Energy Technology Data Exchange (ETDEWEB)

The N{sub 1s} XPS band of pyridine chemisorbed on Al-ZSM-5 zeolite was found to be properly deconvoluted into three component peaks. In a previous contribution these three components were assigned to pyridine chemisorbed on two kinds of Bronsted acid sites and one Lewis acid site. This analysis is extended here to Fe-ZSM-5 and B-ZSM-5. Isomorphous substitution of Fe for Si or Al in the zeolite framework leads to a slight decrease in the binding energy of the N{sub 1s} Lewis component. In the case of B substitution a decrease in the binding energy of all three N{sub 1s} components is observed.

Energy Technology Data Exchange (ETDEWEB)

Some N-containing or S-containing organic substances and some acetylenic alcohols were tested as inhibitors of the corrosive attack suffered by Fe-based metallic glasses in deaerated 0.1 N sulfuric acid (H{sub 2}SO{sub 4}) solution at 25 C. It was verified that the specific action these compounds exerted on the corrosion process of the amorphous alloys was similar to the one these compounds exerted on polycrystalline iron. The most efficient substances were those containing a sulfur atom with available lone pairs, which chiefly inhibited the anodic reaction of both metal specimens. Owing to the chemical and physical homogeneity of the amorphous alloy, the chemisorbed inhibitor film that formed on the glassy surface was more stable and protective than that formed on the polycrystalline iron.

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

International Nuclear Information System (INIS)

We studied the influence of alloying on the structural and electronic properties of the unrelaxed and relaxed Si_1_-_yC_y random alloys by means of ab initio theoretical calculations using two methods: (i) a supercell approach in connection with the plane-wave pseudopotential method; (ii) the full-potential augmented plane-wave plus local orbitals (APW+lo) method. The first method is used to obtain the relaxed atomic structure. The relaxed atomic positions obtained by pseudopotential calculations were used to calculate the band structure via the second method. The local density approximation was used for the exchange and correlation energy density functional. We investigated the lattice parameters and band gap energies. We found that a quite smaller gap appears in the neighborhood of y=0.03125 concentration of C atoms. The band gap shows a large anomalous bowing and is strongly composition dependent. The electron densities of states for the ...

Energy Technology Data Exchange (ETDEWEB)

The catalytic nature of Mo(CO)/sub 6/ supported on ..gamma..-Al/sub 2/O/sub 3/, KOH-doped ..gamma..-Al/sub 2/O/sub 3/, and HY-zeolite was investigated in CO oxidation with N/sub 2/O in comparison with that of a conventional partially reduced MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst. Kinetic parameters of this reaction were obtained in the range 0 to 100/sup 0/C; the rate law r = kP/sub N/sub 2/O//sup 1/P/sub CO//sup 0/ was found on all catalysts, and the activation energy was estimated to be 9.1 kcal/mol on the Mo(CO)/sub 6/-derived catalysts and 7.1 kcal/mol on the partially reduced MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst. Maximum catalytic activities were obtained by activating the Mo(CO)/sub 6/-derived catalysts at 400/sup 0/C. To obtain similar activity on the MoO/sub 3//..gamma..-Al/sub 2/O/sub 3/ catalyst, it was necessary to reduce at 600/sup 0/C. The former catalysts were deactivated on repeating the reaction. On the basis of these results and those of ESR ...

International Nuclear Information System (INIS)

Interaction of Yb-Pd-Si system components is studied, isothermal cross section of this system state diagram at 870 K is constructed. Five new ternary silicides are detected in the system: YbPd_5Si_3, Yb_3Pd_2_0Si_6, YbPd_2Si, YbPd_0_,_6_7Si_1_,_3_3, YbPdSi; the existence of one more -YbPd_2Si_2, earlier known, is confirmed. Crystal structure for all the compounds detected is determined and examined. Data on the materials magnetic properties are obtained. It is assumed that YbPd_2Si, YbPd_2Si_2 and YbPdSi compounds appear to be the Condo-systems. 10 refs., 3 figs., 3 tabs.

International Nuclear Information System (INIS)

The solubility limit of #alpha#'-SiAlON solid solutions on the Si_3N_4-YN:3AlN composition join in the system Si_3N_4-YN-AlN has been determined at 1800 degrees C. The end members of these solid solutions are Y_0_._4_3Si_1_0_._7Al_1_._3N_1_6 and Y_0_._8Si_9_._6Al_2_._4N_1_6. Unit-cell dimensions of the #alpha#'-SiAlON solid solutions in the system Si,Al,Y/N,O can be expressed as follows: a_0 (Angstrom) = 7.752 + 0.045m + 0.009n, c_0 (Angstrom) = 5.620 + 0.048m + 0.009n, where the #alpha#'-SiAlON solid solution has the formula Y_xSi_1_2_-_(_m _+ _n_)Al_m_+_nN_1_6_-_nO_n. The single-phase boundary of the solid solution #alpha#'-SiAlON on the composition triangle Si_3N_4-YN:3AlN-Al;N:Al_2O_3 is delineated. The present paper also reports the phase relationships involving #alpha#'-SiAlON.

