1-v 90-nm cmos: Topics by WorldWideScience.org

CMOS/SOI hardening at 100 MRAD (SiO_2)

... in artificial intelligence, human physiology and biomedical prosthesis. ... central and peripheral nerve systems [1 ... CMOS circuit interface for multiplexed ...

2001-10-25

Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.

1990-07-16

FEOL technology trend

A 12b 1kS/s 65uA 0.35um CMOS Algorithmic ADC for Sensor Interface in Ubiquitous Environments

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are ...

KoreaScience (Korea)

Full Text Available

2008-03-01

Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

SEE Characterization of the Samsung K4F660812 DRAM ... - NEPP - NASA

Neutron-induced soft error rates (SER`s) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SE`s). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, the SER data corresponds to those induced by cosmic ray neutrons. The {alpha}-particle induced SER`s were also measured for comparison with the neutron-induced SER`s. Neutron-induced SE`s occurred in both circuits. On the other hand, {alpha}-induced SE`s occurred in SRAM, but not in the Latch circuit. The measured SER`s agreed with simulated results. The authors discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.

1998-07-01

Hardening at the design level

the Samsung K4F660812 DRAM were measured by the JPL Radiation Effects. Group [1] . ... The Samsung K4F660812 is a 8 x 223 bit Fast Page CMOS DRAM. The two- ...

Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.

1992-08-01

Radiation hardening of CMOS-based circuitry in SMART transmitters

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

2011-07-01

Radiation effects on MOS devices and radiation-hard CMOS technologies

Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a radiation-tolerant transmitter could be constructed. A prototype for an analog-to-digital ...

Single chip linear array picture processor

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for 2k-gate test chips indicate that radiation ...

Radiation hardening of a high voltage IC technology (BCDMOS)

A CMOS programmable picture processor with its own photodiode array is presented. The circuit is novel in that it includes an instruction set that permits most low-level picture processing operations. The chip is a parallel machine with a processing unit for each picture element. Images are binarized and are processed line by line. An experimental chip has been designed and is under fabrication. 2 references.

1983-01-01

Hardening process relating to the irradiation of active electronic components and large hardened components

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

1990-07-16

Optimization of advanced PMOS junctions using Ge, B and F co-implants

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

1988-12-09

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized junction on Ge"+ ...

2005-08-01

A novel CMOS charge-pump circuit with current mode control 110 mA at 2.7 V for telecommunication systems

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

2011-05-17

The application of advanced techniques for complex focused-ion-beam device modification

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-#mu#m CMOS ...

2010-04-01

Single event effects in the pixel readout chip for BTeV

Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification on VSLI devices fabricated with CMOS process technology is reviewed. (UK).

1996-12-31

Low cost, low power, high sensitivity, real time neutron detection microsystem

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 {micro}m CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

2001-12-07

1 2 3 4

The Light Infantry Division: How Many Are Needed

A Si array neutron detector is proposed based on commercial CCD and CMOS sensor technology coupled with a thin film neutron conversion coating. System sensitivity is estimated for a baseline device containing a single array and various schemes to increase detection probability by simple area scaling and stacking are discussed. Some possible use scenarios are discussed involving static and moving sources. Likely neutron source fluxes for weapons grade and commercial grade nuclear material are estimated along with expected intensities of cosmic background neutrons which would establish a noise floor to detection limits.

2002-10-10

Highly Ordered Spatial Organization of the Structural Long Noncoding NEAT1 RNAs within Paraspeckle Nuclear Bodies

Page 1. .v~ -. *° THE LIGHT INFANTRY DIVISION-HOW MANY ARE NEEDED? ,"- Lfl ... 7- Light Infantry Light Infantry Division 20. ...

1985-05-10

UK PubMed Central (United Kingdom)

Paraspeckles (PSPs) are nuclear bodies associated with the retention in the nucleus of specific mRNAs. Two isoforms of a long noncoding RNA (NEAT1_v1/Menε and NEAT1_v2/Menβ)...Full Text Available

2010-11-15

Radiation hardening of smart electronics

Radiation hardening of integrated circuits technologies

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs.

IC chip stress during plastic package molding

The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system hardening.

Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems

Approximately 95% of the world`s integrated chips are packaged using a hot, high pressure transfer molding process. The stress created by the flow of silica powder loaded epoxy can displace the fine bonding wires and can even distort the metalization patterns under the protective chip passivation layer. In this study the authors developed a technique to measure the mechanical stress over the surface of an integrated circuit during the molding process. A CMOS test chip with 25 diffused resistor stress sensors was applied to a commercial lead frame. Both compression and shear stresses were measured at all 25 locations on the surface of the chip every 50 milliseconds during molding. These measurements have a fine time and stress resolution which should allow comparison with computer simulation of the molding process, thus allowing optimization of both the manufacturing process and mold geometry.

1998-02-01

Nitrate Reductase Activity in Soybeans (Glycine max [L.] Merr.)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

2006-03-06

UK PubMed Central (United Kingdom)

The optimum in vivo nitrate reductase (NR) assay medium for soybean (Glycine max [L.] Merr.) leaves was 50 mm KNO₃, 1% (v/v) 1- propanol, and 100...Full Text Available

1976-12-01

48 CFR 208.002 - Priorities for use of Government supply sources.

Tests on decisive proof for the incinerating and melting facility using the in-can type high frequency induction heating

...false Priorities for use of Government supply sources. 208.002 Section 208...ACQUISITION PLANNING REQUIRED SOURCES OF SUPPLIES AND SERVICES 208.002 Priorities for use of Government supply sources. (a)(1)(v)...

2010-10-01

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

LEDF(Large Equipment Dismantling Facility) is the solid waste processing technology development facility that carries out high-volume reduction and low dosage processing. The high-volume reduction processing of the high dose {alpha}-waste configured with combustible waste, pvc and rubber, spent ion exchange resin, and noncombustible waste have been planned the incinerating and melting facility using the in-can type high frequency induction heating in LEDF. This test is intended to clarify the design data. It was confirmed that the incinerating and melting performance, molten solid properties and exhaust gas processing performance with pilot testing equipment and bench scale equipment. The result of this test are as follows. 1. Processing speed is 6.7 kg/h for the combustible waste, 13.0 kg/h for the ion exchange resin, and 30.0 kg/h for the noncombustible waste. For above optimum processing conditions are as follows. Operating temperature is 1000degC for the combustible waste, 1300degC ...

1999-12-01

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended defects, particularly 3 1 1's and dislocation loops. In addition to the extended defects, already modeled in the atomistic kinetic Monte-Carlo simulator DADOS, we have developed a physically based modeling approach for the implant-induced damage build-up, amorphization and recrystallization, suitable to handle device-size process simulation. It is based on amorphous pockets (3D, irregular shape agglomerates of an arbitrary number of interstitials and vacancies, plus trapped impurities) with a size-dependent activation energy for recombination. The model is able to reproduce experimental aspects like the crystal-amorphous transition temperature and the super ...

2004-12-15

Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys

2004-12-15

MOS flat-band capacitance method at low temperatures

In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of ...

2010-07-01

Investigation on boron transient enhanced diffusion induced by the advanced P{sup +}/N ultra-shallow junction fabrication processes

The expression C/sub FB/ = C/sub ox/ x ({element of}/sub si//L/sub D/)/(C/sub ox/ + ({Epsilon}/sub si//L/sub D/)) (where L/sub D/ is the Debye length), commonly used for the flat-band capacitance of the MOS structure, is invalid in the temperature range below 100 {Kappa}. Consequently, significant error may be encountered when the flat-band capacitance method is used to extract the flat-band voltage V/sub FB/, which is of considerable interest for both the modeling and characterization of MOS devices. To extend this method to low-temperature CMOS applications one has to use a more general model that can be obtained by applying Fermi-Dirac statistics and taking into account the impurity freezeout effect. The authors show that when the temperature dependence of V/sub FB/ is extracted using this approach, the experimental data for n/sup +/ polysilicon gate MOS capacitors are in a good agreement with a simple model.

1989-08-01

Investigation on boron transient enhanced diffusion induced by the advanced P"+/N ultra-shallow junction fabrication processes

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

2005-08-01

A widely tunable continuous-time LPF for a direct conversion DBS tuner

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...

