WorldWideScience
 
 
1

Terahertz time-domain spectroscopy of atmospheric water vapor from 0.4 to 2.7 THz.  

Energy Technology Data Exchange (ETDEWEB)

We conducted broadband absorption measurements of atmospheric water vapor in the ground state, X {sup 1}A{sub 1} (000), from 0.4 to 2.7 THz with a pressure broadening-limited resolution of 6.2 GHz using pulsed, terahertz time-domain spectroscopy (THz-TDS). We measured a total of seventy-two absorption lines and forty-nine lines were identified as H{sub 2}{sup 16}O resonances. All the H{sub 2}{sup 16}O lines identified were confirmed by comparing their center frequencies to experimental values available in the literature.

2005-10-01

2

Channelrhodopsin-2 gene transduced into retinal ganglion cells restores functional vision in genetically blind rats  

British Library Electronic Table of Contents (United Kingdom)

To test the hypothesis that transduction of the channelrhodopsin-2 (ChR2) gene, a microbial-type rhodopsin gene, into retinal ganglion cells of genetically blind rats will restore functional vision, we recorded visually evoked potentials and tested the experimental rats for the presence of optomotor responses. The N-terminal fragment of the ChR2 gene was fused to the fluorescent protein Venus and inserted into an adeno-associated virus to make AAV2-ChR2V. AAV2-ChR2V was injected intravitreally into the eyes of 6-month-old dystrophic RCS (rdy/rdy) rats. Visual function was evaluated six weeks after the injection by recording visually evoked potentials (VEPs) and testing optomotor responses. The expression of ChR2V in the retina was investigated histologically. We found that VEPs could not b...

2010-01-01

3

Improved Understanding of the Bacterial Vaginal Microbiota of Women before and after Probiotic Instillation  

UK PubMed Central (United Kingdom)

The vaginal bacterial microbiota of 19 premenopausal women was examined by PCR-denaturing gradient gel electrophoresis (DGGE) and sequencing of the V2-V3 region of the 16S rRNA gene. Ten of the women...Full Text Available

2003-01-01

4

Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications  

International Nuclear Information System (INIS)

A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

1996-07-15

5

Transformation of the ATOMKI-ECRIS into a Plasma Device  

International Nuclear Information System (INIS)

Complete text of publication follows. In order to extend the capabilities of the electron cyclotron resonance (ECR) ion source (ECRIS) of ATOMKI it has been transformed into a special plasma facility [1,2]. The transformation is reversible and was simply done by changing several main components of the ion source by new ones, namely: the hexapole magnet, the plasma chamber and the microwave source. The basic requirements of the transformation were: (1) most parts of the present ECRIS should be used in the new assembly in the same way and (2) the transformation time between the two operation modes should not be more than 2-3 days (in both directions). The following sub-systems are used identically in both configurations: solenoid coils, vacuum system, gas dosing system, ovens, probes. The extraction optics and beam transport system can also be used in the new configuration to check the components and charge-state of the plasma. A new, large, but unusually thin cylindrical NdFeB hexapole ...

2006-01-01

6

Thin TiO2 grown by metal?organic chemical vapor deposition on (NH4)2S x -treated InP  

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

2011-01-01

7

Simulation of the crystal field effect on the Pr"3"+ ion in K_2La_1_-_xPr_xCl_5 ternary chlorides  

International Nuclear Information System (INIS)

The high resolution absorption, luminescence and excitation spectra of the orthorhombic potassium lanthanum praseodymium ternary chloride, K_2La_1_-_xPr_xCl_5, (0.02 #<=# x #<=# 0.15) single crystals were recorded at 4, 77 and 293 K with different excitation sources. The experimental 4f"2 energy level scheme of the Pr"3"+ ion in K_2LaCl_5 derived from the absorption and emission spectra consisted of 86 (out of 91) Stark components. This energy level scheme was simulated by using a phenomenological crystal field (cf) model which included eight free ion and nine cf parameters according to the C_2_v symmetry. Despite the approximate C_2_v point symmetry instead of the real C_s one, the simulation yielded a very satisfactory rms deviation of 17 cm"-"1 between the experimental and calculated energy level schemes. The results, especially the weak cf strength, are discussed taking into account the ...

2004-10-20

8

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions  

Energy Technology Data Exchange (ETDEWEB)

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co{sub 2}MnSi (CMS) and Co{sub 2}FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO{sub 2}/V/CMS/MgO/CFS and SiO{sub 2}/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co{sub 2}MnSi.

2009-05-15

9

Chemical properties of positive singly charged astatine ion in aqueous solution  

Energy Technology Data Exchange (ETDEWEB)

The mobility of oxidized astatine in solutions H(Na)ClO/sub 4/ (..mu..=0.4M)-1.10/sup -4/M K/sub 2/Cr/sub 2/O/sub 7/ has been measured at 25 degC in the interval 0.63<=pH<=1.68. Under these conditions astatine migrates to the cathode only. The speeds of the migration depends upon the concentration of hydrogen ions in solutions are: pH 1.68 Usub(c)=1.17.10/sup -4/ cm/sup 2/ V/sup -1/ s/sup -1/; pH 0.63 Usub(c)=2.67.10/sup -4/ cm/sup 2/ V/sup -1/ s/sup -1/. The effect agrees with the opinion that the singly charged cation of astatine formed in acidic solutions is a strong aquacomplex ((H/sub 2/O)sub(x)At)/sup +/ (x=1-2) (protonated hypoastatic acid). Deprotonation constant of this cation is Ksub(dp)=0.032+-0.005. Specific properties of the astatine cation are given. They can be explained, probably, through the peculiarities of its structure. 14 refs.

1984-08-01

10

Chemical properties of positive singly charged astatine ion in aqueous solution  

International Nuclear Information System (INIS)

The mobility of oxidized astatine in solutions H(Na)ClO_4 (#mu#=0.4M)-1.10"-"4M K_2Cr_2O_7 has been measured at 25 degC in the interval 0.63<=pH<=1.68. Under these conditions astatine migrates to the cathode only. The speeds of the migration depends upon the concentration of hydrogen ions in solutions are: pH 1.68 Usub(c)=1.17.10"-"4 cm"2 V"-"1 s"-"1; pH 0.63 Usub(c)=2.67.10"-"4 cm"2 V"-"1 s"-"1. The effect agrees with the opinion that the singly charged cation of astatine formed in acidic solutions is a strong aquacomplex [(H_2O)sub(x)At]"+ (x=1-2) (protonated hypoastatic acid). Deprotonation constant of this cation is Ksub(dp)=0.032+-0.005. Specific properties of the astatine cation are given. They can be explained, probably, through the peculiarities of its structure. (author).

