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Abstract The aim of this study is to study the effects of Boron (B) pollution in Buyuk Menderes river on planted crops and agricultural areas constructed in the irrigation schemes by the State Hydraulic Works (DSI) of the Lower Buyuk Menderes basin, Turkey. The studied irrigation schemes in the basin are Saraykoy, Pamukkale, Nazilli, Aydin, Sultanhisar, Koarli, and Soke. Mean B concentrations of river water used in the irrigation schemes ranged from 0.10 to 0.43 mgB L-1 for the period of 2008 to 2009. A total of 100,556 ha of the agricultural area and the basin groundwater resources are under the influence of B pollution from the Buyuk Menderes river. The amount of B accumulating in soils and seepage in the groundwater due to the used irrigation water was 18,495,350 and 9153 kgB yr-1, resp...
Abstract Turnip (Brassica rapa L.) plants were grown at adequate (25 mmol L-1) or low (<2.5 mmol L-1) boron (B) supply in nutrient solution for 1 month. The shoot and root dry weight was inhibited by up to 77% and 45%, respectively, in response to low B supply. The results of a retranslocation experiment showed that loaded B in the mature leaves was depleted rapidly during the experimental period and that this B was retranslocated to younger leaves as judged by B depletion from mature leaves simultaneously with the appearance of B in new leaves. Up to 89% of the B content of mature leaves was lost during 4 weeks of growth under B-deficient conditions. In addition, in B-deficient plants, a greater proportion of the total plant B was allocated to young leaves compared with B-sufficient plant...
...comAbstract: Hepatocellular carcinoma (HCC), once thought to be a rare tumor in North America, is a rapidly increasing type of cancer in recent years in the United States. Current treatment modalities to halt the disease progression are only marginally effective. The mainstay treatment ...In addition, NM was shown to down-regulate urokinase plasminogen activator (by fibrin zymography) and up-regulate tissue inhibitors of metalloproteinases (by reverse zymography) in another HCC cell line, Sk-Hep-1. MMP-2 and MMP-9 activities were further modulated by cytokines, inducers and inhibitors, including NM. In ... Our results suggest that NM is an excellent candidate for therapeutic use in the treatment HCC by inhibiting critical parameters in cancer development and progression, such as proliferation, invasion and metastasis, and by inducing apoptosis. Last update: 2 September 2011 JavaScript seems ...
Title: Illicit Crops in Tropical America: Deforestation, Landslides, and the Terrestrial Carbon Stocks. Author: Lopez-Rodriguez, Sara R.; Blanco-Libreros, Juan F. ...
... 500 ppm, boron increases the 0.2% offset strength; results show that boron doping does not appreciably affect ultimate compressive strength; for 0 ...
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
Grain refinement behavior of copper alloys cast in permanent molds was investigated. This is one of the least studied subjects in copper alloy castings. Grain refinement is not widely practiced for leaded copper alloys cast in sand molds. Aluminum bronzes and high strength yellow brasses, cast in sand and permanent molds, were usually fine grained due to the presence of more than 2% iron. Grain refinement of the most common permanent mold casting alloys, leaded yellow brass and its lead-free replacement EnviroBrass III, is not universally accepted due to the perceived problem of hard spots in finished castings and for the same reason these alloys contain very low amounts of iron. The yellow brasses and Cu-Si alloys are gaining popularity in North America due to their low lead content and amenability for permanent mold casting. These alloys are prone to hot tearing in permanent mold casting. Grain refinement is one of the solutions for reducing this problem. ...
The first defence of the America's Cup outside of the USA took place off Fremantle, Western Australia, between October, 1986 and February, 1987. Fremantle Hospital, the nearest hospital to the marinas,...Full Text Available
This article focuses on results of the systematic review from the Guide for Useful Interventions for Activity in Latin America project related to school-based...Full Text Available
BackgroundAchieving sustainable economic and social growth through advances in health is crucial in Latin America within the framework of the United Nations Millennium Development...Full Text Available
Previous work has provided evidence that plants may require boron to maintain adequate levels of pyrimidine nucleotides, suggesting that the state of boron deficiency may actually be one of pyrimidine...Full Text Available
Many plants are known to reduce the toxic effects of high soil boron (B) by reducing uptake of B, but no mechanism for limiting uptake has previously been identified. The B-tolerant cultivar of barley...Full Text Available
... by the boron doping in most of the alloys except for Al66Mn9Zr25 + 50 ppm B alloy; permanent deformation at ultimate compressive strength is not ...
A new method of the synthesis of high molecular polybutylene terephthalate (PBT) is developed with the use of Irganox 1010, tris(nonylphenyl) phosphite and hypophosphite as stabilizers and boron nitride or boron oxide as a catalyst is proposed.
Following a brief overview of the terrestrial distribution of boron in rocks, soil, and water, the history of the discovery, early utilization, and geologic origin of borate minerals is summarized....Full Text Available
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
By treatment of ?-substituted acetylacetone derivatives with boron trifluoride etherate a series of earlier unknown boron difluoride complexes is obtained. The series includes binuclear complexes containing boron in the chelate fragment connected via sulfur or selenium atom. Gas chromatographic and spectral characteristics of the obtained compounds were investigated. By means of chromato-mass spectrometry their reaction with hydrazine in acidic and alkaline media was studied
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of ...
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
The effects of boron addition on weldability and high temperature strength properties were investigated for Hastelloy alloy XR used TIG welding process with the filler metals. Four versions of filler metals with different boron contents were used. The results obtained may be summarized as follows: (1) The influence of boron addition on weldability was not observed within the range of the present experiment. (2) The result of chemical analysis for deposited metals showed that boron desorption did not occur during welding. (3) The tensile properties of weldments, particularly in high temperature ductility were raised with increasing boron content. (4) In the creep properties of weldments, creep rupture life increased with increasing boron content under the given stress conditions. (author).