2005-08-01

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35 mum SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f{sub 0} can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +-5% bandwidth accuracy, 30 nV/Hz{sup 1/2} input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f{sub 0} = 20 MHz) from 5 V supply, and occupy 0.5 mm{sup 2}.

2009-02-15

A comparative study on ultra-shallow junction formation using co-implantation with fluorine or carbon in pre-amorphized silicon

Ion implantation and subsequent annealing are essential stages in today's advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the '+n', in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I-V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I-V excess, the full I and V ...

2004-12-15

A Novel VLSI Architecture of Fixed-complexity Sphere Decoder

The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

2005-12-05

CERN Document Server

Fixed-complexity Sphere Decoder (FSD) is a recently proposed technique for Multiple-Input Multiple-Output (MIMO) detection. It has several outstanding features such as constant throughput and large potential parallelism, which makes it suitable for efficient VLSI implementation. However, to our best knowledge, no VLSI implementation of FSD has been reported in the literature, although some FPGA prototypes of FSD with pipeline architecture have been developed. These solutions achieve very high throughput but at very high cost of hardware resources, making them impractical in real applications. In this paper, we present a novel four-nodes-per-cycle parallel architecture of FSD, with a breadth-first processing that allows for short critical path. The implementation achieves a throughput of 213.3 Mbps at 400 MHz clock frequency, at a cost of 0.18 mm2 Silicon area on 0.13{\\mu}m CMOS technology. The proposed solution is much more economical compared with the existing ...

2010-01-01

1 2 3 4

(#alpha#, t) reactions on "4"5Sc, "5"1V and "5"9Co nuclei at 27.2 MeV #alpha#-particle energy

Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1#mu#m CMOS devices

Differential cross sections of the (#alpha#, t) reactions on "4"5Sc, "5"1V, and "5"9Co nuclei are measured in the 10-71 deg, 10-155 deg, and 10-171 deg angular ranges, respectively, with 27.2 MeV alpha particles. The cross sections have also been calculated on the basis of the distorted wave theory. The possibility of an unambiguous choice of the optical potential for alpha particles is discussed. The angular distribution calculations using several combinations of the optical potentials in the inlet and outlet channels of the reactions show that consistence between the calculations and the measurements is achieved (especially in angular range, less than 90 deg, if one of the potentials is chosen to be a sufficiently deep one.

Sandia LSI accelerated aging and data acquisition techniques

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses from 3E14 to 5E15at/cm"2 using PULSION"(R) ...

2005-08-01

Large Scale Laser Two-Photon Polymerization Structuring for Fabrication of Artificial Polymeric Scaffolds for Regenerative Medicine

The purpose of the Microelectronic Evaluation Laboratory at Sandia is to develop a program for evaluating CMOS LSI (complementary metal oxide silicon - large scale integrated) technology devices which are being used for the first time in a weapon system. These evaluations are based on accelerated aging studies and electrical tests to determine the reliability and life of the devices. In accelerated aging, specific, controlled stresses are applied to the device to accelerate time-to-failure. Data are used tin mathematical models to estimate life in acutal use. The stresses used for this technology are temperature and voltage. The devices are stored at temperatures with or without voltage applied (steady-state or cyclical) and periodically tested until at least 50% failures are encountered. Since most current technologies use epoxy-die-attachment, aging temperatures must be under 200/sup 0/C. This delays device failure, and a 16% failure level is used when this ...

1980-04-01

Spin-lattice relaxation in A-15 type intermetallic compounds

We present a femtosecond Laser Two-Photon Polymerization (LTPP) system of large scale three-dimensional structuring for applications in tissue engineering. The direct laser writing system enables fabrication of artificial polymeric scaffolds over a large area (up to cm in lateral size) with sub-micrometer resolution which could find practical applications in biomedicine and surgery. Yb:KGW femtosecond laser oscillator (Pharos, Light Conversion. Co. Ltd.) is used as an irradiation source (75 fs, 515 nm (frequency doubled), 80 MHz). The sample is mounted on wide range linear motor driven stages having 10 nm sample positioning resolution (XY--ALS130-100, Z--ALS130-50, Aerotech, Inc.). These stages guarantee an overall travelling range of 100 mm into X and Y directions and 50 mm in Z direction and support the linear scanning speed up to 300 mm/s. By moving the sample three-dimensionally the position of laser focus in the photopolymer is changed and one is able to write complex 3D ...

