3-phase cmos rectifier: Topics by WorldWideScience.org

CMOS/SOI hardening at 100 MRAD (SiO_2)

... in artificial intelligence, human physiology and biomedical prosthesis. ... central and peripheral nerve systems [1 ... CMOS circuit interface for multiplexed ...

2001-10-25

Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.

1990-07-16

FEOL technology trend

A 12b 1kS/s 65uA 0.35um CMOS Algorithmic ADC for Sensor Interface in Ubiquitous Environments

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are ...

KoreaScience (Korea)

Full Text Available

2008-03-01

K⁺ Channels Are Responsible for an Inwardly Rectifying Current in the Plasma Membrane of Mesophyll Protoplasts of Avena sativa 12

UK PubMed Central (United Kingdom)

In whole-cell recording, the conductance of the plasma membrane of protoplasts isolated from mesophyll cells of leaves of oat (Avena sativa) was greater for inward than outward current....Full Text Available

1992-03-01

Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

SEE Characterization of the Samsung K4F660812 DRAM ... - NEPP - NASA

Neutron-induced soft error rates (SER`s) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SE`s). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, the SER data corresponds to those induced by cosmic ray neutrons. The {alpha}-particle induced SER`s were also measured for comparison with the neutron-induced SER`s. Neutron-induced SE`s occurred in both circuits. On the other hand, {alpha}-induced SE`s occurred in SRAM, but not in the Latch circuit. The measured SER`s agreed with simulated results. The authors discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.

1998-07-01

Hardening at the design level

the Samsung K4F660812 DRAM were measured by the JPL Radiation Effects. Group [1] . ... The Samsung K4F660812 is a 8 x 223 bit Fast Page CMOS DRAM. The two- ...

Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

Radiation hardening of CMOS-based circuitry in SMART transmitters

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

1992-08-01

Radiation effects on MOS devices and radiation-hard CMOS technologies

Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a radiation-tolerant transmitter could be constructed. A prototype for an analog-to-digital ...

Teaching parallelism. The use of a case study

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for 2k-gate test chips indicate that radiation ...

False-Positive Results in a Recombinant Severe Acute Respiratory Syndrome-Associated Coronavirus (SARS-CoV) Nucleocapsid-Based Western Blot Assay Were Rectified by the Use of Two Subunits (S1 and S2) of Spike for Detection of Antibody to SARS-CoV

The subject of parallelism (or concurrency) has seen little light outside books and courses on operating systems. The authors feel that this is too restricted an arena and that the subject should be dealt with in a wider context. With the aim of trying to rectify the situation they have used, several times, as a teaching aid the study of the use of a computer to control a juke box. The article describes how they use this case study. 2 references.

1982-06-01

UK PubMed Central (United Kingdom)

To evaluate the reactivity of the recombinant proteins expressed in Escherichia coli strain BL21(DE3), a Western blot assay was performed by using a panel of 78 serum samples obtained,...Full Text Available

2006-03-01

Electricity on the rig. Part 3 - New electric rig technology

Single chip linear array picture processor

The use of an SCR-controlled power system on an offshore drilling rig has lead to an increased acceptance of high technology equipment. Such equipment increases drilling productivity, reduces maintenance, and improves reliability. Most new rigs now have AC squirrel cage motors, brushless AC generators, silicon controlled rectifiers, DC motors, and swtichgear and motor starters. Several opportunities for cost reductions in SCR systems, such as improving the power factor, are studied in this paper.

1983-07-01

Radiation hardening of a high voltage IC technology (BCDMOS)

A CMOS programmable picture processor with its own photodiode array is presented. The circuit is novel in that it includes an instruction set that permits most low-level picture processing operations. The chip is a parallel machine with a processing unit for each picture element. Images are binarized and are processed line by line. An experimental chip has been designed and is under fabrication. 2 references.

1983-01-01

Hardening process relating to the irradiation of active electronic components and large hardened components

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

1990-07-16

Photovoltaic Technologies Beyond the Horizon: Optical Rectenna Solar Cell, Final Report, 1 August 2001-30 September 2002

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

The requirements for a sustainable restoration project

ITN Energy Systems is developing next-generation solar cells based on the concepts of an optical rectenna. ITN's optical rectenna consists of two key elements: (1) an optical antenna to efficiently absorb the incident solar radiation, and (2) a high-frequency metal-insulator-metal (MIM) tunneling diode that rectifies the AC field across the antenna, providing DC power to an external load. The combination of a rectifying diode at the feedpoints of a receiving antenna is often referred to as a rectenna. Rectennas were originally proposed in the 1960s for power transmission by radio waves for remote powering of aircraft for surveillance or communications platforms. Conversion efficiencies greater than 85% have been demonstrated at radio frequencies (efficiency defined as DC power generated divided by RF power incident on the device). Later, concepts were proposed to extend the rectennas into the IR and optical region of the ...

2003-02-01

Privatization of the ESI. Broadening the debate. [Electricity supply industry in the UK

The purpose is to describe problems associated with the establishment of vegetation on mined lands and practical rehabilitation and restoration methods for establishing a rehabilitation plan. Land disturbed by mining should be restored to its original state, when the mine is decommissioned, but before that can be attained, site problems such as toxicity, moisture supply, and texture must be rectified. The land may need to pass through several conditioning stages, and links need to be formed to maintain a functioning ecosystem. A key aspect to rehabilitation is the need to increase the organic matter content of the substrate. This improves soil structure, increases the moisture holding ability, and provides a pool for nutrient cycling. 11 refs., 2 tabs.