The effects of boron addition on weldability and high temperature strength properties were investigated for Hastelloy alloy XR used TIG welding process with the filler metals. Four versions of filler metals with different boron contents were used. The results obtained may be summarized as follows: 1) The influence of boron addition on weldability was not observed within the range of the present experiment. 2) The result of chemical analysis for deposited metals showed that boron desorption did not occur during welding. 3) The tensile properties of weldments, particularly in high temperature ductility were raised with increasing boron content. 4) In the creep properties of weldments, creep rupture life increased with increasing boron content under the given stress conditions. (author).
Nickel-based alloys are presently used as brazing filler metals for components which undergo mechanical stress in corrosive conditions, f. e. heat exchangers. When soldering chrome containing steel parts with nickel based brazing filler metals additionally containing boron and silicon a reaction of chrome and boron can occur. This evolution of chromium borides, depositing on grain boundaries, causes a lack of chrome in the steel part. A drop of the chrome content in the parts below 13 % leads to a loss of corrosion resistance. It is possible to change the microstructure of brazing joints by modification with chromium and molybdenum. Continuous brittle phases could be successfully avoided with this modification. Furthermore it could be shown that the choice of additives, the heating respectively cooling rate and the brazing temperature have important influence on the microstructure evolution and therefore on the mechanical and corrosive ...
as manufacturing plants and laboratories, including the Chemical Laboratory at the House of David in Benton Harbor, Michigan. Built in America: Historic Building Buildings Survey/...
"Physics in America is at a crossroads and in crisis, just as humanity stands on the verge of great discoveries about the nature of matter and the universe, a panel from the National Academy of sciences concludes in a new report."
site for reference information. Other recipients include Google's Translator, WikiLeaks, The ICUN Red List of Threatened Species, and the Public Library of Science (PLOS)....
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been ...
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters ...
We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.
This paper will describe the application of power generation by the use of microturbine technology by Capstone Turbine Corporation throughout South America. The purpose of this paper is to describe the technology and the experience gained over the last six years. The microturbines are power generation systems that produce energy from a diverse range of liquid or gaseous fuels. The generator is driven by a small gas turbine with a common shaft for the rotors of the generator and the engine. (author)
A primary and basic question prevails in the methanol industry - What will be the global demand for methanol, for the expanded production of methyl tertiary butyl ether (MTBE), during the next few years This article attempts to answer the question by discussing the global market; supply and demand factors; the market in North America, Western Europe, Far East and Asia, South America, and other regions; and the uncertainties that remain.
Given the possibility of highly pathogenic H5N1 avian influenza arriving in North America and monitoring programs that have been established to detect and track it, we review intercontinental movements...Full Text Available
The ab initio pseudopotential method is used to study transient-enhanced-diffusion (TED) related processes. The electronic degrees of freedom are included explicitly, together with the fully self-consistent treatment of the electron charge density. A large supercell and a fine k-point mesh are used to ensure numerical convergence. Such method has been demonstrated to give quantitative description of defect energetic. We will show that boron diffusion is significantly enhanced in the presence of the Si interstitial due to the substantial lowering of the migrational barrier through a kick-out mechanism. The resulting mobile boron can also be trapped by another substitutional boron, forming an immobile and elect rically inactive two-boron pair. Similarly, carbon diffusion is also enhanced significantly due to the pairing with Si interstitial. However, carbon binds to Si interstitial much more strongly than ...
Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower ...
Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...
This paper describes a system for fast mass spectrometric characterization of high-temperature outgassing measurements and measuring the total quantity of gas evolved for boron nitride. 2 references, 1 figure, 2 tables.
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V ...
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...
A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.
The adsorptive removal of boron from aqueous solution by using the neutralized red mud was studied in batch equilibration technique. The effects of pH, adsorbent dosage, initial boron concentration and contact time on the adsorption were investigated. The experiments demonstrated that boron removal was of a little fluctuation in pH range of 2-7 and it takes 20 min to attain equilibrium. The adsorption data was analyzed using the Langmuir and the Freundlich isotherm models and it was found that the Freundlich isotherm model represented the measured sorption data well.
The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).
In boron mining and processing operations, large amounts of clay containing tailings have to be discarded. Being rich in boron, the tailings do not only cause economical loss but also pose serious environmental problems. Large areas have to be allocated for waste disposal. In order to alleviate this problem, the possibility of using clayey tailings from a borax concentrator in red brick manufacturing was investigated. Up to 30% by weight tailings addition was found to improve the brick quality.
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
The purpose of this research was to investigate the de-entrainment of boron for evaporators used in nuclear power plants. The forced circulation and semi-continuous type evaporator was used in the experiment. Cyclone and glass-wool packed column which is supposed to provide good decontamination factor as well as easy maintenance, were selected as de-entrainment device to be used in the evaporation of radioactive liquid wastes. The de-entrainment device combined with cyclone and glass-wool column has shown overall DF more than 1000 for boron.
The profile of focused boron ion beam (FIB) from a liquid metal ion source was determined by MOS device characteristics and resist exposure experiments. A focused boron ion beam was line-scanned into the middle of the channel region along the source to drain direction of a MOSFET, and the effective channel width is determined from electrical measurements. PMMA resist was also exposed by a line-scanned boron FIB and the developed contour was observed by a SEM. The profile of the focused boron ion beam with a diameter of around 0.2 ..mu..m was determined by these two methods and it was found to have about a 1 ..mu..m wide tail at around three orders of magnitude below the peak current density region. The profile difference between the two measurements are attributed to the boron diffusion in silicon by subsequent heat-treatments during device fabrication.
Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated dopants produced during ...
Conference abstract book contains seven sections: Plenary-4 abstracts; Chemical-9 abstracts; Radiation-7 abstracts; Ultra Low Doses and Medicine-6 abstracts; Biomedical-11 abstracts; Risk Assessment-5 abstracts and Poster Sessions-25 abstracts. Each abstract was provided by the author/presenter participating in the conference.
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. ...
In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings ...
In this paper, we study the effect of the Ge{sup +} preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge{sup +} at 150 keV to doses ranging from 1x10{sup 15} to 8x10{sup 15} ions/cm{sup 2}. Boron was subsequently implanted at 3 keV with a dose of 1x10{sup 14} ions/cm{sup 2}. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are ...
In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative ...
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess ...
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the ...
The idea to couple the Treatment Planning System (TPS) to the information on the real boron distribution in the patient is the main added value of the new methodology set-up at DIMNP of University of Pisa, in collaboration with the JRC of Petten (NL). The methodology has been implemented in the new TPS, called BDTPS (Boron Distribution Treatment Planning System), which takes into account the actual boron distribution in the patient brain, while the standard TPS assumes a uniform boron distribution, absolutely far from the reality. Nowadays, Positron Emission Tomography (PET) is able to provide this in vivo information. The new TPS, based on the Monte Carlo technique, has been validated comparing the main BNCT parameters (thermal flux, boron dose, etc.) as measured during the irradiation of a special heterogeneous boron phantom (HEBOM), ad hoc designed, as ...
This study revisits the environmental Kuznets curve (EKC) hypothesis for water pollution by using a recent dynamic technique, which is the generalized method of moments (GMM) approach, for a board sample of 97 countries during the period 1980-2001. On a global scale, as we cannot obtain the EKC relationship between real income and biological oxygen demand (BOD) emissions, this paper further classifies these countries into four regional groups - Africa, Asia and Oceania, America, and Europe - to explore whether the different regions have different ECK relationships. The empirical results show evidence of the inverted U-shaped EKC relationships' existence in America and Europe, but not in Africa and Asia and Oceania. Thus, the regional difference of EKC for water pollution is supported. Furthermore, the estimated turning points are, approximately, US$13,956 and US$38,221 for America and Europe, respectively.
This study revisits the environmental Kuznets curve (EKC) hypothesis for water pollution by using a recent dynamic technique, which is the generalized method of moments (GMM) approach, for a board sample of 97 countries during the period 1980-2001. On a global scale, as we cannot obtain the EKC relationship between real income and biological oxygen demand (BOD) emissions, this paper further classifies these countries into four regional groups - Africa, Asia and Oceania, America, and Europe - to explore whether the different regions have different ECK relationships. The empirical results show evidence of the inverted U-shaped EKC relationships' existence in America and Europe, but not in Africa and Asia and Oceania. Thus, the regional difference of EKC for water pollution is supported. Furthermore, the estimated turning points are, approximately, US$13,956 and US$38,221 for America and Europe, respectively.
This study revisits the environmental Kuznets curve (EKC) hypothesis for water pollution by using a recent dynamic technique, which is the generalized method of moments (GMM) approach, for a board sample of 97 countries during the period 1980-2001. On a global scale, as we cannot obtain the EKC relationship between real income and biological oxygen demand (BOD) emissions, this paper further classifies these countries into four regional groups - Africa, Asia and Oceania, America, and Europe - to explore whether the different regions have different ECK relationships. The empirical results show evidence of the inverted U-shaped EKC relationships' existence in America and Europe, but not in Africa and Asia and Oceania. Thus, the regional difference of EKC for water pollution is supported. Furthermore, the estimated turning points are, approximately, US$13,956 and US$38,221 for America and Europe, respectively. (author)
A declaration for achieving universal basic education adopted by the World Conference on Education for All in Jomtien, Thailand, as it relates to Latin America is discussed in this paper. The document then offers an examination of educational expansion in Latin America, a discussion of disproportionate educational budget cuts, and an analysis of challenges that stem from two trends: (1) the growing gap between population growth and educational expansion; and (2) low educational quality and high repetition rates. Proposals are offered for major, gradual educational reforms based on an increased level of fiscal resources, and a change in resource management responsive to economic needs. The major obstacle to implementation is argued to be the political economy of education and of adjustment. International support of local initiatives is important in achieving basic educational equity. (33 references) (LMI)
During the last years one focus of German PWR safety analysis was boron dilution events with the potential of reactivity transients. Coolant with a low boron concentration could be collected in localized areas of the reactor coolant system e.g. by separation of borated reactor coolant into highly concentrated and diluted fractions (inherent dilution) which can occur during reflux- condenser heat transfer after a small break loss of coolant accident with a limited availability of the emergency core cooling systems. The TUeV NORD SysTec was charged by German supervisory authorities with the assessment of the safety analyses of boron dilution events presented by the utilities. These analyses are based on the simulation of boron dilution and transport processes in conjunction with a number of dedicated experiments. The analyses shall demonstrate that boron dilution events cannot lead to ...