2010-11-10

Relationship between QRS transition zone and the interventricular septum; Using CT scan

The temperature dependence of T_1 spin-lattice relaxation time on "5"1V, "6"9Ga, "7"1Ga and Knight shift on "5"1V and "2"9Si nuclei in polycrystalline V_3Si, V_3Ga, V_3Ge and in the monocrystal V_3Si in normal state is investigated. For V_3Si and V_3Ga a rapid growth (T_1T)"-"1 is observed with temperature decrease while for V_3Ge the maximum (T_1T)"-"1 at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T_1 anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T_1T)"-"1 and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V_3Si from T_1 measurements.

Improvement of banana through biotechnology and mutation breeding

The relationship between the QRS transition zone of the standard 12-lead ECG and interventricular septum was studied. The position and the angle to the horizontal line of the interventricular septum were evaluated with computed tomography (CT) and compared to the QRS transition zone. The subjects were 36 patients with no cardiovascular diseases. The patients were divided into 3 groups according to the position of QRS transition zone: V{sub 1}-V{sub 2} (8 cases), V{sub 3}-V{sub 4} (21 cases), and V{sub 5}-V{sub 6} (7 cases). The interventricular septum on CT was directed to the anterior chest wall between V{sub 3} and V{sub 4} in all 3 groups. The mean value of the interventricular septal angle did not differ from group to group, 52.1deg for V{sub 1}-V{sub 2} group, 49.8deg for V{sub 3}-V{sub 4} group, and 48.2deg for V{sub 5}-V{sub 6}. It was concluded that the direction of the interventricular septum ...

1991-11-01

Detections of SiO and H$_2$O Masers in the Bipolar Nebula IRAS 19312+1950

Protocols were standardized for in vitro propagation of several elite and diverse banana accessions using shoot tip explants. Tissue culture raised plants were field planted at multiple locations. Studies were undertaken for the induction of mutations using multiple shoot cultures of six selected cultivars, Shreemanti (AAA), Basrai (AAA), Lal Kela (AAA), Rasthali (AAB), Karibale Monthan (ABB) and a wild diploid (BB). These shoot cultures were irradiated at different doses of gamma rays (0-100 Gy) and subcultured thrice (up to M_1V_3) to separate shimeras, followed by induction of rooting (M_1V_4). In general, the rate of multiplication had a negative association with the dose of gamma rays. Enhanced multiplication of shoots was noticed at lower doses. The proliferation of shoots was arrested beyond 50 Gy and a dose of 70 Gy was completely lethal for all the genotypes studied. The rooted plantlets were ...

1998-10-01

CERN Document Server

We report on the detection of SiO and water masers toward a newly found bipolar nebula, IRAS 19312+1950. This object exhibits extreme red IRAS color log (F25/F12)=0.5 and log (F60/F25)=0.7 and a nebulosity having a size of about 30" extended to the South-West in the 2MASS near-infrared image. Toward this object, we have detected emission from the H2O 6(1,6)-5(2,3) transition, the SiO J=1-0, v=1 and 2, and J=2-1, v=1 transitions, and the SO 2(2)--1(1) and H13CN J=1-0 transitions. The thermal lines of SO and H13CN are shifted by about 12 km/s in radial velocity with respect to the maser lines, indicating that thermal emission comes from the background molecular cloud. However, the SiO J=2-1, v=2 spectrum shows another component of SiO emission separated by 26 km/s from the main component, that might be formed in a rotating or expanding shell.

2000-01-01

Interpretation of neutron activation cross-sections with pre-equilibrium consideration

Structure of Mesita del Buey at TA-54, Los Alamos National Laboratory, New Mexico

The aim of the present is to consider the influence of pr equilibrium processes on the activation cross-sections of "2"7 Al(n,p) "2"7 Mg, "5"1 V(n,p) "5"1"m Ti, "8"8 Sr(n,p) "8"8"m Rb, "9"4 Zr(n,p) "9"4"m Y and "9"7"Mo(n,p) "9"7"m Nb in the neutron energy range 13 to 15 MeV. Comparison with recent measurements is given for all considered isotopes. 2 figs., 1 tab.

