Single Molecule Source Reagents for CVD of Beta Silicon Carbide.
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...
1991-01-01
Energy Technology Data Exchange (ETDEWEB)
According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.
2001-01-01
"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."
2007-02-01
International Nuclear Information System (INIS)
Boron carbide is a high-technological ceramic material (it is used for lightweight armor, neutron absorbers, wear pieces, etc.). Hot pressing (2200"0C, 40 MPa, Ar atmosphere) and recently high isostatic pressing, are the best know ways for industrial preparation of boron carbide items. Pressureless sintering using metallic, inorganic, B+C, additives is not successful, since, despite having a high density, impurities remain present. Pressureless sintering of boron carbide (or silicon carbide composite) using free carbon addition, produced by in-situ pyrolysis of a Novolaque-type phenol-formaldehyde resin (#approx =# 9 wt%), is now possible in industry. A promising new method is the use of organic precursors, e.g. polycarbosilane with a small amount of phenolic resin, giving CSi and C by in-situ pyrolysis; the resulting boron carbide ceramics have high density ...
Effect of mineralizer on the nitridation of sialon-bonded silicon carbide products
International Nuclear Information System (INIS)
The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society
Performance of ceramics in ring/cylinder applications
Energy Technology Data Exchange (ETDEWEB)
In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.
1987-01-01
International Nuclear Information System (INIS)
#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).
British Library Electronic Table of Contents (United Kingdom)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
2011-01-01
Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure
International Nuclear Information System (INIS)
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
2011-07-07
British Library Electronic Table of Contents (United Kingdom)
Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Safety and environmental assessments have been made of conceptual fusion power plant designs employing silicon carbide composites (SiC/SiC) as the first wall and blanket structure material. These have used similar analysis methods to earlier studies of designs based on vanadium alloy or low-activation martensitic steel, allowing direct comparisons. The very low short-term activation of silicon carbide results in an almost insignificant level of decay heat in postulated loss of coolant accidents, and a lower {gamma}-dose rate on the timescale of relevance to handling for maintenance operations. However on the longer time-scale, of interest in possible recycling operations, decommissioning and waste management, SiC/SiC appears to perform no better than vanadium alloy or low-activation martensitic steel, due in part to the activation of impurities in a realistic composition. Furthermore, its increased ...
2001-04-01
Investigation of #alpha#-sialon formation by high temperature X-ray diffraction
International Nuclear Information System (INIS)
A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of ...
1993-10-04
Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
Energy Technology Data Exchange (ETDEWEB)
Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.
2008-01-15
Design and fabrication of an 1-MW(th) ceramic tube bench-model solar receiver
Energy Technology Data Exchange (ETDEWEB)
In 1976 the design and fabrication began of an 1 MWt Bench Model Solar Receiver (BMSR) to demonstrate and further develop the ceramic tube central receiver concept. Although many of the properties of silicon carbide are well documented, this material has never been utilized in an application of this type and size. Further investigation was undertaken to confirm the choice of silicon carbide against available metals and other ceramic materials. The BMSR is configured for testing at the Department of Energy's Central Receiver Test Facility in Albuquerque, New Mexico. Design and fabrication of the BMSR are highlighted in this report. Completion and testing of the BMSR are planned for the next phase of the project.
1982-05-01
Studies of dynamic contact of ceramics and alloys for advanced heat engines: Final report
Energy Technology Data Exchange (ETDEWEB)
In support of the efforts to apply ceramics in advanced heat engines, a study was made of the sliding performance of ceramics at the ring/cylinder interface of low heat rejection engines. The objective was to understand the basic mechanisms controlling the wear of candidate ceramics and thereby identify means for applying these ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and several plasma-sprayed ceramic coatings without lubrication were unsuccessful because of high friction and high wear rates. Experiments using a polyalphaolefin lubricant at temperatures to 260 C identified several combinations having wear rates in the general range likely to be acceptable for engines. Plasma-sprayed coatings of chromium oxide and hypersonic powder flame sprayed coatings of cobalt-bonded tungsten carbide performed particularly well as ring coatings. Similar ...
1988-03-01
Properties of ZnO thin films prepared by radio-frequency plasma beam assisted laser ablation
International Nuclear Information System (INIS)
Zinc oxide thin films were obtained by laser ablation of a Zn target in oxygen reactive atmosphere, the oxygen being supplied either by a standard gas inlet valve or from a radio-frequency (rf) oxygen plasma. Pt-coated silicon and MgO were used as substrates. The influence of the deposition parameters as laser wavelength (266, 355, 1064 nm), laser fluence (1.5-20 J/cm2) and oxygen pressure (1-60 Pa) was studied. The influence of the rf plasma beam addition on the morphological proprieties of zinc oxide films was particularly investigated, simultaneously with several configurations of the direction of the ablation plasma, the rf plasma beam and the substrate. The obtained films, with thicknesses in the range of 50 nm to 1 ?m have been characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM).
2005-07-15
High-temperature ceramic receivers
Energy Technology Data Exchange (ETDEWEB)
An advanced ceramic dome cavity receiver is discussed which heats pressurized gas to temperatures above 1800/sup 0/F (1000/sup 0/C) for use in solar Brayton power systems of the dispersed receiver/dish or central receiver type. Optical, heat transfer, structural, and ceramic material design aspects of the receiver are reported and the development and experimental demonstration of a high-temperature seal between the pressurized gas and the high-temperature silicon carbide dome material is described.
1980-01-01
Corrosion resistant coatings for silicon carbide heat exchanger tubes: Topical report
Energy Technology Data Exchange (ETDEWEB)
This heat exchanger is a critical step in the development of the Externally Fired Combined Cycle power system, a direct-coal combustion power plant (gas turbine). SiC is the only material with the needed resistance to creep, thermal shock, and oxidation; however a protective coating is needed. Ten candidate materials were identified: alumina-based materials, materials stable with SiO, and low expansion materials. An initial screening study should be performed.
1996-09-01
Ceramic dome receiver technology developments
Energy Technology Data Exchange (ETDEWEB)
The development and experimental demonstration of a high-temperature seal for the SHARE ceramic dome cavity receiver is reported. The mechanical contact seal which was tested on one-foot-diameter silicon-carbide ceramic-dome hardware at pressure differentials to four atmospheres and dome temperatures to 2200/sup 0/F (1200/sup 0/C) showed negligible leakage at expected receiver operating conditions. Potential solar receiver applications for the technology are illustrated.
1980-01-01
Material-induced shunts in multicrystalline silicon solar cells
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-15
Material-induced shunts in multicrystalline silicon solar cells
International Nuclear Information System (INIS)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-04-01
Material-induced shunts in multicrystalline silicon solar cells
British Library Electronic Table of Contents (United Kingdom)
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
2007-01-01
Development of a Commercial Process for the Production of Silicon Carbide Fibrils
Energy Technology Data Exchange (ETDEWEB)
The current work continues a project completed in 1999 by ReMaxCo Technologies in which a novel, microwave based, VLS Silicon Carbide Fibrils concept was verified. This project continues the process development of a pilot scale commercial reactor. Success will lead to sufficient quantities of fibrils to expand work by ORNL and others on heat exchanger tube development. A semicontinuous, microwave heated, vacuum reactor was designed, fabricated and tested in these experiments. Cylindrical aluminum oxide reaction boats are coated, on the inner surface, with a catalyst and placed into the reactor under a light vacuum. A series of reaction boats are then moved, one at a time, through the reactor. Each boat is first preheated with resistance heaters to 850 C to 900 C. Each reaction boat is then moved, in turn, to the microwave heated section. The catalyst is heated to the required temperature of 1200 C to 1300 C while a mixture of MTS (methyl ...
2003-04-22
XPS/AES Study of Electrical and Chemical Properties of Pd/SiC Interface
Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of ...
1997-11-01
Corrosion resistant coatings for silicon carbide heat exchanger tubes -- Volume 3. Final report
Energy Technology Data Exchange (ETDEWEB)
The development of a silicon carbide (SiC) heat exchanger is a critical step in the development of the Externally-Fired Combined Cycle (EFCC) power system. SiC is the only material that provides the necessary combination of resistance to creep, thermal shock, and oxidation. While the SiC structure materials provide the thermomechanical and thermophysical properties needed for an efficient system, the mechanical properties of the SiC tubes are severely degraded through corrosion by the coal combustion products. To obtain the necessary service life of thousands of hours at temperature, a protective coating is needed that is stable with both the SiC tube and the coal combustion products, resists erosion from the particle laden gas stream, is thermal shock resistant, adheres to SiC during repeated thermal shocks (start-up, process upsets, shut-down), and allows the EFCC system to be cost competitive. This demanding set of technical performance and ...
1996-06-07
New materials to manufacture casting molds
International Nuclear Information System (INIS)
A report is given on an improved filler-binder mixing method in the manufacture of artificial graphite, the so-called coat-mix process. The individual graphite-filler grains are coated completely with uniform binder coatings (phenol formaldehyde resin) in a continuous process. Methanol is used as solvent for the resin. In a modified further development of the process, the use of organic solvents can be disregarded by dissolving the binder resin in caustic soda and injecting the slurry into water diluted acid. The manufacture of casting molds from coat-mix powders, their properties and industrial application are given. Finally, the advantages of using carbon bodies of coal-mix material for conversion to silicon carbide are indicated. (IHOE).
Fuel elements and safety engineering goals
International Nuclear Information System (INIS)
There are good prospects for silicon carbide anti-corrosion coatings on fuel elements to be realised, which opens up the chance to reduce the safety engineering requirements to the suitable design and safe performance of the ceramic fuel element. Another possibility offered is combined-cycle operation with high efficiencies, and thus good economic prospects, as with this design concept combining gas and steam turbines, air ingress due to turbine malfunction is an incident that can be managed by the system. This development will allow economically efficient operation also of nuclear power reactors with relatively small output, and hence contribute to reducing CO_2 emissions. (orig./DG).
Determination of uranium and thorium concentrations in integrated circuit packaging materials
International Nuclear Information System (INIS)
The purpose of the present research is to find a suitable technique to measure trace amounts of uranium and thorium and to determine the surface #alpha#-flux in silicon compound (SiO) used for fabrication of integrated circuit packaging materials. Among several commonly-used detecting techniques, it was found that neutron activation analysis (NAA) was most promising. The results from NAA show a large difference in uranium and thorium concentrations when cadmium and boron carbide shields are used, whereas #alpha#-flux measurements show a low #alpha#-activity, which corresponds to the trace amounts of uranium and thorium expected to be present in these materials. (author) 13 refs.; 6 figs.
THE INFLUENCE OF GRAIN BOUNDARY CARBIDE ...
... Title : THE INFLUENCE OF GRAIN BOUNDARY CARBIDE DENSITY ON THE BRITTLE FRACTURE OF FERRITE PEARLITE STEELS. ...
The compatibility of alloy 800 in HTR atmospheres
International Nuclear Information System (INIS)
A thermodynamic analysis of the behaviour of Alloy 800 in helium based atmospheres relevant to the High Temperature Gas Cooled Reactor indicates that, depending upon the precise gas composition, oxidation and carburisation, or carburisation alone may be expected. The prime influence appears to be the moisture level. The morphology and structure of the reaction products are discussed. It is shown that the 'reactive' elements chromium, manganese, titanium and silicon are concentrated in the oxide scale which is normally duplex in structure. Aluminium oxide is formed at grain boundaries and in an internal oxidation zone together with titanium and sometimes silicon. In carburising conditions, mixed titanium-chromium carbides are formed. When this occurs, intergranular penetration is maximised. Weight gain data are assessed and briefly described and a tentative model for the mechanism of corrosion of Alloy 800 in HTR helium is ...
New synthesis routes for Sialon and Sialon-bonded ceramics
International Nuclear Information System (INIS)
The use of Sialon ceramics has been restricted by the high temperature required for synthesis and the expense of the pure oxide and nitride raw materials required. For refractory applications the purity required is less demanding and it has been possible to exploit the outstanding durability of the Sialons at moderate cost. New low cost manufacturing routes are being developed by nitriding silicon metal powder at relatively low temperature with clay and various additives depending on the Sialon required. For example the introduction of carbon or fine silicon carbide allows the preparation of beta Sialons and alpha Sialons which can be stabilised by including the appropriate cations. A wide range of composite Sialon bodies with diverse properties can be prepared by a one step process. Current projects developing the synthesis routes are aimed, in the first instance, at refractory manufacture but are showing promise for more ...
1998-09-28
Investigation of weld cracking in alloy 800
Energy Technology Data Exchange (ETDEWEB)
The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid which solidifies last on the fracture ...
1984-03-01
Energy Technology Data Exchange (ETDEWEB)
In this work we present an ultra-low temperature method for the oxidation of an amorphous silicon-carbide-nitride (SiCN) material. The SiCN is deposited on silicon substrates by plasma enhanced chemical vapor deposition using CH{sub 4}, SiH{sub 4}, and N{sub 2} chemistry. The physical and chemical properties are characterized for the as-deposited SiCN and post-oxidized films are discussed. The SiCN film is exposed to oxygen plasma, where it undergoes a chemical transformation into a binary SiO{sub 2} material system. A 1.7 nm/min oxidation rate is typical for this process and compares favorably to oxidation methods utilizing much higher temperatures. The substrate temperature remains extremely low throughout the oxidation process, T{sub s} < 200 deg. C. Changes in film stress, optical constants, film thickness, surface roughness, and film density are measured. Chemical analysis by X-ray photoelectron spectroscopy is reported for both the ...
2008-01-30
Electrophysiological Study and Catheter Ablation with 3D Mapping
... see and electrophysiological study and catheter ablation with 3D mapping. During the procedure, doctors look at the ... perform a electrophysiology study with ablation, using our 3D mapping system. Keep in mind, that during the ...
Influence of Fiber Loading on Thermal Ablation of PTFE,
... Accession Number : ADD431225. Title : Influence of Fiber Loading on Thermal Ablation of PTFE,. Corporate Author : Personal Author(s) : Letson,KN. ...
1979-07-16
Energy Technology Data Exchange (ETDEWEB)
Preliminary studies were preformed to determine whether thermal conductivity of cementitious grouts used to backfill heat exchanger loops for geothermal heat pumps could be improved, thus improving efficiency. Grouts containing selected additives were compares with conventional bentonite and cement grouts. Significant enhancement of grout alumina grit, steel fibers, and silicon carbide increased the thermal conductivity when compared to unfilled, high solids bentonite grouts and conventional cement grouts. Furthermore, the developed grouts retained high thermal conductivity in the dry state, where as conventional bentonite and cement grouts tend to act as insulators if moisture is lost. The cementitious grouts studied can be mixed and placed using conventional grouting equipment.
1996-06-01
Novel Processing of Unique Ceramic-Based Nuclear Materials and Fuels
Energy Technology Data Exchange (ETDEWEB)
Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These include refractory alloys base on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as those based on silicon carbide (SiCf-SiC); carbon-carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor componets is necessary for improved efficiency. Improving thermal conductivity of the materials used in nuclear fuels and other temperature critical components can lower the center-line fuel temperature and thereby enhance durability and reduce the risk of premature failure.
2008-11-30
Intermediate Strain-Rate Loading Experiments - Technique and Applications to Ceramics
Energy Technology Data Exchange (ETDEWEB)
A new test methodology is described which allows access to loading rates that lie between split Hopkinson bar and shock-loading techniques. Gas gun experiments combined with velocity interferometry techniques have been used to experimentally determine the intermediate strain-rate loading behavior of Coors AD995 alumina and Cercom silicon-carbide rods. Graded-density materials have been used as impactors; thereby eliminating the tension states generated by the radial stress components during the loading phase. Results of these experiments demonstrate that the time-dependent stress pulse generated during impact allows an efficient transition from the initial uniaxial strain loading to a uniaxial stress state as the stress pulse propagates through the rod. This allows access to intermediate loading rates over 5 x 10{sup 3}/s to a few times 10{sup 4}/s.
1999-08-16
Influence of SiC addition on tribological properties of SiAlON
British Library Electronic Table of Contents (United Kingdom)
The tribological properties of gas pressure sintered SiAlON and its composite with 18wt% silicon carbide (SiC) against two different mating materials, i.e., alumina and SiAlON are evaluated. SiAlON and SiAlON-18%SiC composite ceramics were prepared by pressure less sintering and gas pressure sintering. Fretting wear tests were carried out under dry unlubricated ambient conditions (room temperature 23-25^oC; relative humidity 50-55%) with a load of 8N for 45,000 cycles. Friction and wear properties of SiAlON-SiC proved better than the monolithic SiAlON. The formation of silica roll like structure on the composite worn surface was observed.
2011-01-01
US Army workshop on low-heat-rejection engines (4th). Sessions report for 29-31 March 1989
Energy Technology Data Exchange (ETDEWEB)
There are a number of characteristics exhibited by ceramic materials that may provide potential benefits for the reciprocating internal combustion engine. However, the brittle nature of these materials together with a variability in strength has created difficulties in applying ceramic materials to the engine environment. Although a wide range of physical properties is available from contemporary ceramic materials, a material offering consistently high strength has yet to be developed. For sliding-contact applications, desirable characteristics include good wear resistance, low friction, ability to join metals and good heat dissipation. Test results have shown that cam/follower components with cast iron cam sliding on a silicon nitride follower exhibit very low wear rates. The application of silicon carbide to face seals has also shown substantial reductions in both friction and wear when compared with conventional ...
1989-03-31
International Nuclear Information System (INIS)
Buried silicon carbide (SiC) microstructures with lateral dimensions in the #mu#m range were formed by high-dose projection of 1.5 MeV C"2"+ ions in Si(100) at different doses and temperatures and subsequent annealing for 10 h at 1250 deg. C. Sections of individual SiC microstructures were prepared for cross-sectional transmission electron microscopy (TEM) analysis using a focused ion beam (FIB). Besides the possibility to select an individual microstructure, the FIB technique has the advantage of producing specimen foils of uniform thickness. Therefore, it was possible to map the carbon concentration of microstructures by energy filtered TEM (EFTEM) using the C_K absorption edge without the need of any sample thickness correction. Local overstoichiometric (>50%) carbon concentrations are shown to be correlated to the formation of an amorphous phase in the SiC and to significant swelling visible at the Si wafer surface 2 #mu#m above.
2003-09-15
Degradation of materials under conditions of the sulphur-iodine thermochemical cycle
Energy Technology Data Exchange (ETDEWEB)
The need for a hydrogen economy is driven by increasing fuel prices, depleting oil reserves and uncertainty over supplies, and concerns about global warming and environmental pollution. Alternative methods to portable energy sources such as fossil fuels are being developed that are more efficient and carbon-emission-neutral. A prospective method is to produce hydrogen as an energy carrier. This paper presented a study on the degradation of materials under conditions of the sulphur-iodine (SI) thermochemical cycle. The paper provided background information on the study and presented a schematic of the SI cycle. A literature review was presented along with materials selected, such as refractory metals, reactive metals, superalloys, glassy metals, ceramics, cermets, polymers, composites, and coatings. The experimental method was then described. A capsule method was developed to rapidly quantify the decomposition rate of the candidate materials under the target conditions of temperature, ...
2009-07-01
... the pulmonary vein and because there's a gap, electricity is going across the ablation line and capturing ...
... 2009) Arrhythmia Electrophysiological Study and Catheter Ablation with 3D Mapping (Mercy Hospital, Miami, FL, 11/15/2007) ...
FIBROUS MONOLITH WEAR RESISTANT COMPONENTS FOR THE MINING INDUSTRY
Energy Technology Data Exchange (ETDEWEB)
A set of materials property data for potential wear resistant materials was collected. These materials are designated for use as the ''core'' materials in the Fibrous Monolith structure. The material properties of hardness, toughness, thermal conductivity and cost were selected as determining factors for material choice. Data for these four properties were normalized, and weighting factors were assigned for each property to establish priority and evaluate the effects of priority fluctuation. Materials were then given a score based on the normalized parameters and weighting values. Using the initial estimates for parameter priority, the highest ranking material was tungsten carbide, with diamond as the second ranked material. Several materials were included in the trade study, and five were selected as promising ''core'' materials to include in this effort. These materials are tungsten ...
2001-08-15
International Nuclear Information System (INIS)
Plasma immersion ion implantation (PIII) is an effective materials modification and synthesis technique but has seldom been applied to ceramic materials due to the high electrical resistance that reduces the ion bombardment energy and sometimes causes serious electrical arcing in the instrument. Even in cases where PIII is applicable, the surface properties of the implanted insulating materials can be seriously affected due to the low ion energy and materials damage from electrical arcing. In order to enhance the surface and mechanical properties such as wear resistance of ceramic materials used in many industrial applications, surface modification is needed. In this work, we conduct carbon implantation into sintered #alpha#-SiC (silicon carbides that are widely used in vacuum ceramic bearings) using mesh-assisted plasma immersion ion implantation to enhance the surface properties. The use of a conducting grid is necessitated by the high ...
2004-03-01
Correlating microstructure and thermal transport of irradiated SiC
International Nuclear Information System (INIS)
Full text of publication follows: The effect of neutron irradiation on the thermal conductivity of silicon carbide can be dramatic depending on the irradiation temperature and fluence the material is subjected to, and may be a critical factor defining it's use in fusion systems. Historically there have been several papers describing the effect of neutron irradiation on thermal conductivity degradation of SiC, predominately in the low to intermediate temperature ranges. Practically all of this work has been at temperatures lower than the application temperature for SiC being considered by the conceptual fusion reactors. This paper provides new data on the thermal conductivity of high quality CVD silicon carbide irradiated in a range of doses and temperature spanning the proposed fusion reactor temperature range. Specifically, an irradiation was carried out from fractions milli-dpa to approximately 8 dpa ...
2007-12-10
British Library Electronic Table of Contents (United Kingdom)
Superstrong shock waves of multimegabar level generated during ablation of an aluminum surface by intense (<1 PW/cm2) femtosecond laser pulses have been detected by observing the propagation of a shock wave in air from the ablated surface to a broadband piezoelectric receiver. The estimated initial pressure and velocity of the shock wave (ablation plume) agree well with data obtained earlier by various methods for shock waves propagating inside ablated targets.
2011-01-01
Structural transformations in Sc/Si multilayers irradiated by EUVlasers
Energy Technology Data Exchange (ETDEWEB)
Multilayer mirrors for the extreme ultraviolet (EUV) are keyelements for numerous applications of coherent EUV sources such as newtabletop lasers and free-electron lasers. However the field ofapplications is limited by the radiation and thermal stability of themultilayers. Taking into account the growing power of EUV sources thestability of the optics becomes crucial. To overcome this problem it isnecessary to study the degradation of multilayers and try to increasetheir temporal and thermal stability. In this paper we report the resultsof detailed study of structural changes in Sc/Simultilayers when exposedto intense EUV laser pulses. Various types of surface damage such asmelting, boiling, shockwave creation and ablation were observed asirradiation fluencies increase. Cross-sectional TEM study revealed thatthe layer structure was completely destroyed in the upper part ofmultilayer, but still survived below. The layers adjacent tothe substrateremained intact even ...