11

Polysilicon TFT fabrication on plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

1997-08-06

12

Are classical tachyons slower-than-light quantum particles  

Energy Technology Data Exchange (ETDEWEB)

After having studied the shape that a tachyon T (e.g., intrinsically spherical) would take up, we show in an explicit example that the characteristics of classical tachyons are similar to those of the ordinary (slower-than-light) quantum particles. In particular, a realistic tachyon is associated with a ''phase speed'' V(V/sup 2/>c/sup 2/), but with a ''group speed'' upsilon=c/sup 2//V (upsilon/sup 2/

1983-07-02

13

A correlation between electrochemical parameters and stress corrosion cracking of alloy 600 in high temperature caustic solution  

International Nuclear Information System (INIS)

The properties of the passive films formed on Alloy 600 at different applied potentials in 10% NaOH solution at 315 .deg. C was studied using in situ AC impedance and polarization measurements. The results were correlated with the stress corrosion cracking (SCC) behavior obtained from the C-ring tests in the same conditions. The change of the semiconductive property and the peak of relaxation time were observed at 0.2 V where the SCC rate showed a maximum. These results were also consistent with the prediction parameter for SCC obtained from fast and slow polarization scans.

2001-10-01

14

In situ determination of the composition of surface films formed on Fe-Cr alloys  

Energy Technology Data Exchange (ETDEWEB)

A method for using in situ X-ray absorption near edge spectroscopy to determine the composition of passive, transpassive, and nonreducible thin oxide films is described. The method is demonstrated by determining the composition of the passive films formed in pH 4.5, 0.1 M acetate buffer, on 100 {angstrom} thick Fe-yCr alloys (y = 8.5, 15, 19, 23 atom %) at potentials: (1) low in the passive region ({minus}0.3 V vs. mercurous sulfate reference electrode, MSE); (2) high in the passive region; (3) in the transpassive region; and (4) in the cathodic region where the air-formed film is not fully reduced. The nonreducible film at {minus}1.2 V is entirely a Cr{sup 3+} oxide/hydroxide. This nonreducible film persists at anodic potentials. At {minus}0.3 V, the passive film on each alloy is significantly enriched in Cr. The film at {minus}0.3 V consists primarily of the nonreducible Cr{sup 3+} oxide/hydroxide plus a very small amount of additional ...

1998-06-01

15

Enhancement of long-term stability of pentacene thin-film transistors encapsulated with transparent SnO{sub 2}  

Energy Technology Data Exchange (ETDEWEB)

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO{sub 2} thin-film prepared by ion beam-assisted deposition (IBAD) was investigated. After encapsulation process, our organic thin-film transistors (OTFTs) showed somewhat degraded field-effect mobility of 0.5 cm{sup 2}/(V s) that was initially 0.62 cm{sup 2}/(V s), when a buffer layer of thermally evaporated 100 nm SnO{sub 2} film had been deposited prior to IBAD process. However, the mobility was surprisingly sustained up to 1 month and then gradually degraded down to 0.35 cm{sup 2}/(V s) which was still three times higher than that of the OTFT without any encapsulation layer after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over 10{sup 5} to that of the unprotected devices ({approx}10{sup 4}) which was reduced ...

2005-12-15

16

Transport properties of single-crystalline n-type semiconducting PbTe nanowires  

International Nuclear Information System (INIS)

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

2009-10-14

17

Transmission electron microscopy of undermined passive films on stainless steel  

Energy Technology Data Exchange (ETDEWEB)

A study has been made of the passive film remaining over pits on stainless steel using a high resolution transmission electron microscope. Type 305 stainless steel was passivated in a borate buffer solution and pitted in ferric chloride. Passive films formed at 0.2 V relative to a saturated calomel electrode were found to be amorphous. Films formed at higher potentials showed only broad diffraction rings. The passive film was found to cover a remnant lacy structure formed over pits passivated at 0.8 V. The metallic strands of the lace were roughly hemitubular in shape with the curved surface facing the center of the pit.

1999-06-01

18

The Effect of Contacts on the Counting Characteristics of Heavily Doped Normal-Type Cadmium-Telluride  

Science.gov (United States)

Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.

1985-01-01

19

Testing an agent-based model of bacterial cell motility: How nutrient concentration affects speed distribution  

British Library Electronic Table of Contents (United Kingdom)

We revisit a recently proposed agent-based model of active biological motion and compare its predictions with own experimental findings for the speed distribution of bacterial cells, Salmonella typhimurium. Agents move according to a stochastic dynamics and use energy stored in an internal depot for metabolism and active motion. We discuss different assumptions of how the conversion from internal to kinetic energy d(v) may depend on the actual speed, to conclude that d 2 v ? with either ? = 2 or 1 ? < 2 are promising hypotheses. To test these, we compare the model?s prediction with the speed distribution of bacteria which were obtained in media of different nutrient concentration and at different times. We find that both hypotheses are in line with the experimental observations, with ? bet...

2011-01-01

20

Site occupancies in ternary C15 ordered Laves phases  

Energy Technology Data Exchange (ETDEWEB)

Site occupancies in three C15-structured AB{sub 2}(X) Laves phases have been determined by Atom Location by CHanneling Enhanced MIcroanalysis (ALCHEMI). In NbCr{sub 2}(V), the results were consistent with exclusive site occupancies of Nb for the A sublattice and Cr and V for the B sublattice. The B-site occupancy of V is not expected from atom size effects alone. In NbCr{sub 2}(Ti), the results were consistent with Ti partitioning mostly to the A sites with some anti-site defects likely. In HfV{sub 2}(Nb), the results were consistent with Nb partitioning between the A and B sites. The results of the ALCHEMI analyses of these ternary C15 Laves phase materials will be discussed with respect to previously determined phase diagrams and first-principles total energy and electronic structure calculations.