Characterization of the surface film growth during the electrochemical process: Part 2 (90 % copper-10 % nickel system)

The geological structure of Mesita del Buey at Technical Area 54 (TA-54) was examined using precise surveying of the contact between units 1v and 2 of the Tshirege Member of the Bandelier Tuff at 3.5 km along the north wall of Pajarito Canyon and 0.6 km along the north wall of a tributary to Canada del Buey. Estimated structure contours on this contact indicate typical strikes of N40E to N70E along this part of Mesita del Buey, although the apparent strike of the tuff is E-W at the western part of the survey. Typical dips are 1.0{degree} to 2.0{degree} to the east or southeast, with an estimated maximum dip of 3.2{degree} near the west end of Material Disposal Area G. Thirty seven faults with vertical displacements of 5 to 65 cm were observed in outcrop along the Pajarito Canyon traverse, and, due to the incomplete exposure of the unit 1v-unit 2 contact, many more faults of this magnitude undoubtedly ...

1998-04-23

Some aspects of concentrated sulphuric acid storage tank corrosion

In order to understand the resistance of passive films formed during corrosion processes, an analytical technique using x-ray diffraction was developed to examine the structure of metal in closest proximity to the metal/liquid interface. The in-situ structure at the metal liquid interface was examined for 90 % copper and 10 % nickel (90-10 Cu-Ni) in KOH solution at room temperature and at four different potentistatically controlled potentials ({minus}0.5 V, {minus}0.1 V, +0.5 V and +0.10 V versus Ni/NiO). The chemical changes at the metal interface were studied over a period of 48 hours. It was found that the integrity of the 90-10 Cu-Ni foil in KOH was lost after a continued application of the potential over 48 hours. The x-ray diffraction results indicated that the structure of both the inner and the outer passive layers, at {minus}0.5V and {minus}0.1 V (versus Ni/NiO), is comprised of Ni(OH){sub 2}, ...

1998-06-01

Role of additives on tensile strength of wood-plastic composite

Carbon steel is frequently used to construct concentrated sulphuric acid storage tanks. This paper discussed the corrosion performance of carbon steel tanks and outlined the underlying mechanisms responsible for major corrosion modes. Analyses of hydrogen grooving and dilute acid corrosion failure mechanisms were presented. Recent corrosion-induced leak failures were also discussed. The use of anodic protection and organic coatings as a corrosion control measure was also evaluated. The results of laboratory studies that were conducted to understand corrosion-induced failures showed that carbon steel electrodes exhibited transpassive corrosion at relatively high anodic potentials, while stainless steel electrodes exhibited transpassive corrosion at anodic potentials less than 1 V. It was concluded that corrosion-induced leaks can be prevented by using anodic protection and baked phenolic coating technologies. 23 refs., 9 figs.

2009-07-01

On character of organic additives effect on pitting corrosion rate of steel-Kh25T at various potentials

Wood-plastic composite (WPC) formation has been studied with simul + styrene system at various compositions of styrene with methanol as the swelling solvent. Effect of additives, e.g. multifunctional monomers (MFM)and oligomers used in very low quantity (1% v/v) on the polymer loading (PL) and tensile strength (TS) of the WPC has been elaborately investigated. Enhanced PL and TS values are observed. Inorganic co-additives like Lithium (Li"+), Copper (Cu"2"+) and acid (H"+) and urea (U) used in combinations with additives (MFM or oligomers) have influenced the results of PL and TS in these systems. Li"+ ion has been a good replacement for H"+ ion; U has substantially enhanced the PL values with retention of the TS values of WPC. Co-additive Cu"2"+ used in these systems can act as a preservative and protective agent for WPC. (Author).

1992-01-01

New neutron-rich isotopes in the scandium-to-nickel region, produced by fragmentation of a 500 MeV/u "8"6Kr beam

The dependence of the inhibiting action of some surface active organic substances (SAOS) on the pitting- formation potential epsilonsub(p) has been investigated for the steel Kh25T. The study has been performed by potentiostatic method using the H_2SO_4 0.1-n-solution doped by NaCl, Na_2SO_4, in the presence of SAOS of different classes. As epsilonsub(p) shifts in positive direction from +0.6 to +1.1 V, the inhibiting action of the SAOS series (o-oxyquinoline) increases gradually till some critical potential above which SAOS favour pitting destruction of steel. This phenomenon should be considered in anodic protection in SAOS-doped solutions.