2007-08-21
Delayed Development of Pneumothorax After Pulmonary Radiofrequency Ablation
International Nuclear Information System (INIS)
Acute pneumothorax is a frequent complication after percutaneous pulmonary radiofrequency (RF) ablation. In this study we present three cases showing delayed development of pneumothorax after pulmonary RF ablation in 34 patients. Our purpose is to draw attention to this delayed complication and to propose a possible approach to avoid this major complication. These three cases occurred subsequent to 44 CT-guided pulmonary RF ablation procedures (6.8%) using either internally cooled or multitined expandable RF electrodes. In two patients, the pneumothorax, being initially absent at the end of the intervention, developed without symptoms. One of these patients required chest drain placement 32 h after RF ablation, and in the second patient therapy remained conservative. In the third patient, a slight pneumothorax at the end of the intervention gradually increased and led into tension pneumothorax 5 days ...
2009-05-01
Limitations of silicon devices for quantum computing
Energy Technology Data Exchange (ETDEWEB)
There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)
2004-04-28
UK PubMed Central (United Kingdom)
BackgroundRadiofrequency ablation (RFA) of tumors by means of internally cooled electrodes (ICE) combined with interstitial infusion of saline may improve clinical results. To date,...Full Text Available
UK PubMed Central (United Kingdom)
Percutaneous radiofrequency ablation is the treatment of choice for osteoid osteoma of the appendicular skeleton. However, difficulties in localizing the lesion in the spine and its proximity to neural...Full Text Available
2009-03-01
Catheter Ablation for Paroxysmal Atrial Fibrillation
... catheter ablation for paroxysmal atrial fibrillation procedure utilizing 3-D mapping and rotational intracardiac echocardiography. This program is ... of the MRI scan and then there's the 3-D image, which is generated from the pixels chosen ...
Cardiovascular magnetic resonance guided electrophysiology studies
UK PubMed Central (United Kingdom)
Catheter ablation is a first line treatment for many cardiac arrhythmias and is generally performed under x-ray fluoroscopy guidance. However, current techniques for ablating complex arrhythmias such...Full Text Available
Energy Technology Data Exchange (ETDEWEB)
This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ ...
1994-12-31
Reclaiming silver from silver zeolite
Energy Technology Data Exchange (ETDEWEB)
Silver zeolite is used to capture radioiodines from air cleaning systems in some nuclear facilities at the Idaho National Engineering Laboratory. It may become radioactively contaminated and/or poisoned by hydrocarbon vapors, which diminishes its capacity for iodine. Silver zeolite contains up to 38 wt% silver. A pyrometallurgical process was developed to reclaim the silver before disposing of the unserviceable zeolite as a radioactive waste. A flux was formulated to convert the refractory aluminosilicate zeolite structure into a low-melting fluid slag, with Na{sub 2}O added as NAOH instead of Na{sub 2}CO{sub 3} to avoid severe foaming due to CO{sub 2} evolution. A propane-fired furnace was built to smelt 45 kg charges at 1300C in a carbon-bonded silicon carbide crucible. A total of 218 kg (7000 tr oz) of silver was reclaimed from 1050 kg of unserviceable zeolite. Silver recoveries of 97% were achieved, and the radioisotopes were fixed as ...
1991-10-01
Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams
International Nuclear Information System (INIS)
Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) H"+ and He"+ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams. (author)
2011-07-01
Doping of silicon carbide by ion implantation
Energy Technology Data Exchange (ETDEWEB)
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed. (orig.)
2001-07-01
Displacement damage cross sections for neutron-irradiated silicon carbide
International Nuclear Information System (INIS)
Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion materials, as well as the ...
2002-12-01
Displacement Damage Cross Sections for Neutron-irradiated Silicon Carbide
Energy Technology Data Exchange (ETDEWEB)
Displacements per atom (DPA) is a widely used damage unit for displacement damage in nuclear materials. Calculating the DPA for SiC irradiated in a particular facility requires a knowledge of the neutron spectrum as well as specific information about displacement damage in that material. In recent years significant improvements in displacement damage information for SiC have been generated, especially the energy required to displace an atom in an irradiation event and the models used to describe electronic and nuclear stopping. Using this information, numerical solutions for the displacement functions in SiC have been determined from coupled integro-differential equations for displacements in polyatomic materials and applied in calculations of spectral-averaged displacement cross sections for SiC. This procedure has been used to generate spectrally averaged displacement cross sections for SiC in a number of reactors used for radiation damage testing of fusion materials, as well as the ...
2002-12-01
Aluminum-containing intergranular phases in hot-pressed silicon carbide
Energy Technology Data Exchange (ETDEWEB)
Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is to be included in this phase diagram.
2003-01-12
Carbide transformations in a gamma/gamma-prime nickel alloy during prolonged aging
Energy Technology Data Exchange (ETDEWEB)
Carbide reactions occurring in a precipitation-hardening gamma/gamma-prime Ni-Cr alloy during prolonged high-temperature aging are investigated experimentally. It is found that the decomposition of primary MC carbides, which is accompanied by the precipitation of M23C6 particles, may lead to void nucleation and growth. The effect of carbide transformations on the residual properties of the material at temperatures above the equicohesion temperature is observed at the late stages of aging only. 6 references.
1988-08-01
Transluminal radio-frequency thermal ablation using a stent-type electrode: an experimental study
Energy Technology Data Exchange (ETDEWEB)
To assess the feasibility of transluminal radiofrequency thermal ablation using a stent-type electrode and to determine, by means of in-vivo and in-vivo animal studies, the appropriate parameters. In-vivo: the radiofrequency electrode used was a self-expandable nitinol stent with 1cm insulated ends. A stent was placed in the portal vein of bovine liver, and ablations at target temperatures of 70, 80, 90, and 100 .deg. C were performed. Ablated sizes were measured longitudinally. In vivo: four mongrel dogs were anesthetized, and a stent was inserted in the common bile duct under fluoroscopic guidance through an ultrasound-guided gall bladder puncture site. The ablation temperature was set at 80 .deg. C, and each dog underwent proximal and distal esophageal ablations lasting 12 minutes. They were sacrificed immediately. In-vivo: ablated sizes showed significant ...
2003-06-01
Microfabricated polyester conical microwells for cell culture applications.
Over the past few years there has been a great deal of interest in reducing experimental systems to a lab-on-a-chip scale. There has been particular interest in conducting high-throughput screening studies using microscale devices, for example in stem cell research. Microwells have emerged as the structure of choice for such tests. Most manufacturing approaches for microwell fabrication are based on photolithography, soft lithography, and etching. However, some of these approaches require extensive equipment, lengthy fabrication process, and modifications to the existing microwell patterns are costly. Here we show a convenient, fast, and low-cost method for fabricating microwells for cell culture applications by laser ablation of a polyester film coated with silicone glue. Microwell diameter was controlled by adjusting the laser power and speed, and the well depth by stacking several layers of film. By using this setup, a device containing ...
2011-05-26
CORROSION RESISTANCE OF CHROMIUM CARBIDE-BASE ...
... FIELD CORROSION TESTS WERE MADE DURING THE VOYAGES OF THE SCIENTIFIC-RESEARCH SHIPS ACADEMICIAN VERNADSKII AND ...
Search Results - NASA Technical Reports Server
The influence of ablation on stagnation region convective heating for ... and thermal properties of this fiber depend on the fluorination process ... However, these properties are between those of graphite and those of PTFE (Teflon). ...
:z:..... \\ - NASA Technical Report Server (NTRS)
A common reinforced liner material is a cloth formed of PTFE fibers and fiber of ... and ablation protection provided. All of these methods of thermal ..... The influence of fiber content on the microstructures of the composites is ...
8 - NASA Technical Reports Server
The influence of ablation on stagnation region convective heating for ... and thermal properties of this fiber depend on the fluorination process ... However, these properties are between those of graphite and those of PTFE (Teflon). ...
120-MM Gun Tube Erosion Including Surface Chemistry ...
... with dynamic gridding capability to account for material ablation, as well as the addition of energy sources and heat transfer augmentation due to ...
1997-10-01
/ /tLc - NASA Technical Reports Server
Inertial navigation error propagation. Hypersonic entry guidance techniques. Ablation effects on hypersonic aero-. Primary navigation and guidance ...
Electron-beam cladding of wear-resistant composite coatings on the base of titanium carbide
International Nuclear Information System (INIS)
The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness
Development of SiC-AlN and SiC-SiAlON refractory composites
International Nuclear Information System (INIS)
SiC-AlN and SiC-SiAlON refractory composites were obtained by means of nitridation of the mixtures of silicon carbide (SiC) powder with a broad granulometric distribution and powders of aluminium (Al) and aluminium-silicon (Al-Si) mixtures. The mixtures of the composition Al-25% Si, Al-50% Si and Al-75% Si were previously prepared by means of 'mechanical alloying' technique. Thermodynamic analysis was accomplished in order to evaluate the viability of SiC-SiAlON and SiC-AlN refractories production by the chosen processing method, and the results confirmed viability of such. Investigation of nitridation of Al and Al-Si powder compacts in order to obtain the AlN and #beta#-SiAlON matrix phases of the composite was accomplished by means of differential thermal analysis (DTA) and thermogravimetric analysis (TG). The results of the thermal analysis show that nitridation of the Al-25% Si, Al-50% Si and Al-75% Si resulting in ...
UK PubMed Central (United Kingdom)
Objectives: To report six month outcome in patients undergoing their first pulmonary vein ablation procedure for idiopathic atrial fibrillation (AF) at a “non-pioneering”...Full Text Available
2005-01-01
Method of defining features on materials with a femtosecond laser
Energy Technology Data Exchange (ETDEWEB)
The invention relates to a pulsed laser ablation method of metals and/or dielectric films from the surface of a wafer, printed circuit board or a hybrid substrate. By utilizing a high-energy ultra-short pulses of laser light, such a method can be used to manufacture electronic circuits and/or electro-mechanical assemblies without affecting the material adjacent to the ablation zone.
2006-05-23
Formation of nano-sized particles of a solid electrolyte by laser ablation
Energy Technology Data Exchange (ETDEWEB)
Nano-sized particles of a lithium ion conductive solid electrolyte, LiTi{sub 2}(PO{sub 4}){sub 3}, were prepared by laser ablation. The obtained particles were ca. 10nm in diameter. X-ray powder diffraction and Raman spectroscopy showed that they were amorphous with local structure similar to the crystalline counterpart. They were crystallized by the heating at ca. 630{sup o}C. (author)
2005-08-26
International Nuclear Information System (INIS)
Efficient and precise ablation of soft tissue is needed for non-invasive dermatological and corneal surgeries. Previous research has revealed that smooth and efficient cutting of certain soft tissues and gelatin is possible using a Free Electron Laser (FEL) with a wavelength of #lambda#=6.45 #mu#m, tuned to the amide-II band of protein. Gelatin ablation experiments have been carried out using a mid-infrared FEL within the waveband #lambda#=5.6-6.7 #mu#m by changing the primary absorbers such as water (#lambda#=6.1 #mu#m) and protein (#lambda#=6.45 #mu#m). The gelatin with 80 wt% water was efficiently ablated by FEL irradiation with the waveband #lambda#=#approx#5.95-6.19 #mu#m. On the other hand, using irradiation within #lambda#=#approx#6.4-6.6 #mu#m, many small bubbles were observed in the irradiated volume, and the gelatin was not ablated but significantly melted. Thus, it was found that the most ...
2003-07-11
A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.
1979-01-01
The role of 3D Helical CT in the reconstructive treatment of maxillofacial cancers
International Nuclear Information System (INIS)
Purpose of this work is to investigate the role of Helical CT and the usefulness of three-dimensional (3D) imaging for pre-operative planning and follow-up of reconstructive maxillofacial surgery with alloplastic material in neoplastic disease involving this region. From 1996 to 1999 eleven patients were examined with Helical CT and 3D images for planning of maxillofacial plastic and reconstructive surgery for advanced cancer of this anatomically complex region. A 3D-modulated titanium mesh (100%) or micro nets was used to rebuild the anterior surface of maxillary bone and the orbital floor. The mesh was cut to the appropriate size and shape and curved where necessary. Within the residual sinusal cavity a siliconed filling was used surmounting an acrylic prosthesis with dental arch to rebuild the palate. A rehydrated bovine pericardium was affixed and moduled on the borders in two cases only. Three-dimensionally reconstructed CT images were obtained preoperatively ...
2000-12-01
International Science & Technology Center (ISTC)
The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.
The effect of precipitated carbides on the pitting corrosion of 304 stainless steel
International Nuclear Information System (INIS)
In order to investigate the relation between the pitting corrosion and precipitated carbides, the heat treatment of specimens was carried out in two ways: Solution treatment and carbides precipitation treatment. The experiment was focused on the polarization curves of specimens immersed in HCL solution and on the microscopic analysis of the corroded specimens through a potentiodynamic method. It was found out that the intergranular and pitting corrosion occurred remarkably in 0.1N and 1N KCL solution when carbides were precipitated around the grain boundary of the 304 stain steel. The intergranular corrosion was noticed in the region of passivation and the pitting was prominent in the region of passivation break-down. The distribution of pits on the solution treated 304 stainless steel was random, while that of pits on carbides precipitated specimen was concentrated around the grain boundary in 0.1N and ...
Joining of boron carbide using nickel interlayer
International Nuclear Information System (INIS)
Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by ...
Microstructure of spray converted nanostructured tungsten carbide-cobalt composite
Energy Technology Data Exchange (ETDEWEB)
This paper reports the presence of face centered cubic cobalt precipitates inside tungsten carbide in nanocomposite of WC-Co synthesized by spray conversion processing. EDS was used to identify the presence and micro-diffraction was employed to determine the nature of the precipitates. There is entrapment of cobalt in tungsten carbide during the spray conversion process used to form WC/Co powder. During consolidation, at high temperatures, the cobalt attains enough mobility to precipitate inside WC. A vanadium containing compound was seen at the interfaces in samples which incorporated VC as a grain growth inhibitor. (orig.)
1996-05-01
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the nanoparticle formation during laser ablation of metals by short (of a few tens of ps) laser pulses strongly depends on the concentration of surrounding gas. While, at vacuum conditions, nanoparticle formation shows very ''sharp'' atomic force microscope images of aggregated clusters, following with clear appearance of plasmon resonance on the absorption spectra of deposited films, an addition of gas particles starts to decrease the probability of cluster formation. This process shows a threshold for both helium (33 torr) and xenon (12 torr) above which no surface plasmon resonance and correspondingly no observable nanoparticles on the deposited surfaces were detected. The destruction of nanoparticle formation was attributed to the negative influence of surrounding gas particles on ablated particles aggregation. (orig.)
2010-07-15
Simulation study on retention and reflection from tungsten carbide under high fluence of helium ions
Energy Technology Data Exchange (ETDEWEB)
We have studied, by a Monte Carlo simulation code ACAT-DIFFUSE, the fluence-dependence of the amount of retained helium atoms in tungsten carbide at room temperature under helium ion bombardment. The retention behavior may be understood qualitatively in terms of irradiation-dependent diffusion coefficient assumed and range. The emission processes from tungsten carbide under helium ion irradiation derived were compared with each other. We have discussed the retention curves for incident energy of 5 keV at incident angles of 0deg and 80deg and of 500 eV at 0deg. The energy spectra of helium atoms reflected from tungsten carbide for incident energy of 500 eV at 0deg and 80deg were compared with those from graphite and tungsten. (author)
2000-08-01
SECOND QUARTERLY REPORT DEVELOPMENT OF SECONDARY - NASA Technical ...
cellulose casing material made by Food Products Division,. Union Carbide Corporation. tion of the anode from oxygen generated at the charging electrode. ...
OAK RIDGE NATIONAL LABORATORY UNION CARBIDE CORPORATION NUCLEAR ...
W. Wayne Scott, Chattanooga State Technical Institute, 4501 Amnico Highway,. Chattanooga, Tennessee 3401. Robert L. Seale, University of Arizona, Tuscon, ...
Molten Boron Phase-Change Thermal Energy Storage ...
... Advanced thermal storage systems based on very high temperature solid materials such as boron carbide or graphite have been investigated for ...
2011-06-01
Crystal Chemistry of Ceramic/Mineral Systems
... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...
1992-12-08
Radiofrequency ablation of lung and liver lesions using CT fluoroscopy
International Nuclear Information System (INIS)
Full text: Tumour ablation with radiofrequency (RF) energy is a relatively new procedure for the treatment of focal malignant disease. At our institution this is currently being used in the treatment of certain liver and lung lesions with the patients involved being enrolled in clinical trials. The poster describes the technique used at our institution for the placement of the radiofrequency ablation electrode using CT fluoroscopy. Criteria for patient selection are included. Complications from the procedure are described, as well as follow up appearances and results. Our results from the treatment of primary and secondary lesions in the liver correlate well with published literature. Treatment is still not as successful as surgical resection but there is significantly less morbidity. Where this method may be appropriate is when the patient is not a candidate for surgical resection. The treatment of colorectal metastases in the lung shows early ...
2002-06-01
UK PubMed Central (United Kingdom)
BackgroundHeterogeneous results for research investigating health-related quality of life (HRQL) in patients undergoing sphincter-ablating procedures for rectal cancer...Full Text Available
2010-08-01
Prognostic determinants for survival after resection/ablation of a large hepatocellular carcinoma
UK PubMed Central (United Kingdom)
Background:Liver resection of large hepatocellular carcinomas (HCC), measuring at least 10 cm remains a controversial debate. Multiple studies on HCCs treated with surgical resection...Full Text Available
2009-06-01
Micropatterned polysaccharide surfaces via laser ablation for cell guidance
Energy Technology Data Exchange (ETDEWEB)
Micropatterned materials were obtained by a controlled laser ablation of a photoimmobilised homogeneous layer of hyaluronic acid (Hyal) and its sulphated derivative (HyalS). The photoimmobilisation was performed by coating the polysaccharide, adequately functionalised with a photoreactive group, on aminosilanised glass substrate and immobilising it on the surface under UV light. Hyal or HyalS photoimmobilised samples were then subjected to laser ablation with wavelengths in the UV regions in order to drill the pattern. Four different patterns with stripes of 100, 50, 25 and 10 {mu}m were generated. A chemical characterisation by attenuated total reflection/Fourier transform infrared (ATR/FT-IR) and time of flight-secondary ions mass spectrometry (TOF-SIMS) confirmed the success of the laser ablation procedure and the presence of alternating stripes of polysaccharide and native glass. The exact dimensions of the stripes were ...
2003-03-03
Metal stenting to resolve post-photodynamic therapy stricture in early esophageal cancer
UK PubMed Central (United Kingdom)
Photodynamic therapy (PDT) is an established endoscopic technique for ablating Barrett’s esophagus with high-grade dysplasia or early-stage intraepithelial neoplasia. The most common clinically...Full Text Available
2011-03-14
UK PubMed Central (United Kingdom)
Cigarette smoke (CS) induces recruitment of inflammatory cells in the lungs leading to the generation of reactive oxygen species (ROS), which are involved in lung inflammation and injury. Nicotinamide...Full Text Available
2008-05-01
UK PubMed Central (United Kingdom)
The murine cytomegalovirus (MCMV) M33 gene is conserved among all betaherpesviruses and encodes a homologue of seven-transmembrane receptors (7TMR) with the capacity for constitutive signaling. Previous...Full Text Available
2008-02-01
Androgens and spermatogenesis: lessons from transgenic mouse models
UK PubMed Central (United Kingdom)
Transgenic mouse models have contributed considerably to our understanding of the cellular and molecular mechanisms by which androgens control spermatogenesis. Cell-selective ablation of the androgen...Full Text Available
2010-05-27
UK PubMed Central (United Kingdom)
BackgroundThere are various treatment options for congenital melanocytic nevus (CMN), including surgical excision, dermabrasions, curettage, laser treatment, chemical peels and cryosurgery....Full Text Available
2009-05-01
'TT ( \\\\ b - NASA Technical Report Server (NTRS)
Inertial navigation error propagation. 153. 100. --. 8. GN-5. Hypersonic entry guidance techniques. 150. 100. 0.8. 9. FM-13. Ablation effects on hypersonic ...
sup 131 I treatment of thyroid papillary carcinoma in a patient with renal failure
Energy Technology Data Exchange (ETDEWEB)
Procedures for {sup 131}I ablation in renal failure are not known. In one patient receiving dialysis, detailed dosimetry and health safety aspects were obtained. The results showed insignificant contamination of equipment, but a surprisingly significant reduction in biologic half-life of {sup 131}I due to efficient dialysis extraction. The data indicate that {sup 131}I ablation can be done safely and easily during dialysis but that much higher {sup 131}I doses must be used to achieve equivalent results to those obtained in patients with normal renal function.
1990-12-15
Energy Technology Data Exchange (ETDEWEB)
To assess the technical feasibility of a newly designed stent-like electrode in rabbits. A stent-like electrode was knitted from a single thread of nitinol wire and interconnected to a generator using similar wire. In order to gauge the extent of radiofrequency ablation (RFA), we measured the depth of the ablated area in cow liver using a combination of 180-sec time intervals and 20- watt power increments. For data processing, Cox regression analysis was used. RFA was also applied to the small intestine of rabbits using this stent-like electrode under six different sets of conditions: 10 watts for 1 min, 10 watts for 2 mins, 20 watts for 1 min, 20 watts for 2 mins, 30 watts for 1 min, and 30 watts for 2 mins. To determine the gross and microscopic findings, six animals were sacrificed immediately after the procedure and the results obtained under the different sets of conditions were correlated. Eight rabbits were monitored for 4 weeks prior to ...
2003-03-01
Energy Technology Data Exchange (ETDEWEB)
The purpose of this study was to investigate the feasibility and the optimal conditions of radiofrequency (RF) ablation by using the stent-type electrode upon the saphenous vein of goats for the endovenous treatment of varicose veins. A self-expandable nitinol stent electrode (6 mm diameter, 2 cm length, cell size; 1.3 x 2 mm) was designed to expose the distal 1 cm segment to allow for contact with the venous wall. The proximal part of the electrode was connected to the RF generator by insulated copper wires located within the stent electrode introducer. Initially, to optimize the power setting, ablation of 6 saphenous veins in 3 goats was performed with power settings of 10, 20 and 30 W. Pull back rate of the electrode was 2 and 4 cm/min for each power level, respectively. The goats were sacrificed 4-6 weeks later and histologic examinations of the saphenous veins were done. For the second part of the experiment, RF ...
2004-10-15
Energy Technology Data Exchange (ETDEWEB)
Tribological performance of alumina and silicon carbide ceramics as well as of the hardened steel 100Cr6 for reference was studied during reciprocating sliding and cavitation erosion in isooctane as substitute of gasoline and in distilled water. It was the aim to characterize effects of surface finish of the specimens and the liquid media on friction, resistance to sliding wear and cavitation erosion. Sliding wear tests were run on the self-mated ceramics and ceramic/steel pairs under conditions of boundary lubrication using a laboratory tribometer with cylinder-on-plate geometry. Vibratory cavitation erosion tests were conducted according to ASTM G 32-92. High initial surface roughness of coarse ground specimens led to a distinct running-in period during sliding contact with a transition from high to low values of friction coefficient and wear intensity. Incubation time was reduced with increasing surface roughness in the cavitation tests. ...
