CERN Document Server

Photoselective Chemistry

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No abstract prepared.

International Nuclear Information System (INIS)

The development of tough #alpha#-SiAlON with elongated grains in the last five years is summarized. This progress has been guided by the improved understanding of phase relations and nucleation/growth kinetics in SiAlON ceramics. Although most #alpha#-SiAlON compositions can be processed to contain some elongated grains, their microstructure, fracture toughness and R-curve behavior vary greatly. Such variability is due to the different phase stability of #alpha#-SiAlONs and the varying physical chemistry of the competing phases, including the transient/residual liquid. For this reason, microstructure control of #alpha#-SiAlON must pay close attention to the composition, starting powder and heating schedule. Seeding with single crystals of an appropriate #alpha#-SiAlON composition provides an attractive alternative that simplifies the task of ...

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In this review, the most important inorganic natural gels are presented: opal, aluminosilicate (allophanes) and hydrous iron oxides and silicates. It is demonstrated that natural gels are ordered at the atomic scale. In allophanes, Al is distributed between octahedral and tetrahedral sites. The amount of Al increases as Al/Si ratio decreases. Si-rich allophane have a local structure around Al and Si very different of that is known in kaolinite or halloysite. Transformation of Si-rich allophanes to crystallized minerals implies dissolution-recrystallization processes. On the contrary, in iron silicate with Fe/Si = 0.72, Si and Fe environments are close to those found in nontronite. The gel transformation to Fe-smectite may occur by long range ordering during ageing. In ferric silicate gels, the similarity of local structure around Fe in poorly ordered precursors ...

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Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. {copyright} {ital 1998 American Vacuum Society.}

Science.gov (United States)

Samples dredged from the sediment mounds have a unique chemistry and mineralogy which reveals details of the hydrothermal processes that produce these deposits. The mounds form primarily by deposition of Fe, Mn and Si from hydrothermal fluids which circulate through the basalt crust and the overlying sediments. The Mn, Fe and Si are strongly fractionated in the process; the Fe and Si precipitate within the mounds under slightly reducing conditions as nontronite, while the Mn is deposited as Mn oxyhydroxides at the seawater-sediment interface. The nontronite is exceptionally well crystallized, and contains less than 200 ppm Al. The Mn minerals, todorokite and birnessite, also have exceptional crystallinity and the distribution of trace elements Cu, Ni, Zn, Co, Ca and Ba in these phases agrees with predictions made on the basis of models of their crystal structure. The environment of deposition which ...

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The nature and properties of inorganic /sup 211/At-species formed in aqueous solutions under alkaline, neutral, acidic and oxidative conditions are studied through extraction of At with a variety of organic solvents, followed by the determination of the chromatographic, re-extraction and interaction behaviour of the extracted activity. It is concluded from the Rsub(f) values (on SiO/sub 2/) and the different affinities for a large amount of additives, that the extracted activity - formerly denoted as At-zero - exists of AtX compounds that may form AtXLsub(u) complexes, depending on the kind of solvent (L) used.

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No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

The Alloy 800 tubes used in CANDU 6 steam generators have not experienced significant corrosion damage to date, which may be attributed to successful water chemistry control strategies. However, it is known that Alloy 800, like other steam generator (SG) tubing materials, is not immune to corrosion, especially pitting, under some plausible but off-specification operating scenarios. Electrochemical measurements provide information on corrosion susceptibility and rate, which are known to be a function of water chemistry. Using laboratory data in combination with chemistry monitoring and diagnostic software it is possible to assess the impact of plant operating conditions on SG tube corrosion for plant life management (PLIM). In this context, this paper discusses the results of electrochemical measurements made to elucidate the corrosion behaviour of Alloy 800 SG tubes under conditions simulating those plausible in SG ...

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Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ...

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UK PubMed Central (United Kingdom)

The development of colorimetry and spectroscopy in the nineteenth century is described. An account is given of the application of their techniques to biological chemistry during that period.

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The chemical thermodynamic concepts used in the calculation of solubility data of silica (quartz) are presented taking into account the PVT characteristics of water. The temperature-dependence trends between the thermodynamically calculated and the experimental quartz solubility data are very similar, but the values are widely different at high temperatures. The experimental solubility, especially along the saturation curve at high temperature and thermodynamic data for silica need to be reevaluated in order to use silica chemistry to understand geological processes. There could exist a wide range of values for silica solubility at a specified temperature, depending upon the amount of water in the reaction vessel. Thus the silica contents in geothermal fluid, in general, cannot be used as a geothermometer to estimate the reservoir temperature. The derivation of a silica geothermometer needs an extra assumption about the total amount of water in the system. The ...

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A comparison of the loss mechanisms in screen-printed solar cells relative to buried contact cells and cells with photolithography-defined contacts is presented in this paper. Model calculations show that emitter recombination accounts for about 0.5% absolute efficiency loss in conventional screen-printed cells with low-sheet-resistance emitters. Ohmic contact to high-sheet-resistance emitters by screen-printing has been investigated to regain this efficiency loss. Our work shows that good quality ohmic contacts to high sheet-resistance emitters can be achieved if the glass frit chemistry and Ag particle size are carefully tailored. The melting characteristics of the glass frit determine the firing scheme suitable for low contact resistance and high fill factors. In addition, small to regular Ag particles were found to help achieve a higher open-circuit voltage and maintain a low contact resistance. This work has resulted in cells with high fill factors (0.782) on ...

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Three phosphate based ceramics were studied for the immobilization of tri- and tetravalent actinides: britholites Ca{sub 9}Nd{sub 1-x}An{sub x} {sup IV}(PO{sub 4}){sub 5-x}(SiO{sub 4}){sub 1+x}F{sub 2}, monazites/brabantites Ln{sub 1-2x}{sup III}Ca{sub x}An{sub x}{sup IV}PO{sub 4} and Thorium Phosphate Diphosphate (TPD) Th{sub 4-x}An{sub x}{sup IV}(PO{sub 4}){sub 4}P{sub 2}O{sub 7}. For each material, the incorporation of Th, U(IV), or Ce(IV) in the structure was examined. This work was the early beginning of the incorporation of {sup 239}Pu and/or {sup 238}Pu in order to evaluate the effects of {alpha} -decay on these three crystallographic structures. The syntheses were carried out using dry chemistry methods, involving mechanical grinding then heating treatment (1100 deg C {<=} {theta} {<=} 1400 deg C). For britholites, we showed that the incorporation of thorium was complete for weight loading lower than 20 wt.% through the ...

Science.gov (United States)

NSF-NIST Interaction in Chemistry, Materials Research, Molecular Biosciences, Bioengineering, and ... Laboratory (CSTL). Materials research is centralized in the Materials Science and Engineering ...

KoreaScience (Korea)

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The leached glass is subject to leachant attack and results in surface layer alteration which greatly affects the corrosion progress of glass forms. This work studied the composition change, precipitation, pitting corrosion as well as surface layer break and spallation of the leached glass forms. 6 conclusions can be made: 1. The extent of surface layer alteration is related to many factors such as temperature, pH, leachant chemistry, flow rate and leach duration, etc. 2. The alkali element Na is seriously depleted and the elements like U.Ti,Fe, Ca and Mg are enriched in the surface layer. The influence of media has such order: Fe{sub 2}O{sub 3} > Na-bentonite > Zeolite. 3. The precipitate formed in leach test for 56 days at 90 {infinity}C is mostly amorphous, but after 91 days has crystallized. There is K - Ca - Al - Si crystal,the amount of Al, K and Si is increasing, but the amount of Ca is decreasing along ...

