were examined and no definite etching was observed.

  7. Fabrication of polymer nanowires via maskless O2 plasma etching.

    Du, Ke; Wathuthanthri, Ishan; Liu, Yuyang; Kang, Yong Tae; Choi, Chang-Hwan

    2014-04-25

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems. PMID:24670779

  8. Fabrication of polymer nanowires via maskless O2 plasma etching

    In this paper, we introduce a simple fabrication technique which can pattern high-aspect-ratio polymer nanowire structures of photoresist films by using a maskless one-step oxygen plasma etching process. When carbon-based photoresist materials on silicon substrates are etched by oxygen plasma in a metallic etching chamber, nanoparticles such as antimony, aluminum, fluorine, silicon or their compound materials are self-generated and densely occupy the photoresist polymer surface. Such self-masking effects result in the formation of high-aspect-ratio vertical nanowire arrays of the polymer in the reactive ion etching mode without the necessity of any artificial etch mask. Nanowires fabricated by this technique have a diameter of less than 50 nm and an aspect ratio greater than 20. When such nanowires are fabricated on lithographically pre-patterned photoresist films, hierarchical and hybrid nanostructures of polymer are also conveniently attained. This simple and high-throughput fabrication technique for polymer nanostructures should pave the way to a wide range of applications such as in sensors, energy storage, optical devices and microfluidics systems. (paper)

  9. Singular Sheet Etching of Graphene with Oxygen Plasma

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  10. Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

    GE Jing; YIN Wen-Jing; LONG Yong-Fu; DING Xun-Min; HOU Xiao-Yuan

    2007-01-01

    We present a new method in which both positive and negative pulses are used to etch silicon for fabrication of porous silicon (PS) monolayer. The optical thickness and morphology of PS monolayer fabricated with different negative pulse voltages are investigated by means of reflectance spectra,scanning electron microscopy and photoluminescence spectra. It is found that with this method the PS monolayer is thicker and more uniform. The micropores also appear to be more regular than those made by common positive pulse etching. This phenomenon is attributed to the vertical etching effect of the PS monolayer being strengthened while lateral etching process is restrained. The explanation we propose is that negative pulse can help the hydrogen cations (H+) in the electrolyte move into the micropores of PS monolayer. These H+ ions combine with the Si atoms on the wall of new-formed micropores, leading to formation of Si-H bonds. The formation of Si-H bonds results in a hole depletion layer near the micropore wall surface,which decreases hole density on the surface,preventing the micropore wall from being eroded laterally by F- anions. Therefore during the positive pulse period the etching reaction occurs exclusively only at the bottom of the micropores where lots of holes are provided by the anode.

  11. Microstructure of fibrils separated from polyacrylonitrile fibers by ultrasonic etching

    2010-01-01

    Polyacrylonitrile (PAN) fiber is an important precursor fiber for high performance carbon fiber.The properties of the final carbon fiber depend strongly on the nature of the PAN fibers.The PAN fibrils were separated successfully from fibers by ultrasonic etching and were systematically investigated by field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM).It is found that in certain ultrasonic etching conditions (at 75±2oC for 6 h with a frequency of 40 kHz) the PAN fibers are dissolved in the 95 wt.% aqueous dimethylsulphoxide (DMSO) solution;the fibrils consisting of numerous periodic lamellae with thickness of 30-45 nm and perpendicular to the fiber axis are separated in the 90 wt.% aqueous DMSO solution;and the fibrils with smooth surface exfoliated from the PAN fibers are obtained in the 70-90 wt.% aqueous DMSO solutions.Inner periodical structure of fibrils was observed in HRTEM,which indicates that there are different densities and two phases in fibrils.The PAN fibers are dissolved layer by layer with increasing ultrasonic etching time.The fiber surface experiences ultrasonic cleaning,selective etching,excessive etching and dissolution,and then the sublayer experiences the same process.There are numerous periodic lamellae in fibrils of nascent fibers.This means that the fibrils with lamellae are formed by orientation and crystallization in shearing field of spinning pipe and drawing stress field of coagulation bath.

  12. Effects of stirring on the bulk etch rate of CR-39 detector

    It is well established that the bulk etch rates for solid state nuclear track detectors are affected by the concentration and the temperature of the etchant. Recently, we found that the bulk etch rate for the LR 115 detector to be affected by stirring during etching. In the present work, the effects of stirring on the bulk etch rate of the CR-39 detector is investigated. One set of sample was etched under continuous stirring by a magnetic stirrer at 70 deg. C in a 6.25 N NaOH solution, while the other set of samples was etched without the magnetic stirrer. After etching, the bulk etch thickness was measured using Form Talysurf PGI (Taylor Hobson, Leicester, England). It was found that magnetic stirring did not affect the bulk etch of the CR-39 detector, which was in contrast to the results for the LR 115 detector

  13. Dry-wet digital etching of Ge1-xSnx

    Shang, Colleen K.; Wang, Vivian; Chen, Robert; Gupta, Suyog; Huang, Yi-Chiau; Pao, James J.; Huo, Yijie; Sanchez, Errol; Kim, Yihwan; Kamins, Theodore I.; Harris, James S.

    2016-02-01

    The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in photonics and microelectromechanical systems. We demonstrate a digital etching scheme for Ge0.922Sn0.078 based on a two-stage, highly selective CF4 plasma dry etch and HCl wet etch. Using X-Ray Reflectivity, we show consistent etch control as low as 1.5 nm per cycle, which is defined as one dry etch step followed by one wet etch step. The etch rate increases to 3.2 nm per cycle for a longer dry etch time due to physical sputtering contributions, accompanied by an increase in RMS surface roughness. By operating within a regime with minimal sputtering, we demonstrate that good digital etch depth control and surface quality can be achieved using this technique.

  14. ECE laboratory in the Vinca Institute - its basic characteristics and fundamentals of electrochemical etching on polycarbonate

    This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up, i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings. (author)

  15. New conductive copolymer membranes via track-etched PC templates for biological media ultra-filtration

    New microstructurated copolymer membranes have been synthesized using a track-etched polycarbonate (PC) matrix. These membranes proved to be an important device in the field of ultra-filtration and synthetic membranes. These novel structures were obtained by irradiating at various angles (+30o, -30o). Such architecture is expected to improve not only the exchange properties but also, the behaviour under high flow pressure during their use as nanofiltration membranes. Membrane functionalization was performed with an amino acid as a simple biological model. Transmission and ATR-FTIR spectroscopies show that the doping state of copolymer dramatically influences the amino acid coupling rate. UV-vis spectroscopy indicates that the copolymer may be self-doped

  16. Biological functionalization and patterning of porous silicon prepared by Pt-assisted chemical etching

    Porous silicon fabricated via Pt-assisted chemical etching of p-type Si (1 0 0) in 1:1:1 EtOH/HF/H2O2 solution possesses a longer durability in air and in aqueous media than anodized one, which is advantageous for biomedical applications. Its surface SiHx (x = 1 and 2) species can react with 10-undecylenic acid completely under microwave irradiation, and subsequent derivatizations of the end carboxylic acid result in affinity capture of proteins. We applied two approaches to produce protein microarrays: photolithography and spotting. The former provides a homogeneous microarray with a very low fluorescence background, while the latter presents an inhomogeneous microarray with a high noise background.

  17. The oxidation of PET track-etched membranes by hydrogen peroxide as an effective method to increase efficiency of UV-induced graft polymerization

    Il'ya Korolkov; Abzal Taltenov; Anastassiya Mashentseva; Olgun Guven

    2015-01-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first im...

  18. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  19. Effect of Saliva Contamination on Shear Bond Strength of Orthodontic Brackets When Using a Self-Etch Primer

    MAO Jing; QI Juan

    2005-01-01

    The effect of saliva contamination on the shear bond strength of orthodontic brackets, at various stages of the bonding procedure using a new self-etch primer was studied. The samples were divided into 4 groups according to 4 different enamel surface conditions: Group A: dry; Group B: saliva contamination before priming; Group C: saliva contamination after priming, and Group D: saliva contamination before and after priming. Stainless steel brackets were bonded in each test group with a light-cured composite resin (TransbondXT 3M). The shear bond strength was determined in the first 30 min after bonding. The analysis of variance indicated that the shear bond strengths of the 4 groups were significantly different (F= 11.89, P<0.05). Tukey HSD tests indicated that contamination both before and after the application of the acid-etch primer resulted in a significantly lower (=4.6± 1.7 MPa) shear bond strength than either the control group (= 8.8±1.9 MPa) or the groups where contamination occurred either before ( = 7.9± 2.0 MPa) or after (=6.9±1.5 MPa) the application of the primer. It was concluded that the new acid-etch primer could maintain adequate shear bond strength if contamination occurred either before or after the application of the primer. On the other hand, contamination both before and after the application of the primer could significantly reduce the shear bond strength of orthodontic brackets.