2005-03-01
Innovative Structural and Joining Concepts for Lightweight Design of Heavy Vehicle Systems
Energy Technology Data Exchange (ETDEWEB)
The extensive research and development effort was initiated by the U.S. Department of Energy (DOE) in 2002 at West Virginia University (WVU) in order to investigate practical ways of reducing the structural weight and increasing the durability of heavy vehicles through the judicious use of lightweight composite materials. While this project was initially focused on specific Metal Matrix Composite (MMC) material, namely Aluminum/Silicon Carbide (Al/SiC) commercially referenced as ''LANXIDE'', the current research effort was expanded from the component level to the system level and from MMC to other composite material systems. Broadening the scope of this research is warranted not only by the structural and economical deficiencies of the ''LANXIDE'' MMC material, but also by the strong coupling that exists between the material and the geometric characteristics of the ...
2006-09-30
Energy Technology Data Exchange (ETDEWEB)
Volume one contains calculations for: embankment design--embankment material properties; Union Carbide site--bedrock contours; vicinity properties--origin of contamination; North Continent and Union Carbide sites contaminated materials--excavation quantities; and demolition debris--quantity estimate.
1995-09-01
Radial distribution of bonded fission gas in mixed carbide fuel pins
International Nuclear Information System (INIS)
The fission gas xenon bonded in bubbles, in pore, and in the lattice of mixed carbide fuels is measured by electron-probe microanalysis. Radial xenon distribution and release curves are determined and are calibrated by gas chromatography of the bonded fission gas and by burnup analysis in the respective pin sections of the irradiation experiments FR2 6A and 6C, Mol 11/K 2, and DFR 330/1. The results are correlated to the microstructure of the fuel, bonding medium, temperature, and burnup. (Auth.).
1979-01-01
Powder metallurgical high performance materials. Proceedings. Volume 3: general topics
International Nuclear Information System (INIS)
The proceedings of these seminars form an impressive chronicle of the continued progress in the understanding of refractory metals and cemented carbides and in their manufacture and application. The 15"t"h Plansee Seminar was convened under the general theme 'Powder Metallurgy High Performance Materials'. Under this broadened perspective the seminar will strive to look beyond the refractory metals and cemented carbides, which remain at its focus, to novel classes of materials, such as intermetallic compounds, with potential for high temperature applications. (boteke)
2001-05-01
Development of Bulk Nanocrystalline Cemented Tungsten Carbide for Industrial Applicaitons
Energy Technology Data Exchange (ETDEWEB)
This report contains detailed information of the research program entitled "Development of Bulk Nanocrystalline Cemented Tungsten Carbide Materials for Industrial Applications". The report include the processes that were developed for producing nanosized WC/Co composite powders, and an ultrahigh pressure rapid hot consolidation process for sintering of nanosized powders. The mechanical properties of consolidated materials using the nanosized powders are also reported.
2009-03-10
Carbon effect on the structure and plasticity characteristics of titanium #beta#-alloys
International Nuclear Information System (INIS)
In this paper a study is made of the structure and mechanical properties of the #beta# alloy system Ti-Mo-Zr-Sn (the composition of which is equivalent to the #beta# III alloy used abroad) containing different amounts of carbon. Study of the #beta#-titanium alloy containing 0.1% C revealed the presence of particles of titanium carbide. Separation of the titanium carbide promotes a reduction in impact strength, an increased tendency toward cold shortness, and poorer workability. (author).
British Library Electronic Table of Contents (United Kingdom)
The nanocomposite WC-Co powders were prepared through planetary ball milling method. Effects of grain growth inhibitor addition and the vacuum sintering parameters on the microstructure and properties of ultrafine WC-10Co cemented carbides were investigated using X-ray diffractometer, scanning electron microscope and mechanical property tester. The results show that VC and NbC additions can refine the WC grains, decrease the volume fraction of Co3W3C phase in ultrafine WC-10Co cemented carbides, and increase the hardness and fracture toughness of the base alloys. After sintering for 60 min at 1400 degreeC, the average grain size and hardness of ultrafine-grained WC-10Co-1VC cemented carbide are 470 nm and HRA 91.5, respectively. The fracture toughness of cemented carbide WC-10Co-1NbC alloy...
2009-01-01
Ceramic/polymer functionally graded material (FGM) lightweight armor system
Energy Technology Data Exchange (ETDEWEB)
This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Functionally graded material is an enabling technology for lightweight body armor improvements. The objective was to demonstrate the ability to produce functionally graded ceramic-polymer and ceramic-metal lightweight armor materials. This objective involved two aspects. The first and key aspect was the development of graded-porosity boron-carbide ceramic microstructures. The second aspect was the development of techniques for liquid infiltration of lightweight metals and polymers into the graded-porosity ceramic. The authors were successful in synthesizing boron-carbide ceramic microstructures with graded porosity. These graded-porosity boron-carbide hot-pressed pieces were then successfully liquid-infiltrated in vacuum with molten aluminum at 1,300 C, and with liquid polymers at ...
1998-12-31
The Silicone Conundrum Part II: ?Low Outgassing? Silicones
British Library Electronic Table of Contents (United Kingdom)
Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.
2011-01-01
Silicon electrochemistry related to the formation of porous silicon
Energy Technology Data Exchange (ETDEWEB)
We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.
1988-01-01
International Nuclear Information System (INIS)
Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).
Energy Technology Data Exchange (ETDEWEB)
Purpose: To report on the nephron-sparing, percutaneous ablation of a large renal cell carcinoma by combined superselective embolization and percutaneous radiofrequency ablation. Materials and Methods: A 5 cm renal cell carcinoma of a 43-year-old drug abusing male with serologically proven HIV, hepatitis B and C infection, who refused surgery, was superselectively embolized using microspheres (size: 500 - 700 {mu}m) and a platinum coil under local anesthesia. Percutaneous radiofrequency ablation using a 7F LeVeen probe (size of expanded probe tip: 40 mm) and a 200 Watt generator was performed one day after transcatheter embolization under general anesthesia. Results: The combined treatment resulted in complete destruction of the tumor without relevant damage of the surrounding healthy renal tissue. The patient was discharged 24 hours after RF ablation. No complications like urinary leaks or fistulas ...
2001-11-01
Self-organization of nickel atoms in silicon
British Library Electronic Table of Contents (United Kingdom)
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The effect of partial and total replacement of tungsten by molybdenum on the mechanical technical properties were investigated with the cold work steel 60 WCrV 7 (DIN 1.2550). While maintaining the total quantity of tungsten atoms and/or molybdenum atoms in the steel, no differences occur in the type of the separated carbides. After annealing in the range of the pearlite stage with annealing times of up to 150 h, the carbide phases M/sub 23/C/sub 6/ and MC are, besides alpha iron, also present. In short-time annealed states also M/sub 6/C carbides occur. These are formed during austeniting and remain in the steel as residual carbides in austeniting treatment carried out under normal conditions. Compared with tungsten alloyed steel, there is an increased formation of M/sub 6/C carbides in molybdenum alloyed steels during austeniting. By a long-time annealing treatment in the range of ...
1985-12-11
Energy Technology Data Exchange (ETDEWEB)
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
1981-01-01
Energy Technology Data Exchange (ETDEWEB)
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
1982-12-23
Mesoporous Silicon-Based Anodes for High Capacity, High - NASA
Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...
Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector
Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector
1993-01-01
Deep donor states of muonium in silicon and germanium (status report exp SC81)
Deep donor states of muonium in silicon and germanium (status report exp SC81)
1979-01-01
A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer
1991-01-01
WC-TiC-Ni cemented carbide with enhanced properties
British Library Electronic Table of Contents (United Kingdom)
In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...
2008-01-01
International Nuclear Information System (INIS)
The structure of nano-porous carbon, obtained by means of chlorination of carbide compounds with various crystal structure (SiC, TiC, Mo_2C) is studied through the method of small-angle diffraction. The angular dependences of the scattering intensity obtained are interpreted as the result of scattering from the nanoparticles of different size. The functions of the scattering particles distribution by the m(R_g) inertia radii are determined. It is shown that in spite of the source carbide, the highest fraction of the volume in the porous carbon constitute the particles with R_g #approx# 5 A. The nanoparticles in the samples obtained from SiC, wherein the average value of the R_g"a"v < 6 A, are most uniform by size. The nanoparticles in the porous carbon, obtained from Mo_2C, are on the average by two times larger
1999-08-01
Energy Technology Data Exchange (ETDEWEB)
The electrochemical metal dissolution of 100Cr6 steel in sodium chloride solution, applying high electrolyte flow rates and high current densities, has been studied with a view to the influence of material heterogeneities such as carbide segregation lines in the steel matrix. It was shown that the presence of such segregations is responsible for the formation of troughs on the specimen surface during electrochemical dissolution. A mechanism for trough formation was proposed. A dedicated heat treatment applied to the 100Cr6 steel eliminated the carbide segregation lines and established a soft annealed, fine-grained microstructure containing globular carbides. Subsequent electrochemical dissolution did not show any development of surface irregularities as troughs. (orig.)
2001-05-01
Impact of Cr3C2/VC addition on the dry sliding friction and wear response of WC-Co cemented carbides
British Library Electronic Table of Contents (United Kingdom)
Two grades of WC-10wt.%Co cemented carbide with or without addition of Cr3C2/VC grain growth inhibitor during liquid phase sintering were produced with the goal to investigate their reciprocating sliding friction and wear behaviour against WC-6wt.%Co cemented carbide under unlubricated conditions. The tribological characteristics were obtained on a Plint TE77 tribometer using distinctive normal contact loads. The generated wear tracks were analyzed by scanning electron microscopy and quantified topographically using surface scanning equipment. The post-mortem obtained wear volumes were compared to the online assessed wear. Correlations between wear volume, wear rate and coefficient of friction on the one hand and sliding distance and microstructural properties on the other hand were determ...
2009-01-01
Creep performance and microstructure of the iron alloy Alloy 800 HT
International Nuclear Information System (INIS)
The examination of the high-temperature properties of the alloy Alloy 800HT has shown that both the creep performance and the microstructure of the material can be purposefully set by the initial heat treatment. At the high temperatures applied, (700-900 C), a rapid softening process sets in induced by carbide precipitation, stabilization, and coarsening. This softening process causes creep velocities strongly accelerating as a function of duration of the heat treatment prior to the creep test. The identified cause of the softening effect is a change in particle size that could be verified by SEM and TEM. It is shown that two different carbide precipitate size classes are responsible for the softening effect. While the precipitates dectable by TEM become effective primarily via interactions with dislocations, the carbide precipitates detectable only by SEM contribute to a hardening of the grain boundaries and the ...
1997-11-28
The interaction of fast alpha particles with pellet ablation clouds
International Nuclear Information System (INIS)
The energy spectra of energetic confined alpha particles are being measured using the pellet charge exchange method [R. K. Fisher, J. S. Leffler, A. M. Howald, and P. B. Parks, Fusion Technol. 13, 536 (1988)]. The technique uses the dense ablation cloud surrounding an injected impurity pellet to neutralize a fraction of the incident alpha particles, allowing them to escape from the plasma where their energy spectrum can be measured using a neutral particle analyzer. The signal calculations given in the above-mentioned reference disregarded the effects of the alpha particles' helical Larmor orbits, which causes the alphas to make multiple passes through the cloud. Other effects such as electron ionization by plasma and ablation cloud electrons and the effect of the charge state composition of the cloud, were also neglected. This report considers these issues, reformulates the signal level calculation, and uses a Monte-Carlo approach to calculate ...
Structural analysis of experimental carbide fueled driver assmbly flow duct for testing in the FFTF
International Nuclear Information System (INIS)
Mixed carbide fueled driver assembly experiments will be tested in FFTF fuel driver positions as part of the National Advanced Fuel Program. The design of the experiment flow ducts must assure conformance to FFTF functional requirements in addition to service as a test vehicle for the carbide fuel irradiations. Test goals of damage fluence burnup, and fluence to burnup ratio exceed those of the standard oxide fueled drivers. As a consequence, the 20% cold worked type 316 stainless steel material of construction will experience significant irradiation induced creep and swelling. Additionally, the flow duct design must withstand the enhanced thermal transients produced by the action of carbide fuel during reactor scrams. A major FFTF functional requirement is that adjacent flow ducts do not touch each other except at the load pads. This requires a realistic analysis of the creep and swelling deformation of the flow duct ...
Irradiation behavior of FBTR mixed carbide fuel at various burn-ups
International Nuclear Information System (INIS)
The fast breeder test reactor at Kalpakkam has completed nearly 25 years of operation and is now operating at 18 MWt capacity with 46 fuel subassemblies (FSA) in the core consisting of 27 Mark-I (70% PuC + 30% UC), 13 Mark-II (55% PuC + 45% UC) and 6 MOX (44% PuO_2 + 56% UO_2) and one test PFBR FSA. Post Irradiation Examination (PIE) campaigns on FSAs at different burnup levels has provided valuable information about the irradiation behavior of the carbide fuel. This paper gives a summary of the irradiation performance of the carbide fuel evaluated through some of the investigations such as neutron radiography, x-radiography, gamma scanning, fission gas analysis and ceramography. Burnup of the carbide fuel could be enhanced from the initial design burnup limit of 50 GWd/t to 165 GWd/through systematic PIE. (author)
2010-10-01
Pitting corrosion resistance of silicon-implanted stainless steels
International Nuclear Information System (INIS)
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
Influence of germanium and oxygen impurities on the radiation hardening of monocrystalline silicon
International Nuclear Information System (INIS)
... defects doped materials germanium infrared radiation monocrystals neutron
Fouling Study of Silicon Oxide Pores Exposed to Tap Water
Energy Technology Data Exchange (ETDEWEB)
We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.
2007-07-12
Boron profiles in amorphous and crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
1989-01-01
International Nuclear Information System (INIS)
Radio-frequency catheter ablation (RFCA) of the distal pulmonary veins is increasingly being used to treat recurrent or refractory atrial fibrillation that doesn't respond to pharmacologic therapy or cardioversion. Successful RFCA of atrial al fibrillation depends on the pre-procedural understanding of the complex anatomy of the distal pulmonary veins and the left atrium. Aim of this parer is to describe the technical main features that characterise the multidetector helical computed tomography in the evaluation of this anatomic region before and after RFCA procedure. The 3D post-processing techniques useful for pre-RFCA planning are straightforward.
Some properties of atomic beam produced by laser induced ablation of Li target
International Nuclear Information System (INIS)
Pulsed atomic beams produced in vacuum by laser induced ablation from a lithium target are analyzed by laser induced fluorescence (LIF). The 1-mixing processes induced in the n = 9, 10 Li Rydberg states by collisions with CO_2 molecules illustrate the application of the method. Resolution is limited by the 1 mm diameter of the probe laser beam. Combining LIF and absorption measurements gives n_L_i as a function of time at various distances from the target surface. The investigation of the Li-C0_2 1-mixing process in a heat pipe oven proved impossible due to the high reactivity of Li with C0_2. This problem was solved by renewing the Li atoms at each laser shot. Values obtained for n = 9, n = 10 are k = 17 x 10"-"8 and 15 x 10"-"8 cc/sec, respectively.
British Library Electronic Table of Contents (United Kingdom)
A rapid and cost-effective assessment was required to provide advice to management on the connectivity between juvenile and adult life cycle stages of Baldchin Groper Choerodon rubescens, a labrid endemic to the west coast of Australia, which has high social value, but relatively low commercial fishery importance. To minimise costs we used laser ablation ICP-MS to analyse levels of a small suite of elements (Ca, Mg, Mn, Cu, Zn, Sr, Rb, Ba and Pb) at the margin (adult phase) and core (juvenile phase) of the same otoliths of adult C. rubescens, collected at ten locations in five management zones. The elemental composition of both otolith margins and cores differed significantly among management zones and in some cases among locations within zones. Similarity of the pattern of among-zone elem...
2011-01-01
Pulsed Radiofrequency Ablation for Residual and Phantom Limb Pain: A Case Series
British Library Electronic Table of Contents (United Kingdom)
Abstract Residual limb pain (RLP) and phantom limb pain (PLP) can be debilitating and can prevent functional gains following amputation. High correlations have been reported between RLP and the stump neuromas following amputation. Many treatment methods including physical therapy, medications, and interventions, have been used with limited success. Pulsed radiofrequency ablation (PRFA) has shown promise in treating neuropathic pain because of the inhibition of evoked synaptic activity. We present 4 amputees who were treated with PRFA after failing conservative management for their RLP and PLP. All 4 patients underwent PRFA and demonstrated at least 80% relief of RLP for over 6 months. One patient reported a complete resolution of phantom sensation while another patient had significantly de...
2010-01-01
The optical and nonlinear optical properties of colloidal solutions of silver obtained by laser ablation in water and ethanol are studied. It is shown that freshly prepared colloids experience a full or partial sedimentation by changing their nonlinear optical properties. Aqueous colloids undergo a partial sedimentation and their nonlinear optical absorption changes to nonlinear optical transmission. The obtained results are interpreted using the Drude model for metal particles taking the particle size into account and can be explained by the sedimentation of larger silver particles accompanied by the formation of a stable colloid containing silver nanoparticles with a tentatively silver oxide shell. The characteristic size of particles forming such a stable colloid is determined and its optical nonlinearity is estimated.
2004-07-01
Energy Technology Data Exchange (ETDEWEB)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
2007-10-15
International Nuclear Information System (INIS)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
2007-10-01
Infrared spectroscopy analysis of MgO-doped silicon nitride
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.
1997-12-31
Study of porous silicon morphologies for electron transport
International Nuclear Information System (INIS)
Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...
1993-05-17
Selective emitter using porous silicon for crystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...
2009-06-15
X-ray ablation measurements and modeling for ICF applications
Energy Technology Data Exchange (ETDEWEB)
X-ray ablation of material from the first wall and other components of an ICF (Inertial Confinement Fusion) chamber is a major threat to the laser final optics. Material condensing on these optics after a shot may cause damage with subsequent laser shots. To ensure the successful operation of the ICF facility, removal rates must be predicted accurately. The goal for this dissertation is to develop an experimentally validated x-ray response model, with particular application to the National Ignition Facility (NIF). Accurate knowledge of the x-ray and debris emissions from ICF targets is a critical first step in the process of predicting the performance of the target chamber system. A number of 1-D numerical simulations of NIF targets have been run to characterize target output in terms of energy, angular distribution, spectrum, and pulse shape. Scaling of output characteristics with variations of both target yield and hohlraum wall thickness are also described. ...
1996-09-01
Plasma lens formation in e{gamma} and {gamma}{gamma} colliders
Energy Technology Data Exchange (ETDEWEB)
The beams in electron linear colliders can be converted to nearly monochromatic photon beams by means of Compton backscattering of laser photons. The electron beams must then be diverted from the interaction point by some means, the best of which seems to be a plasma lens. This paper describes the constraints on the plasma lens in this application and shows how the ablation of solid hydrogen pellets might be able to produce plasmas to satisfy these constraints. ((orig.)).
1995-02-01
International Nuclear Information System (INIS)
The purpose of this study was to compare a double freeze-thaw protocol to a triple freeze-thaw protocol for pulmonary cryoablation utilizing an in vivo porcine lung model. A total of 18 cryoablations were performed in normal porcine lung utilizing percutaneous technique with 9 each in a double- (10-5-10) and triple-freeze (3-3-7-7-5) protocol. Serial noncontrast CT images were obtained during the ablation. CT imaging findings and pathology were reviewed. No imaging changes were identified during the initial freeze cycle with either protocol. However, during the first thaw cycle, a region of ground glass opacity developed around the probe with both protocols. Because the initial freeze was shorter with the triple freeze-thaw protocol, the imaging findings were apparent sooner with this protocol (6 vs. 13 min). Also, despite a shorter total freeze time (15 vs. 20 min), the ablation zone identified with the triple freeze-thaw protocol was not ...
2010-12-01
UK PubMed Central (United Kingdom)
Although matrix metalloproteinase-9 (MMP-9) is involved in cardiomyocytes contractility dysfunction, tissue inhibitor of metalloproteinase-4 (TIMP-4) mitigates the effect of MMP-9, and proteinase-activated...Full Text Available
2010-07-01
International Nuclear Information System (INIS)
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
2008-05-19
Application of neutron transmutation doping method to initially p-type silicon material
Energy Technology Data Exchange (ETDEWEB)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...
2009-07-15
Application of neutron transmutation doping method to initially p-type silicon material
International Nuclear Information System (INIS)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
2008-05-12
Annealing of silicon implanted with arsine and hydrogen ions
Energy Technology Data Exchange (ETDEWEB)
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
2003-01-01
International Nuclear Information System (INIS)
In laser ablation inductively coupled plasma mass spectrometry (LA-ICPMS), the properties of laser-generated aerosols, such as size and composition, are crucial for matrix-independent quantification. In this study, the aerosol particle morphology and elemental composition generated by two state-of-the-art laser systems (ArF excimer nanosecond-UV laser and Ti:sapphire femtosecond-IR laser) were investigated by electron microscopic techniques. Electrostatic sampling of the aerosols directly onto transmission electron microscopy (TEM) grids allowed us to study the morphology and elemental composition of the aerosols using TEM and TEM-EDX (energy dispersive X-ray spectroscopy) analyses, respectively. The results of the electron microscopic studies were finally compared to the LA-ICPMS signals of the main matrix components. The investigations were carried out for non-conducting materials (glass and zircon), metallic samples (steel and brass) and semiconductors ...
Energy Technology Data Exchange (ETDEWEB)
The electrochemical dissolution behaviour of armco-iron and of the steels C15, C45, C60 and 100Cr6 in concentrated sodium chloride media has been investigated. Anodic metal dissolution experiments have been carried out using the flow channel cell (parallel plate reactor), the rotating cylinder electrode (RCE) and the capillary cell. The microstructure of the steel has been varied through variation of carbon content and heat treatment (e.g. soft annealed with globular carbides or pearlitic). Current-efficiency values have been obtained by gravimetric measurements in the current-density range from i=5 to 60 A/cm{sup 2}. For the soft annealed steels, the divalent ferrite dissolution in combination with electroless cementite removal dominates. For the pearlitic steels, the occurrence of oxygen evolution electronically conductive metal carbides or trivalent ferrite dissolution, depending on the current density applied, was detected. Microstructure ...
2002-10-01
Wire chamber degradation at the Argonne ZGS
International Nuclear Information System (INIS)
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
1986-01-16
Wire chamber degradation at the Argonne ZGS
Energy Technology Data Exchange (ETDEWEB)
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
1986-01-01
The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long
1999-01-01
UK PubMed Central (United Kingdom)
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
2008-01-01
Untitled - NASA Technical Report Server (NTRS)
is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...
The crystalline-silicon photovoltaic R&D project at NREL and SNL
Energy Technology Data Exchange (ETDEWEB)
This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.
1996-12-31
Strained silicon for quantum computing
Energy Technology Data Exchange (ETDEWEB)
Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)
2002-03-07
Mechanical Properties of Microelectronics Thin Films: Silicon ...
... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...