1996-12-31

 
 
 
 
21

Picosecond pulse-conductivity technique applied to study excess-electron reactions in hydrocarbon mixtures  

Energy Technology Data Exchange (ETDEWEB)

To measure electron reactions on a picosecond timescale the investigators developed a picosecond pulse-conductivity technique, which makes use of the electron fine-structure pulses of our LINAC (pulse width 25 vs FWHM) to produce excess electrons and now detects changes in sample conductance under optimum conditions with an instrumental response of 18 ps. This resolution is in agreement with a theoretical estimate. This technique has been successfully applied to study excess electron reactions in solvents covering a mobility range from 0.24 to 100 cm/sup 2/V/sup -1/s/sup -1/; extension to lower mobility liquids seem possible.

1983-01-01

22

Length-sorted semiconducting carbon nanotubes for high-mobility thin film transistors  

British Library Electronic Table of Contents (United Kingdom)

We have developed a process for chemical purification of carbon nanotubes for solution-processable thin-film transistors (TFTs) having high mobility. Films of the purified carbon nanotubes fabricated by simple drop coating showed carrier mobilities as high as 164 cm2V?1s?1, normalized transconductances of 0.78 Sm?1, and on/off current ratios of 106. Such high performance requires the preparation of a suspension of micrometer-long and highly purified semiconducting single-walled carbon nanotubes (SWCNTs). Our purification process includes length and electronic-type selective trapping of SWCNTs using recycling gel filtration with a mixture of surfactants. The results provide an important milestone toward printed high-speed and large-area electronics with roll-to-roll and ink-jet device fabri...

2011-01-01

23

Enantioselective separation of the carfentrazone-ethyl enantiomers in soil, water and wheat by HPLC  

British Library Electronic Table of Contents (United Kingdom)

A simple enantioselective HPLC method was developed for measuring carfentrazone-ethyl enantiomers. The separation and determination was accomplished on an amylose tris[(S)-a-methylbenzylcarbamate] (Chiralpak AS) column using n-hexane/ethanol (98:2, v/v) as mobile phase at a flow rate of 1.0 mL/min with UV detection at 248 nm. The effects of mobile-phase composition and column temperature on the enantioseparation were discussed. The accuracy, precision, linearity, LODs, and LOQ of the method were also investigated. LOD was 0.001 mg/kg in water, 0.015 mg/kg in soil and wheat, with an LOQ of 0.0025 mg/kg in water and 0.05 mg/kg in soil and wheat for each enantiomer of carfentrazone-ethyl. SPE was used for the enrichment and cleanup of soil, water, and wheat samples. Recoveries for two enantio...

2010-01-01

24

A variable step-down conversion ratio switched capacitor DC-DC converter for energy harvesting systems working in intermittent mode  

International Nuclear Information System (INIS)

Energy harvesting systems stimulate the development of power management for low power consumption applications. Improving the converter efficiency of power management circuits has become a significant issue in energy harvesting system design. This paper presents a variable step-down conversion ratio switched capacitor (SC) DC-DC converter to advance the converter efficiency of charge on the stored capacitor in a wireless monitoring system of orthopedic implants. The converter is designed to work at 1 MHz switching frequency and achieves 15 to 2 V conversion. Measurement results show that the converter efficiency can reach 42% including all circuit power consumption, which is much higher than previous work. (semiconductor integrated circuits)

2009-12-01

25

Simulation of the crystal field effect on the Pr{sup 3+} ion in K{sub 2}La{sub 1-x}Pr{sub x}Cl{sub 5} ternary chlorides  

Energy Technology Data Exchange (ETDEWEB)

The high resolution absorption, luminescence and excitation spectra of the orthorhombic potassium lanthanum praseodymium ternary chloride, K{sub 2}La{sub 1-x}Pr{sub x}Cl{sub 5}, (0.02 {<=} x {<=} 0.15) single crystals were recorded at 4, 77 and 293 K with different excitation sources. The experimental 4f{sup 2} energy level scheme of the Pr{sup 3+} ion in K{sub 2}LaCl{sub 5} derived from the absorption and emission spectra consisted of 86 (out of 91) Stark components. This energy level scheme was simulated by using a phenomenological crystal field (cf) model which included eight free ion and nine cf parameters according to the C{sub 2v} symmetry. Despite the approximate C{sub 2v} point symmetry instead of the real C{sub s} one, the simulation yielded a very satisfactory rms deviation of 17 cm{sup -1} between the experimental and calculated energy level schemes. The results, especially the ...

2004-10-20

26

Comparative study of the crystal field effects in rare earth oxynitrates  

Energy Technology Data Exchange (ETDEWEB)

The photoluminescence spectra of the lanthanum and gadolinium oxynitrates doped with Eu[sup 3+], REONO[sub 3]:Eu[sup 3+] (RE=La and Gd) were measured at 77 and 300 K. The [sup 7]F[sub J] (J=0-5) energy level schemes for the 4f [sup 6] electron configuration were simulated by a C[sub 2v] phenomenological crystal field (CF). The nine non-zero CF parameters for the C[sub 2v] site symmetry reproduce the experimental energy level schemes with rms deviations of 7 and 5 cm[sup -1] for the LaONO[sub 3] and GdONO[sub 3] hosts, respectively. The CF effect is stronger in the lanthanum host although otherwise the CF parameters for the two oxynitrate hosts differ only slightly. The B[sup k][sub 2] (k=2, 4 and 6) values are low indicating only a slight deviation from a higher C[sub 4v] symmetry. The B[sup 2][sub 0], B[sup 4][sub 0] and B[sup 4][sub 4] parameters assume high values which are similar to those obtained ...

1994-06-01

27

CO{sub 2} bands in the 3350 - 3700 cm{sup {minus}1} spectral region: Ro-vibrational constants and absolute intensities  

Energy Technology Data Exchange (ETDEWEB)

Spectroscopic constants and absolute intensities from more than 2150 transitions belonging to 52 bands of 7 isotopic species of carbon dioxide have been determined using a multispectrum nonlinear least-squares fitting technique. The spectral data (0.01 cm{sup -1} resolution) were obtained at room temperature and low pressure (<10 Torr) using the McMath-Pierce Fourier transform spectrometer of the National Solar Observatory on Kitt Peak, Arizona. A natural sample of carbon dioxide with absorption path lengths between 24 and 385m were used in recording the spectra. The first measurements have been made of the theoretically predicted 2v{sub 2}{sup 2} 2+v{sub 3} {open_quotes}forbidden{close_quotes} band of {sup 12}CO{sub 2}. Two bands which have not been predicted so far, one belonging to {sup 13}CO{sub 2} and the other to {sup 13}C{sup 16}O{sup 18}O, have been identified. The measured line intensities ...