  20. Simple and robust near-infrared spectroscopic monitoring of indium-tin-oxide (ITO) etching solution using Teflon tubing

    Nah, Sanghee [Department of Chemistry, College of Natural Sciences, Hanyang University, Haengdang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Ryu, Kyungtag [Department of Chemistry, College of Natural Sciences, Hanyang University, Haengdang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Cho, Soohwa [Department of Chemistry, College of Natural Sciences, Hanyang University, Haengdang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of); Chung, Hoeil [Department of Chemistry, College of Natural Sciences, Hanyang University, Haengdang-Dong, Seongdong-Gu, Seoul 133-791 (Korea, Republic of)]. E-mail: hoeil@hanyang.ac.kr; Namkung, Hankyu [ABB Korea, Samsung-Dong, Seoul 135-090 (Korea, Republic of)

    2006-01-18

    The ability to monitor etching solutions using a spectroscopy directly through existing Teflon lines in electronic industries is highly beneficial and offers many advantages. A monitoring method was developed using near-infrared (NIR) measurements with Teflon tubing as a sample container for the quantification of components in the indium-tin-oxide (ITO) etching solution composed of hydrochloric acid (HCl), acetic acid (CH{sub 3}COOH) and water. Measurements were reproducible and it was possible to use the same calibration model for different Teflon tubings. Even though partial least squares (PLS) calibration performance was slightly degraded for Teflon cells when compared to quartz cells of the similar pathlength, the calibration data correlated well with reference data. The robustness of Teflon-based NIR measurement was evaluated by predicting the spectra of 10 independent samples that were collected using five different Teflon tubes. Although, two Teflon tubes were visually less transparent than the other three, there was no significant variation in the standard error of predictions (SEPs) among the five Teflon tubes. Calibration accuracy was successfully maintained and highly repeatable prediction results were achieved. This study verifies that a Teflon-based NIR measurement is reliable for the monitoring of etching solutions and it can be successfully integrated into on-line process monitoring.

  1. Effect of SF6 flow rate on the etched surface profile and bottom grass formation in deep reactive ion etching process

    While deep reactive ion etching (DRIE) has proven to be a boon for silicon micromachining applications, certain factors still exist which affect the satisfactory performance of DRIE. Some of the process limitations include bottom grass formation, RIE lag, loading and notching effects and aspect ratio dependent etching. This paper presents the effect of SF6 flow rate and etching/passivation cycle time on the etched shape profile and bottom grass formation. Rectangular trenches of varying widths are etched using Alcatel etching system. Critical DRIE process parameters, such as SF6 flow rate and ratio of etching and passivation cycle time, are varied to explore the dependence of etched shape profile on these parameters. It is found that low SF6 flow rate, i.e. 250 sccm, results in relatively smooth bottom surface. As SF6 flow rate is increased, bottom surface roughness increases and grass forms on the bottom of etched trenches. Shape of etched surface profile was found to be changed from positive profile to negative profile, when the SF6 flow rate was increased. Ratio of etching/passivation cycle was also found to be critical for prevention of bottom grass formation. DRIE process parameters were optimised to get smooth and vertical sidewalls

  2. Method and apparatus for spatially uniform electropolishing and electrolytic etching

    Mayer, S.T.; Contolini, R.J.; Bernhardt, A.F.

    1992-03-17

    In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier and the cathode is outside the barrier. A virtual cathode hole formed in the bottom of the barrier below the level of the cathode permits current flow while preventing bubble transport. The anode is rotatable and oriented horizontally facing down. An extended anode is formed by mounting the workpiece in a holder which extends the electropolishing or etching area beyond the edge of the workpiece to reduce edge effects at the workpiece. A reference electrode controls cell voltage. Endpoint detection and current shut-off stop polishing. Spatially uniform polishing or etching can be rapidly performed. 6 figs.

  3. Luminescent porous silicon prepared by reactive ion etching

    Realization of luminescent porous silicon structures by a sequential reactive ion etching is reported. The process is composed of one etching and two passivation subsequences. The impact of substrate resistivity, plasma power and the duration of the etching subsequence on the porosity and thickness of the fabricated porous silicon layer are investigated, as are the roles of two passivation subsequences. The porous silicon layer shows stable photoluminescence in the blue portion of the spectrum. Luminescence stability is due to the stable passivating oxyfluoride layer formed in the two passivation subsequences. Formation of the stable passivating layer is due to the controlled oxidation of the porous silicon surface and the passivation of the dangling bonds in the fluorination subsequence. Since the fabrication process is performed at room temperature, it can be used as a post-fabrication treatment to integrate light-emitting structures with microelectronic circuits. (paper)

  4. Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

    We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF6 plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100), and Nb(100), as well as a doped topological insulator Bi2Se3 at temperatures ranging from 30 mK to 9 K.

  5. Change in surface morphology of polytetrafluoroethylene by reactive ion etching

    Takahashi, Tomohiro; Hirano, Yuki; Takasawa, Yuya; Gowa, Tomoko; Fukutake, Naoyuki; Oshima, Akihiro; Tagawa, Seiichi; Washio, Masakazu

    2011-02-01

    Polytetrafluoroethylene (PTFE) was exposed to Ar, CF 4, N 2 and O 2 plasmas using a reactive ion etching facility. After the exposure, the change in the surface morphology of PTFE was examined and characterization studies were performed for the etching rate, surface roughness, radical yields, chemical structures, water repellency and so on. The etching rates of Ar, CF 4, N 2 and O 2 plasmas were 0.58, 7.2, 4.4 and 17 μm/h, respectively. It was observed that needle-like nano-fiber structures on the surface were irregularly fabricated by the CF 4 plasma. In addition, when the water repellency of exposed samples was evaluated by contact angle, they showed super-hydrophobic properties: contact angle over 150°.

  6. Etched track radiometers in radon measurements: a review

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  7. Etching effects in ion implanted SiO2

    Chemical and physical transformations involved in ion implantation processes in glasses determine changes in mechanical and tribological properties, in network dilatation, in induced optical absorption and luminescence and in the composition and chemical behaviour as a function of different experimental conditions (ion, energy, dose, target temperature). Variations of chemical etch rate in HF are related to radiation damage and formation of compounds. A systematic study of etch rate changes in silica due to Ar, N, Si plus N implants has been performed. Structure modifications at depths greater than the corresponding implanted ion ranges are evidenced for nuclear deposited energy values greater than 1022 keV cm-3. Formation of silicon oxynitrides reduces the etch rate values. (author). 8 refs., 3 figs., 1 tab

  8. High density plasma via hole etching in SiC

    Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

  9. Functionalized Nanoporous Track-Etched b-PVDF Membrane Electrodes for Heavy Metal Determination by Square-Wave Anodic Stripping Voltammetry

    Bessbousse H.

    2013-04-01

    Full Text Available Track-etched functionalized nanoporous β-PVDF membrane electrodes, or functionalized membrane electrodes (FMEs, are electrodes made from track-etched, poly(acrylic acid (PAA functionalized nanoporous β-poly(vinylidene fluoride (β-PVDF membranes with thin porous Au films sputtered on each side as electrodes. To form the β-PVDF nanoporous membranes, β-PVDF films are irradiated by swift heavy ions. After irradiation, radical tracks are stable in the membranes. Chemical etching removes some of the radical tracks revealing nanopores. Radicals, remaining in the pores, initiate radio grafting of PAA from the pore walls of the nanoporous β-PVDF. PAA is a cation exchange polymer that adsorbs metal ions, such as Pb2+, from aqueous solutions thus concentrating the ions into the membrane. After a calibrated time the FME is transferred to an electrochemical cell for square-wave anodic stripping voltammetry analysis.