1989-10-01
Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors
International Nuclear Information System (INIS)
English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,
2006-03-27
Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers
Energy Technology Data Exchange (ETDEWEB)
The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).
1991-06-01
CMS Silicon Strip Tracker Performance
In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.
2011-01-01
Abstracts by Mission Directorate - NASA
A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...
ANALYSIS OF BENDING CREEP BEHAVIOR OF SILICON ...
... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...
A Two-Step Etching Method to Fabricate Nanopores in Silicon
A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.
2008-01-01
7 - NASA Technical Reports Server
... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...
Tribological coatings for liquid metal and irradiation environments
International Nuclear Information System (INIS)
Several metallurgical coatings have been developed that provide good tribological performances in high-temperature liquid sodium and that are relatively unaffected by neutron fluences to 6 X 10/sup 22/ n/cm/sup 2/ (E > 0.1 MeV). The coatings that have consistently provided the best tribological performance have been the nickel aluminide diffusion coatings created by the pack cementation process, chromium carbide or Tribaloy 700 trade mark (a nickel-base hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing materials applied by the electro-spark deposition process. The latter process is a relatively recent development for nuclear applications and is expected to find wide usage. Other coating processes, such as plasma-spray coating, sputtering, and chemical vapor deposition, were candidates ...
British Library Electronic Table of Contents (United Kingdom)
Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...
2009-01-01
Hardening of ion-irradiated A533B steels investigated with nanoindentation technique
International Nuclear Information System (INIS)
Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because MeV ion irradiation can produce defects to the depth greater ...
2008-10-13
International Nuclear Information System (INIS)
Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.
Nonformity of the electron density in amorphous silicon films
Energy Technology Data Exchange (ETDEWEB)
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
1985-12-01
Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon
International Nuclear Information System (INIS)
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
Method of mitigating titanium impurities effects in p-type silicon material for solar cells
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
1980-05-01
Electrochemical stability of silicon/carbon composite anode for lithium ion batteries
International Nuclear Information System (INIS)
Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.
2007-04-20
Dielectric barrier discharge using corona-modified silicone rubber
Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.
2008-10-01
New wear resistant composite material
Energy Technology Data Exchange (ETDEWEB)
A composite material consisting of WC-Co particles in a steel matrix was fabricated by sintering mixtures of WC-Co particles and a steel powder and infiltrating the sintered pieces with a copper alloy. Its wear resistance and mechanical properties were studied as a function of the content in WC-Co particles and other characteristics of the composite material microstructure. Infiltration provided a simple means to obtain a strong cohesion between WC-Co particles and the steel matrix. An effective matrix protection against wear is obtained with relatively low additions of particles especially with a silica abrasive which is soft with respect to cemented carbide. The experimental results show that this material has good mechanical properties and wear resistance. Depending upon abrasion resistance, wear losses are reduced up to 10 times by a 30 vol% addition of cemented carbide particles.
1983-01-01
Duplex surface treatment of AISI 1045 steel via plasma nitriding of chromized layer
British Library Electronic Table of Contents (United Kingdom)
In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...
2011-01-01
International Nuclear Information System (INIS)
The study reports the identification of different organic acids that are formed during the pyrohydrolysis of mixed carbide of uranium and plutonium using ion chromatography (IC). The identification of organic acids present in the pyrohydrolysis distillate is required to carry out interference free analysis of Cl and F. The study describes three stage isocratic separations with NaOH eluents having concentrations 2 mM, 10 mM and 50 mM respectively in order to separate and identify both aliphatic and aromatic acids. The present investigation identified formic, acetic, propionic, butyric, tartaric and oxalic acids in the distillate, however, aromatic acids could not be identified. (author)
2011-02-22
The CDF intermediate silicon layers detector
Energy Technology Data Exchange (ETDEWEB)
The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.
1999-11-01
Energy Technology Data Exchange (ETDEWEB)
Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.
2005-01-01
Is cold better ? - exploring the feasibility of liquid-helium-cooled optics.
Energy Technology Data Exchange (ETDEWEB)
Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.
1999-09-30
Application of neutron transmutation doping method to initially p-type silicon material
British Library Electronic Table of Contents (United Kingdom)
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...
2009-01-01
The surface modification of tooth dentine with a Free Electron Laser (FEL)
International Nuclear Information System (INIS)
Free Electron Laser (FEL) with the wide wavelength tunability has been developed and used for various applications. The FEL gives high efficiency for the photo-induced ablation when the laser is tuned to an absorption maximum of the target. The FEL was tuned to 9.4 #mu#m, which is an absorption maximum of phosphoric acid ion, a known major component of dentine. The FEL pulse length was several ps. The average output power was varied from 5 to 20 mW by filters. The change of irradiated dentine surface was analyzed by mass spectroscopy and Energy Dispersive X-ray (EDX) spectroscopy. Positive ions which correspond to Na"+, CO_3"+ and many phosphoric acid ions were measured. It was found that atomic ratio of P/Ca had reduced from 0.65-0.60. The atomic ratio of P/Ca, however had not changed with irradiation by Er:YAG laser (2.9 #mu#m), or CO_2 laser (10.6 #mu#m). These results indicate the selective ablation of phosphoric acid ion by the 9.4 mm FEL ...
1998-09-02
Energy Technology Data Exchange (ETDEWEB)
Tetracycline is an antibiotic that absorbs ultraviolet light at 355 nm and preferentially binds to atherosclerotic plaque both in vitro and in vivo. Tetracycline-treated human cadaveric aorta was compared with untreated aorta using several techniques: absorptive spectrophotometry; and tissue uptake of radiolabeled tetracycline, which showed 4-fold greater uptake by atheroma than by normal vessel. In addition, intravenous tetracycline administered to patients undergoing vascular surgery demonstrated characteristic fluorescence in surgically excised diseased arteries. Because of tetracycline's unique properties, the authors exposed tetracycline-treated and untreated aorta to ultraviolet laser radiation at a wavelength of 355 nm. They found enhanced ablation of tetracycline-treated atheroma compared with untreated atheroma. The plaque ablation caused by ultraviolet laser radiation was twice as extensive in tetracycline-treated vs ...
1985-05-01
British Library Electronic Table of Contents (United Kingdom)
We found that the androgenic gland (AG) of Macrobrachium rosenbergii possesses three cell types. Type I cells are small polygonal shaped-cells (13.4 mu m in diameter), stain strongly with hematoxylin-eosin (H&E), have abundant multilayered rough endoplasmic reticulum (rER), and nuclei containing mostly heterochromatin. Type II cells are slightly larger (18.6 mu m in diameter), stain lightly with H&E, have rER with dilated cisternae, and nuclei containing mostly euchromatin. Type III cells (previously undescribed) are similar in size and shape to type I cells, but the cytoplasm is unstained and they have a high amount of smooth endoplasmic reticulum (sER) and mitochondria with tubular cristae. Bilateral eyestalk-ablation resulted in AG hypertrophy with a proliferation and predominance of ty...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...
2006-07-30
Uranium isotopic assay instrument
International Nuclear Information System (INIS)
Full text: The isotopic assay instrument under development at Pacific Northwest National Laboratory (PNNL) is capable of rapid prescreening to detect small and rare particles containing high concentrations of uranium in a heterogeneous sample. The isotopic measurement concept is based on laser vaporization of solid samples followed by sensitive isotope-specific detection using either uranium atomic fluorescence emission or uranium atomic absorbance. Both isotopes are measured concurrently, following a single ablation laser pulse using two external-cavity violet diode lasers. The simultaneous measurement of both isotopes enables the correlation of the fluorescence and absorbance signals on a shot-to-shot basis. This measurement approach demonstrated negligible channel crosstalk between isotopes. Scanning the heterogeneous samples provides high-resolution imagery of sample isotopic fluorescence and absorbance. Isotopically selective excitation of uranium vapor also ...
2006-10-16
International Nuclear Information System (INIS)
Original investigations of ablation of minerals, fullerene-like compounds, polymers and complicated biological macromolecules under the action of submillimeter radiation of the free-electron laser (FEL) developed and built at Budker Institute of Nuclear Physics [V.P. Bolotin et al., First experiments on high-power Novosibirsk terahertz free-electron laser, Budker INP, 2005, p. 37
2007-05-21
International Nuclear Information System (INIS)
The purpose of this paper is to report the personal experience with helical CT evaluation of hepatocellular carcinoma treated with various percutaneous interventional procedures. From December 1996 to September 1998 it were examined with helical CT 41 patients (73 nodules in all) with hepatocellular carcinoma treated with percutaneous ablation therapies: conventional ethanol injection in 18 subjects (31 nodules), one-shot ethanol injection 3 (8 nodules), radiofrequency thermal ablation in 16 (25 nodules), and combined chemo embolization and ethanol injection in 4 (9 nodules). CT performed was 4-27 days after the last session, acquiring biphasic volumetric images in 14 patients and triphasic volumetric images in 27. A second treatment with subsequent CT study was performed for 28 lesions; 15 underwent 3 serial studies and 6 underwent 4 studies. Compared with pretreatment findings, the diameter was unchanged in 62% of the nodules and increased in ...
1999-12-01
Method for the approximate solution of a two-phase stefan problem with reverse motion of the front
Determination of the trajectory of a phase transition front moving in a forward or reverse direction is reduced to the solution of an ordinary differential equation. A numerical check of the results shows the method to be highly accurate. The method was used recently over a period of several years to solve various problems connected with the thawing of frozen rocks and their refreezing; among the problems considered was that of the ablation of rocks during the channeling of well, in which the method invariably proved its effectiveness. This furnishes a basis for recommending it for broader usage.
1988-03-01
Energy Technology Data Exchange (ETDEWEB)
Clinical studies have proved the effectiveness of local ablading methods in pations with non-resectable liver metastases of a colorectal carcinoma. RF ablation and LITT are a potentially curative therapy option and an alternative to systemic chemotherapy; the latter is carried out primarily for reducing tumour size with the goal of secondary resectability. The number of R0-sesectable metastases can be enhanced by a combined therapy of surgery and local ablading methods, e.g. by preoperative, intraoperative or postoperative ablasion of further non-resectable tumours during surgery. Systemic chemotherapy combined with surgery as an adjuvant method is not recommended unless in cases of non-abladable tumour recidivation. Currently, systemic chemotherapy is used as a neo-adjuvant therapy for tumour size reduction with the goal of secondary resectability or, in case of inoperability, local ablation. (orig.) [German] Abladierende Verfahren. Klinische ...
2003-03-01
Radiofrequency Ablation of Intrahepatic Cholangiocarcinoma: Preliminary Experience
International Nuclear Information System (INIS)
The purpose of this study was to evaluate the safety and efficacy of percutaneous ultrasound (US)-guided radiofrequency ablation (RFA) in patients with intrahepatic cholangiocarcinoma (ICCA) in a small, nonrandomized series. From February 2004 to July 2008, six patients (four men and two women; mean age 69.8 years [range 48 to 83]) with ICCA underwent percutaneous US-guided RFA. Preintervetional transarterial embolization was performed in two cases to decrease heat dispersion during RFA in order to increase the area of ablation. The efficacy of RFA was evaluated using contrast-enhanced dynamic computed tomography (CT) 1 month after treatment and then every 3 months thereafter. Nine RFA sessions were performed for six solid hepatic tumors in six patients. The duration of follow-up ranged from 13 to 21 months (mean 17.5). Posttreatment CT showed total necrosis in four of six tumors after one or two RFA sessions. Residual tumor was observed in two ...
2010-08-01
Energy Technology Data Exchange (ETDEWEB)
A great deal of current research is directed to finding a way to minimize thermal injury in the esophagus during radiofrequency catheter ablation of the atrium. A recent clinical study employing a cooling intraesophageal balloon reported a reduction of the temperature in the esophageal lumen. However, it could not be determined whether the deeper muscular layer of the esophagus was cooled enough to prevent injury. We built a model based on an agar phantom in order to experimentally study the thermal behavior of this balloon by measuring the temperature not only on the balloon, but also at a hypothetical point between the esophageal lumen and myocardium (2 mm distant). Controlled temperature (55 {sup 0}C) ablations were conducted for 120 s. The results showed that (1) the cooling balloon provides a reduction in the final temperature reached, both on the balloon surface and at a distance of 2 mm; (2) coolant temperature has a significant effect ...
2008-02-21
Microwave Combustion and Sintering Without Isostatic Pressure
Energy Technology Data Exchange (ETDEWEB)
This investigation involves a study of the influence of key processing parameters on the heating of materials using microwave energy. Selective and localized heating characteristics of microwaves will be utilized in the sintering of ceramics without hydrostatic pressure. In addition, combustion synthesis will be studied for the production of powders, carbides, and nitrides by combining two or more solids or a solid and a gas to form new materials. The insight gained from the interaction of microwaves with various materials will be utilized in the mobilization and subsequent redeposition of uranium.
1998-10-20
Chemicals from coal: New processes
Energy Technology Data Exchange (ETDEWEB)
This book deals specifically with the development of new processes of converting coal into useful chemical feedstocks. The major topic in this volume is the generation of syngas and its catalytic conversion to chemicals via the Fischer-Tropsch synthesis. Describes processes involved in conversion, recent catalytic developments, and the commercially important Sasol process. Also includes chapters on the carbide process and potential of future developments in the field.
1987-01-01
Application of continuous casting steel 100Cr6 (SAE 52100) for bearing balls
Energy Technology Data Exchange (ETDEWEB)
The objective of the investigation was to study the feasibility of applying continuous casting steel 100Cr6 (SAE 52100) for bearing balls. It was found that two of three continuous casted steel batches have longer or at least similar rolling contact fatigue lifetimes compared to one ingot casted batch. For one of the continuous casted batches, the rolling contact fatigue lifetime was 30% less. The micro- and macrostructure and the residual stresses below the surface of the balls were comparable. There is also no obvious difference between the four batches in the metallurgical parameters like contents of oxygen, titanium and sulfur as well as in the distribution of carbides and their network. The reason for the shorter lifetime of one batch finally was found to be due not to the continuous casting process itself. There was a difference in the cross section of the different casting moulds, and by this in the speed of solidification. As a consequence an increased ...
1998-12-31
International Nuclear Information System (INIS)
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...
Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...
2003-12-31
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO_2 films
International Nuclear Information System (INIS)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Implantation damage and anomalous diffusion of implanted boron in silicon through SiO[sub 2] films
Energy Technology Data Exchange (ETDEWEB)
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
1993-07-16
Characterization of arsenic dose loss at the Si/SiO{sub 2} interface
Energy Technology Data Exchange (ETDEWEB)
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
2000-03-01
Characterization of arsenic dose loss at the Si/SiO_2 interface
International Nuclear Information System (INIS)
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
2000-03-01
Ten-nanometer surface intrusions in room temperature silicon
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.
2002-01-01
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
Energy Technology Data Exchange (ETDEWEB)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Self-organized amorphous material in silicon (0 0 1) by focused ion beam (FIB) system
International Nuclear Information System (INIS)
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
2005-12-15
Selective emitters for thermophotovoltaic solar energy conversion
Energy Technology Data Exchange (ETDEWEB)
The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.
1983-12-01
Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing
International Nuclear Information System (INIS)
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
2005-11-14
Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.
1997-09-01
Hall mobility minimum of temperature dependence in polycrystalline silicon
Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.
1998-01-01
Whispering gallery modes in silicon-nanocrystal-coated silica microspheres
Energy Technology Data Exchange (ETDEWEB)
Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.
2007-10-15
International Nuclear Information System (INIS)
(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,
Surface activity and water repellency properties of cleavable-modified silicone surfactants
British Library Electronic Table of Contents (United Kingdom)
A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...
2006-01-01
Summary of NSF Workshop on Research Opportunities in Manufacturing in the Process Industries
... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...
Studies of relativistic heavy ion collisions at the AGS (Experiment 814)
Energy Technology Data Exchange (ETDEWEB)
This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)
1990-01-01
Self-diffusion of silicon in thin films of cobalt, nickel, palladium and platinum silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
Role of MeV ion implantation in limiting transient enhanced diffusion of boron atoms in silicon
International Nuclear Information System (INIS)
English Jul 2001 p. 143-144 China Liu Changlong Academia Sinica,
2001-07-01
International Nuclear Information System (INIS)
This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).
PolyRAD Space Radiation Shield for Commercial-Off-The
Defense satellites, including the next generation GPS and MILSTAR, continue to require TID well above that of most COTS silicon. ...
Phonon - Drag Thermopo wer in Dilute Copper Alloys - NASA ...
ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...
Energy Technology Data Exchange (ETDEWEB)
In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...
2003-08-01
Investigation of lattice strains in layered structures containing porous silicon
International Nuclear Information System (INIS)
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)
2001-09-23
Integrated Optics Anisotropic Waveguides and Devices
... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...
1989-04-30
International Nuclear Information System (INIS)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...
2002-01-01
Effect of recoil implantation of oxygen on boron enhanced diffusion in silicon
International Nuclear Information System (INIS)
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
1989-04-25
Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
Energy Technology Data Exchange (ETDEWEB)
We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.
2006-03-06
International Nuclear Information System (INIS)
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
Energy Technology Data Exchange (ETDEWEB)
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...
1997-07-01
Chromium-Manganese Nonmagnetic Steels
International Science & Technology Center (ISTC)
Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures
Boron diffusion in amorphous silicon
Energy Technology Data Exchange (ETDEWEB)
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.
2005-12-05
Boron diffusion in amorphous silicon
International Nuclear Information System (INIS)
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.
2005-12-05
Energy Technology Data Exchange (ETDEWEB)
Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).
1991-11-01
Acrobat Distiller, Job 7 - GLTRS - NASA
into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...
8 - NASA Technical Reports Server
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
Model to simulate the interaction between boron carbide and steam or air at high temperature
Energy Technology Data Exchange (ETDEWEB)
The oxidation of boron carbide in steam or air was recently extensively studied especially in Forschungszentrum Karlsruhe, Institut fuer Materialforschung. An important data set is available for the interaction modelling. An oxygen diffusion model through the superficial liquid boron oxide formed on the boron carbide external surface associated to a superficial reaction between the liquid boron oxide and steam is proposed to simulate the experimental kinetics from BOX rig and thermogravimetric tests on the interaction between steam and boron carbide at a temperature range 800 C to 1400 C. The oxygen diffusion model will be also useful to simulate interaction between boron carbide and Ar+O2 (air simulation) atmosphere when the steam pressure becomes zero. From the analysis of BOX rig experimental kinetics of non-condensable (H2, CO2, CO and CH4) gases we propose an oxygen diffusion model through the ...
2005-03-01
Energy Technology Data Exchange (ETDEWEB)
To make the surface composites with hard ceramics particles is an effective means for satisfying the request for the wear-resistance of the casting products. Covering casting is a general method for forming the composites by adding the adhesive into ceramics particles. However, due to the using of adhesive, pore and intermediate are easy to generate, and it is one of the reasons making the wear-resistance unstable. In the present study, it is attempted to form the wear-resistant composite layer by dispersing cast tungsten carbide (CTC) particles on the surface of wear-resistant 7 mass% Mn steel without using adhesives. Subsequently, the experiments on the wear-resistance of the obtained surface composites under several wear conditions are carried out. It is revealed by the results thereof that 7 mass% Mn steel surface composites with CTC particles have the wear-resistance which is even more excellent than those of white cast iron and cast chromium cast iron. It is ...
1995-04-25
The influence of prior ageing on creep damage development in two variants of Alloy 800
Energy Technology Data Exchange (ETDEWEB)
The influence of high temperature thermal ageing treatments on the development of intercrystalline creep damage in two variants of Alloy 800 has been investigated. Ageing up to 3000 h and creep testing were carried out at 800 and 900 C. The high temperature behaviour of the 800HT variant is discussed with reference to the effect of heat treatments on the microstructure. The metallographic methods by which the creep damage was quantitatively determined are described. The growth rate of intercrystalline microcracks was described using a statistical model and the dependence of crack growth rate on the thermal history for both 800HT and 800H was determined. The carbide precipitation and growth processes were determined as functions of the exposure temperature and duration. The results showed the three characteristic stages, precipitation, growth and coarsening (Ostwald ripening). The largest increase in the intergranular creep damage was found in Alloy 800HT within the ...
1997-06-01
British Library Electronic Table of Contents (United Kingdom)
TaC and TaC-1wt.% B4C powders were consolidated using spark plasma sintering (SPS) at 1850^oC and varying pressure of 100, 255 and 363MPa. The effect of pressure on the densification and grain size is evaluated. The role of nano-sized B4C as sintering aid and grain growth inhibitor is studied by means of XRD, SEM and high resolution TEM. Fully dense TaC samples were produced at a pressure of 255MPa and higher at 1850^oC. The increasing pressure also resulted in an increase in TaC grain size. Addition of B4C leads to an increase in the density of 100MPa sample from 89% to 97%. B4C nano-powder resists grain growth even at high pressure of 363MPa. The formation of TaB2/Carbon at TaC grain boundaries helps in pinning the grain boundary and inhibiting grain growth. The effect of B4C addition on...
2011-01-01
Pitting corrosion resistance of high alloy OCTG in ferric chloride solution
International Nuclear Information System (INIS)
The effects of alloying elements and precipitated phases on the corrosion rate of high alloy OCTG in the ferric chloride solution have been evaluated. The corrosion rate of Fe-Cr-Ni-Mo alloys without precipitated phases, e.g. carbides and sigma phase, can be estimated from the composition using the following equation: log(C.R.)=-0.144xPRE-7690/(273+T)+28.6 where C.R. is the corrosion rate in g/m/sup 2//hr; PRE is Cr+3Mo+16N in percent and T is the test temperature in "0C. The activation energies of the ferric chloride test are almost the same regardless of PRE or Ni content when no detrimental phase precipitates. When carbides or the sigma phase precipitate, the corrosion rate is higher and the activation energy is lowered. This suggests that secondary phases give preferential sites for initiation of pitting corrosion.
Energy Technology Data Exchange (ETDEWEB)
The effect of microalloying with carbide-forming (V,Ti,Nb) and rare-earth elements and of high-temperature thermomechanical processing (HTMP) on the structure, mechanical properties and low temperature behaviour of 38CrSi steel has been investigated. It has been shown that in the case of dissolution of carbides during heating for quench hardening, the tempering resistance of the steel increases. It has also been found that - as a result of HTMP - the susceptibility of the steel irreversible temper brittleness decreases, irrespective of the steel having been microalloyed or not. The data, originating from tensile testing and impact testing (with the help of laser interferometry) in the temperature range from +20 to -196 degC, has been explained in terms of fractographic analysis. It has been shown that microalloying and HTMP favour the occurrence of ductile microvoids in the fracture. On the other hand, HTMP and rare-earth elements changes the ...
1998-10-01
Energy Technology Data Exchange (ETDEWEB)
Experimental discussions were given on effect of V and W addition on the high temperature strength properties of 12% Cr-15% Mn austenite steels. The test samples were added with W at 0% to 3.5% and V at 0% to 0.5% in addition to C and N, and were given aging treatment or solution treatment. This paper describes the following matters on the results of high-temperature strength measurements and structural observation: A remarkable trend was observed that M23 Cb type carbides precipitate in the aging treatment, wherein aging hardening appears prominently which is attributable to ultra-fine deposits of vanadium nitride (VN) in the V-added material; the V addition is very effective in increasing the high-temperature tensile strength and creep fracture strength as compared with single W addition, wherein the said carbides that accelerate the precipitation as a result of the V addition make a large contribution, in addition to that by ultra-fine VN ...