During the last years one focus of German PWR safety analysis was boron dilution events with the potential of reactivity transients. Coolant with a low boron concentration could be collected in localized areas of the reactor coolant system e.g. by separation of borated reactor coolant into highly concentrated and diluted fractions (inherent dilution) which can occur during reflux- condenser heat transfer after a small break loss of coolant accident with a limited availability of the emergency core cooling systems. The TUeV NORD SysTec was charged by German supervisory authorities with the assessment of the safety analyses of boron dilution events presented by the utilities. These analyses are based on the simulation of boron dilution and transport processes in conjunction with a number of dedicated experiments. The analyses shall demonstrate that boron dilution events cannot lead to ...
During the last years, boron dilution events with the potential of reactivity transients were an important issue of German PWR safety analyses. A coolant with a low-boron concentration could be collected in localized areas of the reactor coolant system, e.g., by separation of a borated reactor coolant into highly concentrated and diluted fractions (inherent dilution) which can occur during reflux-condenser heat transfer after a small break loss of coolant accident with a limited availability of the emergency core cooling systems. During the course of follower core assessments, TUV NORD SysTec appraises safety analyses of boron dilution events presented by the utilities. These analyses are based on the simulation of boron dilution and transport processes in conjunction with a number of dedicated experiments. The analyses demonstrate that boron dilution events cannot lead to ...
In X-linked nephrogenic diabetes insipidus (NDI) the urine of male patients is not concentrated after the administration of the antidiuretic hormone arginine-vasopressin. This disease is due to mutations...Full Text Available
The protozoan parasite Trypanosoma cruzi is the etiologic agent of Chagas disease, a neglected tropical infection that affects millions of people in the Americas. Current chemotherapy...Full Text Available
BackgroundTrypanosoma cruzi, the etiologic agent of Chagas Disease, is a major vector borne health problem in Latin America and an emerging...Full Text Available
Background: In North America and Europe, 80% of invasive skin cancers are basal cell carcinoma while 20% are squamous cell carcinoma (SCC). In contrast, African studies reveal a preponderance...Full Text Available
We combine data from the Latin American Migration Project and the Mexican Migration Project to estimate models predicting the likelihood of taking of first and later trips to the United States...Full Text Available
A brief survey is given of some ways in which heat, which would normally be lost from a cupola furnace, is being recovered, either as hot water, steam, or electricity. Examples are provided of heat-recovery systems in Germany, Italy, and America. (author).
BackgroundConducted as part of the Urologic Diseases in America project whose aim was to quantify the burden of urologic diseases on the American public, this study focuses on Veterans...Full Text Available
Benzidine (4,4'-diaminobiphenyl) is a known human carcinogen; exposure to this substance resulted in an epidemic of bladder cancer among workers in the dye industry in Europe and North America. The...Full Text Available
125 Years of Science for America - 1879 to 2004 link to Western Coastal and Marine Geology website U.S. Geological Survey Professional Paper 1687 Marine Geology and Earthquake...
Provides standardized energy balance sheets expressed in a common unit of tons of oil equivalent for all OECD countries as well as the regions: OECD total, IEA, North America, Pacific, OECD Europe, EEC and Yugoslavia.
Haemophilus parasuis causes polyserositis in swine. Fifteen serovars have been characterized by immunodiffusion test, but many field strains are not typeable. Isolates (n...Full Text Available
A substantial design and development program has been underway in the United States of America on the Darrieus vertical axis wind turbine (VAWT). The purpose of this report is to present currently available information on: design, construction, and testin...
The results of clinical trials conducted in Europe and North America have been incorporated into treatment strategies for breast cancer in Japan. Despite the use of similar treatment regimens, why has...Full Text Available
Cryptic invasions are a largely unrecognized type of biological invasion that lead to underestimation of the total numbers and impacts of invaders because of the difficulty in detecting them. The distribution...Full Text Available
The occurrence of outbreaks of cholera in Africa in 1970 and in Latin America in 1991, mainly in coastal communities, and the appearance of the new serotype Vibrio cholerae O139 in...Full Text Available
"Correctional Health Care: Implications for Public Health Policy" is the first in a series of articles that examines the special health care needs of persons who are incarcerated in America's correctional...Full Text Available
Because there are more than 101 million residential households in the United States today, it is not surprising that existing residential buildings represent an extremely large source of potential energy savings. Because thousands of these homes are renovated each year, Building America is investigating the best ways to make existing homes more energy-efficient, based on lessons learned from research in new homes. The Building America program is aiming for a 20%-30% reduction in energy use in existing homes by 2020. The strategy for the existing homes project of Building America is to establish technology pathways that reduce energy consumption cost-effectively in American homes. The existing buildings project focuses on finding ways to adapt the results from the new homes research to retrofit applications in existing homes. Research activities include a combination of computer modeling, field demonstrations, and long-term ...
A remarkable range of variation has been demonstrated in the biting habits of A. darlingi in South America. At the centre of its area of distribution, the species comprises both anthropo-endophilic...Full Text Available
Remote sensing data over North America document the ubiquity of secondary aerosols resulting from a combination of primary biogenic and anthropogenic emissions. The spatial and temporal distribution...Full Text Available
Although salamanders are characteristic amphibians in Holarctic temperate habitats, in tropical regions they have diversified evolutionarily only in tropical America. An adaptive radiation centered...Full Text Available
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3x10"1"5 cm"-"2 F"+ implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000 deg. C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy (TEM). Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times (15 s). TEM images show a band of ...
Over the last year, the energy industry firmly established itself as the premier borrowing sector in the international financial markets. While Europe and North America's major energy companies continue to access the loan market as their main source of financing, with a steady flow of new international borrowings, their peers from other areas of the world, such as Latin America and the Middle East, are in the process of positioning themselves in the market as regular borrowers and have become an important new source of fee income for industry's bankers. (Author).