1991-06-01

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Development of the EE-1 small community solar thermal power system

The debate over the privatization of electricity in the UK has been conducted across too narrow a terrain, being primarily concerned with regulation for optimality in the context of static, if uncertain, conditions of supply and demand. Insufficient account has been taken of dynamic agencies in formulating and bringing about progressive industrial change, something of great importance in the light of their weakness in the UK context. Consequently, a number of deficiencies in the UK ESI have been neglected in the debate over privatization and are not liable to be rectified by it in practice. (author).

1989-06-01

Operational experiences with cathodic protection of Statoil's main onshore pipelines: a description of the online monitoring systems

The development status of the EE-1 Small Community Solar Thermal Power Experiment (SCSE Program) is presented. Current activities on the Phase II single module development effort are presented, together with plans for a Phase III 1 MW/sub e/ demonstration plant. A description of the various subsystems and components is given with a brief review of their development background. Latest performance figures are given for a 1 MW/sub e/ plant, based on 56 power modules, each consisting of a 12m parabolic dish concentrator, a cavity receiver, an organic Rankine power conversion subsystem and a ground-mounted solid-state rectifier.

1981-01-01

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

Statoil is operating an increasing number of offshore and onshore pipelines in the North Sea area and elsewhere. Cathodic protection is a significant part of the corrosion management for these lines and we have collected a significant amount of experience with respect to design and operation of the systems. This paper deals with our comprehensive program for the onshore cathodic protection systems and the various challenges in different countries with respect to technical matters, such as operating conditions and different terrain. Generally, the systems are based on automatically controlled rectifier systems with a wide range of current drainage and very comprehensive monitoring of potentials and current flowing. The use of coupons, polarisation cells and buried reference cells are essential, as well as the use of intensive measurements along the route. The use of online monitoring of selected test posts and all rectifier units is considered ...

1999-07-01

The application of advanced techniques for complex focused-ion-beam device modification

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-#mu#m CMOS ...

2010-04-01

Single event effects in the pixel readout chip for BTeV

Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification on VSLI devices fabricated with CMOS process technology is reviewed. (UK).

1996-12-31

Low cost, low power, high sensitivity, real time neutron detection microsystem

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 {micro}m CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

2001-12-07

Modeling of Valveless Micropumps

A Si array neutron detector is proposed based on commercial CCD and CMOS sensor technology coupled with a thin film neutron conversion coating. System sensitivity is estimated for a baseline device containing a single array and various schemes to increase detection probability by simple area scaling and stacking are discussed. Some possible use scenarios are discussed involving static and moving sources. Likely neutron source fluxes for weapons grade and commercial grade nuclear material are estimated along with expected intensities of cosmic background neutrons which would establish a noise floor to detection limits.

2002-10-10

British Library Electronic Table of Contents (United Kingdom)

There are two difficulties encountered in modeling valveless micropumps using lumped-element methods. The pressure loss coefficient for fluidic diodes used in valveless pumps to rectify flow depends on the flow direction. A problem arises in choosing the proper loss correlation because the flow direction is not known a priori. Another problem is the quadratic form of the equation for the flow through the fluidic diodes, which brings about multiple solutions. The above problems become even more serious in multi-chamber cases. They are overcome in this study by suitably formulating the flow resistance. In addition, the flow inertia is accounted for in the unsteady model. The steady and unsteady models are evaluated by comparing with CFD simulations, which also serve to illustrate the flow fi...

2009-01-01

Materials for air turbines in wave power devices. A generic study

Cast in Plastic: Semiotic Plasticity and the Pragmatic Reading of Darwin

Wave energy device teams have identified three varieties of air turbine as potentially applicable to wave energy devices. These are: conventional axial turbines; Wells, or self-rectifying, axial turbines and Francis turbines. This report examines the constructional requirements of these devices with regard to mechanical, environmental and manufacturing considerations. It is concluded that the major benefit of optimum material selection will be reduced manufacturing costs rather than enhanced turbine performance. A methodology of material selection has been established and candidate materials have been listed for the major components of each turbine type. Comparative costs for alternative materials are included, from which significant, potential economies have been identified. Recommendations are made aimed at achieving optimum material usage in the proposed turbines.

1981-01-01

British Library Electronic Table of Contents (United Kingdom)

As Darwin portended but failed to develop, and of which Gould made much, the forensic evidence of evolution points toward Punctuated Equilibrium rather than Phyletic Gradualism; however Gould?s empirical postulation has long suffered from its lack of a testable theoretical basis. This is rectified by the work of Jaroslav Flegr and the Frozen Plasticity Theory, a hypothesis with striking application within semiotic theory and hence to questions of epistemology and ontology. The consequences of applying FPT within Biosemiotics is this: when any particular sign carries a great range of interpretation (semiotic polymorphism) combined with a high degree of mutually supportive referencing (semiotic pleiotropy), that sign is less likely to exhibit plasticity?less able to find new expressions capa...

2011-01-01

Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

Radiation hardening of smart electronics

In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of ...

2004-03-15

Radiation hardening of integrated circuits technologies

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs.