Electronic and spectral properties of adatoms on metals in electrostatic fields

We have measured production cross-sections of the new neutron-rich isotopes "5"8Ti, "6"1V, "6"3Cr, "6"6Mn, "6"9Fe, "7"1Co and neighbouring isotopes that have been identified as projectile fragments from reactions between a 500 MeV/u "8"6Kr beam and a beryllium target. The isotope identification was performed with the zero-degree magnetic spectrometer FRS at GSI, using in addition time-of-flight and energy-loss measurements. The experimental production cross-sections for the new nuclides and neighbouring isotopes are compared with an empirical parametrization. The resulting prospects for reaching even more neutronrich isotopes, such as the doubly-magic nuclide "7"8Ni, are discussed. (orig.).

High-Resolution Infrared Spectra of Bicyclo[1.1.1]pentane

Electrostatic fields of the order of 1 V/Angst, as they occur at field emission tips, are comparable to those experienced by valence electrons in atoms and molecules. Such fields are strong enough to induce a significant redistribution of the valence charge in chemical bonds. In this work we investigate the effects on the electronic properties of a single adatom on a metal surface induced by the presence of an electrostatic field. In particular we present the results of a full ab initio DFT calculation, within the embedding method, of the CCV Auger spectra of Si and Mg atoms in and on a jellium-Ag host. Differently from impurities in bulk, Auger spectral profiles of adsorbates on metal surfaces can show notable modifications due to the applied electric field.

2002-11-15

Structural transformation of Li{sub 2}CoPO{sub 4}F upon Li-deintercalation

Infrared spectra of bicyclo[1.1.1]pentane (C5H8) have been recorded at a resolution (0.0015 cm-1) sufficient to resolve for the first time individual rovibrational lines. This initial report presents the ground state constants for this molecule determined from the detailed analysis of three of the ten infrared-allowed bands, v14(e?) at 540 cm-1, v17(a2?) at 1220 cm-1, v18(a2?) at 832 cm-1, and a partial analysis of the v11(e?) band at 1237 cm-1. The upper states of transitions involving the lowest frequency mode, v14(e?), show no evidence of rovibrational perturbations but those for the v17 and v18 (a2?) modes give clear indication of Coriolis coupling to nearby e? levels. Accordingly, ground state constants were determined by use of the combination-difference method for all three bands. The assigned frequencies provided over 3300 consistent ground state difference values, yielding the following ...

2010-07-01

British Library Electronic Table of Contents (United Kingdom)

Electrochemical performance and structural properties of the high-voltage cathode material Li{sub 2}CoPO{sub 4}F have been investigated. The cyclic voltammetry and coulometry under potential step mode in the voltage range 3.0-5.1 V vs. Li revealed a structural transformation at potentials above 4.8 V. This transformation occurring upon Li-extraction appears to be irreversible: the subsequent Li-insertion does not result in restoration of the initial structure, but takes place within a new ''modified'' framework. According to the structure refinement this modification involves the mutual rotations of (CoO{sub 4}F{sub 2}) octahedra and (PO{sub 4}) tetrahedra accompanied by the considerable unit cell expansion which is expected to enhance the Li-transport upon subsequent cycling. The new framework demonstrates a reversible Li-insertion/extraction in a solid-solution regime with stabilized discharge capacity at ...

2011-01-01

Percutaneous coronary revascularisation [PCR] improves angina and health related quality of life [HRQOL] compared to standard medical therapy. It is unknown whether PCR has the same benefits for patients with a history of CABG. Over a period of 5?years, we assessed HRQOL of patients undergoing PCR using Part 1 of the Nottingham Health Profile [NHP] at baseline 3, 12 and 24?months. We compared HRQOL after PCR in 255 patients with CABG to 2680 without. There were more males [81.1% v 69.6% p?=?0.002] and older patients [mean age 60.1?years v. 58.0 p?=?0.03] in CABG group. Perceived HRQOL improved at 24?months for pain, energy and emotional reaction but the improvement was less in the CABG group. However, mean NHP scores at 24?months for those with CABG had returned to baseline levels for slee...