  10. Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

    Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

    2012-07-01

    The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.

  11. Synchrotron radiation-excited etching of ZnTe using Ar gas

    Tanaka, Tooru [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan)]. E-mail: ttanaka@cc.saga-u.ac.jp; Kume, Yusuke [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Hayashida, Kazuki [Venture Business Laboratory, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Saito, Katsuhiko [Venture Business Laboratory, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Nishio, Mitsuhiro [Department of Electrical and Electronic Engineering, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Guo, Qixin [Department of Electrical and Electronic Engineering, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Ogawa, Hiroshi [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan)

    2005-08-15

    Dependence of the synchrotron light-excited etching of ZnTe on the pressure has been investigated. Ar gas was used as an etching gas, and the ZnTe sample was negatively biased against the reaction chamber. The etching rate increases with increasing the pressure, and the maximum etching rate of 16.7 nm/A min has been achieved. In order to discuss the etching mechanism, the wavelength dependence of the etching properties was examined using a LiF window.

  12. Influence of the anodic etching current density on the morphology of the porous SiC layer

    Anh Tuan Cao

    2014-03-01

    Full Text Available In this report, we fabricated a porous layer in amorphous SiC thin films by using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the porous amorphous SiC layer changed as the anodic current density changed: At low current density, the porous layer had a low pore density and consisted of small pores that branched downward. At moderate current density, the pore size and depth increased, and the pores grew perpendicular to the surface, creating a columnar pore structure. At high current density, the porous structure remained perpendicular, the pore size increased, and the pore depth decreased. We explained the changes in pore size and depth at high current density by the growth of a silicon oxide layer during etching at the tips of the pores.

  13. Study of reactive ion etching for reverse tone nanoimprint process

    Tsuji, Y; Yanagisawa, M; Yoshinaga, H; Hiratsuka, K, E-mail: tsuji-yukihiro@sei.co.j [Fiber-optics Core Devices R and D Department, Transmission Devices R and D Laboratories, Sumitomo Electric Industries, LTD. 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 (Japan)

    2009-11-15

    We have used reverse nanoimprint for fabricating diffraction gratings of distributed feedback laser diodes. Generation of residues in the etching process of resin is a serious issue leading to poor line edge roughness of the grating patterns. We have found that the residues are composed of oxide products from Si-containing resin. We have successfully suppressed the generation of the residues by optimizing oxygen partial pressure of reactive ion etching (RIE). We have also succeeded in effectively removing the residues by utilizing sputtering effect of RIE.

  14. Distinct Photopolymerization Efficacy on Dentin of Self-etch Adhesives

    Zhang, Y.; Wang, Y.

    2012-01-01

    The effect of application mode on polymerization effectiveness of self-etch adhesives with different pHs has rarely been studied. We applied 2 self-etch adhesives—Adper Prompt L-Pop (APLP, pH ~ 0.8) and Adper Easy-Bond (AEB, pH ~ 2.5)—to dentin with or without agitation (dynamic or static application), to investigate photopolymerization efficacy on dentin, and to understand the role of chemical interaction/reaction between adhesives and dentin. Micro-Raman spectra and imaging were acquired ac...

  15. Surface photovoltage studies of Si nanocrystallites prepared by electrochemical etching

    Patel, B. K.; Rath, S.; Sahu, S. N.

    2006-06-01

    Nanocrystalline Si has been prepared by anodic etching of Si in an electrolyte consisting of ethanol and HF. The structure and surface morphology have been studied using transmission electron microscopy which reveal the cubic structure and porous morphology of Si nanocrystals (NCs). Electrochemical etching has resulted in surface oxidation of Si NCs as confirmed from X-ray photoelectron spectroscopic measurements. The average size of the Si NCs has been estimated from the line broadening analysis of the Raman scattering. Unique optical transitions associated with porous Si/SiO2 quantum well (QW) like structure has been investigated by surface photovoltage (SPV) measurements.

  16. Synthesis and chemical etching of Te/C nanocables

    Guang Sheng Cao; Yong Gang Liu; Wen Wu Yang; Chang Tan; Hui Li; Xiao Juan Zhang

    2011-10-01

    In this paper, Te/C nanocables were fabricated by a hydrothermal method in the presence of cetyltrimethylammonium bromide (CTAB). The products were characterized in detail by multiform techniques: transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray analysis and Fourier transform infrared (FTIR) spectroscopy. The results showed that the products were nanocables with lengths of several microns, core about 20 nm in diameter, and a surrounding sheath of about 60–80 nm in thickness. Te/C nanocables were tailored freely by chemical etching. Carbonaceous nanotubes and Te/C nanocables with fragmentary Te core were obtained by adjusting time of chemical etching.

  17. Ultrastructure of a hyaluronic acid matrix

    Hadler, Nortin M.; Dourmashkin, Robert R; Nermut, Milan V.; Williams, Lynn D.

    1982-01-01

    Freeze-etch replicas of a hylauronic acid matrix were visualized by electron microscopy. In water a coarse branching fibrillar network of hyaluronic acid aggregates was seen. The high solvent permeability of this matrix suggests that the spaces observed are relatively devoid of unaggregated polymer. Addition of calcium disordered the matrix, resulting in a more dispersed felt of polymer.

  18. Enhancement on photocatalytic activity of an amorphous titanium oxide film with nano-textured surface by selective-fluorination etching process

    Highlights: • The amorphous TiOx film surface was modified via selective fluorination etching process. • The resulting nano-textured surface markedly enriched the specific surface area and surface acidity. • The photocatalytic activity was comparable to an annealed TiOx film with anatase structure. - Abstract: A selective-fluorination etching process achieved by an UV light pre-irradiation and the subsequently fluorination etching was developed to enhance the photocatalytic activity of a low-temperature deposited amorphous titanium oxide (a-TiOx) film. Textured surface on the a-TiOx films formed by this process were investigated using atomic force microscope and field emission scanning electron microscope. Evidence of the fluorine ions introduced into the a-TiOx films was examined using Fourier transform infrared spectrometry and X-ray photoelectron spectroscopy. The etching thickness of the a-TiOx film was found to be deeply relevant to the film pre-irradiated by the UV light. An a-TiOx film with nano-textured surface, which was favorable to enlarge the specific surface area, thus was obtainable from the notable etching selectivity of the film pre-irradiated by UV light through a nano-sized mask. In addition, the surface acidity of the a-TiOx film was enhanced by the formation of the Ti-F chemical bonds originating from the fluorination etching process, which also was functional to facilitate the production of surface OH free radicals. Accordingly, the resulting fluorinated a-TiOx film with nano-textured surface performed a quality photocatalytic activity comparable to that of the high-temperature achieved TiOx film with anatase structures

  19. The study of FTO surface texturing fabrication using Argon plasma etching technique for DSSC applications

    Jayanti, Lindha; Kusumandari; Sujitno, Tjipto; Suryana, Risa

    2016-02-01

    This paper is aimed to investigate the fabrication of the fluorine-doped tin oxide (FTO) texturing by using Argon (Ar) plasma etching. The pressure and temperature of Ar gas during plasma etching were 1.6 mbar and 240-285oC, respectively. The plasma etching time was varied from 3 and 10 min. We also prepared without etching samples as reference. UV-Vis spectrophotometer showed that the transmittances of etching samples are higher than the without etching samples. The root mean square roughness (Rq) of etching samples are lower than the without etching samples. It is considered that the Ar ions bombardment can modify the FTO surfaces. However, the etching time does not significantly affect the FTO surfaces for 3 min and 10 min. The Rq of the without etching sample, the etching sample for 3 min, and the etching sample for 10 min are 11.697 nm, 9.859 nm, and 9.777 nm, respectively. These results are good agreement with the four point probe measurement that indicated that the sheet resistance (RS) for each the without sample, the etching sample for 3 min, and the etching sample for 10 min are 16.817 Ωsq, 16.067 Ω/sq, and 15.990 Ω/sq. In addition, the optical transmittance of the etching sample for 3 min and the etching sample for 10 min at wavelengths of 350 - 850 nm are almost similar. This is evidence that the etching time below 10 min cannot significantly change the morphology, optical and electrical properties.