IC chip stress during plastic package molding

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems

Approximately 95% of the world`s integrated chips are packaged using a hot, high pressure transfer molding process. The stress created by the flow of silica powder loaded epoxy can displace the fine bonding wires and can even distort the metalization patterns under the protective chip passivation layer. In this study the authors developed a technique to measure the mechanical stress over the surface of an integrated circuit during the molding process. A CMOS test chip with 25 diffused resistor stress sensors was applied to a commercial lead frame. Both compression and shear stresses were measured at all 25 locations on the surface of the chip every 50 milliseconds during molding. These measurements have a fine time and stress resolution which should allow comparison with computer simulation of the molding process, thus allowing optimization of both the manufacturing process and mold geometry.

1998-02-01

Power system stabilizer application in a two unit plant analytical studies and field tests

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

Near-infrared photodetectors based on mercury indium telluride single crystals

The use of excitation system controls, specifically the Power System Stabilizer (PSS), to improve damping of power system oscillations and thus extend steady-state stability limits has been a subject of great interest in recent years. The desire to more fully utilize transmission capacity led to the installation of PSS controls on greater numbers of generating units to maintain stability margins. This paper addresses the tuning and adjustment of PSS controls in a two unit power plant. Both analytical studies and field test confirmations are presented. The practical difficulties of verifying the PSS control loop gain margin by testing are explored. A simplified procedure is outlined. The Lower Colorado River Authority (LCRA), Fayette Power Project (FPP) consists of two 683.7 MVA tandem compound steam turbine driven generators. The excitation systems are of the alternator rectifier type and the PSS control utilizes shaft speed as an input signal. The units must ...

1983-02-01

Modelling discharges in electronegative gases

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the ...

2008-03-01

Growth and characterisation of electrodeposited ZnO thin films

This paper builds on earlier work to give a consistent treatment of the positive column of discharges in electronegative gases covering the transition from collisionless to collisional. In particular it seeks to elucidate the conditions under which there is an ion-ion plasma core surrounded by an electron-ion plasma, and when there is not. The parameters which describe the processes of ionization, attachment, detachment and recombination are related to the central negative ion density relative to the electron density and, where appropriate, the size of the core. The use, by earlier workers, of the Boltzmann approximation to describe the negative ion distribution and to obtain ambipolar diffusion coefficients at higher pressures is shown not to be justified. This leads to the clarification of an inconsistency in the literature. Where possible, the work is related to other recent treatments of the same problem in order to begin to build a comprehensive picture of such discharges. The ...

1999-09-07

Comparative evaluation of similarity measures for the rigid registration of multi-modal head images

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from aqueous zinc nitrate solution at 80 deg. C onto fluorine doped tin oxide (FTO) coated glass substrates. ZnO thin films were grown between - 0.900 and - 1.025 V vs Ag/AgCl as established by voltammogram. Characterisation of ZnO films was carried out for both as-deposited and annealed films in order to study the effect of annealing. Structural analysis of the ZnO films was performed using X-ray diffraction, which showed polycrystalline films of hexagonal phase with (002) preferential orientation. Atomic force microscopy was used to study the surface morphology. Optical studies identified the bandgap to be {approx} 3.20 eV and refractive index to 2.35. The photoelectrochemical cell signal indicated that the films had n-type electrical conductivity and current-voltage measurements showed the glass/FTO/ZnO/Au devices exhibit rectifying properties. The thickness of the ZnO films was ...

2008-04-30

An indicator, high speed method for determining the water and aqueous phase content in a hydrocarbon fuel

Image registrations that are based on similarity measures simply adjust the parameters of an appropriate spatial transformation model until the similarity measure reaches an optimum. The numerous similarity measures that have been proposed in the past are differently sensitive to imaging modality, image content and differences in the image content, selection of the floating and target image, partial image overlap, etc. In this paper, we evaluate and compare 12 similarity measures for the rigid registration. To study the impact of different imaging modalities on the behavior of similarity measures, we have used 16 CT/MR and 6 PET/MR image pairs with known 'gold standard' registrations. The results for the PET/MR registration and for the registration of CT to both rectified and unrectified MR images indicate that mutual information, normalized mutual information and the entropy correlation coefficient are the most accurate similarity measures and ...

2007-09-21

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A Study on the Matching between the Straight Wing Non-articulated Vertical Axis Wind Turbine and the New Wind Turbine Generator

A method and an instrument for determining the total water content in a hydrocarbon fuel using an indicator composition, which includes calcium hydride and phenolphthaleyn, are developed. The essence of the method is fixing the presence of water with its interaction with the calcium hydride and subsequent indication of the formed Ca(OH)2 using the phenolphthallen. To make the indicator composition, a hygroscopic cotton, prewashed by rectified alcohol and dried for 30 minutes at 105 degrees, is impregnated by a 1 percent alcohol solution of phenolphthaleyn and is dried in the same conditions. Then the cotton is processed by a powder form calcium hydride (a layer thickness of 0.1 to 0.2 millimeters, and a granule size of less than or equal to 80 micromters). The indicator composition is placed in a glass tube (a diameter of 4 to 7 millimeters and a length of 80 to 100 millimeters), whose ends are sealed or filled with paraffin. The content of water in the fuel is ...