Wind Powering America program launched the New England Wind Forum (NEWF) in 2005 to provide a single comprehensive source of up-to-date, Web-based information on a broad array of wind energy issues pertaining to New England. The NEWF newsletter provides New England stakeholders with updates on wind energy development in the region. In addition to regional updates, Issue #5 offers an interview with Angus King, former governor of Maine and co-founder of Independence Wind.
The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can be found in focused ion beam systems. They can provide ion beams of essentially any element in the Periodic Table. The newly developed combined rf ion-electron beam unit improves greatly the performance of the secondary ion mass spectrometry tool. (3) ...
Boron carbide is a high-technological ceramic material (it is used for lightweight armor, neutron absorbers, wear pieces, etc.). Hot pressing (2200"0C, 40 MPa, Ar atmosphere) and recently high isostatic pressing, are the best know ways for industrial preparation of boron carbide items. Pressureless sintering using metallic, inorganic, B+C, additives is not successful, since, despite having a high density, impurities remain present. Pressureless sintering of boron carbide (or silicon carbide composite) using free carbon addition, produced by in-situ pyrolysis of a Novolaque-type phenol-formaldehyde resin (#approx =# 9 wt%), is now possible in industry. A promising new method is the use of organic precursors, e.g. polycarbosilane with a small amount of phenolic resin, giving CSi and C by in-situ pyrolysis; the resulting boron carbide ceramics have high density (> 92%) and contain no free carbon and a ...
The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for ...
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si{sub 1-x-y}Ge{sub x}C{sub y} during 750{sup o}C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {l_brace}311{r_brace} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairing reaction that ...
Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si_1_-_x_-_yGe_xC_y during 750"oC inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes #left brace#311#right brace# defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C_iC_s) pairing reaction that successfully ...
The design boron concentration of the Boron Injection Tank (BIT) in Daya Bay Nuclear Power Station is 21000 #mu#g/g. The BIT should operate under high temperature to avoid boron crystallization, causing higher evaporation, frequent water makeup, higher deposition and pipe blockage to decrease the operability of the safety injection system. The author proposes to decrease the boron concentration in BIT from 21000 #mu#g/g to 7000 #mu#g/g to solve the existing problem. The safety analyses (core DNBR and containment response) are conducted and other impacts are evaluated for the BIT reduction. The analysis results show that the core DNBR meets the safety criterion and the containment pressure is within the design value for the steam line rupture accident after the BIT reduction. The feasibility study report of Daya bay BIT reduction has been approved by NNSA. The site implementation of BIT reduction has ...
The results of the study of dimensionally dependent fluorescence of boron difluoride ?-diketonates of general formula (R1COCHCOR2)BF2 are presented. The fact that for most of the compounds studied a noticeable hypsochrome shift of the luminescence band maximum is characteristic during transition from bulk crystals to microcrystals was detected. However, for boron difluoride dibenzoylmethanate having a unique supramolecular structure, a bathochromic shift of luminescence due to the crustal size reduction is observed. The dimensionally dependent luminescence properties of the complexes have been analyzed within the exciton mechanism
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10{sup 15} to 1 x 10{sup 16} cm{sup -2}. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.
We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
Inherent boron dilution can occur in case of a Small Break LOCA when low borated water is mainly accumulated in the U-legs due to reflux boiling in the Steam Generator tubes after the loss of natural circulation. The restart of the natural circulation may lead to criticality because of the injection of these low borated slugs towards the core. To evaluate this potential risk, the boron concentration at the core inlet has to be known which makes necessary to estimate the mixing phenomena in the cold leg, in the downcomer and in the lower plenum: CFD calculations are required. First of all the validation of CFX5 CFD code on the relevant phenomena of inherent boron dilution has been established (UPTF TRAM C3 test). Then, an application to the 900 MW French Pressurized Water Reactor series has been performed. (authors)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
Inherent boron dilution can occur in case of a small Break LOCA when low borated water is accumulated in the U-legs due to reflux boiling in the Steam Generator tubes after the loss of natural circulation. The restart of the natural circulation may lead to criticality because of the injection of these low borated slugs towards the core. To evaluate this potential risk, the boron concentration at the core inlet has to be known which makes necessary to estimate the mixing phenomena in the cold leg, in the downcomer and in the lower plenum: CFD calculations are required. First of all the validation of CFX5 CFD code on the relevant phenomena of inherent boron dilution has been established (UPTF TRAM C3 test). Then, an application to the 900 MW French Pressurized Water Reactor series has been performed. (authors)
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.
Boron/aluminum skins and channels were used in the fabrication of a prototype honeycomb sandwich avionics shelf. The avionic shelves are stiffness-critical and must be vibration tolerant. In conjunction with the shelf mounting system, they must isolate the avionics equipment from the severe vibration of the primary and secondary structure nearby. Design rationale, fabrication procedures, vibration test criteria and test results are presented. (9 fig) (U.S.).
Research is described in the development of organometallic reagents in which the boron was attached to a nonreactive organic or inorganic matrix such as polystyrene, silica, or alumina. We developed the synthesis of oxygen-15 labelled butanol, which has been found to be a valuable blood flow agent in humans. We have also developed a series of polymeric borane derivatives which were used to prepare nitrogen-13 labelled amines.
In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be ...
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the silicon boride layer ...
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...
An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms ...
Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding ...
Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction ...
Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated dopants produced during ...