  20. Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

    Takashi Yatsui

    2015-01-01

    Full Text Available We compared dressed-photon-phonon (DPP etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW He-Cd laser (λ= 325 nm, 3.81 eV for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

  1. Shear Bond Strength of Saliva Contaminated and Re-etched All-in-One Adhesive to Enamel

    M. Khoroushi

    2008-12-01

    Full Text Available Objective: The aim of this study was to investigate the effect of phosphoric acid re-etching of an enamel surface treated via a one-bottle adhesive system on shear bond strength between resin composite and the enamelsurface in different stages of adhesive application.Materials and Methods: Extracted intact premolars (n=84 were divided into sevengroups (n=12. In the control group 1, the adhesive i-Bond was used according to the manufacturer's instructions, with nocontamination. In groups 2 to 4, the conditioned and saliva, contaminated enamel was blot dried only, rinsed,and blot dried, rinsed blot dried and re-etched, respectively. In groups 5, 6and 7 cured adhesive was contaminated with saliva and then rinsed and blot-dried, blot dried only and rinsed, blot-dried and re-etched respectively. In groups 3, 4, 6 and 7 the adhesive was reapplied. Afterward, Z100 compos-ite cylinders were bonded to the enamel surfaces. The samples were thermocycled (5°C and 55°C, 30 s, dwelling time: 10 s, 500 cycles. Finally, the samples were sheared using Dartec testing machine and shear bond strength data were subjected to one-way ANOVA analysis and Tukey's HSD test.Results: There were statistically significant differences among groups 1 and 5-7. The samples in groups 1 and 4 demonstrated higher bond strengths than those in the other groups.Conclusion: Using phosphoric acid etching may be effective, only where contamination occurs prior to curing of the adhesive. After curing of the adhesive, none of the methods in this study would be preferred.

  2. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    Bhardwaj, R. K.; Angra, S. K.; Bajpai, R. P.; Lal, Madan; Bharadwaj, Lalit M.

    2005-09-01

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established.

  3. Correlation between the cytotoxicity of self-etching resin cements and the degree of conversion

    Luís FSA Morgan

    2015-01-01

    Conclusion: These results indicate that photopolymerization of dual cure self-etching resin cements decrease toxic effects on cell culture. Adequate photopolymerization should be considered during cementation when using dual polymerization self-etching resin cements.

  4. Electron Cyclotron Resonance Based Chemically Assisted Plasma Etching Of Silicon in CF4/Ar Plasma

    Etching of silicon in Chemical Assisted Plasma Etching mode with CF4 gas being sprayed on the surface of wafer in process chamber and Ar fed to ECR cavity in Electron Cyclotron Resonance (ECR) source was carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/Ar ratio and substrate bias on etching rate of silicon and anisotropy of etched profile has been investigated. The variation of etch rate and anisotropy has been correlated to the availability of fluorine atoms and other radicals available for etching. Optimum parameters required for etching of silicon in chemical assisted plasma etching with self-assembled ECR plasma source has been established

  5. Polymer degradation in reactive ion etching and its possible application to all dry processes

    Dry etching processes involving CF4-plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF3+ ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF3+ ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF4-plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

  6. Deep and vertical silicon bulk micromachining using metal assisted chemical etching

    In this paper, a newfound and simple silicon bulk micromachining process based on metal-assisted chemical etching (MaCE) is proposed which opens a whole new field of research in MEMS technology. This method is anisotropic and by controlling the etching parameters, deep vertical etching, relative to substrate surface, can be achieved in micrometer size for 〈1 0 0〉 oriented Si wafer. By utilizing gold as a catalyst and a photoresist layer as the single mask layer for etching, 60 µm deep gyroscope micromachined structures have been fabricated for 2 µm features. The results indicate that MaCE could be the only wet etching method comparable to conventional dry etching recipes in terms of achievable etch rate, aspect ratio, verticality and side wall roughness. It also does not need a vacuum chamber and the other costly instruments associated with dry etching techniques. (paper)

  7. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters

  8. Surface changes of biopolymers PHB and PLLA induced by Ar+ plasma treatment and wet etching

    Slepičková Kasálková, N.; Slepička, P.; Sajdl, P.; Švorčík, V.

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar+ plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers - polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  9. Long-term bond strength of adhesive systems applied to etched and deproteinized dentin

    Ninoshka Uceda-Gómez

    2007-12-01

    Full Text Available The aim of this study was to evaluate the early and 12-month bond strength of two adhesive systems (Single Bond-SB and One Step-OS applied to demineralized dentin (WH and demineralized/NaOCl-treated dentin (H. Twenty flat dentin surfaces were exposed, etched, rinsed and slightly dried. For the H groups, a solution of 10% NaOCl was applied for 60 s, rinsed (15 s and slightly dried. The adhesives were applied according to the manufacturer's instructions and composite resin crowns were incrementally constructed. After 24 h (water-37ºC, the specimens was sectioned in order to obtain resin-dentin sticks (0.8 mm². The specimens were tested in microtensile (0.5 mm/min immediately (IM or after 12 months of water storage (12M. The data (MPa were subjected to ANOVA and Tukey's test (a=0.05. Only the main factors adhesive and time were significant (p=0.004 and p=0.003, respectively. SB (42.3±9.1 showed higher bond strengths than OS (33.6±11.6. The mean bond strength for IM-group (42.5±8.7 was statistically superior to 12M (33.3±11.8. The use of 10% NaOCl, after acid etching, did not improve the immediate and the long-term resin-dentin bond strength.

  10. Laser desorption/ionization mass spectrometry of lipids using etched silver substrates.

    Schnapp, Andreas; Niehoff, Ann-Christin; Koch, Annika; Dreisewerd, Klaus

    2016-07-15

    Silver-assisted laser desorption/ionization mass spectrometry can be used for the analysis of small molecules. For example, adduct formation with silver cations enables the molecular analysis of long-chain hydrocarbons, which are difficult to ionize via conventional matrix-assisted laser desorption ionization (MALDI). Here we used highly porous silver foils, produced by etching with nitric acid, as sample substrates for LDI mass spectrometry. As model system for the analysis of complex lipid mixtures, cuticular extracts of fruit flies (Drosophila melanogaster) and worker bees (Apis mellifera) were investigated. The mass spectra obtained by spotting extract onto the etched silver substrates demonstrate the sensitive detection of numerous lipid classes such as long-chain saturated and unsaturated hydrocarbons, fatty acyl alcohols, wax esters, and triacylglycerols. MS imaging of cuticular surfaces with a lateral resolution of a few tens of micrometers became possible after blotting, i.e., after transferring lipids by physical contact with the substrate. The examples of pheromone-producing male hindwings of the squinting bush brown butterfly (Bicyclus anynana) and a fingermark are shown. Because the substrates are also easy to produce, they provide a viable alternative to colloidal silver nanoparticles and other so far described silver substrates. PMID:26827933

  11. Funnel-type etched ion tracks in polymers

    Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Munoz, G. H.; Alfonta, L.; Klinkovich, I.

    2010-01-01

    Roč. 165, č. 5 (2010), s. 343-361. ISSN 1042-0150 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505 Keywords : track s * polymers * etching Subject RIV: JJ - Other Materials Impact factor: 0.660, year: 2010

  12. Personnel neutron dosimetry using electrochemically etched CR-39 foils

    A personnel neutron dosimetry system has been developed based on the electrochemical etching of CR-39 plastic at elevated temperatures. The doses obtained using this dosimeter system are more accurate than those obtained using other dosimetry systems, especially when varied neutron spectra are encountered. This Cr-39 dosimetry system does not have the severe energy dependence that exists with albedo neutron dosimeters or the fading and reading problems encountered with NTA film. The dosimetry system employs an electrochemical etch procedure that be used to process large numbers of Cr-39 dosimeters. The etch procedure is suitable for operations where the number of personnel requires that many CR-39 dosimeters be processed. Experience shows that one full-time technician can etch and evaluate 2000 foils per month. The energy response to neutrons is fairly flat from about 80 keV to 3.5 MeV, but drops by about a factor of three in the 13 to 16 MeV range. The sensitivity of the dosimetry system is about 7 tracks/cm2/mrem, with a background equivalent to about 8 mrem for new CR-39 foils. The limit of sensitivity is approximately 10 mrem. The dosimeter has a significant variation in directional dependence, dropping to about 20% at 900. This dosimeter has been used for personnel neutron dosimetry at the Lawrence Livermore National Laboratory for more tha 18 months. 6 refs., 23 figs., 2 tabs

  13. Advanced dry etching studies for micro- and nano-systems

    Rasmussen, Kristian Hagsted

    , and PMMA. However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition...