1992-11-01
Creep-fatigue and temperature synergisms in alloy 800
Energy Technology Data Exchange (ETDEWEB)
Alloy 800 from three different commercial heats have been continuously cycled and cycled with a hold period at 922/sup 0/K. The starting microstructures of these heats reflects an inherently wide spectrum of possibilities for Alloy 800. The amounts and morphologies of the TiC and M/sub 23/C/sub 6/ carbides are different among the heats. During cycling, M/sub 23/C/sub 6/ forms intragranularly in a solution annealed heat. This precipitation contributes to the cyclic hardening. Both mill annealed heats of Alloy 800 are stable to carbide precipitation during cycling. The heat with the lower carbon content formed ..gamma..' during cycling but the volume fraction was too low to contribute to hardening. The inclusion of hold periods caused the dislocation substructure to become more diffuse in the mill annealed heats. The cyclic hardening was enhanced with the inclusion of the hold periods but this was not due to any microstructural change ...
1984-01-01
A laser pyrolysis technique has been used to produce ultrafine particles of iron carbide with diameters ranging from 2 to 20 nm. Catalysis using iron carbide was investigated in the liquefaction of Wyodak subbituminous coal; yields were determined. A study was carried out to examine the possibility of using an ultrasonic extraction technique as a rapid method of product work-up of samples following pretreatment or liquefaction experiments. A similar study had shown that extraction of coal-derived products by an ultrasonic method was rapid and gave yields and product distributions comparable to those obtained by Soxhlet extraction. On another project, three different types of supported catalysts were used to test activity for the combined water-gas shift hydrogenation of a synthetic donor solvent. The three catalysts tested were: (1) Alumina supported NiMo catalyst-Shell 324m; (2) Bulk hydrous TiO NiMo catalyst; (3) Thin film hydrous TiO ...
1991-12-31
A study of corrosion resistance behavior for W + C dual implanted H13 steel
International Nuclear Information System (INIS)
The surface layer optimized in resistance of corrosion and wear has been obtained by W + C dual implantation on H13 steel. The electrochemical polarization measurements show that the peak current density I_D is increased and then saturated with increasing of voltage scanning loops. The I_D is 100 times smaller than that of H13 steel, and 2-3 times smaller than that of tungsten. Then influence of dual implantation order on corrosion resistance is also studied. The I_D for W_5C_8 implanted first with W is half of that for C_5W_5 implanted first with C. The corrosion resistance structure of the samples after corrosion is observed by SEM. The X-ray analysis indicates that the structure consists of disperse phases of WC, W_2C, FeW, Fe_2W, FeW_2C and iron carbides. It is shown from Auger analysis that the optimum complex layer for corrosion resistance consists of thin carbon film on surface, disperse phases of these metal compounds in middle and then iron ...
Energy Technology Data Exchange (ETDEWEB)
Minimally invasive treatment for small renal cell carcinoma (RCC) can be necessary in selected patients and, anyway, is desirable. In situ ablation techniques, including RFA, have been developed. The aim of this study is to evaluate the feasibility, safety and short-term local effectiveness of percutaneous US-guided RFA in a small series, as well as mid-term patient outcome. Thirteen patients with a total of 18 tumors (17 small lesions, 35 mm in size or less, and a larger one, 75 mm in size) underwent 19 RFA sessions. Seven patients had a solitary kidney, and three suffered from VHL disease, too. We treated four lesions in a patient with a bilateral tumor. In another patient, three lesions were ablated. Seventeen tumors were RCC; one was a metastasis from lung cancer. Eight lesions were parenchymal, six exophytic, two parenchymal/exophytic, one parenchymal/central and one central. A monopolar RF system with multitined expandable electrode ...
2004-12-01
International Nuclear Information System (INIS)
The tool materials durability problem, in particular shock and wear resistance, has allowed to formulate a set of requirements and also to stablish the dependence between physical properties and wear. However, for understanding the nature of the process, for example determining the tribological property of the cutting tool, it is necessary to consider the atom interactions in a crystal. A theoretical study of the physical properties of cutting tool materials (W-Ti-C) with varying concentration of titanium is presented. Total and partial local electronic density for each atom in such hard solutions were calculated. (nevyjel)
2001-05-01
Study of dose variation in various body parts with respect to chest dose in the working environment
International Nuclear Information System (INIS)
Mixed Uranium Plutonium Carbide ((U, Pu) C), in the form of pellets encapsulated in stainless steel tubes is the fuel for Fast Breeder Test Reactor (FBTR) at Kalpakkam. For the fabrication of fuel for enlarging the core of this reactor, high burn up plutonium is used. The external exposure in these labs was significantly higher than that with low burn up Pu fuel. Dose evaluation to the organs was carried out using experimental TLDs during various operations of FBTR fuel fabrication to study the dose distribution pattern. (author)
2011-02-22
Mechanical properties of titanium-niobium carbon nitride
Energy Technology Data Exchange (ETDEWEB)
A study was made of the variation in strength characteristics of group IV transition metal carbon nitrides alloyed with carbides or group V metal nitrides. A complex solid solution of titanium-niobium carbonitride was preliminarily synthesized to a homogeneous equilibrium state and then crushed. The calculated quantity of binder metal was added as elemental powders, the mixture was vibration ball milled in ethanol and the plasticized charge was used to press experimental specimens for mechanical testing. The studies showed that the high-temperature strength properties of the new cermet are superior to standard type KNT. The material is thus promising for use in the manufacture of tools. 8 references, 3 figures.
1984-07-01
Theoretical transition energies, lifetimes and fluorescence yields of multiply ionized silicon
Energy Technology Data Exchange (ETDEWEB)
Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.
1982-01-01
Energy Technology Data Exchange (ETDEWEB)
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
1994-06-01
Study of transient enhanced dopant diffusion in silicon and proposed limiting methods
International Nuclear Information System (INIS)
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
2001-09-01
Soft X-ray spectra of amorphous hydrogenated silicon
Energy Technology Data Exchange (ETDEWEB)
The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.
1985-06-01
Silicone-rubber washers soothe vibrating transmission lines
Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.
1965-01-01
Silicon nanopowder as active material for hybrid electrodes of lithium-ion batteries
British Library Electronic Table of Contents (United Kingdom)
Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.
2011-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
1991-01-01
On the theory of transient enhanced diffusion in boron-implanted silicon
International Nuclear Information System (INIS)
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
International Nuclear Information System (INIS)
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
1988-12-09
The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.
1999-01-01
Determination of the conversion factor for infrared measurements of carbon in silicon
Energy Technology Data Exchange (ETDEWEB)
The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.
1986-10-01
Boron uphill diffusion during ultrashallow junction formation
International Nuclear Information System (INIS)
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
2003-05-26
Application of Pd silicide in the process of silicon detectors
Energy Technology Data Exchange (ETDEWEB)
A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.
1990-04-01
Anomalous sputter yields due to cascade mixing
Energy Technology Data Exchange (ETDEWEB)
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
1980-05-01
Anomalous sputter yields due to cascade mixing
International Nuclear Information System (INIS)
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Energy Technology Data Exchange (ETDEWEB)
The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'
2007-08-01
British Library Electronic Table of Contents (United Kingdom)
OBJECTIVE To present our initial experience of thulium laser resection via a flexible cystoscope for recurrent non-muscle-invasive bladder cancer (ThuRBT), as transurethral resection for bladder tumour (TURBT) is regarded as the reference standard for treating this disease, but alternative laser resection or ablation is suitable especially for recurrent tumours. PATIENTS AND METHODS From January 2005 to October 2005, 32 patients with early recurrent bladder tumour (recurrent within a year after TURBT) were treated with ThuRBT via a flexible cystoscope. The follow-up included urine analysis, ultrasonography and cystoscopy every 3 months. RESULTS All patients were treated successfully with ThuRBT in one session, with no bladder haemorrhage, obturator nerve reflex or vesicle perforation. Rand...
2008-01-01
Energy Technology Data Exchange (ETDEWEB)
The feasibility of spectroscopic measurement of the velocity distribution of alpha particle using the ablation cloud of a lithium or boron pellet was tested in the DT experiment of TFTR. The measurement was performed using a 10-channel narrow-band filtered spectrometer in the wavelength covering the 3.5 MeV alpha particle Doppler broadening region of the He II 468.6 nm line and its vicinity. The spectra from a lithium pellet consists of the continuum bremsstrahlung background, lithium line emissions and possibly a 468.6 nm helium line. However, no clear evidence of alpha particles was observed, even when boron pellets were injected. (orig.) 4 refs.
1997-03-01
Pulsed laser deposition of titanium-carbonitride thin films
Energy Technology Data Exchange (ETDEWEB)
The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).
1997-05-15
Modeling of ablation by photospallation using the computer program PUFF/DFRACT
Energy Technology Data Exchange (ETDEWEB)
In general, macroscopic material failure is a manifestation of irreversible changes at the microscopic level. Many tissues, which may appear to be macroscopically homogeneous, are, at a fundamental microscopic level, a composite material. For example, cornea is composed of a hyaluronic acid matrix in which layers of collagen fibers are overlaid in a crossing pattern. The points where the collagen fibers intersect are potential nucleation sites for microscopic defects, which under the action of tensile stress, nucleate, grow and coalesce to form macroscopic failure planes, or spall planes. Using a model based on microstructural evolution, this paper examines the failure process during photoablation. Specifically, the paper describes a physically motivated, micromechanical model based on the nucleation and growth of spherical voids. This model is then used to simulate photoablation of cornea. Potential for using this model to predict the stress wave and material damage measured by ...
1995-03-01
Localization of small magnets against a noisy background
Effective localization of small magnets against a noisy, real world background can involve various methods to first identify the magnetic fields produced by the magnet of interest, then to filter out background noise, and then to analyze the available magnetic field data to localize the magnet. Here we discuss low cost techniques which allow localization of small magnets with field strengths in the milliGauss range against real world background fields in the range of hundreds of mG, which may be fluctuating by up to tens of mG. Such techniques allow magnet tracking to be used to localize catheters in place of more invasive and expensive methods, e.g. fluoroscopy, for a variety of applications, including drug infusion with peripherally inserted central catheters (PICCs), laser ablation (TMR, PTMR) and introduction of pacemaker leads.
2001-05-01
Image-guided percutaneous cryotherapy for the management of gynecologic cancer metastases
British Library Electronic Table of Contents (United Kingdom)
Objective To report the clinical response to image-guided percutaneous cryotherapy (IPC) for the palliative management of localized metastases in patients with gynecologic malignancies. Methods Institutional review board approval and patient consent were obtained. Gynecologic oncology patients were identified from our institution's cryotherapy database from August 2003 to August 2007. Cryotherapy was performed with 2.4?mm diameter probes (Endocare, Irvine, CA) with ultrasound or computerized tomography (CT) guidance under conscious sedation and local anesthesia. Follow-up was conducted by imaging studies and clinical encounters, using Response Evaluation Criteria in Solid Tumors (RECIST criteria). Results Twenty-eight ablation sessions were performed for 41 metastatic foci in 15 patients w...
2008-01-01
Free-electron-laser-induced shock-wave control and mechanistic analysis using pulse control
International Nuclear Information System (INIS)
The wavelength of the free electron laser (FEL) in Osaka University can be continuously varied in the range of 5.0-20.0 #mu#m. The FEL has a double-pulse structure, consisting of a train of macropulses of pulse duration 12 #mu#s. Each macropulse contains a train of 330 micropulses of pulse duration 5 ps. The tunability and picosecond pulses afford new medical and biological applications. However, a macropulse of long pulse duration leads to undesirable secondary effects. Precise control of the macropulse duration is essential for the high-precision applications of the FEL. An FEL pulse control system using acousto-optic modulators has been developed to investigate mechanical (shock-wave) effects of the FEL on living tissues. With this system, we have controlled photoinduced shock waves and determine the mechanism of interaction during FEL-induced tissue ablation.
2008-11-01
British Library Electronic Table of Contents (United Kingdom)
Background: Ventricular repolarization (VR) is strongly influenced by heart rate (HR) and autonomic nervous activity, both of which also are important for arrhythmogenesis. Their relative influence on VR is difficult to separate, but might be crucial for understanding while some but not other individuals are at risk for life-threatening arrhythmias at a certain HR. This study was therefore designed to assess the -pure- effect of HR increase by atrial pacing on the ventricular gradient (VG) and other vectorcardiographically (VCG) derived VR parameters during an otherwise unchanged condition. Methods: In 19 patients with structurally normal hearts, a protocol with stepwise increased atrial pacing was performed after successful arrhythmia ablation. Conduction intervals were measured on averag...
2011-01-01
International Nuclear Information System (INIS)
The paper describes novel analytical methods developed for the detection of previous neutron irradiation and reprocessing of illicit nuclear materials, which is an important characteristic of nuclear materials of unknown origin in nuclear forensics. Alpha spectrometry and inductively coupled plasma sector-field mass spectrometry (ICP-SFMS) using solution nebulization and direct, quasi-non-destructive laser ablation as sample introduction were applied for the measurement of trace-level "2"3"2U, "2"3"6U and plutonium isotopes deriving from previous neutron irradiation of uranium-containing nuclear materials. The measured radionuclides and isotope ratios give important information on the raw material used for fuel production and enable confirm the supposed provenance of illicit nuclear material.
2009-04-01
British Library Electronic Table of Contents (United Kingdom)
TP63, a member of the TP53 gene family, is a nuclear marker of myoepithelial cells. Antibody against p63 is frequently used to aid in the diagnosis of prostate carcinoma, as well as in the identification of myoepithelial cells in other tissues including the breast. p63 is also a marker for squamous cell carcinoma. Recently, it was found that all p53 family members are involved in regulating the process of muscle differentiation through the retinoblastoma (RB) protein. Ablation of these p53 family functions blocks the differentiation program and promotes malignant transformation by enabling cooperating oncogenes to transform myoblasts. We therefore studied p63 expression in a number of neoplasms with myogenic differentiation. Immunohistochemical staining for p63 was performed on paraffin se...
2011-01-01
Analysis by mass spectroscope device provided with ion source of induced plasma
International Nuclear Information System (INIS)
This chapter consists of some points including an introduction, the basic parts of mass spectroscope device, sample introduction into the inductively coupled plasma, pneumatic nebuliser, ultrasonic nebuliser, dry gas cloud system, laser ablation unit, inductively coupled plasma-ion source, extraction of ions from ion source, mass analysis, quad-polar mass spectrometer, dual assembly mass spectrometer, mass spectrometer by calculation of time of flight, ion interferences and the ability of resolution, ion counter, working conditions of inductively coupled plasma mass spectroscope device, efficiency of ion transportation in an inductively coupled plasma mass spectroscope device and applications of analysis using mass spectroscope of induced plasma including nuclear, industrial, geological, environmental and archaeological applications, measurement of isotopes ratio and applications in tracing crimes.
Energy Technology Data Exchange (ETDEWEB)
The time-temperature-precipitation diagrams and the resulting time-temperature-sensitization diagrams have been established and are presented for today's current nickel-chromium-molybdenum alloys C-4, C-276, 22 and the recently developed alloy 59. Compared to those materials alloy 625 behaves differently due to its high niobium content. In addition, also the precipitation and sensitization of alloy G-3 has been established. Under the materials considered alloy C-276 has the strongest tendency to precipitate the intermetallics Mu and P together with the carbide M{sub 6}C at intermediate temperatures, followed by the alloys 22 and 59. The tendency to sensitization in the sense of the 50{mu}m (2 mils) intercrystalline penetration criterion when exposed to the ASTM G-28, method A test solution is greatest with alloy C-276, and decreases over the alloys 22, 59 and G-3 to alloy 625. Sensitization is caused by precipitation of the intermetallics {mu} and P and ...
1992-05-01
Development of a stable cobalt-ruthenium Fisher-Tropsch catalyst. Final report
Energy Technology Data Exchange (ETDEWEB)
The reverse micelle catalyst preparation method has been used to prepare catalysts on four supports: magnesium oxide, carbon, alumina- titania and steamed Y zeolite. These catalysts were not as active as a reference catalyst prepared during previous contracts to Union Carbide Corp. This catalyst was supported on steamed Y zerolite support and was impregnated by a pore-filling method using a nonaqueous solvent. Additional catalysts were prepared via pore- filling impregnation of steamed Y zeolites. These catalysts had levels of cobalt two to three and a half times as high as the original Union Carbide catalyst. On a catalyst volume basis they were much more active than the previous catalyst; on an atom by atom basis the cobalt was about of the same activity, i.e., the high cobalt catalysts` cobalt atoms were not extensively covered over and deactivated by other cobalt atoms. The new, high activity, Y zerolite catalysts were not as stable as the ...
1995-02-01
International Nuclear Information System (INIS)
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...
2004-06-01
Radiation-induced segregation in light-ion bombarded Ni-8% Si
Energy Technology Data Exchange (ETDEWEB)
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...
1986-01-01
British Library Electronic Table of Contents (United Kingdom)
Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...
2011-01-01
Electrochemical characterisation of patterned carbon nanotube electrodes on silane modified silicon
Energy Technology Data Exchange (ETDEWEB)
Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...
2008-07-20
Construction and Calibration of the Laser Alignment System for the CMS Tracker
The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...
2006-01-01
A plasma process for the synthesis of cubic-shaped silicon nanocrystals for nanoelectronic devices
International Nuclear Information System (INIS)
Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...
2007-04-21
On the Utility of Antiprotons as Drivers for Inertial Confinement Fusion
Energy Technology Data Exchange (ETDEWEB)
By contrast to the large mass, complexity and recirculating power of conventional drivers for inertial confinement fusion (ICF), antiproton annihilation offers a specific energy of 90MJ/{micro}g and thus a unique form of energy packaging and delivery. In principle, antiproton drivers could provide a profound reduction in system mass for advanced space propulsion by ICF. We examine the physics underlying the use of antiprotons ({bar p}) to drive various classes of high-yield ICF targets by the methods of volumetric ignition, hotspot ignition and fast ignition. The useable fraction of annihilation deposition energy is determined for both {bar p}-driven ablative compression and {bar p}-driven fast ignition, in association with 0-D and 1-D target burn models. Thereby, we deduce scaling laws for the number of injected antiprotons required per capsule, together with timing and focal spot requirements. The kinetic energy of the injected antiproton beam required to ...
2003-10-20
Lung dose calculations at kilovoltage x-ray energies using a model-based treatment planning system
International Nuclear Information System (INIS)
The determination of the dose to organs from diagnostic x rays has become important because of reports of radiation injury to patients from fluoroscopically guided interventional procedures. We have modified a convolution/superposition-based treatment planning system to compute the dose distribution for kilovoltage beams. We computed lung doses using this system and compared them to those calculated using the CDI3 organ dose calculation program. We also computed average lung doses from a simulated radiofrequency ablation procedure and compared our results to published doses for a similar procedure. Doses calculated using this system were an average of 20% lower for AP beams and 7% higher for PA beams than those obtained using CDI3. The ratio of the average dose to the lungs to the skin dose from the simulated ablation procedure ranged from 25% higher to 15% lower than that determined by other authors. Our results show that a treatment planning ...
2001-02-01
The rate-limiting mechanism of transition metal gettering in multicrystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...
1997-04-01
Silicon purification melting for photovoltaic applications
Energy Technology Data Exchange (ETDEWEB)
The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...
2000-04-01
Energy Technology Data Exchange (ETDEWEB)
Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...
1980-03-01
A kinetic and mechanistic study of the oxidation of silicon- and thin metal silicide layers
International Nuclear Information System (INIS)
The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...
British Library Electronic Table of Contents (United Kingdom)
In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...
2006-01-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
1985-08-01
Transient-enhanced diffusion during furnace and rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Energy Technology Data Exchange (ETDEWEB)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
1998-05-01
The fraction of substitutional boron in silicon during ion implantation and thermal annealing
International Nuclear Information System (INIS)
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
1998-05-01
The formation of aluminum phosphide in aluminum melt treated with an Al-Fe-P inoculant addition
Energy Technology Data Exchange (ETDEWEB)
The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)
2001-04-01
Solar thermophotovoltaic (STPV) system with thermal energy storage
Energy Technology Data Exchange (ETDEWEB)
A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}
1996-02-01
Schottky barrier modulation on silicon nanowires
Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.
2007-03-26
SSRM characterisation of FIB induced damage in silicon
International Nuclear Information System (INIS)
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
2008-03-01
Response characteristics of base-isolated structure with silicone rubber bearings
International Nuclear Information System (INIS)
More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992
1993-08-15
Properties of low residual stress silicon oxynitrides used as a sacrificial layer
Energy Technology Data Exchange (ETDEWEB)
Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.
2000-01-04
Prediction of transient-enhanced diffusion during rapid thermal annealing of ion-implanted silicon
International Nuclear Information System (INIS)
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
1985-03-01
International Nuclear Information System (INIS)
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
1999-01-01
Photoluminescence in large fluence radiation irradiated space silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)
1997-03-01
Nano silicon for lithium-ion batteries
Energy Technology Data Exchange (ETDEWEB)
New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)
2006-11-12
A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).
1977-01-01
Energy Technology Data Exchange (ETDEWEB)
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
1998-09-01
International Nuclear Information System (INIS)
The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
Energy Technology Data Exchange (ETDEWEB)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator
International Nuclear Information System (INIS)
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
2004-12-15
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
A Versatile Evaporative Cooling System Designed for Use in an Elementary Particle Detector
British Library Electronic Table of Contents (United Kingdom)
An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...
2007-01-01
Wafer and Solar Cell Characterization by GT-PVSCAN6000
The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.
2002-08-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
Energy Technology Data Exchange (ETDEWEB)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
1997-11-01
Transient enhanced diffusion of boron in silicon: The interstitial flux
International Nuclear Information System (INIS)
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...
1996-12-02
Thermal stability and acid resistance of aluminosilicophosphate zeolites
Energy Technology Data Exchange (ETDEWEB)
By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.
1987-04-01
Energy Technology Data Exchange (ETDEWEB)
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...
1998-07-01
Observed energy dependence of Fano factor in silicon at hard X-ray energies
Energy Technology Data Exchange (ETDEWEB)
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
1999-03-01
NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference
Energy Technology Data Exchange (ETDEWEB)
Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.
1993-05-01
Method of restoring degraded solar cells
Energy Technology Data Exchange (ETDEWEB)
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
1983-01-01
Metallization of large silicon wafers. Final report
A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
Energy Technology Data Exchange (ETDEWEB)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...
2004-11-15
Kinetic Monte Carlo (KMC) simulations for boron diffusion in ion-implanted crystalline materials
International Nuclear Information System (INIS)
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...
2004-11-01
J4P Evaluation of Externally Heated Pulsed MPD Thruster Cathodes
twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...
Energy Technology Data Exchange (ETDEWEB)
The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...