International Nuclear Information System (INIS)

Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi_2 was formed on amorphous Si substrates at 350 "0C, while NiSi remained stable on crystalline Si substrates even at 400 "0C. PtSi reacted with Si to form a metastable Pt_4Si_9 phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt_4Si_9 was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for ...

International Nuclear Information System (INIS)

... v. 1267(1) RADIATION CHEMISTRY, RADIOCHEMISTRY AND NUCLEAR

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... diagnosed. A complete blood count (CBC), urinalysis, blood chemistries, and erythrocyte sedimentation rate (ESR) tests can provide ...

International Nuclear Information System (INIS)

On the basis of experimental and extrapolated values the physico-chemical properties of astatine are reviewed considering all oxidation states.

International Nuclear Information System (INIS)

Short review of works on astatine chemistry carried out by authors for the last thirty years are done. Discovery of single-charged cation stable in aqueous solutions is predominant attainment of authors in the branch of inorganic chemistry. The first successful synthesis of heptavalent astatine compounds is a new and significant result of the last years. New direction in the chemistry of the fifth halogen is organic chemistry of astatine

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A discussion is presented of the chemistry and technology of coal liquefaction and the physics and technology of coal desulfurization. 31 refs.

International Nuclear Information System (INIS)

Short communication.

Science.gov (United States)

... AT THE INTERFACE, A THIN OXIDE LAYER IS OBSERVED ALONG WITH POSSIBLE PALLADIUM SILICIDES. PALLADIUM ...

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and ...

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni/sub 2/Si, while Si is the diffusing species in CrSi/sub 2/. In Pd/sub 2/Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems.

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The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies ...

British Library Electronic Table of Contents (United Kingdom)

The tribological properties of gas pressure sintered SiAlON and its composite with 18wt% silicon carbide (SiC) against two different mating materials, i.e., alumina and SiAlON are evaluated. SiAlON and SiAlON-18%SiC composite ceramics were prepared by pressure less sintering and gas pressure sintering. Fretting wear tests were carried out under dry unlubricated ambient conditions (room temperature 23-25^oC; relative humidity 50-55%) with a load of 8N for 45,000 cycles. Friction and wear properties of SiAlON-SiC proved better than the monolithic SiAlON. The formation of silica roll like structure on the composite worn surface was observed.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

International Nuclear Information System (INIS)

SiSiC is one of selected materials for the thermal chemical hydrogen production IS (Iodine-Sulfur) process at JAERI. SiSiC was tested in boiling sulfuric acid for 1000 hours. The obtained results showed the following facts. The transverse strength was not changed by sulfuric corrosion, high temperature oxidation and oxidation. Silica scale formed on SiSiC by sulfate corrosion and high temperature oxidation had corrosion resistance in boiling sulfuric acid. Bilayer structure of silica scale produced by high temperature oxidation was not affected by sulfate corrosion. (S.Y.).

Science.gov (United States)

The consequences of structural modifications at the 5'-OH ribofuranotide moiety of quinoline modified B12 derivatives are discussed in regard of the coordination chemistry, the electrochemical properties and the biological behaviour of the compound. PMID:21850334

International Nuclear Information System (INIS)

... Development Center, National Tsing-Hua University, Hsinchu, TW (China)

Energy Technology Data Exchange (ETDEWEB)

The discovery of nearly sixty molecules, often unstable or complexes, in the interstellar space has been one of the greatest surprises of contemporary astronomy. We may, indeed, be surprised that molecules having up to 13 atoms might be synthetized in an extremely diluted space and at a very low temperature. That these molecules are, most of all, organic molecules is another astonishing subject, at least for the non-specialist. The interstellar molecule formation is indeed well understood nowadays, at least for the simplest ones. This article takes stock of interstellar chemistry which is essentially an ionic chemistry very different from laboratory chemistry.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The application of photopolymerisation (UV) and electron beams (EB) technologies in radiation rapid cure (PRC) processing is discussed. The chemistry associated with such reactions and the mechanisms of the processes are treated. The occurrence of concurrent grafting to substrate with radiation curing of films is shown to be an advantage in enhancing the properties of certain finished products. The parameters influencing the optimum grafting yield in such PRC processes are discussed. In many applications, the chemistry of such processes combined with the machine, specially for EB is shown. (author).

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The reaction of uranium oxides and chlorine to prepare anhydrous uranium tetrachloride (UCl{sub 4}) are important to more economical preparation of uranium metal. The most practical reactions require carbon or carbon monoxide (CO) to give CO or carbon dioxide (CO{sub 2}) as waste gases. The chemistry of U-O-Cl compounds is very complex with valances of 3, 4, 5, and 6 and with stable oxychlorides. Literature was reviewed to collect thermochemical data, phase equilibrium information, and results of experimental studies. Calculations using thermodynamic data can identify the probable reactions, but the results are uncertain. All the U-O-Cl compounds have large free energies of formation and the calculations give uncertain small differences of large numbers. The phase diagram for UCl{sub 4}-UO{sub 2} shows a reaction to form uranium oxychloride (UOCl{sub 2}) that has a good solubility in molten UCl{sub 4}. This appears more favorable to good rates of reaction than ...

International Nuclear Information System (INIS)

The transformation of Pd/Si to Pd_2Si/Si is studied using Auger electron spectroscopy over a wide temperature range of 370-1020 K. The Pd film gets totally converted to Pd_2Si upon annealing at 520 K, and beyond 570 K, Si starts segregating on the surface of silicide. It is found that the presence of surface oxygen influences the segregation of Si. The time evolution study of Si segregation reveals that segregation kinetics is very fast and the segregated Si concentration increases as the temperature is increased. Scanning electron microscopy measurements show that Pd_2Si is formed in the form of islands, which grow as the annealing temperature is increased.

International Nuclear Information System (INIS)

The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd_2Si films on Si left angle 111 right angle substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi_2 formation in the Si left angle 100 right angle /Pd_2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi_2 formation via dissociation of ...

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

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The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von ...

International Nuclear Information System (INIS)

SiC-AlN and SiC-SiAlON refractory composites were obtained by means of nitridation of the mixtures of silicon carbide (SiC) powder with a broad granulometric distribution and powders of aluminium (Al) and aluminium-silicon (Al-Si) mixtures. The mixtures of the composition Al-25% Si, Al-50% Si and Al-75% Si were previously prepared by means of 'mechanical alloying' technique. Thermodynamic analysis was accomplished in order to evaluate the viability of SiC-SiAlON and SiC-AlN refractories production by the chosen processing method, and the results confirmed viability of such. Investigation of nitridation of Al and Al-Si powder compacts in order to obtain the AlN and #beta#-SiAlON matrix phases of the composite was accomplished by means of differential thermal ...

International Nuclear Information System (INIS)

MoSi_2-particulate-reinforced #alpha#-SiAlON ceramic composites 10, 20, 25, and 30 vol% were prepared by at 1,750--1,800C. The #alpha#-SiAlON matrix was of the composition (Y_0_._4_8Si_1_0_._0_0Al_2_._3_0O_1_._1_7N_1_5_._2_9). The hardness for the fully dense samples changed from HV10 = 22.5 to 15.3 GPa and the toughness from 3.2 to around 5.2 MPa#centre dot#m"1"/"2 when up to 30 vol% MoSi_2 was present. Two interesting microstructural features have been found. First, with an increasing amount of MoSi_2 a pronounced coalescence of MoSi_2 particles formed a ''dual phase'' material. The second effect was the growth of elongated #alpha#-SiAlON grains in the matrix with 10 vol% MoSi_2 added. The oxidation resistance has been determined, to be unaffected by the addition of 20 vol% ...

International Nuclear Information System (INIS)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).