1995-12-31

28

TMPRSS6 rs855791 modulates hepcidin transcription in vitro and serum hepcidin levels in normal individuals.  

Science.gov (United States)

The iron hormone hepcidin is inhibited by matriptase-2, a liver serine-protease encoded by TMPRSS6 gene. Cleaving the BMP-coreceptor hemojuvelin, matriptase-2 impairs the BMP/SMAD signaling pathway, downregulates hepcidin and facilitates iron absorption. TMPRSS6 inactivation causes iron-deficiency-anemia refractory to iron administration both in humans and mice. Genome wide association studies have shown that the SNP rs855791, which causes the matriptase-2 V736A amino acid substitution, is associated with variations of serum iron, transferrin saturation, hemoglobin and erythrocyte traits. Here we show that in vitro matriptase-2 736(A) inhibits hepcidin more efficiently than 736(V). Moreover, in a genotyped population, after exclusion of samples with iron deficiency and inflammation, hepcidin, hepcidin/transferrin saturation and hepcidin/ferritin ratios were significantly lower and iron parameters were consistently higher in homozygotes 736(A) ...

2011-08-26

29

Synthesis, Crystal Structure and Spectroscopic Properties of an Oximato Bridged Cu(II) Dimer  

British Library Electronic Table of Contents (United Kingdom)

Schiff-base condensation of a equimolar proportion of diacetyl-monoxime monohydrazone and 1-methylimidazole-2-carboxaldehyde in methanol gives rise to the imidazole azine, 3-(1-methylimidazol-2-yl)methylenehydrazonobutan-2-one oxime(HL). Reaction of 1:1 stoichiometric proportion of HL with copper(II)perchlorate hexahydrate in methanol yields a dimeric oximato bridged copper compound, [Cu2L2(H2O)2](ClO4)2 (1). The compound is characterized by C, H and N analyses, FT-IR, ESI?MS, conductivity measurement, UV?Vis spectra and X-ray single crystal diffraction. The title compound (1) crystallizes in the monoclinic space group P21/c with a?=?6.8533 (8), b?=?18.413 (2), c?=?11.7399 (14) ?, ??=?93.685 (2)?, V?=?1478.4 (3) ?3 and Z?=?2. The geometry around each copper center is distorted square pyram...

2011-01-01

30

Spectroscopic properties of Eu sup 3+ in lanthanum chlorotungstates  

Energy Technology Data Exchange (ETDEWEB)

The spectroscopic properties of Eu{sup 3+} doped into two lanthanum chlorotungstates matrices, namely LaWO{sub 4}Cl (1-1) and La{sub 3}WO{sub 6}Cl{sub 3}(3-1), are investigated. The fluorescence spectra of these compounds, recorded at room and liquid nitrogen temperatures, show that the lanthanide ion occupies only one site with the low symmetry, C{sub s}, in both cases. From the energy level schemes of the {sup 7}F{sub J} levels (J = 0, 1, 2, 3, 4, 5), two sets of crystal field parameters (cfp) are deduced, in a C{sub 2v} approximated point symmetry (i.e., 9 cfp), simulating the experimental data, correctly. Furthermore, for the 3-1 compound, the data is complete enough to extend the calculations to the real point group, C{sub s} (14 cfp).

1990-11-01

31

Sensitive detection of endocrine disrupters using ionic liquid - Single walled carbon nanotubes modified screen-printed based biosensors.  

Science.gov (United States)

Simple and low cost biosensor based on screen-printed electrode for sensitive detection of some alkylphenols was developed, by entrapment of HRP in a nanocomposite gel based on single-walled carbon nanotubes (SWCNTs) and 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIM][PF(6)]) ionic liquid. Raman and FTIR spectroscopy, CV and EIS studies demonstrate the interaction between SWCNTs and ionic liquid. The nanocomposite gel, SWCNT-[BMIM][PF(6)] provides to the modified sensor a considerable enhanced electrocatalytic activity toward hydrogen peroxide reduction. The HRP based biosensor exhibits high sensitivity and good stability, allowing a detection of the alkylphenols at an applied potential of -0.2V vs. Ag/AgCl, in linear range from 5.5 to 97.7?M for 4-t-octylphenol and respectively, between 5.5 and 140?M for 4-n-nonylphenol, with a response time of about 5s. The detection limit was 1.1?M for 4-t-octylphenol, and respectively 0.4?M for ...

2011-07-19

32

Selective dissolution and surface enrichment of alloy components of passivated Fe 18Cr and Fe 18Cr3Mo single crystals  

International Nuclear Information System (INIS)

The possible surface enrichment of chromium and molybdenum during dissolution of Fe18Cr (110) and Fe18Cr3Mo (110) alloys at constant potentials in the passive region is elucidated by taking into account quantitative information on partial dissolution rates of alloy components as measured by #gamma#-spectrometry and on chemical composition of passivating films as measured by ESCA and AES. When combining results from all methods it is found that chromium under all conditions is enriched in the passivating films. An accumulation of chromium in the alloy is also indicated. For molybdenum, an enrichment in the passive film is observed at -0.2 V (SCE), whereas in the potential interval 0.1 - 0.9 V, the molybdenum enrichment as determined by ESCA and AES is hardly significant. On the other hand, #gamma#-spectrometry gives a clear indication of molybdenum enrichment in both potential. (author).

2008-12-30

33

Retuning the APS storage ring for better chromaticity correction.  

Energy Technology Data Exchange (ETDEWEB)

When the APS storage ring was retuned to provide smaller {beta}{sub y} values in the insertion straight sections, it was necessary to increase the vertical tune by at least two units. Since the design values for the horizontal and vertical tunes are 35.22 and 16.30, respectively, this put the tunes dangerously close to the sextupole 2v{sub y}-v{sub x} coupling resonance. The large injection horizontal oscillations could couple to the vertical plane and exceed the 5-mm vertical apertures that exist in some of the insertion straight sections. To avoid this resonance, the vertical tune was raised beyond the resonance to 19.30. The result was a reduction in the ability of the chromaticity sextuples to correct the chromaticity. Recent investigation has shown that the chromaticity correction capability of the sextuples can be greatly increased by a modest increase in the horizontal tune. Increasing the horizontal tune by one unit and reducing the ...