1983-01-01

Challenges in commissioning and operation of 'first-of -its- kind' liquid zone control system in TAPP-3 and 4

In the current wind turbine generation system, there are substantial problems such as the maximum power of the wind turbine cannot be obtained under the fluctuating wind speed, high in cost and low in annual net electricity production (due to mismatch between a generator and a wind turbine). A new wind turbine generator optimized for the wind turbine output is presented in order to solve such problems. This wind turbine generator consists of a permanent magnet generator, a reactor and a rectifier, and uses neither a control circuit which requires standby electricity nor a PWM converter having a switching element. By selecting most appropriate combination of the permanent magnet generator having multiple windings and the reactor connected in series with each winding, the maximum output of the wind turbine can be obtained without using a control circuit. The new wind turbine generator was directly coupled with the straight wing non-articulated vertical axis wind ...

2008-01-01

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Liquid Zone Control (LZC) System is a 'first-of-its-kind' reactivity control device, designed and implemented at TAPP-3 and 4. The system provides zonal and bulk power control. The system consists of fourteen Zone Control Compartments (ZCCs) containing demineralised light water as neutron absorber. Reactivity control is achieved by varying the level of water in the compartments bi-directionally. Six in-core zircaloy assemblies, housing the fourteen ZCCs and an elaborate process system constitute the LZC system. Measurement of water levels in the ZCCs is done using helium bubbler method. Reliability of ZCC water level measurement is of paramount importance. Commissioning and operating the new system trouble free was a challenge, considering the complex nature of the system. While commissioning the system, level measurement of one of the ZCCs (ZCC - 1) was found erratic and inconsistent. Methodologies were developed to identify the problem and investigations revealed leakage of helium ...

2006-11-13

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition temperature and the super ...

2004-12-15

Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys

2004-12-15

MOS flat-band capacitance method at low temperatures

In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of ...

2010-07-01

Investigation on boron transient enhanced diffusion induced by the advanced P{sup +}/N ultra-shallow junction fabrication processes

The expression C/sub FB/ = C/sub ox/ x ({element of}/sub si//L/sub D/)/(C/sub ox/ + ({Epsilon}/sub si//L/sub D/)) (where L/sub D/ is the Debye length), commonly used for the flat-band capacitance of the MOS structure, is invalid in the temperature range below 100 {Kappa}. Consequently, significant error may be encountered when the flat-band capacitance method is used to extract the flat-band voltage V/sub FB/, which is of considerable interest for both the modeling and characterization of MOS devices. To extend this method to low-temperature CMOS applications one has to use a more general model that can be obtained by applying Fermi-Dirac statistics and taking into account the impurity freezeout effect. The authors show that when the temperature dependence of V/sub FB/ is extracted using this approach, the experimental data for n/sup +/ polysilicon gate MOS capacitors are in a good agreement with a simple model.

1989-08-01

Investigation on boron transient enhanced diffusion induced by the advanced P"+/N ultra-shallow junction fabrication processes

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

2005-08-01

A widely tunable continuous-time LPF for a direct conversion DBS tuner

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...

2005-08-01

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35 mum SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f{sub 0} can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +-5% bandwidth accuracy, 30 nV/Hz{sup 1/2} input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f{sub 0} = 20 MHz) from 5 V supply, and occupy 0.5 mm{sup 2}.

2009-02-15

A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized silicon

Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, the full I and V ...

2004-12-15

A Novel VLSI Architecture of Fixed-complexity Sphere Decoder

The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

2005-12-05

CERN Document Server

Fixed-complexity Sphere Decoder (FSD) is a recently proposed technique for Multiple-Input Multiple-Output (MIMO) detection. It has several outstanding features such as constant throughput and large potential parallelism, which makes it suitable for efficient VLSI implementation. However, to our best knowledge, no VLSI implementation of FSD has been reported in the literature, although some FPGA prototypes of FSD with pipeline architecture have been developed. These solutions achieve very high throughput but at very high cost of hardware resources, making them impractical in real applications. In this paper, we present a novel four-nodes-per-cycle parallel architecture of FSD, with a breadth-first processing that allows for short critical path. The implementation achieves a throughput of 213.3 Mbps at 400 MHz clock frequency, at a cost of 0.18 mm2 Silicon area on 0.13{\\mu}m CMOS technology. The proposed solution is much more economical compared with the existing ...

2010-01-01

Metal contacts to n-GaN

Implications of high temperature superconductors for power generation

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg. C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg. C. The surface of Au and Ti/Au contacts annealed at 900 deg. C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at 900 deg. C. X-ray ...

2006-11-15

Experience with pressuriser for PHT pressure control in TAPP 4 reactor

Superconducting generators for high power applications have been of interest for a number of years. Superconducting generators using low temperature superconductors (LTS) have been manufactured to produce up to 20 MW of electrical power and have been configured in either synchronous alternators which have an AC output that may be subsequently rectified to produce DC and homopolar generators which produce low voltage DC. Typically these generators require scrupulous attention to vacuum integrity for cryogenic insulation at 4.2K and tend to be somewhat fragile because of extensive thermal and magnetic shields that are not required in conventional power generators. Recently, high purity aluminum composites have been developed for a high power AC generator that is cooled by cryogenic hydrogen at 21K. This aluminum generator is very compact and lightweight and is much more robust than a generator made with LTS because extensive thermal and magnetic shields are not ...