International Nuclear Information System (INIS)

Si/Ni alloy and graphite composites were synthesized using arc-melting followed by high energy mechanical milling (HEMM). Alloy particles comprising of NiSi2, NiSi and Si phases were distributed finely and uniformly on the surface of graphite in the composites obtained after Hem. The composite containing 60 wt.% of Si/Ni alloy exhibited a stable capacity of ?780 mAh/g. Fourier transform infrared spectroscopy (FTIR) analysis confirmed that some bonds were formed between alloy and graphite after HEMM, which appeared to retain the electrical connection between alloy and graphite during cycling. X-ray diffraction (XRD) analysis indicated that NiSi2 and NiSi phases, which acted as an inactive alloy matrix remained invariant during charge and discharge. In addition to NiSi2 and NiSi phases, disordered ...

International Nuclear Information System (INIS)

The annealing behavior of the radiation damage in epitaxial Pd_2Si and NiSi_2 films on Si, due to the implantation of 100 keV Ar ions, is investigated by using the channeling technique with "4He ions. (U.K.).

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The transformation of Pd/Si to Pd{sub 2}Si/Si is investigated using depth-resolved positron annihilation, x-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022-1.054 indicates the existence of divacancies across the silicide/silicon interface and Si substrate region. Our experimental observation of vacancy defects is consistent with the model proposed for excess vacancy generation across the interface consequent to Si diffusion. (letter to the editor)

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We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

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High-field magnetization properties of single crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were investigated. Two-step metamagnetic transition (H{sub c1}=25.4 T and H{sub c2}=26.0 T) was observed in the case of CeRh{sub 2}Si{sub 2}, whereas no anomaly was found in the magnetization process of CePd{sub 2}Si{sub 2} up to 28 T. The mean field analysis has shown that CeRh{sub 2}Si{sub 2} is quite anisotropic compared to CePd{sub 2}Si{sub 2}, which results in the sharp contrast between the magnetization processes of the two compounds.

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Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

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Effect of Al and AlP particles on the microstructure of near eutectic Mn-Si alloy (Mn-30 wt.%Si) was studied by Electron Probe Micro-analyzer (EPMA) and Differential Scanning Calorimeter (DSC). Crystal lattice correspondence analyses show that both Al and AlP have good lattice matching coherence relationships with MnSi phase, and the addition of Al and AlP particles results in an abnormal eutectic structure, i.e. the eutectic constitution MnSi and Mn{sub 5}Si{sub 3} precipitate separately: MnSi precipitates firstly, and then the Mn{sub 5}Si{sub 3} phase.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

International Nuclear Information System (INIS)

Epitaxial cobalt disilicide (CoSi_2) layers are grown on n-Si_0_._8_3Ge_0_._1_7/n-Si(001) using a sacrificial Si capping layer at the growth temperature T_s=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co(#eta#"5-C_5H_5)(CO)_2). Structural and electrical properties of epi-CoSi_2/Si_0_._8_3Ge_0_._1_7/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi_2 phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial ...

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the ...

Energy Technology Data Exchange (ETDEWEB)

Absorption with aqueous amine solvents is at present the most viable technology for CO{sub 2} capture. While this is a proven technology, efforts are ongoing to improve it in order to make it a more attractive technology for large scale use to reduce CO{sub 2} emissions. Finding solvents with better properties is one approach to improving the technology. In this thesis methods in computational chemistry are used to improve the understanding of the chemistry of CO{sub 2} absorption in amine-water systems. The work is also intended to provide models that can be used to predict the performance of new solvents. Such predictive models are intended to facilitate the screening for new solvents

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex ...

International Nuclear Information System (INIS)

The diffusion coefficients (De) in bentonite were measured to understand and quantify the influence of groundwater chemistry such as ionic strength and to quantify the alteration of smectite mineralogical transformations. (author)

Science.gov (United States)

... the effect of MBH on steam generator crevice corrosion; model boiler test results show that MBH is effective against denting corrosion and Alloy 600 ...

International Nuclear Information System (INIS)

Water chemistry of nuclear power plants has played an important role in reduction of personnel doses, structural materials and fuel integrity assurance, and reduction of radioactive wastes production. Further contributions are requested for advanced utilization of the LWR, advanced fuels and aging management of plants. Since water chemistry has an effect on all structure and materials immersed and at the same time affected by them, the optimum control not sticking to specific issues and covering the whole plant is required for these requests. Taking account of roles and activities of the industry, governmental institutes and academia, road maps on research and development plans for water chemistry were compiled into identified eleven items with targets and counter measures taken, such as common basic technologies, dose reduction, SCC mitigation, fuel cans corrosion/hydrogen absorption mitigation, condition based maintenance ...

Science.gov (United States)

Aug 1, 1972 ... The principles of radionuclide excitation of X-ray fluorescence radiation and its application in analytic chemistry are discussed.

Energy Technology Data Exchange (ETDEWEB)

Ozone plays a critical role in both the chemistry and radiation balance of the troposphere. Understanding the factors controlling tropospheric ozone levels is critical to our understanding of a variety of issues in global chemistry and climate change. Chlorine atoms have the potential to contribute significantly to the ozone balance in the free troposphere. They can react directly with ozone or alternately, with organics and may actually lead to the formation of ozone in the presence of sufficient NO. Reactions of alkali halides in sea salt particles are a potential source of atomic chlorine, hence reactions of these alkali halides, especially those producing precursors to atomic chlorine, are of great interest. Finally, the mechanisms, intermediates and products of the Cl-biogenic reactions are unknown; these could serve as unique markers of chlorine atom chemistry in the troposphere, and hence are important to define.

Energy Technology Data Exchange (ETDEWEB)

The nitric oxide molecule is being studied in order to understand the energetics and chemistry of initiation and detonation in liquid NO at the molecular level. An overview is presented of the work being done. (DLC)

UK PubMed Central (United Kingdom)

Recent field observations have shown that the atmospheric plumes of quiescently degassing volcanoes are chemically very active, pointing to the role of chemical cycles involving halogen species and...Full Text Available

Science.gov (United States)

The NASA Langley Distributed Active Archive Center archives and distributes data relating to Radiation Budget, Clouds, Aerosols, and Troposheric Chemistry.

Science.gov (United States)

... with dynamic gridding capability to account for material ablation, as well as the addition of energy sources and heat transfer augmentation due to ...

International Nuclear Information System (INIS)

Synthesis of Eu-doped #beta#- and 15R-SiAlONs was studied by the ammonia nitridation of precursors derived from an #alpha#-Si_3N_4 fine powder dispersed in aluminum glycine gel with various Si/Al ratio and post-annealing in a nitrogen pressure furnace. The largest amount of #beta#-SiAlON was observed in the product at 1750 deg. C for Si/Al = 1/1 with small amounts of both #alpha#- and 15R-SiAlON impurities. The product showed two emissions at around 420 nm and 560 nm. The emission intensities decreased with increasing amount of #beta#-SiAlON. The former and latter emissions were assigned to Eu"2"+ in the 15R- and #alpha#-SiAlONs impurities. A mixture of Eu-doped 15R-SiAlON with #alpha#-Al_2O_3 impurity was obtained for Si/Al = 1/6, using AlN together with Al(NO_3)_3.9H_2O in a ...

International Nuclear Information System (INIS)

The formation kinetics of Pd_2Si for fully silicided (FUSI) gate formation and the work function tuning of a Pd_2Si FUSI gate by impurity predoping were investigated. It has been found that the morphology and phase of a formed FUSI layer depend not only on the silicidation annealing temperature but also on the heating ramp-up rate and the presence of impurities. Fast ramp-up annealing was necessary to avoid defect formation, such as voids in the silicide film at the oxide interface, and to obtain a homogeneous silicide film containing only Pd_2Si phase. The most severe effect on the silicidation reaction, that is the increase in defect formation, was brought about by As predoping. The work function of the Pd_2Si FUSI gate was modulated by impurity pileup at the Pd_2Si/SiO_2 interface, as in the case of the NiSi FUSI gate. However, the work function shifted in ...