1999-09-11

34

Radioanalytical determination of chromium in welding fumes  

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis and fast neutron activation analysis were used for the determination of chromium. The excitation source for X-ray fluorescence analysis was a ring-shaped "2"4"1Am source with an activity of 18.5x10"9 Bq. SYNPOR filters of 35 mm in diameter were used for the measurement. The 5.414 keV Cr peak was measured with a Si(Li) detector. The sensitivity was 0.05 mg for a period of measurement of 1000 s. A neutron generator with an emission of 10"9 s"-"1 was used as the source of fast neutrons. "5"2V and "5"3V, the products of nuclear reaction with Cr, were measured gamma spectrometrically with a Ge(Li) detector. The sensitivity for Cr is 0.015 mg, in the presence of Mn which causes interference the sensitivity is a mere 0.075 mg. The mentioned methods were used to determine total Cr and Cr(VI) in welding aerosols. It was found that the most toxic form, i.e., Cr(VI), is released during manual arc welding of high ...

1985-01-01

35

Polysilicon thin film transistors fabricated on low temperature plastic substrates  

Energy Technology Data Exchange (ETDEWEB)

We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

1999-07-01

36

Physical properties of Ti/sub 50/Be/sub 40/Zr/sub 10/ glass  

Science.gov (United States)

Continuous metallic glass ribbons were produced by mejans of liquid-quenching at rates >10/sup 50/C/s. The ribbons, typically 30 ..mu..m thick and 1 to 2 mm wide, were determined to be glassy by X-ray diffraction (XRD) employing CuK..cap alpha.. and MoK..cap alpha.. radiation. Mechanical properties of the as-quenched product were determined by measurements of hardness, tensile strength and Young's modulus. The Vicker's diamond pyramid microhardness (H/sub V/) was measured on epoxy mounted samples using a Lietz Miniload instrument with a 100 g load. Tensile tests were conducted in an Instron machine using specimens which were hand-polished to produce smooth, parallel sides. Young's modulus (E) is given by the relationship rho V/sub E/sup 2//. V/sub E/, the velocity of extensional mode waves, was measured by the pulse-echo technique using a Panametrics Intervalometer and glass density, rho, was obtained by the liquid ...

1977-09-01

37

Photoconducting properties of ultraviolet detectors based on GaN and Al{sub 1{minus}x}Ga{sub x}N films grown by ECR-MBE  

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1997-12-31

38

Photoconducting properties of ultraviolet detectors based on GaN and Al_1_-_xGa_xN films grown by ECR-MBE  

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1996-12-02

39

Passivity of 316L stainless steel in borate buffer solution studied by Mott-Schottky analysis, atomic absorption spectrometry and X-ray photoelectron spectroscopy  

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. ...

2010-11-15

40

Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces  

Science.gov (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 Hz)

2006-07-01

 
 
 
 
41

Limit of pitting corrosion at high-alloyed special steels and NiCrMo alloys in chloride solution; Die Lochkorrosionsbegrenzung bei hochlegierten Sonderedelstaehlen und NiCrMo-Legierungen in Chloridloesung - Einflussfaktoren und Ausmass  

Energy Technology Data Exchange (ETDEWEB)

The phenomenon of the limit of pitting corrosion in direction to positive potentials is studied by potentiokinetic polarization after a jump in the transpassive range and by potentiostatic tests at technical wrought materials and at model alloys of the systems NiCrMo and NiMo in CaCl{sub 2} solution in the concentration range 1 to 9 mol/l chloride at pH-values of 1 to 9 at temperatures of 30 to 110 C. Surface-analytical investigations gives in connection with knowledges from anodic polarization studies directions to the mechanism of the limit of pitting corrosion. Ranges of the limit of pitting corrosion are obtained at materials with a Mo content above 6.5% and contents of chloride of the media above 2 mol/l chloride. Increasing temperatures, increasing contents of chloride and sulfate shift the potential of the limit of pitting corrosion being always above 0.2 V (SCE) at potentiostatic determination to noble direction. There are indications ...

2001-08-01

42

Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

1992-08-28

43

Improved AlGaInP-based red (670--690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design  

Science.gov (United States)

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

1995-07-17

44

Growth of single-crystal metastable semiconducting (GaSb)_1/sub -//sub x/Ge/sub x/ films  

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from 10"1"6 to 10"1"9 cm"-"3 ...

6180-01-01

45

Fully transparent thin-film transistor devices based on SnO2 nanowires.  

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

2007-06-27

46

Feasibility study of a new zinc-air battery concept using flowing alkaline electrolyte  

Energy Technology Data Exchange (ETDEWEB)

Proof-of-principle experiments are reported for a new concept in electrically rechargeable zinc-air battery. The zinc electrode is a porous flow-thru type using a copper foam metal substrate with zinc deposition onto the foam metal from concentrated zincate electrolyte (as used in zinc-slurry type batteries). The bifunctional air electrode employs low-cost materials, being fabricated entirely from carbon-based precursors and small amounts of nickel and/or cobalt oxide. Corrosion measurements on the graphite materials in the air electrode indicate sufficient corrosion resistance for 8000 h life on charge. A prototype single cell was constructed having 1.5 Ah capacity producing 1.2 V discharge -2.0 charge at the three hour rate and has produced stable voltages for more than 150 cycles. Based on the 1.5 Ah prototype characteristics, design calculations for a 32 kWh battery project an energy density of about 110 Wh/kg, peak power density of 140 ...

1986-04-01

47

Electric characteristics of organic thin-film transistors and logic circuits with a ferroelectric gate insulator  

Energy Technology Data Exchange (ETDEWEB)

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

2007-07-16

48

Copper sulfates as cathode materials for Li batteries  

Energy Technology Data Exchange (ETDEWEB)

As lithium battery technology sets out to bridge the gap between portable electronics and the electrical automotive industry, cathode materials still stand as the bottleneck regarding performances. In the realm of highly attractive polyanion-type structures as high-voltage cathode materials, the sulfate group (SO{sub 4}){sup 2-} possesses an acknowledged superiority over other contenders in terms of open circuit voltage arising from the inductive effect of strong covalent S-O bonds. In parallel, novel lithium insertion mechanisms are providing alternatives to traditional intercalation, enabling reversible multi-electron processes securing high capacities. Combining both of these advantageous features, we report here the successful electrochemical reactivity of copper sulfate pentahydrate (CuSO{sub 4}.5H{sub 2}O) with respect to lithium insertion via a two-electron displacement reaction entailing the extrusion of metallic copper at a dual voltage of 3.2 ...