1992-08-28
Investigations into the nature of a silicoaluminophosphate with the faujasite structure
Energy Technology Data Exchange (ETDEWEB)
The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.
1987-04-29
Energy Technology Data Exchange (ETDEWEB)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...
2002-01-01
Energy Technology Data Exchange (ETDEWEB)
Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.
2004-06-30
International Nuclear Information System (INIS)
Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.
2004-06-30
INVESTIGATION OF GLASS-METAL COMPOSITE ...
... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...
1957-09-01
Evolution of surface roughness in silicon X-ray mirrors exposed to a low-energy ion beam
International Nuclear Information System (INIS)
The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...
2010-05-01
International Nuclear Information System (INIS)
Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...
1984-01-01
Energy Technology Data Exchange (ETDEWEB)
An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.
1982-01-01
Chromized/siliconized diffusion coatings for iron-base alloy by pack cementation
Energy Technology Data Exchange (ETDEWEB)
This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.
1991-09-01
Changes in colonic motility induced by sennosides in dogs: evidence of a prostaglandin mediation.
UK PubMed Central (United Kingdom)
The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available
1988-09-01
International Nuclear Information System (INIS)
An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.
1989-09-01
2005 NASA Executive Capability Roadmap Report
ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...
.N& 21762 - NASA Technical Report Server (NTRS)
of the supplier of pulled p-type silicon material. of G-6 and E 8 centers irradiated in the 1 t o 3 MeV range. tions w i l l be performed using the General ...
Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon
Energy Technology Data Exchange (ETDEWEB)
We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
1998-09-18
Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells
Energy Technology Data Exchange (ETDEWEB)
This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.
1991-09-23
Energy Technology Data Exchange (ETDEWEB)
Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.
1996-12-01
Reactive sticking coefficients for silane and disilane on polycrystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Reactive sticking coefficients (RSCs) were measured for silane and disilane on polycrystalline silicon for a wide range of temperature and flux (pressure) conditions. The data were obtained from deposition-rate measurements using molecular beam scattering and a very low-pressure cold-wall reactor. The RSCs have nonlinear Arrhenius temperature dependencies and decrease with increasing flux at low (710 /sup 0/C) temperatures. Several simple models are proposed to explain these observations. The results are compared with previous studies of the SiH/sub 4//Si(s) reaction and low-pressure chemical vapor deposition-rate measurements.
1988-04-15
Polysilicon TFT fabrication on plastic substrates
Energy Technology Data Exchange (ETDEWEB)
Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).
1997-08-06
Energy Technology Data Exchange (ETDEWEB)
One of the major scientific and technological challenges for the production of flexible organic electronic devices is the device protection against atmospheric molecule permeation, which causes corrosion reducing its operation and lifetime. In this work, Spectroscopic Ellipsometry has been implemented to investigate the influence of silicon dioxide nanoparticles on the optical properties of hybrid polymers. The spectra analysis revealed valuable information about the electronic and vibrational response as well as the cross-linking mechanisms of these materials. The correlation of the optical properties with the synthesis parameters and the barrier response will contribute towards their optimization in order to be used as high barrier coatings for flexible organic electronics applications.
2009-10-01
Observation of a surface peak in low energy implant depth profiles in silicon
Energy Technology Data Exchange (ETDEWEB)
In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.
1984-03-01
Energy Technology Data Exchange (ETDEWEB)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for {l_brace}311{r_brace} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1997-11-01
International Nuclear Information System (INIS)
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
1996-12-02
Measurement of liquid xenon scintillation from heavy ions using a silicon photodiode
Energy Technology Data Exchange (ETDEWEB)
Scintillation light in liquid xenon excited by 100 MeV/n Al ions was detected with a home-made silicon photodiode. The diameter of the photodiode was 2 inch. The effective quantum efficiency was observed to be 22% for the wavelength of liquid xenon scintillation light (170 nm), while the effective quantum efficiency for 5.486 MeV alpha-particle excitation was 44%. An energy resolution of 0.5% rms was achieved for the energy deposition of 2.5 GeV in liquid xenon using a fast preamplifier ({approx equal} 20 ns). (orig.).
1991-11-15
Laser-assisted solar cell metallization processing. Quarterly report No. 6, March 1-June 30, 1985
Energy Technology Data Exchange (ETDEWEB)
A new lens was installed in the laser; the laser power was lowered and solar cells were made at different power levels. The concentration of the silver neodecanoate solution was changed to reduce linewidth. A cell fabrication run was completed using low-resistivity float-zone silicon. Experiments were initiated to investigate the use of titanium organometallic film, which not only forms an AR coating with a 400/sup 0/C hard bake, but may also help in bypassing front-metal evaporation because of high-reactivity of Ti with silicon. Progress in these areas is discussed.
1985-07-25
Development of low cost contacts to silicon solar cells
The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.
1980-01-01
Combining laser chemical processing and aerosol jet printing: a laboratory scale feasibility study
British Library Electronic Table of Contents (United Kingdom)
Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H{sub 2}O system at 350degC was constructed and the solubilities of NiO, Cr{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC susceptibility of alloy 800 ...
2001-05-01
International Nuclear Information System (INIS)
To clarify the acidic and alkaline Intergranular Stress Corrosion Cracking (IGSCC) mechanism of thermally treated alloy 690 (alloy 690 TT) and shot peened alloy 800 (alloy 800 SP), C-ring tests were conducted in deaerated HCl solutions and in deaerated NaOH solutions at 350degC, compared with the acidic and the alkaline IGSCC susceptibilities of mill-annealed alloy 600 (alloy 600 MA), full-sensitized one (alloy 600 FS) and thermally treated one (alloy 600 TT). Grain boundary characteristics, such as chromium depleted zone and chromium carbide precipitation, were examined using modified Huey test and Transmission Electron Microscopy. Potential-pH diagram for Ni, Cr, Fe-H_2O system at 350degC was constructed and the solubilities of NiO, Cr_2O_3 and Fe_3O_4 were also calculated to evaluate the stability of oxide films which were formed on the surfaces of alloy 690, 800 and 600. Under the acidic condition, the IGSCC susceptibility of alloy 800 SP was high. The ...
2001-05-01
Energy Technology Data Exchange (ETDEWEB)
Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...
1983-12-15
Molecular dynamics studies of silicon ion implantation
Energy Technology Data Exchange (ETDEWEB)
Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is very small (less than 10% of the binary ...
1994-12-31
Light-weight free-standing carbon nanotube-silicon films for anodes of lithium ion batteries.
Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...
2010-07-27
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
Energy Technology Data Exchange (ETDEWEB)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 {mu}m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface region between electroplated chromium coating ...
2003-02-28
Transmission electron microscopy study of plasma nitriding of electroplated chromium coating
International Nuclear Information System (INIS)
In this paper, the influence of plasma nitriding at temperature 720 deg. C for 20 h on the surface microstructure and interface microstructure of electroplated chromium coating was investigated. In these conditions, interdiffusion, mixing and reaction phenomena of elements originating from the substrate and coating material are more likely to occur, thus increasing the bonding strength between the coating and carbon steel substrate. The change of the structures from the substrate side to the coating surface, and the effect of the substrate steel on the interface structure were studied by cross-sectional transmission electron microscope observation (XTEM). The nitride layer formed on the surface was analyzed by X-ray diffraction method (XRD). After treatment at above conditions a 6-7 #mu#m thick nitride compound layer was formed in surface region and the same thick carbide compound layer was also formed in the interface region between electroplated chromium coating ...
2003-02-28
Energy Technology Data Exchange (ETDEWEB)
Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are {gamma}-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni{sub 3} Al {gamma}' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles.
2008-08-11
International Nuclear Information System (INIS)
Microstructure characterization is important for controlling the quality of laser welding. In the present work, a detailed microstructure characterization by transmission electron microscopy was carried out on the laser welding cast Ni-based superalloy K418 turbo disk and alloy steel 42CrMo shaft and an unambiguous identification of phases in the weldment was accomplished. It was found that there are #gamma#-FeCrNiC austenite solid solution dendrites as the matrix, (Nb, Ti) C type MC carbides, fine and dispersed Ni_3 Al #gamma#' phase as well as Laves particles in the interdendritic region of the seam zone. A brief discussion was given for their existence based on both kinetic and thermodynamic principles.
2008-08-11
Energy Technology Data Exchange (ETDEWEB)
Fatigue tests were accomplished with a series of specimens doped with trace elements of a hardened Fe-Ni-Cr alloy, cast and hardened with intermetallic phases for determining the influence of these elements on the high temperature strength properties. The results of extensive fatigue tests show that even small contents of Te, Bi, Se, Pb, Tl and Zn considerably influence the life and creep processes especially after longer running periods, when added individually or combinedly. In contrast to this, the fatigue ductility is reduced by trace element additions even with short running periods. The order in which the metallic trace elements influence the fatigue properties nearly correlates with earlier work concerning Ni- and Co-superalloys. (orig.)
1993-01-01
International Nuclear Information System (INIS)
The effect of W and V on the high temperature strength properties of 12%Cr-15%Mn austenitic steels was studied from the view point of precipitation hardening and internal stress. The contribution of W addition to the tensile and creep-rupture strength was not so large. By contrast the combined addition of W and V increased the strength considerably. These are resulted from the precipitation of fine vanadium nitride (VN) within grains and the enhancement of M_2_3C_6 type carbide precipitation at grain boundaries. The V added material had large internal stress value which is considered to be due to dislocation movement disturbed by fine vanadium nitrides. (author).
Surface durability of WC/C-coated case-hardened steel gear
British Library Electronic Table of Contents (United Kingdom)
The purpose of this study is to investigate the influence of tungsten carbide/carbon (WC/C) coating on the surface durability of casehardened steel gear. Two kinds of WC/C coatings were deposited on the ground gear pair made of chromium molybdenum steel with carburizing and quenching. One is the conventional WC/C coating, and the other is WC/C coating with about 1 ?m CrN interlayer. Here, the WC/C-coated test pinion and the WC/C-coated one with CrN interlayer are represented by WT and ST, respectively. Non-coated test pinion is represented by NT. The surface roughness along the tooth profile direction of WT and ST was almost the same as that of NT. A spur gear test was carried out with an IAE power circulating type gear test rig under EP gear oil lubricating condition. The fatal failure mo...
2010-01-01
International Nuclear Information System (INIS)
A novel adhesive for carbon materials composed of phenol-formaldehyde resin, boron carbide and fumed silica, was prepared. The adhesive property of graphite joints bonded by the above adhesive treated at high-temperatures was tested. Results showed that the adhesive was found to have outstanding high-temperature bonding properties for graphite. The adhesive structure was dense and uniform even after the graphite joints were heat-treated at 1500 deg. C. Bonding strength was 17.1 MPa. The evolution of adhesive structure was investigated. The results indicated that the addition of the secondary additive, fumed silica, improved the bonding performance greatly. Borosilicate phase with better stability was formed during the heat-treatment process, and the volume shrinkage was restrained effectively, which was responsible for the satisfactory high-temperature bonding performance of graphite.
2006-01-01
Scientific report 1997; Rapport scientifique 1997
Energy Technology Data Exchange (ETDEWEB)
In this book are found technical and scientific papers on the main works of the Direction of the Fuel Cycle (DCC) in France. The study fields are: the up-side of the nuclear fuel cycle with theoretical studies (plasma simulation) and technological developments and instrumentation (lasers diodes, carbides plasma projection, carbon 13 enrichment); the down-side nuclear fuel cycle with theoretical studies (ion Eu{sup 3+} complexation simulation, decay simulation, uranium and plutonium diffusion study, electrolyser operating simulation), scenario studies ( recycling, wastes management), experimental studies; dismantling and cleaning (soils cleaning, surface-active agent for decontamination, fault tree analysis); analysis with expert systems and mass spectrometry. (A.L.B.)
1998-07-01
Particulate composites in the TiC-TiYTZP system
International Nuclear Information System (INIS)
Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)
2004-09-12
Nuclear magnetic resonance study of La_3X compounds and related phases
International Nuclear Information System (INIS)
Normal state nuclear magnetic resonance studies of the La_3In, La_3Tl compounds have been made in order to investigate the origin of the large temperature-dependent magnetic susceptibility. It is possible to analyse the different contributions to the susceptibility using Knight-shift and relaxation time T_1 measurements of In"1"1"5 and Tl"2"0"5 nuclei. The exchange enhancement of the spin-susceptibility chisub(pd) is of the same order as that found in A-15 compounds and the strong temperature-dependence of chi(T) is attributed to the presence of a peak in the electronic density of states near the Fermi level. The variation of the Knight-shift in the ternary alloys La_3Xsub(1-y)Xsub(y)sup(') is analogous to that observed in the corresponding La_3X phases, on the other hand the Knight-shift in the carbides La_3XC is temperature independent. (author).
Modeling the Spray Forming of H13 Steel Tooling
British Library Electronic Table of Contents (United Kingdom)
On the basis of a numerical model, the temperature and liquid fraction of spray-formed H13 tool steel are calculated as a function of time. Results show that a preheated substrate at the appropriate temperature can lead to very low porosity by increasing the liquid fraction in the deposited steel. The calculated cooling rate can lead to a microstructure consisting of martensite, lower bainite, retained austenite, and proeutectoid carbides in as-spray-formed material. In the temperature range between the solidus and liquidus temperatures, the calculated temperature of the spray-formed material increases with increasing substrate preheat temperature, resulting in a very low porosity by increasing the liquid fraction of the deposited steel. In the temperature region where austenite decomposit...
2007-01-01
Microstructure and properties of ultrafine WC-10Co composites with chemically doped VC
British Library Electronic Table of Contents (United Kingdom)
Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formulation. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor ...
2011-01-01
Microstructural aspects of the corrosion of Alloy 800
International Nuclear Information System (INIS)
Transmission electron microscopy studies on solution-annealed Alloy 800 revealed small (100-200 nm), spherical-shaped titanium carbide (face centered cubic structure) and large (200 nm-5 #mu#m), faceted titanium nitride (hexagonal structure) particles randomly distributed in the austenite matrix. The volume fraction of former particles was found to be greater than that of the latter. Corrosion studies of the alloy in acidic, chlorides and acidic chloride environments at room temperature indicated that the passivity of Alloy 800 was adversely affected by the addition Cl"- ions. X-ray photoelectron spectroscopy revealed that the surface film formed on the alloy at the onset of passivity consisted of Cr"3"+ (as Cr_2O_3), without any Fe"3"+/Fe"2"+ or Ni"2"+. Scanning electron microscopy studies indicated initiation of pitting at large, faceted particles, not at small, spherical-shaped ones.
2004-12-01
International Nuclear Information System (INIS)
Intergranular corrosion (IGC) resistance of types 304LN and 316LN stainless steels (SS) thermally aged at 823, 873, and 923 K for various durations was assessed by ASTM A262 practice A test (electrolytic etch test) and electrochemical potentiodynamic reactivation (EPR) test. The results indicated that the type 316LN SS has significantly improved IGC resistance compared to 304LN SS. Based on the results of these tests, time-temperature-sensitization (TTS) diagrams were developed for both alloys. The secondary precipitates formed during thermal aging treatments were electrochemically extracted and analyzed by X-ray diffraction (XRD) to determine the types of precipitates formed during the aging treatments. The results indicated that the precipitates were mostly of M_2_3C_6 carbides.
1996-01-01
International Nuclear Information System (INIS)
Intergranular corrosion (IGC) resistance of types 304LN and 316LN stainless steels (SS) thermally aged at 823, 873, and 923 K for various durations was assessed by ASTM A262 practice A test (electrolytic etch test) and electrochemical potentiodynamic reactivation (EPR) test. The results indicated that the type 316LN SS has significantly improved IGC resistance compared to 304LN SS. Based on the results of these tests, time-temperature-sensitization (TTS) diagrams were developed for both alloys. The secondary precipitates formed during thermal aging treatments were electrochemically extracted and analyzed by X-ray diffraction (XRD) to determine the types of precipitates formed during the aging treatments. The results indicated that the precipitates were mostly of M_2_3C_6 carbides.
International Nuclear Information System (INIS)
Presented in this report are the quantitative and qualitative aspects of the more than 5,800 applications of Grafoil on-plant. The subject all-graphite product was originally made by the Union Carbide Corporation. Its utilization in the forms of valve packing, gasketing and sealant tapes for leak repair and prevention on-plant since March 1970 is marked with typical zero-leak results. For all practical purposes, the successful results with Grafoil implementation indicate an unqualified control of leakage problems that began in 1967 with the V-11 and V-12 valves in the primary system of N Reactor. Meaningfully, the accruals of savings with existing and future applications shall continue to be incalculable in personnel exposure, maintenance, and capital. Inherent in the savings are the devised methodology and innovative developments coordinately employed in resolving the leak repair problems.
Effects of modification on microstructure and properties of ultrahigh carbon (1.9wt.% C) steel
British Library Electronic Table of Contents (United Kingdom)
The effects of a modifier that contains Rare Earths (RE), low melting point alloy (Al-Bi-Sb) and Ca-Si alloy on an ultrahigh carbon steel containing 1.9wt.% C were studied. Microstructure characterization was carried out with optical microscopy (OM) and scanning electronic microscopy (SEM) combined with energy-dispersive spectrometry (EDS). Upon modification, the continuous eutectic carbide network structure was broken up and changed to a partly isolated and finer blocky structure in the as-cast alloy. Differential scanning calorimetry (DSC) revealed that the eutectoid temperature increased and the eutectic temperature decreased for the modified alloy. Modification also improved the impact toughness of the tempered steel, with a significant increase from 6.5 to 12.6Jcm^-^2, despite the har...
2011-01-01
All sliding element journal bearing rock bit
Energy Technology Data Exchange (ETDEWEB)
For years rock bit performance has been progressively improved by many innovative changes to the design of both the bit cutting structure and the bearing. The changes have offered increased footage per bit and reduced cost per foot of hole through longer bit life and/or faster penetration rate. Efforts to assist the industry in drilling deeper thru hard abrasive rocks such as cherts of West Texas, conglomerated of the Rockies and bromides of Oklahoma led to a major breakthrough in rock bit design - the development of the tungsten carbide cutting structure. When properly applied the bit far exceeded that of the non-sealed ball and roller bearing being used at the time. The bearing failure mode was one of severe race spalling and abrasive wear influenced by the drilling fluid entering the bearing.
1983-08-01
A semi-micro combustion assembly for the determination of carbon and hydrogen in actinide compounds
International Nuclear Information System (INIS)
A rapid combustion unit (Baird and Tatlock) incorporating a combustion chamber provided with baffle plates for complete combustion of the sample without the use of a catalyst has been assembled in a glove box for the determination of carbon and hydrogen in actinide complexes. The unit has been modified employing a movable electric furnace and a proportional temperature controller, for decomposition of the sample at desired heating rates. The set-up was standardised employing various reference materials such as benzoic acid, acetanilide, sulphanilamide and 1-chloro 2:4 dinitrobenzene and the standard deviation in the measurements evaluated. It has also been used successfully for the determination of carbon in uranium carbide and carbon and hydrogen in some uranyl-#beta#-diketone-amine N-oxide complexes and in plutonium(IV) oxalate. (auth.).
1982-09-01
A semi-micro combustion assembly for the determination of carbon and hydrogen in actinide compounds
International Nuclear Information System (INIS)
A rapid combustion unit (Baird and Tatlock) incorporating a combustion chamber provided with baffle plates for complete combustion of the sample without the use of a catalyst has been assembled in a glove box for the determination of carbon and hydrogen in actinide complexes. The unit has been modified employing a movable electric furnace and a proportional temperature controller, for decomposition of the sample at desired heating rates. The set-up was standardised employing various reference materials such as benzoic acid, acetanilide, sulphanilamide and 1-chloro 2:4 dinitrobenzene and the standard deviation in the measurements evaluated. It has also been used successfully for the determination of carbon in uranium carbide and carbon and hydrogen in some uranyl-#beta#-diketone-amine N-oxide complexes and in plutonium(IV) oxalate. (auth.).
2006-09-18
A review of the structural characteristics of alloy 800
International Nuclear Information System (INIS)
The published literature is reviewed and supplemented by current information from the author's laboratory, to show the influence of various compositional, heat treatment and thermomechanical factors on the structural characteristics of Alloy 800. The features discussed include carbon, aluminium, titanium and boron, solution treatment, ageing treatments with and without applied strain, and cold working. Examples of the aspects reviewed include the effect of heat treatment and service or testing temperature on the austenite grain size, and the relative importance of M_2_3C_6 and TiC, the influence of carbon level on gamma prime, the effect of residual or steady stress combined with time at temperature on changes in carbide or gamma prime morphology, and on the appearance of sigma or other intermetallic phases. The questions posed by these features are discussed generally, in terms of their effect on the mechanical properties at ambient and elevated temperatures and ...
A micro-alloyed ferritic steel strengthened by nanoscale precipitates
British Library Electronic Table of Contents (United Kingdom)
A ferritic steel with finely dispersed precipitates was investigated to reveal the fundamental strengthening mechanisms. The steel has a yield strength of 760MPa, approximately three times higher than that of conventional Ti-bearing high strength hot-rolled sheet steels, and its ultimate tensile strength reaches 850MPa with an elongation-to-failure value of 18%. Using energy dispersive X-ray spectroscopy (EDXS) and transmission electron microscope (TEM), fine carbides TiC with an average diameter of 10nm were observed in the ferrite matrix of the 0.08%Ti steel, and some cubic M23C6 precipitates were also observed at the grain boundaries and the interior of the grains. The finely dispersed TiC precipitates in the matrix provide matrix strengthening. The estimated magnitude of precipitation ...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
SommarioScopo In questo studio riportiamo i dati relativi all'ablazione percutanea con Radiofrequenza (RF) di HCC e trombosi neoplastica dei vasi portali. Pazienti e metodi Dieci pazienti (pz) cirrotici, 7 maschi e 3 femmine, eta media 68 anni, con 10 noduli di HCC e trombosi neoplastica dei vasi portali sono stati sottoposti ad ablazione percutanea con RF del trombo neoplastico e dell'HCC. La RF veniva ritenuta efficace quando alla TC con mdc si osservava la necrosi completa dell'HCC e al Color Doppler si osservava la ricanalizzazione completa dei vasi portali. Risultati La necrosi completa dell'HCC e la ricanalizzazione completa dei vasi portali si osservava in 7 (70%) dei 10 pazienti. Nei rimanenti 3 (30%) la necrosi dell'HCC e la ricanalizzazione dei vasi portali non risultavano comple...
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
The Zollinger-Ellison syndrome (ZES) is taken as an example of the diagnostic and therapeutic strategy in gastro-entero-pancreatic endocrine tumours, given the standard characteristics of this procedure, whatever the nature of the primitive tumour. Management of ZES includes: anatomical localization of gastrinoma and of possible metastases, in 60 % of cases this step conditioning therapeutic indications and chances of cure; search of a type 1-multiple endocrine neoplasia (MEN A), in 25 % of cases; therapeutic indications: ablative surgery with curative intent in case of gastrinoma and of resectable liver metastases, palliative treatment otherwise: anti-secretory drugs, somatostatin analogues, chemotherapy and interferon {alpha}; long-term follow-up of patients with resected tumour. At each step, somatostatin receptor scintigraphy with indium 111-pentetreotide does play a pivotal role. (author). 110 refs.