  14. Electrochemical etching of sharp tips for STM reveals singularity

    Quaade, Ulrich; Oddershede, Lene

    2002-01-01

    Electrochemical etching of metal wires is widely used to produce atomically sharp tips for use in scanning tunneling microscopy (STM). In this letter we uncover the existence of a finite-time singularity in the process: Several of the physical parameters describing the system exhibit scaling...

  15. Cryo-Etched Black Silicon for Use as Optical Black

    Yee, Karl Y.; White, Victor E.; Mouroulis, Pantazis; Eastwood, Michael L.

    2011-01-01

    Stray light reflected from the surface of imaging spectrometer components in particular, the spectrometer slit degrade the image quality. A technique has been developed for rapid, uniform, and cost-effective black silicon formation based on inductively coupled plasma (ICP) etching at cryogenic temperatures. Recent measurements show less than 1-percent total reflectance from 350 2,500 nm of doped black silicon formed in this way, making it an excellent option for texturing of component surfaces for reduction of stray light. Oxygen combines with SF6 + Si etch byproducts to form a passivation layer atop the Si when the etch is performed at cryogenic temperatures. Excess flow of oxygen results in micromasking and the formation of black silicon. The process is repeatable and reliable, and provides control over etch depth and sidewall profile. Density of the needles can be controlled to some extent. Regions to be textured can be patterned lithographically. Adhesion is not an issue as the nanotips are part of the underlying substrate. This is in contrast to surface growth/deposition techniques such as carbon nanotubes (CNTs). The black Si surface is compatible with wet processing, including processing with solvents, the textured surface is completely inorganic, and it does not outgas. In radiometry applications, optical absorbers are often constructed using gold black or CNTs. This black silicon technology is an improvement for these types of applications.

  16. Controlled MoS₂ layer etching using CF₄ plasma.

    Jeon, Min Hwan; Ahn, Chisung; Kim, HyeongU; Kim, Kyong Nam; LiN, Tai Zhe; Qin, Hongyi; Kim, Yeongseok; Lee, Sehan; Kim, Taesung; Yeom, Geun Young

    2015-09-01

    A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed. PMID:26267409

  17. On the structure of etched ion tracks in polymers

    Hnatowicz, Vladimír; Vacík, Jiří; Apel, P. Yu.

    2016-01-01

    Roč. 121, APR (2016), s. 106-109. ISSN 0969-806X R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : polymers * ion tracks * track etching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.380, year: 2014

  18. Three-dimensional photonic crystals fabricated by simultaneous multidirectional etching

    Kitano, Keisuke; Suzuki, Katsuyoshi; Ishizaki, Kenji; Noda, Susumu

    2015-04-01

    We discuss three-dimensional (3D) photonic crystals fabricated by simultaneous multidirectional plasma etching. First, we investigate a method for controlling the ion sheath used in reactive ion etching for obtaining multidirectional etching. We then discuss the fabrication tolerance from an analytical perspective. Based on our results, we demonstrate the fabrication of 3D photonic crystals with thicknesses of 1, 1.5, and 2 lattice periods in the surface-normal direction on single-crystalline silicon wafers, which show high reflectance (˜100 %) and low transmittance (-17 dB ) at optical communication wavelengths, suggesting the formation of a complete photonic band gap. We reveal that the shape of the etched holes limits the performance of 3D photonic crystals and suggest possible ways to improve the band-gap effect. Moreover, we show that 3D photonic crystals with short lattice constants show high reflectance (˜80 %) at visible to near-infrared wavelengths. By investigating the influence of absorption on the characteristics of 3D photonic crystals, we reveal that the reflectance remains as high as 94% in the photonic band-gap range even when the absorption of silicon is taken into account. We find that a unique increase of absorption occurs at several discrete wavelengths below the photonic band gap, suggesting the possibility of manipulating light absorption. These results not only simplify the fabrication of 3D photonic crystals, but also provide a basis for realizing 3D photonic nanostructures that include other materials.

  19. Bulk micromachining of Si by metal-assisted chemical etching.

    Kim, Sang-Mi; Khang, Dahl-Young

    2014-09-24

    Bulk micromachining of Si is demonstrated by the well-known metal-assisted chemical etching (MaCE). Si microstructures, having lateral dimension from 5 μm up to millimeters, are successfully sculpted deeply into Si substrate, as deep as >100 μm. The key ingredient of this success is found to be the optimizations of catalyst metal type and its morphology. Combining the respective advantages of Ag and Au in the MaCE as a Ag/Au bilayer configuration leads to quite stable etch reaction upon a prolonged etch duration up to >5 h. Further, the permeable nature of the optimized Ag/Au bilayer metal catalyst enables the etching of pattern features having very large lateral dimension. Problems such as the generation of micro/nanostructures and chemical attacks on the top of pattern surface are successfully overcome by process optimizations such as post-partum sonication treatment and etchant formulation control. The method can also be successful to vertical micromachining of Si substrate having other crystal orientations than Si(100), such as Si(110) and Si(111). The simple, easy, and low-cost nature of present approach may be a great help in bulk micromachining of Si for various applications such as microelectromechanical system (MEMS), micro total analysis system (μTAS), and so forth. PMID:24820931

  20. Ion beam enhanced etching of LiNbO3

    Single crystals of z- and x-cut LiNbO3 were irradiated at room temperature and 15 K using He+- and Ar+-ions with energies of 40 and 350 keV and ion fluences between 5 x 1012 and 5 x 1016 cm-2. The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He+-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO3 in the case of Ar+-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He+- and Ar+-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 deg. C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min-1. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO3 are discussed

  1. Application of the total etching technique or self-etching primers on primary teeth after air abrasion Aplicação da técnica de condicionamento total ou de "primers" autocondicionantes em dentes decíduos após abrasão a ar

    Fábio Renato Manzolli Leite; Ticiana Sidorenko de Oliveira Capote; Angela Cristina Cilense Zuanon

    2005-01-01

    Since the use of air abrasion has grown in pediatric dentistry, the aim of this study was to evaluate, by means of shear bond strength testing, the need to use the total etching technique or self-etching primers on dentin of primary teeth after air abrasion. Twenty-five exfoliated primary molars had their occlusal dentin exposed by trimming and polishing. Specimens were treated by: Air abrasion + Scotchbond MultiPurpose adhesive (G1); 37% phosphoric acid + Scotchbond MP adhesive (G2); Clearfi...

  2. Preparation of etched tantalum semimicro capacitor stimulation electrodes.

    Robblee, L S; Kelliher, E M; Langmuir, M E; Vartanian, H; McHardy, J

    1983-03-01

    The ideal electrode for stimulation of the nervous system is one that will inject charge by purely capacitive processes. One approach is to exploit the type of metal-oxide combination used in electrolytic capacitors, e.g., Ta/Ta2O5. For this purpose, fine tantalum wire (0.25 mm diam) was etched electrolytically at constant current in a methanol solution of NH4Br containing 1.5 wt % H2O. Electrolytic etching produced a conical tip with a length of ca. 0.5 mm and shaft diameters ranging from 0.10 to 0.16 mm. The etched electrodes were anodized to 10 V (vs. SCE) in 0.1 vol % H3PO4. The capacitance values normalized to geometric area of etched electrodes ranged from 0.13 to 0.33 micro F mm-2. Comparison of these values to the capacitance of "smooth" tantalum anodized to 10 V (0.011 micro F mm-2) indicated that the degree of surface enhancement, or etch ratio, was 12-30. The surface roughness was confirmed by scanning electron microscopy studies which revealed an intricate array of irregularly shaped surface projections about 1-2 micrometers wide. The etched electrodes were capable of delivering 0.06-0.1 micro C of charge with 0.1 ms pulses at a pulse repetition rate of 400 Hz when operated at 50% of the anodization voltage. This quantity of charge corresponded to volumetric charge densities of 20-30 micro C mm-3 and area charge densities of 0.55-0.88 micro C mm-2. Charge storage was proportionately higher at higher fractional values of the formation voltage. Leakage currents at 5 V were ca. 2 nA. Neither long-term passive storage (1500 h) nor extended pulsing time (18 h) had a deleterious effect on electrode performance. The trend in electrical stimulation work is toward smaller electrodes. The procedures developed in this study should be particularly well-suited to the fabrication of even smaller electrodes because of the favorable electrical and geometric characteristics of the etched surface. PMID:6841372