2011-02-01

49

Comparison of Si and InSb as the normal layer of S-N-S junctions  

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

1991-03-01

50

Biomimetic metal-sorbing vesicles for continuous extraction of heavy metal ions from dilute solution  

Energy Technology Data Exchange (ETDEWEB)

Biomimetic vesicle media which can selectivity extract and concentrate heavy metals (e.g., Pb{sup 2+}) from dilute solutions of 5 ppm and less have been prepared. At a concentration of only 1% 2/v, these non-covalently assembled, unilamellar, surfactant vesicles provide approximately 1,000m{sup 2} of exposed membrane surface area per liter of suspension which gives rise to very rapid rates of metal ion extraction. To facilitate the selective transport of heavy metal ions through the ion impermeable vesicle wall, the vesicles are doped with lipophilic ionophores, both natural and synthetic. In addition, the metal chelating agent, nitrolotriacetate, is encapsulated in the aqueous vesicle core to provide the driving force for metal ion uptake and concentration. Concentration factors in excess of 1000 fold have been observed. Metal-sorbing surfactant vesicles measuring approximately 100 nm in diameter are stable and have been tested in a ...

1993-12-31

51

Azimuth Quadrupole Systematics in Au-Au Collisions  

CERN Document Server

We have measured $p_t$-dependent two-particle number correlations on azimuth and pseudorapidity for eleven centralities of $\\sqrt{s_{NN}} = 62$ and 200~GeV Au-Au collisions at STAR. 2D fits to these angular correlations isolate the azimuth quadrupole amplitude, denoted $2 v_2^2 \\{ 2D \\} ( p_t )$, from localized same-side correlations. Event-plane $v_2 ( p_t )$ measurements within the STAR TPC acceptance can be expressed as a sum of the azimuth quadrupole and the quadrupole component of the same-side peak. $v_2 \\{ 2D \\} ( p_t )$ can be transformed to reveal quadrupole $p_t$ spectra which are approximately described by a fixed transverse boost and universal L\\'evy form nearly independent of centrality. A parametrization of $v_2 \\{ 2D \\} ( p_t )$ can be factored into centrality and $p_t$-dependent pieces with a simple $p_t$ dependence above 0.75 GeV/c. Results from STAR are compared to published data and model predictions.

2010-01-01

52

A novel photodiode made of hybrid organic/inorganic nanocomposite  

International Nuclear Information System (INIS)

Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be 5.2%. It is ...

2009-08-07

53

A study on the development of hypo-stoichiometric Zr-based hydrogen storage alloys with ultra-high capacity for anode material of Ni/MH secondary battery  

Energy Technology Data Exchange (ETDEWEB)

Some hypo-stoichiometric Zr-based Laves phase alloys were prepared and studied from a viewpoint of discharge capacity for electrochemical application. After careful alloy design of ZrMn{sub 2}-based hydrogen storage alloys through changing their stoichiometry while substituting or adding some alloying elements, the Zr(Mn{sub 0.2}V{sub 0.2}Ni{sub 0.6}){sub 1.8} alloy reveals relatively good properties with regard to hydrogen storage capacity, hydrogen equilibrium pressure and electrochemical discharge capacity. In order to improve the discharge capacity and rate-capability, Zr is partially replaced by Ti. The discharge capacity of Zr{sub 1-x}Ti{sub x}(Mn{sub 0.2}V{sub 0.2}Ni{sub 0.6}){sub 1.8} (x=0.0, 0.2, 0.3, 0.4, 0.6) alloy electrodes at 30 C reaches a maximum value and decreases as the Ti fraction increases. In view of electrochemical and thermodynamic characteristics, the occurrence of a maximal ...

2000-08-10

54

Study of the effect of noncondensable gas on heat transfer phenomena in horizontal steam generator of pactel facility with CATHARE2 V1.5a  

International Nuclear Information System (INIS)

Lappeenranta University of Technology (LTKK) and VTT Energy carried out a series of preliminary tests in 1999 to study the behavior of noncondensable (NC) gases in VVER geometry. The tests aimed at studying the effect of NC gases on system thermal-hydraulics and on heat transfer in a horizontal steam generator (HSG). The system behavior can be affected by hydrogen produced in the core in case of a severe accident, by nitrogen from hydro-accumulators released into the primary circuit in case of a loss-of-coolant accident (LOCA) and more generally by any NC gas in all cases where cooling is ensured by natural circulation. A secondary objective of the tests - the first series of tests ever performed with NC gas with PACTEL - was to find out, if the instrumentation of PACTEL was adequate for this type of tests and if it was functioning properly. This paper presents the measured and calculated (CATHARE code version V15a mod 2.1) results of the test NCg-l. It was carried out in natural ...

2001-03-20

55

Structural and optical investigations of sodium europium carbonate Na{sub 3}Eu(CO{sub 3}){sub 3}  

Energy Technology Data Exchange (ETDEWEB)

The crystal structure and the luminescence properties of a new carbonate, Na{sub 3}Eu(CO{sub 3}){sub 3}, are presented. Na{sub 3}Eu(CO{sub 3}){sub 3} is orthorhombic, acentric, Ama2, Z = 4; a = 9.942(2) {angstrom}, b = 11.024(3) {angstrom}, c = 7.147(2) {angstrom}; R = 0.019, R{sub w} = 0.051, 2374 unique reflections. The anionic subnetwork is built up from the stacking of {open_quotes}standing on edge{close_quotes} and {open_quotes}flat lying{close_quotes} carbonate layers into which Na{sup +} and Eu{sup 3+} ions are inserted. The symmetry of the EuO{sub 9} polyhedra is C{sub s}. The Eu{sup 3+} ions are inserted. The symmetry of the EuO{sub 9} polyhedra is C{sub s}. The Eu{sup 3+} luminescence technique confirms the presence of a unique low symmetry site for the rare earth atom. The electrostatic crystal field (cf) effects on the {sup 7}F multiplet are evaluated on the basis of the phenomenological cf theory. The simulation using C{sub 2v} ...