This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Functionally graded material is an enabling technology for lightweight body armor improvements. The objective was to demonstrate the ability to produce functionally graded ceramic-polymer and ceramic-metal lightweight armor materials. This objective involved two aspects. The first and key aspect was the development of graded-porosity boron-carbide ceramic microstructures. The second aspect was the development of techniques for liquid infiltration of lightweight metals and polymers into the graded-porosity ceramic. The authors were successful in synthesizing boron-carbide ceramic microstructures with graded porosity. These graded-porosity boron-carbide hot-pressed pieces were then successfully liquid-infiltrated in vacuum with molten aluminum at 1,300 C, and with liquid polymers at ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time ...
The focus of the May-June issue is on training and information technology. Major articles/reports in this issue include: Communicating effectively, by Alain Bucaille, AREVA; Reputation management, by Susan Brisset, Bruce Power; Contol room and HSI modernization guidance, by Joseph Naser, EPRI; How far are we from public acceptance, by Jennifer A. Biedscheid and Murthy Devarakonda, Washington TRU Solutions LLC; Spent fuel management options, by Brent W. Dixon and Steven J. Piet, Idaho National Laboratory; Industry Awards; A secure energy future for America, by George W. Bush, President, United States of America; Vision of the future of nuclear energy, by Anne Lauvergeon, AREVA; and, Plant profile: strategy for transition to digital, TXU Power.
This report summarizes the activities carried out by Aspen Systems Corporation in support of the Department of Energy's Rebuild America program during the period from October 9, 1999 to October 31, 2004. These activities were in accordance with the Scope of Work contained in a GSA MOBIS schedule task order issued by the National Energy Technology Laboratory. This report includes descriptions of activities and results in the following areas: deployment/delivery model; program and project results; program representative support activities; technical assistance; web site development and operation; business/strategic partners; and training/workshop activities. The report includes conclusions and recommendations. Five source documents are also provided as appendices.
Rosas-Valdez, R., Choudhury, A. & Prez-Ponce de Len, G. (2011). Molecular prospecting for cryptic species in Phyllodistomum lacustri (Platyhelminthes, Gorgoderidae). -Zoologica Scripta, 40, 296-305. Partial sequences of the 28S ribosomal RNA and cytochrome c oxidase I (COI) genes were compared among populations of a widely distributed and morphologically uniform digenean species in North America, Phyllodistomum lacustri, a parasite characteristically associated with ictalurid catfishes. Specimens were collected from the urinary bladder of ictalurid hosts in six localities of North America, spanning most of the latitudinal range of this freshwater fish group. Sequences of other congeneric species, including a potentially close relative, P.-staffordi, were also obtained and used for comparis...
Thirty-nine conference papers review practical and topical aspects of hydroelectric development, from planning and design to construction, operation and refurbishment. More than half of the papers deal with small-scale hydro, reflecting the continuing strong interest in this subject throughout the world. The planning and economic evaluation of large-scale hydro schemes and pumped-storage plants, and environmental aspects of hydroelectric developments are also discussed. A special session has also been included on hydro in Latin America, where some of the world's largest schemes are planned or under construction. The papers reproduced here draw on the expertise of engineers from eighteen countries in North and South America, Europe, Asia, Australasia and Africa. All the papers were selected and indexed separately.
A fragmented fossil bone incised with the figure of a proboscidean was recently found at Vero Beach, Florida near the location where Late Pleistocene fauna and human bones were recovered from 1913 to 1916. This engraving may represent the oldest and only existing example of Terminal Pleistocene art depicting a proboscidean in the Americas. Because of the uniqueness, rarity, and potential antiquity of this specimen, caution demanded that a variety of tests be used in an attempt to verify its authenticity. The mineralized bone was identified as mammoth, mastodon, or giant sloth. Rare earth element analysis was consistent with the fossil bone being ancient and originating at or near the Old Vero site (8-IR-9). Forensic analysis suggests the markings on the bone are not recent. Optical microsc...
The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of the boron atoms from the site of ...
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
The oxidation of boron carbide in steam or air was recently extensively studied especially in Forschungszentrum Karlsruhe, Institut fuer Materialforschung. An important data set is available for the interaction modelling. An oxygen diffusion model through the superficial liquid boron oxide formed on the boron carbide external surface associated to a superficial reaction between the liquid boron oxide and steam is proposed to simulate the experimental kinetics from BOX rig and thermogravimetric tests on the interaction between steam and boron carbide at a temperature range 800 C to 1400 C. The oxygen diffusion model will be also useful to simulate interaction between boron carbide and Ar+O2 (air simulation) atmosphere when the steam pressure becomes zero. From the analysis of BOX rig experimental kinetics of non-condensable (H2, CO2, CO and CH4) gases we propose ...
The article surveys studies into the global warming which have found that the OECD countries are responsible for less than half of the total registered warming. Calculation and analysis methods for estimating the global contributions from the blocks of OECD, Africa/America/Middle East, Asia and former Soviet Union/Eastern Europe are presented. The results and some pollution abatement measures are discussed.
The role of the Latin American state oil companies (LASOCs) in establishing national industries to fuel economic development is discussed. LASOCs are represented internationally in an organization called ARPEL (Asistencia Reciproca Petrolera Estatal Latinoamericana) which is aimed to foster interchange, cooperation, and mutual assistance among its 20 member companies, as well as to promote economic integration of Latin America through its petroleum sector. State oil companies in Latin America date from 1922, when the oldest LASOC was created in Argentina. LASOCs are responsible for ca 80% of petroleum activities in Latin America. As of 1990, Latin American oil reserves, including gas liquids, amounted to ca 122 billion bbl or 12.2% of the world total. Regional oil production averaged 7.4 million bbl/d in 1990. Refining capacity is ca 7.7 million bbl/d, of which 80% is operated directly by LASOCs. Natural gas reserves are ...