1991-08-03

Dynamic behaviour of dc double anode plasma torch at atmospheric pressure

In a 540 MWe PHWR reactor at TAPP-4 the pressuriser has been incorporated in the PHT pressure control system to provide the necessary vapour cushion for PHT main circuit to reduce pressure variations due to transients involving swell and shrinkage. Need for the Pressuriser is due to the large inventory in PHT main circuit and relatively large heat source. The incorporation of Pressuriser is one of the modifications while upgrading from prevalent operating 220 MWe reactors to the present 540 MWe at TAPP-4. The sizing, design and selection of the 540 MWe Pressuriser has been done w.r.t swell/shrinkage requirement during normal/transient operation of the reactor. In this paper the commissioning and operating experience of the Pressuriser in conjunction with the PHT pressure control system is presented. During light water commissioning of PHT circuit some major hurdles like failure of pressuriser heaters due to faulty instrumentation were faced. Subsequently the following corrective action ...

2006-11-13

Design and operating experience of a 40 MW, highly-stabilized power supply

An original dc double anode plasma torch which provides a long-time and highly stable atmospheric plasma jet has been devised for the purpose of hazardous waste treatment. The arc fluctuations and dynamic behaviour of the argon and argon-nitrogen plasma jets under different operating conditions have been investigated by means of classical tools, such as the statistic method, fast Fourier transform (FFT) and correlation analysis. In our experiments, the takeover mode is identified as the fluctuation characteristic of the argon plasma jet while the restrike mode is typical in the argon-nitrogen plasma dynamic behaviour. In the case of pure argon, the FFT and correlation calculation results of electrical signals exhibit the only characteristic frequency of 150 Hz, which originates from the torch power and is independent of any change in the operating conditions. It indicates that the nature of fluctuations in an argon plasma jet is mainly induced by the undulation of the tri-phase ...

2007-07-07

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1#mu#m CMOS devices

Four 10 MW, highly-stabilized power supply modules have been installed at the National High Magnetic Field Laboratory in Tallahassee, FL, to energize water-cooled, resistive, high-field research magnets. The power supply modules achieve a long term current stability if 10 ppM over a 12 h period with a short term ripple and noise variation of <10 ppM over a time period of one cycle. The power supply modules can operate independently, feeding four separate magnets, or two, three or four modules can operate in parallel. Each power supply module consists of a 12.5 kV vacuum circuit breaker, two three-winding, step-down transformers, a 24-pulse rectifier with interphase reactors, and a passive and an active filter. Two different transformer tap settings allow rated dc supply output voltages of 400 and 500 V. The rated current of a supply module is 17 kA and each supply module has a one-hour overload capability of 20 kA. The isolated output terminals of each power ...

1995-07-01

Sandia LSI accelerated aging and data acquisition techniques

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses from 3E14 to 5E15at/cm"2 using PULSION"(R) ...

2005-08-01

Large Scale Laser Two-Photon Polymerization Structuring for Fabrication of Artificial Polymeric Scaffolds for Regenerative Medicine

The purpose of the Microelectronic Evaluation Laboratory at Sandia is to develop a program for evaluating CMOS LSI (complementary metal oxide silicon - large scale integrated) technology devices which are being used for the first time in a weapon system. These evaluations are based on accelerated aging studies and electrical tests to determine the reliability and life of the devices. In accelerated aging, specific, controlled stresses are applied to the device to accelerate time-to-failure. Data are used tin mathematical models to estimate life in acutal use. The stresses used for this technology are temperature and voltage. The devices are stored at temperatures with or without voltage applied (steady-state or cyclical) and periodically tested until at least 50% failures are encountered. Since most current technologies use epoxy-die-attachment, aging temperatures must be under 200/sup 0/C. This delays device failure, and a 16% failure level is used when this ...

1980-04-01

1 2 3 4 5

Resonant overvoltage phenomena caused by transmission line faults

We present a femtosecond Laser Two-Photon Polymerization (LTPP) system of large scale three-dimensional structuring for applications in tissue engineering. The direct laser writing system enables fabrication of artificial polymeric scaffolds over a large area (up to cm in lateral size) with sub-micrometer resolution which could find practical applications in biomedicine and surgery. Yb:KGW femtosecond laser oscillator (Pharos, Light Conversion. Co. Ltd.) is used as an irradiation source (75 fs, 515 nm (frequency doubled), 80 MHz). The sample is mounted on wide range linear motor driven stages having 10 nm sample positioning resolution (XY--ALS130-100, Z--ALS130-50, Aerotech, Inc.). These stages guarantee an overall travelling range of 100 mm into X and Y directions and 50 mm in Z direction and support the linear scanning speed up to 300 mm/s. By moving the sample three-dimensionally the position of laser focus in the photopolymer is changed and one is able to write complex 3D ...

2010-11-10

How Do Police Respond to Stalking? An Examination of the Risk Management Strategies and Tactics Used in a Specialized Anti-Stalking Law Enforcement Unit

Resonant overvoltages in EHV transformers can be initiated by transmission line faults. A series of field tests were performed on the 151 mile long Kammer-Marysville 765 kV line in which a sequence of single line to ground faults were applied to one outside phase at 4 different locations. Fault location criteria and fault initiation procedures are presented. Oscillograms recorded the 3 phase response at both terminals of the line; one is transformer terminated, the other is open-ended. A frequency spectrum analysis of the waveforms is provided showing transient frequencies of sufficient magnitude and duration near the EHV transformer's resonant frequency to stimulate internal winding resonant overvoltages. Digital computer studies are presented and agree with the field tests quite favorably.