1997-08-01

56

Solution processable fluorenyl hexa-peri-hexabenzocoronenes in organic field-effect transistors and solar cells  

Energy Technology Data Exchange (ETDEWEB)

The organization of organic semiconductor molecules in the active layer of organic electronic devices has important consequences to overall device performance. This is due to the fact that molecular organization directly affects charge carrier mobility of the material. Organic field-effect transistor (OFET) performance is driven by high charge carrier mobility while bulk heterojunction (BHJ) solar cells require balanced hole and electron transport. By investigating the properties and device performance of three structural variations of the fluorenyl hexa-peri-hexabenzocoronene (FHBC) material, the importance of molecular organization to device performance was highlighted. It is clear from {sup 1}H NMR and 2D wide-angle X-ray scattering (2D WAXS) experiments that the sterically demanding 9,9-dioctylfluorene groups are preventing {pi}-{pi} intermolecular contact in the hexakis-substituted FHBC 4. For bis-substituted FHBC compounds 5 and 6, {pi}-{pi} intermolecular contact was observed in ...

2010-03-24

57

Simulation of dopant diffusion and activation during flash lamp annealing  

International Nuclear Information System (INIS)

A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak temperatures in a Mattson Millios"T"M fRTP"T"M system. The ...

2008-12-05

58

Plasma treatment of the Mg:Ag/tris-(8-hydroxyquinoline) aluminum interface in OLEDs: effects on adhesion and performance  

Energy Technology Data Exchange (ETDEWEB)

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq{sub 3} layer using either air or N{sub 2} prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current-voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N{sub 2} plasma treated Alq{sub 3} layer. For OLEDs subjected to short treatment times with an N{sub 2} plasma, only a very slight ...

2004-05-31

59

Paramagnetic susceptibility simulations from crystal field effects on Nd{sup 3+} in magnesium borate MgNd(BO{sub 2}){sub 5}  

Energy Technology Data Exchange (ETDEWEB)

From the crystal field analysis of optical absorption spectra on monoclinic S.G. P2{sub 1}/c MgNd(BO{sub 2}){sub 5}, where Nd{sup 3+} occupies a single crystallographic position with no symmetry elements, energy level schemes and an expression of the associated wavefunctions for the 4f{sup 3} configuration of Nd{sup 3+} have been derived, considering approximate C{sub 2v} and C{sub s} (C{sub 2}) symmetries. Despite of the low symmetry of Nd{sup 3+}, resulting rms deviations between calculated and experimental levels are very satisfactory. The composition of the crystal field wavefunctions from both sets of phenomenological free-ion and crystal field parameters has been checked through a calculation of the thermal evolution of the paramagnetic susceptibility {chi}, according to the Van Vleck formula. The same simulation was performed with crystal field parameters (CFPs) resulting from the ab initio simple overlap model (SOM), considering the ...

1999-01-01

60

Paper-based, printed zinc-air battery  

Energy Technology Data Exchange (ETDEWEB)

A flexible battery is printed on paper by screen-printing a zinc/carbon/polymer composite anode on one side of the sheet, polymerising a poly(3,4-ethylenedioxythiophene) (PEDOT) cathode on the other side of the sheet, and applying a lithium chloride electrolyte between the two electrodes. The PEDOT cathode is prepared by inkjet printing a pattern of iron(III)p-toluenesulfonate as a solution in butan-1-ol onto paper, followed by vapour phase polymerisation of the monomer. The electrolyte is prepared as a solution of lithium chloride and lithium hydroxide and also applied by inkjet printing on to paper, where it is absorbed into the sheet cross-section. Measurements on a zinc/carbon-PEDOT/air battery in a similar configuration on a polyethylene naphthalate substrate shows a discharge capacity of up to 1.4 mAh cm{sup -2} for an initial load of 2.5 mg zinc, equivalent to almost 70% of the zinc content of the anode, which generates 0.8 V at a discharge current of 500 {mu}A. By comparison, ...

2009-12-01

 
 
 
 
61

MnO powder as anode active materials for lithium ion batteries  

Energy Technology Data Exchange (ETDEWEB)

MnO powder materials are investigated as anode active materials for Li-ion batteries. Lithium is stored reversibly in MnO through conversion reaction and interfacial charging mechanism, according to the results of ex situ XRD, TEM and galvanostatic intermittent titration technique. A layer of the solid electrolyte interphase with a thickness of 20-60 nm is covered on MnO particles after full insertion. MnO powder materials show reversible capacity of 650 mAh g{sup -1} with average charging voltage of 1.2 V. It can deliver 400 mAh g{sup -1} at a rate of 400 mA g{sup -1}. The cyclic performance of MnO is improved significantly after decreasing particle size and coating with a layer of carbon. Among observed transition metal oxides, MnO shows relatively lower voltage hysteresis (<0.7 V) between the discharging and the charging curves at 0.05 C. In addition to its environmental benign feature and high density (5.43 g cm{sup -3}), MnO seems a ...

2010-05-15

62

Electrochemical and chemical dissolution behavior of Zn-Fe alloy coatings and its application to the analysis of Zn-Fe alloy layer. Zn-Fe kei mekki so no bunkyokuter dot yokai kyodo to teiryo bunseki eno oyo  

Energy Technology Data Exchange (ETDEWEB)

As surface treated steel sheets, steel sheets with Zn-Fe coatings as well as double-layer steel sheets with Fe-P alloy coatings on Zn-Fe alloy coatings are often used practically. Two treatment methods, which are used to dissolve only alloy layers without dissolving steel sheets in order to find amount and composition of alloy layersr have already been reported. This report investigates the mechanisms of these methods, particularly the mechanisms to control dissolution of steel sheets. In the alkali-dissolution method, Zn-Fe alloy coatings are dissolved in a strong alkaline solution(NaOH-triethanolamine (TEA)-H{sub 2}O{sub 2}). In this case, steel sheets are insoluble because passive films are formed on the surface. In the cathodic polarization electrolysis method, alloy layers are electrolyzed({minus}l.2V) and dissolved in an ammonium nitrate-0-phen electrolyte. At this potential, dissolution of steel sheets can be prevented by the 0-phen ...