2011-01-01

Effect of chemical composition of SiOx films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiation

British Library Electronic Table of Contents (United Kingdom)

Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO2/SiOx /SiO2/Si(100) stacked structure. The chemical composition of SiOx layer was controlled by changing the SiH4, He, and O2 gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 1012 cm-2 carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband vo...

2010-01-01

1 2 3 4

Beta-decay studies of neutron-rich Sc-Cr nuclei

Aluminum assisted electrodeposition of europium in LiCl-KCl molten salt

The neutron-rich nuclei"5"7","5"8_2_1Sc,"5"8"-"6"0_2_2Ti,"6"0"-"6"3_2_3V,"6"2"-"6"6_2_4Cr have been produced at Ganil via interactions of a 61.8A MeV "7"6Ge beam with a "5"8Ni target. Beta-decay studies have been performed using combined #beta#- and #gamma#-ray spectroscopy. Half-lives have been determined and #beta#-decay schemes are proposed for "5"8Ti, "6"1V and "6"2Cr. From these studies, new hints for the existence of #beta#-decaying isomers in "6"0V and in "6"2Mn are provided. These results are compared to shell model calculations. The role of the #pi#f_7_/_2- #nu#f_5_/_2 proton-neutron interaction is examined through its influence on the lifetime values. (orig.)

2005-01-01

Aluminum assisted electrodeposition of europium in LiCl-KCl molten salt

Cyclic voltammetry (CV), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to investigate the electrodeposition of Eu and Al in an LiCl-KCl eutectic melt containing Eu{sup 2+} and Al{sup 3+} at 450 deg. C. In order to deposit a pure Eu and Al alloy, the stoichiometrically lower concentration of Al{sup 3+} than that of Eu{sup 2+} and Al wires as a counter electrode was introduced into the bath of LiCl-KCl melt for the electrodeposition. The electrodeposition takes place at a potential more negative than -1.95 V vs. Ag|Ag{sup +} while the deposit is oxidized at more positive potential than -1.92 V. Two new reduction peaks and an anodic peak on a W working electrode were observed at -2.39 V, -2.42 V, and -2.1 V, vs. Ag|Ag{sup +}, respectively, suggesting that the potential window of the Al system in LiCl-KCl melt can be extended to -2.43 V vs. Ag|Ag{sup +}. The EDS analysis indicated that AlEu can be ...

2010-03-01

Alignments, additivity, and signature inversion in odd-odd "1"7"0Ta: A comprehensive high-spin study

Cyclic voltammetry (CV), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to investigate the electrodeposition of Eu and Al in an LiCl-KCl eutectic melt containing Eu2+ and Al3+ at 450 deg. C. In order to deposit a pure Eu and Al alloy, the stoichiometrically lower concentration of Al3+ than that of Eu2+ and Al wires as a counter electrode was introduced into the bath of LiCl-KCl melt for the electrodeposition. The electrodeposition takes place at a potential more negative than -1.95 V vs. Ag|Ag+ while the deposit is oxidized at more positive potential than -1.92 V. Two new reduction peaks and an anodic peak on a W working electrode were observed at -2.39 V, -2.42 V, and -2.1 V, vs. Ag|Ag+, respectively, suggesting that the potential window of the Al system in LiCl-KCl melt can be extended to -2.43 V vs. Ag|Ag+. The EDS analysis indicated that AlEu can be deposited at the potential more negative than ...

2010-03-01

Low energy resolvent bounds for elliptic operators: An application to the study of waves in stratified media and fiber optics

High-spin states (I < or approx. 50(#Planck constant#/2#pi#)) of the odd-odd nucleus "1"7"0Ta have been investigated with the "1"2"4Sn("5"1V,5n) reaction. The resolving power of Gammasphere has allowed for the observation of eleven rotational bands (eight of which are new) and over 430 transitions (#approx#350 of which are new) in this nucleus. Many interband transitions have been observed such that the relative spins and excitation energies of the 11 bands have been established. This is an unusual circumstance in an odd-odd study. Configurations have been assigned to most of these bands based upon features such as alignment properties, band crossings, B(M1)/B(E2) ratios, and the additivity of Routhians. A systematic study of the frequency at which normal signature ordering occurs in the #pi#h_9_/_2#nu#i_1_3_/_2 band has been performed and it is found that its trend is opposite to that observed in the #pi#h_1_1_/_2#nu#i_1_3_/_2 bands. A ...