Energy Technology Data Exchange (ETDEWEB)

The effect of Al and Be ions pre-implantation on microstructural change and, the formation and growth of He bubbles in SiC/SiC composite was investigated. Four kinds of ion implanted specimens were prepared with 100 appm Al, 1000 appm Al, 100 appm Be and 1000 appm Be implanted. No microstructural change was observed in the matrices and fibers of SiC/SiC composites implanted with Al or Be ions up to 1000 appm. The un-implanted and Al or Be pre-implanted SiC/SiC composites were simultaneously irradiated to 10 dpa using triple ion-beams (6.0-MeV Si{sup 2+}, 1.0-MeV He{sup +} and 340-keV H{sup +}) at 1000 deg. C. Helium bubbles were formed in every matrix and fiber irradiated by triple ion-beams. The size of He bubbles in the matrix was increased by implanting Al or Be ions and increased with increasing amount of implanted Al or Be ions. The size of He bubbles in the fiber was slightly increased by ...

International Nuclear Information System (INIS)

"2"7Al and "2"9Si solid-state NMR spectra and X-ray diffraction (XRD) patterns were obtained for #alpha#-SiAlON powders prepared by combustion synthesis, according to which the phase transformation and structure evolution of #alpha#-SiAlON were studied. It was found that in #alpha#-SiAlON "2"9Si chemical shift values (-48 < #delta# _S_i < -47) were close to those in #beta#-Si_3N_4 and #alpha#-Si_3N_4, indicating that Si atoms kept SiN_4 coordination to a large extent in #alpha#-SiAlON despite the presence of O atoms. Dissimilarly, "2"7Al chemical shift values in #alpha#-SiAlON deviated clearly from that corresponding to AlN_4 coordination (#delta# _A_l #approx# 112) and occurred in a range from #delta# _A_l 95.5 to 99.9, which ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

In Ce(Ru{sub 1-x}Pd{sub x}){sub 2}Si{sub 2} the dilution of the transition metal leads to strong electronic effects resulting in the disappearance and the appearance of long-range magnetic order in CePd{sub 2}Si{sub 2} and CeRu{sub 2}Si{sub 2}, respectively. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The Si L/sub 2/ /sub 3/VV Auger Lineshape for Pd/sub 4/Si was measured and found to be in good agreement with the self-fold of the Si partial density of states model calculated by Riley et al. Oxygen chemisorption altered both the Auger lineshape and the HeI photoemission spectrum, especially near the Fermi energy.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... chemical reactions high temperature lattice parameters microhardness

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion ...

Science.gov (United States)

We report results of measurements and analysis of the heat capacity of MnSi. The measurements included data collection at a magnetic field of 4T, which suppresses strongly the longitudinal spin fluctuations and the phase transition. To analyze the experimental data, calculations of the phonon spectrum and phonon density of states in MnSi were performed. Inelastic neutron scattering with a polycrystalline sample of MnSi was used to validate the computational results. The combination of the experimental and theoretical data turned out to be decisive in revealing some hidden features of the thermal excitations in MnSi. In particular, the analysis of the available data led conclusively to the existence of a negative contribution to the heat capacity and entropy in MnSi at T>Tc, implying that a specific spin ordering process did occur in the paramagnet phase of ...

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

International Nuclear Information System (INIS)

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

International Nuclear Information System (INIS)

The compounds CePdSi_2, CeIrSi_2 and CeRhSn_2 have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi_2 exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi_2 shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn_2 remains paramagnetic down to 5 K. The resistivity of CeIrSi_2 exhibits a T"2 dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi_2 and CeRhSn_2 shows the presence of Kondo and crystal field effects. (orig.).

International Nuclear Information System (INIS)

#beta#-SiAlON was synthesized from a zeolite by NH_3 gas nitridation and its formation mechanism was investigated using X-ray diffraction and "2"9Si and "2"7Al NMR spectroscopy. It was revealed that most of the Si and Al atoms react to form #beta#-SiAlON via amorphous forms of Si-Al-O-N and O-SiAlON. Nitridation using NH_3 gas is an effective means of preventing mullite formation and promoting the introduction of nitrogen into aluminosilicate materials at lower temperatures than temperatures required by the carbothermal reduction nitridation process. Further, the NMR spectra showed that the siliceous part of the system changed into low z-value of Si_6_-_zAl_zO_zN_8_-_z (#beta#-SiAlON) and the incorporation of Al components into the #beta#-SiAlON was promoted in the later stages of the reaction. ...

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from ...

UK PubMed Central (United Kingdom)

The use of 2-pyridinealdoxime (paoH)/N,N′-donor ligand (L-L) “blend” in cobalt chemistry has afforded two cationic mononuclear cobalt(III) complexes of the general type [Co(pao)₂(L-L)]⁺,...Full Text Available

Wastenet

...The number of documents that contain the keyword absolute zero is: 2 EU Descartes Prizes for excellence in research and science communication EU Descartes Prizes ...for excellence in research and science communication -Chemistry Close to Absolute Zero - Descartes Prize 2000 - Winner- Ian Smith EU Descartes Prizes for excellence ...in research and science communication EU Descartes Prizes for excellence in research and science communication -Chemistry Close to Absolute Zero - Descartes Prize 2000 ...

International Nuclear Information System (INIS)

This volume of the monograph covers the following topics: activation analysis, non-activation interaction analysis (elastic scattering of charged particles, absorption and backscattering of beta radiation and photons, radionuclide X-ray fluorescence analysis, thermalization, scattering and absorption of neutrons, use of ionization caused by nuclear radiation, use of ionization by alpha or beta radiation for the measurement of pressure, density and flow rate of gases), and automation in radioanalytical chemistry. (P.A.).

Wastenet

...Correction Discussion Editorial Letter Opinion Review Short Note Technical Note Special Issue all A Systematic Development Method for Rational Drug Design Advances in Molecular Electronic Structure Calculations Algorithms and Molecular Sciences Antimicrobial Agents Application of Density Functional Theory Applications of Density Functional Theory Applications of Molecular Dynamics Atoms in Molecules ...

Energy Technology Data Exchange (ETDEWEB)

Contents include: introduction; river systems; physical processes; chemical processes; estuaries and coastal zone; introduction; physical processes; chemical processes; the role of sediments; introduction; the anoxic layer; major-element chemistry; minor-element chemistry; the oxic-anoxic interface; assessment; introduction; analysis of sediments; modelling.

British Library Electronic Table of Contents (United Kingdom)

Ways of improving the water chemistry used in the turbine generator stator?s cooling systems at Russian nuclear power plants are considered. Data obtained from operational chemical monitoring of indicators characterizing the quality of cooling water in the turbine generator stator cooling systems of operating power units at nuclear power plants are presented.

International Nuclear Information System (INIS)

Sialons are phases in the Si-Al-O-N and M-Si-Al-O-N systems where M includes Li, Mg, Ca, Sc, Y and the rare earth elements. They are comparable in variety with the mineral silicates and are built up of one-, two-, and three-dimensional arrangements of (Si,Al)(O,N)/sub 4/ tetrahedra in the same way that the structural units of the silicates are SiO/sub 4/ tetrahedra. These new materials include N-containing ceramics, glasses and glass-ceramics that are being explored for their thermal, chemical and physical properties.