1991-11-01

63

Effect of helium and hydrogen production on irradiation hardening of F82H steel irradiated by ion beams  

International Nuclear Information System (INIS)

Effects of helium and hydrogen production on irradiation hardening of martensitic steel F82H (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) were examined by dual or triple beam experiments. The effects of tempering and cold working were also examined. The irradiations were performed at about 500degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The value of appm-He/dpa for the dual ion beams was about 15, and the values of appm-He/dpa and appm-H/dpa for the triple ion beams were 15 and 15 (or 150), respectively. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. Irradiation softening and hardening was observed in F82H-std, F82H+20%CW and a non-tempered F82H steels irradiated at about 500degC to 18 and 50 dpa, respectively, by dual ion beams. The hardness of the specimens irradiated at about 500degC to 18 dpa under ...

2007-06-01

64

Effect of helium and hydrogen production on hardness of F82H steel irradiated by dual/triple ion beams  

International Nuclear Information System (INIS)

Effect of helium and hydrogen production on radiation-hardening of F82H irradiated by dual or triple beam condition were investigated. The specimens used were four types of ferritic martensitic steels of F82H-std (Fe-8Cr-2W-0.2V-0.04Ta-0.1C) steels tempered at 750degC for 60 minutes, 20% cold worked F82H steel, F82H tempered for 10 minutes and non-tempered F82H steels. The irradiation was performed at 450degC to 50 dpa under simultaneous dual beams of 10.5 MeV Fe"3"+ and 1.05 MeV He"+ or triple beams of those and 380 keV H"+ ions. The ratios of He (appm)/dpa and H(appm)/dpa were 15 nad 15 (or 150) for dual and triple ion beams. The hardness of the irradiated specimens measured at room temperature using a micro indentation after the irradiations. The hardness in these F82H steels irradiated at 450degC to 18 dpa under triple beam irradiation was harder than that under dual beam irradiation. Irradiation softening and hardening under dual beams was ...

2003-03-01

65

Determination of trace amounts of cadmium, cobalt, chromium, iron, molybdenum, nickel, selenium, titanium, vanadium and zinc in blood and milk by neutron activation analysis  

International Nuclear Information System (INIS)

The concentrations of Cd, Co, Cr, Fe, Mo, Ni, Se, Ti, V and Zn in biological fluids, human blood serum and market milk were determined by neutron activation analysis, with enrichment by coprecipitation. The pre-concentration of these trace elements was accomplished by converting the dissolved trace metal ions into their pyrrolidinedithiocarbamate (1-pyrrolidinecarbodithioate) chelates, followed by coprecipitation with a metal carrier such as Ni, Pb or Bi. The coprecipitation was carried out prior to irradiation for the short-lived nuclides (V, Ti and Se) and after irradiation for the other elements. The validity of the method was checked using certified biological reference materials; the concentrations of trace elements found by the proposed method agreed well with the published certified data. The limits of detection for Cd, Co, Cr, Fe, Mo, Ni, Se (obtained through the long-lived isotope "7"5Se) and Zn under the present experimental conditions were found to be 5, 5, 10, 520, 5, 70, ...

66

Crystal field influence on the {sup 8}S{sub 7/2} ground state splitting of Bk{sup 4+} in CeF{sub 4}.  

Energy Technology Data Exchange (ETDEWEB)

The one-particle models of crystal-field theory provide a qualitative interpretation for the observed ground state splitting of four Kramers doublets of the {sup 8}S{sub 7/2} of Bk{sup 4+} doped into CeF{sub 4}. A set of nine nonzero (B{sup k}{sub q}) parameters corresponding a C{sub 2v} point symmetry provide a very good correlation between the experimental data and simulated energy level schemes within a rms deviation of 13.7 cm{sup -1}. The calculated and experimental energy values have the same order-of-magnitude for the ground state and excited components. The total ground state splitting of the S-state ions of f-elements such as Bk{sup 4+} in CeF{sub 4} is larger when compared with Cm{sup 3+} :LaCl{sub 3} and Gd{sup 3+} :La(C{sub 2}H{sub 5}SO{sub 4}){sub 3}-9H{sub 2}O ions. The so-called crystal-field strength parameter, N{sub v}, increases as a function of the increasing maximum splitting of the ground state due to a decrease in the ...

2000-03-01

67

Characterization of VPO ammoxidation catalysts by in situ methods  

Energy Technology Data Exchange (ETDEWEB)

In-situ methods are well known as powerful tools in studying catalyst formation processes, their solid state properties under working conditions and the interaction with the feed, intermediates and products to reveal reaction mechanisms. This paper gives a short overview on results of intense studies using in-situ techniques to reveal VPO catalyst generation processes, interaction of educts, intermediates and products with VPO catalyst surfaces and mechanistic insights. Catalytic data of the ammoxidation of toluene on different VPOs complete these findings. The precursor-catalyst transformation processes were preferently investigated by in-situ XRD, in-situ Raman and in-situ ESR spectroscopy. The interaction of aromatic molecules and intermediates, resp., and VPO solid surfaces was followed by in-situ ESR and in-situ FTIR spectroscopy. Mechanistic information was mainly obtained using in-situ FTIR spectroscopy and the temporal-analysis-of-products (TAP) technique. Catalytic studies ...

1998-12-31

68

5.6-nm p"+/n junction formation for sub-0.05-#mu#m PMOSFETs by using low-energy B_1_0H_1_4 ion implantation  

International Nuclear Information System (INIS)

Decaborane (B_1_0H_1_4) cluster ions were implanted into n-Si(100) substrates to fabricate shallow p"+/n junctions. Implant energies of 2 keV, 5 keV, and 20 keV, equivalent to implant energies of the monomer boron ion of 174 eV, 435 eV, and 1.74 keV, respectively, were used at dosages of 1 X 10"1"2 /cm"2 and 1 X 10"1"3 /cm"2. The implanted samples were then subjected to activation annealing at 800 .deg. C, 900 .deg. C, and 1000 .deg. C for 10 s. By using secondary ion mass spectrometry (SIMS) depth profiles, we determined that the depth of the shallow junction (D_s) at a dosage of 1 X 10"1"3 /cm"2 was in the range 12 nm - 45 nm after annealing at 1000 .deg. C. D_s and transient enhanced diffusion (TED) were greatly reduced at implant energies lower than 5 keV, but thermal diffusion (TD) smoothly decreased. In particular, TED was suppressed in the p"+/n junction implanted at 2 keV and a dosage of 1 X 10"1"3 /cm"2, and the formation of only a 5.6-nm ultra-shallow junction was identified. ...

2004-06-01

69

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy  

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt ...

2010-02-01

70

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy  

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 ...

2005-06-01