  3. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and

  4. X-ray photoemission investigation of excimer laser induced etching of InP

    ArF excimer laser induced etching of InP in various etch gases (HBr, HCl, Cl2) is discussed with regard to its spatial resolution capability. X-ray photoemission spectra and large-area etch rate measurements published before lead to fundamental understanding and interpretation of the characteristics of etched test structures. HBr and HCl require gas phase photodissociation. Cl2, in contrast, has the advantage to react spontaneously

  5. Ion beam etching system for mercury cadmium telluride and III-V compound semiconductors

    This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows

  6. Antireflective nanostructures fabricated by reactive ion etching method on pyramid-structured silicon surface

    In this paper, pyramid-structured silicon wafers were etched in a reactive ion etching system at room temperature and without any negative voltage pulses to obtain antireflective nanostructures. The effects of the etching time, etching power and the flow ratio of the SF6 and O2 (FSF6/FO2) on the morphologies and reflective properties of the etched samples were studied. Scanning electron microscope was used to investigate the morphologies of etched samples. The surface reflectance measurements were carried out using UV–vis-NIR spectrophotometer. A reflectance of 4.72% from the etched surface in the wavelength range of 400–800 nm was obtained under etching time of 20 min, etching power of 150 W and FSF6/FO2 of 18 sccm/6 sccm. Meanwhile, samples etched with FO2 lower than 6 sccm can’t get low reflective silicon structure. Besides, the results show that overlong etching time of 30 min and too big etching power of 225 W would make the nanostructures too sparse to obtain a low reflectance.

  7. Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

    Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/Ar and HBr/Cl2/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) and Ar emission intensity (7504 Å). Etching rates measured under MgF2, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl2/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.

  8. Antireflective nanostructures fabricated by reactive ion etching method on pyramid-structured silicon surface

    Yue, Zhihao [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016 (China); Shen, Honglie, E-mail: hlshen@nuaa.edu.cn [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016 (China); Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016 (China); Jiang, Ye [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016 (China)

    2013-04-15

    In this paper, pyramid-structured silicon wafers were etched in a reactive ion etching system at room temperature and without any negative voltage pulses to obtain antireflective nanostructures. The effects of the etching time, etching power and the flow ratio of the SF{sub 6} and O{sub 2} (F{sub SF6}/F{sub O2}) on the morphologies and reflective properties of the etched samples were studied. Scanning electron microscope was used to investigate the morphologies of etched samples. The surface reflectance measurements were carried out using UV–vis-NIR spectrophotometer. A reflectance of 4.72% from the etched surface in the wavelength range of 400–800 nm was obtained under etching time of 20 min, etching power of 150 W and F{sub SF6}/F{sub O2} of 18 sccm/6 sccm. Meanwhile, samples etched with F{sub O2} lower than 6 sccm can’t get low reflective silicon structure. Besides, the results show that overlong etching time of 30 min and too big etching power of 225 W would make the nanostructures too sparse to obtain a low reflectance.

  9. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives

    Drobac Milan

    2015-01-01

    Full Text Available Introduction. The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin - dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Material and Methods. Micro morphological characteristics of interface between totaletch adhesive (Prime & Bond NT in combination with the corresponding composite (Ceram X Mono were compared with those of self-etching adhesive (AdheSE One in combination with the corresponding composite (Tetric EvoCeram. The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum. Measurement of the thickness of the hybrid layer of the examined composite systems was performed with the software of the device used (NIH Image Аnalyser. Results. Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 μm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT - Ceram X Mono. However, the specimens with composite systems Adhese One - Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. Conclusion. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesives. [Projekat Ministarstva nauke Republike Srbije, br. 174005

  10. Low-temperature aging of delta-ferrite in 316L SS welds. Changes in mechanical properties and etching properties

    Thermal aging embrittlement of LWR components made of stainless cast (e.g. CF-8 and CF-8M) is a potential degradation issue, and careful attention has been paid on it. Although welds of austenitic stainless steels (SSs) have γ-δ duplex microstructure, which is similar to that of the stainless cast, examination on thermal aging characteristics of the SS welds is very limited. In order to evaluate thermal aging behavior of weld metal of austenitic stainless steel, the 316L SS weld metal has been prepared and changes in mechanical properties and in etching properties at isothermal aging at 335degC have been investigated. The hardness of the ferrite phase has increased with aging, while the hardness of austenite phase has stayed same. It has been suggested that spinodal decomposition has occurred in δ-ferrite by the 335degC aging. The etching rates of δ-ferrite at immersion test in 5wt% hydrochloric acid solution have been also investigated using an AFM technique. The etching rate of ferrite phase has decreased consistently with the increase in hardness of ferrite phase. It has been thought that this characteristic is also caused by spinodal decomposition of ferrite into chromium-rich (α') and iron-rich (α). (author)

  11. Effect of dimethyl sulfoxide on bond durability of fiber posts cemented with etch-and-rinse adhesives

    Shafiei, Fereshteh; Sarafraz, Zahra

    2016-01-01

    PURPOSE This study was undertaken to investigate whether use of an adhesive penetration enhancer, dimethyl sulfoxide (DMSO), improves bond stability of fiber posts to root dentin using two two-step etch-and-rinse resin cements. MATERIALS AND METHODS Forty human maxillary central incisor roots were randomly divided into 4 groups after endodontic treatment and post space preparation, based on the fiber post/cement used with and without DMSO pretreatment. Acid-etched root dentin was treated with 5% DMSO aqueous solution for 60 seconds or with distilled water (control) prior to the application of Excite DSC/Variolink II or One-Step Plus/Duo-link for post cementation. After micro-slicing the bonded root dentin, push-out bond strength (P-OBS) test was performed immediately or after 1-year of water storage in each group. Data were analyzed using three-way ANOVA and Student's t-test (α=.05). RESULTS A significant effect of time, DMSO treatment, and treatment × time interaction were observed (P.05). CONCLUSION DMSO-wet bonding might be a beneficial method in preserving the stability of resin-dentin bond strength over time when fiber post is cemented with the tested etch-and-rinse adhesive cements.

  12. Influence of oxygen inhibition on the surface free-energy and dentin bond strength of self-etch adhesives.

    Koga, Kensaku; Tsujimoto, Akimasa; Ishii, Ryo; Iino, Masayoshi; Kotaku, Mayumi; Takamizawa, Toshiki; Tsubota, Keishi; Miyazaki, Masashi

    2011-10-01

    We compared the surface free-energies and dentin bond strengths of single-step self-etch adhesives with and without an oxygen-inhibited layer. The labial dentin surfaces of bovine mandibular incisors were wet ground with #600-grit silicon carbide paper. The adhesives were applied to the ground dentin, light-irradiated, and the oxygen-inhibited layer was either retained or removed with ethanol. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The dentin bond strengths of specimens with and without the oxygen-inhibited layer were measured. For all surfaces, the value of the estimated surface tension component was relatively constant at 35.5-39.8 mJ m(-2) . The value of the , Lewis acid component increased slightly when the oxygen-inhibited layer was removed, whereas that of the , Lewis base component decreased significantly. The bond strengths of the self-etch adhesives were significantly lower in specimens without an oxygen-inhibited layer (13.2-13.6 MPa) than in those with an oxygen-inhibited layer (17.5-18.4 MPa). These results indicate that the presence of an oxygen-inhibited layer in single-step self-etch adhesives with advanced photoinitiators promotes higher dentin bond strength. PMID:21896057

  13. Surface kinetics modeling of silicon and silicon oxide plasma etching. III. Modeling of silicon oxide etching in fluorocarbon chemistry using translating mixed-layer representation

    Silicon oxide etching was modeled using a translating mixed-layer model, a novel surface kinetic modeling technique, and the model showed good agreement with measured data. Carbon and fluorine were identified as the primary contributors to deposition and etching, respectively. Atomic fluorine flux is a major factor that determines the etching behavior. With a chemistry having a small amount of atomic fluorine (such as the C4F8 chemistry), etching yield shows stronger dependence on the composition change in the gas flux

  14. A comparison of the etching behaviour of the FS Cr-free SOI with that of the Secco etching solution on silicon-on-insulator substrates

    The 'FS Cr-free SOI' etching solution has been presented as a new defect etching solution especially developed for application on silicon-on-insulator (SOI) substrates fabricated by the Smart-CutTM technology. It is free of toxic hexavalent chromium. Very efficient in revealing crystal defects it is a promising candidate for Secco replacement on SOI. The aim of this paper is to present and compare the most important characteristics of both defect etching solutions. The defect delineation mechanism common to both Secco and FS Cr-free SOI and etching mechanisms will also be discussed.