1996-12-31
Energy Technology Data Exchange (ETDEWEB)
Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.
1994-10-17
High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode
British Library Electronic Table of Contents (United Kingdom)
Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
In nuclear fuel, in approximately one quarter of the fissions, one of the two formed fission products is gaseous. These are mainly the noble gases xenon and krypton with isotopes of xenon contributing up to 90% of the product gases. These noble fission gases do not combine with other species, and have a low solubility in the normally used uranium oxide matrix. They can be dissolved in the fuel matrix or precipitate in nanometer-sized bubbles within the fuel grain, in micrometer-sized bubbles at the grain boundaries, and a fraction also precipitates in fuel pores, coming from fuel fabrication. A fraction of the gas can also be released into the plenum of the fuel rod. With increasing fission, and therefore burn-up, the ceramic fuel material experiences a transformation of its structure in the 'cooler' rim region of the fuel. A subdivision occurs of the original fuel grains of few microns size into thousands of small grains of sub-micron sizes. Additionally, larger ...
2008-07-01
Energy Technology Data Exchange (ETDEWEB)
Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While NbTe{sub 2} films have been realized by sputtering, it is the first time that Nb{sub 5}Te{sub 4} films have been deposited.
1996-12-31
Calibration-Free Laser-Induced Breakdown Spectroscopy: State of the art
Energy Technology Data Exchange (ETDEWEB)
The aim of this paper is offering a critical review of Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS), the approach of multi-elemental quantitative analysis of LIBS spectra, based on the measurement of line intensities and plasma properties (plasma electron density and temperature) and on the assumption of a Boltzmann population of excited levels, which does not require the use of calibration curves or matrix-matched standards. The first part of this review focuses on the applications of the CF-LIBS method. Quantitative results reported in the literature, obtained in the analysis of various materials and in a wide range of experimental conditions, are summarized, with a special emphasis on the departure from nominal composition values. The second part is a discussion of the simplifying assumptions which lie at the basis of the CF-LIBS algorithm (stoichiometric ablation and complete atomization, thermal equilibrium, homogeneous plasma, thin ...
2010-01-15
Calibration-Free Laser-Induced Breakdown Spectroscopy: State of the art
International Nuclear Information System (INIS)
The aim of this paper is offering a critical review of Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS), the approach of multi-elemental quantitative analysis of LIBS spectra, based on the measurement of line intensities and plasma properties (plasma electron density and temperature) and on the assumption of a Boltzmann population of excited levels, which does not require the use of calibration curves or matrix-matched standards. The first part of this review focuses on the applications of the CF-LIBS method. Quantitative results reported in the literature, obtained in the analysis of various materials and in a wide range of experimental conditions, are summarized, with a special emphasis on the departure from nominal composition values. The second part is a discussion of the simplifying assumptions which lie at the basis of the CF-LIBS algorithm (stoichiometric ablation and complete atomization, thermal equilibrium, homogeneous plasma, thin ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
A newly constructed Fourier transform microwave spectrometer has been used to record the pure rotational spectra of four isotopomers of SrS ({sup 88}Sr{sup 32}S, {sup 87}Sr{sup 32}S, {sup 86}Sr{sup 32}S, and {sup 88}Sr{sup 34}S) between 6 and 26 GHz. The molecules were produced by reacting laser ablated strontium with carbonyl sulfide (0.1% in argon). Pure rotational transitions in the ground, first and second vibrational states have been observed. The data set has enabled a multi-isotopomer fit. Born-Oppenheimer breakdown terms for both atoms have been determined. The {sup 87}Sr nuclear quadrupole coupling constant in {sup 87}Sr{sup 32}S has been determined for the first time.
2007-12-06
Application of spectroscopic techniques for the study of paper documents: A survey
International Nuclear Information System (INIS)
For many centuries paper was the main material for recording cultural achievements all over the world. Paper is mostly made from cellulose with small amounts of organic and inorganic additives, which allow its identification and characterization and may also contribute to its degradation. Prior to 1850, paper was made entirely from rags, using hemp, flax and cotton fibres. After this period, due to the enormous increase in demand, wood pulp began to be commonly used as raw material, resulting in rapid degradation of paper. Spectroscopic techniques represent one of the most powerful tools to investigate the constituents of paper documents in order to establish its identification and its state of degradation. This review describes the application of selected spectroscopic techniques used for paper characterization and conservation. The spectroscopic techniques that have been used and will be reviewed include: Fourier-Transform Infrared spectroscopy, Raman spectroscopy, Nuclear Magnetic ...
2009-06-01
The aim of this work was to study the possibility of producing a fast switching optical thin film device to react to laser radiation in the visible/near infrared region of the spectrum. The switching mechanism was to be thermally driven. A computer program was written to enable the effects of changes of the refractive index of a component of a multilayer thin film stack to be modelled. Attempts to use the phase transition in vanadium dioxide were unsuccessful because, in the spectral region of interest, the 'open-state' absorption was too great. A class of materials known as 'the bronzes' was identified as being potentially useful. Attempts were made to produce thin films of bronze compounds of vanadium, tungsten and molybdenum by the techniques of conventional thermal evaporation and laser ablation for further studies. The former technique appeared to suffer from problems of decomposition of the source material. The latter technique showed greater promise although ...
1995-01-01
Energy Technology Data Exchange (ETDEWEB)
The purpose of this paper is to report the personal experience with helical CT evaluation of hepatocellular carcinoma treated with various percutaneous interventional procedures. From December 1996 to September 1998 it were examined with helical CT 41 patients (73 nodules in all) with hepatocellular carcinoma treated with percutaneous ablation therapies: conventional ethanol injection in 18 subjects (31 nodules), one-shot ethanol injection 3 (8 nodules), radiofrequency thermal ablation in 16 (25 nodules), and combined chemo embolization and ethanol injection in 4 (9 nodules). CT performed was 4-27 days after the last session, acquiring biphasic volumetric images in 14 patients and triphasic volumetric images in 27. A second treatment with subsequent CT study was performed for 28 lesions; 15 underwent 3 serial studies and 6 underwent 4 studies. Compared with pretreatment findings, the diameter was unchanged in 62% of the nodules and increased in ...
1999-12-01
International Nuclear Information System (INIS)
A study of the magnetic properties and the heat capacity as functions of temperature and magnetic field of two ternary carbides RNiC_2, where R=La and Ce, confirms that LaNiC_2 becomes superconducting at T_c=2.7thinspK, and that CeNiC_2 orders antiferromagnetically below 18thinspK. LaNiC_2 is a conventional superconductor with a critical field of 900 Oe at T=2thinspK. CeNiC_2 obeys the Curie-Weiss law between 50 and 300thinspK showing the nearly full Ce"3"+ magnetic moment, p_e_f_f=2.47(1)#mu#_B, and has a negative paramagnetic Weiss temperature #THETA#_p=-18.3(8)thinspK. A low net magnetic moment in the ordered state, which is far from saturation in a magnetic field of 5thinspT, is consistent with an antiferromagnetic ground state. Below 20thinspK CeNiC_2 shows multiple-step magnetic transitions at 18, 10, and 2.4thinspK. Both LaNiC_2 (in the normal state) and CeNiC_2 have the same electronic heat capacity, #gamma#=6.5(2)thinspmJ/molthinspK"2, which is typical for ...
1998-07-01
International Nuclear Information System (INIS)
Pitting crevice and intergranular corrosion resistances of titanium-modified low-carbon austenitic stainless steel with a nominal composition of 15% Cr, 15% Ni, 0.24% Ti and 2.5% Mo were found superior to conventional type 316 SS. Potentiodynamic anodic polarization studies in a neutral chloride medium (0.5M NaCl solution) and the immersion studies in boiling solution containing (by wt%) 11% H_2SO_4 + 3% HCl + 1% CuCl_2 + 1% FeCl_3 for 24 h showed higher critical pitting and crevice potentials and lower corrosion rate values respectively. The elemental composition across the pit sites was also determined by EPMA analysis. Sensitization studies carried out by following ASTM A262 practices A and E and electrochemical potentiokinetic reactivation (EPR) tests on this alloy heat treated at 923 K for 1 and 50 h showed a better resistance to intergranular corrosion than that for conventional type 316 SS. From the results available, the most likely reason for the improvement in the localized ...
Synthesis of Si nanowires for MEMS cantilever sensor applications
We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...
2004-12-01
Novel silicon fabrication process for high-aspect-ratio micromachined parts
Energy Technology Data Exchange (ETDEWEB)
Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...
1995-08-01
International Nuclear Information System (INIS)
In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon ...
International Nuclear Information System (INIS)
This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...
Turning the Moon into a Solar Photovoltaic Paradise
Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar glass substrates, evaporated lunar regolith thin films (anti-reflect coatings and ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of ...
2009-10-15
TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams
International Nuclear Information System (INIS)
A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement ...
2010-03-11
We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under which different types ...
2008-05-01
Quality Management for Neutron Transmutation Doping of Silicon Ingot in HANARO
Energy Technology Data Exchange (ETDEWEB)
By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. Excellent irradiation uniformity and a ...
2007-10-15
This document concerns the proposal to negotiate an amendment to an existing contract for the supply of thick 6 inch silicon micro-strip sensors for the CMS tracker. For the reasons explained in this document, the Finance Committee is invited to approve an amendment to an existing contract with HAMAMATSU PHOTONICS (CH) for the supply of 7 000 thick 6 inch silicon micro-strip sensors for the CMS tracker, for an amount of 3 248 000 euros (5 131 840 Swiss francs), not subject to revision, with an option for up to 11 000 additional sensors, for a maximum amount of 4 708 000 euros (7 438 640 Swiss francs), not subject to revision, bringing the total maximum amount of the amendment to 7 956 000 euros (12 570 480 Swiss francs) not subject to revision. This total maximum amount will be added to the initial contract amount of 415 835 000 Japanese yen (4 879 824 Swiss francs), not subject to revision. The amounts in Swiss francs have been calculated ...
2004-01-01
Process model for carbothermic production of silicon metal
Energy Technology Data Exchange (ETDEWEB)
This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are ...
1995-09-12
Modeling key cupola reactions: Behavior of carbon, silicon and manganese
Energy Technology Data Exchange (ETDEWEB)
In the present study, models of key chemical processes governing the compositions of the tapped metal from the cupola on the basis of physico-chemical fundamentals have been developed. As evident from the literature survey, the investigations conducted in the past have focused their attention on one phenomenon at a time; for example, a particular chemical reaction, measurement of gas composition or the temperature distribution inside a cupola. Notwithstanding the importance of these studies and their contribution toward the understanding of cupola operation, mathematical models of key chemical processes and their interdependence must be investigated to obtain a complete insight into the various interlinked phenomena occurring inside a cupola. For example, the oxidation of the metallic charge leads to the formation of iron oxide which influences the final content of elements such as silicon, manganese and carbon. The processes considered in this study are oxidation ...
1991-01-01
Mechanism for transient-enhanced diffusion in ion-implanted silicon
International Nuclear Information System (INIS)
High-dose ion implantation followed by solid-phase-epitaxial (SPE) growth is now a well-established technique for the production of supersaturated silicon alloys. However, these alloys also contain a high supersaturation of silicon interstitials, which give rise to transient, greatly enhanced dopant diffusion with subsequent heating. In this contribution, the authors present a study of a series of Si-Sb alloys of various concentrations which were made by Sb implantation under various conditions to deduce the origin of the observed transient diffusion. A multiple implant scheme was employed to produce samples with an approximately uniform dopant concentration from 40 to 150 nm in depth, but with the amorphous layer extending to a depth of 380 nm. By scaling the implant doses, alloys with different concentrations in the uniform region were produced, allowing an accurate measure of diffusion coefficients as a function of concentration. Diffusion ...
1985-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Energy Technology Data Exchange (ETDEWEB)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}
1999-03-01
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
International Nuclear Information System (INIS)
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.
1999-03-01
Investigation of texturization for crystalline silicon solar cells with sodium carbonate solutions
Energy Technology Data Exchange (ETDEWEB)
We investigate a new texturization technique for crystalline silicon solar cells with sodium carbonate (Na{sub 2}CO{sub 3}) solutions. We show the dependence of the hemispherical surface reflectance on solution temperature, the etching time and the Na{sub 2}CO{sub 3} concentration. Furthermore, we investigate what element in Na{sub 2}CO{sub 3} solution influences the texturing for reducing the texturing time. As a result of experiments, we find it possible to get low reflectance in a shorter texturing time by the addition of NaHCO{sub 3}. The size of texture becomes smaller by the addition of NaHCO{sub 3} but the etching rate does not change. We conclude carbonic ion and/or its compound seems to play an important role as the initiator of pyramidal structure. This texturing method is cost effective because there is no need of expensive IPA, and the surface reflectance is reduced sufficiently in a short time. This method is promising for a large-scale production of ...
2000-04-01
Integration of fiber coupled high-Q silicon nitride microdisks with magnetostatic atom chips
Micron scale silicon nitride (SiNx) microdisk optical resonators fabricated on a silicon wafer are demonstrated with Q = 3.6 x 10^6 (finesse = 5 x 10^4) and an effective mode volume of 15 (\\lambda / n)^3 at wavelengths \\lambda ~ 852 nm resonant with the D2 transition manifold of cesium. A dilute hydrofluoric wet etch is shown to provide sensitive tuning of the microdisk optical resonances, and robust mounting of a fiber taper provides efficient fiber optic coupling to the SiNx microdisk cavities while allowing unfettered optical access for laser cooling and trapping of atoms. Initial measurement of a hybrid atom-cavity chip indicates that cesium adsorption on the surface of the SiNx microdisks results in significant red-detuning of the disk resonances. A technique for parallel integration of multiple (10) microdisks with a single optical fiber taper is also demonstrated.
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ratio.-Si{sub 3}N{sub 4} ...
2003-07-01
Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials
Energy Technology Data Exchange (ETDEWEB)
An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...
1986-07-01
Influence of metallurgical factors on corrosion and electrochemical behavior of structural materials
International Nuclear Information System (INIS)
An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO_2. As shown by the investigations of a study of the anodic behavior of Fe_4_0Ni_4_0P_1_4B_6 and Fe_4_0Ni_3_8Mo_4B_1_8, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but without the boron. The authors note that ...
1986-01-01
International Nuclear Information System (INIS)
In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the poly-Si films are the main factors that ...
2006-01-01
Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation
Energy Technology Data Exchange (ETDEWEB)
The diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si{sup +}, 1 {times} 10{sup 16}/cm{sup 2}, implant. A 4{times} larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10{times} smaller diffusion relative to markers without the MeV Si{sup +} implant. This data demonstrates that a 2 MeV Si{sup +} implant injects vacancies into the near surface region.
1997-04-01
Energy Technology Data Exchange (ETDEWEB)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
2007-06-04
International Nuclear Information System (INIS)
In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage measurement. The analysis of ...
2007-06-04
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
Energy Technology Data Exchange (ETDEWEB)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.
2004-02-01
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
International Nuclear Information System (INIS)
In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.
2004-02-01
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
Energy Technology Data Exchange (ETDEWEB)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter extractions have ...
2004-02-01
Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon
International Nuclear Information System (INIS)
Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects (#left brace#3 1 1#right brace#, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been found to fit the data. Boron enhanced diffusion effect has been studied. Model parameter ...
2004-02-01
International Nuclear Information System (INIS)
2-hydroxyethyl methacrylate (HEMA) has been deposited onto the surface of silicon substrate (thickness = 500 ?m) using plasma polymerization technique. Polymerization process was carried out in an in-house developed inductively coupled plasma polymerization setup. The depositions were carried out using RF power supply (13.56 MHz) at power of 75 W for 10 and 40 min. The RF supply was coupled to the inductance through a matching network. The effect of plasma polymerization (surface grafting) on the degree of surface modification has been investigated. The chemical changes on the polymer backbone are followed from the results of Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS), which show the peaks corresponding to the functional groups of the HEMA polymerized onto the silicon surface. The morphology of the modified surfaces has also been investigated using scanning electron microscopy (SEM) and atomic ...
2005-05-30
Energy Technology Data Exchange (ETDEWEB)
Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...
1989-03-01
International Nuclear Information System (INIS)
Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO_x) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO_x shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO_x nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO_x shell acts as an effective insulating layer. The ZnTe-SiO_x nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.
2009-11-11
Characterization of 3D thermal neutron semiconductor detectors
International Nuclear Information System (INIS)
Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection ...
2007-06-11
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
Energy Technology Data Exchange (ETDEWEB)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the ...
1991-01-01
Annealing and diffusion characteristics of boron-through-oxide implanted silicon
International Nuclear Information System (INIS)
The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced ...
A detailed physical model for ion implant induced damage in silicon
Energy Technology Data Exchange (ETDEWEB)
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated ...
1998-06-01
A detailed physical model for ion implant induced damage in silicon
International Nuclear Information System (INIS)
A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the ...
1998-06-01
Energy Technology Data Exchange (ETDEWEB)
The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop ...
2005-11-01
Solid state diffusion in metal silicides
International Nuclear Information System (INIS)
Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach ...
Transient enhanced diffusion in B/sup +/ and P/sup +/ implanted silicon
International Nuclear Information System (INIS)
The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.
Thin-film UV detectors based on hydrogenated amorphous silicon and its alloys
Energy Technology Data Exchange (ETDEWEB)
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)
2001-05-16
The PAMELA space experiment: first year of operation
Energy Technology Data Exchange (ETDEWEB)
On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.
2008-05-15
Study on the solid state reaction between bilayered Pd/Au films and silicon substrates
British Library Electronic Table of Contents (United Kingdom)
Bilayers of pure palladium and gold films were evaporated alternatively on (100) and (111) monocrystalline silicon substrates. After annealing, in a vacuum furnace from 100 to 650degreeC during 30min, the growth sequence of the Pd2Si and PdSi phases that evolved as the result of the diffusion reaction was examined by means of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), whereas the surface morphology was investigated by scanning electron microscopy (SEM) technique. The effect of the intermediate gold layer is investigated in order to test its effectiveness as barrier for Cu and Si atoms interdiffusion and its influence on the morphology of the formed palladium silicides. The effect of substrate orientation on the palladium silicides growth and formation was also e...
2006-01-01
British Library Electronic Table of Contents (United Kingdom)
Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...
2011-01-01
International Nuclear Information System (INIS)
The thermal transformation of Al-base icosahedral phases was studied in-situ by real time neutron powder diffraction. Different compositions have been selected in order to vary the initial phase morphology and change the neutron scattering contrast between species. Alloys with low silicon and large aluminium contents produce first the orthorhombic O-Al_6Mn modification. In alloys with larger silicon content, the #alpha#-AlMnSi cubic phase appears soon after the beginning of the transformation but is still preceeded by O-Al_6Mn. Depending on compositions, the crystallization of the icosahedral phase is controlled either by the diffusion of Al through its interface with the residual fcc aluminium or that of Si within the bulk. The results are discussed in the light of current structural models. (author) 40 refs., 14 figs., 3 tabs.
1987-01-01
Radiation hardening of integrated circuits technologies
International Nuclear Information System (INIS)
The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.
International Nuclear Information System (INIS)
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
2009-01-01
British Library Electronic Table of Contents (United Kingdom)
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
2009-01-01
International Nuclear Information System (INIS)
Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)
2008-12-01
Multi-Layer Inkjet Printed Contacts to Si
Energy Technology Data Exchange (ETDEWEB)
Ag, Cu, and Ni metallizations were inkjet printed with near vacuum deposition quality. The approach developed can be easily extended to other conductors such as Pt, Pd, Au, etc. Thick highly conducting lines of Ag and Cu demonstrating good adhesion to glass, Si, and printed circuit board (PCB) have been printed at 100-200 deg C in air and N2 respectively. Ag grids were inkjet-printed on Si solar cells and fired through the silicon nitride AR layer at 850 deg C, resulting in 8% cells. Next generation inks, including an ink that etches silicon nitride, have now been developed. Multi-layer inkjet printing of the etching ink followed by Ag ink produced contacts under milder conditions and gave solar cells with efficiencies as high as 12%.
2005-11-01
Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films
Energy Technology Data Exchange (ETDEWEB)
Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TFT performance improves as the H content is lowered. Devices made from {approximately}0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower process temperature (300 C). The best sputtered TFT's had mobilities of {approximately}200 cm{sup 2}/Vs, and on/off current ratios of more than 10{sup 8}.
2000-01-01
International Nuclear Information System (INIS)
It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.
2003-11-17
Hybrid insulator - the excellent post insulator for HVAC and HVDC power station
Energy Technology Data Exchange (ETDEWEB)
A solid layer artificial pollution test was carried out to study the pollution performance of a new type of hybrid station post insulator used in suspension and tensile high voltage transmission lines. The structure of the separated silicone rubber shed and porcelain core hybrid insulator was shown. The new insulator showed excellent pollution performance under both HVAC and HVDC conditions. It also exhibited excellent aging performance in artificial aging tests. The mechanical strength of the hybrid insulator was also better than normal composite insulators. Another advantage revealed was the fact that separated silicone rubber sheds and porcelain core hybrid post insulators are easier to manufacture than normal porcelain post insulators and other hybrid insulators. 5 refs., 6 tabs., 1 fig.
1997-12-31
British Library Electronic Table of Contents (United Kingdom)
Rapid nitridation was used to fabricate reaction-bonded and postsintered -Si6-ZAlZOZN8-Z (Z=1) ceramics with monoclinic ZrO2 added to the starting powder. Thermo-gravimetric analysis revealed that the addition of ZrO2 reduced the starting temperature of the main nitridation reaction. Using a reaction-bonding route with heating rates of 5, 10, and 20C/min, to fabricate -SiAlON ceramics without ZrO2 resulted in unreacted silicon that bled out of the specimens and the Z=1 composition samples did not maintain the original green compact morphology. On the other hand, no such bleeding of melted silicon was observed for samples with ZrO2 additions and the samples following nitridation maintained the original green morphology. The microstructure and mechanical properties of samples produced by rap...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.
1984-08-01
Enhanced diffusion from interstitial trapping during solid-phase-epitaxial growth of silicon alloys
Energy Technology Data Exchange (ETDEWEB)
During the recrystallization by solid-phase-expitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +/- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, it is proposed that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing. 12 references, 6 figures.
1984-01-01
Electrical properties of focused-ion-beam boron-implanted silicon
International Nuclear Information System (INIS)
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).
Using the infrared spectroscopy method, we have studied the effect of thermal dehydration (under vacuum and in air) and treatment with water vapor on the acid centers of very high silicon zeolites of the ZSM type. We have shown that dehydration under vacuum and in air completely and irreversibly removes the OH groups at 1120/sup 0/K, while treatment with water vapor removes these groups at 770/sup 0/K. The Lewis acid centers of dehydrated zeolites (represented by two types of centers) are more heat-stable than the Bronsted acid centers, but the vapor treatment at 1020/sup 0/K leads to the disappearance of the Lewis acid centers. In this work, we discuss the reasons for destruction of the acid centers of the zeolites under different treatment conditions.