1985-09-01

British Library Electronic Table of Contents (United Kingdom)

How do police respond to and manage complaints of stalking? To answer this question, we conducted a 3-phase study. First, we reviewed the literature to identify risk management tactics used to combat stalking. Second, we asked a group of police officers to review those tactics for completeness and group them into categories reflecting more general risk management strategies. The result was 22 categories of strategies. Finally, we used qualitative methods to evaluate the files of 32 cases referred to the specialized anti-stalking unit of a metropolitan police department. We coded specific risk management tactics and strategies used by police. Results indicated that a median number of 19 specific tactics from 7 general strategies were used to manage risk. Also, the implementation of strategi...

2011-01-01

Effect of Al and AlP on the microstructure of Mn-30 wt.%Si alloy

Disordered bcc ;3;-phase to δ-phase transformation in Zr-rich U-Zr alloy

Effect of Al and AlP particles on the microstructure of near eutectic Mn-Si alloy (Mn-30 wt.%Si) was studied by Electron Probe Micro-analyzer (EPMA) and Differential Scanning Calorimeter (DSC). Crystal lattice correspondence analyses show that both Al and AlP have good lattice matching coherence relationships with MnSi phase, and the addition of Al and AlP particles results in an abnormal eutectic structure, i.e. the eutectic constitution MnSi and Mn{sub 5}Si{sub 3} precipitate separately: MnSi precipitates firstly, and then the Mn{sub 5}Si{sub 3} phase.

2008-04-15

British Library Electronic Table of Contents (United Kingdom)

The transformation mechanism of hexagonal delta phase from the disordered bcc gamma phase has not been reported before in the Zr-rich U-Zr alloy system. With the help of X-ray diffraction, transmission electron microscopy (TEM) and high-resolution TEM analyses it was shown that the gamma to delta conversion takes place by the lattice collapse mechanism of omega transformation. It was also ascertained that a higher aging temperature or time promotes the growth of all four variants of the delta phase within a parent gamma grain. In addition, ab initio electronic structure calculations showed that the bcc to hexagonal transformation, involving partial ordering of the parent bcc phase followed by (111) plane collapse, is energetically favorable.

2011-01-01

3 phase-3 wire 10kW interconnected inverter for photovoltaic power generation; Sanso sansen 10kW taiyoko hatsuden`yo keito renkei inverter

An Insoluble Titanium-Lead Anode for Sulfate Electrolytes

Inverter introduced in this paper is intended for use in medium-capacity photovoltaic power generation systems designed for industries in general. Interconnection is carried out at a low-voltage 210V point receiving from a commercial 3 phase-3 cable 6.6kV high voltage incoming panel. So as to ensure stable extraction of power in the maximum degree from a photovoltaic power generation system that is naturally unstable, this inverter monitors voltage and power, and behaves in a fully automated way. A maximum power point tracking (MPPT) control function is provided, which measures the power level at the current operating voltage point A, changes the operating voltage to a voltage value B which is lower than the point A voltage by 3V and to a voltage value C which is higher than the point A voltage by 3V, and measures the power level at each point. Comparison is then made between the values measured at the said points on a PV profile, and the ...

1997-10-30

Using the alkoxomethod to obtain the oxide phases of Fe_2O_3-Y_2O_3 system

The project is devoted to the development of novel insoluble anodes for copper electrowinning and electrolytic manganese dioxide (EMD) production. The anodes are made of titanium-lead composite material produced by techniques of powder metallurgy, compaction of titanium powder, sintering and subsequent lead infiltration. The titanium-lead anode combines beneficial electrochemical behavior of a lead anode with high mechanical properties and corrosion resistance of a titanium anode. In the titanium-lead anode, the titanium stabilizes the lead, preventing it from spalling, and the lead sheathes the titanium, protecting it from passivation. Interconnections between manufacturing process, structure, composition and properties of the titanium-lead composite material were investigated. The material containing 20-30 vol.% of lead had optimal combination of mechanical and electrochemical properties. Optimal process parameters to manufacture the anodes were identified. Prototypes having ...

2005-05-11

Preparation and characterization of Co-doped BaTiO{sub 3} nanosized powders and ceramics

Production of Fe_2O_3, Y_2O_3, YFeO_3, Y_3Fe_5O_1_2 powders using the alkoxomethod - during hydrolysis by yttrium and iron alcohol solutions, is studied. It is stated that production of the powders of Y_2O_3-Fe_2O_3 system oxides using alkoxomethod permits to decrease essentially the reaction volumes, number of operations, their duration as compared to the cooxidation of oxide hydrates from inorganic salt aqueous solutions. During heat treatment of iron (3) alcohol hydrolysis products #gamma#-Fe_2O_3 is first crystallized by contrast to #alpha#-FeOOH, usually produced by deposition from solutions. Further heat treatment of #gamma#-Fe_2O_3 results in production of #alpha#-Fe_2O_3. Conditions for crystallization of Y_3Fe_5O_1_2 and YFeO_3 phases, prepared by both methods, and their crystallite mean sizes are close, but the powders obtained from alcohols are more homogeneous.

Measurement of "1"0"1Tc Half-Life

The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the dielectric constant of the ceramics doping with Co was higher than that of the pure BaTiO{sub 3} ceramics. ...