British Library Electronic Table of Contents (United Kingdom)

Palladium silicide was formed on the sol-gel derived SiO2 supported Pd catalysts prepared by ion-exchange method (Pd/SiO2-SG-ion). However, the catalysts exhibited superior performances than commercial SiO2 supported ones in liquid-phase semihydrogenation of phenylacetylene. It was probably due to an inhibition of a product of styrene, which is adsorbed on the surface of Pd, more strongly on Pd/SiO2-SG in which Pd is electron-deficient as shown by larger binding energy from XPS results.

International Nuclear Information System (INIS)

PWR plants have made efforts to maintain the long-term integrity of the steam generators (SG) by reducing the amount of corrosion products entering the secondary side of the SG. Iron entered the SG can cause several problems: degraded heat conductivity of the SG tubes in locations where iron is deposited, water level oscillations in the SG due to tube support plate hole blockage, and initiation and propagation of inter-granular attacks (IGA) and stress corrosion cracking (SCC). One of the most effective measures, high all-volatile treatment (AVT) chemistry has been applied to actual plants to reduce the flow-accelerated corrosion (FAC) coming from the carbon steel piping. The secondary water chemistry at Genkai NPS 1 and 2 changed, from the Low AVT chemistry to the High AVT chemistry, in November 2006. In this paper, we will describe the results of experiments in applying the use of High pH water in the ...

Energy Technology Data Exchange (ETDEWEB)

A test methodology for measuring temperature, impedance, pH, and electrochemical potential distributions within a sludge-packed tube support plate crevice in a laboratory test is described. The method successfully showed that there were large concentration gradients between the tube and tube support plate sides of the crevice. The testing also showed that strong bases concentrated more effectively than strong acids, and that the crevice pH, when exposed to seawater-based solutions, increased with increasing superheat and decreasing bulk concentration. The large variations in the crevice chemistry observed under heat transfer were eliminated upon shutdown. These new test data suggest that it might be beneficial to evaluate the variation in the extent of stress corrosion cracking with tube support plate elevation found in some steam generators in light of local chemistry changes, as well as the variation in tubing temperature. Because of the ...

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy ...

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) and dose loss (pile-up) are investigated for phosphorus-implanted samples covered with both oxide and nitride films. P ions were implanted into p-type (1 0 0) CZ-Si (dose 5x10"1"3 cm"-"3, 100 keV) through a chemical vapor deposition (CVD) Si_3N_4 film. For a half of samples, Si_3N_4 was etched off and SiO_2 films were grown by CVD. Both samples were annealed for 20-360 min at 700 deg. C. Diffusivity of P and the dose loss were estimated based on the secondary-ion mass spectrometry (SIMS) P profiles. Both Si/Si_3N_4 and Si/SiO_2 interfaces were investigated with transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). There is no significant difference in P diffusivity between the SiO_2 and Si_3N_4 films for the present annealing condition of 700 deg. C for ...

International Nuclear Information System (INIS)

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs ...

International Nuclear Information System (INIS)

Continuous freestanding SiC(Al) films were fabricated by melt spinning the aluminum-containing polycarbosilane (A-PCS) precursor. The results showed that the films contained #beta#-SiC crystals, #alpha#-SiC nano-crystals, C clusters and small amount of Al_4O_4C and Al_4SiC_4. The Al atoms in the films played important roles as both sintering aids and grain growth inhibitor. The PL spectrum showed a wide luminescence band from 320 nm to 440 nm, and the origin of PL centered at 385 nm might be related to the #alpha#-SiC nano-crystals using quantum size effects. The obtained films are expected to have important applications in MEMS for the environment of high temperature and optoelectronic devices.

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Single-crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce{sup 3+} ion and the surrounding ligands in CeRh{sub 2}Si{sub 2} turned out to be strong and highly anisotropic in comparison to CePd{sub 2}Si{sub 2}. (orig.) 10 refs.

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

British Library Electronic Table of Contents (United Kingdom)

Ni-Co/SiC nanocomposite coatings were electrodeposited in a modified watt type of Ni-Co bath containing 20nm SiC particles to be codeposited. Potentiodynamic polarization tests were conducted to study the effect of the SiC particulates on the electrodeposition of Ni and Co. Scanning electron microscopy was used to assess the morphology of the Ni-Co alloy and Ni-Co/SiC nanocomposite coatings. The distribution of the particulates in the matrix was considered by means of transmission electron microscopy. Applying nanomechanical testing instruments coupled to atomic force microscopy, mechanical properties of the alloy and composite coatings were studied and compared. The presence of 11vol.% SiC in the Ni-Co matrix increased hardness more than 60%. The average depth of scratch in the mentioned ...

Energy Technology Data Exchange (ETDEWEB)

The indirect conversion of coal to liquid hydrocarbons via steam gasification followed by synthesis gas (CO/H/sub 2/) chemistry has been the subject of intensive study for a number of decades. A key technological challenge facing researchers in this area is control over the product distribution during the hydrocarbon synthesis step. In the case of iron Fischer-Tropsch catalysts, it has been known that the addition of alkali to the metal catalyst has a significant impact on the product distribution. Iron catalysts treated with alkali produce less methane more alkenes and higher molecular weight products. In spite of numerous investigations, the details of this promotional effect are not understood on a molecular level. To explore the role of alkali in the surface chemistry of iron catalysts, the authors have carried out a combined surface science and catalytic kinetic study of a model iron catalyst with and without surface alkali.

Energy Technology Data Exchange (ETDEWEB)

This study report presents the shutdown chemistry of PWR primary system to reduce and remove the radioactive corrosion products which were deposited on the nuclear fuel rods surface and the outside of core like steam generator channel head, RCS pipings etc. The major research results are the follows ; the deposition radioactive mechanism of corrosion products, the radiochemical composition, the condition of coolant chemistry to promote the dissolution of radioactive cobalt and nickel ferrite, the control method of dissolved hydrogen concentration in the coolant by the mechanical and chemical methods. The another part of study is to investigate the removal characteristics of corrosion product ions and particles by the demineralization system to suggest the method which the system could be operate effectively in shut-down purification period. (author). 19 refs., 25 figs., 48 tabs.

International Nuclear Information System (INIS)

The CERL Code was developed to describe the solution chemistry of the water on the steam generating side of PWR reactors. It is designed to calculate the equilibrium species distribution resulting from the interaction of impurities, corrosion products, and additives in the aqueous solution. It calculates the extent of ion-ion interactions, the precipitation of insoluble species and the amount of solute that partitions into the vapor phase when some of the water evaporates. This knowledge of the bulk phase equilibrium distribution of species, especially the pH should be useful in describing the corrosion processes at the solid liquid boundary. The code does not calculate any changes in oxidation states or any rates of reaction. Therefore, it is incapable of calculating the actual corrosion rates. It is anticipated that it will be used as a subprogram of a larger program that will include the redox reactions and the rates of the reactions. The purpose of the code at ...

International Nuclear Information System (INIS)

A comprehensive review was conducted of primary helium coolant chemistry data, based on current and past operating histories of helium-cooled, high-temperature reactors (HTGRs), including the Fort St. Vrain (FSV) HTGR. A reference observed FSV reactor coolant environment was identified. Further, a slightly drier expected FSV coolant chemistry was predicted for reactor operation at 100% of full power. The expected environment was compared with helium test environments used in the US, United Kingdom, Germany, France, and Japan. Based on a comprehensive review and analysis of mechanical property data reported for Alloy 800 tested in controlled-impurity helium environments (and in air when appropriate for comparison), an assessment was made of the effect of FSV expected helium chemistry on material properties of alloy 800, with emphasis on design properties of the Alloy 800 material utilized in the FSV steam generators.

International Nuclear Information System (INIS)

The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and ...

Energy Technology Data Exchange (ETDEWEB)

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit ...