A survey carried out in 2005 among members of a healthy population of children living in Bolivia and Peru revealed that fecal carriage of Escherichia coli strains resistant to expanded-spectrum...Full Text Available
The NREL Sensitized Solar Cell (SSC) Core Program supports the Solar America Initiative by: (1) targeting new devices and processes for commercialization by 2015 that are less expensive, more efficient, highly reliable, and environmentally benign; (2) collaborating with DOE OS/BES to conduct basic research targeting breakthroughs in key areas, such as ultra-high efficiency and/or ultra-low cost materials and devices.
This 'Issues in Ecology' article from the Ecological Society of America provides information about the consequences of nutrient enrichment along the US coast. It describes problems such as harmful algal blooms (HABs), anoxia, hypoxia, and dead zones. It explains which nutrients are involved and describes implications of excess nutrients in regions such as the Gulf of Mexico/Mississippi River basin. The article features several color photographs, maps, and diagrams.
The author blows the whistle about what he considers as a worldwide environmental crisis. He brings a fresh outlook to the crises of destabilizing climate change and rising competition for energy - both of which could poison our world if we do not act quickly and collectively. His argument speaks to all of us who are concerned about the state of America in the global future. The author proposes that an ambitious national strategy - which he calls 'Geo-Greenism' - is not only what we need to save the planet from overheating; it is what we need to make America healthier, richer, more innovative, more productive, and more secure. He explains a new era - the Energy-Climate era - through an illuminating account of recent events. He shows how 9/11, Hurricane Katrina, and the flattening of the world by the Internet (which brought 3 billion new consumers onto the world stage) have combined to bring climate and energy issues to Main Street. But they ...
This paper reports on the third workshop on the development of neutral-beam injectors held from 19-23 October 1981 at Gatlinburg, Tennessee, USA. The programme of the workshop was devoted to the development of positive-ion-based neutral injectors, although several techniques for producing negative ion beams were also discussed.
The report examines common ventilation and air conditioning systems and strategies for both domestic and commercial buildings; and covers issues such as energy conservation, indoor air quality and occupant comfort. Drawing data from many countries in Europe and the United States of America, various natural, mechanical and air conditioning systems were compared using criteria such as climate, level of occupant interaction, and level of system comfort. This classification system is evaluated and seen as a valuable framework for further research. (U.K.)
... Cholesterol High Blood Glucose High Blood Pressure Overweight Physical Activity Small Steps for Your Health Smoking Age, ... blood pressure, unhealthy cholesterol, and high blood glucose. Physical Activity Staying active helps manage your blood glucose, ...
References covering the years 1904-80 are listed under the following headings: cultivation and occurrence (India and Pakistan, Africa, South America, Pacific, Middle East); Taxonomy, morphology, variation and selection; Reference works and reviews; Ecology of Prosopis (General effects on surrounding soil and vegetation): Physiology (General, Roots, Growth, Hydrology, Saline tolerance); Control of mesquite: Propagation (Germination and other nursery techniques, Vegetative propagation): and Utilization (General, Chemical analyses, Food and Ethnobiology, Fodder, Wood, Charcoal, Gum, Paper). 141 references.
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of silicon ...
as for direct energy conversion in specialized direct electrical energy conversion plants. Figure 1. An energetic (~163KeV) proton and a 11boron nucleus fuse ...
Responsive biomaterials play important roles in imaging, diagnostics, and therapeutics. Polymeric nanoparticles (NPs) containing hydrophobic and hydrophilic segments are one class of biomaterial...Full Text Available
Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial ...
Ion implantation of Si (60 keV, 1x10"1"4/cm"2) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1x10"1"8 and 1x10"1"9/cm"3. Following post-implantation annealing at 740 degree C for 15 min to allow agglomeration of the available interstitials into elongated #left brace#311#right brace# defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in #left brace#311#right brace# defects as a function of boron concentration, up to nearly complete disappearance of the #left brace#311#right brace# defects at boron concentrations of 1x10"1"9/cm"3. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial clustering, and implications for ...
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles ...
The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at E_c-0.23, E_v+0.29, and E_v+0.51 eV are assigned to B_iO_i, B_iC_s, and B_iB_sH_i respectively. B_iC_s is passivated by one H atom. Evidence for the existence of B_iC_s has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.
A prototype detector based on the inclined absorber layer principle is introduced. For the Liquids Reflectometer at the Spallation Neutron Source, it is shown to be a significant improvement over its current detector, which imposes an instantaneous count rate limitation of 50 kcps.
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
Full text of publication follows: The TUV NORD e.V. is an independent Technical Support Organisation (TSO) performing safety assessments in almost every field of technology. In nuclear safety the TUV can look back on more than 40 years of experience. In the last years in Germany PWR safety analyses were focussed on boron dilution events with the potential of reactivity transients. The possibility of coolant with a low boron concentration collected in localized areas of the reactor coolant system (RCS) can be caused by injection of coolant with less boron content from interfacing systems (external dilution) as well as separation of borated reactor coolant into highly concentrated and diluted fractions (inherent dilution). Inherent dilution can e.g. occur after reflux-condenser heat transfer after a small break loss of coolant accident (SBLOCA) with a limited operability of the emergency core cooling (ECC) systems. The TUV ...
We highlight the role of the light elements (Li, Be, B) in the evolution of massive single and binary stars, which is largely restricted to a diagnostic value, and foremost so for the element boron. However, we show that the boron surface abundance in massive early type stars contains key information about their foregoing evolution which is not obtainable otherwise. In particular, it allows to constrain internal mixing processes and potential previous mass transfer event for binary stars (even if the companion has disappeared). It may also help solving the mystery of the slowly rotating nitrogen-rich massive main sequence stars.