  15. Chemical vapour etching of silicon and porous silicon: silicon solar cells and micromachining applications

    Ben Jaballah, A.; Hassen, M.; Hajji, M.; Saadoun, M.; Bessais, B.; Ezzaouia, H. [Institut National de Recherche Scientifique et Technique, Laboratoire de Photovoltaique et des Materiaux Semiconducteurs, PB 95 2050 Hammam lif (Tunisia)

    2005-06-01

    In this work, we used HNO{sub 3}/HF Vapour Etching (VE) of silicon (Si) wafers for the formation of different porous structures. Depending on the volume ratio of the HNO{sub 3}/HF acid mixture, we can obtain Porous Silicon (PS) layers or a (NH{sub 4}){sub 2}SiF{sub 6} like powder phase. These two kind of porous structures may be used in silicon solar cells and in micromachining applications. The VE technique allows producing thick porous layers (>100 {mu}m) in short times. Simple masking films enable to selectively groove Si wafers, leading to the formation of holes and channels of different sizes suitable for their application in micromachining. The various grooving profiles were investigated by Scanning electron microscopy (SEM). (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Advanced deep reactive-ion etching technology for hollow microneedles for transdermal blood sampling and drug delivery.

    Liu, Yufei; Eng, Pay F; Guy, Owen J; Roberts, Kerry; Ashraf, Huma; Knight, Nick

    2013-06-01

    Using an SPTS Technologies Ltd. Pegasus deep reactive-ion etching (DRIE) system, an advanced two-step etching process has been developed for hollow microneedles in applications of transdermal blood sampling and drug delivery. Because of the different etching requirements of both narrow deep hollow and large open cavity, hollow etch and cavity etch steps have been achieved separately. This novel two-step etching process is assisted with a bi-layer etching mask. Results show that the etch rate of silicon during this hollow etch step was about 7.5 microm/min and the etch rate of silicon during this cavity etch step was about 8-10 microm/min, using the coil plasma etching power between 2.0 and 2.8 kW. Especially for the microneedle bores etch, the deeper it etched, the slower the etch rate was. The microneedle bores have successfully been obtained 75-150 microm in inner diametre and 700-1000 microm long with high aspect ratio DRIE, meanwhile, the vertical sidewall structures have been achieved with the high etch load exposed area over 70% for the cavity etch step. PMID:24046906

  17. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  18. Direct etching process for nanofabrication of crosslinked PTFE using focused ion beam

    We have studied etching of crosslinked Polytetrafluoroethylene (PTFE) using focused ion beam (FIB). After the irradiation, etching width and depth of the process have been evaluated by FE-SEM photographs of the fabricated samples. Width of the etched line on the surface of crosslinked PTFE was about 130 nm. It was indicated that Ga+ ion beam profiles affected etching width of the crosslinked PTFE. Ga+ ion beam profiles and fluence would be important to carry out nanofabrication of the crosslinked PTFE by FIB direct-etching. (author)

  19. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    郑艳彬; 李光; 王文龙; 李秀昌; 姜志刚

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

  20. Development of deep silicon plasma etching for 3D integration technology

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  1. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  2. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF6-based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min-1) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  3. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH3OH/Ar gas mixture. As the CH3OH concentration in CH3OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH3OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO2 and RuO3 compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH3OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO2 and RuO3 can be easily sputtered off

  4. Inductively coupled plasma etching of BZN thin films in SF6/Ar plasmas

    Wang, Gang; Li, Ping; Zhang, Guojun; Li, Wei; Dai, Liping; Jiang, Jing

    2013-03-01

    Etching mechanisms and characteristics of bismuth zinc niobate (BZN) thin films were investigated in inductively coupled SF6/Ar plasmas. The influences of various etching parameters including the gas flow ratio, process pressure, and ICP power on the etching results were analyzed. It is found that the chemical etching with F radicals was more effective than the physical sputtering etching with Ar ions for the inductively coupled plasma etching of BZN thin films. The mechanism of ion assisted chemical etching of BZN thin films in SF6/Ar plasmas was proposed. A maximum etch rate of approximately 43.15 nm/min for the BZN thin film was obtained at the optimum etching conditions: 3/2 for the SF6/Ar gas flow ratio, 10 mTorr for the process pressure, and 600 W for the ICP power. The surface morphology of the etched BZN thin film was observed, where was smooth and clean and no post-etch residues were remained.

  5. Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.

    Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao

    2016-12-01

    Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication. PMID:27119157

  6. Effect of etching agent on dentinal adhesive interface in primary teeth.

    Rontani, R M; Ducatti, C H; Garcia-Godoy, F; De Goes, M F

    2000-01-01

    The purpose of this study was to evaluate in vitro the effect of a phosphoric acid etchant containing benzalkonium chloride on the dentin/adhesive interface in primary teeth. The teeth had caries lesions involving enamel and dentin, and were stored in a 2% glutaraldehyde solution for 2-4 hours. The teeth were divided into five groups of five teeth each: Group 1: Etching for 15 seconds with a semigel 32% phosphoric acid containing benzalkonium chloride; Group 2: Etching with 35% phosphoric acid for 15 seconds; Group 3: Treated with a 2% benzalkonium chloride in a alcoholic solution; Group 4: Conditioned with a 3% benzalkonium chloride in a alcoholic solution (control group); Group 5: The teeth were untreated (control group). The carious tissue was removed with a carbide bur in high-speed and copious air water spray. The overall dimensions and depths of the cavities were determined by the carious tissue removal. After the caries lesion was removed, the cavity was cleaned with an air-water spray and the dentin was treated according to the specific group. The teeth were then restored with Scotchbond Multi-Purpose Plus (3M, St. Paul, MN) and Z-100 resin-based composite (3M, St. Paul, MN) according to the manufacturer's instructions. After the teeth were restored they were stored in water for 24 hours at room temperature and the restorations polished. After storage the teeth were thermally challenged for 500 cycles in temperatures of 50 C and 550 C and then stored in 100% humidity until the sectioning procedures. The teeth were cut into two sections along the longitudinal axis through the center of the teeth and passed the mesial-distal surfaces through the restoration by using a double-face diamond disc with water coolant. The specimens were ground with 320 up to 600 grit silicon carbide paper and polished with 6 mm and 1 mm diamond paste and 0.25 pm alumina solution. The specimens were etched with 10% citric acid for 1 minute and washed with deionized water. After that

  7. Hydrogen plasma etching of silicon dioxide in a hollow cathode system

    Chemical etching of various materials has been observed when hydrogen plasmas are used in material processing. In the case of the deposition of diamond films the preferential etching of sp2 bonded carbon is considered to be of fundamental importance. A few papers have been published which have indicated that etching by hydrogen ions is different to that by hydrogen atoms. In this paper we describe the etching of silicon dioxide by hydrogen which was plasma-activated in a molybdenum-lined RF hollow cathode. The etch rate was seen to be thermally activated but decreased with increasing plasma power. The addition of a few percentage of helium increased the etch rate. The application of a - 50 V bias to the sample holder almost doubled the etch rate indicating the importance of ion bombardment for the chemical reaction. At high plasma powers and substrate temperatures in excess of 450 oC a thin molybdenum deposit was formed on the quartz samples.