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a ...

Energy Technology Data Exchange (ETDEWEB)

Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (1 0 0) substrates, were bombarded at room temperature with 100 keV Ar{sup 1+} or Ar{sup 8+} or with 250 keV Xe{sup 1+} or Xe{sup 19+} ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV {alpha}-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV {sup 127}I{sup 10+} beam and atomic force microscopy. No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate.

International Nuclear Information System (INIS)

The atomic structures of calcium sialons Ca_xSi_1_2_-_mAl_mN_1_6 (m = 0.5, 1, 2, 4) with the #alpha#- or #beta#-Si_3N_4-type structure were calculated, using the ab initio DFT approach, including relaxations of both lattice parameters and positions of the atoms. For all m values the #alpha#-Si_3N_4-type structure has a lower energy than the #beta#-type. For m = 1, 2 and 4 the #alpha#-type structure is also stable against decomposition into the metal nitrides, in agreement with experimental data. For m = 0.5 stability becomes uncertain. Al ions prefer positions close to Ca. Rather strong structural relaxations occur around the Ca ion.

International Nuclear Information System (INIS)

Eu-#alpha#-SiAlON (Eu_m_/_2Si_1_2_-_m_-_nAl_m_+_nO_nN_1_6_-_n) was synthesized with nominal compositions having small m and n values, by firing the powder mixture of Eu_2Si_5N_8, #alpha#-Si_3N_4, AlN, and Al_2O_3 at 1900 "oC for 6 h under 1 MPa nitrogen atmosphere. The ratio of the oxidation state of Eu"2"+/Eu"3"+ was estimated from the X-ray absorption fine structure (XAFS) measurement. The observed X-ray absorption near edge spectrum (XANES) showed that the Eu ion in Eu-#alpha#-SiAlON was mainly in divalent state but also coexisted with a small amount of Eu in the trivalent state. The crystal structure of Eu-#alpha#-SiAlON was refined by the Rietveld analysis of the X-ray powder diffraction patterns. The lattice constants of the samples increased with increasing m and n values. The excitation band of Eu-#alpha#-SiAlON ranged from the ultraviolet to the visible light region and a broad emission band centered at about 590 nm were observed. The ...

International Nuclear Information System (INIS)

Scanning ion microscopy with polarization analysis (SIMPA) is used to study the spin-resolved surface magnetic structure of nano-sized magnetic systems. SIMPA is utilized for in situ topographic and spin-resolved magnetic domain imaging as well as for focused ion beam (FIB) etching of desired structures in magnetic or non-magnetic systems. Ultra-thin Co films are deposited on surfaces of Si(1 0 0) substrates, and ultra-thin, tri-layered, bct Fe(1 0 0)/Mn/bct Fe(1 0 0) wedged magnetic structures are deposited on fcc Pd(1 0 0) substrates. SIMPA experiments clearly show that ion-induced electrons emitted from magnetic surfaces exhibit non-zero electron spin polarization (ESP), whereas electrons emitted from non-magnetic surfaces such as Si and Pd exhibit zero ESP, which can be used to calibrate sputtering rates in situ. We report on new, spin-resolved magnetic microstructures, such as magnetic 'C' states and magnetic vortices, found at surfaces of ...

International Nuclear Information System (INIS)

Dense sialon ceramics along the tie line between Si_3N_4 and Nd_2O_3#centre dot#9AlN were prepared by hot-pressing at 1,800 C. The materials were subsequently heat-treated in the temperature range 1,300--1,750 C and cooled either by turning off the furnace (yielding a cooling rate (T_c_o_o_l) of #approx# 50 C/min) or quenching (T_c_o_o_l #>=# 400 C/min). It was found necessary to use the quenching technique to reveal the true phase relationships at high temperature, and it was established that single-phase #alpha#-sialon forms for 0.30 #<=# x #<=# 0.51 in the formula Nd_xSi_1_2_-_4_._5_xAl_4_._5_xO_1_._5_xN_1_6_-_1_._5_x. The #alpha#-sialon is stable only at temperatures above 1,650 C, and it transforms at lower temperatures by two slightly different diffusion-controlled processes. Firstly, an #alpha#-sialon phase with lower Nd content is formed together with an Al-containing Nd-melilite phase, and upon prolonged heat treatment ...