2006-08-25

Innovative Clean Coal Technology (ICCT): 180 MW demonstration of advanced tangentially-fired combustion techniques for the reduction of nitrogen oxide (NO{sub x}) emissions from coal-fired boilers. Phase 1, Baseline tests

75 mg (NH_4)_6Mo_7O_24 #centre dot# 4H_2O solution was irradiated for 20 min in miniature neutron source reactor (MNSR) and cooled for 12 min. In the conditions of 0.8 mol/L HNO_3, phase ratio 1:1, the solution of "1"0"1Tc sample was extracted twice with #alpha#-benzoin oxime/ethyl acetate phase to remove "1"0"1Mo and a radiochemically pure and carrier-free "1"0"1Tc product was obtained. The half-life of "1"0"1Tc was accurately measured with a HPGe #gamma#-detector by following 306.8 keV #gamma#-ray about 150 min, and processed the data by three methods, R-value method, iterative method and translation method. Five parallel measurments gave a half-life (14.02 #+-# 0.01) min (n=5) for "1"0"1Tc. (authors)

2009-11-01

Innovative Clean Coal Technology (ICCT): 180 MW demonstration of advanced tangentially-fired combustion techniques for the reduction of nitrogen oxide (NO sub x ) emissions from coal-fired boilers

The primary objective of the project is to investigate the long-term effects of commercially available tangentially-fired low NO{sub x} combustion technologies on NOx emissions and boiler performance on Unit 2 at Gulf Power Company`s Plant Lansing Smith located near Lynn Haven, Florida. The project will characterize emissions and performance of a tangentially-fired boiler operating in the following configurations: Baseline ``as-found`` configuration: Phase 1; retrofitted low NO{sub x} concentric firing system (LNCFS) Level 2 and simulated low NO{sub x} bulk furnace staging (LNBFS): Phase 2; retrofitted low NO{sub x} concentric firing system (LNCFS) Level 3, Phase 3a and simulated LNCFS Level 1, Phase 3b.

1992-01-01

Evolution of magnetic structures in the UNi{sub 2}Si{sub 2}-UPd{sub 2}Si{sub 2} system

The primary objective of the project is to investigate the long-term effects of commercially available tangentially-fired low NO{sub x} combustion technologies on NOx emissions and boiler performance on Unit 2 at Gulf Power Company's Plant Lansing Smith located near Lynn Haven, Florida. The project will characterize emissions and performance of a tangentially-fired boiler operating in the following configurations: Baseline as-found'' configuration: Phase 1; retrofitted low NO{sub x} concentric firing system (LNCFS) Level 2 and simulated low NO{sub x} bulk furnace staging (LNBFS): Phase 2; retrofitted low NO{sub x} concentric firing system (LNCFS) Level 3, Phase 3a and simulated LNCFS Level 1, Phase 3b.

1992-01-01

Evolution of magnetic structures in the UNi_2Si_2-UPd_2Si_2 system

The influence of Pd-Ni substitution on the formation of magnetic phases in the tetragonal U(Ni{sub 1-x}, Pd{sub x}){sub 2}Si{sub 2} system and the concentration magnetic phase diagram are presented. A series of different substitutions was prepared and detailed studies by powder neutron diffraction were performed for x=0.25, 0.5 and 0.75. All compounds order antiferromagnetically and form ferromagnetic basal planes stacked along the c axis (q=(0,0,q{sub z}) propagation). The ground-state phase (AF3) of UNi{sub 2}Si{sub 2} is an uncompensated AF structure (++- stacking (q{sub z}=2/3)). In UPd{sub 2}Si{sub 2} the ground-state phase corresponds to the simple AF structure AF2 (+-+-(q{sub z}=1)). In solid solutions, no traces of the AF3 phase were found for x=0.25 and the ground-state powder patterns correspond to AF2 for x{>=}0.25. (orig.)

2002-07-01

Diffusion research between Ni3Al coating and titanium alloy produced by plasma spraying process

The influence of Pd-Ni substitution on the formation of magnetic phases in the tetragonal U(Ni_1_-_x, Pd_x)_2Si_2 system and the concentration magnetic phase diagram are presented. A series of different substitutions was prepared and detailed studies by powder neutron diffraction were performed for x=0.25, 0.5 and 0.75. All compounds order antiferromagnetically and form ferromagnetic basal planes stacked along the c axis (q=(0,0,q_z) propagation). The ground-state phase (AF3) of UNi_2Si_2 is an uncompensated AF structure (++- stacking (q_z=2/3)). In UPd_2Si_2 the ground-state phase corresponds to the simple AF structure AF2 (+-+-(q_z=1)). In solid solutions, no traces of the AF3 phase were found for x=0.25 and the ground-state powder patterns correspond to AF2 for x#>=#0.25. (orig.)

British Library Electronic Table of Contents (United Kingdom)

A Ni3Al coating was prepared by plasma spraying technique on the surface of titanium alloy. Ni-Al mixed powders, coatings and reaction products were investigated by scanning electron microscope, EDS, DSC and XRD. A tight bonding between the coating and the substrate was formed. The X-ray diffraction analysis of the patterns showed that the coating not only had Ni3Al phase, but also had NiO and Al2O3 phase microcontent. Comparing Ni coated Al to Ni3Al at 900^oC, the diffusion was stronger and the diffusion layer was thicker. A minute pore structure was formed at 1200^oC in the front edge of solid-state reaction layer. So Ni3Al restrained the solid-state reaction of the coating with the substrate, and as a whole weakened the entry of oxygen atoms into the substrate and quenched the out-diffu...