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the superconducting and metallurgical properties of the ternary compounds RPd/sub 2/Si/sub 2/ and RRh/sub 2/Si/sub 2/ with R = Y, La, and Lu. All RPd/sub 2/Si/sub 2/ compounds and LaRh/sub 2/Si/sub 2/ were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases can easily mask the intrinsic (stoichiometric ratio 1:2:2) intermetallic-compound properties. Two sample-preparation techniques, viz., single crystals and off-stoichiometry, were utilized to establish where bulk superconductivity occurs. The type-I behavior of these compounds is explained with an analogous model as is used for the heavy-fermion superconductors CeCu/sub 2/Si/sub 2/ and URu/sub 2/Si/sub 2/.

Energy Technology Data Exchange (ETDEWEB)

Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd/sub 80/Si/sub 20/ films, we have studied the correlation between the hydrogen content and the resistivity.

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at ...

Energy Technology Data Exchange (ETDEWEB)

Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the ...

International Nuclear Information System (INIS)

The crystal structure and phonon densities of states (DOS) of #beta#'-SiAlON ceramics, Si_6_-_zAl_zO"zN_8_-_z (0 #<=# z #<=# 4), prepared by a novel slipcast method, are studied by neutron-scattering techniques. The samples with z < 4 form a single-phase solid solution of Si-Al-O-N isostructural to #beta#-Si_3N_4 (space group P6_3/m). A consistent preferential occupation of the 2c sites by oxygen atoms and the 6h sites by nitrogen atoms exists within this structure. The phonon DOS of #beta#'-SiAlON displays phonon bands at #approx#50 and 115 meV. These features are considerably broader than the corresponding ones in #beta#-Si_3N_4 powder.

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The chemical interaction of a Si{sub 3}N{sub 4} ceramic with pristine and oxidised 100Cr6 steel was studied by means of static interaction couple experiments between 500 and 1200 C. Si{sub 3}N{sub 4} was not chemically stable in contact with oxidised steel at elevated temperatures, and reacts with the formation of N{sub 2}, SiO{sub 2} and/or Fe{sub 2}SiO{sub 4} at temperatures at and above 1000 C. At 700 and 500 C, Si diffusion into the oxide layer indicated the dissociation of the Si{sub 3}N{sub 4} ceramic. Si{sub 3}N{sub 4} also dissociated in contact with pristine steel. In the temperature region between 700 and 1100 C, the Si dissolves and diffuses into the steel whereas a nitrogen pressure is built-up in the voids of the metal-ceramic interface, limiting the degree of interaction. Above 1100 C, the nitrogen ...

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No abstract prepared

International Nuclear Information System (INIS)

... 194 p. auger electron spectroscopy decomposition deposition interfaces oxygen

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No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

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As concern regarding global environmental problems such as the greenhouse effect and acid rain has increased, so too has the demand for commercially viable solar cells as a clean energy source. Interest in amorphous silicon (a-Si) solar cells has been particularly high, due to their low cost. Technological developments in the field of a-Si solar cells are discussed from the viewpoints of fabrication process, materials, and cell structures. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are mentioned

International Nuclear Information System (INIS)

English Mar 1999 [vp.] United Kingdom Jumali, MHH Warwick Univ.,

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... susceptibility magnetization magnetoresistance monocrystals order-disorder

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Significantly improved immunity to hot-hole damage of the SiO[sub 2]/Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10[sup 16]/cm[sup 2]). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

Science.gov (United States)

The Bureau of Mines performed chemical research to elaborate details of sulfur chemistry pertaining to the citrate flue gas desulfurization process in which sulfur dioxide (SO2), absorbed (as bisulfite ion) in a buffered sodium citrate solution, is reduce...

UK PubMed Central (United Kingdom)

Enediynes are potent antitumor antibiotics that are classified as 9- or 10-membered according to the size of the enediyne core structure. However, almost nothing is known about enediyne core biosynthesis,...Full Text Available

International Nuclear Information System (INIS)

The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and ...

UK PubMed Central (United Kingdom)

In the State Laboratory of North Rhine-Westphalia for Food, Pharmaceutical and Environmental Chemistry (Chemisches Landesuntersuchungsamt), more than 600 individual human milk samples have been analyzed...Full Text Available

DEFF Research Database (Denmark)

The notes describe in detail primary and secondary galvanic cells, fuel cells, electrochemical synthesis and electroplating processes, corrosion: measurments, inhibitors, cathodic and anodic protection, details of metal dissolution reactions, Pourbaix diagrams and purification of waste water from galvanic industries.

Energy Technology Data Exchange (ETDEWEB)

Research programs on coal liquefaction are presented. Major topics include: coprocessing, two-stage liquefaction, low severity liquefaction, coal/catalyst and liquefaction chemistry. Individual projects are processed separately for the data bases. (CBS)

International Nuclear Information System (INIS)

In YbPd_2Si_2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature T_s_f increases and #chi#4f, the Yb derived 4f susceptibility, obeys the scaling law #chi#4f(T)=F(T/T_s_f). (orig.).

International Nuclear Information System (INIS)

The following methods of quartz ceramics alloying were considered: alloying of initial quartz glass; introduction of alloying additive into water slip of quartz glass; porous materials impregnation with salt aqueous solutions and subsequent salt thermal decomposition with formation of stable oxides in pores of ceramics. Oxygen free compounds BN, SiB_4, SiC, Si_3N_4, REM oxides and transition metal oxides were used as alloying additives. Main properties of the materials and compositions obtained are presented.

Science.gov (United States)

Resistivity measurements were performed on Fe40 Ni40 B20 and Pd80 Si20 in order to improve the understanding of structural relaxation in amorphous metals. A model describing structural relaxation as a combination of chemical short range ordering (CSRO) an...

International Nuclear Information System (INIS)

The Ksub(#beta#)/Ksub(#alpha# 12) x-ray intensity ratio of the Si K spectrum was measured for proton impact on Si0_2 in the energy range 300-800 keV. An energy dependence of the intensity ratio was found and an explanation is given in terms of multiple ionisation. (author).

International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

The interaction between a pair of counter-rotating vortices and a lean premixed CH{sub 4}/O{sub 2}/N{sub 2} flame ({Phi} = + 0.55) has been studied by direct numerical simulations using detailed and reduced chemical reaction schemes. Results from the complex chemistry simulation are discussed with respect to earlier experiments and differences in the simulations using detailed and reduces chemistry are investigated. Transient evolutions of the flame surface and the total heat release rate are compared and modifications in the evolution of the local flame structure are displayed. (authors) 22 refs.

International Nuclear Information System (INIS)

A review is given of the state of knowledge of the chemistry of astatine with the oxidation number +1. According to the position in the periodic system, astatine has metalloidal properties. The existence of a singly-charged cation in acid solution and the complex formation reactions with halide ions (Cl"-, Br"-, and I"-), with pseudohalide ions (SCN"-, CN"-, C(CN)_3"-, and N_3"-), and with thioureas and their derivatives underline the metalloidal character of At(I). Optimal preparation conditions, chemical composition of astatine compounds, existence and stability regions of At(I) complexes, and stability constants have been investigated by means of electromigration in free electrolyte solutions.

International Nuclear Information System (INIS)

In a supercritical water-cooled reactor, property of water changes significantly around the critical point. It is expected that irradiation and change of water property will affect the chemistry and material corrosion. Deep understanding of interactions between supercritical water and materials under irradiation is important. However, comprehensive data on radiolysis, kinetics, corrosion and thermodynamics have not been obtained due to the severe experimental condition. To get such data by experiments and computer simulations, a national program funded by Ministry of Education, Culture, Sports, Science and Technology (MEXT) has been started since December 2002. (author)

International Nuclear Information System (INIS)

Problem areas in BWRs, PWRs and PHWRs, from the viewpoint of chemistry, and the problem of fission product release in nuclear reactors are discussed. These problem areas are : fuel performance, off-normal water chemistry due to condenser leaks, the transport and deposition of the activated corrosion and fission products, denting in steam generators (in the case of PWRs), ingress of air in the cover gas helium and consequent radiolysis of D_2O in the moderator circuit (in the case of PHWRs). (M.G.B.).