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
A new phenylboric acid derivative entrapped lipiodol (PBAD-lipiodol) was developed as a boron carrier for the boron neutron capture therapy (BNCT) of hepatoma in Taiwan. The biodistribution of both PBAD-lipiodol and BPA-fructose was assayed in GP7TB hepatoma-bearing rat model. The highest uptake of PBAD-lipiodol was found at 2 h post injection. The application of BNCT for the hepatoma treatment in tumor-bearing rats is suggested to be 2-4 h post PBAD-lipiodol injection.
The adsorption properties of four samples of the #alpha#-modification of boron nitride (#alpha#-BN) were investigated by the gas-chromatographic method. According to the electron microscopy data, the #alpha#-BN particles possess the shape of thin plates. An #alpha#-BN sample prepared from magnesium polyboride, is the most uniform adsorbent. For a series of n-alkanes, benzene, and alkyl benzenes, by testing the #alpha#-BN samples one has obtained the retained volumes (Henry constants) and the values of the differential adsorption heat, which are close to those of the surface zero filling. These thermodynamic characteristics of adsorption have shown that the #alpha#-BN, line the graphitized thermal carbon black, is not a specific adsorbent.
Throughout the 1990's to year 2000, energy integration, and particularly natural gas integration, was seen as a major goal in the southern cone of South America. The regional perspective for energy was related to an even more challenging objective - Latin American economic integration, which was quickly moving forward by the constitution of Mercosur, the free trade zone built by Argentina, Brazil, Uruguay and Paraguay, and also having Bolivia and Chile as special partners. Mercosur was getting stronger and becoming a successful political project. Trade conflicts existed, but they were considered normal and nobody would disagree about the viability of Mercosur. By the beginning of the 21. century, the economic integration process in South America was already advancing timidly as compared to the impetus from the beginning of 1990's. Mercosur started facing complex and almost insurmountable challenges after the numerous global financial crises ...
A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive ...
In-reactor testing of bolt-loaded compact tension specimens was performed in 360 C water to determine the irradiation-assisted stress corrosion cracking (IASCC) behavior of HTH Alloy X-750 and direct-aged Alloy 625. New data confirm previous results showing that high irradiation levels reduce SCC resistance in Alloy X-750. Heat-to-heat variability correlates with boron content, with low boron heats showing improved IASCC properties. Alloy 625 is resistant to IASCC, as no cracking was observed in any Alloy 625 specimens. Microstructural, microchemical and deformation studies were performed to characterize the mechanisms responsible for IASCC in Alloy X-750 and the lack of an effect in Alloy 625. The mechanisms under investigation are: boron transmutation effects, radiation-induced changes in microstructure and deformation characteristics, and radiation-induced segregation. Irradiation of Alloy X-750 caused significant ...
This book contains the abstracts of all the presentations made either in oral or poster form, at the VII International Symposium on Photosynthetic Prokaryotes.
Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial ...
Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials ...
Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant ...
Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare ...
Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...
The thermo-chemical treatments of steels with plasma is normally carried out in low-pressure ionized gaseous atmospheres. Among the treatments used most often are: nitruration, carburization and boronized. A plasma can also generate at atmospheric pressure. One way to produce it is with an electrochemical cell that works at a relatively high inter-electrode voltage and under conditions of heavy gas generation. This type of plasma is known as electrolytic plasma. This work studies the feasibility of using electrolytic plasma for the surface processing of steels. Two processes were selected: boronized and nitruration., for the hardening of two types of steel: one with low carbon (1020) and one with low alloy (4140). In the case of the nitruration, the 1020 steel was first aluminized. The electrolytes were aqueous solutions of borax for the boronizing and urea for the nitruration. The electrolytic plasmas were classified ...
Radiation portal monitors used for interdiction of illicit materials at borders include highly sensitive neutron detection systems. The main reason for having neutron detection capability is to detect fission neutrons from plutonium. The currently deployed radiation portal monitors (RPMs) from Ludlum and Science Applications International Corporation (SAIC) use neutron detectors based upon 3He-filled gas proportional counters, which are the most common large neutron detector. There is a declining supply of 3He in the world, and thus, methods to reduce the use of this gas in RPMs with minimal changes to the current system designs and sensitivity to cargo-borne neutrons are being investigated. Four technologies have been identified as being currently commercially available, potential alternative neutron detectors to replace the use of 3He in RPMs. These technologies are: 1) Boron trifluoride (BF3)-filled proportional counters, 2) Boron-lined ...
The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is ...
The article reports the reserves of fossil resources. The world's total coal reserves and recoverable coal reserves the estimated at 8,400 billion tons and 728 billion tons, respectively. For oil, the verified reserves and reserve production ratio in the Middle East are 420.9 billion bbl and about 100 years, respectively. They are 141 billion bbl and about 20 years for North and South America, 81 billion bbl and about 18 years for the Soviet Union, 10.8 billion bbl and 34 years for China, 9.8 billion bbl and 26 years for Western Europe and 38.7 billion bbl and 42 years for Africa. The total reserves of natural gas in the world were shown to be 3,981.6 x 10/sup 12/ cf at the World Petroleum Congress in 1987. The amount of recoverable primitive oil sand resources in the world is 436 billion bbl, of which as much as about 70 percent is in Canada. The amount of ultimate primitive oil shale resources is 3,281 billion bbl, of which 2,002.4 billion bbl is in ...