  8. Thermal reactive ion etching technique involving use of self-heated cathode

    Yamada, S.; Minami, Y.; Sohgawa, M.; Abe, T., E-mail: memsabe@eng.niigata-u.ac.jp [Graduate School of Science and Technology, Niigata University, Niigata 950-2181 (Japan)

    2015-04-15

    In this work, the thermal reactive ion etching (TRIE) technique for etching hard-to-etch materials is presented. The TRIE technique employs a self-heated cathode and a thermally insulated aluminum plate is placed on the cathode of a regular reactive ion etching (RIE) system. By optimizing the beam size to support the sample stage, the temperature of the stage can be increased to a desired temperature without a cathode heater. The technique was used to etch a bulk titanium plate. An etch rate of 0.6 μm/min and an etch selectivity to nickel of 100 were achieved with SF{sub 6} plasma. The proposed technique makes a regular RIE system a more powerful etcher without the use of chlorine gas, a cathode heater, and an inductively coupled plasma source.

  9. Fabrication of resonator-quantum well infrared photodetector focal plane array by inductively coupled plasma etching

    Sun, Jason; Choi, Kwong-Kit

    2016-02-01

    Inductively coupled plasma (ICP) etching has distinct advantages over reactive ion etching in that the etching rates are considerably higher, the uniformity is much better, and the sidewalls of the etched material are highly anisotropic due to the higher plasma density and lower operating pressure. Therefore, ICP etching is a promising process for pattern transfer required during microelectronic and optoelectronic fabrication. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To fabricate R-QWIP focal plane arrays (FPAs), two optimized ICP etching processes are developed. Using these etching techniques, we have fabricated R-QWIP FPAs of several different formats and pixel sizes with the required dimensions and completely removed the substrates of the FPAs. Their QE spectra were tested to be 30 to 40%. The operability and spectral nonuniformity of the FPA is ˜99.5 and 3%, respectively.

  10. Continuous flow ink etching for direct micropattern of silicon dioxide

    Xing, Jiyao; Rong, Weibin; Wang, Lefeng; Sun, Lining

    2016-07-01

    A continuous flow ink etching (CFIE) method is presented to directly create micropatterns on a 60 nm thick silicon dioxide (SiO2) layer. This technique employs a micropipette filled with potassium bifluoride (KHF2) aqueous solution to localize SiO2 dissolution in the vicinity of the micropipette tip. Both dot and line features with well-defined edges were fabricated and used as hardmasks for silicon etching. The linear density of etchant ink deposited on the SiO2 can be used to regulate the depth, width and 2D morphology of the line pattern. The characterization of CFIE including the resolution (about 4 μm), reproducibility and capability to form complex structures are reported. This technique provides a simple and flexible alternative to generate the SiO2 hardmask for silicon microstructure fabrication.

  11. Preparation of Electrode Array by Electrochemical Etching Based on FEM

    Minghuan WANG; Di ZHU; Lei WANG

    2008-01-01

    Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then machined into cylindrical shape by electrochemical etching.However,the shape of the multiple electrodes and the consistent sizes of the electrodes row are not easy to be controlled.In the electrochemical process,the shape of the cathode electrode determines the current density distribution on the anode and so the forming of multiple electrodes.This paper proposes a finite element method (FEM) to accurately optimize the electrode profile.The microelectrodes row with uniformity diameters with size from hundreds micrometers to several decades could be fabricated,and mathematical model controlling the shape and diameter of multiple microelectrodes was provided.Furthermore,a good agreement between experimental and theoretical results was confirmed.

  12. Numerical Simulation of Bosch Processing for Deep Silicon Plasma Etching

    We present a simulation of the Bosch process using the feature-scale modeling software FPS3D. FPS3D is a generic simulator that can be applied to any set of materials, plasmas, reactive gases, and reactions for both 2D and 3D simulations of etching and deposition. FPS3D can simulate multi-time-step processes for which the fluxes, species, reactions, ion energies, angular distributions, and other parameters can change with each time-step; it is thus well-suited for Bosch process simulations. The polymer deposition and etching time-steps of the Bosch process are modeled and discussed in more detail than was previously attainable

  13. Random and Uniform Reactive Ion Etching Texturing of Si

    Zaidi, S.H.

    1999-04-01

    The performance of a solar cell is critically dependent on absorption of incident photons and their conversion into electrical current. This report describes research efforts that have been directed toward the use of nanoscale surface texturing techniques to enhance light absorption in Si. This effort has been divided into two approaches. The first is to use plasma-etching to produce random texturization on multicrystalline Si cells for terrestrial use, since multicrystalline Si cannot be economically textured in any other way. The second approach is to use interference lithography and plasma-etching to produce gettering structures on Si cells for use in space, so that long-wavelength light can be absorbed close to the junction and make the cells more resistant to cosmic radiation damage.

  14. Microleakage after Thermocycling of Three Self-Etch Adhesives under Resin-Modified Glass-Ionomer Cement Restorations

    Gueders, Audrey M.; Albert, Adelin I.; Laurence Seidel; Geerts, Sabine O.

    2010-01-01

    This study was designed to evaluate microleakage that appeared on Resin-Modified Glass-Ionomer Cement (RMGIC) restorations. Sixty class V cavities (h×w×l=2 mm×2 mm×3 mm) were cut on thirty extracted third molars, which were randomly allocated to three experimental groups. All the buccal cavities were pretreated with polyacrylic acid, whereas the lingual cavities were treated with three one-step Self-Etch adhesives, respectively, Xeno...

  15. Response of electrochemically etched CR-39 detectors to protons

    Dörschel, B; Kadner, K

    1999-01-01

    The neutron response of electrochemically etched (ECE) CR-39 detectors is determined by the energy and angular dependence of the response to neutron-induced charged particles. This response has been measured for the example of protons with various initial energies and angles of incidence. Besides, some studies were made for modeling the mechanism of ECE of the proton trajectories with the aim of deriving the critical angle of incidence.

  16. A deep etching mechanism for trench-bridging silicon nanowires

    Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

    2016-03-01

    Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

  17. Oxidation threshold in silicon etching at cryogenic temperatures

    Tillocher, Thomas; Lefaucheux, Philippe; Mellhaoui, Xavier; Dussart, Remi; Ranson, Pierre; Boufnichel, Mohamed; Overzet, Lawrence

    2006-01-01

    In silicon etching in SF6/O2 plasmas, an oxidation threshold appears when the oxygen content is large enough. A SiOxFy passivation layer is formed under such conditions. This threshold is reached at lower oxygen proportions if the substrate is cooled down to cryogenic temperatures. In this article, we present a mass spectrometry study of this oxidation threshold in different experimental conditions (temperature, source rf power, self-bias) on bare silicon wafers. The presence of the threshold...

  18. Faraday cage angled-etching of nanostructures in bulk dielectrics

    Latawiec, Pawel; Burek, Michael J.; Sohn, Young-Ik; Lončar, Marko

    2016-01-01

    For many emerging optoelectronic materials, heteroepitaxial growth techniques do not offer the same high material quality afforded by bulk, single-crystal growth. However, the need for optical, electrical, or mechanical isolation at the nanoscale level often necessitates the use of a dissimilar substrate, upon which the active device layer stands. Faraday cage angled-etching (FCAE) obviates the need for these planar, thin-film technologies by enabling in-situ device release and isolation thro...

  19. Downstream oxygen etching characteristics of polymers from the parylene family

    Callahan, Russell R. A.; Pruden, Kristin G.; Raupp, Gregory B.; Beaudoin, Stephen P.

    2003-01-01

    As dictated by the International Technology Roadmap for Semiconductors, there is an immediate need to develop low dielectric materials for use in metalization and packaging schemes in integrated circuits. The etching characteristics of a family of low dielectric polymers, the parylenes, are discussed. These are good models for polymer dielectrics, and are attractive for packaging applications. Three types of parylene are studied: parylene-N, parylene-C, and parylene AF-4. Parylene films on si...

  20. Gas Electron Multiplier produced with the plasma etching method

    Inuzuka, M; Ozawa, K; Tamagawa, T; Isobe, T

    2004-01-01

    We have produced Gas Electron Multiplier (GEM) using the plasma etching method. The new GEM has holes with a cylindrical shape and can hold up to 520V in nitrogen. Amplification factor was measured as a function of the applied voltage. A gain of 10^4 was obtained in argon-mixture gases. The gain characteristics are very similar to those of the GEMs made at CERN.