2010-01-01

Development of flame retardant PV module encapsulants: Volume 1. Final report

Preparation of ZnO-Al2O3 Particles in a Premixed Flame

This Phase 1 final report covers the work performed by Springborn Testing and Research, Inc., for the period October 1, 1997 to June 30, 1998 under the Department of Energy Cooperative Agreement Number DE-FC36-97GO10255, entitled Development of Flame Retardant PV Module Encapsulants. While use of roof-mounted arrays has always been an attractive means of deploying PV, only within recent years have such building integrated concepts (BIPV) found renewed interest among module makers and end-users. Prior to building integrated and rooftop applications, flammability requirements for modules have not been a great industry concern. However, with growing interest in BIPV and the requirement for building code requirements for commercial and industrial structures, flammability issues have become a barrier to entry for many module constructions into this potentially huge domestic market for PV. The overall goal of the 3 phase PV BONUS two project is to ...

1998-06-01

DEFF Research Database (Denmark)

Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement of the BET specific surface area. Pure (?-)alumina particles appear as dendritic aggregates with average mobile diameter 43-93 nm consisting of partly sintered, crystalline primary particles with diameter 7.1-8.8 nm and specific surface area 184-229 m2/g. Pure zinc oxide yields compact, crystalline particles with diameter 25-40 nm and specific surface area 27-43 m2/g. The crystallite size for both oxides, estimated from the XRD line broadening, is comparable to or slightly smaller than the primary particle diameter. The specific surface area increases and the primary particle size decreases with a decreasing flame temperature and a decreasing precursor vapour pressure. The combustion of ...

2000-01-01

Performance of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} prepared by solid-state reaction

A structural and thermodynamic basis for the catalytic behavior of single phase and multiphase bismuth cerium molybdate ammoxidation catalysts

LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} was prepared through a solid-state reaction using various Ni precursors. The effect of precursors on the electrochemical performance of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} was investigated. LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} made from Ni(NO{sub 3}){sub 2}.6H{sub 2}O shows the best charge-discharge performance. The reversible capacity of LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} is about 145 mAh g{sup -1} and remained 143 mAh g{sup -1} after 10 cycles at 3.0-5.0 V. The XRD results showed that the precursors and the dispersion methods had significant effect on their phase purity. Pure spinel phase can be obtained with high energy ball-milling method and Ni(NO{sub 3}){sub 2}.6H{sub 2}O as precursor. Trace amount of NiO and Li{sub 2}MnO{sub 3} phase were detected in LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} with manual-mixture method and using Ni(CH{sub 3}COO){sub 2}.6H{sub 2}O, NiO and Ni{sub 2}O{sub 3} as precursors. (author)

2009-04-01

Multiphasic helical CT of hepatocellular carcinoma. Evaluation after chemo embolization

The vast majority of fundamental studies of metal oxide selective oxidation catalysts have been performed with single phase systems. These investigations established the basic tenents of the redox mechanism of selective oxidation and ammoxidation catalysis. By comparison, structural and kinetic investigations of multiphase oxide catalysts are less numerous because of the inherent difficulties in understanding the relative contributions of separate phases to the catalytic behavior of the composite catalyst. Some attempts have been made in the past to understand the complex chemistry of multiphase catalysts and additional important insights have been realized more recently. However, a clear understanding of the most significant catalytic interactions between individual phases of a multiphase multicomponent redox catalyst is still lacking. In an effort to provide an understanding and a physical basis for the observed synergism in multiphase oxide catalysts, the structural and chemical ...

1983-09-01

Decommissioning of French nuclear submarines

The main purpose of this work is to report the personal experience with addition of contrast-enhanced multiphase helical CT to unenhanced CT (Lipiodol CT) in the evaluation of patients with hepatocellular carcinoma treated with chemoembolization and to analyze the present role of oily agent CT. It has been retrospectively reviewed the examinations of 42 consecutive patients submitted to globla chemoembolization over a 2-year period. CT was performed 18-30 days after the treatment. The Lipiodol CT study was carried out with volume acquisitions. It has been considered as nodules all well-defined areas with dense oily agent uptake; uptake itself was classified as: 0=absent, I=lower tha 10% of the tumor volume; II=lower than 50%, III=50%, IV=homogeneous. Contrast-enhanced helical CT was performed with the 2-phase technique in 28 patients and with the 3-phase technique in 14; it has been considered as nodules all well-defined and relatively ...

2000-06-01

1 2 3 4 5

Multiphasic helical CT of hepatocellular carcinoma. Evaluation after chemoembolization; Tomografia Computerizzata spirale multifasica dell'epatocarcinoma. Valutazione dopo chemioembolizzazione

Since the beginning of the sixties, France has developed a fleet of nuclear powered vessels. Insofar as the ships of the 2. generation are being built, the older ones are decommissioned and enter the dismantling process. The average rate is presently one submarine decommissioned every two or three years. The overall strategy for the decommissioning of French nuclear submarines can be brought down to 3 phases: 1. Level 1 dismantling which essentially consists in: - unloading the spent fuel and storing it in a pool ; - possibly emptying the circuits which contain radioactive liquids. The level 1 is easily achieved, as it is not very different from the plant situation during ship overhaul or major refits. 2. Level 2 dismantling which consists in isolating the nuclear reactor compartment from the rest of the submarine and conditioning it for interim storage on a ground facility located inside Cherbourg Naval Dockyard. The rest of the ship is ...

2003-07-01