2010-06-01

Effect of chemical composition of SiO{sub x} films on rapid formation of Si nanocrystals induced by thermal plasma jet irradiation

For the positive self-adjoint operators H = -#partial deriv#_i_g_i_j(x)#partial deriv# + q(x) on H triple-bond L"2(R"n) with n #>=# 3, it is shown that parallel(|x|)"-"1(#sq root#H - z)"-"1(|x| + 1)"-"1 parallel ##0"+, by imposing several conditions on g_i_j and q. In the special case g_i_j = c"2#delta#_i_j these conditions reduce to |x|#centre dot##nabla#c, (x"2 + 1)"1"+"v"a"r"-"e"p"s"i"l"o"n(|q(x)| + |x#centre dot##nabla#q|) #epsilon# L"#infinity# with the nontrapping condition (c - x#centre dot# #DELTA#c) #>=# kc, and a positivity condition C(x"2 + 1)"-"1 # 0. Results are applied to the stratified wave equation (#partial deriv#_t"2 - c"2(y)#DELTA#_z)#psi# = 0, where z = x circle-plus y #epsilon# R"k circle-plus R"m with n = k + m, and |y|(y#centre dot##nabla#_yc)#epsilon# L"#infinity#(R"m). In all cases the condition (c-y#centre dot##nabla#_yc) #<=# kc leads to a local-energy decay estimate for #psi#(z,1). 11 refs.

1995-01-01

ASTEC and MELCOR comparison for a VVER-1000 60 mm small break LOCA

Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO{sub 2}/SiO{sub x} /SiO{sub 2}/Si(100) stacked structure. The chemical composition of SiO{sub x} layer was controlled by changing the SiH{sub 4}, He, and O{sub 2} gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 10{sup 12} cm{sup -2} carriers are injected to or emitted from Si nanocrystals. The duration of 1 V shift in flatband voltage was {proportional_to}0.1 ms with 20 V pulse, and charged carriers were stably maintained for ...

2010-04-15

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

In this paper a comparison between severe accident calculations performed for a WWER 1000 with the ASTEC1.1v0 and MELCOR 1.8.5 computer codes for a small break LOCA (ID 60 mm) without intervention of hydro accumulators is presented. This investigation has been performed in the framework of the SARNET project under the EURATOM 6th framework program. Once the accident sequence scenario is specified, both codes (MELCORE and ASTEC) are able to determine the core and containment damaged states, to estimate the release of radionuclides from the fuel as well as from the primary circuit and containment. Theses results are used to estimate the maximum period of the time during which the personnel could still take particular decisions in order to mitigate such an accident. The aim of the performed analysis is to estimate the discrepancy between ASTEC and MELCORE 1.8.5 calculations. Such discrepancies will be studied, if the case, proposal for ASTEC ...

2005-06-08

Measurement and analysis of neutron production cross sections and determination of some reaction rates for nuclear astrophysical calculations

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt ...

2010-02-01

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

The absolute cross sections of "2"3Na(p,n)"2"3Mg, "2"7Al(p,n)"2"7Si and "3"0Si(#alpha#,n)"3"3S reactions were measured in the incident energy range of 5.05 to 5.80, 5.80 to 6.25 and 3.975 to 6.235 MeV respectively using a spherically shaped 4#pi# neutron detector. In the energy range 5.80 to 7.80 and 6.235 to 11.30 MeV the absolute cross sections of "2"3Na(p,n)"2"3Mg and "3"0Si-(#alpha#,n)"3"3S reactions were determined by optical model calculations. The cross sections of the inverse reactions "2"3Mg(n,p)"2"3Na and "3"3S(n,#alpha#)"3"0Si were also calculated by the same method for the neutron energy range of 10 keV to 7.50 MeV for each reaction. The cross section of the latter reaction in the neutron energy range of 10 keV to 840 keV was also determined from its inverse reaction "3"0Si(#alpha#,n)"3"3S by the application of the detailed balance theorem. The reactions for which the cross sections were determined are of importance in stellar evolution and nucleosynthesis in stars. The ...