Science.gov (United States)

The principles of modern pesticide residue chemistry were articulated in the 1950s. Early authors pointed out the advantages of systematizing and standardizing analytical methods for pesticides so that they could be widely practiced and the results could be reproduced from one laboratory to the next. The availability of improved methods has led to a much more complete understanding of pesticide behavior and fate in foods and the environment. Using methods based largely upon gas chromatography (GC) and high-performance liquid chromatography (HPLC) coupled increasingly with mass spectrometry (MS) and MS(n) as the detection tool, residues can be measured at parts per billion levels and below in a variety of food and environmental matrices. Development of efficient extraction and cleanup methods, techniques such as ELISA, efficient sample preparation techniques such as QuEChERS, and automated laboratory and field instrumentation has also contributed to the tools ...

Energy Technology Data Exchange (ETDEWEB)

Million-atom molecular-dynamics (MD) simulations are performed to study the structure, mechanical properties, and dynamic fracture in nanophase Si{sub 3}N{sub 4}. The authors find that intercluster regions are highly disordered: 50% of Si atoms in intercluster regions are three-fold coordinated. Elastic moduli of nanophase Si{sub 3}N{sub 4} as a function of grain size and porosity are well described by a multiphase model for heterogeneous materials. The study of fracture in the nanophase Si{sub 3}N{sub 4} reveals that the system can sustain an order-of-magnitude larger external load than crystalline Si{sub 3}N{sub 4}. This is due to branching and pinning of the crack front by nanoscale microstructures.

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The growth and properties of Si{sub 1{minus}y}C{sub y} and Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si{sub 1{minus}x{minus}y}Ge{sub x}C{sub y} layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.

Energy Technology Data Exchange (ETDEWEB)

Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd{sub 2}Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd{sub 2}Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed.

International Nuclear Information System (INIS)

The corrosion resistance of molybdenum, molybdenum disilicide, and a SiC_(_p_)/Al_2O_3 composite to molten E-glass at 1,550 C was studied. Mo showed no tendency to oxidize as it was immersed in soda-lime silicate glass in a parallel study. MoSi_2 was corroded by soluble molecular oxygen, leaving a Mo_5Si_3 interface behind. The SiC_(_p_)/Al_2O_3 composite was corroded at a more rapid rate wherein the SiC component was oxidized to form amorphous silica and CO bubbles. Based on these results, the activity of soluble molecular oxygen in E-glass was determined to be in the range of 2.4 x 10"-"1"4 to 2.0 x 10 "-"8.

International Nuclear Information System (INIS)

Phase transformations from #alpha#- to #beta#-SiAlONs (i.e., from #alpha#' to #beta#') have been recently reported in a number of rare-earth SiAlON systems during postsintering heat treatment. In the present work, this transformation process in a Sm (#alpha# + #beta#)-SiAlON material is studied by using XRD, TEM, and EDS X-ray mapping techniques. It is observed that in addition to the formation of #beta#' and M' phases, the #alpha#'-to-#beta#' transformation is accompanied by a significant increase in the amount of an AlN-polytypoid phase. The results suggest that some #alpha#' phases are thermodynamically unstable at temperatures lower than the material sintering temperature and will decompose when conditions allow. For the composition studied in this work, the #alpha#-SiAlON decomposition can be described in general as #alpha#' #-># #beta#' + M' + AlN polytypoid.

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Thin Pt, Pd, Pt/sub 2/Si, PtSi, Pd/sub 2/Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm/sup 2/ energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling.

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The purpose of the present study is to develop a new method for chemical state analysis by means of EPMA(Electron probe microanalyser). The measured X-ray intensity of Si-K{beta} characteristic X-ray spectra were read-out by a 16 bit microcomputer with a RS-232C interface. And using the curve fitting method the quantitative analysis of chemical compositions in a ternary compound that constituted of the same element has been established. The present method was applied to analyse of the friction and wear properties of Si-base ceramics sliding materials. It was found that the wear debris contains both the compositions of the sliding materials and SiO{sub 2}, and the SiO{sub 2} contents in wear debris was changed with relative humidity. The results clearly showed that the proposed method is very useful for determing the compositions in the ternary compound. (author).

Science.gov (United States)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd/sub 2/Si and NiSi/sub 2/ layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd/sub 2/Si layers was found to saturate at doses between 3 x 10/sup 14/ and 1 x 10/sup 17/ ions/cm/sup 2/, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi/sub 2/ layers became amorphous at doses higher than 3 x 10/sup 15/ ions/cm/sup 2/. These results were confirmed by the reflection electron diffraction analyses.

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The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

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The ternary zirconium palladium silicide ZrPd{sub 3}Si{sub 3} has been synthesized by arc-melting of the elemental components. It adopts a new structure type and crystallizes in the orthorhombic space group Cmcm with a = 3.8127(4){angstrom}, b = 15.551(1){angstrom}, c = 7.0390(5){angstrom}, and Z = 4 (Pearson symbol oC28). The structure can be regarded as being built up of Re{sub 3}B-type slabs of composition Pd{sub 3}Si alternating with {alpha}-FeSi{sub 2} slabs of composition ZrSi{sub 2}. Notable features include the presence of Si{sub 2} pairs, square pyramidal and tetrahedral coordination of Pd centers by Si atoms, an unusual distorted cubic coordination of the Zr atoms by the Si{sub 2} pairs, and an extensive network of Zr-Zr, Zr-Pd, and Pd-Pd metal-metal bonds. ZrPd{sub 3}Si{sub 3} is weakly metallic with a ...

Energy Technology Data Exchange (ETDEWEB)

Amorphous materials in the system xLi{sub 2}S{center_dot}(100-x)SiS{sub 2}, where x ranged from 50 to 70 mol %, and (100-y) (0.6Li{sub 2}S{center_dot}0.4SiS{sub 2}){center_dot}yLi{sub 4}SiO{sub 4}, where y ranged from 0 to 10 mol %, were synthesized by mechanical milling of crystalline starting materials, Li{sub 2}S, SiS{sub 2} and Li{sub 4}SiO{sub 4}. At the compositions with large amounts of Li{sup +} ions, a part of crystalline Li{sub 2}S used as a starting material remained in the milled powder samples. It was found that the milled powder samples in both systems obtained by mechanical milling exhibited high conductivities in the order of 10{sup -4}S{center_dot}cm{sup -1} at room temperature in spite of the presence of small amounts of Li{sub 2}S crystals. The conductivity values of the pelletized samples of xLi{sub 2}S{center_dot}(100-x)SiS{sub 2} powders ...

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Si nanocrystal floating gate MOS capacitors were formed on p-Si (100) wafers by thermal plasma jet (TPJ) annealing of SiO{sub 2}/SiO{sub x} /SiO{sub 2}/Si(100) stacked structure. The chemical composition of SiO{sub x} layer was controlled by changing the SiH{sub 4}, He, and O{sub 2} gas flow ratio during plasma enhanced chemical vapour deposition. The MOS capacitors showed clear hysteresis in capacitance-voltage (CV) characteristics after TPJ annealing. The hysteresis width shows maximum value when initial composition x =1.7, which shows the maximum photoluminescence (PL) intensity. The maximum hysteresis width of 6.8 V was observed with gate voltage swept between 20 and -20 V in x = 1.7 sample. The result means 7.4 x 10{sup 12} cm{sup -2} carriers are injected to or emitted from Si nanocrystals. The ...