1986-08-01
British Library Electronic Table of Contents (United Kingdom)
The Physikalisch-Technische Bundesanstalt (PTB), Germany's national metrology institute, developed an alignment strategy to specify elemental depth profiling in vertical sidewall layers on structured wafers. For this purpose, PTB's irradiation chamber for 200?mm and 300?mm silicon wafers was used to combine total-reflection X-ray fluorescence (TXRF) and grazing incidence XRF (GIXRF) techniques by employing monochromatized undulator radiation of the BESSY II electron storage ring. 3-D test structures were fabricated to develop an optimal alignment strategy allowing for depth profiling in such nanolayers. The test structures consisted of silicon bars with widths/spacings either in the ?m or in the nm range. In order to be able to differentiate the sidewalls more easily from the remainder of ...
2008-01-01
Crystallisation of grain boundary phases in silicon nitride and sialon ceramics
International Nuclear Information System (INIS)
A survey is presented of the principles and practice of tailoring sintering liquid composition and processing cycle to enable crystallisation of intergranular phases in silicon nitride and sialon ceramics. Critical features in sialon ceramics are the O/N balance in residual glasses and post-sintering heat-treatment temperatures to enable nucleation of either intermediate phases at constant composition or oxide phases with re-partitioning of non stoichiometric components in #beta#' or #alpha#' solid solutions. Crystallisation of disilicate phases in non-sialon compositions exemplifies a problem in control of polymorphs with differing atomic volumes. Crystallisation of intergranular phases has an influence mainly on high-temperature mechanical and environmental behaviour of these ceramics. (orig.).
1993-10-04
Energy Technology Data Exchange (ETDEWEB)
A data analysis based on an artificial neural network classifier is proposed to identify cosmic ray antiprotons detected with the CAPRICE silicon-tungsten imaging calorimeter against electron background in the energy range 1.2-4.0 GeV. A set of new physical variables, describing the events inside the calorimeter on the base of their different patterns, are introduced in order to discriminate between hadronic and electromagnetic showers. The ability of the artificial neural network classifier to perform a careful multidimensional analysis gives the possibility to identify antiprotons with an electron rejection 408{+-}85 (stat) at 95.0{+-}0.2 (stat)% of signal detection efficiency. The high accuracy achieved by this method improves substantially the efficiency in the evaluation of the cosmic ray antiproton spectrum. (orig.).
1996-11-01
Ceramic bearings for application to hard disc drives (HDD); HDD yo ceramic ball bearing
Energy Technology Data Exchange (ETDEWEB)
Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)
2000-03-01
Boron transient enhanced diffusion in heavily phosphorus doped silicon
International Nuclear Information System (INIS)
A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.
1996-12-02
Atomic scale simulations of arsenic ion implantation and annealing in silicon
International Nuclear Information System (INIS)
We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.
2004-12-15
International Nuclear Information System (INIS)
Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).
Analysis on anomalous degradation in silicon solar cell designed for space use
Energy Technology Data Exchange (ETDEWEB)
Recently, we have found the anomalous degradation of electrical performance in silicon solar cells irradiated with charged particles in a high-fluence region. This anomalous phenomenon has two typical features, which are sudden-drop-down of electrical performances in a high-fluence region and slight recovery of the short circuit current I{sub SC} just before the sudden-drop-down. These features cannot be understood by a conventional model coming from the decrease of minority-carriers life-time. We introduce this anomalous degradation of the electrical performance in Si solar cells irradiated with electrons or protons. We also report the result of simulation for the fluence dependence of the I{sub SC}, and discuss the mechanism of this anomalous phenomenon. (author)
1997-03-01
International Nuclear Information System (INIS)
Hydrogen (H) plasma treatment, oxygen (O) plasma treatment and water (H_2O)-vapor heat treatment for polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) have been analyzed by separately extracting trap density at a front silicon-oxide interface (D_F) and trap density at a back interface (D_B). It is found that the H plasma treatment is apt to generate D_F and D_B. The O plasma treatment reduces D_F, while the H_2O-vapor heat treatment reduces both D_F and D_B. Improvement of transistor characteristics of poly-Si TFTs depends on understanding these results.
2004-05-17
Aluminium Phosphide-Induced Esophageal Stricture Palliation with Polyflex Stent
British Library Electronic Table of Contents (United Kingdom)
A 21-year-old woman developed midesophageal stricture two weeks after ingestion of aluminium phosphide (AlP) tablets. Aluminium phosphide is a lethal protoplasmic toxin and is also the most common cause of suicidal poisoning in northern India. Upper gastrointestinal endoscopy (UGIE) showed a tight esophageal stricture 29?cm from the incisors with a circumferential ulcer. Dilatation up to 17?mm was done using Savary-Gilliard dilators. She had repeated dilatations three times at nearly two-week intervals. In view of the resistant stricture, a silicone Polyflex stent was placed across the stricture and removed after 3?months; there was no recurrence of stricture even after three months of follow-up. Patients with recurrent esophageal stricture and those with fistula may benefit from silicone ...
2008-01-01
A phenomenological model for the macroscopic characteristics of irradiated silicon
International Nuclear Information System (INIS)
The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.
A nanosized silicon thin film as high capacity anode material for Li-ion rechargeable batteries
Energy Technology Data Exchange (ETDEWEB)
Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.
2006-07-15
British Library Electronic Table of Contents (United Kingdom)
Abstract Surface modification of topography and chemistry in order to achieve a specific water contact angle (CA) has been explored by using a novel combinatorial screening platform. The screening arrays consisted of 507 distinct combinations of micro-topographies and chemical compositions. By performing chemical modifications with 1H, 1H, 2H, 2H perfluoroethyltriethoxy-silane (PFS) and n-octadecyltriethoxysilane (ODS) on standard silicon wafers it was possible to include both superhydrophobic and very hydrophilic pad arrays in the same screening platform. Surfaces modified with PFS were more hydrophobic than surfaces modified with ODS, while the unmodified silicon surfaces were hydrophilic. For the PFS modified surfaces the largest CAs were achieved with a small pillar size of X-=-1-m and...
2011-01-01
Use of genetic parameters in coal classification
The extensive reserves of mined coal types, their great variety and the complexity of the composition and properties, as well as their important role as an energy fuel and industrial feedstock, cause one to give special attention to their classification. Of course, one of the principal fields of technological processing of coal is coking. In addition to the production of blast furnace coke, in the future specialized plants will be developed for production of coke and other carbonized materials for non-blast-furnace processes (electrothermal processes, production of calcium carbide, ferroalloys, zinc, yellow phosphorus, copper, etc.). One important area is new nonfuel uses, including a number of processes for processing of coal feedstocks to obtain a wide range of carbonaceous materials (coal-graphite products, carbon black, adsorbents, etc.), liquid fuels, and chemical products. In choosing a given area of coal utilization a determining factor is the ...
1984-01-01
Thermal spraying of reactive materials to form wear-resistant composite coatings
Energy Technology Data Exchange (ETDEWEB)
The dispersion of more than 20 vol pct submicrometer ceramic particles within a metallic matrix and the deposition of such a cermet to form a thick and tough coating presents problems. Most of the coating techniques have failed in attempting to homogeneously disperse very fine and hard particles in large amounts while avoiding their decomposition or reaction with the metal matrix during the deposition process. A simple and efficient method has been developed for producing ceramic-containing composite coatings. It consists in synthesizing cermet-based materials and in depositing them by a rapid solidification process, such as thermal spraying. Boride- and carbide-based materials have been successfully obtained by plasma spraying reactive powders comprising the basic reagents. These materials, with a microstructure of submicrometer ceramic particles dispersed in a metallic matrix, exhibit good wear-resistant properties (abrasion and sliding wear). Finally, reactive ...
1992-03-01
International Nuclear Information System (INIS)
The influence of chemical composition and heat treatment on a low-carbon steel, chromium steel and high speed steel has been examined by polarisation curves and electrochemical parameters deduced from the Tafel plots. The electrochemical corrosion resistance, which is small between the as-received steels become greater after heat treatment, following the order: carbon steel < chromium steel #approx# high speed steel. To explain these differences, the nano- and microstructure of the steels has been characterized by the ex situ techniques of atomic force microscopy and optical microscopy, before and after surface etching with Nital (a solution of 5% HNO_3 in ethanol). This causes preferential attack of the ferrite phases showing the carbide phases more clearly. From these nanostructural studies it was possible to better understand why the passive films formed on chromium steel and high speed steel have superior protective properties to those formed on carbon ...
2005-12-01
Stress corrosion cracking of type 304L stainless steel core shroud welds.
Energy Technology Data Exchange (ETDEWEB)
Microstructural analyses by advanced metallographic techniques were conducted on mockup welds and a cracked BWR core shroud weld fabricated from Type 304L stainless steel. heat-affected zones of the shroud weld and mockup shielded-metal-arc welds were free of grain-boundary carbide, martensite, delta ferrite, or Cr depletion near grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the welds were significantly contaminated by fluorine and oxygen which migrate to grain boundaries. Significant oxygen contamination promotes fluorine contamination and suppresses classical thermal sensitization, even in Type 304 steels. Results of slow-strain-rate tensile tests indicate that fluorine exacerbates the susceptibility of irradiated steels to intergranular stress corrosion cracking. These observations, combined with previous reports on the strong influence of weld flux, indicate that oxygen and fluorine contamination and ...
1999-10-26
Stress corrosion cracking of austenitic stainless steel core internal welds.
Energy Technology Data Exchange (ETDEWEB)
Microstructural analyses by several advanced metallographic techniques were conducted on austenitic stainless steel mockup and core shroud welds that had cracked in boiling water reactors. Contrary to previous beliefs, heat-affected zones of the cracked Type 304L, as well as 304 SS core shroud welds and mockup shielded-metal-arc welds, were free of grain-boundary carbides, which shows that core shroud failure cannot be explained by classical intergranular stress corrosion cracking. Neither martensite nor delta-ferrite films were present on the grain boundaries. However, as a result of exposure to welding fumes, the heat-affected zones of the core shroud welds were significantly contaminated by oxygen and fluorine, which migrate to grain boundaries. Significant oxygen contamination seems to promote fluorine contamination and suppress thermal sensitization. Results of slow-strain-rate tensile tests also indicate that fluorine exacerbates the susceptibility of ...
1999-04-14
British Library Electronic Table of Contents (United Kingdom)
TaC-4wt.% CNT composites were synthesized using spark plasma sintering. Two kinds of CNTs, having long (10-20mm) and short (1-3mm) length, were dispersed by wet chemistry and spray drying techniques respectively. Spark plasma sintering was carried out at 1850^oC at pressures of 100, 255 and 363MPa. Addition of CNTs leads to an increase in the density of 100MPa sample from 89% to 95%. Short CNTs are more effective in increasing the density of the composites whereas long CNTs are more effective grain growth inhibitors. The longer CNTs are more effective in increasing the fracture toughness and an increase up to 60% was observed for 363MPa sample. Hardness and elastic modulus are found to increase by 22% and 18% respectively for 100MPa samples by addition of long CNTs. Raman spectroscopy, SEM...
2011-01-01
Sintering of nano-sized WC-Co powders produced by a gas reduction-carburization process
Energy Technology Data Exchange (ETDEWEB)
Nanocrystalline cemented tungsten carbide has attracted considerable interests for use in cutting tool because of its superior mechanical properties. In this study, nano-sized powders of mixed WC and Co were prepared from attrition-milled oxides by a gas reduction-carburization process. The effects of compacting pressure, heating schedule, additional ball-milling, and the presence of a grain growth inhibitor on the sintering properties of the nano-sized WC-Co powders were examined. The grain size and phases in WC-Co alloy were clearly affected by compacting pressure. Because of the trapped gases and the lower melting point of the cobalt binder, when a compact of nano-sized WC-Co powder was sintered through a heating schedule with holding steps, the sintered alloy maintained the small size of WC grains without any {eta} phase. In addition, the additional ball-milling improved the microstructure and mechanical properties of the nano-sized WC-Co powder by producing a ...
2006-08-10
Sintering of nano-sized WC-Co powders produced by a gas reduction-carburization process
International Nuclear Information System (INIS)
Nanocrystalline cemented tungsten carbide has attracted considerable interests for use in cutting tool because of its superior mechanical properties. In this study, nano-sized powders of mixed WC and Co were prepared from attrition-milled oxides by a gas reduction-carburization process. The effects of compacting pressure, heating schedule, additional ball-milling, and the presence of a grain growth inhibitor on the sintering properties of the nano-sized WC-Co powders were examined. The grain size and phases in WC-Co alloy were clearly affected by compacting pressure. Because of the trapped gases and the lower melting point of the cobalt binder, when a compact of nano-sized WC-Co powder was sintered through a heating schedule with holding steps, the sintered alloy maintained the small size of WC grains without any #eta# phase. In addition, the additional ball-milling improved the microstructure and mechanical properties of the nano-sized WC-Co powder by producing a ...
2006-08-10
Energy Technology Data Exchange (ETDEWEB)
Hard surface finishing represents the final manufacturing step for functional areas of machine elements in state-of-the-art production. Raceways of rolling bearing rings are ground and honed to the required low roughness. Plastic deformation is restricted to a narrow edge zone of the hardened steel. Reheating of the machined components below the martensite tempering or bainite transformation temperature results in a marked decrease of the XRD line width on the surface. The investigated samples are made of through-hardened standard bearing steel 100Cr6 (international denotation: SAE 52100). On the basis of a material model that explains the effect as a complex diffusion process of dislocational carbon segregation, i.e. static strain aging, the measured kinetics of the XRD line width reduction is simulated by an Arrhenius-type equation, which describes the rate-controlling reaction step of temper carbide dissolution. The formation of a small white-etching surface ...
2008-07-01
Oscillating line travel pipe cleaning machine
Energy Technology Data Exchange (ETDEWEB)
A major problem in the maintenance and rehabilitation of pipelines is the removal of the original coating system, particularly in cases where the coating contains sticky components or adhesives. It has been found that such coatings can be removed by use of a cleaning machine with a plurality of counter-rotating carbide-tipped tools mounted to an oscillating head embracing the pipe, and which is operable at the same time to travel along the length of the pipe. Such a machine can be designed to effect a positive, gentle milling operation on the pipe surface to remove the coating efficiently and at relatively low power consumption. A particular advantage of the pipe cleaning machine of the invention is that its design and manner of operation allows it to be used in the field to clean an uncovered section of pipeline, for example a natural gas pipeline, without the requirement of removing the pipeline section from the ditch in which it is seated. The machine of the ...
1992-04-28
Nanosized copper ferrite materials: Mechanochemical synthesis and characterization
International Nuclear Information System (INIS)
Nanodimensional powders of cubic copper ferrite are synthesized by two-steps procedure of co-precipitation of copper and iron hydroxide carbonates, followed by mechanochemical treatment. X-ray powder diffraction, Moessbauer spectroscopy and temperature-programmed reduction are used for the characterization of the obtained materials. Their catalytic behavior is tested in methanol decomposition to hydrogen and CO and total oxidation of toluene. Formation of nanosized ferrite material is registered even after one hour of milling time. It is established that the prolonging of treatment procedure decreases the dispersion of the obtained product with the appearance of Fe2O3. It is demonstrated that the catalytic behavior of the samples depends not only on their initial phase composition, but on the concomitant ferrite phase transformations by the influence of the reaction medium. -- Graphical abstract: It is demonstrated that the catalytic behavior of the obtained copper ferrites depends not ...
2011-05-01
Microstructural aspects of the corrosion of Alloy 800
Energy Technology Data Exchange (ETDEWEB)
Transmission electron microscopy studies on solution-annealed Alloy 800 revealed small (100-200 nm), spherical-shaped titanium carbide (face centered cubic structure) and large (200 nm-5 {mu}m), faceted titanium nitride (hexagonal structure) particles randomly distributed in the austenite matrix. The volume fraction of former particles was found to be greater than that of the latter. Corrosion studies of the alloy in acidic, chlorides and acidic chloride environments at room temperature indicated that the passivity of Alloy 800 was adversely affected by the addition Cl{sup -} ions. X-ray photoelectron spectroscopy revealed that the surface film formed on the alloy at the onset of passivity consisted of Cr{sup 3+} (as Cr{sub 2}O{sub 3}), without any Fe{sup 3+}/Fe{sup 2+} or Ni{sup 2+}. Scanning electron microscopy studies indicated initiation of pitting at large, faceted particles, not at small, spherical-shaped ones.
2004-12-01
Irradiation hardening of reduced activation martensitic steels
International Nuclear Information System (INIS)
Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing irradiation temperature from 646 to 703 K. ...
High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix
Energy Technology Data Exchange (ETDEWEB)
The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3{times}10{sup {minus}5} Pa (10{sup {minus}7} torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T{sub m} is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 ...
1991-01-01
High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix
International Nuclear Information System (INIS)
The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3x10"-"5 Pa (10"-"7 torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T_m is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 K. Besides, an addition of ...
1991-01-06
Fracture behavior of heat-affected zone in low alloy steels
International Nuclear Information System (INIS)
Past elastic-plastic fracture studies for leak-before-break (LBB) assessment of low alloy steel pipings have been focused mostly on the behavior of base metals and their weld metals. In contrast, the heat-affected zone (HAZ) of a welded pipe has not been studied in detail primarily because the size of the HAZ is too small to make specimens for mechanical properties measurements. In this study, microstructural analyses, microhardness tests, tensile tests and J-R tests have been conducted as a function of distance from a fusion line and temperature for HAZ materials of SA106Gr.C low alloy piping steels. For the ferrite-pearlite steels such as SA106Gr.C, the HAZ specimens showed a higher yield strength and fracture toughness compared with those of its base metal. These characteristics, despite of grain coarsening, can be explained by cleaner microstructures of HAZ materials with a finer morphology of carbides compared with pearlitic-ferritic base metals. However, the ...
2001-11-01
Energy Technology Data Exchange (ETDEWEB)
Flow-curve characteristics of the heat-resistant steels X 20 CrMoV 12.1 and alloy 800 (X5NiCrTiAl32.20) were measured by tensile and compression tests at temperatures between room temperature and 800 C and strain rates {epsilon}{<=}10 s{sup -1} in connection with microstructure investigations (dislocation content, carbide precipitation) by TEM and X-ray diffraction analysis (XDA). Modelling the deformation behaviour of the steels in terms of the microstructure development indicates that it cannot be explained in a simple manner. The flow curves {sigma}={sigma}({epsilon}, {epsilon}, T) lie, in general, between those predicted by the Kocks-Mecking-Estrin model and a modified (i.e. two-parameter) Roberts model. Because of the less complicated nature of the deformation process the correspondence of experiment and modelling is more satisfying in the case of the material X 20 CrMoV 12.1. (orig.) 26 refs.
1999-10-01
Evaluation of microstructures and mechanical properties in the HAZ of SA 508 Gr.4N Low Alloy Steel
International Nuclear Information System (INIS)
In the heat-affected zones (HAZ) of low alloy steels used for nuclear pressure vessel, microstructural changes, such as grain coarsening, carbide precipitation, and martensite formation, generally occur and cause a deterioration of toughness and an increase in sensitivity to brittle fracture. Metallographic analyses of low alloy steel welds reveal significantly different regions in HAZ microstructures. In 2-pass welds, there were seven characteristic regions in the HAZ determined by the peak temperature, to which the region was exposed during the weld thermal cycle: a coarse-grained region, a fine-grained region, an intercritical region, and subcritical region. The coarse-grained region can be categorized into four zones according to the reheating temperature as follows : an unaltered coarse-grained zone (UCGHAZ), a supercritically reheated coarse grained zone (SCRCGHAZ), an intercritically reheated coarse-grained zone (ICRCGHAZ), and an subcritically reheated ...
2006-11-02
International Nuclear Information System (INIS)
The effects of Fe and B_4C on the sintering behavior and mechanical properties of TiB_2 ceramics have been studied. Sintering was performed in an Ar atmosphere at 2000 degrees C using attrition-milled TiB_2 powder. When a small amount of Fe (0.5 wt%) was added, abnormal grain growth occurred and the sintered density was low. In the case of B_4C added along with 0.5 wt% Fe, however, abnormal grain growth was remarkably suppressed, and the sintered density was increased up to 95% of theoretical. But with excess Fe addition (5 wt%), B_4C grains did not act as a grain growth inhibitor, and B_4C grains were frequently trapped in large TiB_2 grains. The best mechanical properties were obtained for the TiB_2-10 wt% B_4C-0.5 wt% Fe ceramics, which exhibited a three-point bending strength of 400 MPa and a fracture toughness of 5.5 MPa #centre dot# m"1"/"2.
Development of a new wear-resistant material: TiC/TiNi composite
Energy Technology Data Exchange (ETDEWEB)
In this work, an attempt was made to develop a novel type of wear-resistant composite employing a TiNi alloy matrix reinforced by hard particles. Titanium carbide was chosen as the reinforcing phase because of its high hardness and TiNi alloy as the matrix due to its pseudoelasticity and good toughness. TiC particles may sustain external load, while the TiNi matrix may accommodate deformation, absorb impact energy and retain the hard particles. Such a combination is expected to lead to an enhanced wear resistance, compared to TiNi alloy. As a matter of fact, some efforts were previously made to develop TiNi-matrix composite reinforced by ceramic particles. However, the emphasis of those studies was put on effects of the reinforcing particles on the phase transformation behavior, shape memory effect and some mechanical properties of the composite; no attempt was made to explore the potential benefit of the material for wear application.
1999-10-22
International Nuclear Information System (INIS)
The microstructures of so called high temperature alloys, which have been developed for service temperatures up to 800"0C, are not necessarily stable at higher temperatures. The mobility of alloying elements is very high in FeCrNi alloys at 950 "0C e.g. iron, chromium or nickel can diffuse up to 0.1 mm distance in one year, which is about a grain diameter. Interstitials like carbon or nitrogen show a four orders of magnitude higher diffusivity than the alloying elements. In addition, the carbon solubility in this type of alloy is reported to be very low. Therefore the alloys are supersaturated with carbon after heat treatment above 1100 "0C and water quenching although the absolute carbon content is very low. At service temperatures around 800"0C the solubility of carbon is still about one order of magnitude lower than at heat treatment temperature. This will lead, together with the high mobility of elements, to precipitation of carbides even after short times and ...
1981-05-01
A low temperature synthesized NbC as grain growth inhibitor for WC-Co composites
Energy Technology Data Exchange (ETDEWEB)
Niobium carbide can be used to inhibit WC grain growth in hardmetal. The performance of a NbC powder produced at low temperature by solid-gas reaction (an experimental powder) as WC grain growth inhibitor is compared with that of a commercial NbC powder. It is verified that NbC effectively inhibits heterogeneous WC coarsening. This results in an increase in hardness. The commercial and experimental NbC powders exhibit a comparable performance in inhibiting the WC grain coarsening, in spite of a significant difference in particle size and shape. The commercial NbC powder is very fine while the experimental one is coarse and porous, but its crystallites are finer than those of the commercial product. The milling procedure used to prepare the alloys is able to reduce the particle size of the experimental NbC, and thus guarantee a dispersion of the particles with a quality level comparable to that found for the alloy prepared with the commercial NbC. (orig.)
2000-11-30
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