International Nuclear Information System (INIS)

The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and ...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

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TiAl with between 0 and 20 volume percent (v%)Ti5Si3 was produced by reactive sintering of cold pressed compacts of elemental Ti, Al and Si powder mixtures at 700C for 15 minutes in vacuum. The results show that adding Si to Ti and Al reduces the swelling associated with reactive sintering of TiAl, as composites containing more than 5 v%Ti5Si3 densified during reactive sintering. However, composites containing more than 10v% Ti5Si3 did not retain their shape during processing, and the TiAl+20v% Ti5Si3 composite completely melted during the sintering process. The formation of pre-reaction liquid phase and the increase in adiabatic flame temperature with simultaneous compound formation resulted in the melting that occurred and the enhanced densification (minimization of swelling) during reactive sintering of the insitu composites.

Energy Technology Data Exchange (ETDEWEB)

The development of a silicon carbide (SiC) heat exchanger is a critical step in the development of the Externally-Fired Combined Cycle (EFCC) power system. SiC is the only material that provides the necessary combination of resistance to creep, thermal shock, and oxidation. While the SiC structure materials provide the thermomechanical and thermophysical properties needed for an efficient system, the mechanical properties of the SiC tubes are severely degraded through corrosion by the coal combustion products. To obtain the necessary service life of thousands of hours at temperature, a protective coating is needed that is stable with both the SiC tube and the coal combustion products, resists erosion from the particle laden gas stream, is thermal shock resistant, adheres to SiC during repeated thermal shocks (start-up, process upsets, shut-down), and allows the ...

British Library Electronic Table of Contents (United Kingdom)

A type of Si3N4-based nanocomposites ceramic cutting tool material was prepared by the addition of nano-scale Si3N4W whisker and nano-scale TiN particle. Cutting performance of the Si3N4/Si3N4W/TiN nanocomposite ceramic tool in machining of cast iron was investigated in comparison with a commercial sialon ceramic tool, and the tool wear mechanism was studied. The two types of cutting tools have similar cutting performance at relatively low cutting parameters, while Si3N4/Si3N4W/TiN nanocomposite tool exhibits a better wear resistance than sialon tool at the relatively high cutting parameters. The wear of sialon ceramic cutting tool is dominated by the plastic deformation, abrasive action, microcracking, pullout of grains and chemical action at the higher cutting parameters. The higher mech...

Energy Technology Data Exchange (ETDEWEB)

The compounds CePdSi{sub 2}, CeIrSi{sub 2} and CeRhSn{sub 2} have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi{sub 2} exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi{sub 2} shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn{sub 2} remains paramagnetic down to 5 K. The resistivity of CeIrSi{sub 2} exhibits a T{sup 2} dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi{sub 2} and CeRhSn{sub 2} shows the presence of Kondo and crystal field effects. (orig.). 5 refs.

International Nuclear Information System (INIS)

The microstructure of a pressureless sintered (1,605 C, 90 min) O' + #beta#' SiAlON ceramic with CeO_2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20--30 #mu#m long), and a continuous matrix of small rodlike #beta#' grains (< 1.0 #mu#m in length). Many #alpha#-Si_3N_4 inclusions (0.1--0.5 #mu#m in size) were found in the large O' grains. CeO_2-doping and its high doping level as well as the high Al_2O_3 concentration were thought to be the main reasons for accelerating the reaction between the #alpha#-Si_3N_4 and the Si-Al-O-N liquid to precipitate O'-SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant #alpha#-Si_3N_4 from the reacting liquid, resulting in a delay in the #alpha# #-># #beta#-Si_3N_4 transformation. The ...

International Nuclear Information System (INIS)

Several types of corrosion have damaged alloy 600 tubing in the secondary side of steam generators. The types of corrosion include wastage, denting, intergranular attack, stress corrosion, erosion-corrosion, etc. The environments which cause attack may originate from leaks of cooling water into the condensate, etc. When the contaminated feedwater is pumped into the generator, the impurities may concentrate first 200 to 400 fold in the bulk water, depending on the blowdown, and then further to saturation and dryness in heated tube support plate crevices. Characterization of local solution chemistries is the first step to predict and correct the type of corrosion that can occur. The pH is of particular importance because it is a major factor governing the rate of corrosion reactions. The pH of a solution at high temperature is not the same as the ambient temperature, since ionic dissociation constants, solubility and solubility products, activity coefficients, etc., ...

Energy Technology Data Exchange (ETDEWEB)

The ab initio pseudopotential method is used to study transient-enhanced-diffusion (TED) related processes. The electronic degrees of freedom are included explicitly, together with the fully self-consistent treatment of the electron charge density. A large supercell and a fine k-point mesh are used to ensure numerical convergence. Such method has been demonstrated to give quantitative description of defect energetic. We will show that boron diffusion is significantly enhanced in the presence of the Si interstitial due to the substantial lowering of the migrational barrier through a kick-out mechanism. The resulting mobile boron can also be trapped by another substitutional boron, forming an immobile and elect rically inactive two-boron pair. Similarly, carbon diffusion is also enhanced significantly due to the pairing with Si interstitial. However, carbon binds to Si interstitial much more strongly than boron does, taking ...

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of SiC coating on the oxidation resistance of C/C composites in combusting fields, which are expected to be applied to high temperature structural materials at over 1770K. The coating methods employed were CVD and pack cementation. The time changes in weight loss of the specimens were measured at temperatures of 1770K and 1900K under the equivalence ratio of 0.9 generated by methane-air combustion, and the surface of the specimens before and after the experiment was observed by SEM. Although the weight loss of the specimens coated by the CVD method was minimal, the coating layer was easily peeled off from the substrate. On the other hand, the layer of the specimens coated by the pack cementation method was stable and adhered to the substrate, but the substrate was degraded because of penetration of oxygen through the pores in the layer. To cover the pores, the specimens were additionally coated with glass materials comprised of ...

Energy Technology Data Exchange (ETDEWEB)

SiC has been considered as a primary candidate material for a first wall component in future fusion reactor because it has been claimed that SiC has excellent high-temperature properties, good chemical stability and low activation. However, the behavior of tritium on SiC has not been discussed yet. In this study, tritium trapping capacity on the surface of SiC was experimentally obtained at the temperature range of 25-800 deg. C in consideration of tritium trapping to the experimental system. The capacity, which was independent of the water vapor pressure in the gas phase and the temperature, was determined as about 10{sup 6} Bq/cm{sup 2}. The isotope exchange reaction rate between tritiated water in a gas phase and hydrogen on the surface was quantified at the temperature of 25, 500 and 700 deg. C in consideration of the behavior of tritium trapping at change of experimental condition by the numerical ...

International Nuclear Information System (INIS)

In this paper, we present the results of Plasma-Enhanced Chemical Vapor Deposition gate-oxide (SiO_2) integrity on ELC (excimer-laser-crystallized), MILC (metal-induced lateral-crystallized) and SPC (solid-phase-crystallized) polysilicon films. We observed that gate oxide strength of poly-Si TFT strongly depends on the crystallization method for the active silicon layer. In the case of ELC films, asperities on the silicon surface reduce the SiO_2 breakdown field significantly. The metallic contaminants in MILC films are responsible for a deleterious impact on gate oxide integrity. Among the three cases, the SiO_2 breakdown field was the highest for the SPC silicon films. The breakdown fields at the 50 % failure points in Weibull plots for the ELC, MILC and SPC cases were 5.1 MV/cm, 6.2 MV/cm, and 8.1 MV/cm, respectively. We conclude that the roughness and metallic contamination of the ...

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and ...